MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB SiliconixIRF130 = IRF134 = IRF132 IRF133 IRFS30 = IRF534 = IRF532 2 IRF533 IRF430 = IRF134 = IRF132 = IRFI33 FT IRF530 = IRF534 # IRF532 IRF533 400V N-Channel Enhancement Mode MOSPOWER These power FETs are designed especially for audio amplifiers, power converters, and drivers for motors, solenoids and relays. FEATURES No Second Breakdown High Input Impedance Very Rugged: Excellent SOA a a a Internal Drain-Source Diode B a Extremely Fast Switching BENEFITS = Reduced Component Count improved Performance a ws Simpler Designs a Improved Reliability Siliconix Product Summary: Part Number BVoss Rosion) Ip Package IRF130 toov AES 0.180 14A 60V TO-3 IRF132 100V 0.250 DA IRF133 60V , IRF530 100V 0.180 14A IRF531 60V IRF532 400V TO-220AB 0.250 12A IRF533 60V 0 G o! a s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF 130,132; IRF530,532 IRF131,133; IRF531,533 Drain-Gate Voltage IRF 130,132; IRF530,532 IRF131,133; IRF531,533 Drain Current Continuous IRF130, 131, 530, 531 {RF132, 133, 532, 533 Drain Current Pulsed (80 us to 300us, 1% duty cycle) ................. +56A Gate Current (Peak) 0.0.0.0... cece ccc e eee eee een ees +3A Gate-Source Voltage ....... ce ccc eee ee eet cen eee eee +40V Total Power Dissipation ............ 0c cece eee e eens 75W Linear Derating Factor .......... cee cece eee e eee 0.6WIC Operating and Storage Temperature ...... 0 eee eee ce nee eens -56C to + 150C PACKAGE DIMENSIONS 0.135 wax (3.429) SEATING PLANE 0.675 (17.145) 0.655 (76.637) 0.875 [om (22.225) MAX 0.450 (11.43) 0250 (6.35) 0.312 0.043 (1.092) (7.925) fl 0.038 /0.965) 1.197 130,404) 1.177 . (29.896; 0.420 10.668) i 0.225 0.205 PIN 1 Gate SSB (5.715) (8.207) TO-3 PIN 2 Source CASE Drain HN 0.188 (4.775) MAX BOTH ENDS 0.161 - (4.089) 0.151 (3.835) 0.525 max BOTTOM VIEW (73.335) 20 020 050) 270 (05S (7.39) (5.5) (6.85) 500 (32.70) 580 14.73) 0.161 (4.08) Og 39 (554) 250, \ (6.35) | 2045. (7.15) 070 (7.77) 382 (9.68) eS | 40 &6 i 1 560 650 045 (1.15) 14.23) 16.51) PIN 1 Gate TO-220AB PIN 2 & TAB Drain PIN 3 Source SiliconixTYPICAL STATIC CHARACTERISTICS (Pulse width 80ys300yus, Duty cycle 1%, To =25C) Part Numbers: VNO800A, VNO801A, VN1000A, VN1001A, VN1200A, VN1201A, VNO800D, VNO801D, VN1000D, VN1001D, VN1200D, VN1201D, IRF130, IRF131, IRF132, IRF133, IRF530, IRF531, IRF532, IRF533 Ohmie Region Ves = 20V Ip ~ DRAIN CURRENT (AMPERES) 0 1 2 3 4 5 6 Vos DRAIN SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsion) 24 T T T T T at Z YY K, NORMALIZED ON RESISTANCE 1.2 A 4 0.8 0.4 i t ! Le | 1 -60 =-20 20 60 400 6140180 T, JUNCTION TEMPERATURE (C) Transfer Characteristics Vos = 25V lp - DRAIN CURRENT (AMPERES) a 2 4 6 8 10 Veg GATE SOURCE VOLTAGE (VOLTS) LEAKAGE CURRENT (nA) Tosony~ ON RESISTANCE (OHMS) Ip DRAIN CURRENT (mA) VNDA42 Leakage Currents 104 Vos = sv /, 408 DS A Ake! 10V EL] A. 101 7 a 10 AZ lossW 10-1 ef m. 25 50 75 100 125 160 175 T CASE TEMPERATURE (C) Vs ** 20 ON Resistance Characteristics 0.20 lp =6Aly 0.18 Pry = \ 30A) 4 0.16 0.14 r SS SS 0.12 0.10 0 2 4 6 8 10 12 14 16 18 20 Ves Vas cm GATE ENHANCEMENT VOLTAGE (VOLTS) Threshold Region 100 50 20 410 5.0 To = 125C 2.0 1.0 0.5 0.2 0.1 10 15 20 25 30 35 40 Vas GATE SOURCE VOLTAGE (VOLTS) 01/83 Siliconix 4-3 CcLVWONASafe Operating Area, Active Region 50 us 20 10 5 801A 0. VN1000A, 10014 2 VN1200A, 1201 T.= 25C tp DRAIN CURRENT (AMPERES) 2 5 10 20 50 100 200 Vos DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Tc CASE TEMPERATURE (C) TYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VNO800A, VNO801A, VN1000A, VN1001A, VN1200A, VN1201A, VNO800D, VNO801D, VN1000D, VN1001D, VN1200D, VN1201D, IRF130, IRF131, IRF132, IRF133, IRF530, IRF531, IRF532, IRF533 1, DRAIN CURRENT (AMPERES) 150 1.50 S a = 125 1.25 w 2 zx w 3 o & - (9 = = 100 10 3 a A SUFFIX > & ww K > z a D ' a 5 75 Rretpp tt rec=151075;2 # = \ c/w a w NR es) = 50 +1 050 5 2 a Pp ps a <q | D SUFFIX { Ky PAY > & a 25 1 0.25 a R @JC = 1.67 C/W NAN I 0 [| | 0 ~ 0 25 50 75 100 125 150 175 Thermal Response VNDA12 SAFE OPERATING AREA Safe Operating Area, Switching 50 us Ty = 25C VNO800D, 0801D 1 VN1000D, 1001 VN1200D, 1201D 5 2 5 10 20 50 100 200 Vos DRAIN SOURCE VOLTAGE (VOLTS) Sate Operating Area, Switching 48 40 32 24 16 LINES MUST LIE 8 WITHIN THIS AREA. FOR 1, AND ty UNDER ONE 0 0 20 40 60 80 100 120 140 Vos ORAIN-SOURCE VOLTAGE (VOLTS) 4.0 M1] TF TTT 0.1 PTT AT TT TTT | TTT | ee T TTT T 0.1 j Loi itii 1 ot tid tit tot tid L a Lot tii Jot tii iil Job biliny 0,01 0.1 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 TIME (mS) 10 100 1000 4-4 Siliconix