Power and Sensing Selection Guide 2019 EN www.infineon.com/powerandsensing-selectionguide Connectivity and linking the real to the digital world is no longer a dream - it is a lived reality. Future is something we create together to make life easier, safer, and greener. Andreas Urschitz, Division President of Power Management & Multimarket Dear Customer, Today we communicate to everyone and everything. Interaction is no longer limited to human-to-human, but has been extended to human-to-machine and, with the latest innovations, even further to machineto-machine communication. As a leader in the semiconductor industry, Infineon is offering a wide product range of world-class power, sensor, and security technologies. Ultraprecise sensing solutions, such as advanced 3D ToF imagers, MEMS microphones or radar sensors, substitute human senses in IoT devices, enabling them to react to their surroundings. The next generations of GaN-based products open up a new paradigm of ultimate efficiency and reliability in power solutions that actuate sensing and computing functions at the very core of intelligent devices. Infineon's portfolio also integrates cooler, smaller and lighter audio amplifiers which enable customers to create better sounding products and enjoy exceptional audio performance of HMI-enabled speakers and other audio products. These technologies together enable energy-efficient, secure, and seamless human-to-machine and machineto-machine interaction and bridge the link between the real and the digital world. They also facilitate data storage in smart cities, industries, buildings, and homes, supporting the Internet of Intelligent Things. The 2019 edition of the Power and Sensing Selection Guide offers great solutions for your future success; together, we will make life easier, safer, and greener. : 3D ToF MEMS GaN HMI 2019 Andreas Urschitz, Division President of Power Management & Multimarket Contents Applications 4 6 Battery powered applications 6 E-mobility 8 Audio solutions 12 DC-DC enterprise power solution for data processing 16 Industrial welding 20 LED lighting 22 Major home appliances 24 Air conditioning 24 Induction cooking 25 Multicopter 26 Smart home 28 Enabling secured communication for IoT 30 Robotics 31 SMPS 34 Laptop adapter 34 Mobile charger 36 PC power supply 37 TV power supply 38 Embedded power supply 41 Server power supply 42 Telecom power supply 44 DC EV charging 46 Uninterruptible power supply 50 Solar 55 Wireless charging 60 20-300V MOSFETs 66 500-950 V MOSFETs 96 Wide bandgap semiconductors 122 Discrete IGBTs 144 Power ICs 160 Gate driver ICs 224 Motor control ICs 252 Microcontrollers 254 Sensors 272 Packages 302 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Gate driver ICs Motor control ICs From product thinking to system understanding XENSIVTM sensors Microcontrollers Infineon enables efficient generation, transmission and conversion of electrical energy Packages We make life easier, safer and greener - with technology that achieves more, consumes less and is accessible to everyone. www.infineon.com/power 5 We live in a mobile world filled with electrical devices - consumer-grade robots, light electric vehicles, multicopters and other end products driven by highly efficient electric motors. As these products evolve and improve, there is an increasing need for designers and engineers to find solutions that are more efficient, smaller, and less costly than ever before. Based on the industry-leading technology, the highest quality, and manufacturing expertise, Infineon provides a variety of innovative power semiconductors addressing a broad range of battery powered motor control applications, such as power tools, forklifts, all kinds of light electric vehicles including e-skateboards, e-scooters, pedelecs, low speed cars, and many others. Through an excellent selection of devices for power management, consumption and voltage regulation - such as power MOSFETs (e.g. CoolMOSTM, OptiMOSTM, and HEXFETTM/StrongIRFETTM), XMCTM microcontrollers, EiceDRIVERTM gate drivers and more, Infineon offers all components that are needed for the compact, cost-effective designs of today, and for the innovative designs of tomorrow. Home and professional applications Light electric vehicles eScooter, eBike, electric wheelchair, electric forklift, low speed electric vehicles (LSEV), electric motorcycle, and other battery vehicles Key enabling products for battery powered applications Consumer robotics Home and professional applications Light electric vehicles HEXFETTM/StrongIRFETTM 20-300V OptiMOSTM 25-100V MOSFETs OptiMOSTM 80-300V CoolMOSTM P7 superjunction (SJ) MOSFET* EiceDRIVERTM Gate driver ICs 200 V and 600 V gate driver ICs XMC1100 XMC1300/XMC1400 XMC1000/XMC4000 XMC4500/XMC4400 iMOTIONTM and embedded power ICs Linear voltage and DC-DC switching regulators Microcontroller and driver supply CAN transceivers IFX1050, IFX1051 Magnetic sensors Hall and xMR sensors OPTIGATM Trust B/X, OPTIGATM TPM OPTIGATM Trust B Microcontrollers Microcontrollers Motor control ICs CIPOSTM Nano IPM Authentication Gate driver ICs Consumer multicopters, vacuum robots, RC toys, service, Power tools, gardening tools, commercial multicopters, household, and other consumer robots cordless home appliance, cordless vacuum cleaners, and healthcare equipment Power ICs Discrete IGBTs Consumer robotics 500-950 V MOSFETs Highest performance in motor control WBG semiconductors Battery powered applications 20-300 V MOSFETs Applications Battery powered applications XMC4000 motor control application kit iMOTIONTM modular application design kit (MADK) 40 V Medium Can ME/MF DirectFETTM 3-phase BLDC motor drive demo board (DEMO-PTOOL-300W-M) www.infineon.com/motorcontrol * If the necessary package/RDS(on) combination is not available in the new CoolMOSTM P7 series yet, the previous CoolMOSTM CE and P6 series are the preferred series 6 Packages XMC1000 motor control application kit XENSIVTM sensors To shorten customer development time and cost, we offer a complete portfolio of low voltage motor control application kits: Applications Battery powered applications 20-300 V MOSFETs Typical battery powered three-phase system - a one-stop-shop for battery powered drives Power management OptiMOSTM HEXFETTM/StrongIRFETTM Linear voltage/DC-DC switching regulators Gate driver ICs EiceDRIVERTM 200 V driver ICs USB, serial COM & ethernet CAN transceiver User interface XMCTM microcontroller and digital controller and iMOTIONTM IRMCK099 Hall switches, linear Hall, angle, and current sensors OptiMOSTM HEXFETTM/ StrongIRFET IPM M Current sensing Current sensing WBG semiconductors Status indication LED drivers 60 V 3-phase inverter 500-950 V MOSFETs Battery management CoolMOSTM OPTIGATM Position sensing Consumer robotics Home and professional applications Light electric vehicles Supply voltage 12-48 V 10.8-56 V 24-144 V 25-200 V 20-100 V 60-300 V SuperSO8, PQFN 3x3, DirectFETTM S/M/LCan, TOLL, TO-220, TO-247, DPAK, DPAK, DPAK 7-pin 600-700 V 1EDN/2EDN/6EDL04N02PR, 6ED003L02F2, 2EDL05N06PF, 2ED2304S06F, IRS2005S/M, IRS2007S, IRS2008S, IRS2301, IRS21867, IRS2304 Integrated: IFX9201SG/ BTN8982 SuperS08, PQFN 3x3, TO-220, DPAK, DPAK, DPAK 7-pin, D2PAK 7-pin+, TOLL, DirectFETTM L-Can 600 V 1EDN/2EDN/ 2EDL/ 6EDL04N02PR, 6ED003L02-F2, 2EDL05N06PF, 2ED2304S06F, IRS2005S/M, IRS2007S, IRS2008S, IRS2301, IRS21867, IRS2304 Package SuperS08, PQFN 3x3, DirectFETTM S/M/LCan, TOLL, TO-220, DPAK, DPAK Voltage IPM - CIPOSTM Nano Authentication IC, security XMCTM microcontrollers iMotionTM ePower 600-800 V 1EDN, 2EDN, 1EDN7550, 2EDL811x, 6ED003L02-F2, 6ED003L06-F2, 6EDL04N02PR, 6EDL04N06PT, 2EDL05N06PF, IRS2005S, IRS2005M, IRS2007S, IRS2008S, IRS2011S Integrated gate driver ICs: IFX9201/2, NovalithICTM BTN8982, Trilith IC BTM7752 IRSM836-0x4MA (x=2,4,8), IRSM808-204MH OPTIGATM Trust B/X, OPTIGATM TPM XMC1100 XMC1000/XMC4000 iMOTIONTM: IRMCK099M ePower: TLE987X (BLDC), TLE986X (BDC) Microcontroller and driver supply: linear voltage and DCDC switching regulators CAN transceivers Sensors IRSM005-800MH, IRSM005-301MH OPTIGATM Trust B XMC1300 XMC4400/XMC4500 iMOTIONTM IRMCK099M ePower: TLE987X (BLDC) OPTIGATM Trust B XMC1300 XMC 4400/XMC4500 Gate driver ICs CoolMOSTM P7 SJ MOSFET* Gate driver ICs Voltage IFX1763/IFX54441/IFX54211/IFX30081/IFX90121/IFX91041 Hall switches (TLE 496X), Angle sensor (TLI5012B, TLE5501), 3D magnetic sensor (TLV493D), Current sensor (TLI4970) IFX1050, IFX1051 Hall switches (TLE496X), Angle sensor (TLI5012B), 3D magnetic sensor (TLV493D) Hall switches (TLE496X), Angle sensor (TLI5012B), 3D magnetic sensor (TLV493D) Motor control ICs OptiMOSTM and HEXFETTM/StrongIRFETTM power MOSFETs Power ICs Infineon product offering Discrete IGBTs A complete set of components that ensure system-cost competitiveness and high performance solution Extended battery lifetime and product life spans Productive capability Overall system size and cost reduction Security, quality and safety Authentication Fast time-to-market Whatever design specification, Infineon has the answer in the comprehensive portfolio of products and solutions which you can easily tailor to your needs Infineon offers solutions for power supplies, chargers, motor drives and sensors BiC MOSFETs e.g. OptiMOSTM and HEXFETTM/StrongIRFETTM extend battery lifetime and reduce chances for control failure High reliability of Infineon components results in prolonged product lifespans Offering LV FETs with SMD packaging improves the productive capability by automatic production, improves reliability and reduces assembly cost With Infineon`s components you can reduce of overall system size and cost due to components occupying smallest area and featuring compact design, both of which are required for highest power density and BOM savings thanks to lowest RDS(on) Trustworthy hardware-based security As a security market leader with a proven track record and outstanding partner network for embedded security, Infineon provides highest quality standards and a safety certified development process OPTIGATM Trust enables authentication of components connected to the system (e.g., battery pack recognition to avoid second party batteries etc.) Faster time-to-market is enabled by providing evaluation and demo boards for fast prototyping, and simulations, documentation, and system support that reduce development time and cost www.infineon.com/motorcontrol * If the necessary package/RDS(on) combination is not available in the new CoolMOSTM P7 series yet, the previous CoolMOSTM CE and P6 series are the preferred series 7 XENSIVTM sensors Customer benefits Complete solutions - broad portfolio Packages Infineon product offering Microcontrollers Why to choose Infineon as your partner for innovation in battery powered applications In cars with onboard chargers the batteries can be recharged from any standard AC power outlet, which provides maximum power of 6.6 kW best case (single-phase 230 V/32 A). This standard charging at low power takes several hours (overnight). Battery charging via the power grid requires a flexible power converter topology to handle different voltage and power ratings wherever the car may go to, and onboard chargers need to be as efficient and small as possible to stay cool at the lowest possible weight. Off-board chargers In off-board chargers, the power conversion from AC grid voltage to DC battery voltage is done outside the car and the resulting DC power is transmitted by wire to the DC-charging socket in an electric vehicle. Ultrafast chargers with power ratings at 50 kW and more have been designed in this way. As the power converter is off-board, automotive grade qualification is not required for the respective electronic components. Apart from fast and ultrafast chargers, there may be a market for off-board chargers in the power range up to 10 kW, for example to charge small and economic electric vehicles (LEVs). Also in case of the off-board chargers, selecting the right topology to enable maximum conversion efficiency is an important design criterion. AC-DC battery chargers: functional blocks AC input L1 Power (grid) L2 RFI filter PFC DC-DC converter RFI filter PFC DC-DC converter PFC stage PFC output 500-950 V MOSFETs WBG semiconductors Onboard chargers Discrete IGBTs To recharge the battery of an electric or hybrid car, a charger is needed. Chargers can be implemented onboard or off-board the vehicle. Electric energy is transferred to the vehicle by wire or by wireless methods like resonant inductive power transfer. Power units onboard the vehicle require automotive-grade components, while the wider product selection of industrial-grade components can be used for off-board units. Power ICs Best solutions for battery chargers, wireless charging and battery management Gate driver ICs E-mobility 20-300 V MOSFETs Applications E-mobility Battery management Input Protection EMI Filter DC-DC converter PFC Gate driver ICs Control + display Driver ICs Microcontroller power supply Microcontroller Transceiver PFC stage output Full-bridge converter Driver ICs Driver ICs Microcontroller www.infineon.com/emobility *For off-board chargers only 8 Isolation PWM stage - secondary rectification Driver ICs High voltage battery Microcontrollers Isolated current sensor XENSIVTM sensors 32-bit microcontroller TC23xL TC26xD XMC1000* XMC4000* Auxiliary power supply L1 L2 L3 Driver ICs I/V measurement Single-phase charger Digital isolation Packages RFI filter N Motor control ICs Driver ICs L3 Applications E-mobility Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs 1ED020I12FTA 2ED020I12FA IPx65RxxxCFDA TC23xL, TC26xD TLF35584 1) TLE7250G Automotive EiceDRIVERTM Automotive EiceDRIVERTM CoolMOSTM AURIXTM System supply Transceiver Single-channel isolated driver, two-level turn-off for 650V/1200V IGBTs Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs 650V MOSFET with integrated fast body diode 32-bit lockstep microcontroller New ISO26262 - system-supply optimized for AURIXTM High-speed automotive CAN transceiver TLE6251D Transceiver High-speed automotive CAN transceiver, with wake-up Industrial products for off-board units Typical part number Product family Description IKWxxN65F5/H5/EH5, IKZxxN65EH5/NH5 IGWxxN65F5/H5, IGZxxN65H5 IDWxxG65/120C5(B3)) IDWDxxG120C5 IMW/Z120RxxxM1 IPW65RxxxC7 IPW60RxxxP7 IPW65RxxxCFD IPW60RxxxCFD7 HYBRIDPACKTM 1 XMC1000 2), XMC4000 2) IFX1763, IFX54441, IFX54211 TRENCHSTOPTM 5 IGBTs TRENCHSTOPTM 5 IGBTs CoolSiCTM diodes CoolSiCTM diodes CoolSiCTM MOSFETs CoolMOSTM SJ MOSFETs CoolMOSTM SJ MOSFETs CoolMOSTM SJ MOSFETs CoolMOSTM SJ MOSFETs Power module XMCTM microcontrollers Linear voltage regulators IFX1050, IFX1021 TLI4970 2EDNxxxxF/R 1EDIxxN12AF Transceivers Current sensor EiceDRIVERTM 2EDN gate driver ICs EiceDRIVERTM 1EDL Compact gate driver ICs 650 V ultrafast/fast IGBT with Rapid 1 diode 650 V ultrafast/fast IGBT 650 V/1200 V SiC Schottky diode generation 5 1200 V SiC Schottky diode generation 5 TO-247 2-pin 1200 V SiC MOSFETs 650 V MOSFET, CoolMOSTM C7 series for hard switching topologies 600 V MOSFET, CoolMOSTM P7 series for hard switching topologies 650 V MOSFET, CoolMOSTM CFD2 series for soft switching topologies 600 V MOSFET, CoolMOSTM CFD7 series for soft switching topologies 1200 V/200 A for fast and ultrafast charging (>10 kW/phase) 32-bit ARM(R) Cortex(R) M0/M4F microcontrollers, up to 125C ambient temperature (XMC4000) Linear voltage regulator family with output current capability of 500 mA/300 mA/150 mA respectively High-speed CAN transceiver/LIN transceiver 600 V functional isolation, 50 A Dual-channel, low-side, non-isolated Single-channel, high-side isolated 500-950 V MOSFETs Description WBG semiconductors Product family Automotive EiceDRIVERTM Discrete IGBTs Typical part number 1ED020I12FA2 Power ICs Automotive products for onboard units Gate driver ICs Infineon's comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself perfectly to designs of compact units for onboard, off-board, and wireless charging. Our products in this sector support high switching frequencies at lowest possible on-state resistance (RDS(on)) to enable compact and efficient designs: MOSFETs such as CoolMOSTM, IGBTs such as TRENCHSTOPTM 5 and SiC Schottky diodes, such as 650V CoolSiCTM diode. In addition, integrated MOSFET and IGBT drivers, controller ICs for active CCM PFC high-performance microcontroller solutions and highly accurate current sensors complete our product portfolio. For more information about off-board chargers, refer to page 46 DC EV charging. 20-300 V MOSFETs Product portfolio for onboard and off-board charger applications Inverter - Resonance loops ~ 85 kHz Receiver ~ Resonance loops Rectifier Road side Car side High voltage switch Gate driver ICs Gate driver ICs Microcontroller Microcontroller www.infineon.com/emobility 9 High voltage switch 1) in development 2) for external chargers 3) B" in product name refers to common-cathode configuration + - + Battery management High voltage battery XENSIVTM sensors ~ PFC AC-DC + Packages M Power (grid) 50/60 Hz Microcontrollers Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts for wireless power transfer systems have been proposed, which in general seek to compensate the significant stray inductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. At the end of 2013, SAE announced a new standard for inductive charging which defined three power levels at 85 kHz. Infineon's TRENCHSTOPTM 5 IGBTs and CoolSiCTM diodes are perfectly suited for driving inductive power transfer systems on the road side which operate inside the 80 to 90 kHz band. Motor control ICs Wireless charging Applications E-mobility Product family Description 1ED020I12FA2 Automotive EiceDRIVERTM Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs 1ED020I12FTA Automotive EiceDRIVERTM Single-channel isolated driver, two-level turn-off for 650V/1200V IGBTs 2ED020I12FA Automotive EiceDRIVERTM Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs IPx65RxxxCFDA CoolMOSTM 650V MOSFET with integrated fast body diode TC23xL, TC26xD AURIXTM 32-bit lockstep microcontroller TLF35584 1) System supply New ISO26262-system-supply optimized for AURIXTM Industrial products for the road side* Typical part number Product family Description IKW40N65F5 TRENCHSTOPTM 5 IGBTs Fast IGBT with Rapid 1 diode, 40 A, TO-247 IGW40N65F5 TRENCHSTOPTM 5 IGBTs Fast IGBT, single, 40 A, TO-247 IDW40G65C5 CoolSiCTM diode 650V SiC Schottky diode generation 5, 40 A, TO-247 2) XMC4000 XMCTM microcontroller 32-bit ARM(R) Cortex(R) -M4F microcontrollers, up to 125 C ambient temperature IFX1763, IFX54441 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA or 300 mA respectively TLI4970 Current sensor 600V functional isolation, 50 A WBG semiconductors 500-950 V MOSFETs Typical part number 20-300 V MOSFETs Automotive products for the car side* L1 Power (grid) AC-DC RCD (GFCI) type B N ~ PFC w/o galvanic isolation + DC-DC buck + - - To EV`s DC charging socket High voltage switch Gate driver ICs Microcontroller Microcontrollers Concept demonstrator3) of lean and efficient off-board DC-charger without galvanic isolation Input 230V/50 Hz single-phase AC Output 220V-390VDC, max. power 3.3 kW at 350V with 96.2 percent efficiency Gate driver ICs Transformerless designs, without galvanic isolation inside the power stages, are economic and efficient. But enhanced safety measures may be required to operate such designs from standard AC-grid power outlets. Type-B RCD (GFCI) safety switches are needed on the grid side to immediately break the circuit in case an unintended feedback of DC-voltage from the HV-battery into the AC-grid occurs under worst-case failure conditions, but type-B safety switches on the grid side are not standard by today. The main reason why non-isolated designs are currently not accepted for onboard chargers is because the level of safety measures on the grid side of the charging spot is uncertain. However, inside an off-board charger installation with an integrated type-B safety switch, the use of non-isolated concepts may be indicated. To highlight their opportunities, Infineon has investigated non-isolated concepts, built and evaluated laboratory demonstrators of single-phase 3 kW chargers without galvanic isolation inside the power stages. Motor control ICs Charger concepts without galvanic isolation of the power stages Power ICs Discrete IGBTs *Available in different current ratings Product family Description ICE3PCS01G Integrated controller For active CCM PFC, DSO 14-pin IPW65R019C7 CoolMOSTM C7 SJ MOSFET 650V MOSFET, 19 m, TO-247 IDW30G65C5 CoolSiCTM diode 650V SiC Schottky diode generation 5, 30 A, TO-247 TLI4970 Current sensor 600V functional isolation, 50 A www.infineon.com/emobility 10 1) In development 2) Automotive version under consideration 3) More detailed information about this demonstrator is available upon request Packages Typical part number XENSIVTM sensors Industrial products for the road side Applications E-mobility Main switch Typical part number Product family Description IPx65RxxxCFDA CoolMOSTM CFDA 650 V SJ MOSFET with integrated fast body diode 500-950 V MOSFETs WBG semiconductors An intelligent battery management system (BMS) is necessary to sustain battery performance throughout its entire lifetime - the challenge there is to tune the utilization of each battery cell individually. Passive cell balancing is the default approach where the weakest of the cells sets the limits for battery lifetime and cruising range. Infineon's microcontrollers and sensors, in combination with our power devices, enable active cell balancing while charging and discharging. An active cell balancing system helps to increase the effective cruising range and the battery lifetime by 5 to 10 percent, compared to passive balancing. In this context, highlights are our 8-bit XC886CM microcontroller family for the slave blocks and the new 32-bit AURIXTM microcontroller family for the master block, OptiMOSTM low voltage MOSFETs, automotive CAN transceivers TLE7250G, TLE6251D, as well as step-down DC-DC controllers TLE6389-2GV and brand-new TLF35584. 20-300 V MOSFETs Best solution for battery management Battery master Description Discrete IGBTs Typical part number TC23xL, TC26xD 32-bit AURIXTM lockstep microcontrollers TLF35584 1) ISO26262-system-supply optimized for AURIXTM TLE7250G High-speed automotive CAN transceiver TLE6251D High-speed automotive CAN transceiver, with wake-up Description XC886CM 8051-compatible 8-bit automotive microcontroller TLE6389-2GV Step-down DC-DC controller TLE7250G High-speed automotive CAN transceiver IPG20N04S4L OptiMOSTM -T2 power transistor, logic level, dual, 40V/8.2 mW IPD70N03S4L OptiMOSTM -T2 power transistor, logic level, 30V/4.3 mW IPD70N10S3L OptiMOSTM -T2 power transistor, logic level, 100V/11.5 mW Private CAN 8-bit C XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G TLE6389-2GV Battery master 32-bit microcontroller TC23xL/TC26xD Motor control ICs Battery block slave Gate driver ICs Typical part number Power ICs Battery master Public CAN TLF35584 HS-CAN transceiver TLE7250G + Main switch 650 V CoolMOSTM - TLE6389-2GV 8-bit uC XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G TLE6389-2GV www.infineon.com/emobility 1) In development 11 High voltage switch Gate driver ICs XENSIVTM sensors Battery block slave 150 V-400 V Microcontroller Packages 8-bit C XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G Microcontrollers Battery block slave No heatsink Infineon's advantage Infineon offers a unique design platform with high-performance class D amplifier solutions for all power ranges and applications between 20 W and 2000 W per channel - from the smallest fully integrated single-chip solutions to highly scalable driver and discrete MOSFET combinations. IC + MOSFETs /E-GaN IRS209X (1 ch) + CoolGaNTM 400 V e-mode HEMTs* IRS2092 (1 ch) + MOSFETs w/gate buffer Analog input IRS2052 (2 ch) + MOSFETs IRS2093 (4 ch) + MOSFETs IR43x1 (1 ch) Integrated IC IR43x2 (2 ch) MA12040 (1-4 ch) Digital input MA12070 (1-4 ch) MA12040P (1-4 ch) 500-950 V MOSFETs Infineon's audio solutions enable audio designers to improve the performance of their products, while increasing efficiency and reducing solution size. Advances in semiconductor processes in combination with new innovative architectures are behind a portfolio of class D technologies that allow professional, commercial/home and portable audio applications to benefit from unparalleled performance, power density and reliability. WBG semiconductors Cooler, smaller and lighter amplifiers for great sounding audio products Discrete IGBTs Class D audio solutions 20-300 V MOSFETs Applications Audio solutions MA12070P (1-4 ch) * Coming soon Lowest idle power 1000 Output power [W/Channel] Highest power w/o heatsink Scalable in power/flexibility 2000 Best audio performance Power ICs 100 20 Filterless topology with "flying capacitor" of an integrated class D IC Motor control ICs MERUSTM integrated multilevel audio amplifier ICs for class D audio solutions With the revolutionary multilevel class D audio amplifier ICs, Infineon is leading in efficiency and power density. Monolithic multilevel class D amplifier ICs give designers full flexibility to optimize audio systems for size, performance, and cost to meet critical design objectives in today's and tomorrow's audio applications. These applications include battery operated speakers, voice controlled active speakers, television sets, stereo HiFi, soundbars, monitors, power-over-ethernet (PoE) and multichannel systems. Gate driver ICs Integrated audio solutions PVDO Microcontrollers Multilevel amplifiers www.infineon.com/audiosolutions 12 Packages Protection XENSIVTM sensors PWM modulator Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors The integrated class D audio module family of devices integrates PWM controller and digital audio power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent and simplifies class D amplifier design. Discrete IGBTs MERUSTM integrated audio amplifier multi-chip modules (MCM) Power ICs Multi-chip audio amplifier module Multi-chip audio amplifier module Analog input class D driver family PWM input class D driver family LPF PWM modulator Gate driver ICs Class D audio MOSFETs Gate driver Recommended audio MOSFETs Audio MOSFETs are specifically designed for class D audio amplifier applications. Key parameters, such as on-state resistance (RDS(on)), gate charge (QG), and reverse recovery charge (Qrr), are optimized for maximizing efficiency, THD and EMI amplifier performance. www.infineon.com/audiosolutions 13 Microcontrollers XENSIVTM sensors MERUSTM discrete audio amplifier driver ICs Infineon's family of ICs developed specifically for class D audio applications enable audio system manufacturers to more efficiently design audio product with superior audio performance and higher reliability. Packages Discrete audio solutions Motor control ICs Protection Applications Audio solutions MA12040P MA12070 MA12070P 2xBTL/2xSE/1xPBTL 2xBTL/2xSE/1xPBTL 2xBTL/2xSE/1xPBTL Max. peak power @ 4 10% THD 2x40 W 2x40 W 2x80 W 2x80 W Supply voltage 4-18 V 4-18 V 4-26 V 4-26 V Analog Digital 3-level and 5-level modulation Max. PWM frequency 726 kHz Audio input Analog Volume anddynamic range control Idle power dissipation Max output andall channels switching Audio performance (PMP2) Features Digital Hi-Res audio compliant <100 mW <110 mW >107 dB DNR 55 V output >98 dB DNR 135 V output noise 0.003% THD+N noise 0.006% THD+N <160 mW <160 mW >110 dB SNR 45 V output integrated 0.004%THD+N 101 dB SNR 140 V output noise 0.007% THD+N Comprehensive protection scheme* Configurable for SE or PBTL operation I2C communication Filterless implementation 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad EVAL_AUDIO_MA12040 EVAL_AUDIO_MA12040P EVAL_AUDIO_MA12070 EVAL_AUDIO_MA12070P Package type Evaluation boards 500-950 V MOSFETs MA12040 2xBTL/2xSE/1xPBTL Number of audio channels WBG semiconductors Specifications Discrete IGBTs MERUSTM integrated multilevel audio amplifier IC portfolio 20-300 V MOSFETs Integrated class D audio solution portfolio IR4301M IR4321M IR4311M IR4302M IR4322M 1 1 1 2 2 2 160 W 90 W 45 W 130 W 100 W 40 W ~ 31 V or 62 V ~ 25 V or 50 V ~ 15 V or 30 V ~ 31 V or 62 V ~ 25 V or 50 V ~ 16 V or 32 V 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz Differential audio input Over-current protection (80 V) (60 V) (40 V) (80 V) (60 V) (40 V) Number of audio channels Max. power per channel Supply voltage Max. PWM frequency Features Integrated power MOSFET PWM controller IR4312M Thermal shutdown Click noise reduction Clip detection Fault output 7 x 7 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN IRAUDAMP22 IRAUDAMP18 Package type 5 x 6 mm QFN IRAUDAMP12, IRAUDAMP19 5 x 6 mm QFN IRAUDAMP21 IRAUDAMP15 IRAUDAMP16, IRAUDAMP17 www.infineon.com/audiosolutions 14 Packages XENSIVTM sensors Microcontrollers Evaluation boards 5 x 6 mm QFN Gate driver ICs Specifications Motor control ICs MERUSTM integrated audio amplifier multi-chip module (MCM) portfolio Power ICs *All ICs carry a full protection scheme comprising undervoltage-lockout, overtemperature warning/error, short-circuit/overload protection, power stage pin-to-pin short-circuit, error-reporting through serial interface (I2C), DC protection. Applications Audio solutions IRS2093M 2 4 IRS2452AM 2 500 W 500 W 500 W 300 W 300 W 500 W 100 V 100 V 100 V 100 V 100 V 200 V Gate sink/source current 2.0/2.0 A 1.2/1.0 A 1.2/1.0 A 0.6/0.5 A 0.6/0.5 A 0.6/0.5 A Over-current protection Over-current flag PWM input Floating input Protection control logic PWM controller Clip detection Click noise reduction Temperature sensor input Thermal shutdown Clock input Package type 16-pin SOIC narrow 16-pin SOIC narrow 16-pin SOIC narrow Evaluation boards - IRAUDAMP4A, IRAUDAMP6 IRAUDAMP5, IRAUDAMP7S, IRAUDAMP7D, IRAUDAMP9 MLPQ48 MLPQ48 MLPQ32 IRAUDAMP10 IRAUDAMP8 EVAL_IRAUDAMP23 Recommended audio MOSFET (through-hole) portfolio Output power [W] 150 Speaker resistance Recommended driver IC 2 4 8 IRS2093S* IRFB4019 IRFB4019 IRFI4020H 200 IRS2052M* IRFB5615 IRFB4019 IRFI4020H 300 IRS2092S** IRFB4228 IRFB4227 IRFB4229 500 IRS20957S** IRFB4228 IRFB4227 IRFB4229 750 IRFB4227 IRFB4229 1000 IRFP4668 IRFB4229 x 2 Recommended audio MOSFET (DirectFETTM) portfolio Output power [W] 150 Speaker resistance Recommended driver IC 2 4 8 IRS2093S* IRF6645 IRF6665 IRF6775 IRS2052M* IRF6646 IRF6775 IRF6775 IRS2092S** IRF6644 IRF6775 IRF6785 500 IRS20957S** IRF6643 IRF6641 Microcontrollers 200 300 Recommended CoolGaNTM e-mode HEMTs portfolio CoolGaN 400 V e-mode HEMTs Package HSOF-8-3 (TO-leadless) Up to 500 W Up to 200 W 70 m 70 m IGOT40R070D1 IGT40R070D1 RDS(on) max. Part number www.infineon.com/audiosolutions www.infineon.com/gan *IRS2093S works up to150 W and IRS2052M works up to 300 W. ** IRS2092S and IRS20957S work with all power levels listed above. 15 Recommended audio driver IC PG-DSO-20-87 (top-side cooling) Pmax Discrete IGBTs Dead time 500-950 V MOSFETs IRS2052M 1 Power ICs Features IRS2092S 1 Gate driver ICs Supply voltage IRS20957S 1 Motor control ICs Max. power per channel IRS20965S IRS20957S XENSIVTM sensors Number of audio channels Packages Specifications WBG semiconductors MERUSTM discrete audio amplifier driver IC product portfolio 20-300 V MOSFETs Discrete class D audio solution portfolio An industry leader in digital power management, Infineon delivers solutions for the next generation server, communication, storage and client computing applications. Infineon offers a complete portfolio, including digital PWM controllers, integrated power stages, integrated point-of-load (POL), MOSFET drivers, power blocks and discrete MOSFETs. These proven technologies offer full flexibility to our customers to optimize a complete system solution for space, performance, ease of design and cost to meet critical design goal objectives. In addition, our latest software tools help simplify design, shorten design cycles and improve time-to-market. OptiMOSTM Discrete IGBTs AC adapters 500-950 V MOSFETs Multiphase and point-of-load DC-DC solution WBG semiconductors DC-DC enterprise power solution for data processing applications 20-300 V MOSFETs Applications DC-DC Battery charger Chip set, I/O, other peripheral loads OptiMOSTM Gate driver ICs Power ICs DC-DC PWM controller Advantage Best-in-class efficiency Digital controller and power stage provide industry`s best efficiency of more than 95 percent Intel SVID, AMD SVI2, NVIDIA PWM VID, Parallel VID (up to 8-bit) , PMBusTM Rev1.3, AVS Bus (PMBusTM Rev1.3) Complete system solution A broad portfolio of fully integrated point-of-load, integrated power stage and digital controller solutions in addition to discrete drivers and MOSFETs offers full flexibility to optimize complete system solutions requiring 1 A to 300 A+, single output/single-phase to multiple output/multi-phase Digital controller flexibility The industry's benchmark full featured 8-phase, multiple output, flexible configuration digital controllers Ease of design GUI-based optimization and configuration significantly reduces design cycle time Smallest solution size High density packaging and unique control schemes enable reduced external component count and overall board space www.infineon.com/dataprocessing 16 Packages XENSIVTM sensors Support all major VID interface and control schemes Microcontrollers Benefit Motor control ICs CPU, GPU, DDR OptiMOSTM Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Multiphase DC-DC system solution Powered ICs Server-Intel/IBM/AMD/ARM Workstation Storage Server chip set Voltage VCCIO Vcore VMCP Vmem High-end consumer Vcore PC chip set Graphics Comms Telecom Base station (macro + distributed) ASIC ASSP FPGA Networking SoCs and ASICs, FPGAs ASICs (~1.0 V) Multi-core processors ASSPs (~1.0 V) Ethernet switch ICs 10-30 A single-phase (multi-rail) >30 A multi-phase/rail www.infineon.com/dataprocessing 17 Packages XENSIVTM sensors Datacom Comms core SOHO SAN Edge access FPGAs (~0.5-3.3 V) Motor control ICs Graphic Industrial PC Microcontrollers High-end desktop Notebook Gaming Gate driver ICs Server/storage Applications DC-DC Block diagram 12 V 1.8 V + CPU/ASIC/FPGA/DSP I/O 0.9 V Core 1.5 V POL IR38XXX Power ICs PMBusTM High efficiency MOSFETs and thermally enhanced packages for operation without heat sinks Memory + Digital interface IPOL Analog interface IPOL IC PMBusTM, telemetry, margin, faults, SVID PVID Digital control/configuration, telemetry and diagnostic Part number Max. current Package size Max. Vin [A] [mm] Max. fsw Distinctive features Performace" voltage mode PWM Ultralow jitter and noise, high accuracy and low ripple Part number Max. current Package size Max. Vin [A] [mm] Max. fsw Distinctive features IR38064 35 5x7 21 V 1500 KHz PMBusTM IR3883 3 3x3 14 V 800 KHz IR38063 25 5x7 21 V 1500 KHz IR3823 3 3.5 x 3.5 21 V 1500 KHz 3 soft start IR38062 15 5x7 21 V 1500 KHz IR3897 4 4x5 21 V IR3898 6 4x5 21 V IR3899 9 4x5 21 V 1500 KHz DDR tracking and analog voltage 1500 KHz margin/AVSO 1500 KHz IR3894 12 5x6 21 V 1500 KHz IR3895 16 5x6 21 V 1500 KHz IR3826 23 5x6 17 V 1500 KHz OptiMOSTM 5, 3-level OCP IR3826A 16 5x6 17 V 1500 KHz OptiMOSTM 5, 3-level OCP IR3448 16 5x6 21 V IR3847 25 5x6 21 V 1500 KHz True differential remote sensing for 1500 KHz accuracy and ther1500 KHz mally enhanced Cu clip package IR38060 6 5x6 16 V 1500 KHz IR38163 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38165 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38363 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38365 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38263 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID + PMBusTM IR38265 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID IR3846 35 5x7 21 V IR38164 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM, enhanced Imon IR3891 4+4 5x6 21 V IR3892 6+6 5x6 21 V IRPS5401 4+4+2+2+0.5 7 x 7 14 V www.infineon.com/dataprocessing 18 Gate driver ICs DC-DC IPOL portfolio 1500 KHz 5 output PMIC, PMBusTM Constant-on-time 1500 KHz Dual output for density and 1500 KHz out-of-phase for less input capacitor Motor control ICs + Microcontrollers POL IR38XXX Operating temperature range of -40 to 125C XENSIVTM sensors I/O + Key benefits Integrated controller, driver, MOSFETs for small footprint Packages POL IR38XXX Key features Input voltage range 4.5-21 V Output current 1-35 A WBG semiconductors Infineon's point-of-load converters integrate a PWM controller, driver and MOSFETs into a small PQFN package for ease of use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies to deliver ultracompact layouts and and the smallest bill of materials. A PMBusTM interface is available for monitoring and control in systems that use advanced CPUs, ASICs and FPGAs. Discrete IGBTs Integrated point-of-load converters 500-950 V MOSFETs 20-300 V MOSFETs DC-DC enterprise power solution for data processing applications 19 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications For the best-in-class performance, where customers strive for differentiation, the 650V TRENCHSTOPTM 5 H5 series offers outstanding efficiency for optimized, low inductance designs. The new high speed, soft switching 650V TRENCHSTOPTM 5 S5 series have soft and smooth switching behavior with no tail current, while keeping very competitive switching performance. The TRENCHSTOPTM 5 S5 series can be used as plug-and-play replacement of previous generations of Infineon's IGBTs. The low VCE(sat) 650V TRENCHSTOPTM 5 L5 series is an excellent solution for secondary inverter AC output welding machines used for aluminum (Al) or magnesium (Mg) welding. Gate driver ICs For three-phase welding inverters, the 1200V HighSpeed 3 family keeps leading market position in >20 kHz designs with best performance/cost trade-off and highest reliability. For medium switching frequency designs, 1200 V TRENCHSTOPTM IGBT6 provides the best efficiency performance with a unique combination of low conduction losses of 1.85 V VCE(sat) and the lowest switching losses. Typical topologies for inverter welding machine < 280 A Motor control ICs Vin DC output for welding Microcontrollers Gate driver IC Auxiliary power supply Gate driver Control unit www.infineon.com/welding *(MMA/TIG < 280 A) 20 Secondary-side rectification XENSIVTM sensors AC input Double switch forward topology Single-phase inverters Packages PFC (optional) 500-950 V MOSFETs Price competitive 650V TRENCHSTOPTM 5 WR5 series has been specifically developed for the low power single-phase welding machine market. The TRENCHSTOPTM 5 WR5 offers low switching losses coupled with low conduction losses to provide efficiency to customers and outstanding thermal performance. WBG semiconductors Discrete IGBTs are used in small inverterized single-phase handheld welders with current output from 120 to 200 A and three-phase industrial welding machines with current output up to 280 A. Infineon offers a wide product range to address key industry trends. Discrete IGBTs High efficiency, easy design and cost competitive solutions Power ICs Industrial welding* 20-300 V MOSFETs Applications Industrial welding Applications 20-300 V MOSFETs Gate driver IC WBG semiconductors 500-950 V MOSFETs AC input Primary inverter full-bridge Secondary-side rectification VIN DC output for welding Discrete IGBTs PFC (optional) Power ICs Auxiliary power supply Gate driver Infineon's product recommendation for industrial welding Selection/benefit 650V Cost/performace TRENCHSTOPTM 5 WR5 Boost converter/switch 650V TRENCHSTOPTM 5 S5 Efficiency and ease of use Boost converter/switch 650V TRENCHSTOPTM 5 H5 Best efficiency 1200V TRENCHSTOPTM IGBT6 25 V Single low-side driver 1ED44176N01F Efficiency NEW! OCP, fault and enable function in DSO-8 Low-side gate driver 25 V Dual low-side driver IRS4427S Rugged and reliable in DSO-8 Low-side gate driver 25 V Single low-side driver IRS44273L Rugged and reliable in SOT23-5 Two transistor forward 650V TRENCHSTOPTM 5 WR5 Cost/performace Two transistor forward 650V Rapid 1 diode Efficiency Full-bridge/half-bridge 650V TRENCHSTOPTM 5 WR5 Cost/performace Full-bridge/half-bridge 650V TRENCHSTOPTM 5 S5 Efficiency and ease of use Full-bridge/half-bridge 650V TRENCHSTOPTM 5 H5 Best efficiency 1200V TRENCHSTOPTM IGBT6 Efficiency DC-AC Al/Mg welding secondary inverter 650V TRENCHSTOPTM 5 L5 Low VCE(sat) Efficiency DC-DC / DC-AC Single high-side gate driver 1200V EiceDRIVERTM galvanic isolated 1EDI05I12AF 1 A output current, separate sink/source outputs Single high-side gate driver 1200V EiceDRIVERTM galvanic isolated 1EDI60N12AF 10 A output current, separate sink/source outputs Output rectifier 650V Rapid 1 diode Efficiency Output rectifier 650V Rapid 1 diode - common cathode Efficiency Secondary side rectification DC-DC Controller Auxiliary power control Flyback control 800 V CoolSETTM F5 Recommendation Boost converter - XMC1000 Flexibility Microcontroller supply Linear voltage regulator up to 20V IFX54211 Efficiency Motor control ICs Boost converter/switch Low-side gate driver Full-bridge www.infineon.com/welding 21 Voltage class Technology/product family Boost converter/switch Microcontrollers DC-DC Topology XENSIVTM sensors Inverter AC-DC Packages Stage PFC Gate driver ICs Control unit Smart lighting enabled by radar sensors - Reliable presence detection and large area coverage up to 300 m2 - Integrated XENSIVTM 24 GHz radar transceiver eliminates the need on trimming and handling component tolerances - Ready-to-use module solutions with our radar partners (i.e. K -LD 2 from RF beam and INS-Serie from InnoSent), based on our XENSIVTM radar sensor IC (BGT24LTR11) LED drivers Combo IC PFC stage 500-950 V MOSFETs Main stage Sensors hub Dimmer 0-10 V dimming interface Hardware-based security Wired/wireless communication www.infineon.com/lighting 22 Packages XENSIVTM sensors MCU communication intellegent control Motor control ICs AC-line input LED module Microcontrollers WBG semiconductors Key trends and challenges in LED lighting and our offering: Light quality and human-centric light - No current ripple by using two stage topologies (i.e. ICL5102, XDPL8221, XDPL8218, BCR601) - Easy implementation of tunable white with a lighting dedicated peripheral - brightness and color control unit-BCCU (i.e. XMC1300) Designing smaller and flatter LED drivers - Integrating up to 25 discrete components in one 0-10 V dimming interface IC (i.e. CDM10V) - High voltage SJ MOSFETs in small and cost-effective SOT-223 package Discrete IGBTs At Infineon, we focus on supplying tailored products for LED drivers, LED strips, horticultural, and smart lighting. Our broad portfolio of tailored products and solutions for LED lighting comprises LED driver ICs, MOSFETs, and microcontrollers suited for LED drivers as well sensors and dedicated ICs for secure communication. In addition to offering products of proven quality, a competent global lighting team supports our lighting customers in designing LED lighting products and systems in collaboration with our channel partners. Power ICs Solutions for cost sensitive applications as well as for smart lighting Gate driver ICs LED lighting 20-300 V MOSFETs Applications LED lighting Applications LED lighting IC product family MOSFET technology Voltage class PFC IRS2505 CoolMOSTM P7 600/700/800/950 V 1) Main stage PFC + LCC (constant current) PFC + LLC (constant current) ICL5102 CoolMOSTM P7 (up to 600 m) 600 V/650 V 2) CoolMOSTM CE (above to 600 m) 600 V PFC + flyback (dual stage) XDPL8220 3) / XDPL8221 2) CoolMOSTM P7 800 V/950 V PFC/flyback (single-stage constant voltage) XDPL8105 CoolMOSTM P7 800 V/950 V PFC/flyback (single-stage constant voltage) XDPL8218 CoolMOSTM P7 800 V/950 V Secondary buck (single-channel) Secondary buck (multichannel) ILD6150 / ILD8150 Integrated 60 V/80 V OptiMOSTM 100 V/150 V/ 200 V/250 V/ 300 V Secondary linear BCR601 OptiMOSTM 75 V/100 V Synchronous rectification Synchronous rectification controller IR1161 / IR11688 OptiMOSTM 100 V/150 V/200 V Dimming 0-10 V dimming interface IC Buck / linear solutions XMC1300 / XMC1400 1) CDM10V - - CDM10VD - - OPTIGATM OPTIGATM Trust - - MCU XMCTM microcontroller XMC1100 - - Sensors XENSIVTM radar sensor IC BGT24LTR11 - - Discrete IGBTs Hardware based security 500-950 V MOSFETs Product type PFC stage WBG semiconductors Functional block 20-300 V MOSFETs Recommended LED driver products Power ICs LED driver with constant voltage output and linear/switch mode LED driver ICs typ.: 10 mA-500 mA Gate driver ICs Synchronous rectification typ.: >300 mA Switch mode LED driver IC LED module Linear/switch mode LED driver IC product portfolio Functional block Topology IC product family MOSFET technology Linear LED driver IC Linear BCR400 series Integrated (extra transistor for BCR450) - BCR602 External N-channel MOSFET 75 V / 100 V Switch mode LED driver IC Buck Buck/boost Voltage class ILD6000 series Integrated - XMC1300/XMC1400* OptiMOSTM 100 V/150 V/200 V/250 V/ 300 V ILD1151 OptiMOSTM 60 V/100 V www.infineon.com/lighting 23 1) 700 V, 800 V and 950 V CoolMOSTM P7 are optimized for PFC and flyback topologies. 600 V CoolMOSTM P7 is suitable for hard as well as soft switching topologies (flyback, PFC and LLC) 2) PFC and resonant combo controllers 3) PFC and flyback combo controllers Packages XENSIVTM sensors * Including communication Motor control ICs Main stage PFC stage LED string Microcontrollers AC-line input Linear LED driver IC Applications Air conditioning Innovative approach for air conditioning WBG semiconductors Product designers are facing the daunting challenge of delivering smaller, smarter, more powerful and more energy-efficient appliances. Based on industry-leading technology and manufacturing expertise, Infineon's line of innovative components for household appliances meets and exceeds even the most rigorous requirements for reliability and quality. The following block diagram example of an air conditioning system, together with the product selection table, provides effective recommendation for engineers selecting the right component for each power management stage inside major home appliances. Rectification Power management Plug DC supply 500-950 V MOSFETs 20-300 V MOSFETs Major home appliances IGBT Gate driver ICs Voltage class Technology/product family Selection/benefit PFC AC-DC IGBT - PFC CCM (high frequency - SC) 600V HighSpeed 3 Recommendation IGBT - PFC CCM (low frequency - SC) 600V TRENCHSTOPTM Performance Recommendation IGBT - PFC CCM (cost competitive - no SC) 650V TRENCHSTOPTM 5 - H5 Recommendation IGBT - PFC CCM (low losses - SC) 650 V TRENCHSTOPTM IGBT6 Recommendation IGBT - PFC 600 V TRENCHSTOPTM Advanced Isolation Recommendation IGBT - PFC (cost competitive - no SC) 650 V TRENCHSTOPTM 5 WR5 Recommendation MOSFET - PFC CCM 600V CoolMOSTM P7 Reference Diode - PFC CCM 650V Rapid 1 and Rapid 2 diodes Recommendation Controller - PFC CCM - ICE2PCS0xG, ICE3PCS0xG Recommendation IPM - PFC CCM 650 V CIPOSTM Mini PFC interleaved IPM series, CIPOSTM PFC integrated IPM series Recommendation Low-side gate driver IC-PFC 25 V Single low-side driver 1ED44176N01F OCP, fault and enable function in DSO-8 NEW! Dual low-side driver IRS4427S Rugged and reliable in DSO-8 Single low-side driver IRS44273L Rugged and reliable in SOT23-5 IGBT - B6-VSI 650V TRENCHSTOPTM IGBT6 Efficiency IGBT - B6-VSI 600V RC-Drives Fast Recommendation MOSFET - B6-VSI 500 V/600 V CoolMOSTM CE Cost/performance IPM - B6-VSI 600V CIPOSTM Mini Half-bridge gate driver IC 650 V 2ED2304S06F Half-bridge gate driver ICs 600 V 2EDL05I06PF, 2EDL23I06PJ, IRS2890DS Integrated bootstrap diode/FET Three-phase gate driver ICs 600 V 6EDL04I06PT, IR2136S, 6ED003L06-F2 OCP, fault and enable function AUX Flyback fixed frequency 700V CoolSETTM F5 Recommendation Microcontroller/motor control IC 32-bit ARM(R) Cortex(R)-M4 - XMC4100/XMC4200 Recommendation iMOTIONTM - IRMCxx motor control IC (incl. motion control algorithm) Recommendation Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211, IFX3008 Efficiency Communication CAN transceiver - IFX1050, IFX1051, IFX1040 Robustness Position sensing Angle sensor - TLE5009, TLI5012B Recommendation Hall switch - TLI496x Recommendation www.infineon.com/homeappliance Recommendation NEW! SOI with integrated bootstrap diode Power ICs Topology Gate driver ICs Functional block DC-AC 24 Rotor position detection Motor control ICs Sense and monitor Microcontrollers AF discretes MCU XENSIVTM sensors Central control unit M Packages User interface & communication Discrete IGBTs Driver stage Applications Induction cooking The TRENCHSTOPTM Feature IGBT protected series (protected IGBT) is a new device in the IGBT portfolio for induction heating application, which adds new functionality to standard discrete IGBTs. The innovative protected IGBT combines a 20 A 1350 V IGBT in RC-H5 technology with a unique protecting gate driver IC in a TO-247 6-pin package. The RC-E family is cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. This new family offers Infineon's proven quality in RC IGBTs with the best price-performance ratio and ease of use. Infineon also offers a range of complementary products, such as low-side gate drivers and high voltage level-shift gate drivers which can be used with the IGBTs, as well as in the central control and power supply subsystems of induction cooking appliances. AUX Lres Lf Cres AUX 2 Cres AUX RC-IGBT Lres V Cres 2 CK2 Cbus AC Cres 2 VAC Cbus Induction heating Topology Voltage class Technology/product family Selection/benefit DC-AC Series-resonant half-bridge Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch and protective driver Single low-side gate driver Half-bridge gate driver Single high-side gate driver 32-bit ARM(R) Cortex(R)-M0 Linear voltage regulator Fixed-frequency flyback 650V 1100V 1200V 1350 V 1600 V 1350 V 25 V 650 V 1200 V Up to 20V 700V Gate driver ICs Microcontroller Microcontroller supply AUX www.infineon.com/homeappliance RC-H5 RC-H3 RC-H5, RC-E RC-H5 RC-H2 RC-H5/protected IGBT 1ED44176N01F, IRS44273L 2ED2304S06F 1EDI40I12AF, 1EDI30I12MF XMC1302 IFX54211 CoolSETTM F5 RC-IGBT Recommendation Recommendation Recommendation Recommendation Recommendation Recommendation 1ED integrated with OPC, fault and enable functions SOI with integrated bootstrap diode Galvanic isolation, separate sink/source output Recommendation Efficiency Recommendation Motor control ICs Lf Microcontrollers Cres CK1 XENSIVTM sensors MCU 2 Lres RC-IGBT CK2 25 Cres Gate driver ICs VAC Cbus RC-IGBT Gate driver ICs VAC Cbus Gate driver ICs MCU CK1 Lres MCU Lf RC-IGBT Gate driver ICs RC-IGBT Lf MCU AUX Induction heating inverter (voltage resonance) Single switch Packages Induction heating inverter (current resonance) Half-bridge WBG semiconductors The latest RC-H5 family, previously offered with blocking voltage of 1200 V and 1350 V in a wide current range from 20 to 40 A, is now completed with the addition of a new 30 A 1600 V IGBT. Discrete IGBTs Infineon's RC discrete IGBTs were developed for resonant switching with a monolithically integrated reverse conducting diode. With this technology leadership and a broad portfolio of devices from 650 to 1600V, Infineon is the market leader and provides the industry benchmark performance in terms of switching and conduction losses. Power ICs Resonant-switching applications such as induction cooktops and inverterized microwave ovens have unique system requirements. The consumer marketplace demands them to be cost-effective, energy efficient and reliable. To achieve these goals, designers need solutions that are developed specifically for these applications. Gate driver ICs Highest performance and efficiency for induction cooking 500-950 V MOSFETs 20-300 V MOSFETs Major home appliance Multicopter solutions from Infineon Infineon's comprehensive portfolio of high quality products allows designers to rapidly design, develop, and deploy systems that address the ever more demanding needs of today's customers. We offer a near system solution - everything from XMCTM microcontrollers, to iMOTIONTM motor control ICs, to magnetic sensors and many other cutting-edge technologies - with the exception of one commodity, an IMU (inertial measurement unit) for existing solutions. In the very fast growing multicopter market, energy efficiency and reliability are becoming more important. Camera applications, autonomous flying and sophisticated onboard equipment are pushing the limits of power management and reliability. With increased adoption comes increased regulation and the multicopter itself needs to be capable of being piloted in a safe and well-controlled manner. Being a recognized leader in automotive and industrial power electronic systems, Infineon offers high quality system solutions for the next generation of multicopters and enables customers to achieve a higher degree of innovation and differentiation. 500-950 V MOSFETs WBG semiconductors Initially regarded as toys, multicopters are now serious business. From FPV drone racing to the observation of remote places or even future delivery solutions, entire businesses are emerging around the design, supply, and the use of multicopters. The major differentiator between toy drones and professional multicopters is the complexity of the control system. In professional applications, multicopters must provide a useful function on top of mere flying. Most often, this is a vision system that requires video processing, gimbal control, and other functionalities which are integrated into the control system. With great development progress in the field of data processing, navigation and control, the overall system performance is determined from reliable and efficient power management. Discrete IGBTs Reliable and cost-effective solutions to support future design trends Power ICs Multicopter 20-300 V MOSFETs Applications Multicopter Overview of the main electronic subsystems of a typical multicopter design DC-DC Gate driver Electronic speed controller Current sensing IRMCK099 / XMC1300 microcontroller I2C/SPI Authentication & remote control Application processor and wireless Interface e.g. Raspberry PI Zero Microcontrollers 24 GHz Radar sensor LTE/GPS Security 2.4/5.0 GHz Wireless XMC4000 microcontroller and digital control ICs I2C/SPI LED CAN M Yaw Motor control Gimbal XMC1400 microcontroller Position sensor www.infineon.com/multicopter 26 Inertial measurement unit (IMU) 3-axis gyroscope 3-axis accelerometer 3-axis magnetometer Roll motor control Video camera Silicon microphones Pressure Sensor ESD USB M Motor control ICs 3-phase inverter M Position sensor Pitch motor control XENSIVTM sensors Battery management M Position sensor Packages LDO Gate driver ICs Power management Authentication Broader portfolio Fast time-to-market XENSIVTM 24 GHz radar sensors have the capability of detecting the proximity of objects such as trees, buildings, etc. The miniaturized digital barometric air pressure sensors based on capacitive technology guarantee high precision during temperature changes Infineon can provide all the necessary critical semiconductor components for multicopters A complete eco-system of simulations, documentation and demoboard solutions enables a faster time-to-market WBG semiconductors Infineon offers a comprehensive portfolio to address a broad range of multicopters. Find more information at www.infineon.com/multicopter Solution tree for multicopters Flight control XMC4000 family XMC1000 family AURIXTM Sensor OPTIGATM Trust E SLS 32AIA OPTIGATM Trust P SLJ 52ACA OPTIGATM TPM SLB 96XX XENSIVTM pressure sensor: DPS310 XENSIVTM 24 GHz radar sensor: BGT24MR Current sensor: TLI4970 OPTIGATM Trust SLS 10ERE OPTIGATM Trust B SLE 95250 OPTIGATM Trust X SLS 32AIA IFX90121ELV50 IFX91041EJV33 IFX91041EJV50 Low noise amplifer(LNA) LDO DC-DC module IFX1117ME IFX54441EJV IFX1763XEJV33 Accessory authentication Security ESC Interface protection diode Joystick 3D magnetic sensor: TLV493D ESD102 series LTE: BGA7H, BGA7M, BGA7L GPS: BGA524N6, BGA824N6 Wi-Fi: BFP842ESD, BFR840L3RHESD, BFR843L3, etc. Microcontroller BCR450 BCR321U BCR421U XMC1300 family iMOTIONTM IRMCK099 ePOWER: TLE987x Hall sensor: TLI4961, TLV4961 Angle sensor: TLI5012B, TLE5009 IRSM005-800MH IRSM836-084MA Dual n-channel power MOSFETs Low voltage MOSFETs IR3742, etc. BSC0925ND, etc. OptiMOSTM 5 series StrongIRFETTM series Battery management Stand alone PWM controller Low voltage MOSFETs 600 V CoolMOSTM P7* IRS2301S 6EDL04N02P IRS23365 PX3517 Charger High voltage MOSFETs MOSFET gate driver LED driver Intelligent power module Sensor Power ICs Microcontroller 40-80 V OptiMOSTM 5 in TO-220, SuperSO8 40-75 V StrongIRFETTM 500-950 V MOSFETs Altitude stabilization Authentication ICs ICE2QS03G Discrete IGBTs Collision avoidance OPTIGATM Trust B SLE95250 Cell balancing 30 V OptiMOSTM in SSO8, S308, DirectFETTM 30 V StrongIRFETTM Low voltage MOSFETs OptiMOSTM 5 in SuperSO8, S3O8, DirectFETTM 40-80 V StrongIRFETTM Gate driver ICs Ease-of-precision control for flight and data Longer flight times Motor control ICs Authentication Offer With no or little experience in motor control, customers can implement the iMOTIONTM motor control IC and take flight Project development can be reduced up to 30 percent by using reference designs and the DAVETM platform for microcontroller programming Infineon's solutions enable authentication of components connected to the system Guaranteed safety and protection of the product, avoiding liability Through the benefits of multifunction sensors, the user can experience an easy, stable, smooth and accurate control of the multicopter Closed loop control of gimbal motor, sensors enhanced camera stability and data transmission when recording video The highly efficient components and effective flight control can make the multicopter lighter, which results in longer flight time Microcontrollers Benefits Development effort and cost reduction 20-300 V MOSFETs Applications Multicopter XMC1400 family Angle sensor TLI5012B TLE5009 LDO IFX1117ME IFX54441EJV IFX1763XEJV33 CAN transceiver HS CAN IFX1050G IFX1050GVIO Low voltage MOSFETs 25-30 V OptiMOSTM 5 25-30 V StrongIRFETTM Dual n-channel power MOSFETs IRFHM8363TRPBF, etc. MOSFET gate driver IR2101STRPBF, etc. www.infineon.com/multicopter * If the necessary package/RDS(on) combination is not available in the new CoolMOSTM P7 series yet, the previous CoolMOSTM CE and P6 series are the preferred series 27 Packages Microcontrollers XENSIVTM sensors Gimbal control Applications Smart home From intelligent lighting control to optimized energy consumption, each smart home function depends on intelligent semiconductors. As this rapidly changing field continues to evolve and mature, having a reputable and reliable partner in smart home semiconductor technologies such as Infineon makes all the difference. Smart lighting Power ICs Data privacy Smart home security Surveillance and detection Motor control ICs Smart home appliances Gate driver ICs Smart air conditioning WBG semiconductors How does a smart home differ from a regular home? A smart home is equipped with technologies that make our lives more convenient and energy efficient. Today, the growing range of technologies encompasses smart home appliances, mobile devices and home automation systems, many of which are interconnected. But being `smart' in this sense requires appliances and systems fitted with the right semiconductor solutions. They empower smart appliances, devices and systems to make sense of their environment and current situation. Working together, sensors, controllers and actuators enable members of a smart home to properly collect, interpret and process real-time data, then trigger the appropriate action or response. In an age of mounting security threats, security solutions keep all activities and system secured and out of harm's way. Discrete IGBTs Smartifying homes the secured way 500-950 V MOSFETs 20-300 V MOSFETs Smart home Lasting reliability With a proven track record, our high-quality products help keep our customers' business uncertainty at a minimum. Easy-to-integrate solutions We enable you to reduce your time-to-market thanks to easy-to-integrate products and a strong global support team for your designs. www.infineon.com/smarthome 28 XENSIVTM sensors Our in-depth system know-how coupled with our market expertice means you get application specific solutions that are best in class Packages Unparalleled system knowledge Microcontrollers Benefit from our smart home expertise Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Contextual sensitivity with market-leading accuracy and reliability. For more natural, seamless interaction between humans, machines and the surroundings. The right, easy to implement security solutions for smart, always secured homes. We meet your design's evolving security needs without compromising on convenience. Ensure optimized system performance thanks to our deep system understanding and strong processing and steering know-how. The result: an excellent user experience. www.infineon.com/smarthome 29 Power ICs Discrete IGBTs Trusted security Efficient power management Our innovative power electronics technologies allow users to save energy and run applications at a market-leading low energy level. It's the basis for real green smart homes. XENSIVTM sensors Advanced sensing Crossapplication control Packages How Infineon's offering enhances your project Microcontrollers Motor control ICs As you forge new, unexplored territory in the smart home realm, our in-depth know-how of our components and their potential in smart homes and home automation systems enable us to support you through and through. At the cutting-edge of key smart home technologies, we are in the position to guide you through this exciting new market while you explore new opportunities and business models. Especially those new to smart homes will appreciate our easy-to-use smart home demo and our basic offering of solutions. Gate driver ICs Infineon's leading portfolio of best-fit, ready-to-use semiconductor solutions empowers you to create innovative smart home applications that meet both current and future demands. You can count on our components to be smart, secured and energy efficient. In our one-stop shop, you will find all components and solutions required for your project. Furthermore, our products are easy to integrate into your designs. Collection and processing of that data targets to increase customer value in smart buildings and smart cities. Proliferation of interconnected nodes poses serious challenge in terms of ensuring that the IoT does not offer backdoors to cybercrimes. Infineon offers several products that build an "anchor of trust" in order to ensure secure data communication with the OPTIGATM Trust product family. In a connected world, the performance and security of the smart IoT systems can be continuously improved by firmware updates. As an example, a radar system that fulfills a presence detection function in office meeting rooms might be enhanced by software update to count people in meeting rooms in order to optimize the usage of assets, in this case meeting rooms. The implementation of this firmware update in a secure manner is fundamental. The update may need to be authenticated to verify its source and the authenticity of the file or may be sent encrypted to protect the know how included in the update. To do so and prevent unauthorized firmware updates, these can be sent with a cryptographic signature as encrypted files allowing the receiving system to verify and decrypt the update before installing it. With Infineon's OPTIGATM Trust product family, the keys used for the signature and encryption are stored in the hardware-based OPTIGATM security solution, and therefore cannot be easily read out or altered. 500-950 V MOSFETs WBG semiconductors Intelligent lighting systems represent one of the leading applications that enable collection of information that goes beyond pure lighting functionality. Lighting systems manufacturers are looking into implementing new functions to their customers such as: advanced presence detection including people counting sound detection pressure and environmental sensing Discrete IGBTs An increasingly connected world enables new services and features leading to new business models. For these services, high system reliability and data integrity are key necessities. The Internet of Things generates an increased amount of data due to the proliferation of sensors and actuators that have become available at an attractive cost. Power ICs OPTIGATM Trust product family Gate driver ICs Enabling secured communication for IoT 20-300 V MOSFETs Applications OPTIGATM Power supply uses OPTIGATM Trust product to verify signature with the public key Update is encrypted with secret key Update is decrypted with secret key stored in OPTIGATM Trust product Key benefits of OPTIGATM security Combining state-of-the-art hardware security controllers with software Reliable turnkey products with a proven track record Easy to integrate based on evaluation kits, host code Strong security based on the latest cryptography and reference applets Offering a variety of interfaces to match your system Developed and manufactured in certified environment architecture www.infineon.com/optiga 30 Microcontrollers Update is signed with private key (inserted in development environment) File can be installed XENSIVTM sensors Update file is transferred from the device to the digital power supply Packages Server sends update to device Motor control ICs Application flow for secure software update All this would not be possible without semiconductor solutions. Whether in an industrial robot, a cobot, an automated guided vehicle (AGV) or a service robot, intelligent semiconductors are the key enabler for all major robotic functions. Drawing on our insight into all facets of the robotics field, and with a comprehensive portfolio of power products and sensors on offer, we are able to provide reliable system solutions that address the latest trends in robotics like artificial intelligence, the Internet of Things, smart home, cloud based services, human machine interface etc., and add value to nearly every robot design. Industrial robots - achieve greater productivity and optimize costs 500-950 V MOSFETs Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on the horizon - the age of robots. Robots are joining the ranks of innovative and disruptive technologies by revolutionizing traditional habits and processes. Today's robots are able to identify and navigate their surroundings, work alongside and even interact with humans and they teach themselves the skills required to complete a new task. WBG semiconductors Superior solutions for industrial and service robotics Discrete IGBTs Robotics 20-300 V MOSFETs Applications Robotics www.infineon.com/robotics www.infineon.com/industrial-robotics 31 Gate driver ICs Motor control ICs Microcontrollers Cobots, or collaborative robots, work outside the limitation of a safety cell, in a direct interaction with real people. This setup requires a precise set of design features, especially for the sake of workplace safety. With Infineon's semiconductors for cobot systems, you benefit from the expertise of an experienced and reliable partner. Our radar and sensor solutions, for example, provide the tools to uphold even the highest safety standards and allow the robots to leave their formerly fenced working environment. XENSIVTM sensors Cobots - advance through collaboration Packages In the era of Industry 4.0 and smart factories, the latest generation of industrial robots is revolutionizing traditional manufacturing processes, thus creating the benefits for manufactures worldwide, such as increased productivity and enhanced cost optimization. Regardless of the robot's size, number of axes and payload, Infineon's wide product portfolio has the right solution for nearly any industrial robot design. Power ICs Structural system overview: industrial robot Applications Robotics 500-950 V MOSFETs WBG semiconductors Automated guided vehicles (AGVs) are a self-driving force behind automated manufacturing processes. Battery-powered systems offer the highest degree of flexibility within working environment. Covering the entire product portfolio of robotics applications - from the power supply to motor drives and sensors for navigation and environment scanning - Infineon is equipped to ensure AGVs can find their way through nearly all production environments. Discrete IGBTs Structural system overview: battery-powered AGV 20-300 V MOSFETs Automated guided vehicles - driving production and logistics forward 110/230 V~ AC grid Remote control monitoring Security controller Main controller WLAN/BT/GPS Human machine interface Motor drive Wheel motor Motor sensing Motor drive Blower/ blade motor Motor sensing Motor drive Other motors Motor sensing Smartphone/ tablet/computer WLAN/BT/GPS Power DC-supply (24 V/36 V/48 V/54 V) AUX DC-supply (12 V, 5 V, 3.3 V, ...) Central COM bus (Ethernet, CAN, I2C, SPI, ...) How our offering enhances your project At Infineon you will find ready-to-use semiconductor solutions out of one hand. Our well-thought-out products, combined with our deep know-how and proven experience, enable you to take your robotics project to the next level. By providing everything from reliable chargers and efficient power plus battery management, to compact motor control and indispensable sensors, to unrivalled hardware-based security solutions, our portfolio of leading semiconductor solutions covers everything you need to leverage the full potential of any robotic system. www.infineon.com/robotics www.infineon.com/service-robotics 32 Gate driver ICs Drives Motor control ICs AUX supplies 12 V 5 V, 3.3 V Others The latest generation of service robots is ushering in a new level of assistance and simplicity in homes and professional environments. They directly interact with humans, which introduces unique challenges from a design perspective, especially in domestic environments. Energy efficiency and long battery life as well as security aspects and sensing capabilities are key to user-friendly and safe designs. By choosing Infineon, you get a one-stop semiconductor shop for all your service robot design needs. Microcontrollers Service robot XENSIVTM sensors Charger (can be on board) Packages Structural system overview: service robot Power ICs Service robots - simplifying everyday life and work Applications Robotics SIPMOSTM OptiMOSTM Small signal MOSFETs CoolMOSTM CFD7 CoolMOSTM CFD2 TRENCHSTOPTM CoolSiCTM CIPOSTM EasyPIMTM CoolSiCTM Easy1B IRS2000x EiceDRIVERTM 1EDN/2EDN EiceDRIVERTM 1EDI/2ED/2EDF/2EDS EiceDRIVERTM 6ED, 6EDL NovalithICTM TLE986x, TLE987x XMC1000 microcontroller family XMC4000 microcontroller family AURIXTM iMOTIONTM TLx496x TLE/TLI5012B, TLE5014SP TLE5009/5109/5309/5501 TLV/TLE/TLI493D TLI 4970 TLI4971 DPS310 BGT24MTR11/12, BGT24MR2 IM69D120/IM69D130 REAL3TM IRS1125C/IRS1645C/IRS2381C IR43x1M, IR43x2M Industrial CAN transceiver ISOFACETM Linear dirver ICs BCR3xx, BCR4xx DCDC switch mode ILD4xxx, ILD6xxx AURIXTM e.g. TLE5009xxxD e.g. TLF35584 Motor control Battery authentication Motor inverter power switches Gate driver ICs Microcontroller Position & condition sensing Sensing: -Robot sensing -Environment sensing -Human machine interface Peripherals: -WLAN/BT/GPS -Human machine interface Object & condition sensing Audio Interface LED drivers Security and safety -Motion controller (incl. safety) -Security controller Controller Sensors Voltage regulators Security OPTIGATM TPM/Trust B/Trust X 500-950 V MOSFETs 60 V 25-100 V, <1kW P-/N-channel MOSFETs ranging from -60 V to 20 V 600 V, <500 W 650 V, <500 W 600/1200 V, <10 kW 1200 V, 10-20 kW Fully integrated, 600 V, 0.5-5 kW Fully integrated, 600 V, <20 kW Fully integrated, 1200 V, 10-20 kW 12-100 V 12-1200 V, non-isolated 12-1200 V, functional/safe isolation 12-1200 V, three-phase Integrated gate driver ICs Automotive embedded power ICs ARM(R) Cortex(R)-M0 microcontroller ARM(R) Cortex(R)-M4 microcontroller TriCoreTM Safety certified security on-chip Fully integrated motor control ICs XENSIVTM magnetic Hall switches XENSIVTM angle sensor, digital I/F XENSIVTM angle sensor, analog I/F XENSIVTM 3D magnetic sensor, digital I/F XENSIVTM current sensor, digital I/F XENSIVTM current sensor, analog I/F XENSIVTM pressure/temperature sensor, digital I/F XENSIVTM 24 GHz radar XENSIVTM MEMS microphone, analog I/F XENSIVTM ToF 3D imaging @ 38-100k pixel Class D audio amplifier CAN, CAN FD, CAN PD @ 1-5 MBit/s Industrial interface ICs Driving currents from 10-250 mA Support currents from 150 mA to 3A TriCoreTM Safety certified with security on-chip Safe angle sensing - dual die structure DCDC voltage regulator 12 V/ 5V or 3.3 V; watchdog, error monitoring, safe state control, BIST etc. Hardware-based, embedded security solutions, mutual authentication, secure communication, key protection, data signing etc. Voltage regulators WBG semiconductors OPTIGATM Trust B PROFETTM StrongIRFETTM Microcontroller Discrete IGBTs Hardware-based, embedded security <12 V, <400 W 20-60 V PFC power diodes Integrated power stage Gate driver ICs Power ICs OptiMOSTM StrongIRFETTM Small signal MOSFETs CoolMOSTM P7 CoolMOSTM C7 CoolMOSTM CFD7 CoolGaNTM IGBT HighSpeed 5 CoolSiCTM CoolSETTM IRS2000x EiceDRIVERTM 1EDN/2EDN EiceDRIVERTM 1EDI/2ED/2EDF/2EDS EiceDRIVERTM 6ED, 6EDL XMC1100/XMC1300 XMC4200 e.g. IFX1763, IFX90121 Gate driver ICs Component Type or Family Motor control ICs Characteristics 25-150 V 20-75 V P-/N-channel -60 to 20 V 600-800 V 600 V 600 V 600 V 600 V 650 V Schottky diode 800 V 12-100 V 12-1200 V, non-isolated 12-1200 V, functional/safe isolation 12-1200 V, three-phase ARM(R) Cortex(R)-M0 microcontroller ARM(R) Cortex(R)-M4 microcontroller LDO and DCDC switching regulators Microcontrollers Purpose Power switches (0.4-6 kW output power) XENSIVTM sensors Functional block Power: -Power supply -Power factor correction (PFC) -Charger -Battery management 20-300 V MOSFETs Infineon's key enabling products for robotics www.infineon.com/robotics 33 Packages For the complete portfolio, visit our website. Extremely versatile are the recently released CoolMOSTM P7 SJ MOSFET series series, which combine high efficiency and optimized cost with the ease of use. Infineon developed a family of packages, characterized by having a short lead, IPAK Short Lead with ISO-Standoff and wide creepage that enable our customers' cheap and reliable manufacturing, specifically for adapters. High power density at low manufacturing cost can be delivered using Infineon's SOT-223 cost-effective package which enables SMT manufacturing, while maintaining very good thermal performances. For synchronous rectification, Infineon's OptiMOSTM power MOSFET series offer extremely low on-state resistance and low capacitances. 500-950 V MOSFETs Manufacturing slimmer and lighter adapters requires ICs enabling high efficiency with good electromagnetic interference (EMI) performance and low standby power. There is also a need for cost-effective MOSFETs in small packages that feature good EMI and excellent thermal performance. Infineon offers a wide range of products specifically designed for adapters including high voltage MOSFETs and control ICs for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products, Infineon supports the trend towards a significantly higher efficiency level, especially in partial load conditions, as well as miniaturization of the adapter. WBG semiconductors Right-fit portfolio for competitive design of laptop adapters Discrete IGBTs SMPS 20-300 V MOSFETs Applications Laptop adapter 600 V/700 V/800 V CoolMOSTM P7 SJ MOSFETs Flyback (ACF, FFR, etc.) CoolGaNTM 600 V e-mode HEMTs Low voltage MOSFETs Flyback/auxiliary synchronous rectification OptiMOSTM 100-150V Control ICs QR flyback IC ICE2QS03G, ICE5QSAG FFR flyback IC IDP2105, XDPS21061 PFC Main stage High voltage MOSFETs, DCM PFC HEMTs, and diodes 600 V CoolMOSTM P7 SJ MOSFETs DCM/CCM PFC CoolGaNTM 600 V e-mode HEMTs Boost diode DCM/PFC 650 V Rapid 1 diodes Control ICs DCM PFC ICs TDA4863G, IRS2505LTRPBF High voltage MOSFETs and HEMTs HB LLC 600 V CoolMOSTM P7 SJ MOSFETs CoolGaNTM 600 V e-mode HEMTs Synchronous rectification Low voltage MOSFETs Synchronous rectification OptiMOSTM 5 100-150V Control ICs Synchronous rectification IR1161LTRPBF www.infineon.com/smps 34 Benefits Fast-switching speed for improved efficiency and thermals Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Highest efficiency Highest power density Low conduction losses and reduced overshoot Logic level can support low voltage gate drive to achieve high efficiency High efficiency and low standby power Gate driver ICs Product family Flyback High power density and digital control Fast-switching speed for improved efficiency Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Highest efficiency contribution via less parasitic parameter Space saving with SMD smaller package Low conduction losses Microcontrollers Topology High voltage MOSFETs and HEMTs Simple external circuitry High power factor and low THD Fast-switching speed for improved efficiency and thermals Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Highest efficiency Highest power density Low conduction losses, reduced overshoot Logic level switching High efficiency Simple external circuitry XENSIVTM sensors Product category Flyback converter Packages Functional block Motor control ICs Regional regulations and a general increased sensitivity toward the containment of electronic waste are pointing toward the adoption of universal adapters. The implementations, methodologies and protocols are not yet harmonized; however, Infineon is already closely monitoring and partnering with the decision makers to timely ensure the offer of a competitive semiconductor solution. The capability to efficiently manage different power classes and protocols are key in this application, and Infineon is getting ready to support adapter makers in this challenge. Power ICs New control ICs support topologies such as quasi-resonant flyback, and digital-based XDP controller can enable the forced frequency resonant flyback (zero voltage switching) operation, making it ideal to implement in high power density adapters and supporting USB-PD requirements. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Switch Travelling with multiple and often clunky chargers and adapters for phones, tablets and laptops has been a nuisance for many consumers, and often leads to frustrations due to the additional weight and required space. Over the past years manufacturers of chargers and adapters became increasingly aware of these issues and a trend towards higher power density and consequently smaller devices has emerged. Today, the typical power topology used in such systems is a flyback power conversion topology and the form factor is limited by the efficiency achievable at 90 VAC input voltage and full load. The highest power density systems available today reach ~12 W/in3 (for 65 W maximum output power). Infineon's CoolGaNTM e-mode HEMTs enable a breakthrough with respect to power density for adapter and charger systems enabling ~20 W/in3 power density systems (for 65 W maximum output power). This advantage can be realized by implementing Infineon's CoolGaNTM in a half-bridge topology that allows increasing switching frequency and efficiency simultaneously. www.infineon.com/smps 35 Motor control ICs SR and protocol control Infineon's 20 W/in3 adapter (cased) 24 W/in3 (uncased) with 65 W output power capability (LxWxH: 74.2 mm x 36.5 mm x 16.5 mm) Microcontrollers Primary side PWM control Type-C connector Gate driver ICs DC XENSIVTM sensors Rectification Power ICs Vout Main stage Packages Vin AC Applications Mobile charger To address these requirements, Infineon offers its CoolMOSTM P7 SJ MOSFET family for adapters and chargers. Special care has been taken to ensure very good thermal behavior, increased efficiency and fulfillment of all EMI requirements, enabling our customers to easily design products based on this new family. In addition, power devices in IPAK/SMD packages enable optimal PCB layout through minimal footprint. SMD packages offer additional benefits for automatized large volume production. Specifically, high power density at low manufacturing cost can be delivered using Infineon's SOT-223 cost-effective package, which enables SMT manufacturing maintaining very good thermal performances. The digital soft switching controller, CoolMOSTM high voltage MOSFETs, OptiMOSTM low voltage MOSFETs and synchronous rectification IC portfolios, enable high power density designs whilst meeting the thermal requirements. Vin Vout Switch Primary side PWM control Functional block Product category Topology Product family High voltage MOSFETs Flyback 700 V CoolMOSTM P7 (standard grade) Control ICs QR flyback ICs ICE5QSAG , ICE5QSAG FFR flyback IC XDPS21061 Low voltage MOSFETs Synchronous rectification OptiMOSTM 5 40-120 V logic level Control ICs Synchronous rectification IR1161LTRPBF Low voltage MOSFETs Load switch OptiMOSTM 30 V Load switch www.infineon.com/smps 36 SR and protocol control Flyback converter Synchronous rectification Type-C connector WBG semiconductors Motor control ICs DC Benefits Best price competitive CoolMOSTM SJ MOSFET family Lower switching losses versus standard MOSFET High efficiency and low standby power Microcontrollers Rectification High power density and ideal for USB-PD Low conduction losses and reduced overshoot Logic level switching S308/PQFN 3.3 x 3.3 package available High efficiency Simple external circuitry Low conduction losses S308/PQFN 3.3 x 3.3 package available XENSIVTM sensors Main stage Packages AC Discrete IGBTs Infineon's state-of-the-art digital-based controller XDPS21061 enables the forced frequency resonant flyback (zero voltage switching) operation, ideal to implement in high power density adapters and well-supporting USB-PD requirements. Power ICs Modern mobile devices require a charger that provides faster charging but comes in a small size. High power density and cost-effective power supplies can be designed by operating the converter at a higher switching frequency to avoid a considerable increase in the transformer and the output capacitor size. In achieving the required thermal performance and EMI behavior, power devices with lower losses and controlled switching behavior enable effective and fast product development. Gate driver ICs Best solutions for mobile charger 500-950 V MOSFETs 20-300 V MOSFETs SMPS Charger Applications PC power supply Infineon's IDP2321 is the first digital PFC + LLC combo IC worldwide to meet world-leading PC manufacturers' specifications, with integrated drivers and a 600 V depletion cell to achieve low standby power and lower cost. The PFC controlling loop is a configurable CrCM/DCM multimode to meet highest light-load efficiency. And the most important of all, IDP2321 has approximately 30 to 40 less part counts than traditional analog solutions, thanks to the state-of-the-art digital control. Furthermore, Infineon's IDP2321 offers flexible IC parameter configuration with user-friendly GUI, which means R&D engineers can key in the parameters on the PC to fine-tune and debug the system performance instead of soldering the passive components. Infineon offers the best total system solutions for non-AUX PC power together with its SMD and through-hole MOSFETs. WBG semiconductors The PC power market is divided into high-end gaming PC and better cost-performance sectors to achieve a better price performance goal for desktop SMPS. The PC OEMs are implementing the desktop SMPS by removing the AUX power block, to save the cost of having a flyback circuit. Discrete IGBTs More efficient PC power supply 500-950 V MOSFETs 20-300 V MOSFETs SMPS Rectification Functional block Product category Topology Technology PFC/Main stage High voltage MOSFETs CrCM/DCM PFC 600V CoolMOSTM P7 600V CoolMOSTM P6 500V CoolMOSTM CE Boost diodes DCM PFC 650V Rapid 1 CCM PFC 650V Rapid 2 Control ICs CCM PFC ICs ICE3PCS0xG Main stage Control ICs HB LLC ICs 650V - ICE1HS01G-1/ ICE2HS01G Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOSTM 40V Benefits Best thermal performance Rugged body diode ESD enhancement for production line Wide RDS(on) portfolio including both THD and SMD packages Fast-switching speed for improved efficiency and thermals Low gate charge for enhanced light-load efficiency and low power consumption at no load condition Optimized VGS threshold for low turn-off losses Optimized cost/performance Lower transition losses versus standard MOSFET Low conduction losses Low reverse recovery losses and PFC switch turn-on losses High PFC and low THD High efficiency and low EMI Optimized cost/performance and low thermals Layout tolerance and low thermals www.infineon.com/smps 37 Packages XENSIVTM sensors OptiMOSTM 60V DC Gate driver ICs Main stage Motor control ICs Vout Vbus PFC Microcontrollers Vin AC Power ICs PFC-PWM with AUX and ICs Functional block Product category Topology Product family Main stage/PFC combo non-AUX High voltage MOSFETs 600V CoolMOSTM P7 DCM PFC, HB LLC 500V/600V CoolMOSTM CE Benefits Control ICs PFC-LLC non-AUX digital IC for TV embedded PSU IDP2303A PFC-LLC non-AUX digital IC for TV adapter PFC Boost diodes DCM PFC 650V Rapid diode Main stage Auxiliary power supply Control ICs Control ICs Control ICs ICE3PCS0xG ICE1HS01G-1/ICE2HS01G 700V/800V - ICE5QRxx70/80A(Z)(G) Flyback Control ICs CCM PFC ICs HB LLC ICs QR/FF flyback CoolSETTM Digital ZVS flyback Flyback 700 V CoolMOSTM P7 High voltage MOSFETs www.infineon.com/smps 38 IDP2308 IDP2105 Fast-switching speed for improved efficiency Low gate charge for enhanced light load efficiency and low power consumption at no load condition Optimized VGS threshold for lower turn-off losses Rugged body diode for HB LLC application Easy control of switching behavior even in non-optimized layout Lower switching losses in comparison with its predecessor Rugged body diode which prevents device failure during hard commutation Low BOM count/system cost due to high integration Low standby power High system reliability Shorter development cycles and higher design and production flexibility Low BOM count/system cost due to high integration Low standby power Small form factor designs High system reliability Low conduction losses High PFC and low THD High efficiency and low EMI Low standby power, high efficiency and robustness Forced resonant ZVS control reduces the switching loss Multilevel protection enables the robust design Flexible firmware provides more differentiation for OEMs Optimized for flyback topologies Best price competitive CoolMOSTM SJ MOSFET family Lower switching losses versus standard MOSFET Controlled dV/dt and di/dt for better EMI 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Gate driver ICs For higher on-state resistance (RDS(on)) classes, there is a new feature of an integrated ESD diode that helps improve the quality in manufacturing. At the same time, the low RDS(on) and gate charge (QG) enable high efficiency in the various topologies. The 600 V CoolMOSTM P7 comes with a wide variety of RDS(on)s and packages on consumer grade to make it best suitable for TV power by balancing the cost and performance. Infineon developed specifically for TV power supplies a family of packages, characterized by short lead, SOT-223 mold stopper and wide creepage distance, which enable our customers' cheap and reliable manufacturing. Motor control ICs Thanks to digital power, our customers can reduce the number of TV power supplies by adapting the digital IC parameters to different TV and screen models by flexible and easy parameter setting. On top of that, Infineon recently introduced thedigital based flyback controllers, ideal to implement low power adapters for TVs and monitors. With the digital soft switching, the adapter power density can be improved significantly. The new 600 V CoolMOSTM P7 is the logical successor of the current 600 V CoolMOSTM P6. The series has been developed to cover a broad spectrum of different applications where the excellent performance and perfect ease of use are required. The rugged body diode enables not only the use in hard switching topologies, such as power factor correction, boost, and two transistor forward, but also in resonant topologies such as LLC where the technologies lead to high efficiency in both hard-switching and resonant circuits. Microcontrollers In addition to their outstanding image quality, new generation TVs gain attention for their user interface, low power consumption and for their slim design. This requires the power supply unit (PSU) to either keep a low profile to maintain the slim appearance of a TV and a low thermal dissipation image or to have an external adapter. In addition, a growing number of TV manufacturers will use external adapters to deliver DC power to the TV. Infineon introduced two products based on digital power technology, designed to meet challenging efficiency and standby power requirements for Internet of Things (IoT) enabled TVs (both embedded PSU and adapter). XENSIVTM sensors Diversify TV power supply with cost, performance and ease of use Packages SMPS 20-300 V MOSFETs Applications TV power supply Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Non-AUX digital solution for large screen size PFC LLC MOS Rectification DC output Power ICs AC input Gate driver ICs PFC + PWM (digital combi) High power solution for larger screen size PFC LLC MOS Rectification DC output LLC controller Microcontrollers AUX/standby Flyback solution for small screen size HV MOS AC input Rectification DC output XENSIVTM sensors CCM PFC controller Motor control ICs AC input www.infineon.com/smps 39 Packages PWM 20-300 V MOSFETs Applications TV power supply OLED TV power block diagram OLED LLC controller IC PFC not active in standby mode Vin VBUS Rectifier + PFC stage VCC Supply for standby mode Main LLC stage WBG semiconductors Supply for OLED display OLED LLC stage AC 500-950 V MOSFETs On/off control OLED module and TV system Supply for system Supply for system startup Main LLC/PFC combo-controller IC Status information Gate driver ICs Benefiting from several advantage of organic light emitting diodes (OLED), varying TV manufacturers are developing OLED TVs to level up the user experience of their consumers. Comparing with LCD/LED TV panels, the OLED can be thinner, lighter and more flexible, also the power consumption is lower. With the excellent performance of wide bandgap GaN power MOSFETs from Infineon, the OLED TV become even thinner and more reliable. Power ICs Discrete IGBTs Power on control CoolGaNTM portfolio DSO-20-85 Bottom-side cooling DSO-20-87 Top-side cooling HSOF-8-3 TO-leadless LSON-8-1 DFN 8x8 35 IGO60R035D1* IGOT60R035D1* IGT60R035D1* 70 IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1 IGT60R190D1* IGT60R190D1S** IGLD60R190D1* 190 IGLD60R340D1* www.infineon.com/smps * Coming soon **Standard grade 40 Packages XENSIVTM sensors Microcontrollers 340 Motor control ICs RDS(on) Infineon decided to build a scalable broad range of products, and flexible, and easy to reuse reference designs aimed at helping its customers with best fitting solutions tailored for their different needs. Depending on their specific needs, our customers can select very low-cost power supply reference designs featuring high integration or using a platform approach to reuse the same power designs for different products that need different power supplies. If high efficiency is needed, for example to meet ENERGY STAR label requirements or to improve overall thermal performance, Infineon offers highest efficiency power supply reference designs. Flyback non-AUX Power ICs In addition, Infineon offers comprehensive reference designs and application notes helping customers to drastically Vin Vout Vbus improve the efficiency of their power supply by using secondary-side synchronous rectification instead of a rectifier AC Rectification PFC Main stage DC diode. Benefits of synchronous rectification are better efficiency and better thermal performance of your power supply. Flyback Vin Vout Flyback Rectification DC Functional block Product category Topology Technology Auxiliary power supply Control ICs QR/FF flyback CoolSETTM 700 V/800 V ICE5QRxx70/80A(Z)(G) Flyback Control ICs QR flyback ICE5QSAG High voltage MOSFET Flyback 700 V/800 V CoolMOSTM P7 Benefits High efficiency and low standby power Best price competitive CoolMOSTM family Lower switching losses versus standard MOSFET Controlled dV/dt and di/dt for better EMI www.infineon.com/smps 41 Packages XENSIVTM sensors Microcontrollers Low standby power, high efficiency and robustness Motor control ICs Gate driver ICs AC 500-950 V MOSFETs Customers who design or manufacture a product that needs embedded intelligence typically want to focus on the system design of their product, be it white goods, a vending machine, an automatic door opener or any other product. They do not want to spend valuable efforts and time in designing the power supply systems. They just want to use them, having a trouble-free, EMI friendly, and reliable power supply. WBG semiconductors Full system solutions for embedded power supplies Discrete IGBTs SMPS 20-300 V MOSFETs Applications Embedded power supply Applications Server power supply In applications with a low output voltage and a high output current, further efficiency improvements have been made possible by the continuous reduction of on-resistance by Infineon's low voltage OptiMOSTM MOSFET series used in the synchronous rectification stage. Infineon's low voltage families are complemented by StrongIRFETTM which is optimized for lower switching frequencies and highest system robustness. WBG semiconductors Discrete IGBTs In the PFC stage and in general hard-switching topologies used in server applications, Infineon recommends its 600 V CoolMOSTM C7 family with the lowest FOM RDS(on) *QG and RDS(on) *Eoss. This MOSFET series provides the lowest switching losses, which are necessary in fast switching needed in high-end server SMPS. In this way, the efficiency is optimized starting from a very light-load operation. The very compact SMD packages such as ThinPAK, DDPAK and TOLL offer benefits in space and power density and are used with Infineon's new industry standard non-isolated driver family 2EDN752x. Complementary to the 600 V CoolMOSTM C7 in high efficiency PFC is the CoolSiCTM Schottky diode generation family. The 600 V CoolMOSTM P6 family offers a good compromise between price and performance. This is valuable in both PFC and HV DC-DC stages where the low QG and turn-off losses are important benefits, especially in the case of high-switching frequency operation and high light load efficiency requirements. In applications which require very high efficiency (Titanium and above) and power density, 650 V CoolMOSTM G7 and 600 V CoolGaNTM families enable the highest efficiency and power density at lower system cost for high power (2~3 kW above). Operating expenses (OPEX) and capital expenditures (CAPEX) are both reduced through simplified topologies and the power density in server PSU is doubled. Power ICs The trend in the field of enterprise and data center server is to deliver more power per rack. Meanwhile, the higher rising cost of energy and environmental concerns make SMPS efficiency optimization a key requirement across the entire load range for server and data center design. This challenging task is combined with the requirement for higher power and higher power density with cost-effective design. Gate driver ICs Highly efficient server power supply 500-950 V MOSFETs 20-300 V MOSFETs SMPS PFC-PWM with AUX and ICs Vout Vbus PFC Main stage Rectification DC Vaux DC www.infineon.com/smps 42 Packages XENSIVTM sensors Auxiliary power Microcontrollers Vin AC Motor control ICs Control and housekeeping High voltage GaN Totem pole PFC 600 V CoolGaNTM SiC diodes CCM/interleaved PFC 650 V CoolSiCTM Schottky diode generation 5 Main stage Control ICs CCM PFC ICs ICE3PCS0xG High voltage MOSFETs ITTF 600 V CoolMOSTM C7/P6 Benefits Control ICs Sychronous rectification Low voltage MOSFETs Auxiliary power supply Control ICs LLC, half-bridge below 1 kW 600 V CoolMOSTM P7, CFD7 LLC, phase shift full-bridge below 1 kW 600 V CoolMOSTM CFD7, 650 V CoolMOSTM CFD2 ZVS PS FB; LLC, TTF 650 V TRENCHSTOPTM F5 HB LLC ICs ICE1HS01G-1 ICE2HS01G HB LLC and center tap OptiMOSTM power MOSFET 40 V ITTF 60 V OptiMOSTM ZVS PS FB and center tap 80 V OptiMOSTM QR/FF flyback CoolSETTM 800 V - ICE2QRxx80(Z)(G) ICE3xRxx80J(Z)(G) 700 V ICE5QRxx70A(Z)(G) 800 V ICE5QRxx80A(Z)(G) Microcontrollers - XMC1xxx Conversion Microcontrollers - XMC4xxx PFC, PWM/resonant converter, synchronous rectification Gate driver ICs - 1EDix EiceDRIVERTM - 2EDNx EiceDRIVERTM Enable the highest efficiency and highest power density Low FOM VF*QG Ease of use Fast switching speed for improved efficiency and thermals Low gate charge for enhanced light load efficiency and low power consumption at no load condition Optimized VGS threshold for lower turn-off losses Rugged body diode which prevents device failure during hard commutation Low turn-off losses Low Qoss Low QG Fast and rugged body diode Optimized low QG and soft commutation behavior to reach highest effciency Highest reliability for 650 V VDS Improved ruggedness and high efficiency in low inductance designs High efficiency and low EMI High efficiency over whole load range, layout tolerance High efficiency, low thermals, low VDS overshoot High efficiency over whole load range, low VDS overshoot and oscillations Low standby power, high efficiency and robustness An integrated 700 V/800 V superjunction power MOSFET with avalanche capability Burst mode entry/exit to optimize standby power at different low load conditions Flexibility, HR PWM, digital communication ARM(R) based standard MCU family and wide family Flexibility, HR PWM and digital communication 100 ns typical propagation delay time Functional isolation Separate source 8 V UVLO option -10 V input robustness Output robust against reverse current www.infineon.com/smps 43 Packages XENSIVTM sensors Microcontrollers Motor control ICs Housekeeping Best FOM RDS(on)*QG and RDS(on)*Eoss Lowest RDS(on) per package Low dependency of switching losses form Rg,ext 500-950 V MOSFETs 600 V/650 V CoolMOSTM C7 650 V CoolMOSTM G7 WBG semiconductors Product family CCM/interleaved PFC; TTF Discrete IGBTs Topology High voltage MOSFETs Power ICs Product category PFC Gate driver ICs Functional block 20-300 V MOSFETs Applications Server power supply Applications Telecom power supply Equally impressive improvements in reverse-recovery characteristics have been achieved for high voltage CoolSiCTM (silicon carbide) diodes. Infineon's high voltage (HV) offerings are complemented by the newly introduced HV GaN switches - the CoolGaNTM family, which enables highest electrical conversion efficiency at attractive system costs. In order to meet the new challenging efficiency targets, the synchronous rectification utilizing the unique performance of OptiMOSTM low voltage MOSFETs has become increasingly popular even in the typically high output voltage of telecom rectifiers. Analog and digital control AnalogICs and digital control ICs Main stage Rectification Synchronous rectification Or-ing, hot swap Vout Or-ing AUX V DCout Hot swap Non-isolated POL niPOL, buck Primary side PWM Synchronous rectification Product category Topology Product family PFC High voltage MOSFETs 600V/650V CoolMOSTM C7 CCM/interleaved PFC; TTF 600V CoolMOSTM P7 High voltage GaN CCM totem pole CoolGaNTM 600 V SiC diodes CCM/interleaved PFC 650 V CoolSiCTM Schottky diode generation 6 Control ICs CCM PFC ICs 800V - ICE3PCS0xG GaN driver ICs Totem pole PFC EiceDRIVERTM 1EDF5673F and 1EDF5673K www.infineon.com/smps 44 Load Or-ing Load Battery protection Functional block Gate driver ICs DC Isolated DC-DC Power distribution DC Vaux AUX DC Power ICs DC-DC main stage Motor control ICs PFC VBULK PFC Benefits Best FOM RDS(on)*QG and RDS(on)*Eoss Lowest RDS(on) per package Low dependency of switching losses form Rg,ext Low turn-off losses Low Qoss Low QG Microcontrollers AC Vbulk Switching at high frequencies (> Si) Enables high power density Low FOM VF*QC High PFC and low THD Low driving impedance (on-resistance 0.85 source, 0.35 sink) Input-output propagation delay accuracy: 5 ns Functional and reinforced isolation available XENSIVTM sensors AC AC-DC rectifier AC-DC rectifier Packages Vin Vin WBG semiconductors The telecommunication industry providing data, voice, and video services is continuously growing supported by the expansion into new markets and accelerated by the spread of wireless and broadband technologies. The outstanding improvements in telecom SMPS performance made in the past 10 years have been primarily brought about by the dramatic reduction of the on-resistance achieved in high voltage MOSFETs, using the revolutionary superjunction principle. This principle was introduced by Infineon at the end of the nineties with the CoolMOSTM series. Discrete IGBTs Full system solution for telecom power supply 500-950 V MOSFETs 20-300 V MOSFETs SMPS HB LLC ICs ICE1HS01G-1, ICE2HS01G GaN driver ICs LLC, ZVS phase shift full-bridge EiceDRIVERTM 1EDS5663H GaN e-mode HEMTs LLC, ZVS phase shift full-bridge CoolGaNTM 600 V Synchronous rectification Low voltage MOSFETs Synchronous rectification MOSFET OptiMOSTM 80-150V Auxiliary power supply Control ICs 5th generation QR/FF flyback CoolSETTM QR 800 V - ICE5QRxx80Ax FF 800 V - ICE5xRxx80AG Housekeeping Microcontrollers - XMC1xxx Conversion Microcontrollers - XMC4xxx PFC, PWM/ resonant converter, synchronous rectification Gate driver ICs Single-channel non-isolated EiceDRIVERTM 1EDN751x Single-channel non-isolated EiceDRIVERTM 1EDN7550 Dual-channel non-isolated EiceDRIVERTM 2EDN7x Dual-channel junction isolated EiceDRIVERTM 2EDL811x* Single-channel isolated EiceDRIVERTM 1EDi Compact Dual-channel isolated EiceDRIVERTM 2EDFx Dual-channel isolated EiceDRIVERTM 2EDSx Or-ing Low voltage MOSFETs Or-ing MOSFET OptiMOSTM 60-200 V Battery protection Low voltage MOSFETs MOSFET OptiMOSTM 60-150V Isolated DC-DC Low voltage MOSFETs Primary side PWM MOSFET OptiMOSTM 60-200V StrongIRFETTM 60-200V Small signal MOSFETs 60-200 V Synchronous rectification MOSFET OptiMOSTM 40-100V StrongIRFETTM 40-100V Or-ing MOSFET OptiMOSTM 25-30V High efficiency and low EMI Low driving impedance (on-resistance 0.85 source, 0.35 sink) Input-output propagation delay accuracy: +/- 5 ns Functional and reinforced isolation available 500-950 V MOSFETs Control ICs Best-in-class Qrr and trr level Significantly reduced QG Improved efficiency over previous CoolMOSTM fast body diode series Enable the highest efficiency and highest power density Industry's lowest FOM (RDS(on)*QG) leading to high efficiency at good price/performance Low voltage overshoots enabling easy design-in Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit Quasi-resonant switching operation for high efficiency and low EMI signature Fixed frequency switching operation for ease of design - 100 KHz and 125 KHz Fast and robust start-up with cascode configuration Robust protection with adjustable line input over-voltage protection, VCC and CS pin short-to-ground protection Optimized light-load efficiency with selectable burst mode entry/exit profile Frequency reduction for mid- and light-load condition to reduce switching losses and increase efficiency Direct feedback and regulation with integrated error amplifier for non-isolated output High power delivery of up to 42 W with 800 V CoolSETTM in heatsink-free SMD package Flexibility, HR PWM, digital communication ARM(R) based standard MCU family and wide family Flexibility, HR PWM, digital communication ARM(R) based standard MCU family and wide family WBG semiconductors 600V CoolMOSTM CFD7 Low turn-off losses Low Qoss Low QG Discrete IGBTs CCM/interleaved PFC; TTF HB LLC Power ICs 600V CoolMOSTM P7 8 V UVLO option (-)10 V input robustness Output robust against reverse current 8 V UVLO option (-)10 V input robustness True differential inputs for >100 VAC ground shift robustness 8 V UVLO option (-)10 V input robustness Output robust against reverse current Gate driver ICs LLC Benefits Fast-switching speed for improved efficiency and thermals Low gate charge for enhanced light load efficiency and low power consumption at no load condition Optimized VGS threshold for lower turn-off losses Rugged body diode which prevents device failure during hard commutation 20 ns typical propagation delay time 20 V bootstrap capability on high side (-)7 V input robustness 100 ns typical propagation delay time Functional isolation 1.2 kV separate source and sync outputs 35 ns typical propagation delay time Functional isolation 1.5 kVCMTI > 150 V/ns Motor control ICs Product family 600V CoolMOSTM C7/P7 35 ns typical propagation delay time Reinforced (safe) isolation 6 kV CMTI > 150 V/ns Industry's lowest FOM (RDS(on)*QG) leading to high efficiency at good price/performance Low voltage overshoots enabling easy design-in Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit Microcontrollers Product category Topology High voltage CCM/interleaved PFC; MOSFETs TTF HB LLC XENSIVTM sensors Functional block DC-DC main stage 20-300 V MOSFETs Applications Telecom power supply www.infineon.com/smps *Upcoming - Q2/2019 45 Packages StrongIRFETTM 25-30V What speaks for off-board DC EV charging? With the growing number of electric vehicles (EVs), which are in some markets becoming viable alternatives to traditional internal combustion engine vehicles, the demand for enhanced semiconductor solutions for charging stations increases too. Currently, all eyes are on China where EVs have gained traction in the rapidly expanding middle class, while Europe and the United States are expected to follow suit soon. However, to truly welcome EVs on a large scale, these markets need to provide widespread availability of DC charging infrastructure so that drivers can quickly charge their vehicles. DC charging systems are an attractive choice because they offer much faster charging than a standard AC EV charger which many EV drivers possess. Today a DC charger with e.g. 150 kW can put a 200 km charge on an EV battery in just 15 minutes. The improvement of charging technologies is expected to even further lower the charging time. Consequently, off-board charging is becoming more and more attractive. Discrete IGBTs Challenges on the horizon Reaching the next level in designing DC EV chargers confronts engineers with many new challenges. For a DC charging design to be a long term success, you must: System diagram DC EV charger DC-DC stage Microcontrollers Power DC power to batteries Communication and security Gate driver and galvanic isolation XENSIVTM sensors Microcontroller AURIXTM / XMCTM Internal power supply Communication to user www.infineon.com/ev-charging 46 Communication to car - end user Human-machine interface (HMI) Authentication and encryption Packages Control AC-DC including PFC Motor control ICs The right partner for successful DC EV charger designs As a market leader and the global frontrunner in power electronics, Infineon enables you to bring energy-efficient DC EV charger designs to life, with our highly efficient components and in-depth technical support. We cover power ranges from kilowatt to megawatt in our broad portfolio of high-quality power semiconductors, microcontrollers, gate drivers and security, safety, and authentication solutions. Our CoolMOSTM and CoolSiCTM MOSFETs, for example, are ideal in a wide range of DC EV charging designs. Their matchless advantages include high frequency operation, high power density and reduced switching losses, allowing you to reach high levels of efficiency in any battery charging system. Gate driver ICs Power ICs Enhance output power to shorten the charging time Improve power density within the set dimensions of the charging station Increase efficiency by boosting the load and decreasing power dissipation Reduce design cost per watt Overcoming all of the mentioned issues is possible - with the right partner. AC power in 500-950 V MOSFETs Advanced solutions for DC EV charging WBG semiconductors Fast EV Charging 20-300 V MOSFETs Applications Off-board DC EV charging PFC stage (three-phase input) Product category Product family Product Additional information High voltage MOSFET / SiC MOSFET / IGBT 650 V CoolMOSTM C7 600 V CoolMOSTM C7 600 V CoolMOSTM P7 IPW65R019C7 IPW60R017C7 IPW60R024P7 IPW60R037P7 IPW60R060P7 IKW50N65EH5/IKZ50N65EH5 IKW75N65EH5/IKZ75N65EH5 IMW120R045M1/IMZ120R045M1 F3L15MR12W2M1_B69 FS45MR12W1M1_B11 IDW15G120C5B/IDWD15G120C5 IDW20G120C5B/IDWD20G120C5 IDW30G120C5B/IDWD30G120C5 650 V, 19 m, TO-247 600 V, 17 m, TO-247 600 V, 24 m, TO-247 600 V, 37 m, TO-247 600 V, 60 m, TO-247 650 V, 50 A, TO-247-3/4 650 V, 75 A, TO-247-3/4 1200 V, 45 m, TO-247-3/4 1200 V, 15 m, Easy 2B, Vienna rectifier phase leg 1200 V, 45 m, Easy 1B, sixpack 1200 V, 15 A, TO-247-3/2 1200 V, 20 A, TO-247-3/2 1200 V, 30 A, TO-247-3/2 650 V TRENCHSTOPTM 5 H5 1200 V CoolSiCTM MOSFETs 1200 V CoolSiCTM Easy modules SiC diodes 1200 V CoolSiCTM Schottky diodes generation 5 500-950 V MOSFETs WBG semiconductors Infineon's solution recommendation for DC EV charging system blocks Our solutions are designed for harsh environmental conditions and long life time as we have an excellent understanding of quality requirements. Take the next step by exploring our product portfolio for DC EV charging systems. Discrete IGBTs Through extensive interaction with DC EV charging designers and being a member of CharIN, we have vast system expertise in electric mobility as well as its automotive safety and data security. All this contributes to making vehicle chargers safe, efficient, and fast. Based on that knowledge, Infineon provides a comprehensive offering addressing application needs of DC EV charging: Power semiconductor and gate driver solutions for highly efficient power conversion Authentication solutions for secure authentication and protection against misuse Encryption solutions ensuring secure communication for billing and roaming 20-300 V MOSFETs Applications Off-board DC EV charging SiC Diodes Output rectification diodes 1200 V CoolSiCTM Schottky diode generation 5 650 V CoolSiCTM Schottky diode generation 5 650 V CoolSiCTM Schottky diode generation 6 www.infineon.com/ev-charging 47 Gate driver ICs 600 V CoolMOSTM C7 600 V CoolMOSTM P7 1200 V CoolSiCTM SiC MOSFET 1200 V CoolSiCTM Easy module Motor control ICs Additional information 600 V, 18 m, TO-247 600 V, 24 m, TO-247 600 V, 37 m, TO-247 600 V, 40 m, TO-247 600 V, 55 m, TO-247 600 V, 70 m, TO-247 650 V, 45 m, TO-247 600 V, 80 m, TO-247 1200 V, 45 m, TO-247-3/4 1200 V, 6 m, Easy 2B, half-bridge 1200 V, 8 m, Easy 2B, half-bridge 1200 V, 11 m, Easy 1B, half-bridge 1200 V, 23 m, Easy 1B, half-bridge 1200 V, 23 m, Easy 1B, fourpack 1200 V, 45 m, Easy 1B, sixpack 1200 V, 15 A, TO-247-3/2 1200 V, 20 A, TO-247-3/2 1200 V, 30 A, TO-247-3/2 650 V, 12 A, TO-247 650 V, 16 A, TO-247 650 V, 20 A, TO-247 650 V, 10 A, TO-247 650 V, 24 A, TO-247 650 V, 30 A, TO-247 650 V, 32 A, TO-247 650 V, 40 A, TO-247 650 V, 40 A, TO-247 650 V, 20 A, TO-220 650 V, 16 A, TO-220 real 2-pin 650 V, 12 A, TO-220 real 2-pin 650 V, 10 A, TO-220 real 2-pin 650 V, 8 A, TO-220 real 2-pin 650 V, 6 A, TO-220 real 2-pin 650 V, 4 A, TO-220 real 2-pin 650 V, 20 A, Double DPAK 650 V, 16 A, Double DPAK 650 V, 12 A, Double DPAK 650 V, 10 A, Double DPAK 650 V, 8 A, Double DPAK 650 V, 6 A, Double DPAK 650 V, 4 A, Double DPAK Microcontrollers Product IPW60R018CFD7 IPW60R024CFD7 IPW60R037CSFD IPW60R040CFD7 IPW60R055CFD7 IPW60R070CFD7 IPW65R045C7 IPW60R080P7 IMW120R045M1/IMZ120R045M1 FF6MR12W2M1_B11 FF8MR12W2M1_B11 FF11MR12W1M1_B11 FF23MR12W1M1_B11 F4-23MR12W1M1_B11 FS45MR12W1M1_B11 IDW15G120C5B/IDWD15G120C5 IDW20G120C5B/IDWD20G120C5 IDW30G120C5B/IDWD30G120C5 IDW12G65C5 IDW16G65C5 IDW20G65C5 IDW20G65C5B IDW24G65C5B IDW30G65C5 IDW32G65C5B IDW40G65C5 IDW40G65C5B IDH20G65C6 IDH16G65C6 IDH12G65C6 IDH10G65C6 IDH08G65C6 IDH06G65C6 IDH04G65C6 IDDD20G65C6 IDDD16G65C6 IDDD12G65C6 IDDD10G65C6 IDDD08G65C6 IDDD06G65C6 IDDD04G65C6 XENSIVTM sensors Product family 600 V CoolMOSTM CFD7 / CSFD Packages Product category High voltage MOSFET / SiC MOSFET Power ICs HV DC-DC main stage Product Additional information 1EDN family, 2EDN family Single-channel/dual-channel, non-isolated low-side gate driver ICs EiceDRIVERTM 500-700 V level shift gate driver IR2214SS 1200 V half-bridge gate driver for IGBTs and MOSFETs with level-shift technology EiceDRIVERTM (galvanic isolation) 2EDF7175F, 2EDF7275F Dual-channel functional isolated (1,5 kV) 2EDS8265H, 2EDS8165H Dual-channel reinforced (safe) isolated (6 kV) 1EDI40I12AF/H, 1EDI60I12AF/H, 1EDC40I12AH, 1EDC60I12AH 600 V / 650 V single-channel, galvanic isolated driver with separate source and sink outputs to drive CoolMOSTM SJ MOSFETs in floating mode as in Vienna rectifier variants 1EDC20H12AH, 1EDC60H12AH, 1ED020I12-F2, 2ED020I12-F2 1200 V, single-channel/dual-channel, galvanic isolated driver recommended to drive CoolSiCTM MOSFETs and CoolSiCTM EasyPackTM power modules 1EDI30I12MF/H, 1EDC30I12H, 1EDI10I12MF/H, 1EDC10I12MH 1200 V, single-channel, galvanic isolated driver with integrated Miller clamp to drive TRENCHSTOPTM 5 H5 IGBTs Microcontroller Product category Product family Product Additional information Microcontroller XMCTM XMC1400 family (PFC stage) ARM(R) Cortex(R) M0 based microcontroller XMC4500/4700 (HV DC-DC/PWM stage) ARM(R) Cortex(R) M4F based microcontroller TC26X/TC27X TC36X/TC37X TriCoreTM AURIXTM 32-bit microcontroller HSM (hardware secure module) full EVITA compliance AURIXTM 500-950 V MOSFETs Product family EiceDRIVERTM (non-isolated) WBG semiconductors Product category Gate driver ICs Discrete IGBTs Gate driver and galvanic isolation 20-300 V MOSFETs Applications Off-board DC EV charging Product family Product Additional information CoolSETTM 5 QR/FF flyback ICE5QR0680AG 800 V, 42 W, 710 m, PG-DSO-12 ICE5AR0680AG 800 V, 42 W, 710 m, PG-DSO-12 5th generation PWM controllers and CoolMOSTM P7 ICE5QSAG and IPP80R360P7 800 V, 360 m, TO-220 ICE5QSAG and IPA95R450P7 950 V, 450 m , TO-220 FP CoolMOSTM HV SJ MOSFETs IPN95R1K2P7 950 V, 450 m, SOT-223 IPN80R1K4P7 800 V, 1.4 , SOT-223 Gate driver ICs Product category AC-DC power conversion Power ICs Internal power supply Product family Product Additional information OPTIGATM Trust B SLE952500000XTSA1 Assymetric ECC authentication with individual certificate key pair and an extended temperature range of -40 to 110C OPTIGATM Trust TPM SLB9670XQ2.0 Fully TCG TPM 2.0 standard compliant module with the SPI interface SLC37 SLC37ESA2M0, SLI97CSIFX1M00PE New class of performance and security cryptocontroller adhering to CC EAL6+ high targeted and EMVCo targeted certifications for payment and eSIM applications www.infineon.com/ev-charging 48 Packages XENSIVTM sensors Microcontrollers Product category Security Motor control ICs Authentication and encryption As embedded systems are increasingly becoming targets of attackers, Infineon offers OPTIGATM - a turnkey security solution. 49 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Today's uninterruptible power supply systems introduce a wide range of challenges. Overcoming them requires an increase in output power, power density and energy efficiency. For all your UPS power supply applications, Infineon's high quality products provide you with complete system level solutions. Equipped with our semiconductors, UPS applications can achieve best-possible power conversion efficiency and cutting-edge power density. The benefits are cost reduction and fewer passive components - regardless of the topology used. Discrete IGBTs By choosing Infineon's products for UPS applications you get solutions that fulfill the latest market requirements. This includes the trend of modularization of UPS brick units due to scalable power demand from data centers, as well as the topology shift from two-level to three-level to achieve higher efficiency. Our products are suitable for any kind of uninterruptible power supplies in telecom, data center, server or industrial automation environments. 500-950 V MOSFETs Attractive solutions for highest efficiency and power density WBG semiconductors Uninterruptible power supply (UPS) 20-300 V MOSFETs Applications UPS OptiMOSTM and StrongIRFETTM 20-300 V CoolSiCTM Schottky diode SiC diodes TRENCHSTOPTM IGBT6 TRENCHSTOPTM 5 H5 IGBTs Power module and stack EasyPACKTM EiceDRIVERTM 1EDN EiceDRIVERTM 2EDN CoolSETTM 650-800 V Auxiliary power supply XMC1300 series www.infineon.com/ups 50 Packages XENSIVTM sensors Microcontrollers EiceDRIVERTM 1ED Compact Motor control ICs Driver ICs Gate driver ICs CoolMOSTM SJ MOSFETs 500-950 V Microcontrollers MOSFETs Online UPS Power ICs Offline UPS Applications UPS 20-300 V MOSFETs Offline UPS Bidirectional UPS power stage Load Grid Full-bridge bidirectional power stage WBG semiconductors Bidirectional charger / inverter Push-pull bidirectional power stage Battery + Battery + XMC1300 XMC1300 StrongIRFETTM ADC LS gate driver Tap select HB driver HB driver ADC PWM generation Display drive Display drive Grid StrongIRFETTM PWM generation LS gate driver LF transformer Discrete IGBTs Battery 12 V / 24 V 500-950 V MOSFETs Sensing Battery LF transformer Gate drivers 12 V Push-pull 60 V IRFB7530 IRFB7534 IRFB7540 IRFB7545 IRFP3006 IRFP7530 IRFP7537 IRFS7530 IRFS7530-7P IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 30 V 40 V IRLB3813 IRLB8314 IRLB8743 IRFB7430 (40 V) IRFP7430 IRFS7430 (40 V) IRFS7430-7P (40 V) IRS211X IRS2186 2EDL811X Push-pull 75 V 100 V IRFB3077 IRFB3207 IRFB7730 IRFB7734 IRFP7718 IRFS7730 IRFS7734 IRF3610S (100 V) IRFS4010 (100 V) IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 40 V 60 V IRFB7430 IRFB7434 IRFB7545 (60 V) IRF60B217 (60 V) IRFP7530 IRFP3006 IRFP7537 IRFS7430 IRFS7430-7P IRF7430 IRFS7530-7P IRS211X IRS2186 2EDL811X Push-pull 150 V IRFB4115 IRFB4321 IPP046N15N5 IRFB4228 IRFB4019 IRFP4568 IRFP4321 IRF150P220 IRF150P221 IRFS4321 IRFS4115 RB048N15N5 IRFS4615 IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 100 V IPP030N10N IRFB4110 IPP086N10N3G IRFB4510 IPP180N10N3G IRFP4468 IRFP4110 IRF100P218 IRF100P219 IRFS3610 IRF3710S IRF8010S IRFS4510 IRFS4010 IRS211X IRS2186 2EDL811X Push-pull 200 V IPP110N20N3 IRFB4127 IRFB4227 IPP320N20N3 IRFB4320 IRF200P222 IRFP4668 IRF200P223 IRFP4127 IRFP4227 IPB110N20N3LF IRFS4127 IRFS4227 IRFB117N20NFD IRF200S234 IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 150 V IRFB4321 IPP046N15N5 IRFP4568 IRF150P220 IRFS4321 IRB048N15N5 IRS211X IRS2186 2EDL811X Full-bridge 200 V IPP110N20N3 IRFB4227 IRF200P222 IRFP4668 IPB110N20N3LF IRFS4127 IRS211X IRS2186 2EDL811X 24 V 48 V 72 V Microcontrollers 12-72 V www.infineon.com/ups 51 Gate driver ICs D2PAK and D2PAK-7 Motor control ICs TO-247 Microcontrollers MOSFET TO-220 breakdown voltage XENSIVTM sensors Topology XMC1300 series Packages Inverter/charger MOSFETs Battery voltage Power ICs Battery - Grid Applications UPS 20-300 V MOSFETs Unidirectional Load Grid AC-DC charger DC-DC step up 500-950 V MOSFETs Sensing Inverter + filter Multistage WBG semiconductors Battery 12 V / 24 V Unidirectional power stage (output stage) Inverter stage DC-DC stage LS gate driver ADC PWM generation Display drive StrongIRFETTM LS gate driver CoolMOSTM HB driver HF transformer HB driver Power ICs XMC1300 Discrete IGBTs Battery + Gate driver ICs Battery - Grid TO-220 TO-247 D2PAK and D2PAK-7 Gate drivers 12 V Push-pull 40 V IRFB7430 IRFB7434 IRFP7718 IRFS7430 IRFS7430-7P IRF7430 60 V IRFB7540 IRFB7545 IRF60B217 IRS44273 IRS4427 1EDN851X 2EDN852X 75 V 24 V Push-pull 75 V IRFP7718 IRFB3077 IRFB3207 IRFB7730 IRFB7734 100 V 150 V Microcontrollers www.infineon.com/ups 52 XMC1300 series IRFS7530-7P IRFB4115 IRFB4321 IPP046N15N5 IRFB4228 IRFB4019 IRFP7718 IRFS7730 IRFS7734 IRF100P218 IRFP4468 IRFS4010 IRF3610S IRF150P220 IRFS4321 IRFS4115 IRB048N15N5 IRFS4615 Microcontrollers MOSFET breakdown voltage XENSIVTM sensors Topology Packages Battery voltage Motor control ICs Unidirectional DC-DC stage Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Topology MOSFET breakdown voltage TO-220 TO-247 Gate drivers 200 V Full-bridge inverter 120 VAC 300 V IPP410N30N IRFB4137 IRF300P226 IRF300P227 IRFP4868 IRFP4137 IRS211X IRS2186 400 V Full-bridge inverter 220 VAC 500 V IPP50R280CE IPP50R380CE IPP50R190CE IPW50R190CE IRS211X IRS2186 TO-247 PG-DIP-7 Microcontrollers Power ICs Battery voltage Gate driver ICs Unidirectional inverter stage Unidirectional charger Topology MOSFET breakdown voltage TO-220 12-72 V Flyback 650 V CoolSETTM 12-72 V Flyback 800 V CoolMOSTM P7 Integrated, ICE3AS03LJG, ICE3BS03LJG IPP80R750P7 IPP80R600P7 IPP80R450P7 IPP80R360P7 IPP80R280P7 www.infineon.com/ups 53 Packages XENSIVTM sensors Microcontrollers ICE3RBR1765JZ ICE3RBR0665JZ Microcontrollers Battery voltage Motor control ICs XMC1300 series Applications UPS Stage Topology Voltage class Technology Rectifier Three-phase 800 V/1600 V EasyBRIDGE, EconoBRIDGETM PFC Boost PFC / Vienna "T-type" 1200 V TRENCHSTOPTM IGBT6 Inverter Battery charger Part number IKW40N120CS6 IKQ75N120CS6 Boost PFC / Vienna rectifier 1200 V CoolSiCTM MOSFET F3L15MR12W2M1_B69 Boost PFC / Vienna "T-type" 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 Boost PFC 600 V/1200 V EasyPACKTM Boost PFC 1200 V CoolSiC TM Schottky diode PFC 600 V CoolMOSTM P7 IPP60R060P7 IPB60R060P7 PFC 600 V CoolMOSTM C7 IPP60R040C7 IPB60R040C7 NPC 1 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 IKZ50N65EH5 IKZ75N65EH5 NPC 1 650 V TRENCHSTOPTM 5 S5 IKW50N65ES5 IKW75N65ES5 NPC 1 650 V TRENCHSTOPTM HighSpeed3 IGBT Rapid diode FS3L50R07W2H3F_B11 NPC 2 1200 V TRENCHSTOPTM IGBT6 IKW40N120CS6 IKQ75N120CS6 NPC 2 1200 V CoolSiC TM Schottky diode NPC 2 1200 V TRENCHSTOPTM HighSpeed3 IGBT Rapid diode FS3L25R12W2H3_B11 F3L200R12W2H3_B11 F3L200R12W2H3_B47 NPC 2 650 V TRENCHSTOPTM 5 S5 IKW50N65ES5 IKW75N65ES5 Two-level 1200 V EconoPACKTM , EasyPACKTM FS75R12W2T4_B11 FS200R12KT4R_B11 Two-level 1200 V EconoDUALTM FF600R12ME4_B11 Three-level NPC1 600 V/1200 V EconoPACKTM F3L300R07PE4 Half-bridge 1200 V TRENCHSTOPTM IGBT6 IKW40N120CS6 IKQ75N120CS6 1200 V CoolSiCTM MOSFET FF6MR12W2M1_B11 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 Gate driver ICs Single-channel 1200 V EiceDRIVERTM 1ED Compact AUX - 650-800 V CoolSETTM www.infineon.com/ups 54 Communication interface WBG semiconductors Microcontroller Discrete IGBTs Auxiliary power supply voltage regulation Gate driver + isolation Power ICs Gate driver + isolation Gate driver ICs Battery charger Motor control ICs Load Microcontrollers Inverter XENSIVTM sensors Grid Active front end or rectifier Packages Online UPS power stage 500-950 V MOSFETs 20-300 V MOSFETs Online UPS Applications Solar Infineon provides a comprehensive portfolio to deliver the best efficiency and reliability for solar applications. Infineon's cutting edge technologies such as CoolMOSTM SJ MOSFETs, HighSpeed3 IGBT and TRENCHSTOPTM 5, CoolSiCTM Schottky diodes, CoolSiCTM MOSFETs, coreless transformer, driver, etc. combined with the rich experience and highest quality ensure the company's leader position in solar applications. The newly added ARM(R) CortexTM-M4 based MCU enables easy and high efficiency design. Single/Dual microinverter 250-600 W; 900 W String inverter 1-60 kw Central inverter 500-5000 kW OptiMOSTM SuperSO8/DirectFETTM | 75-150 V OptiMOSTM SuperSO8 | 60-200 V OptiMOSTM 150-300 V CoolMOSTM D2PAK/ThinPAK | 600-800 V CoolMOSTM TO-247 | 600 V/650 V | 19-99 m CoolSiCTM MOSFET TO-247-3/TO-247-4 | 1200 V CoolSiCTM Schottky diodes DPAK/TO-220 | 600 V/1200 V D2PAK | 650 V Gate driver ICs 2EDN EiceDRIVERTM Easy 1B/2B PrimePACKTM / EconoDUALTM 3 / MIPAQTM Pro EiceDRIVERTM 1ED Compact EiceDRIVERTM Enhanced 1ED020I12-F2/2ED020I12-F2 EiceDRIVERTM Enhanced 1ED020I12-F2/2ED020I12-F2 Schottky diode BAT165 Schottky diode Auxiliary power supply CoolSETTM 800 V XMC1xxx ARM(R) Cortex(R)-M0 XMC1xxx ARM(R) Cortex(R)-M0 XMC1xxx ARM(R) Cortex(R)-M0 XMC1xxx ARM(R) Cortex(R)-M0 XMC45xx ARM(R) Cortex(R)-M4 XMC45xx ARM(R) Cortex(R)-M4 XMC45xx ARM(R) Cortex(R)-M4 XMC45xx ARM(R) Cortex(R)-M4 Auxiliary power supply MPP tracker DC-AC DC-DC conversion conversion EiceDRIVERTM Sensing Energy storage (optional) EiceDRIVERTM ... Grid Sensing ... EiceDRIVERTM ... Microcontrollers Photovoltaic panels Gate driver ICs Infineon's products for complete solar system Sensing MCU with ARM(R) Cortex(R)-M4 MPPT calculation www.infineon.com/solar 55 PWM generation ADC Battery management XENSIVTM sensors Microcontrollers Power ICs 650 V TRENCHSTOPTM 5 / 1200 V TRENCHSTOPTM IGBT6 TO-247-3/TO-247-4/TO-247PLUS | 600 V/650 V/1200 V IGBTs Discrete IGBTs CoolSiCTM Schottky diodes TO-220/TO-247 | 650 V/1200 V Motor control ICs SiC diodes Packages MOSFETs Optimizer 250-750 W WBG semiconductors High efficiency designs for solar power systems 500-950 V MOSFETs 20-300 V MOSFETs Solar Applications Solar 20-300 V MOSFETs CoolMOSTM CoolMOSTM CoolSiCTM Schottky diode CoolSiCTM Schottky diode WBG semiconductors CoolMOSTM CoolMOSTM CoolSiCTM Schottky diode CoolSiCTM Schottky diode OptiMOSTM Gate driver ICs 500-950 V MOSFETs Grid PV OptiMOSTM DC 20 V to 90 V 45 V (typ.) OptiMOSTM OptiMOSTM Microinverter Gate driver ICs XMC1000/XMC4000 Microcontroller power supply MPPT calculation PWM generation ADC Half-bridge, full-bridge, LLC and other resonant topologies 60V BSC012N06NS BSC019N06NS BSC028N06NS BSC039N06NS BSB028N06NN3G - Up to 64 V Half-bridge, full-bridge, LLC and other resonant topologies 80V BSC030N08NS5 BSC037N08NS5 BSC052N08NS5 BSB044N08NN3G BSB104N08NP3 - Up to 80V Half-bridge, full-bridge, LLC and other resonant topologies 100V BSC035N10NS5 BSC040N10NS5 - IPB020N10N5 Up to 60V Flyback 150V BSC093N15NS5 BSC108N15NS5 BSC160N15NS5 BSC175N15NS5 BSB165N15NZ3 IPB041N15N5 IPB063N15N5 IPB108N15N3G Push-pull 200V BSC320N20NS3G - IPB107N20N3G Topology Package Voltage class CoolSiCTM Schottky diodes for microinverter Part number Current source DPAK 800V SPB17N80C3 Current/voltage source DPAK 650V IPB65R190C7 Topology Rectifier Package Voltage class TO-252 (DPAK) 1200V IDM08G120C5 IPB65R095C7 D2PAK IPB65R065C7 IPB65R045C7 ThinPAK 8x8 600V IPL60R185P7 IPL60R125P7 IPL60R105P7 IPL60R085P7 Functional block PFC, PWM/ resonant converter, synchronous rectification 600 V IDD05SG60C 650 V IDK04G65C5 Product category Product family Gate driver ICs EiceDRIVERTM 1ED Compact EiceDRIVERTM 2EDNx IPL60R065P7 IPL60R185C7 IPL60R125C7 IPL60R104C7 IPL60R065C7 650V IPL65R195C7 IPL65R130C7 IPL65R099C7 IPL65R070C7 www.infineon.com/solar Part number IDM02G120C5 IDM05G120C5 IPB65R125C7 Benefits 100 ns typical propagation delay time Functional isolation Separate source 8 V UVLO option (-)10V input robustness Output robust against reverse current Microcontrollers for microinverter Topology Package Power ICs Up to 48 V CoolMOSTM SJ MOSFETs for microinverter 56 D2PAK Gate driver ICs DirectFETTM Motor control ICs SuperSO8 Voltage class Technology Microcontroller All All XMC1000 Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211 Microcontroller All All XMC4000 Microcontrollers MOSFET breakdown voltage XENSIVTM sensors Topology Packages Input voltage Discrete IGBTs OptiMOSTM power MOSFETs for microinverter Applications Solar 20-300 V MOSFETs ~ DC 80 V (typ.) OptiMOSTM 500-950 V MOSFETs PV OptiMOSTM DC 20 V to 150 V 45 V (typ.) OptiMOSTM OptiMOSTM Optimizer WBG semiconductors Gate driver ICs XMC1000 Microcontroller power supply MPPT calculation PWM generation ADC MOSFET breakdown voltage SuperSO8 S308/PQFN 3.3 x 3.3 DirectFETTM D2PAK and DPAK Up to 48 V Buck-boost 60 V BSC012N06NS BSC016N06NS BSZ042N06NS BSB028N06NN3G IPB026N06N Up to 64 V Buck-boost 80 V BSC027N08NS5 BSC040N08NS5 BSC052N08NS5 BSC117N08NS5 BSZ075N08NS5 BSZ084N08NS5 BSZ110N08NS5 BSB044N08NN3G IPB017N08N5 IPB031N08N5 IPB049N08N5 Up to 80 V Buck-boost 100 V BSC035N10NS5 BSC040N10NS5 BSC060N10NS3 BSZ097N10NS5 BSB056N10NN3 BSF134N10NJ3G IPB020N10N5 Up to 125 V Buck-boost 200 V BSC320N20NS3G BSZ900N20NS3 G Microcontrollers for power optimizer Topology Package Voltage class Technology All All XMC1000 Microcontroller supply Linear voltage regulator Up to 20 V IFX1763, IFX54441, IFX54211 Microcontroller All All XMC4000 IPD320N20N3G www.infineon.com/solar 57 Packages XENSIVTM sensors Microcontrollers Motor control ICs Microcontroller - Power ICs Topology Gate driver ICs Input voltage Discrete IGBTs OptiMOSTM MOSFETs for optimizer DC-DC power conversion Applications Solar 20-300 V MOSFETs Single-phase string inverter - multilevel topology PV WBG semiconductors OptiMOSTM 5 Discrete IGBTs OptiMOSTM 5 Grid Sensors Power ICs EiceDRIVERTM PWM XMC4000 ADC Gate driver ICs PWM generation In multilevel inverter, four high voltage MOSFETs/IGBTs in H-bridge topology are replaced with a higher number of lower voltage MOSFETs. Compared to a conventional H-bridge inverter, a multilevel inverter, composed of lower voltage MOSFETs, offers several advantages: With much lower RDS(on) and switching loss parameters it significantly reduces conduction and switching losses Higher effective output frequency (smaller magnetics) is possible with lower switching losses Improved EMC due to reduced switching voltages Significant reduction in cooling system, size and weight Discrete power devices for multilevel string inverter Topology Flying-capacitor-based active neutral-point-clamp multilevel inverter www.infineon.com/solar 58 MOSFET breakdown voltage 150 V Family OptiMOSTM 5 SuperSO8 BSC093N15NS5 BSC110N15NS5 BSC160N15NS5 D2PAK IPB044N15N5 IPB048N15N5 IPB060N15N5 IPB073N15N5 TO-220 IPP051N15N5 IPP076N15N5 TO-247 Motor control ICs MPPT calculation Microcontrollers MPPT Microcontroller power supply - XENSIVTM sensors EiceDRIVERTM Packages PV OptiMOSTM 5 OptiMOSTM 5 PV OptiMOSTM 5 CoolMOSTM/ IGBT SiC diode / Rapid diode OptiMOSTM 5 OptiMOSTM 5 OptiMOSTM 5 Boost 500-950 V MOSFETs Multilevel inverter Applications Solar Single-phase string inverter (non-isolated) - standard solution Inverter Boost PV PV <1000 V (typ.) Grid PV Sensors Phase B Phase A 1200 V TRENCHSTOPTM IGBT6/ CoolSiCTM MOSFET < 600 VDC (typ.) 1200 V CoolSiCTM Schottky diode 1200 V TRENCHSTOPTM IGBT6/ CoolSiCTM MOSFET TRENCHSTOPTM 5/TRENCHSTOPTM IGBT6 CoolMOSTM PV TRENCHSTOPTM 5/ TRENCHSTOPTM IGBT6 Phase C CoolSiCTM Schottky diode/ Rapid diode 650 V TRENCHSTOPTM 5 1200 V CoolSiCTM MOSFET 3~ Grid Grid Sensors EiceDRIVERTM EiceDRIVERTM ... EiceDRIVERTM ... ... ... PWM WBG semiconductors EiceDRIVERTM PWM MPPT MPPT calculation PWM generation XMC4000 MPPT Microcontroller power supply XMC4000 Microcontroller power supply 500-950 V MOSFETs Inverter Boost 20-300 V MOSFETs Three-phase string inverter MPPT calculation PWM generation ADC ADC DC-DC Inverter Three-phase Boost Inverter Voltage class Part number 600 V IPW60R040C7 CoolSiCTM diode 650 V IDW20G65C5 CoolMOSTM P7 600 V IPW60R037P7 CoolSiCTM diode 650 V IDW20G65C5 Rapid diode 650 V IDW15E65D2 TRENCHSTOPTM IGBT3 600 V IKW40N60H3 TRENCHSTOPTM 5 H5 650 V IKW40N65H5 CoolMOSTM P7 600 V IPW60R037P7 TRENCHSTOPTM IGBT6 1200 V CoolSiCTM MOSFET 1200 V CoolSiCTMSchottky diode generation 5 1200 V TRENCHSTOPTM IGBT6 1200 V TRENCHSTOPTM 5 S5 650 V IKW40N120CS6 IKQ75N120CS6 IKY75N120CS6 IMW120R045M1 IMZ120R045M1 IDW20G120C5B IDW30G120C5B IDW40G120C5B IKW40N120CS6 IKQ75N120CS6 IKY75N120CS6 IKW40N65ES5 TRENCHSTOPTM 5 L5 650 V IKW30N65EL5 Gate driver ICs for string inverter Power device Driving method Voltage class Part number IGBT/SiC MOSFET Single-channel 1200V EiceDRIVERTM 1ED Compact EiceDRIVERTM Enhanced 1ED020I12-F2 IGBT/SiC MOSFET Half-bridge and high- and low-side 1200V EiceDRIVERTM Enhanced 2ED020I12-F2/FI Voltage class Microcontrollers CoolSETTM for string inverter Part number 800V ICE3AR2280JZ 650V ICE3BR1765JZ Power ICs Product series CoolMOSTM C7 Gate driver ICs Function Boost Motor control ICs Inverter type Single-phase Discrete IGBTs Discrete power devices for string inverter Package Voltage class Microcontroller All All XMC1000 Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211 Microcontroller All All XMC4000 For Infineon's extensive module portfolio for string and central inverters, visit: www.infineon.com/solar www.infineon.com/igbtmodules1200v 59 Technology Packages Topology XENSIVTM sensors Microcontrollers for string inverter Over the last years, wireless charging has gained more and more traction in the market and is expected to heavily influence our daily lives in future. Infineon offers a broad portfolio of efficient, high-quality products and solutions to serve the key requirements of the dominant market standards: inductive (Qi (WPC)) and resonant (AirFuel). Whether you charge a smartphone (e.g. at home or in the car), a handful of wearables, a power tool, a laptop or a service robot, Infineon's components and solutions help you overcome a wide range of common wireless power transfer challenges for consumer, industrial and automotive wireless charging designs. Wireless charging standards Charges one device but with better user experience Charges multiple devices Rx-Tx communication In-band communication Many end markets for wireless battery charging Infineon's key enabling products for consumer, industrial and automotive solutions Low and medium voltage power MOSFETs - OptiMOSTM and StrongIRFETTM Gate driver ICs - EiceDRIVERTM or DC-DC low voltage gate driver 32-bit microcontrollers - XMCTM and AURIXTM Wireless power controller (including software IP) - XMCTM-SC and AURIXTM P-channel and N-channel small signal power MOSFETs High voltage power MOSFETs - CoolMOSTM superjunction MOSFETs PWM/flyback controllers and integrated power stage ICs - CoolSETTM Gallium nitride (GaN) - CoolGaNTM e-mode HEMTs Dedicated automotive power products - MOSFETs, DC-DC, LDO, PMIC with ASIL qualification Voltage and buck regulators for component and bridge supply Authentication - OPTIGATM Trust UWP www.infineon.com/wirelesscharging 60 Bluetooth low energy or in-band communication Power ICs Charges only one device Gate driver ICs Free positioning (up to >30 mm vertical freedom) Motor control ICs Positioning more flexible (X and Y direction) Microcontrollers Exact positioning Positioning of receiver application XENSIVTM sensors Resonant AirFuel 6.78 MHz Discrete IGBTs Magnetic resonance Qi inductive 110-205 kHz Standard Number of devices charged Inductive multi-coil Packages Inductive single-coil 500-950 V MOSFETs Cost-effective and secure offerings for consumer, industrial and automotive applications WBG semiconductors Wireless charging solutions 20-300 V MOSFETs Applications Wireless charging Applications Wireless charging Wireless charging receiver Wireless charging transmitter Transmitter (Tx) Half-bridge or full-bridge inverter Mains 85...264 V~ AC-DC converter 5-20 V 500-950 V MOSFETs Selection coil 1 Selection coil 2 Pre-regulators (if needed) Receiver (Rx) Discrete IGBTs Adapter System diagram: inductive wireless charging WBG semiconductors Especially for the emerging higher power (15 W+) transmitter applications equipping your half- or full-bridge topologies with components from the OptiMOSTM product family, driver ICs, and voltage regulators pays off with superior power transfer performance. Single and dual N-channel OptiMOSTM versions with excellent RDS(on) and charge characteristics are available in small footprint packages for your wireless power transmitter design. For multicoil designs, there are very suitable IR MOSFETTM devices in 2 x 2 mm packages ready to use. In addition, Infineon's XMCTM 32-bit industrial microcontrollers provide the flexibility to charge "just about anything". Infineon's portfolio supports individual needs by either an ARM(R) Cortex(R)-M0 core (XMC1000 family) or a Cortex(R)-M4 core with a floating point unit (XMC4000 family). In addition, wireless power controllers - XMCTM-SC, including software IP, are available for selected applications in our portfolio (for further details check page 261). Ensuring that you, your data, and your devices remain secured and safe during charging, Infineon adds a new member to its OPTIGATM Trust family - the OPTIGATM Trust UWP. Infineon readily supports the WPC Qi authentication standard with an integrated turnkey solution. 20-300 V MOSFETs Components for inductive designs for consumer and industrial applications Selection coil N Power ICs MCU or wireless power controller Driver Inductive (Qi) and low frequency transmitter solutions 20 V PQFN 2 x 2 IRLHS6242 11.7 (= 2.5 V drive capable) Right fit IRFHS8242 21 Right fit BSC0996NS 11.8 Right fit BSC0993ND 7 Best performance BSZ0589NS 4.4 Best performance BSZ0994NS 8.6 Right fit BSZ0909NS 15 Right fit BSZ0909ND 25 Best performance BSZ0910ND 13 Best performance IRFHS8342 25 Right fit IRLHS6342 15.5 (= 2.5 V drive capable) Best performance BSZ097N04LS 14.2 Right fit 30 V Super SO8 PQFN 3.3 x 3.3 PQFN 3.3 x 3.3 dual PQFN 2 x 2 40 V PQFN 3.3 x 3.3 Driver ICs PX3519, IRS2301S, WCDSC006* Microcontroller or wireless power controller XMCTM MCU and wireless power controller XMCTM-SC* (including software IP) Voltage regulators IR3841M, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV Small signal MOSFETs Please check online 1) Authentication SLS32AIA020Ux - OPTIGATM Trust UWP (USON10 3 x 3 package) Find here additional MOSFET and driver IC offerings! www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder www.infineon.com/wirelesscharging * Coming soon 1) www.infineon.com/smallsignalmosfets 61 Recommendation Gate driver ICs MOSFETs 25 V RDS(on) max @ VGS = 4.5 V [mQ] Motor control ICs Part number Microcontrollers Package XENSIVTM sensors Voltage class Packages Products Applications Wireless charging 500-950 V MOSFETs WBG semiconductors Infineon offers superior power MOSFET technology especially in the 30-100 V classes for class D inverter designs and in the 150-250 V voltage classes for class E inverters to address MHz switching implementations. We provide industry leading products when it comes to fast switching and have the best figure of merit for gate charge times RDS(on) and for Coss thus enabling our customer to achieve 6.78 MHz inverter designs using robust silicon MOSFET technology. CoolGaNTM 600 V with low and highly linear COSS, as well as low QC, enables high efficiency at higher power levels, especially in higher power class E designs. The CoolGaNTM portfolio qualifying for the use in wireless charging applications will be extended by adding 100 V and 200 V products over the next years. Infineon offers the "coolest" driver ICs in the industry, already available as low-side drivers for class E implementations and very soon as level shifted half-bridge driver for class D topologies. If your transmitter design uses a pre-regulator (buck or buck/boost) to control the input voltage of your amplifier you can find OptiMOSTM solutions in the 20-300V MOSFETs section. Here again, the XMCTM industrial mircocontroller and the XMCTM-SC wireless power controller, including software IP, are a great fit to charge "just about anything". 20-300 V MOSFETs Components for resonant designs for consumer and industrial AC-DC converter Pre-regulators Make use of our evaluation boards for low cost charger and adapter applications (see pages 34 and 36). Receiver EiceDRIVERTM 2EDL gate driver Power ICs EiceDRIVERTM 2EDL gate driver Discrete IGBTs System diagram: resonant wireless charging - class D, full-bridge PQFN 2 x 2 dual PQFN 3.3 x 3.3 dual Part number RDS(on) max @ VGS = 4.5 [mQ] Driver ICs IRLHS6376PBF BSZ0909ND BSZ0910ND SOT-23 IRLML0030PBF 40 V SOT-23 IRLML0040 60 V SOT-23 IRLML0060 80 V PQFN 2 x 2 IRL80HS120 100 V PQFN 2 x 2 IRL100HS121 150 V PQFN 3.3 x 3.3 BSZ900N15NS3 BSZ520N15NS3 200 V BSZ900N20NS3 BSZ22DN20NS3 BSZ12DN20NS3 250 V BSZ42DN25NS3 EiceDRIVERTM 2EDL71*, 1EDN7512, 2EDN7524 48 25 13 33 62 98 32 42 75** 42** 78** 200** 111** 375** GaN e-mode HEMT Microcontroller or wireless power controller Voltage regulators Small signal MOSFETs GaN EiceDRIVERTM ICs 1EDS5663H, 1EDF5673F, 1EDF5673K CoolGaNTM 600 V e-mode GaN HEMT IGT60R190D1S (HSOF-8-3) XMCTM MCU and wireless power controller XMCTM-SC* (including software IP) IR3841M, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV Please check online1) Find here additional MOSFET and driver IC offerings! www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder www.infineon.com/wirelesscharging 62 * Coming soon ** VGS = 8 V 1) www.infineon.com/smallsignalmosfets QG typical [nC] 2.8 1.8 5.6 2.75 2.8 2.6 3.5 2.7 4.1** 7.2** 7.2** 3.5** 5.4** 3.6** Coss typical [pF] 32 120 230 84 49 37 68 62 46 80 52 24 39 21 Topology Class D Class D Class D Class D Class D Class D Class D/E Class D/E Class E Class E Class E Class E Class E Class E Motor control ICs 30 V Package Microcontrollers MOSFETs Voltage class XENSIVTM sensors Products Packages Components for resonant (AirFuel) and high frequency solutions Gate driver ICs MCU or wireless power controller Applications Wireless charging System diagram: AURIXTM-based wireless charger - three-coil TLD5190QV (Buck/Boost) IPG20N10S4L-22 (100 V) (coil switches) IPG16N10S4L-61A (2x Dual FET) 500-950 V MOSFETs Discrete IGBTs VBAT 5-40V WBG semiconductors The next generation of in-cabin wireless charging systems have to meet strict automotive safety, security, environmental and regulatory requirements while still enabling industry-leading charging performance and efficiency. Infineon's AURIXTM microcontroller, voltage regulators, power MOSFET technologies and network ICs will easily support these requirements with a complete charging solution. With 15 W charging that meets existing standards, including fast charge smartphones, the solution easily supports future changes with a software update. Infineon's new innovative foreign object detection (FOD) system or our unique improved power drive architecture that provides unparalleled EMI performance are just two benefits out of many to address the design challenges in the automotive wireless charging market. Discover our complete offerings for in-cabin charging on a system level on Infineon's wireless charging webpage - something you will not find just anywhere. 20-300 V MOSFETs Wireless in-car charging (automotive) AUIRS2301S (Driver) Coil 2 Coil 3 IPG20N04S4L-11A (Dual FET) Gate driver ICs AUIRS2301S (Driver) NFC radio TLE7250VSJ (CAN) Inverter automotive grade MOSFETs Automotive products for wireless charging Coil selection switch Voltage class 40 V Voltage class Part number RDS(on) max @ VGS = 4.5 V [mQ] QG typical [nC] SuperSO8 5 x 6 Dual IPG20N04S4-12A 15.5 9 S3O8 3.3 x 3.3 IPZ40N04S5L-4R8 6.7 11 IPZ40N04S5L-7R4 10.7 Package Part number 6.5 RDS(on) max @ VGS = 4.5 V [mQ] RDS(on) max @ VGS = 10 V [mQ] 60 V TDSON-8 IPG20N06S4L-11A 15.8 11.2 100 V SuperSO8 5 x 6 Dual IPG20N10S4L-22A 28 22 IPG20N10S4L-35A 45 35 IPG16N10S4L-61A 78 61 Microcontroller and wireless power controller AURIXTM SAK-TC212S-4F100N, SAK-TC212S-8F133SC Power supply TLD5190 - buck-boost controller/TLE8366, TLS4120x, TLS203x/TLF35584 - safety MCU supply + CAN supply CAN TLE7250SJ - high performance CAN transceiver Drivers AUIRS2301S www.infineon.com/wirelesscharging 63 Package Motor control ICs Automotive products for wireless charging CAN interface Microcontrollers 3.3 V Coil 1 Wireless power controller XENSIVTM sensors TLS203B0 (LDO) AURIX TM SAK-TC212S-8F133SC Packages 5 V gate DRV IPG20N04S4L-11A (Dual FET) Power ICs TLE8366 Pre-regulator Applications Wireless charging 15 W inductive 1-15 W inductive Resonant solutions 60-200 W inductive 2.5 W resonant 16/20 W resonant >20 W resonant WBG semiconductors Inductive solutions 500-950 V MOSFETs Master your design challenges with Infineon. With our broad range of designs, customers have the possibility to make wireless charging available for different kinds of applications. For more information on the availability of our boards please visit www.infineon.com/wirelesscharging or get in contact with us via www.infineon.com/support. 20-300 V MOSFETs System solutions for wireless charging Discrete IGBTs Dedicated for automotive in-cabin wireless charging Power ICs Consumer/industrial Find the right solutions for your wireless charging designs in four steps Try now! www.infineon.com/wirelesscharging 64 Packages XENSIVTM sensors Microcontrollers Motor control ICs Infineon's selection tool for wireless charging allows you to find the right solutions for your designs in just four steps: select the application, power range, standard and the topology you want to apply and get an overview of Infineon's most recommended offerings. Gate driver ICs Automotive Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Application support Videos www.infineon.com/mediacenter Motor control ICs www.infineon.com/microwave www.infineon.com/motorcontrol www.infineon.com/multicopter www.infineon.com/optiga www.infineon.com/service-robotics www.infineon.com/smps www.infineon.com/solar www.infineon.com/ups www.infineon.com/welding www.infineon.com/wirelesspower Microcontrollers www.infineon.com/audio www.infineon.com/automation www.infineon.com/consumer www.infineon.com/dataprocessing www.infineon.com/emobility www.infineon.com/ev-charging www.infineon.com/homeappliance www.infineon.com/industrial-robotics www.infineon.com/lev www.infineon.com/lighting XENSIVTM sensors Learn more about our system solutions for your application. Find block diagrams, evaluation boards, interactive 3D models, videos, tools and related material for download. Packages Useful links and helpful information Gate driver ICs Infineon support for applications Applications OptiMOSTM and StrongIRFETTM OptiMOSTM Robust and excellent price/performance ratio Best-in-class technology Designed for industrial applications Designed for high performance applications Optimized for low switching frequency Optimized for high switching frequency High current carrying capability Industry's best figure of merit Rugged silicon High efficiency and power density www.infineon.com/powermosfet-12V-300V 66 Packages XENSIVTM sensors Microcontrollers Motor control ICs StrongIRFETTM WBG semiconductors OptiMOSTM power MOSFETs provide best-in-class performance. Features include ultralow RDS(on), as well as low charge for high switching frequency applications. StrongIRFETTM power MOSFETs are designed for drives applications and are ideal for designs with a low switching frequency, as well as those that require a high current carrying capability. Discrete IGBTs Infineon's highly innovative OptiMOSTM and StrongIRFETTM families consistently meet the highest quality and performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and figure of merit (FOM). Power ICs Infineon's semiconductors are designed to bring greater efficiency, power density and cost-effectiveness. The full range of OptiMOSTM and StrongIRFETTM power MOSFETs enables innovation and performance in applications such as switch mode power supplies (SMPS), battery powered applications, motor control and drives, inverters, and computing. Gate driver ICs 20-300 V MOSFETs N-channel power MOSFETs 500-950 V MOSFETs 20-300 V MOSFETs OptiMOSTM and StrongIRFETTM Applications OptiMOSTM and StrongIRFETTM OptiMOSTM OptiMOSTM 5 25/30/40/60 V OptiMOSTM 25/30 V OptiMOSTM 3 40-60 V OptiMOSTM 3 75/120 V WBG semiconductors IR MOSFETTM 40-300 V OptiMOSTM 5 80/100/150 V OptiMOSTM 3 80/100/150 V OptiMOSTM 3 200/250/300 V Active and preferred Active and preferred Active Discrete IGBTs Active Infineon's power MOSFET 20-300 V product portfolio is divided into active and preferred", referring to the latest technology available offering best-in-class performance, as well as active", which consists of well-established technologies which complete this broad portfolio. OptiMOSTM 6 power MOSFETs 40 V are the newest addition to the OptiMOSTM product family available either in SuperSO8 or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high efficiency over a wide range of output power are required. For the other voltage classes, from 25 V up to 150 V, OptiMOSTM 5 represents the latest generation in the market, offering either best in class (BiC) or price/performance solutions. For high frequency applications, the product portfolio is complemented by OptiMOSTM 3 power MOSFETs 40-50 V as standard components. The active and preferred" OptiMOSTM 3 power MOSFETs 75-120 V, as well as 200-300 V is the best fit portfolio either in low or high frequency applications with a range of products covering from BiC to standard parts. Power ICs StrongIRFETTM Gen. 1 20-300 V 500-950 V MOSFETs OptiMOSTM 6 40 V Gate driver ICs StrongIRFETTM 20-300 V MOSFETs Technology development and product family positioning The diagrams below summarize the recommended technology for best fit standard components, price/performance and differentiated products according to switching frequency. StrongIRFETTM 20-75 V Best-fit standard components OptiMOSTM 3 200-300 V OptiMOSTM 5 20-150 V OptiMOSTM 3 20-150 V StrongIRFETTM 80-300 V 20 V OptiMOSTM 3 200-300 V OptiMOSTM 3 80-150 V 80 V Breakdown voltage www.infineon.com/powermosfet-12V-300V 67 Best-in-class OptiMOSTM 5 20-150 V OptiMOSTM 5 80-150 V Price performance Microcontrollers Best-in-class OptiMOSTM 5 20-150 V XENSIVTM sensors Differentiated products High frequency application >100 kHz 300 V 20 V 80 V Breakdown voltage 300 V Packages Low frequency application <100 kHz Motor control ICs StrongIRFETTM Gen. 1 is recommended for 20-300 V applications when BiC performance is not essential and cost is a more significant consideration. Applications OptiMOSTM and StrongIRFETTM 40 V 60 V 75 V to 80 V Low power OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM Power tools, Multicopter, Battery, Industrial Drives High power (LEV, LSEV) Solar 100 V 135 V to 150 V 200 V OptiMOSTM StrongIRFETTM 250 V 300 V WBG semiconductors 20 V to 30 V Battery powered Recommended voltage 500-950 V MOSFETs OptiMOSTM and StrongIRFETTM portfolio, covering 20 up to 300 V MOSFETs, can address a broad range of needs from low to high switching frequencies. The tables below provide a guidance overview for the recommended OptiMOSTM or StrongIRFETTM products for each major sub-application and voltage class. 20-300 V MOSFETs Guidance for applications and voltage classes Adapter / Charger PC Power SMPS LCD TV Server AC-DC StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM fast switching OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM Discrete IGBTs www.infineon.com/powermosfet-12V-300V 68 StrongIRFETTM recommended OptiMOSTM recommended StrongIRFETTM available OptiMOSTM available Packages XENSIVTM sensors Microcontrollers Telecom Power ICs Offline Gate driver ICs UPS OptiMOSTM Motor control ICs Inverters slow switching Applications OptiMOSTM and StrongIRFETTM TO-220 D2PAK D2PAK 7-pin TO-leadless 500-950 V MOSFETs TO-247 20-300 V MOSFETs Space saving and high performance packages 4.4 2.3 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9 195.0 195.0 195.0 240.0 300.0 2.0 0.5 0.5 0.5 0.4 SuperSO8 Power Block PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFETTM For highest efficiency and power management Significant design shrink For highest efficiency and power management Enables significant space saving Best thermal behavior in a tiny footprint 1.0 1.0 1.0 0.9 Small: 0.65 Medium: 0.65 Large: 0.71 5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8 Medium: 6.3 x 4.9 Large: 9.1 x 6.98 100.0 50.0 40.0 18.5 Small: 75.0 Medium: 180.0 Large: 375.0 0.8 1.5 3.2 11.1 0.5 Current capability [A] Thermal resistance RthJC [K/W] Height [mm] Outline [mm] Current capability [A] www.infineon.com/powermosfet-12V-300V 69 Packages XENSIVTM sensors Microcontrollers Motor control ICs Thermal resistance RthJC [K/W] Discrete IGBTs 4.4 40.15 x 15.9 Power ICs 4.4 Outline [mm] Gate driver ICs 5.0 WBG semiconductors Optimized for high power applications and high current capability Height [mm] Applications OptiMOSTM and StrongIRFETTM Furthermore, Infineon offers innovative packages such as DirectFETTM and TO-leadless. DirectFETTM is designed for high frequency applications by offering lowest parasitic resistance. This package is available in three different sizes: small, medium and large. TO-leadless is optimized to handle currents of up to 300 A, increasing power density with a substantial reduction in footprint. 400 DirectFETTM L D2PAK 7-pin+ 300 Discrete IGBTs TOLL 250 Imax [A] 500-950 V MOSFETs The broad portfolio enables footprint reduction, boosted current rating, and optimized thermal performance. While the surface mount leadless devices enable footprint reduction, through-hole packages are characterized by a high power rating. WBG semiconductors OptiMOSTM and StrongIRFETTM technologies are available in different packages to address the demands for higher current carrying capability and significant space saving. 20-300 V MOSFETs Discrete and integrated packages D2PAK 7-pin 200 D2PAK DirectFETTM M TO-247 100 DirectFETTM S Super SO8 DPAK I2PAK TO-220 TO-220 (FullPAK) IPAK SMD (leadless + dual side cooling) SMD (leadless) 50 PQFN 3.3 x 3.3 Power Block 5 x 6 PQFN 2 x 2 Legend Power ICs 150 SMD (with leads) SO-8 THD 20 40 60 80 100 150 300 400 500 Gate driver ICs Outline [mm2] SC-59 2.5 SOT-89 SOT-223 SOT-23 SOT-323 SOT-363 10 20 30 Outline [mm2] www.infineon.com/powermosfet-12V-300V 70 40 50 Products are offered in single, dual and complementary configurations and are suitable for a wide range of applications, including battery protection, LED lighting, low voltage drives and DC-DC converters. Microcontrollers Imax [A] 5 XENSIVTM sensors Small signal and small power MOSFETs are available in eight industry-standard package types ranging from the largest SOT-223 to the smallest SOT-363. TSOP-6 Packages 10 Motor control ICs Small signal and small power MOSFETs Applications OptiMOSTM Linear FET OptiMOSTM Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (RDS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art RDS(on) of a trench MOSFET, as well as the wide safe operating area of a classic planar MOSFET. This new product is the perfect fit for hot swap and e-fuse applications commonly found in telecom and battery management systems. OptiMOSTM Linear FET prevents damage at the load in case of a short circuit by limiting high inrush currents. OptiMOSTM Linear FET is currently available in three voltage classes - 100 V, 150 V, and 200 V - in either D2PAK or D2PAK 7-pin package. Discrete IGBTs SOA comparison OptiMOSTM 5 RDS(on) = 1.7 m Power ICs Whilst the OptiMOSTM 5 100 V, 1.7 m power MOSFET has a SOA of 0.5 A, the OptiMOSTM Linear FET version at the same RDS(on) offers a much wider SOA of 11.5 A (@ 54 V, 10 ms). OptiMOSTM Linear FET RDS(on) = 1.7 m 103 103 1 s 1 s 10 s 100 s 10 ms Gate driver ICs 10 s 102 WBG semiconductors Combining low on-state resistance (RDS(on)) with wide safe operating area (SOA) 500-950 V MOSFETs 20-300 V MOSFETs OptiMOSTM Linear FET 100 s 102 1 ms 101 Motor control ICs ID [A] ID [A] 1 ms DC 101 10-1 100 10-1 100 101 103 10-1 10-1 100 101 VDS [V] VDS [V] 0.5 A @ 54 V tpulse= 10 ms 11.5 A @ 54 V tpulse= 10 ms www.infineon.com/optimos-linearfet 71 102 102 103 Packages DC 100 XENSIVTM sensors Microcontrollers 10 ms Infineon's OptiMOSTM 6 power MOSFET 40 V family offers an optimized solution for synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless and quick chargers. The improved performance in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) yields an efficiency improvement, allowing easier thermal design and less paralleling, leading to system cost reduction. In addition, the best-in-class RDS(on) makes these devices suitable for ORing circuits. Infineon's market-leading OptiMOSTM 6 power MOSFETs 40 V are available in two different packages: SuperSO8 - 5 x 6 mm with RDS(on) ranging from 5.9 m down to 0.7 m PQFN 3x3 - 3.3 x 3.3 mm with RDS(on) ranging from 6.3 m down to 1.8 m 500-950 V MOSFETs WBG semiconductors OptiMOSTM 6 40 V devices are setting a new technology standard in the field of discrete MOSFET devices. Compared to alternative products, Infineon's leading thin wafer technology enables significant performance benefits compared to OptiMOSTM 5: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Discrete IGBTs Next generation of cutting edge MOSFETs Power ICs OptiMOSTM 6 power MOSFETs 40 V 20-300 V MOSFETs Applications OptiMOSTM 6 UT fsw UGS Gate drive UGS Gate drive Microcontrollers Motor control ICs Gate driver ICs SMPS application: syncronous rectification www.infineon.com/optimos6 72 Packages XENSIVTM sensors Controller At the low output power range, where switching losses due to parasitic capacitance in the MOSFET are dominating, OptiMOSTM 6 power MOSFET BSC010N04LS6 achieves the same efficiency as the OptiMOSTM 5 power MOSFET BSC014N04LS at 40% lower RDS(on). Discrete IGBTs Moreover, compared to the OptiMOSTM 5 40 V 1.0 m power MOSFET, the OptiMOSTM 6 generation achieves lower switching losses at high load with the same RDS(on). This combination leads to an overall efficiency optimization in low and high load operating points. 500-950 V MOSFETs In SMPS applications, OptiMOSTM 6 is the perfect solution for high efficiency over a wide range of output power, avoiding the trade-off between low and high load conditions. WBG semiconductors Lowest RDS(on)and Qg enabling high efficiency over a wide load range in SMPS applications 20-300 V MOSFETs Applications OptiMOSTM 6 99.8 99.7 99.5 Power ICs 99.4 99.3 99.2 OptiMOSTM 6 power MOSFET BSC010N04LS6 99.1 99.0 0 OptiMOSTM 5 power MOSFET BSC010N04LS OptiMOSTM 5 power MOSFET BSC014N04LS 100 200 300 400 500 600 700 800 900 1000 1200 www.infineon.com/optimos6 73 Packages XENSIVTM sensors Microcontrollers Motor control ICs Output power [W] 1100 Gate driver ICs Efficiency [%] 99.6 PQFN 2 x 2 PQFN 3.3 x 3.3 IRL6283MTRPBF RDS(on)=0.65 m <1 2-4 DirectFETTM IRLR6225TRPBF RDS(on)=4.0 m SuperSO8 IRFH6200TRPBF RDS(on)=0.99 m BSC026N02KS G RDS(on)=2.6 m IRLH6224TRPBF RDS(on)=3.0 m BSC046N02KS G RDS(on)=4.6 m IRL6297SDTRPBF** RDS(on)=3.8 m; dual 4-10 SO-8 IRF6201TRPBF RDS(on)=2.45 m IRF3717 RDS(on)=4.4 m IRLHS6242TRPBF RDS(on)=11.7 m IRLHS6276TRPBF** RDS(on)=45.0 m; dual IRLML6244 1) *** RDS(on)=21 m IRLML6246 1) *** RDS(on)=46 m WBG semiconductors > 10 SOT-23 OptiMOSTM and StrongIRFETTM 25 V logic level 2-4 4-10 > 10 IRF6898MTRPBF** RDS(on)=1.1 m BSB012NE2LXI** RDS(on)=1.2 m IRF6717MTRPBF RDS(on)=1.25 m IRF6894MTRPBF** RDS(on)=1.3 m BSB013NE2LXI** RDS(on)=1.3 m IRF6797MTRPBF** RDS(on)=1.4 m IRF6716M RDS(on)=1.6 m IRF6715MTRPBF RDS(on)=1.6 m IRF6893MTRPBF** RDS(on)=1.6 m IRF6892STRPBF** RDS(on)=1.7 m IRF6795MTRPBF** RDS(on)=1.8 m IRF6714MTRPBF RDS(on)=2.1 m BSF030NE2LQ RDS(on)=3.0 m BSF035NE2LQ RDS(on)=3.5 m IRF6811STRPBF** RDS(on)=3.7 m BSZ010NE2LS5 2) RDS(on)=1.0 m BSZ011NE2LS5 2) RDS(on)=1.1 m BSZ013NE2LS5I** RDS(on)=1.3 m BSZ014NE2LS5IF * ** RDS(on)=1.45 m BSZ017NE2LS5I** RDS(on)=1.7 m BSZ018NE2LS RDS(on)=1.8 m BSZ018NE2LSI** RDS(on)=1.8 m IRF6802SD RDS(on)=4.2 m IRF6710S2TRPBF RDS(on)=4.5 m IRF6712STRPBF RDS(on)=4.9 m IRF6810STRPBF** RDS(on)=5.2 m BSC024NE2LS RDS(on)=2.4 m BSC026NE2LS5 RDS(on)=2.6 m BSC032NE2LS RDS(on)=3.2 m IRFHM8228TRPBF RDS(on)=5.2 m BSZ060NE2LS RDS(on)=6.0 m IRFHM8235TRPBF RDS(on)=7.7 m BSC050NE2LS RDS(on)=5.0 m IRF8252 RDS(on)=2.7 m IRFML8244 RDS(on)=24 m www.infineon.com/powermosfet-12V-300V 74 SOT-23 BSC009NE2LS RDS(on)=0.9 m BSC009NE2LS5 RDS(on)=0.9 m BSC009NE2LS5I** RDS(on)=0.95 m BSC010NE2LS RDS(on)=1.0 m BSC010NE2LSI** RDS(on)=1.05 m BSC014NE2LSI** RDS(on)=1.4 m IRFH5250D RDS(on)=1.4 m BSC015NE2LS5I** RDS(on)=1.5 m BSC018NE2LS RDS(on)=1.8 m BSC018NE2LSI** RDS(on)=1.8 m BSZ031NE2LS5 RDS(on)=3.1 m BSZ033NE2LS5 RDS(on)=3.3 m BSZ036NE2LS RDS(on)=3.6 m BSZ037NE2LS5 2) RDS(on)= 3.7m BSZ039NE2LS5 2) RDS(on) = 3.9 m IRFHS8242 RDS(on)=13 m * Optimized for resonant applications (e.g. LLC converter) ** Monolithically integrated Schottky-like diode *** RDS(on) max @ VGS=4.5 V SO-8 Discrete IGBTs BSZ009NE2LS5 2) RDS(on)=0.9 m SuperSO8 Power ICs IRF6718L2TRPBF RDS(on)=0.7 m BSB008NE2LX RDS(on)=0.8 m PQFN 3.3 x 3.3 Gate driver ICs 1-2 PQFN 2 x 2 Motor control ICs <1 DirectFETTM Microcontrollers RDS(on) max @ VGS=10V [m] 1) 2) 2.5 VGS capable Coming soon XENSIVTM sensors TO-252 (DPAK) Packages RDS(on) max @ VGS=10V [m] 500-950 V MOSFETs OptiMOSTM and StrongIRFETTM 20V (super) logic level 20-300 V MOSFETs Applications Product portfolio Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs OptiMOSTM and StrongIRFETTM 25 V/30 V in Power Stage 3x3 and 5x6 Monolithically integrated Schottky like diode BVDSS [V] RDS(on), max. [ m] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ. High-side Low-side High-side Low-side 4.0 BSZ0910ND TISON 3 x 3 - 30 13 13 4.0 BSZ0909ND TISON 3 x 3 - 30 25 25 1.8 1.8 BSC0910NDI TISON 5 x 6 u 25 5.9 1.6 7.7 25.0 BSC0911ND TISON 5 x 6 - 25 4.8 1.7 7.7 25.0 BSC0921NDI TISON 5 x 6 u 30 7.0 2.1 5.8 21.0 BSC0923NDI TISON 5 x 6 u 30 7.0 3.7 5.2 12.2 BSC0924NDI TISON 5 x 6 u 30 7.0 5.2 5.2 8.6 BSC0925ND TISON 5 x 6 - 30 6.4 6.4 5.2 6.7 Gate driver ICs Package Motor control ICs Part number Package BSG0810NDI TISON 5 x 6 Monolithically integrated Schottky like diode u BVDSS [V] RDS(on), max. [ m] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ. BSG0811ND TISON 5 x 6 - 25 4.0 1.1 5.6 20.0 BSG0813NDI TISON 5 x 6 u 25 4.0 1.7 5.6 12.0 IRFH4257DTRPBF PQFN 5 x 4 u 25 4.7 1.8 9.7 23.0 High-side Low-side High-side Low-side 25 4.0 1.2 5.6 16.0 www.infineon.com/powermosfet-12V-300V 75 Packages XENSIVTM sensors Part number Microcontrollers OptiMOSTM and StrongIRFETTM 25 V/30 V in Power Block 5x6 and 5x4 OptiMOSTM and StrongIRFETTM 30V logic level RDS(on), max. @ VGS=10V [m] TO-252 (DPAK) TO-263 (DPAK) TO-263 (DPAK 7-pin) IPB009N03L G RDS(on)=0.95 m <1 IPD040N03L G RDS(on)=4.0 m IPD050N03L G RDS(on)=5.0 m IRLR8726TRPBF RDS(on)=5.8 m IPD060N03L G RDS(on)=6.0 m IPD075N03L G RDS(on)=7.5 m IPB042N03L G RDS(on)=4.2 m IPB055N03L G RDS(on)=5.5 m IPB065N03L G RDS(on)=6.5 m IPB080N03L G RDS(on)=8.0 m IRLR8729TRPBF RDS(on)=8.9 m IPD090N03L G RDS(on)=9.0 m IPD135N03L G RDS(on)=13.5 m IRLR3103 RDS(on)=19.0 m 500-950 V MOSFETs WBG semiconductors IPB034N03L G RDS(on)=3.4 m IRLB8721PBF RDS(on)=8.7 m Power ICs 10-25 IRLR8743TRPBF RDS(on)=3.1 m IPD031N03L G RDS(on)=3.1 m Discrete IGBTs 4-10 IRLB3813PBF RDS(on)=1.95 m IRLB8314PBF RDS(on)=2.4 m IRL3713PBF RDS(on)=3.0 m IRLB8743PBF RDS(on)=3.2 m IPP034N03L G RDS(on)=3.4 m IPP042N03L G RDS(on)=4.2 m IRLB8748PBF RDS(on)=4.8 m IPP055N03L G RDS(on)=5.5 m IRL8113PBF RDS(on)=6.0 m IRLS3813TRLPBF RDS(on)=1.95 m 1-2 2-4 TO-220 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 30V logic level PQFN 3.3 x 3.3 SuperSO8 TO-Leadless IPT004N03L RDS(on)=0.4 m <1 1-2 IRF8301MTRPBF RDS(on)=1.5 m IRF8302MTRPBF** RDS(on)=1.8 m www.infineon.com/powermosfet-12V-300V www.infineon.com/baredie ** Monolithically integrated Schottky-like diode *** RDS(on) typ. @VGS=4.5 V 76 Packages XENSIVTM sensors IPC055N03L3*** RDS(on)=2.7 m BSZ0500NSI** RDS(on)=1.5 m BSZ019N03LS RDS(on)=1.9 m BSZ0901NS RDS(on)=2.0 m BSZ0501NSI** RDS(on)=2.0 m IRFH8303TRPBF RDS(on)=1.1 m BSC011N03LS RDS(on)=1.1 m BSC011N03LSI** RDS(on)=1.1 m BSC011N03LST RDS(on)=1.1 m IRFH8307TRPBF RDS(on)=1.3 m BSC0500NSI** RDS(on)=1.3 m BSC014N03LS G RDS(on)=1.4 m BSC0901NS RDS(on)=1.9 m BSC0501NSI** RDS(on)=1.9 m BSC0901NSI** RDS(on)=2.0 m Gate driver ICs DirectFETTM Motor control ICs Bare die (RDS(on) typ.) Microcontrollers RDS(on), max. @ VGS=10V [m] OptiMOSTM and StrongIRFETTM 30V logic level 2-4 BSZ0503NSI** RDS(on)=3.4 m IRLHM630*** RDS(on)= 3.5 m BSZ035N03LS G RDS(on)=3.5 m IRFHM830 RDS(on)= 3.8 m BSZ0904NSI** RDS(on)=4.0 m IRFHM830D RDS(on)= 4.3 m BSZ0506NS RDS(on)=4.4 m IRFHM8326TRPBF RDS(on)=4.7 m IPC028N03L3 RDS(on)=5.0 m IPC022N03L3 RDS(on)=5.3 m 4-10 IRF8327S2 RDS(on)= 7.3 m IPC014N03L3 RDS(on)=10.3 m 10-63 BSZ050N03LS G RDS(on)=5.0 m BSZ058N03LS G RDS(on)=5.8 m IRFHM8329TRPBF RDS(on)=6.1 m BSZ065N03LS RDS(on)=6.5 m IRFHM8330TRPBF RDS(on)=6.6 m BSZ0994NS RDS(on)= 7.0 m IRFHM831 RDS(on)= 7.8 m BSZ088N03LS G RDS(on)=8.8 m IRFHM8334TRPBF RDS(on)=9.0 m BSZ100N03LS G RDS(on)=10.0 m BSZ0909NS RDS(on)=12.0 m IRFHM8337TRPBF RDS(on)=12.4 m BSZ130N03LS G RDS(on)=13.0 m IRFHM8363TRPBF RDS(on)=14.9 m 2 x 7.2 BSC072N03LD G RDS(on)=7.2 m BSC150N03LD G RDS(on)=15.0 m 500-950 V MOSFETs PQFN 2 x 2 IRF8788TRPBF RDS(on)=2.8 m IRF7862TRPBF RDS(on)=3.3 m IRF8734TRPBF RDS(on)=3.5 m IRF8736TRPBF RDS(on)=4.8 m IRF8721TRPBF RDS(on)=8.5 m IRF8714TRPBF RDS(on)=8.7 m IRF8707TRPBF RDS(on)=11.9 m IRL6342 1) *** RDS(on) = 14.6 m IRL6372 1) *** RDS(on) = 18 m; dual IRF7907TRPBF RDS(on)=11.8 m+16.4 m IRF8513TRPBF RDS(on)=2.7 m+15.5 m IRF8313TRPBF RDS(on)=15.5 m+15.5 m IRF7905TRPBF RDS(on)=17.1 m+21.8 m IRLHS6342*** RDS(on)= 16 m IRFHS8342 RDS(on)= 16 m IRLHS6376*** RDS(on)= 63 m; dual www.infineon.com/powermosfet-12V-300V 1) 2.5 VGS capable ** Monolithically integrated Schottky-like diode 77 *** RDS(on) max @VGS=4.5 V **** RDS(on) typ. @VGS= 4.5 V Packages XENSIVTM sensors 2 x 15 BSC120N03LS G RDS(on)=12.0 m IRFH8337TRPBF RDS(on)=12.8 m SO-8 Dual WBG semiconductors BSZ0902NSI** RDS(on)=2.8 m BSZ0502NSI** RDS(on)=2.8 m BSC020N03LS G RDS(on)=2.0 m BSC0502NSI** RDS(on)=2.4 m BSC025N03LS G RDS(on)=2.5 m BSC0902NS RDS(on)=2.6 m IRF8252TRPBF RDS(on)=2.7 m BSC0902NSI** RDS(on)=2.8 m IRFH8316TRPBF RDS(on)=2.95 m BSC030N03LS G RDS(on)= 3.0 m IRFH8318TRPBF RDS(on)=3.1 m BSC0503NSI** RDS(on)=3.2 m BSC034N03LS G RDS(on)=3.4 m BSC0504NSI** RDS(on)=3.7 m BSC0904NSI** RDS(on)=3.7 m IRFH8324TRPBF RDS(on)=4.1 m BSC042N03LS G RDS(on)=4.2 m BSC0906NS RDS(on)=4.5 m IRFH8321TRPBF RDS(on)=4.9 m IRFH8325TRPBF RDS(on)=5.0 m BSC050N03LS G RDS(on)=5.0 m BSC052N03LS RDS(on)=5.2 m BSC057N03LS G RDS(on)=5.7 m IRFH8330TRPBF RDS(on)=6.6 m BSC080N03LS G RDS(on)=8.0 m IRFH8334TRPBF RDS(on)=9.0 m BSC090N03LS G RDS(on)=9.0 m BSC0909NS RDS(on)=9.2 m SO-8 Discrete IGBTs IRF8306MTRPBF** RDS(on)=2.5 m BSZ0901NSI** RDS(on)=2.1 m IRLHM620TRPBF RDS(on)=2.5 m BSZ0902NS RDS(on)=2.6 m SuperSO8 Power ICs IRF8304MTRPBF RDS(on)=2.2 m PQFN 3.3 x 3.3 Gate driver ICs IPC042N03L3**** RDS(on)=3.7 m DirectFETTM Motor control ICs Bare die (RDS(on) typ.) Microcontrollers RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 30V logic level 5 V optimized BSZ058N03MS G RDS(on) =5.8 m BSZ088N03MS G RDS(on) =8.8 m BSZ100N03MS G RDS(on) =10.0 m BSZ130N03MS G RDS(on) =13.0 m SO-8 Dual SOT-23 TSOP-6 BSO033N03MS G RDS(on) =3.3 m BSO040N03MS G RDS(on) =4.0 m WBG semiconductors BSZ035N03MS G RDS(on) =3.5 m BSZ050N03MS G RDS(on) =5.0 m 4-10 SO-8 BSC014N03MS G RDS(on) =1.4 m BSC016N03MS G RDS(on) =1.6 m BSC020N03MS G RDS(on) =2.0 m BSC025N03MS G RDS(on) =2.5 m BSC030N03MS G RDS(on) =3.0 m BSC042N03MS G RDS(on) =4.2 m BSC050N03MS G RDS(on) =5.0 m BSC057N03MS G RDS(on) =5.7 m BSC080N03MS G RDS(on) =8.0 m BSC090N03MS G RDS(on) =9.0 m BSC100N03MS G RDS(on) =10.0 m BSC120N03MS G RDS(on) =12.0 m 1-2 2-4 SuperSO8 500-950 V MOSFETs PQFN 3.3 x 3.3 BSO110N03MS G RDS(on) =11.0 m IRLML0030 RDS(on)=27 m IRLML6344 1) *** RDS(on)=29 m IRLML6346 1) *** RDS(on)=63 m IRLML2030 RDS(on)=100 m >10 IRLTS6342*** RDS(on)=14.6 m IRFTS8342 RDS(on)=19 m Discrete IGBTs RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs Applications Product portfolio 2 x 22 Power ICs BSO150N03MD G RDS(on) =15.0 m BSO220N03MD G RDS(on) =22.0 m 2 x 15 IRFR7440TRPBF RDS(on) =2.4 m IRFR7446TRPBF RDS(on) =3.9 m IRF40R207 RDS(on) =5.1 m IRFS7440TRLPBF RDS(on) =2.5 m IRF1404S RDS(on) =4.0 m TO-220 IRFB7430PBF RDS(on) =1.3 m IPP015N04N G RDS(on) =1.5 m IRFB7434PBF RDS(on) =1.6 m IRFB7437PBF RDS(on) =2.0 m IPP023N04N G RDS(on) =2.3 m IRFB7440PBF RDS(on) =2.5 m IRFB7446PBF RDS(on) =3.3 m IPP041N04N G RDS(on) =4.1 m IRF40B207 RDS(on) =4.5 m IPP048N04N G RDS(on)=4.8 m >10 www.infineon.com/powermosfet-12V-300V 1) 2.5 VGS capable *** RDS(on) max @ VGS=4.5 V 78 TO-247 IRFP7430PBF RDS(on) =1.3 m Bare die (RDS(on) typ.) IPC218N04N3 RDS(on) =0.9 m IPC171N04N RDS(on) =1.1 m DirectFETTM PQFN 3.3 x 3.3 IRF7739L1TRPBF RDS(on) =1.0 m IRF7480MTRPBF RDS(on) =1.2 m IRF7946TRPBF RDS(on) =1.4 m BSB015N04NX3 G RDS(on) =1.5 m IRF40DM229 RDS(on)=1.85 m IRF7483MTRPBF RDS(on) =2.3 m SuperSO8 TO-220 FullPAK IRFH7084TRPBF RDS(on) =1.25 m IRFH7004TRPBF RDS(on) =1.4 m BSC017N04NS G RDS(on) =1.7 m IRF40H210 RDS(on) =1.7 m BSC019N04NS G RDS(on) =1.9 m IRFH7440TRPBF RDS(on) =2.4 m BSC030N04NS G RDS(on) =3.0 m IRFH7446TRPBF RDS(on) =3.3 m BSC054N04NS G IPA041N04N G RDS(on)=5.4 m RDS(on)=4.1 m BSZ105N04NS G RDS(on) =10.5 m BSZ165N04NS G RDS(on) =16.5 m Motor control ICs 1-2 4-10 TO-263 (D2PAK 7-pin) IRFS7430TRL7PP RDS(on) =0.75 m IRFS7430TRLPBF IRFS7434TRL7PP RDS(on) =1.3 m RDS(on) =1.0 m IPB011N04N G IPB015N04N G RDS(on) =1.1 m RDS(on) =1.5 m IRFS3004-7P IRFS3004 RDS(on) =1.25 m RDS(on) =1.75 m IRFS7434TRLPBF IRFS7437TRL7PP RDS(on) =1.4 m RDS(on) =1.6 m IRFS7437TRLPBF IPB020N04N G RDS(on) =2.0 m RDS(on) =1.8 m <1 2-4 TO-263 (D2PAK) Microcontrollers TO-252 (DPAK) XENSIVTM sensors RDS(on), max. @VGS=10V [m] Packages OptiMOSTM and StrongIRFETTM 40V normal level Gate driver ICs w Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors w OptiMOSTM and StrongIRFETTM 40V logic level IRLP3034PBF RDS(on) =1.7 m PQFN 3.3 x 3.3 IRL7472L1TRPBF RDS(on) =0.45 m BSC007N04LS6 RDS(on)=0.7 m BSB014N04LX3 G RDS(on) =1.4 m IRL7486MTRPBF RDS(on) =1.4 m BSC010N04LS RDS(on) =1.0 m BSC010N04LS6 RDS(on) =1.0 m BSC010N04LST RDS(on)=1.0 m BSC010N04LSI RDS(on) =1.05 m BSC010N04LSC * RDS(on)= 1.05 m BSC014N04LST RDS(on) =1.4 m BSC014N04LS RDS(on) =1.4 m BSC014N04LSI RDS(on) =1.45 m BSC016N04LS G RDS(on) =1.6 m BSC018N04LS G RDS(on) =1.8 m BSC019N04LS RDS(on) =1.9 m BSC019N04LST RDS(on) =1.9 m BSC022N04LS RDS(on) =2.2 m BSC022N04LS6 RDS(on) =2.2 m BSC026N04LS RDS(on) =2.6 m BSC027N04LS G RDS(on) =2.7 m BSC032N04LS RDS(on) =3.2 m BSC035N04LS G RDS(on) =3.5 m BSC050N04LS G RDS(on) =5.0 m BSC059N04LS G RDS(on) =5.9 m BSC059N04LS6 RDS(on) =5.9 m BSC093N04LS G RDS(on) =9.3 m 1-2 BSZ018N04LS6 RDS(on)=1.8 m IRL40B215 RDS(on) =2.7 m IPP039N04L G RDS(on) =3.9 m 2-4 IRL1404S IPD036N04L G RDS(on) =4.0 m RDS(on)=3.6 m IRLR31142TRPBF RDS(on) =4.5 m 4-10 BSZ021N04LS6 RDS(on) =2.1 m BSZ024N04LS6 RDS(on) =2.4 m BSZ025N04LS RDS(on) =2.5 m BSZ028N04LS RDS(on) =2.8 m BSZ034N04LS RDS(on) =3.4 m BSZ040N04LS G RDS(on) =4.0 m BSZ063N04LS6 RDS(on) =6.3 m BSZ097N04LS G RDS(on) =9.7 m www.infineon.com/powermosfet-12V-300V 3) Coming soon * Increased creepage distance 79 SuperSO8 TO-Leadless IRL40T209 RDS(on)= 0.8 m Discrete IGBTs DirectFETTM Power ICs IRL40B209 RDS(on) =1.25 m IRLB3034PBF RDS(on) =1.7 m IRL40B212 RDS(on) =1.9 m TO-247 Gate driver ICs IRL40SC228 RDS(on) =0.65 m IRL40SC209 RDS(on) =0.8 m IPB011N04L G IPB015N04L G RDS(on) =1.1 m RDS(on) =1.5 m IRLS3034TRLPBF IRLS3034TRL7P RDS(on) =1.4 m RDS(on) =1.7 m IRL40S212 RDS(on) =1.9 m <1 TO-220 Motor control ICs TO-263 (D2PAK 7-pin) Microcontrollers TO-263 (D2PAK) XENSIVTM sensors TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] IPD025N06N 2) RDS(on) =2.5 m 2-4 IPD033N06N 2) RDS(on)=3.3 m IPD034N06N3 G RDS(on) =3.4 m IPD038N06N3 G RDS(on) =3.8 m IRFR7540TRPBF RDS(on) =4.8 m IPD053N06N 2) RDS(on) =5.3 m 4-10 IPB090N06N3 G RDS(on) =9.0 m IRFS3806 RDS(on) =15.8 m IPI020N06N 2) RDS(on) =2.0 m IPI024N06N3 G RDS(on) =2.4 m IPI029N06N 2) RDS(on) =2.9 m IPI032N06N3 G RDS(on) =3.2 m IPI040N06N3 G RDS(on) =4.0 m TO-220 IRFB7530PBF RDS(on) =2.0 m IPP020N06N 2) RDS(on) =2.0 m IRFB7534PBF RDS(on) =2.4 m IPP024N06N3 G 2) RDS(on) =2.4 m IPP029N06N 2) RDS(on) =2.9 m IPP032N06N3 G RDS(on) =3.2 m IRFB7537PBF RDS(on) =3.3 m IPP040N06N3 G RDS(on) =4.0 m IPP040N06N 2) RDS(on) =4.0 m IRFB7540PBF RDS(on) =5.1 m IPP057N06N3 G 2) RDS(on) =5.7 m IRFB7545PBF RDS(on) =5.9 m IPP060N06N 2) RDS(on) =6.0 m IRF60B217 RDS(on) =9.0 m IPP093N06N3 G RDS(on) =9.3 m TO-220 FullPAK TO-247 IRFP7530PBF RDS(on) =2.0 m IPA029N06N 2) RDS(on) =2.9 m IPA032N06N3 G RDS(on) =3.2 m IRFP3006PBF RDS(on) =2.5 m IRFP3206PBF RDS(on) =3.0 m IRFP7537PBF RDS(on) =3.3 m IPA040N06N 2) RDS(on) =4.0 m IPA057N06N3 G RDS(on) =5.7 m IPA060N06N 2) RDS(on) =6.0 m IPA093N06N3 G RDS(on) =9.3 m www.infineon.com/powermosfet-12V-300V 2) 6 V rated (RDS(on) also specified @ VGS=6 V) 80 Packages XENSIVTM sensors Microcontrollers Motor control ICs >10 IRFR7546TRPBF RDS(on) =7.9 m IPD088N06N3 G RDS(on)=8.8 m IRF60R217 RDS(on) =9.9 m IRFS7530TRLPBF RDS(on) =2.0 m IRFS7534TRLPBF RDS(on) =2.4 m IRFS3006 RDS(on) =2.5 m IPB026N06N 2) RDS(on) =2.6 m IPB029N06N3 G RDS(on) =2.9 m IRFS3206 RDS(on)=3.0 m IRFS7537TRLPBF RDS(on) =3.3 m IPB037N06N3 G RDS(on) =3.7 m IRFS3306 RDS(on) =4.2 m IRFS7540TRLPBF RDS(on) =5.1 m IPB054N06N3 G RDS(on)=5.4 m IPB057N06N 2) RDS(on) =5.7 m IRF1018ES RDS(on)=8.4 m IPB010N06N 2) RDS(on) =1.0 m IRFS7530TRL7PP RDS(on) =1.4 m IPB014N06N 2) RDS(on) =1.4 m IPB017N06N3 G RDS(on) =1.7 m IRFS7534TRL7PP RDS(on) =1.95 m IRFS3006TRL7PP RDS(on) =2.1 m TO-262 (I2PAK) 500-950 V MOSFETs 1-2 TO-263 (D2PAK 7-pin) WBG semiconductors TO-263 (D2PAK) Discrete IGBTs TO-252 (DPAK) Power ICs RDS(on), max. @VGS=10V [m] Gate driver ICs OptiMOSTM and StrongIRFETTM 60V normal level 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 60V normal level SuperSO8 <1 IPC218N06N3 RDS(on) =1.3 m IRF7749L1TRPBF RDS(on) =1.5 m BSC012N06NS RDS(on) =1.2 m BSC014N06NS 2) RDS(on) =1.4 m BSC014N06NST 2) RDS(on) =1.45 m BSC016N06NST 2) RDS(on) =1.6 m BSC016N06NS 2) RDS(on) =1.6 m BSC019N06NS 2) RDS(on) =1.9 m BSC028N06NS 2) RDS(on) =2.8 m BSC028N06NST 2) RDS(on) =2.8 m BSC031N06NS3 G RDS(on) =3.1 m IRFH7085TRPBF RDS(on) =3.2 m BSC034N06NS 2) RDS(on) =3.4 m BSC039N06NS 2) RDS(on) =3.9 m IRLH5036TRPBF RDS(on) =4.4 m IRFH7545TRPBF RDS(on) =5.2 m BSC066N06NS 2) RDS(on) =6.6 m BSC076N06NS3 G RDS(on) =7.6 m BSC097N06NS 2) RDS(on) =9.7 m BSC097N06NST 2) RDS(on)=9.7 m BSC110N06NS3 G RDS(on) =11.0 m 1-2 IRF7748L1TRPBF RDS(on) =2.2 m BSB028N06NN3 G RDS(on) =2.8 m IRF60DM206 RDS(on) =2.9 m 2-4 IRF7580MTRPBF RDS(on) =3.6 m IRF6648 RDS(on) =7.0 m IRF6674 RDS(on) =11.0 m BSZ042N06NS 2) RDS(on) =4.2 m BSZ068N06NS 2) RDS(on) =6.8 m 4-10 BSZ100N06NS 2) RDS(on) =10.0 m BSZ110N06NS3 G RDS(on) =11.0 m IPT007N06N 2) RDS(on) =0.7 m IPT012N06N 2) RDS(on) =1.2 m Gate driver ICs >10 TO-Leadless 500-950 V MOSFETs PQFN 3.3 x 3.3 WBG semiconductors DirectFETTM Discrete IGBTs Bare die (RDS(on) typ.) Power ICs RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs Applications Product portfolio 2-4 4-10 >10 IPD031N06L3 G RDS(on) =3.1 m IPD048N06L3 G RDS(on) =4.8 m IRLR3636TRPBF RDS(on) =6.8 m IPD079N06L3 G RDS(on) =7.9 m TO-263 (D2PAK 7-pin) IPB019N06L3 G IPB016N06L3 G RDS(on) =1.9 m RDS(on) =1.6 m IRL60S216 RDS(on) =1.95 m IRLS3036TRLPBF RDS(on) =2.4 m IPB034N06L3 G RDS(on) =3.4 m IPB081N06L3 G RDS(on) =8.1 m TO-262 (I2PAK) IRL60SL216 RDS(on) =1.95 m IRL60B216 RDS(on) =1.9 m IRLB3036PBF RDS(on) =2.4 m IPP037N06L3 G RDS(on) =3.7 m IPP052N06L3 G RDS(on) =5.2 m IPI084N06L3 G RDS(on) =8.4 m IPP084N06L3 G RDS(on) =8.4 m IPD350N06L G RDS(on) =35.0 m www.infineon.com/powermosfet-12V-300V 2) 6 V rated (RDS(on) also specified @ VGS = 6 V) 3) Coming soon 81 TO-220 Bare die (RDS(on) typ.) PQFN 2 x 2 IPC218N06L3 RDS(on) =1.2 m PQFN 3.3 x 3.3 SuperSO8 SOT-23 BSC014N06LS5 RDS(on) = 1.4 m IRL60HS118 RDS(on)=17.0 m BSC027N06LS5 RDS(on) =2.7 m BSC028N06LS3 G RDS(on) =2.8 m BSZ040N06LS5 IRLH5036TRPBF RDS(on) =4.0 m RDS(on) =4.4 m BSZ065N06LS5 BSC065N06LS5 RDS(on) =6.5 m RDS(on)=6.5 m BSZ067N06LS3 G BSC067N06LS3 G RDS(on) =6.7 m RDS(on) =6.7 m BSZ099N06LS5 BSC094N06LS5 RDS(on) =9.4 m RDS(on) =9.9 m BSZ100N06LS3 G BSC100N06LS3 G RDS(on) =10.0 m RDS(on) =10.0 m Microcontrollers 1-2 TO-263 (D2PAK) IRLML0060 RDS(on)=92 m IRLML2060 RDS(on)=480 m XENSIVTM sensors TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] Motor control ICs OptiMOSTM and StrongIRFETTM 60V logic level IPB049NE7N3 G RDS(on) =4.9 m IRFS7762TRLPBF RDS(on) =6.7 m IRFR7740TRPBF RDS(on) =7.2 m IRFS7787TRLPBF RDS(on) =8.4 m >10 IRFR7746TRPBF RDS(on) =11.2 m IPC302NE7N3 RDS(on) =1.2 m IPP023NE7N3 G RDS(on) =2.3 m IRFB7730PBF RDS(on) =2.6 m IPP034NE7N3 G RDS(on) =3.4 m IRFB7734PBF RDS(on) =3.5 m IPP052NE7N3 G RDS(on) =5.2 m IPP062NE7N3 G RDS(on) =6.2 m IRFB7740PBF RDS(on) =7.3 m IRFB7787PBF RDS(on) =8.4 m IRFB7746PBF RDS(on) =10.6 m SuperSO8 BSC036NE7NS3 G RDS(on) =3.6 m BSC042NE7NS3 G RDS(on) =4.2 m IRF7780MTRPBF RDS(on) =5.7 m IRFH7787TRPBF RDS(on) =8.0 m BSF450NE7NH3 1) RDS(on) =45.0 m OptiMOSTM and StrongIRFETTM 80V normal level - logic level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) 1-2 2-4 TO-263 (DPAK) TO-263 (DPAK 7-pin) TO-262 (I2PAK) TO-220 TO-220 FullPAK Bare die (RDS(on) typ.) DirectFETTM PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 IPB017N08N5 IPB015N08N5 IPC302N08N3 RDS(on) =1.7 m RDS(on) =1.5 m RDS(on) =1.2 m IPB020N08N5 IPB019N08N3 G IPP020N08N5 BSC021N08NS5 RDS(on) =2.0 m RDS(on) =1.9 m RDS(on) =1.2 m RDS(on) =2.0 m RDS(on) =2.1 m IPP023N08N5 BSC025N08LS5 RDS(on) =2.4 m RDS(on) =2.3 m RDS(on) =2.5 m BSC026N08NS5 IPB030N08N3 G IPP027N08N5 RDS(on) =2.5 m RDS(on) =3.0 m RDS(on) =2.7 m RDS(on) =2.6 m IPP028N08N3 G IPA028N08N3 G BSC030N08NS5 IPT029N08N5 RDS(on) =2.8 m RDS(on) =2.8 m RDS(on) =3.0 m RDS(on) =2.9 m IPB031N08N5 IPP034N08N5 BSC037N08NS5 RDS(on) =3.1 m RDS(on) =3.4 m RDS(on) =3.7 m BSC037N08NS5T RDS(on)= 3.7 m IPI037N08N3 G IPP037N08N3 G IPA037N08N3 G RDS(on) =3.5 m RDS(on) =3.7 m RDS(on) =3.7 m RDS(on) =3.7 m IPP052N08N5 RDS(on)=4.6 m RDS(on) =4.9 m RDS(on) =5.2 m IPD053N08N3 G IPB054N08N3 G IPP057N08N3 G IPA057N08N3 G RDS(on) =5.3 m RDS(on) =5.4 m RDS(on) =5.7 m RDS(on) =5.7 m 4-10 >10 IPB035N08N3 G IPB049N08N5 IPD046N08N5 BSC040N08NS5 RDS(on) =4.0 m BSB044N08NN3 G BSC047N08NS3 G RDS(on) =4.4 m RDS(on) =4.7 m BSC052N08NS5 RDS(on) =5.2 m IPB067N08N3 G BSZ070N08LS5 BSC057N08NS3 G RDS(on) =6.7 m RDS(on) =7.0 m RDS(on) =5.7 m BSZ075N08NS5 BSC061N08NS5 RDS(on) =7.5 m RDS(on) =6.1 m IPD096N08N3 G IPP100N08N3 G BSZ084N08NS5 BSC072N08NS5 RDS(on) =9.6 m RDS(on) =9.7 m RDS(on) =8.4 m RDS(on) =7.2 m BSB104N08NP3 IRL80HS120 BSZ110N08NS5 BSC117N08NS5 RDS(on) =10.4 m RDS(on)=32.0 m RDS(on) =11.0 m RDS(on) =11.7 m IPD135N08N3 G BSZ123N08NS3 G BSC123N08NS3 RDS(on) =13.5 m RDS(on) =12.3 m RDS(on) =12.3 m BSZ340N08NS3 G BSC340N08NS3 G RDS(on) =34.0 m www.infineon.com/powermosfet-12V-300V 1) DirectFETTM S 82 TO-Leadless IPT012N08N5 IPB024N08N5 IPB025N08N3 G 500-950 V MOSFETs IRFP7718PBF RDS(on) =1.8 m DirectFETTM Discrete IGBTs IRFS7734TRL7PP RDS(on) =3.05 m Bare die (RDS(on) typ.) Power ICs 4-10 IRFS7730TRL7PP RDS(on) =2.0 m TO-247 Gate driver ICs 2-4 TO-220 Motor control ICs IPB020NE7N3 G RDS(on) =2.0 m IRFS7730TRLPBF RDS(on) =2.6 m IPB031NE7N3 G RDS(on) =3.1 m IRFS7734TRLPBF RDS(on) =3.5 m 1-2 TO-263 (DPAK 7-pin) RDS(on) =34.0 m Microcontrollers TO-263 (DPAK) XENSIVTM sensors TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] WBG semiconductors OptiMOSTM and StrongIRFETTM 75 V normal level 20-300 V MOSFETs Applications Product portfolio 2-4 IPD050N10N5 RDS(on)=5.0 m IPD068N10N3 G RDS(on) =6.8 m 4-10 IPB017N10N5 RDS(on) =1.7 m IPB017N10N5LF RDS(on)=1.7 m IPB024N10N5 RDS(on) =2.4 m IPB025N10N3 G RDS(on) =2.5 m IPB032N10N5 RDS(on) =3.2 m IPB039N10N3 G RDS(on) =3.9 m IPB042N10N3 G RDS(on) =4.2 m IRFS4010TRLPBF RDS(on) =4.7 m IPB065N10N3 G RDS(on)=6.5 m IRFS4310ZTRLPBF RDS(on) =7.0 m TO-262 (I2PAK) IPI030N10N3 G RDS(on) =3.0 m IPI045N10N3 G RDS(on) =4.5 m IPI072N10N3 G RDS(on) =7.2 m IPD082N10N3 G RDS(on) =8.2 m IPB083N10N3 G RDS(on) =8.3 m IRFS4410ZTRLPBF RDS(on) =9.0 m 10-25 IPB123N10N3 G RDS(on) =12.3 m IRFS4510TRLPBF RDS(on) =13.9 m IPI180N10N3 G RDS(on) =18.0 m IPP023N10N5 RDS(on) =2.3 m IPP030N10N3 G RDS(on) =3.0 m IPP030N10N5 RDS(on)=3.0 m IPP039N10N5 RDS(on)=3.9 m IRFB4110PBF RDS(on) =4.5 m IPP045N10N3 G RDS(on) =4.5 m IRFB4310ZPBF RDS(on) =6.0 m IPP072N10N3 G RDS(on) =7.2 m IPP083N10N5 RDS(on) =8.3 m IPP086N10N3 G RDS(on) =8.6 m IRFS4410ZTRLPBF RDS(on) =9.0 m TO-220 FullPAK TO-247 IRF100P218 RDS(on)=1.1 m IRF100P219 RDS(on)=2.1 m IRFP4468PBF RDS(on) =2.6 m IPA030N10N3 G RDS(on) =3.0 m IPA045N10N3 G RDS(on) =4.5 m IPA083N10N5 RDS(on) =8.3 m IPA086N10N3 G RDS(on) =8.6 m IRFP4110PBF RDS(on) =4.5 m IRFP4310ZPBF RDS(on) =6.0 m IRFP4410ZPBF RDS(on) =9.0 m www.infineon.com/powermosfet-12V-300V 83 Packages XENSIVTM sensors Microcontrollers Motor control ICs >25 IPD122N10N3 G RDS(on) =12.2 m IPD12CN10N G RDS(on)=12.4 m IRFR4510TRPBF RDS(on) =13.9 m IPD180N10N3 G RDS(on) =18.0 m IPD25CN10N G RDS(on) =25.0 m IPD33CN10N G RDS(on) =33.0 m IPD78CN10N G RDS(on) =78.0 m IPI086N10N3 G RDS(on) =8.6 m TO-220 500-950 V MOSFETs IPB020N10N5 RDS(on) =2.0 m IPB020N10N5LF RDS(on)=2.0 m IPB027N10N3 G RDS(on) =2.7 m IPB027N10N5 RDS(on) =2.7 m IPB033N10N5LF RDS(on) =3.3 m 1-2 TO-263 (DPAK 7-pin) Discrete IGBTs TO-263 (DPAK) Power ICs TO-252 (DPAK) Gate driver ICs RDS(on), max. @VGS=10V [m] WBG semiconductors OptiMOSTM and StrongIRFETTM 100V normal level 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 100V normal level 4-10 BSZ097N10NS5 RDS(on) =9.7 m BSF134N10NJ3 G 1) RDS(on) =13.4 m 10-25 BSZ160N10NS3 G RDS(on) =16.0 m IPC045N10N3 RDS(on)=15.2 m IRF6662TRPBF RDS(on) =22.0 m IRF6645TRPBF RDS(on) =35.0 m IRF7665S2TRPBF RDS(on) =62.0 m >25 BSZ440N10NS3 G RDS(on) =44.0 m 2 x 75 TO-Leadless 500-950 V MOSFETs IPT015N10N5 RDS(on) =1.5 m IPT020N10N3 RDS(on) =2.0 m WBG semiconductors IRF100DM116 3) RDS(on)=4.3 m BSB056N10NN3 G RDS(on) =5.6 m BSC027N10NS5 RDS(on) =2.7 m BSC035N10NS5 RDS(on) =3.5 m BSC040N10NS5 RDS(on) =4.0 m BSC050N10N5 RDS(on) =5.0 m BSC060N10NS3 G RDS(on) =6.0 m BSC070N10NS3 G RDS(on) =7.0 m BSC070N10NS5 RDS(on) =7.0 m IRFH5010TRPBF RDS(on) =9.0 m BSC098N10NS5 RDS(on) =9.8 m BSC109N10NS3 G RDS(on) =10.9 m BSC118N10NS G RDS(on) =11.8 m IRFH7110TRPBF RDS(on) =13.5 m BSC160N10NS3 G RDS(on) =16.0 m BSC196N10NS G RDS(on) =19.6 m BSC252N10NSF G RDS(on)=25.2 m BSC440N10NS3 G RDS(on) =44.0 m BSC750N10ND G RDS(on) =75.0 m; dual SO-8 Discrete IGBTs IRF7769L1TRPBF RDS(on) =3.5 m SuperSO8 Power ICs PQFN 3.3 x 3.3 IRF7853TRPBF RDS(on) =18.0 m Gate driver ICs 2-4 IPC302N10N3 RDS(on) =1.7 m IPC313N10N3R RDS(on) =1.9 m IPC26N10NR RDS(on) =3.2 m IPC173N10N3 RDS(on) =3.6 m DirectFETTM IRFHM792TRPBF RDS(on) =195.0 m 2 x 195 OptiMOSTM and StrongIRFETTM 100V logic level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) TO-263 (D2PAK) TO-220 Bare die (RDS(on) typ.) PQFN 2 x 2 PQFN 3.3 x 3.3 IRLS4030TRL7PP RDS(on) =3.9 m 2-4 IRLS4030TRLPBF RDS(on) =4.3 m 4-10 10-25 TO-263 (DPAK 7-pin) SOT-23 BSC034N10LS5 RDS(on) =3.4 m IRLB4030PBF RDS(on) =4.3 m IPP12CN10L G RDS(on) =12.0 m BSZ096N10LS5 RDS(on) =9.6 m BSZ146N10LS5 RDS(on) =14.6 m BSZ150N10LS3 RDS(on) =15.0 m IPC045N10L32) RDS(on)= 16.0 m IRLR3110ZTRPBF RDS(on) =14.0 m IPC020N10L3 2) RDS(on) =42.0 m IRL100HS121 RDS(on)=42.0 m BSC123N10LS G RDS(on) =12.3 m BSC146N10LS5 RDS(on) =14.6 m BSC265N10LSF G IRLML0100 RDS(on) =26.5 m RDS(on)=220 m www.infineon.com/powermosfet-12V-300V 84 1) DirectFETTM S 2) RDS(on) typ. specified @ 4.5 V 3) Coming soon Packages XENSIVTM sensors >25 SuperSO8 Motor control ICs 1-2 Bare die (RDS(on) typ.) Microcontrollers RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs Applications Product portfolio Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 120V normal level TO-263 (D2PAK) TO-263 (DPAK 7-pin) TO-262 (I2PAK) TO-220 IPB036N12N3 G RDS(on) =3.6 m IPI041N12N3 G RDS(on) =4.1 m 4-10 IPI076N12N3 G RDS(on) =7.6 m IPD110N12N3 G RDS(on) =11.0 m IPB144N12N3 G RDS(on) =14.4 m SuperSO8 IPI147N12N3 G RDS(on) =14.7 m IPP041N12N3 G RDS(on) =4.1 m IPP048N12N3 G RDS(on) =4.8 m IPP076N12N3 G RDS(on) =7.6 m IPP114N12N3 G RDS(on) =11.4 m IPP147N12N3 G RDS(on) =14.7 m BSC077N12NS3 G RDS(on) =7.7 m BSZ240N12NS3 G RDS(on) =24.0 m BSC190N12NS3 G RDS(on) =19.0 m www.infineon.com/powermosfet-12V-300V 85 Packages XENSIVTM sensors Microcontrollers 10-25 PQFN 3.3 x 3.3 IPC302N12N3 RDS(on) =2.5 m IPC26N12N RDS(on) =3.0 m IPC26N12NR RDS(on)=3.2 m 2-4 IPB038N12N3 G RDS(on) =3.8 m Bare die (RDS(on) typ.) Gate driver ICs TO-252 (DPAK) Motor control ICs RDS(on), max. @VGS=10V [m] OptiMOSTM and StrongIRFETTM 135-150 V normal level DirectFETTM PQFN 3.3 x 3.3 IPC302N15N3 RDS(on) =4.9 m IPC300N15N3R RDS(on) =4.9 m SuperSO8 BSC093N15NS5 RDS(on) =9.3 m IRF7779L2TRPBF 5) RDS(on) =11.0 m 10-25 BSB165N15NZ3 G RDS(on) =16.5 m BSB280N15NZ3 G RDS(on) =28.0 m IRF6643TRPBF RDS(on) =34.5 m IRF6775MTRPBF RDS(on) =56.0 m IPT059N15N3 RDS(on) = 5.9 m BSC110N15NS5 RDS(on) =11.0 m BSC160N15NS5 RDS(on) =16.0 m BSC190N15NS3 G RDS(on) =19.0 m BSC360N15NS3 G RDS(on) =36.0 m BSC520N15NS3 G RDS(on) =52.0 m Discrete IGBTs >25 BSZ300N15NS5 RDS(on) =30.0 m BSZ520N15NS3 G RDS(on) =52.0 m BSZ900N15NS3 G RDS(on) =90.0 m TO-Leadless 500-950 V MOSFETs 4-10 Bare die (RDS(on) typ.) WBG semiconductors RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs Applications Product portfolio IRFR4615 RDS(on) =42.0 m IPD530N15N3 G RDS(on) =53.0 m IRFS4615PBF RDS(on) =42.0 m IRFS5615PBF RDS(on) =42.0 m IPB530N15N3 G RDS(on) =53.0 m 4-10 10-25 >25 86 TO-262 (I2PAK) TO-220 IPI051N15N5 RDS(on)=5.1 m IPP051N15N5 2) RDS(on)=5.1 m IPI075N15N3 G RDS(on) =7.5 m IPI076N15N5 RDS(on)=7.6 m IPP075N15N3 G RDS(on) =7.5 m IPP076N15N5 RDS(on)=7.6 m TO-220 FullPAK IPI111N15N3 G RDS(on) =11.1 m IRFU4615PBF RDS(on) =42.0 m IPI530N15N3 G 2) RDS(on) =53.0 m IRF135B203 5) RDS(on) =8.4 m IPP111N15N3 G RDS(on) =11.1 m IRFB4321PBF RDS(on) =15.0 m IPP200N15N3 G 2) RDS(on) =20.0 m IRFB4615PBF RDS(on) =39.0 m IRFB5615PBF RDS(on) =39.0 m IPP530N15N3 G 2) RDS(on) =53.0 m IRFB4019PBF RDS(on) =95.0 m TO-247 IRF150P220 RDS(on)=2.5m IRF150P221 RDS(on)=4.8m IRFP4568PBF RDS(on) =5.9 m IRF135SA204 RDS(on)=5.9 m IRFS4115TRL7PP RDS(on) =11.8 m IRFS4321TRL7PP RDS(on) =14.7 m www.infineon.com/powermosfet-12V-300V 2) 8 V rated (RDS(on) also specified @ VGS = 8 V) 3) In development 5) 135 V TO-251/ TO-251 Short Lead (IPAK/IPAK Short Lead) IPA075N15N3 G RDS(on) =7.5 m IPA105N15N3 G RDS(on) =10.5 m IRFP4321PBF RDS(on) =15.5 m Gate driver ICs IPB044N15N5 RDS(on)=4.4 m IRF135SA204 5) RDS(on) =5.9 m IPB060N15N5 RDS(on)= 6.0 m IPB065N15N3 G RDS(on) =6.5 m IPD200N15N3 G RDS(on) =20.0 m IPB048N15N5 RDS(on)=4.8 m IPB048N15N5LF RDS(on)=4.8 m IPB072N15N3 G RDS(on) =7.2 m IPB073N15N5 RDS(on)=7.3 m IPB083N15N5LF RDS(on)=8.3 m IRF135S203 5) RDS(on) =8.4 m IPB108N15N3 G RDS(on) =10.8 m IRFS4321 RDS(on) =15.0 m IPB200N15N3 G RDS(on) =20.0 m TO-263 (DPAK 7-pin+) Motor control ICs TO-263 (DPAK 7-pin) Microcontrollers TO-263 (D2PAK) XENSIVTM sensors TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] Power ICs OptiMOSTM and StrongIRFETTM 135-150 V normal level TO-220 IPP110N20N3 G RDS(on) =11.0 m IRF200P222 RDS(on)=6.6 m IRFP4668PBF RDS(on) =9.7 m IRF200P223 RDS(on)=11.5 m IPP120N20NFD RDS(on) =12.0 m IRFB4127PBF RDS(on) =20.0 m IRFP4127PBF RDS(on) =21.0 m IRFP4227PBF RDS(on) =25.0 m 4-10 IPB107N20N3 G RDS(on) =10.7 m IPB107N20NA 4) RDS(on) =10.7 m IPB110N20N3LF RDS(on)=11.0 m IPB117N20NFD RDS(on) =11.7 m IPB156N22NFD 2) RDS(on) =15.6 m IRFS4127TRLPBF RDS(on) =22.0 m IRFS4227TRLPBF RDS(on) =26.0 m IPB320N20N3 G RDS(on) =32.0 m 10-25 IPD320N20N3 G RDS(on) =32.0 m IPI110N20N3 G RDS(on) =11.0 m IRFB4227PBF RDS(on) =26.0 m IPP320N20N3 G RDS(on) =32.0 m IRFB4620PBF RDS(on) =72.5 m IRFB5620PBF RDS(on) =72.5 m IRFB4020PBF RDS(on) =100.0 m IRF200B211 RDS(on) =170.0 m IPI320N20N3 G RDS(on) =32.0 m IRFS4620TRLPBF RDS(on) =78.0 m IRFS4020TRLPBF RDS(on) =105.0 m IRFR4620TRLPBF RDS(on) =78.0 m OptiMOSTM and StrongIRFETTM 200V normal level 10-25 >25 DirectFETTM PQFN 3.3 x 3.3 IPC300N20N3 RDS(on) =9.2 m IPC302N20N3 RDS(on) =9.2 m IPC302N20NFD RDS(on) = 9.4 m SO-8 TO-Leadless TO-247 IRF200P222 RDS(on)= 6.6 m IRF6641TRPBF RDS(on) =59.9 m IRF6785TRPBF RDS(on) =100.0 m BSZ900N20NS3 G RDS(on) =90.0 m BSZ12DN20NS3 G RDS(on) =125.0 m BSZ22DN20NS3 G RDS(on) =225.0 m www.infineon.com/powermosfet-12V-300V 87 SuperSO8 2) 220 V rated 3) In development 4) Part qualified according to AEC Q101 BSC220N20NSFD RDS(on)=22.0 m BSC320N20NS3 G RDS(on) =32.0 m BSC350N20NSFD RDS(on)=35.0 m BSC500N20NS3G RDS(on) =50.0 m IRFH5020 RDS(on) =55.0 m BSC900N20NS3 G RDS(on) =90.0 m BSC12DN20NS3 G RDS(on) =125.0 m BSC22DN20NS3 G RDS(on) =225.0 m IPT111N20NFD RDS(on)=11.1 m IRF7820TRPBF RDS(on) =78.0 m IRF200P223 RDS(on)= 11.5 m Motor control ICs 4-10 Bare die (RDS(on) typ.) Microcontrollers RDS(on), max. @VGS=10V [m] XENSIVTM sensors >25 IRF200S234 RDS(on)= 16.9 m TO-247 500-950 V MOSFETs TO-262 (I2PAK) Discrete IGBTs TO-263 (D2PAK+) Power ICs TO-263 (D2PAK) Gate driver ICs TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] WBG semiconductors OptiMOSTM and StrongIRFETTM 200V normal level 20-300 V MOSFETs Applications Product portfolio Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs 10-25 IRFS4229TRLPBF RDS(on) =48.0 m IPP200N25N3 G RDS(on) =20.0 m IPP220N25NFD RDS(on) =22.0 m TO-247 IRF250P224 RDS(on)=12.0 m IRFP4768PBF RDS(on) =17.5 m IRF250P225 RDS(on)=22.0 m IRFB4332PBF RDS(on) =33.0 m IRFP4332PBF RDS(on) =33.0 m IRFB4229PBF RDS(on) =46.0 m IPP600N25N3 G RDS(on) =60.0 m IRFP4229PBF RDS(on) =46.0 m Bare die (RDS(on) typ.) PQFN 3.3 x 3.3 IPC302N25N3 RDS(on)=16.0 m IPB600N25N3 G RDS(on) =60.0 m IPI600N25N3 G RDS(on) =60.0 m IPC045N25N3 RDS(on) =146.0 m TO-Leadless IPT210N25NFD RDS(on)=21.0 m >25 IPD600N25N3 G RDS(on) =60.0 m SuperSO8 BSZ16DN25NS3 G RDS(on) =165.0 m BSZ42DN25NS3 G RDS(on) =425.0 m BSC430N25NSFD RDS(on)=43.0 m BSC600N25NS3 G RDS(on) =60.0 m BSC670N25NSFD RDS(on)=67.0 m IRFH5025 RDS(on) =100.0 m BSC16DN25NS3 G RDS(on) =165.0 m OptiMOSTM and StrongIRFETTM 300V normal level RDS(on), max. @VGS=10V [m] TO-263 (D2PAK) TO-220 0-25 IPB407N30N RDS(on) =40.7 m IPP410N30N RDS(on) =41.0 m >25 IRFB4137PBF RDS(on) =69.0 m www.infineon.com/powermosfet-12V-300V 88 TO-247 IRF300P226 RDS(on)=19.0 m IRFP4868PBF RDS(on) =32.0 m IRF300P227 RDS(on)=40.0 m IRFP4137PBF RDS(on) =69.0 m SuperSO8 BSC13DN30NSFD RDS(on)=130.0 m Gate driver ICs IPI200N25N3 G RDS(on) =20.0 m TO-220 Motor control ICs IPB200N25N3 G RDS(on) =20.0 m TO-262 (I2PAK) Microcontrollers TO-263 (D2PAK) XENSIVTM sensors TO-252 (DPAK) Packages RDS(on), max. @VGS=10V [m] Power ICs OptiMOSTM and StrongIRFETTM 250V normal level Small signal P-channel P-channel MOSFETs -60 BSS192P 12 , -0.19 A, LL SC59 SOT-363 BSR316P 1.8 , -0.36 A, LL BSS84PW 8 , -0.15 A, LL WBG semiconductors ISS17EP06LM 1.7, -0.3 A, LL BSS83P 2 , -0.33 A, LL ISS55EP06LM 5.5 , -0.18 A, NL BSS84P 8 , -0.17 A, LL BSR315P 800 m, -0.62 A, LL BSS308PE 80 m, -2.1 A, LL, ESD BSS314PE 140 m, -1.5 A, LL, ESD BSS315P 150 m, -1.5 A, LL BSD314SPE 140 m, -1.5 A, LL, ESD Gate driver ICs BSL307SP 43 m, -5.5 A, LL BSL305SPE 45 m, -5.5 A, LL BSL308PE 80 m, -2.1 A, LL, dual, ESD BSL314PE 140 m, -1.5 A, LL, ESD, dual BSL207SP 41 m, -6 A, SLL BSL211SP 67 m, -4.7 A, SLL -20 SOT-323 BSR92P 11 , -0.14 A, LL BSL303SPE 33 m, -6.3 A, LL IRFTS9342TRPBF* 40 m, -5.8 A, LL - 30 SOT-23 500-950 V MOSFETs BSP317P 4 , -0.43 A, LL BSP92P 12 , -0.26 A, LL BSP321P 900 m, -0.98 A, NL BSP322P 800 m, -1.0 A, LL BSP316P 1.8 , -0.68 A, LL BSP612P 120 m, 3 A, LL BSP613P 130 m, 2.9 A, NL BSP170P 300 m, -1.9 A, NL BSP171P 300 m, -1.9 A, LL BSP315P 800 m, -1.17 A, LL ISP650P06NM 65 m, -3.7 A, NL ISP12DP06NM 125 m, -2.8, NL ISP25DP06LM 250 m, -1.9 A, LL SP25DP06NM 250 m, -1.9 A, NL SP75DP06LM 750 m, -1.1 A, LL SOT-89 Discrete IGBTs -100 TSOP-6 Power ICs -250 SOT-223 IRLML2244* 1) 54 m, 4.3 A, LL IRLML2246* 1) 135 m, 2.6 A, LL BSS215P 150 m, -1.5 A, SLL BSS209PW 550 m, -0.58 A, SLL BSS223PW 1.2 , -0.39 A, SLL BSV236SP 175 m, -1.5 A, SLL BSD223P 1.2 , -0.39 A, SLL, dual Motor control ICs Voltage [V] 20-300 V MOSFETs Applications Product portfolio -30/30 TSOP-6 SOT-89 BSL215C N: 140 m, 1.5 A, SLL P: 150 m, 1.5 A, SLL BSL308C N: 57 m, 2.3 A, LL P: 80 m, -2.0 A, LL BSL316C N: 160 m, 1.4 A, LL P: 150 m, -1.5 A, LL www.infineon.com/smallsignal All products are qualified to Automotive AEC Q101 (except the parts marked with *) 1) RDS(on) 4.5 V rated 89 SC59 SOT-23 SOT-323 SOT-363 BSD235C N: 350 m, 0.95 A, SLL P: 1.2 , 0.53 A, SLL XENSIVTM sensors -20/20 SOT-223 Packages Complementary Voltage [V] Microcontrollers Small signal complementary BSL214N 140 m, 1.5 A, SLL, dual BSS214N 140 m, 1.5 A, SLL BSS816NW 160 m, 1.4 A, ULL BSD840N 400 m, 0.88 A, ULL, dual IRLTS6342* 1) 17.5 m, 8.3 A, LL IRFTS8342* 19 m. 8.2 A, NL BSL302SN 25 m, 7.1 A, LL BSL306N 57 m, 2.3 A, LL, dual BSR302N 23 m, 3.7 A, LL 55 BSP318S 90 m, 2.6 A, LL BSP320S 120 m, 2.9 A, NL BSP295 300 m, 1.8 A, LL BSL606SN 60 m, 4.5 A, LL BSP716N 160 m, 2.3 A, LL BSL716SN 150 m, 2.5 A, LL BSP372N 230 m, 1.8 A, LL BSP373N 240 m, 1.8 A, NL BSL372SN 220 m, 2.0 A, LL BSL373SN 230 m, 2.0 A, NL BSP296N 600 m, 1.2 A, LL BSL296SN 460 m, 1.4 A, LL BSS606N 60 m, 3.2 A, LL BSR606N 60 m, 2.3 A, LL N-channel 60 IRFML8244* 24 m, 5.8 A, NL IRLML0030* 27 m, 5.3 A, LL IRLML6344* 1) 29 m, 5.0 A, LL BSS306N 57 m, 2.3 A, LL IRLML6346* 1) 63 m, 3.4 A, LL IRLML2030* 100 m, 1.4 A, LL BSS316N 160 m, 1.4 A, LL BSS670S2L 650 m, 0.54 A, LL IRLML0060* 92 m, 2.7 A, LL IRLML2060* 480 m, 1.2 A, LL BSS138N 3.5 , 0.23 A, LL BSS7728N 5 , 0.2 A, LL SN7002N 5 , 0.2 A, LL 2N7002 3 , 0.3 A, LL BSS159N 8 , 0.13 A, depl. 80 100 200 240 BSP297 1.8 , 0.66 A, LL BSP149 3.5 ,0.14 A, depl. BSP88 6 , 0.35 A, 2.8 V rated BSP89 6 , 0.35 A, LL BSP129 6 , 0.05 A, depl. IRLML0100* 220 m, 1.6 A, LL BSS119N 6 , 0.19 A, LL VGS(th) 1.8 V to 2.3 V BSS123N 6 , 0.19 A, LL VGS(th) 0.8 V to 1.8 V BSS169 12 , 0.09 A, depl. BSS87 6 , 0.26 A, LL 400 500 600 800 BSP298 3 , 0.5 A, NL BSP179 24 , 0.04 A, depl. BSP324 25 , 0.17 A, LL BSP299 4 , 0.4 A, NL BSP125 45 , 0.12 A, LL BSP135 60 , 0.02 A, depl. BSP300 20 , 0.19 A, NL BSS225 45 , 0.09 A, LL www.infineon.com/smallsignal All products are qualified to Automotive AEC Q101 (except 2N7002) (except the parts marked with *) 1) RDS(on) specified at 4.5 V 90 BSS340NW 400 m, 0.88 A, LL BSS138W 3.5 , 0.28 A, LL SN7002W 5 , 0.23 A, LL 2N7002DW 3 , 0.3 A, LL, dual BSS131 14 , 0.1 A, LL BSS139 30 , 0.03 A, depl. 250 BSD316SN 160 m, 1.4A, LL 500-950 V MOSFETs BSS214NW 140 m, 1.5 A, SLL WBG semiconductors BSL207N 70 m, 2.1 A, SLL, dual BSD214SN 140 m, 1.5 A, SLL BSD816SN 160 m, 1.4 A, ULL BSD235N 350 m, 0.95 A, SLL, dual 25 75 SOT-363 IRLML6244* 1) 21 m, 6.3 A, LL IRLML6246* 1) 46 m, 4.1 A, LL BSS205N 50 m, 2.5 A, SLL BSS806NE 57 m, 2.3 A, ULL, ESD BSS806N 57 m, 2.3 A, ULL 20 30 SOT-323 Discrete IGBTs BSR802N 23 m, 3.7 A, ULL BSR202N 21 m, 3.8 A, SLL SOT-23 Power ICs BSL802SN 22 m, 7.5 A, ULL BSL202SN 22 m, 7.5 A, SLL BSL205N 50 m, 2.5 A, SLL, dual SC59 Gate driver ICs SOT-89 BSS127 500 , 0.023 A, LL BSS126 700 , 0.007 A, depl. Microcontrollers TSOP-6 XENSIVTM sensors SOT-223 Packages Voltage [V] Motor control ICs Small signal N-channel 20-300 V MOSFETs Applications Product portfolio PQFN 3.3 x 3.3 SuperSO8 SO-8 BSO201SP H RDS(on) =7.0 m BSO203SP H RDS(on) =21.0 m BSO203P H RDS(on) =21.0 m -20 IRLML2244 2) *** RDS(on)=54 m IRLML2246 2) *** RDS(on)=135 m IPD042P03L3 G RDS(on) =4.2 m SPD50P03L G * RDS(on) =7.0 m BSZ086P03NS3 G RDS(on) =8.6 m BSZ086P03NS3E G RDS(on) =8.6 m IRF9395M RDS(on)=7.0 m; dual P-channel MOSFETs 1) BSZ120P03NS3 G RDS(on) =12.0 m BSZ120P03NS3E G RDS(on) =12.0 m; ESD -30 IRFHM9331 2) RDS(on)=15 m BSZ180P03NS3 G RDS(on) =18.0 m BSZ180P03NS3E G RDS(on) =18.0 m; ESD BSC084P03NS3 G RDS(on) =8.4 m BSC084P03NS3E G RDS(on) =8.4 m; ESD IRLHS2242TRPBF** RDS(on) =31.0 m TSOP-6 IRLTS2242 RDS(on)=39 m IRFH9301TRPBF RDS(on) =37.0 m IRFHS9351TRPBF IRFTS9342*** RDS(on) =170.0 m; dual RDS(on)=32 m www.infineon.com/pchannel 1) 5-leg 2) 2.5 VGS capable 91 * Products are qualified to Automotive AEC Q101 **RDS(on) specified at 4.5 V *** RDS(on) max. @ VGS=4.5 V Packages XENSIVTM sensors Microcontrollers Motor control ICs IRLML9301TRPBF RDS(on)=64 m IRLML9303TRPBF RDS(on)=165 m BSC030P03NS3 G RDS(on) =3.0 m BSC060P03NS3E G RDS(on) =6.0 m; ESD BSO207P H RDS(on) =45.0 m BSO211P H RDS(on) =67.0 m IRF9310 RDS(on)=4.6 m IRF9317 RDS(on)=6.6 m IRF9321 RDS(on)=7.2 m BSO080P03NS 3 G RDS(on) =8.0 m BSO080P03NS3E G RDS(on) =8.0 m; ESD BSO080P03S H RDS(on) =8.0 m BSO301SP H RDS(on) =8.0 m IRF9328 RDS(on)=11.9 m IRF9388TRPBF RDS(on)=11.9 m BSO130P03S H RDS(on) =13.0 m IRF9358 RDS(on)=16 m; dual IRF9332 RDS(on)=17.5 m IRF9392TRPBF RDS(on)= 17.5 m IRF9333 RDS(on)=19.4 m BSO200P03S H RDS(on) =20.0 m BSO303SP H RDS(on) =21.0 m BSO303P H RDS(on) =21.0 m; dual IRF9362 RDS(on)=21 m; dual IRF9335 RDS(on)=59 m PQFN 2 x 2 WBG semiconductors SOT-23 Discrete IGBTs DirectFETTM Power ICs TO-252 (DPAK) Gate driver ICs Voltage [V] 500-950 V MOSFETs Power P-channel MOSFETs 20-300 V MOSFETs Applications Product portfolio Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors SPB18P06P G* RDS(on) =130.0 m SPP18P06P H* RDS(on) =130.0 m SPB08P06P G* RDS(on) =300.0 m SPP08P06P H* RDS(on) =300.0 m SO-8 BSO613SPV G* RDS(on) =130.0 m SPP15P10PL H* RDS(on) =200.0 m SPP15P10P H* RDS(on) =240.0 m -100 SPD04P10PL G* RDS(on) =850.0 m SPD04P10P G* RDS(on) =1000.0 m Power MOSFETs complementary Complementary Voltage [V] -20/20 -60/60 TO-252 (DPAK) >50 m 11-30 www.infineon.com/complementary *Products are qualified to Automotive AEC Q101 **RDS(on) specified at 4.5 V 92 TO-263 (D2PAK) TO-220 Power ICs SPP80P06P H* RDS(on) =23.0 m SuperSO8 Motor control ICs P-channel MOSFETs -60 IPB110P06LM RDS(on)= 11 m SPB80P06P G* RDS(on) =23.0 m PQFN 3.3 x 3.3 Gate driver ICs IPD380P06NM RDS(on)= 38 m IPD650P06NM RDS(on)= 65 m SPD30P06P G* RDS(on) =75.0 m IPD900P06NM RDS(on) = 90 m SPD18P06P G* RDS(on) =130.0 m SPD09P06PL G* RDS(on) =250.0 m IPD25DP06LM RDS(on) = 250 m IPD25DP06NM RDS(on) = 250 m SPD08P06P G* RDS(on) =300.0 m IPD40DP06NM RDS(on) = 400 m SPD15P10PL G* RDS(on) =200.0 m SPD15P10P G* RDS(on) =240.0 m TO-220 PQFN 3.3 x 3.3 SuperSO8 SO-8 BSZ15DC02KD H*/** N: 55 m, 5.1 A P: 150 m, -3.2 A BSZ215C H*/** N: 55 m, 5.1 A P: 150 m, -3.2 A BSO612CV G* N: 0.12 , 3.0 A P: 0.30 , -2.0 A BSO615C G* N: 0.11 , 3.1 A P: 0.30 , -2.0 A Microcontrollers TO-263 (D2PAK) XENSIVTM sensors TO-252 (DPAK) Packages Voltage [V] Discrete IGBTs Power P-channel MOSFETs Applications OptiMOSTM nomenclature 20-300 V MOSFETs Nomenclature OptiMOSTM Package type BSB = DirectFETTM (M Can) BSC = SuperSO8 BSF = DirectFETTM (S Can) BSK = PQFN 2 x 2 BSO = SO-8 BSZ = PQFN 3.3 x 3.3 IPA = FullPAK SPB/IPB = D2PAK IPC = Chip product SPD/IPD = DPAK IPI = I2PAK SPP/IPP = TO-220 IPS = IPAK Short Leads IPT = TO-Leadless E G 500-950 V MOSFETs X RoHS compliant Features F = Fast switching R = Integrated gate resistor E = ESD protection A = Qualified according to AEC Q101 3 = Technology generation I = Monolithically integrated Schottky-like diode FD = Fast diode LF = Linear mode capability Package options SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2 S = Single chip D = Dual chip RDS(on) [m] Divide by 10 to get RDS(on) value e.g. 014 = 1.4 m However, if the sixth character is a C, the fourth and the fifth character indicate the RDS(on) e.g. 12C = 12 m For chip products chip area in mm2 multiplied by 10 N = N-channel P = P-channel C = Complementary Level N = Normal level M = Logic level 5 V opt. L = Logic level K = Super logic level J = Ultra logic level Breakdown voltage [V] Multiply by 10 to get voltage class e.g. 03 = 30 V E = Extended, +5 V, e.g. E2 = 25 V Power ICs DirectFETTM X = MX footprint N = MN footprint Z = MZ footprint Q = SQ footprint T = ST footprint H = SH footprint J = SJ footprint (NL) (LL) (ELL) (SLL) (ULL) Package type Consecutive number without any correlation to product specification N X I I = Monolithically integrated Schottky-like diode D = Dual E = ESD S = Single Packages Channels N = N-channel P = P-channel 0901 to be used from VGS 10.0 4.5 4.5 2.5 1.8 Microcontrollers OptiMOSTM 30V BSC WBG semiconductors S L Discrete IGBTs 03 Gate driver ICs N Motor control ICs 014 XENSIVTM sensors BSC 93 Applications StrongIRFETTM nomenclature Z "X" indicates the package D = SOT-363 P = SOT-223 R = SC59 S = SOT-89, SOT-23, SOT-323 L = TSOP-6 Additional features E = ESD protected MOSFET 3 digits product identifier meaning dependent on product generation Only present in following case W = to distinguish SOT-323 from SOT-23 Only present in following case S = Single (only for packages which are also used for multichip products) Polarity N = N-channel P = P-channel C = Complementary (N-ch + P-ch) 500-950 V MOSFETs J2 WBG semiconductors Y Discrete IGBTs J1 BSX 20-300 V MOSFETs Small signal IR F 135 SA 204 Power ICs StrongIRFETTM (from May 2015 onwards) Motor control ICs Microcontrollers Packages 2 to 3 digit voltage For example: 25 = 25 V 135 = 135 V XENSIVTM sensors Drive voltage F = 4.5 VGS capable for BV 30 V L = 2.5 VGS capable for BV 30 V, 4.5 VGS capable for BV 40 V Package 1 or 2 letters B = TO-220 BA = Super220 C = Bare die or wafer DL = DirectFETTM 1.5 Large Can DM = DirectFETTM 1.5 Medium Can Can DS = DirectFETTM 1.5 Small Can Can FF = TO-220 FullPAK H = PQFN 5 x 6 HB = Power Block 5 x 6 HM = PQFN 3.0 x 3.0 or 3.3 x 3.3 HS = PQFN 2 x 2 I = TO-220 FullPAK K = SO-8 L = SOT-223 ML = SOT-23 P = TO-247 PS = Super247 R = DPAK S = D2PAK SL = TO-262 SA = D2 7-pin with pin 2 void SN = D2 7-pin with pins void SC = D2 7-pin with pin 4 void T = TollFET TS = TSOP-6 U = IPAK Gate driver ICs 3 sequential digits 3 digits issued sequentially 94 Evaluation boards and simulation models www.infineon.com/to-leadless-evaluationboard www.infineon.com/powermosfet-simulationmodels Videos www.infineon.com/mediacenter Motor control ICs Further information, data sheets and documents www.infineon.com/powermosfet-12V-300V www.infineon.com/smallsignal www.infineon.com/pchannel www.infineon.com/depletion www.infineon.com/complementary www.infineon.com/baredie Microcontrollers Useful links and helpful information XENSIVTM sensors Infineon support for low voltage MOSFETs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Low voltage MOSFETs support Packages Simulation Trusted leader in high voltage MOSFETs The revolutionary CoolMOSTM power MOSFET family sets new standards in the field of energy efficiency. Our CoolMOSTM products offer a significant reduction of conduction, switching and driving losses, and enable high power density as well as efficiency for superior power conversion systems. CoolMOSTM superjunction MOSFETs for for consumer applications (<400 W) CoolMOSTM superjunction MOSFETs for industrial applications (>250 W) and automotive 600/650 V C7 800 V P7 1) 600 V CE 600/650 V C6/E6 600 V P7 500/600/650 V C3 600 V P6 600 V CFD 500 V CE Not for new design Active Active and preferred Not for new design Time 1) Optimized for flyback topologies Price-performance 600 V P6 600 V CFD7 650 V CFD2 650 V CFDA 600 V CPA 800 V C3A Active Active and preferred Time Highest performance Fast recovery diode Automotive CoolMOSTM low power package innovations CoolMOSTM high power package innovations Click to learn more Click to learn more High voltage superjunction MOSFETs address consumer applications, such as smartphone/tablet chargers, notebook adapters, LED lighting, PC power, as well as audio and TV power supplies. Customers are increasingly replacing standard MOSFETs with superjunction MOSFETs to benefit from higher efficiency and lower power consumption for end users. CoolMOSTM P7 sets a new benchmark by offering high performance and competitive price all at once. Also for industrial applications such as server, telecom, PC power, solar, UPS, EV-charging and others, Infineon's latest CoolMOSTM7 superjunction MOSFETs with C7, G7, CFD7 and P7 product families offer what you need - from highest efficiency to best price performance. Infineon has meanwhile also complemented the portfolio with first CoolGaNTM e-mode HEMTs products to further optimize efficiency and system cost. www.infineon.com/coolmos 96 Packages XENSIVTM sensors Microcontrollers Infineon's CoolMOSTM superjunction MOSFET offering is complemented by the automotive qualified series 600 V CPA, 650 V CFDA and 800 V C3A. Gain your momentum in the rapidly growing on-board charger and DC-DC converter markets with our excellent performing automotive series with proven outstanding quality standards that go well beyond AEC Q101. Power ICs 500/600/650 V C3 700 V P7 1) Gate driver ICs 650/700 V CE Motor control ICs 600/650 V C6/E6 600 V P7 500/600 V CP 800 V C3 Discrete IGBTs 800 V CE WBG semiconductors 600/650 V G7 950 V P7 1) 900 V C3 500-950 V MOSFETs CoolMOSTM SJ MOSFETs 20-300 V MOSFETs Applications CoolMOSTM Relative efficiency @ 90 VAC (ref: IPA95R450P7) Temperature @ 90 VAC 65 0.2 5.2C 55 50 45 40 35 5 10 15 20 25 30 35 -0.2 40 0.2% -0.4 -0.6 -0.8 IPA95R450P7 20 25 Pout [W] IPA90R500C3 30 35 40 -1.0 Power ICs 15 Pout [W] Competitor IPA95R450P7 IPA90R500C3 Competitor Compared to competition, the 950 V CoolMOSTM P7 delivers best-in-class efficiency and thermal performance. Plug-and-play at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent efficiency gains of up to 0.2 % and lower MOSFET temperature of up to 5.2C compared to similar competitor technology. With over 20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOSTM P7 with best-in-class DPAK on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 m - more than 60% lower RDS(on) compared to the nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM and assembly cost. 1400 1250 m 1200 m 1200 RDS(on) [m] 1000 -65% 800 600 450 m Best-in-class DPAK RDS(on) Customer benefits: Possible change from leaded to SMD packages High power density Lower BOM cost Less production cost XENSIVTM sensors 400 200 0 Gate driver ICs 10 Motor control ICs 5 Microcontrollers 30 25 0.0 Efficiency [%] Temperature [C] 60 500-950 V MOSFETs Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOSTM P7 technology focuses on the low-power SMPS market. This new P7 family addresses applications ranging from lighting, smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. Offering 50 V more blocking voltage than its predecessor 900 V CoolMOSTM C3, the new 950 V CoolMOSTM P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease of use. As the all other P7 family members, the 950 V CoolMOSTM P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOSTM P7 is developed with best-in-class threshold voltage (VGS(th)) of 3 V and a narrow tolerance of only 0.5 V, which makes it easy to drive and design-in. WBG semiconductors Perfect fit for PFC and flyback topologies Discrete IGBTs 950 V CoolMOSTM P7 SJ MOSFET 20-300 V MOSFETs Applications 950 V CoolMOSTM P7 SJ MOSFET Competitor CoolMOSTM C3 CoolMOSTM P7 www.infineon.com/950v-p7 97 Packages Charger With the 800 V CoolMOSTM P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines best-in-class performance with the remarkable ease of use. This new product family is a perfect fit for flyback-based consumer and industrial SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as solar applications, fully covering the market needs in terms of its price/performance ratio. The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance. As demonstrated on an 80 W LED driver, bought on the market, the >45 percent reduction in switching losses (Eoss) and output capacitance (Coss) as well as the significant improvement in input capacitance (Ciss) and gate charge (QG), compared to competitor technologies, lead to 0.5 percent higher efficiency at light load which helps to reduce standby power in the end application. At full load, the observed improvement is up to 0.3 percent higher efficiency and 6C lower device temperature. 60 0.5 50 0.4 40 30 20 10 10 20 30 40 50 60 70 80 90 30 Pout [W] CoolMOSTM P7 CoolMOSTM C3 Competitor 1 Frequency [MHz] CoolMOSTM C3 Competitor 2 CoolMOSTM P7 300 Competitor 1 Competitor 2 EMI is a system level topic, and the optimization needs to be done on the system level only. Nevertheless, a pure plug-and-play measurement on Infineon's 45 W adapter reveals that 800 V CoolMOSTM P7 shows similar EMI performance to Infineon's previous technologies as well as to competitors' technologies. Compared to competition, the 800 V CoolMOSTM P7 technology allows to integrate much lower RDS(on) values into small packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels. Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFET CoolMOSTM P7 sets a new benchmark in best-in-class DPAK RDS(on) 850 m 630 m Customer benefits: 450 m -56% 360 m 280 m Competitor 2 Competitor 1 CoolMOSTM P7 CoolMOSTM P7 High power density Lower BOM cost Less production cost CoolMOSTM P7 The complete P7 platform has been developed with an integrated Zener diode that is used as an electrostatic discharge (ESD) protection mechanism, which increases the overall device ruggedness up to Human body model (HBM) class 2 level. www.infineon.com/800V-p7 98 Gate driver ICs 0 Power ICs 0 0 Motor control ICs 0.3% 0.1 Microcontrollers 0.5% 0.2 XENSIVTM sensors 0.3 Discrete IGBTs 800 V CoolMOSTM exceptional EMI performance 0.6 Packages Relative efficiency [%] Plug and play in an 80 W LED driver from market 500-950 V MOSFETs A benchmark in efficiency and thermal performance WBG semiconductors 800 V CoolMOSTM P7 SJ MOSFET 20-300 V MOSFETs Applications 800 V CoolMOSTM P7 SJ MOSFET The 700 V CoolMOSTM P7 family has been developed to serve today's and, especially, tomorrow's trends in flyback topologies. The family products address the low power SMPS market, mainly focusing on mobile phone chargers and notebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment (TV, game consoles or audio), and auxiliary power supplies. 700 V CoolMOSTM P7 achieves outstanding efficiency gains of up to 4 percent and a decrease in device temperature of up to 16 K compared to competition. In contrast with the previous 650 V CoolMOSTM C6 technology, 700 V CoolMOSTM P7 offers 2.4 percent gain in efficiency and 12 K lower device temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed. Relative efficiency @ 230 VAC; Tamb=25C Relative temperature @ 230 VAC; Tamb=25C, 30 min burn-in 0.5 18 0.0 16 -2.5 -3.0 10 8 6 3.5 4 -4.0 2 -4.5 0.5 1.0 1.5 2.0 2.5 Discrete IGBTs -2.0 12 16 K -1.5 16 13 14 Temp [K] 1.5% -1.0 4% Efficiency [%] -0.5 500-950 V MOSFETs Our answer for flyback topologies WBG semiconductors 700 V CoolMOSTM P7 SJ MOSFET 20-300 V MOSFETs Applications 700 V CoolMOSTM P7 SJ MOSFET 5 0 CoolMOSTM P7 CoolMOSTM C6 CoolMOSTM P7 CoolMOSTM C6 Competitor 1 Competitor 2 Competitor 1 Competitor 2 3.0 2.5 2.0 1.5 Comp. 1 Comp. 2 Comp. 3 Comp. 4 Comp. 5 Comp. 6 Key features Highly performant technology - Low switching losses (Eoss) - Highly efficient - Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized VGS(th) of 3 V with very narrow tolerance of 0.5 V Finely graduated portfolio Key benefits Cost competitive technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Motor control ICs 3.5 Microcontrollers VGSth typ. [V] 4.0 3 V and a very narrow tolerance of 0.5 V. This makes the CoolMOSTM P7 easy to design-in and enables the usage of lower gate source voltage, which facilitates its driving and leads to lower idle losses. To increase the ESD ruggedness up to HBM class 2 level, 700 V CoolMOSTM P7 has an integrated Zener diode. This helps to support increased assembly yield, leads to reduction of production related failures and, finally, manufacturing cost savings on customer side. XENSIVTM sensors 4.5 Gate driver ICs Keeping the ease of use in mind, Infineon has launched the technology with a low threshold voltage (VGS(th)) of Gate threshold voltage and tolerance 5.0 CoolMOSTM P7 Power ICs Iout [A] www.infineon.com/700V-p7 99 Packages Charger CoolMOSTM P7 CoolMOSTM P6 CoolMOSTM C7 500-950 V MOSFETs The 600 V CoolMOSTM P7 is a general purpose series, targeting a broad variety of applications, ranging from low power SMPS up to the highest power levels. In the low power arena, it is the successor of the 600 V CoolMOSTM CE, and for high power SPMS applications, it is the replacement for the 600 V CoolMOSTM P6, which makes it the perfect choice for applications such as chargers, adapters, lighting, TV power supply, PC power supply, solar, small light electric vehicles, server power supply, telecom power supply, and electric vehicle (EV) charging. The 600 V CoolMOSTM P7 is Infineon's most well-balanced CoolMOSTM technology in terms of combining the ease of use and excellent efficiency performance. Compared to its predecessors, it offers highest efficiency and improved power density due to the significantly reduced gate charge (QG) and switching losses (EOSS) levels, as well as optimized on-state resistance (RDS(on)). The carefully selected integrated gate resistors enable very low ringing tendency and, thanks to its outstanding robustness of body diode against hard commutation, it is suitable for hard as well as soft switching topologies, such as LLC. In addition, an excellent ESD capabilty helps to improve the quality in manufacturing. The 600 V CoolMOSTM P7 familiy offers a wide range of on-resistance (RDS(on))/package combinations, including THD, as well as SMD devices, at an RDS(on) granularity from 24 to 600 m and comes along with the most competitive price/performance ratio of all 600 V CoolMOSTM offerings. WBG semiconductors Perfect combination between high efficiency and ease of use Discrete IGBTs 600 V CoolMOSTM P7 SJ MOSFET 20-300 V MOSFETs Applications 600 V CoolMOSTM P7 SJ MOSFET CoolMOSTM CE ESD Key features Key benefits Suitable for hard and soft switching (PFC and LLC) due to Ease of use and fast design-in through low ringing an outstanding commutation ruggedness tendency and usage across PFC and PWM stages Optimized balance between efficiency and ease of use Improved efficiency and simplified thermal management Significant reduction of switching and conduction losses due to low switching and conduction losses Higher manufacturing quality due to leading to low MOSFET temperature Excellent ESD robustness >2 kV (HBM) for all products >2 kV ESD protection Better RDS(on)/package products compared to competition Increased power density solutions enabled by using Large portfolio with granular RDS(on) selection qualified for products with smaller footprint Suitable for a wide variety of applications and power ranges a variety of industrial and consumer applications Gate driver ICs Motor control ICs Commutation ruggedness Price competitiveness Microcontrollers Low ringing XENSIVTM sensors Portfolio Power ICs Efficiency www.infineon.com/600V-p7 100 Packages Charger Applications 600/650 V CoolMOSTM C7/G7 SJ MOSFET 20-300 V MOSFETs 600 V and 650 V CoolMOSTM C7 and C7 Gold (G7) SJ MOSFET Reduction of EOSS 7 6 -50% 4 3 2 1 IPP60R180C7 IPP60R199CP GaN HEMT The outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) offerings make the CoolMOSTM C7 and C7 Gold series key enablers for highest efficiency and power density. While the 650 V CoolMOSTM C7 and G7 (C7 Gold) superjunction MOSFETs are solely designed for hard switching applications such as PFC, the 600 V version is also well suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The product portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-leadless and top-side cooled Double DPAK (DDPAK) packages which come with additional Kelvin source contacts enabling further efficiency advantages over the classical 3-pin approach. Key features of CoolMOSTM C7 and C7 Gold (G7) Reduced switching loss parameters such as QG and Coss, enabling higher switching frequency 50 percent Eoss reduction compared to older CoolMOSTM CP Suitable for hard switching topologies (650 V and 600 V) Suitable for high-end resonant (600 V only) topologies Key benefits of CoolMOSTM C7 and C7 Gold (G7) Increased efficiency in hard switching topologies such as PFC and TTF Reduced size and cost of magnetic components by increased switching frequency (e.g. 65 -130 kHz) Increased power density by smaller packages for same RDS(on) Efficiency [%] PFC CCM 1200 W efficiency difference for 90 VAC (PFC CCM, 1.150 W @ 65 kHz) 0.8 0.7 12.4 0.6 0.2 0.5 7.1 0.4 Average 0.3 0.2 0.1 0.0 0.7% 0 200 400 600 800 1.000 1.200 IPZ60R040C7 www.infineon.com/c7 IPW60R040C7 IPW60R045CP 6.6 0.1 1.5 4.7 0.1 0.8 1.0 2.1 0.4% CoolMOSTM CP 6.0 0.1 3.0 Pout [W] 101 MOSFET losses [W] IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW CoolMOSTM C7 2.1 4.1 1.9 2.8 2.1 2.9 CoolMOSTM CP CoolMOSTM C7 CoolMOSTM CP CoolMOSTM C7 65 kHz Gate charge 130 kHz Turn-off Discrete IGBTs 400 Power ICs 300 Gate driver ICs 200 Drain source voltage VDS [V] Motor control ICs 100 Microcontrollers 0 Turn-on XENSIVTM sensors 0 WBG semiconductors 5 Conduction Packages Stored energy EOSS [J] The 600 V and 650 V CoolMOSTM C7 and C7 Gold (G7) superjunction MOSFET series are designed to achieve record level efficiency performance - they offer substantial efficiency benefits over the whole load range in hard switching applications compared to previous series and competition. This is achieved by minimizing switching losses via ultralow levels of switching losses (EOSS) (approximately 50 percent reduction compared to the CoolMOSTM CP), reduced gate charge (QG) and a careful balance of other relevant product key parameters. The low Eoss and QG also enable operation at higher switching frequency and related size reduction of the circuit magnetics. 500-950 V MOSFETs Infineon's highest efficiency superjunction MOSFET series Applications 600 V CoolMOSTM CFD7 SJ MOSFET As a result of significantly reduced gate charge (QG), improved turn-off behavior, a reverse recovery charge (Qrr) of up to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market, it combines highest efficiency and best-in-class reliability in soft switching applications, without sacrificing the easy implementation in the design-in process. In addition, the 600 V CoolMOSTM CFD7 enables higher power density solutions by offering best-in-class on-state resistance (RDS(on)) package combinations in through-hole devices, as well as in surface-mount devices. In ThinPAK 8x8 and TO-220 with CoolMOSTM CFD7, a RDS(on) of around 30 percent below the next best competitor offering can be achieved. All this together makes CoolMOSTM CFD7 the perfect fit for server and telecom applications, and it is also suitable for EV-charging stations. WBG semiconductors The 600 V CoolMOSTM CFD7 is Infineon's latest high voltage superjunction MOSFET series with an integrated fast body diode. It is the ideal choice for resonant topologies, such as LLC and ZVS PSFB, and targets the high SMPS market. Discrete IGBTs Infineon's answer to resonant switching high power applications 500-950 V MOSFETs 20-300 V MOSFETs 600 V CoolMOSTM CFD7 SJ MOSFET Efficiency comparison of CFD7 vs. CFD2 and competition in 2 kW ZVS Qrr comparison of 170 m CFD vs. 190 m range competition* 1 1200 0.8 -32 % 400 Power ICs 0.2 0 1.45% 0.17% -0.2 -0.4 200 -0.6 -0.8 0 Comp. C Comp. A Comp. D Comp. B CFD2 CFD7 *Comparison based on datasheet values Key features Ultrafast body diode Best-in-class reverse recovery charge (Q ) Improved reverse diode dv/dt and dif/dt ruggedness Lowest figure of merit (R x Q x E ) Best-in-class R /package combinations rr DS(on) oss 10 20 Load current [A] 30 IPW60R070CFD7 IPW65R080CFD Competitor A Competitor B Competitor C Competitor D Key benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease of use/performance trade-off Enabling increased power density solutions 40 www.infineon.com/cfd7 102 Packages XENSIVTM sensors DS(on) G 0 Gate driver ICs 600 0.4 Motor control ICs Qrr [nC] World`s best Qrr got even better! Efficiency [%] 0.6 -69 % 800 Microcontrollers 1000 13C 19C 7C 14C Average efficiency [%] 10 W charger IPS65R1K5CE 15 W charger IPS65R1K0CE High line Low line CoolMOSTM CE case temperature: The maximum MOSFET case temperature is required to be below 90C. CoolMOSTM CE meets this requirement and offers enough margin required for design-in flexibility. 10 W design: IPS65R1K5CE EN 55022 B radiated HF-field 30 MHz - 1 GHz position 30 20 10 0 14% 7% 10 W charger IPS65R1K5CE 15 W charger IPS65R1K0CE High line Low line CoolMOSTM CE efficiency performance: CoolMOSTM CE meets the 80 percent standard efficiency requirement and offers enough margin required for design-in flexibility. EN 55022 B RE 10 m OP 40 Level [dBV/m] Level [dBV/m] 4.5% 4.5% 15 W design: IPS65R1K0CE EN 55022 B radiated HF-field 30 MHz - 1 GHz position EN 55022 B RE 10 m OP 40 100 95 90 85 80 75 70 65 60 55 50 30 20 10 The performance of CoolMOSTM CE in the 10 W and 15 W design demonstrates that the series meets common EMI requirements for charger applications and thus, is also offering design-in flexibility. 0 -10 30M 500-950 V MOSFETs -10 50 60 80 100M 200 300 400 500 800 1G Frequency [Hz] Horizontal direction 30M 50 60 80 100M 200 300 400 500 800 1G Frequency [Hz] Vertical direction Horizontal direction Microcontrollers Temperature [C] 100 90 80 70 60 50 40 30 20 10 0 WBG semiconductors CoolMOSTM CE meets the standard efficiency requirements in charger application CoolMOSTM CE meets typical MOSFET case temperature requirements in charger applications Discrete IGBTs Application example: 10 W and 15 W smartphone charger Power ICs CoolMOSTM CE is a product family launched by Infineon to address consumer and lighting applications. It offers benefits in efficiency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness, while delivering the right fit performance and excellent Infineon quality. Gate driver ICs High voltage superjunction MOSFETs for consumer Motor control ICs CoolMOSTM CE SJ MOSFET 20-300 V MOSFETs Applications CoolMOSTM CE SJ MOSFET Vertical direction Product portfolio We offer a broad portfolio covering five voltage classes in both through-hole and SMD packages Capacity We own the world largest capacity for power devices, with three dedicated frontends and four backends Quality Our field failure rates are as low as 0.1 DPM Design-in support We have a large field application engineering team to provide professional and flexible support for your design XENSIVTM sensors CoolMOSTM CE customer benefits www.infineon.com/ce 103 Packages Charger For highest efficiency and controllability in high power SMPS markets ThinPAK 8x8 Enabling significant space savings With very small footprint of only 64 mm (vs. 150 mm for the DPAK) and a very low profile with only 1 mm height (vs. 4.4 mm for the DPAK) the ThinPAK 8x8 leadless SMD package for high voltage MOSFETs is a first choice to decrease system size in power-density driven designs. Low parasitic inductance and a separate 4-pin Kelvin source connection offer best efficiency and ease of use. The package is RoHS compliant with halogen-free mold compound. TO-leadless Optimized for high power applications Combined with the latest CoolMOSTM C7 Gold (G7) technology, the TO-leadless (TOLL) package is Infineon's flagship SMD package for high power/high current SMD solutions. Compared to D2PAK 7-pin, TO-leadless shows a 30 percent reduction in footprint, yet offers improved thermal performance. This and the 50 percent height reduction result in a significant advantage whenever highest power density is demanded. Equipped with 4-pin Kelvin source connection and low parasitic inductances the package offers best efficiency and ease of use. The package is MSL1 compliant and reflow solderable. www.infineon.com/coolmos-latest-packages 104 500-950 V MOSFETs WBG semiconductors Discrete IGBTs The TO-247 4-pin package with asymmetric leads is an optimized version of the standard TO-247 4-pin and enables highest efficiency and controllability in the high power SMPS market. The fourth pin acts as a Kelvin source. The main current of the switch is placed outside of the gate loop and the feedback is eliminated. This leads to less switching losses, especially at high currents. Secondly, the EMI will be reduced due to cleaner waveforms. In addition, the asymmetric leads further improve the ease of use in the design-in process. Compared to the standard TO-247 4-pin the distance between the critical pins has been increased to enable simplified wave soldering and reduced board yield loss. Power ICs TO-247 4-pin with asymmetric leads Gate driver ICs Innovative top-side cooled SMD solution for high power applications This is the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. SMD-based SMPS designs support fast switching and help to reduce the parasitic inductance associated with long leaded packages such as the common TO-220 package. In today's SMD-based designs, the output power is restricted by the thermal limit of the PCB material because the heat must be dissipated through the board. Thanks to the top-side cooling concept of DDPAK, the thermal decoupling of board and semiconductor is possible, enabling higher power density or improved system lifetime. Motor control ICs NEW! Microcontrollers Top-side cooled Double DPAK (DDPAK) XENSIVTM sensors Space-saving and high performance packages Packages CoolMOSTM SJ MOSFET high power package innovations 20-300 V MOSFETs Applications CoolMOSTM high power packages Solution for slim and small adapters and chargers ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent when compared to the DPAK package which is widely used in chargers and adapters. ThinPAK 5x6 is the right device to replace DPAK and meet the market demands of slimmer and smaller designs. Also ThinPAK 5x6 enables a reduced charger and adapter case hot spot temperature by increasing the space between the MOSFET and the charger and adapter case. TO-220 FullPAK Narrow Lead Solution for height reduction in adapters and chargers Infineon's TO-220 FullPAK Narrow Lead addresses customer needs with regards to height reduction requirements in adapter and charger applications. By offering an optimized standoff width and height and improved creepage distance, the package can be fully inserted into the PCB without any production concerns and, therefore, is especially suitable for slim and semi-slim adapter solutions. TO-220 FullPAK Wide Creepage Improved creepage distance for open frame power supplies This package solution has an increased creepage distance between the pins to 4.25 mm compared to 2.54 mm of a TO-220 FullPAK package. It targets open frame power supplies such asTV setsandPC power,where dust can enter the case through air vents. Dust particles can reduce the effective creepage between pins over time, which may lead to high voltage arcing. The package meets the requirements of open frame power supplies without any additional measures. Thus, it reduces system cost by offering an alternative to frequently used approaches to increase creepage distance. www.infineon.com/coolmos-latest-packages 105 500-950 V MOSFETs WBG semiconductors Discrete IGBTs NEW! Power ICs ThinPAK 5x6 Gate driver ICs Cost-effective drop-in replacement for DPAK The SOT-223 package without middle pin is a cost-effective alternative to DPAK, addressing the need for cost reductions in price sensitive applications. It offers a smaller footprint, while still being pin-to-pin compatible with DPAK, thus, allowing a drop-in replacement for DPAK and second sourcing. Moreover, SOT-223 achieves comparable thermal performance to DPAK and enables customers to achieve improved form factors or space savings in designs with low power dissipation. Motor control ICs NEW! Microcontrollers SOT-223 XENSIVTM sensors Addressing today's consumer needs Packages CoolMOSTM SJ MOSFET low power package innovations 20-300 V MOSFETs Applications CoolMOSTM low power packages 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA - on the fast lane in automotive applications Highest system performance in a size and weight constrained environment, outstanding and proven product quality and reliability, as well as 100 percent reliable delivery are the needs of our automotive customers. With the high voltage automotive MOSFET series 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA, Infineon is perfectly prepared to take the challenges in the strongly growing automotive market. in DC-DC converter Quality level well beyond the formal requirements of the AEC Q101 standard Resonant switching topologies through DC-DC stage of OBC Special screening measures in front end, LLC or full-bridge ZVS in DC-DC converter back end HID lamp Mission-profile based qualification procedures CoolMOSTM SJ MOSFET automotive - benchmark in quality and reliability Focus on top-notch quality and reliability without any compromise - that is the principle Infineon applies during development and qualification of all CoolMOSTM superjunction technologies. For our automotive grade derivatives, the great quality levels of the industrial base technologies are further boosted by special screening measures in front and back end, as well as by extended qualification procedures. The Infineon robustness validation approach with extended stress-test procedures, doubling the real application requirements, is one of our key measures to ensure a quality level well beyond the formal requirements of the AEC Q101 standard. Aside from extended stress times on standard qualification tests, it comprises test procedures, specially developed by Infineon to ensure highest quality of e.g., the power metallization of our devices. Usage of robust package technologies, 100 percent gate oxide screening, and top-notch production monitoring, including yield screening measures, part average testing (PAT), statistical bin alarm (SBA), and pattern recognition procedures, complete our package to guarantee highest automotive quality. This holistic approach results in an unrivalled quality position of our 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA. WBG semiconductors Easy implementation of layout and design Integrated fast body diode Limited voltage overshoot during hard commutation - self-limiting dI/dt and dV/dt Low Qrr at repetitive commutation on body diode and low Qoss Quality Discrete IGBTs 650 V CoolMOSTM CFDA Applications Hard switching topologies PFC boost stages in on-board charger Active clamp or two transistor forward Power ICs Best choice for demanding hard switching applications Lowest RDS(on) per package Lowest gate charge value QG Gate driver ICs Key features 600 V CoolMOSTM CPA Motor control ICs Product series 500-950 V MOSFETs CoolMOSTM SJ MOSFET for automotive 20-300 V MOSFETs Applications CoolMOSTM automotive +254% 2.540 cycles Microcontrollers Robustness validation - example for thermal cycling test 1.270 cycles Customer mission profile Infineon automotive robustness validation www.infineon.com/cfda www.infineon.com/coolmos-automotive 106 Packages AEC Q101 XENSIVTM sensors 1.000 cycles Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors OBC Vienna rectifier for three-phase PFC in OBC www.infineon.com/coolmos-automotive 107 XENSIVTM sensors Packages While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market, the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers full power if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level topology minimizes the filter effort compared to other solutions. By using the doubled frequency on the magnetic components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier, followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs. This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired efficiency level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA portfolio, covering an RDS(on) range from 45 to 660 m, we are well prepared to support your next generation three-phase Vienna rectifier design. With CoolMOSTM you are ready to seize your share in the emerging high-power onboard-charger markets. Microcontrollers Motor control ICs Gate driver ICs Classic PFC stage for OBC Discrete IGBTs Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy efficiency of the used electric components. The used battery voltage classes tend to become standardized at 270 V, 480 V and 870 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling within the vehicle. Discrete high voltage components are widely used for on board charger (OBC) and DC-DC converter (LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC topologies have been found in the range from 3.2 kW to 7.2 kW, whereas the future tends to stir the trend towards 11 kW or even up to 22 kW. This development, paired with a demand for high efficiency and power density at low system cost, is a strong driver for the usage of three-phase solutions. Power ICs CoolMOSTM SJ MOSFET automotive - ready to support future application trends Applications CoolMOSTM product portfolio Charger SOT-223 TO-251 Long lead TO-252 (DPAK) 450 IPA95R450P7 IPU95R450P7 IPD95R450P7 750 IPA95R750P7 IPU95R750P7 IPD95R750P7 1200 IPA95R1K2P7 IPN95R1K2P7 IPU95R1K2P7 IPD95R1K2P7 2000 IPN95R2K0P7 IPU95R2K0P7 IPD95R2K0P7 3700 IPN95R3K7P7 IPU95R3K7P7 900V CoolMOSTM C3 TO-220 TO-262 (I2PAK) TO-263 (D2PAK) TO-220 FullPAK TO-247 TO-252 (DPAK) IPW90R120C3 IPP90R340C3 IPI90R340C3 500 IPB90R340C3 IPI90R500C3 1000 IPP90R1K0C3 1200 IPP90R1K2C3 TO -220 IPA90R500C3 IPW90R500C3 IPA90R800C3 IPA90R1K0C3 IPI90R1K2C3 800 V CoolMOSTM P7 RDS(on) [m] IPW90R340C3 IPA90R1K2C3 IPD90R1K2C3 Discrete IGBTs IPP90R800C3 IPA90R340C3 ACTIVE & PREFERRED TO-220 FullPAK TO-247 TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 TO-220 FullPAK narrow lead ThinPAK 5x6* 280 IPP80R280P7 IPA80R280P7 IPW80R280P7 IPD80R280P7 IPAN80R280P7 360 IPP80R360P7 IPA80R360P7 IPW80R360P7 IPD80R360P7 IPAN80R360P7 450 IPP80R450P7 IPA80R450P7 IPD80R450P7 600 IPP80R600P7 IPA80R600P7 IPD80R600P7 IPU80R600P7 IPS80R600P7 IPN80R600P7 IPLK80R600P7* 750 IPP80R750P7 IPA80R750P7 IPD80R750P7 IPU80R750P7 IPS80R750P7 IPN80R750P7 IPLK80R750P7* 900 IPP80R900P7 IPA80R900P7 IPD80R900P7 IPU80R900P7 IPS80R900P7 IPN80R900P7 IPLK80R900P7* 1200 IPP80R1K2P7 IPA80R1K2P7 IPD80R1K2P7 IPU80R1K2P7 IPS80R1K2P7 IPN80R1K2P7 IPLK80R1K2P7* 1400 IPP80R1K4P7 IPA80R1K4P7 Power ICs 800 D2PAK ACTIVE 120 340 ThinPAK 8x8 IPAN80R450P7 IPU80R1K4P7 IPS80R1K4P7 IPN80R1K4P7 IPLK80R1K4P7* IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P7 IPN80R2K0P7 IPLK80R2K0P7* 2400 IPD80R2K4P7 IPU80R2K4P7 IPS80R2K4P7 IPN80R2K4P7 3300 IPD80R3K3P7 IPU80R3K3P7 IPN80R3K3P7 4500 IPD80R4K5P7 IPU80R4K5P7 IPN80R4K5P7 www.infineon.com/coolmos www.infineon.com/c3 * Coming soon 108 www.infineon.com/800v-p7 www.infineon.com/950v-p7 Packages XENSIVTM sensors Microcontrollers IPD80R1K4P7 2000 Gate driver ICs RDS(on) [m] TO-220 Wide creepage 20-300 V MOSFETs TO-220 FullPAK 500-950 V MOSFETs TO-220 Motor control ICs RDS(on) [m] ACTIVE & PREFERRED WBG semiconductors 950V CoolMOSTM P7 Applications CoolMOSTM product portfolio TO-220 TO-220 FullPAK TO-247 TO-252 (DPAK) 310 IPA80R310CE 460 IPA80R460CE 650 IPA80R650CE 1000 IPA80R1K0CE IPD80R1K0CE 1400 IPA80R1K4CE IPD80R1K4CE 2800 TO-251 (IPAK Short Lead) IPU80R1K0CE IPD80R2K8CE ACTIVE TO-220 RDS(on) [m] TO-262 (I2PAK) TO-263 (D2PAK) TO-220 FullPAK TO-252 (DPAK) SPW55N80C3 SPP17N80C3 SPB17N80C3 SPA17N80C3 SPW17N80C3 SPW11N80C3 450 SPP11N80C3 SPA11N80C3 650 SPP08N80C3 SPA08N80C3 900 SPP06N80C3 SPA06N80C3 SPD06N80C3 1300 SPP04N80C3 SPA04N80C3 SPD04N80C3 SPA02N80C3 SPD02N80C3 2700 Discrete IGBTs 85 TO-247 WBG semiconductors 800V CoolMOSTM C3 290 TO-251 (IPAK) 20-300 V MOSFETs RDS(on) [m] ACTIVE 500-950 V MOSFETs 800V CoolMOSTM CE ThinPAK 5x6 TO-252 (DPAK) IPA70R360P7S IPD70R360P7S IPA70R450P7S 600 IPS70R600P7S 750 900 IPS70R900P7S IPA70R600P7S IPLK70R600P7 IPA70R750P7S IPLK70R750P7 IPA70R900P7S IPLK70R900P7 1200 IPD70R600P7S IPD70R900P7S TO-251 (IPAK Short Lead w/ ISO Standoff) IPAN70R360P7S IPSA70R360P7S IPN70R360P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S IPAN70R600P7S IPSA70R600P7S IPN70R600P7S IPAN70R750P7S IPSA70R750P7S IPN70R750P7S IPAN70R900P7S IPSA70R900P7S IPN70R900P7S IPSA70R1K2P7S IPN70R1K2P7S IPSA70R1K4P7S IPN70R1K4P7S IPSA70R2K0P7S IPN70R2K0P7S IPLK70R1K2P7 1400 IPS70R1K4P7S 2000 IPLK70R1K4P7 SOT-223 TO-220 FullPAK narrow lead IPD70R1K4P7S IPLK70R2K0P7 Charger 700V CoolMOSTM CE RDS(on) [m] TO-220 ACTIVE TO-220 FullPAK Wide Creepage 600 IPAW70R600CE 950 IPAW70R950CE TO-262 (I2PAK) IPI70R950CE TO-251 (IPAK Short Lead with ISO Standoff) TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) IPSA70R600CE IPD70R600CE IPSA70R950CE IPD70R950CE IPS70R950CE IPSA70R1K4CE IPD70R1K4CE IPS70R1K4CE IPSA70R2K0CE IPD70R2K0CE IPS70R2K0CE 1000 1400 IPN70R1K5CE 2100 www.infineon.com/coolmos www.infineon.com/c3 * Coming soon 109 SOT-223 IPN70R1K0CE 1500 2000 Gate driver ICs IPS70R360P7S 450 TO-220 FullPAK Motor control ICs 360 TO-251 (IPAK Short Lead) Microcontrollers TO - 262 (I2PAK) IPN70R2K1CE www.infineon.com/ce www.infineon.com/700v-p7 XENSIVTM sensors TO -220 Packages RDS(on) [m] ACTIVE & PREFERRED Power ICs Charger 700 V CoolMOSTM P7 Applications CoolMOSTM product portfolio TO-Leadless (TOLL) 19 45 65 70 95 99 125 130 190 195 225 230 TO-247 TO -252 (DPAK) IPT65R033G7 IPT65R105G7 IPT65R195G7 650V CoolMOSTM C7 RDS(on) [m] TO-220 FullPAK ACTIVE & PREFERRED TO-220 TO-263 (D2PAK) TO-220 FullPAK TO-247 TO-247 4-pin IPP65R045C7 IPP65R065C7 IPB65R045C7 IPB65R065C7 IPA65R045C7 IPA65R065C7 IPW65R019C7 IPW65R045C7 IPW65R065C7 IPZ65R019C7 IPZ65R045C7 IPZ65R065C7 IPP65R095C7 IPB65R095C7 IPA65R095C7 IPW65R095C7 IPZ65R095C7 IPP65R125C7 IPB65R125C7 IPA65R125C7 IPW65R125C7 IPP65R190C7 IPB65R190C7 IPA65R190C7 IPW65R190C7 IPP65R225C7 IPB65R225C7 IPA65R225C7 TO-252 (DPAK) ThinPAK 8x8 WBG semiconductors 33 105 195 TO-263 (D2PAK) 20-300 V MOSFETs TO -220 IPL65R070C7 IPL65R099C7 IPL65R130C7 IPD65R190C7 IPL65R195C7 Discrete IGBTs RDS(on) [m] ACTIVE & PREFERRED 500-950 V MOSFETs 650 V CoolMOSTM C7 Gold (G-series) IPD65R225C7 IPL65R230C7 Charger TO-220 TO-251 (IPAK) IPD65R400CE IPD65R650CE IPD65R1K0CE IPD65R1K5CE TO-251 (IPAK Short Lead) SOT-223 IPS65R400CE IPS65R650CE IPS65R1K0CE TO-220 FullPAK Narrow Lead IPAN65R650CE IPN65R1K5CE ACTIVE TO-262 (I2PAK) IPP65R110CFD IPP65R150CFD TO-263 (D2PAK) TO-220 FullPAK TO-247 IPB65R110CFD IPB65R150CFD IPA65R110CFD IPA65R150CFD IPW65R041CFD IPW65R080CFD IPW65R110CFD IPW65R150CFD IPB65R190CFD IPA65R190CFD IPW65R190CFD IPB65R310CFD IPA65R310CFD TO-252 (DPAK) ThinPAK 8x8 IPL65R165CFD IPP65R190CFD IPI65R190CFD IPL65R210CFD IPP65R310CFD IPL65R340CFD IPP65R420CFD IPA65R420CFD IPA65R660CFD IPW65R420CFD IPD65R420CFD IPD65R660CFD IPD65R950CFD IPD65R1K4CFD XENSIVTM sensors 41 80 110 150 165 190 210 310 340 420 660 950 1400 TO-252 (DPAK) IPA65R400CE IPA65R650CE IPA65R1K0CE IPA65R1K5CE 650V CoolMOSTM CFD2 RDS(on) [m] TO-247 Gate driver ICs 400 650 1000 1500 TO-220 FullPAK Power ICs TO-220 Microcontrollers RDS(on) [m] Motor control ICs 650V CoolMOSTM CE ACTIVE 110 www.infineon.com/cfd2 www.infineon.com/ce Packages www.infineon.com/coolmos www.infineon.com/g7 www.infineon.com/c7 Applications CoolMOSTM product portfolio Charger TO-247 4-pin asymmetric leads IPZA60R024P7 IPZA60R037P7 IPZA60R045P7 IPZA60R060P7 IPA60R060P7 IPP60R080P7 IPP60R099P7 IPA60R080P7 IPA60R099P7 IPW60R080P7 IPW60R099P7 IPZA60R080P7 IPZA60R099P7 IPP60R120P7 IPA60R120P7 IPW60R120P7 IPZA60R120P7 TO-220 FullPAK Wide Creepage ThinPAK 8x8 D2PAK IPB60R045P7 IPB60R060P7 IPL60R065P7 IPL60R085P7 IPB60R080P7 IPB60R099P7 IPL60R105P7 IPB60R120P7 IPL60R125P7 IPW60R180P7 IPZA60R180P7 IPD60R180P7 IPB60R180P7 IPL60R185P7 IPP60R280P7 IPA60R280P7 IPD60R280P7 IPB60R280P7 IPL60R285P7 IPP60R360P7 IPA60R360P7 IPD60R360P7 IPB60R360P7 IPL60R365P7 IPP60R600P7 IPA60R600P7 600 V CoolMOSTM P7 IPD60R600P7 Charger ACTIVE & PREFERRED Standard grade 180 280 360 600 TO-220 FullPAK IPA60R180P7S IPA60R280P7S IPA60R360P7S IPA60R600P7S 600 V CoolMOSTM CFD7 RDS(on) [m] 18 24 31 40 55 60 70 75 90/95 105/115 125/140 145/160 170 185 210/225 280 360 TO-220 TO-220 FullPAK Narrow lead 28 50 80 102 125 150 190 111 IPD60R180P7S IPD60R280P7S IPD60R360P7S IPD60R600P7S TO-220 FullPAK Wide Creepage ThinPAK 8x8 IPAW60R180P7S IPAW60R280P7S IPAW60R360P7S IPAW60R600P7S SOT-223 IPN60R360P7S IPN60R600P7S ACTIVE & PREFERRED TO-263 (D2PAK) TO-220 FullPAK TO-247 IPB60R040CFD7* IPB60R055CFD7* IPW60R018CFD7 IPW60R024CFD7* IPW60R31CFD7 IPW60R40CFD7 IPW60R55CFD7 IPP60R70CFD7 IPB60R070CFD7* IPW60R70CFD7 IPP60R90CFD7 IPP60R105CFD7 IPP60R125CFD7 IPP60R145CFD7 IPP60R170CFD7 IPB60R090CFD7* IPB60R105CFD7* IPB60R125CFD7* IPB60R145CFD7* IPB60R170CFD7* IPA60R125CFD7 IPA60R145CFD7 IPA60R170CFD7 IPW60R90CFD7 IPW60R105CFD7 IPW60R125CFD7 IPW60R145CFD7 IPW60R170CFD7 IPP60R210CFD7 IPP60R280CFD7 IPP60R360CFD7* IPB60R210CFD7* IPB60R280CFD7* IPB60R360CFD7* IPA60R210CFD7 IPA60R280CFD7 IPA60R360CFD7* TO-247 4-pin TO-252 (DPAK) ThinPAK 8x8 IPL60R060CFD7 TO -220 TO-Leadless (TOLL) IPD60R145CFD7 IPD60R170CFD7 IPD60R210CFD7 IPD60R280CFD7 IPD60R360CFD7* IPL60R75CFD7 IPL60R095CFD7 IPL60R115CFD7 IPL60R140CFD7 IPL60R160CFD7 IPL60R185CFD7 IPL60R225CFD7* ACTIVE & PREFERRED TO-220 FullPAK TO-247 IPT60R028G7 IPT60R050G7 IPT60R080G7 IPT60R102G7 IPT60R125G7 IPT60R150G7 www.infineon.com/coolmos www.infineon.com/600v-p7 *Coming soon TO-252 (DPAK) IPAN60R180P7S IPAN60R280P7S IPAN60R360P7S IPAN60R600P7S 600 V CoolMOSTM C7 Gold (G-series) RDS(on) [m] TO-247 4-pin Power ICs TO -220 Microcontrollers RDS(on) [m] Discrete IGBTs IPA60R160P7 IPA60R180P7 Gate driver ICs IPP60R160P7 IPP60R180P7 500-950 V MOSFETs IPP60R060P7 IPW60R024P7 IPW60R037P7 IPW60R045P7 IPW60R060P7 TO-252 (DPAK) WBG semiconductors TO-247 Motor control ICs 24 37 45 60 65 80 99 105 120 125 160 180 185 280 285 360 365 600 TO-220 FullPAK TO-247 4-pin TO-252 (Double DPAK) IPDD60R050G7 IPDD60R080G7 IPDD60R102G7 IPDD60R125G7 IPDD60R150G7 IPDD60R190G7 www.infineon.com/g7 ThinPAK 8x8 XENSIVTM sensors TO -220 RDS(on) [m] 20-300 V MOSFETs ACTIVE & PREFERRED Industrial grade Packages 600 V CoolMOSTM P7 Applications CoolMOSTM product portfolio TO-220 FullPAK 17 TO-247 TO-247 4-pin IPW60R017C7 IPZ60R017C7 IPW60R040C7 IPZ60R040C7 IPA60R060C7 IPW60R060C7 IPZ60R060C7 IPB60R099C7 IPA60R099C7 IPW60R099C7 IPZ60R099C7 IPB60R120C7 IPA60R120C7 IPW60R120C7 40 IPP60R040C7 IPB60R040C7 60 IPP60R060C7 IPB60R060C7 IPP60R099C7 IPP60R120C7 TO-252 (DPAK) 65 99 IPL60R065C7 104 120 IPL60R104C7 125 180 IPL60R125C7 IPP60R180C7 IPB60R180C7 IPA60R180C7 IPW60R180C7 IPD60R180C7 185 IPL60R185C7 600V CoolMOSTM P6 TO-220 ACTIVE TO-220 FullPAK 41 TO-247 TO-247 4-pin TO-252 (DPAK) ThinPAK 5x6 IPW60R041P6 70 IPW60R070P6 IPZ60R070P6 99 IPP60R099P6 IPA60R099P6 IPW60R099P6 IPZ60R099P6 125 IPP60R125P6 IPA60R125P6 IPW60R125P6 160 IPP60R160P6 IPA60R160P6 IPW60R160P6 IPP60R190P6 IPA60R190P6 IPW60R190P6 180 190 ThinPAK 8x8 Discrete IGBTs RDS(on) [m] ThinPAK 8x8 20-300 V MOSFETs TO-263 (D2PAK) 500-950 V MOSFETs TO-220 IPL60R180P6 210 IPL60R210P6 230 IPA60R230P6 Power ICs RDS(on) [m] ACTIVE & PREFERRED WBG semiconductors 600V CoolMOSTM C7 255 IPP60R280P6 IPA60R280P6 IPW60R280P6 IPL60R360P6S 380 IPA60R380P6 IPD60R380P6 600 IPA60R600P6 IPD60R600P6 IPL60R650P6S www.infineon.com/coolmos www.infineon.com/c7 112 www.infineon.com/p6 Packages XENSIVTM sensors Microcontrollers Motor control ICs 650 Gate driver ICs 280 330/360 Applications CoolMOSTM product portfolio Charger TO-220 FullPAK TO-220 FullPAK Wide Creepage 190 IPAW60R190CE 280 IPAW60R280CE TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 IPA60R460CE IPS60R400CE IPD60R460CE IPS60R460CE IPAW60R600CE IPA60R650CE 800 IPD60R650CE IPS60R650CE IPD60R800CE IPS60R800CE IPAN60R650CE IPAN60R800CE 1000 IPA60R1K0CE IPD60R1K0CE IPU60R1K0CE IPS60R1K0CE IPN60R1K0CE 1500 IPA60R1K5CE IPD60R1K5CE IPU60R1K5CE IPS60R1K5CE IPN60R1K5CE 2100 IPD60R2K1CE IPU60R2K1CE 3400 IPD60R3K4CE 500V CoolMOSTM CE 190 TO-220 IPP50R190CE IPN60R2K1CE IPN60R3K4CE ACTIVE & PREFERRED TO-220 FullPAK TO-247 TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 TO-220 FullPAK Narrow Lead IPA50R190CE 280 IPP50R280CE IPA50R280CE IPD50R280CE 380 IPP50R380CE IPA50R380CE IPD50R380CE IPA50R500CE IPD50R500CE 500 IPS60R2K1CE IPS60R3K4CE WBG semiconductors 600 500-950 V MOSFETs 460 IPD60R400CE IPD50R650CE 650 Discrete IGBTs 400 IPA60R400CE RDS(on) [m] TO-220 FullPAK Narrow Lead IPAW60R380CE 380 650 TO-247 IPAN50R500CE IPN50R650CE IPA50R800CE IPD50R800CE IPN50R800CE 950 IPA50R950CE IPD50R950CE IPN50R950CE 1400 IPD50R1K4CE IPN50R1K4CE 2000 IPD50R2K0CE IPN50R2K0CE 3000 IPD50R3K0CE IPN50R3K0CE www.infineon.com/coolmos www.infineon.com/ce 113 www.infineon.com/500v-ce Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs 800 Power ICs RDS(on) [m] 20-300 V MOSFETs 600V CoolMOSTM CE ACTIVE Applications CoolMOSTM product portfolio 650V CoolMOSTM CFDA ID,max. @ TJ = 25C [A] ID_puls,max. [A] VGS(th),min.-max. [V] QG,typ. [nC] RthJC,max. [K/W] Package IPD65R420CFDA 420 8.7 27 3.5...4.5 32 1.5 TO-252 IPD65R660CFDA 660 6 17 3.5...4.5 20 2 TO-252 IPB65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-263 IPB65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-263 IPB65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-263 IPB65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-263 IPB65R660CFDA 660 6 17 3.5...4.5 20 2 TO-263 110 31.2 99.6 3.5...4.5 11 0.45 TO-220 IPP65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-220 IPP65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-220 IPP65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-220 IPW65R048CFDA 48 63.3 228 3.5...4.5 27 0.25 TO-247 IPW65R080CFDA 80 43.3 127 3.5...4.5 16 0.32 TO-247 IPW65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-247 IPW65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-247 IPW65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-247 Power ICs IPP65R110CFDA WBG semiconductors RDS(on) @ TJ = 25C VGS = 10V [m] 500-950 V MOSFETs ACTIVE & PREFERRED Discrete IGBTs Product type 20-300 V MOSFETs CoolMOSTM SJ MOSFET automotive 600V CoolMOSTM CPA Package 99 31 93 2.5 ... 3.5 60 0.5 TO-263 IPB60R199CPA 199 16 51 2.5 ... 3.5 32 0.9 TO-263 IPB60R299CPA 299 11 34 2.5 ... 3.5 22 1.3 TO-263 IPP60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-220 IPW60R045CPA 45 60 230 2.5 ... 3.5 150 0.29 TO-247 IPW60R075CPA 75 39 130 2.5 ... 3.5 87 0.4 TO-247 IPW60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-247 IPI60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-262 Product type ACTIVE & PREFERRED RDS(on) @ TJ = 25C VGS = 10V [m] ID,max. @ TJ = 25C [A] ID_puls,max. [A] VGS(th),min.-max. [V] QG,typ. [nC] RthJC,max. [K/W] Package IPD80R2K7C3A 2700 2 6 2.1 ... 3.9 12 3 TO-252 IPB80R290C3A 290 17 51 2.1 ... 3.9 91 0.55 TO-263 IPW80R290C3A 290 17 51 2.1 ... 3.9 91 0.55 TO-247 www.infineon.com/coolmos www.infineon.com/coolmos-automotive www.infineon.com/cfda Gate driver ICs RthJC,max. [K/W] Motor control ICs QG,typ. [nC] VGS(th),min.-max. [V] IPB60R099CPA 800V CoolMOSTM C3A 114 ID_puls,max. [A] Microcontrollers ID,max. @ TJ = 25C [A] XENSIVTM sensors RDS(on) @ TJ = 25C VGS = 10V [m] Packages Product type ACTIVE Applications CoolMOSTM product portfolio RDS(on) [m] Voltage [V] Series 500 CE P7 CE CE P7 CE 600 650 700 800 P7 950 P7 0-59 60-89 90-149 150-199 200-299 300-400 360 360 401-600 601-899 900-1500 >1500 650/800 950/1400 2000/3000 1000/1500 1500 900/1200/1400 1000/1500/2100 2100/3400 600 450/600 700 2000 1200 2000/2400/ 3300/4500 2000/3700 601-899 900-1500 >1500 650/750 900/1200/1400 TO-247 WBG semiconductors SOT-223 500-950 V MOSFETs 20-300 V MOSFETs CoolMOSTM SJ MOSFETs - packages RDS(on) [m] 650 800 900 60-89 90-149 150-199 P7 C7 P6 CFD7 CPA C7 CFD2 CFDA P7 C3 C3 24/37/45 17/40 41 31/40/55 45 19/45 41 48 60/80 60 70 70 75 65 80 80 99/120 99/120 99/125 90/125 99 95/125 110 110 180 180 160/190 170 200-299 300-400 280 190 150/190 150/190 420 280 290 85 401-600 Discrete IGBTs 0-59 360 Power ICs 600 Series 340 450 500 300-400 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 120 TO-247 4-pin RDS(on) [m] 600 650 Series 0-59 60-89 90-149 C7 17/40 60 99 70 99 65 95 P6 C7 19/45 150-199 200-299 200-299 Motor control ICs Voltage [V] Gate driver ICs Voltage [V] TO-247 4-pin asymmetric leads Series 0-59 60-89 90-149 150-199 600 P7 24/37/45 60/80 99/120 180 300-400 Microcontrollers RDS(on) [m] Voltage [V] RDS(on) [m] Series 600 CE 800 0-59 60-89 90-149 P7 150-199 200-299 300-400 P7 www.infineon.com/coolmos-latest-packages 115 2100 2000/2400 3300/4500 600 750 900/1200/1400 450 750 1200 1000 CE 950 1000/1500 2000/3700 ACTIVE & PREFERRED Packages Voltage [V] XENSIVTM sensors IPAK Applications CoolMOSTM product portfolio RDS(on) [m] Voltage [V] 600 650 700 0-59 60-89 90-149 150-199 200-299 300-400 400 400 360/600 401-600 460 601-899 650/800 650 900-1500 1000/1500 1000 900/1400 950/1400 900/1200/1400 600 750 401-600 450/600 600 300-400 380 360 400 380 360* >1500 2100/3400 2000 2000/2400 601-899 750 900-1500 900/1200/1400 950/1400 >1500 2000 2000 401-600 500 600 601-899 650/800 900-1500 950/1400 >1500 2000/3000 460 600 650/800 1000/1500 2100/3400 650 660 660 1000/1500 950/1400 500-950 V MOSFETs 800 Series CE CE P7 CE P7 20-300 V MOSFETs IPAK Short Lead 0-59 60-89 90-149 150-199 200-299 Series CE P7 C7 CE P6 CFD7 C7 CE CFD2 CFDA P7 CE P7 0-59 60-89 90-149 150-199 200-299 280 280 300-400 360 DPAK 600 650 700 800 900 950 180 180 170 190 280 225 400 360 420 420 600 600 450/600 750 900/1400 950/1400 900/1200/1400 450 750 900/1300 1000/1400 1200 1200 300-400 401-600 601-899 900-1500 340 500 280 360 C3 CE C3 P7 2000 2000/2400 3300/4500 2700 2800 2000 Motor control ICs 500 Power ICs RDS(on) [m] Voltage [V] Gate driver ICs 700 Series P7 CE Discrete IGBTs RDS(on) [m] Voltage [V] WBG semiconductors IPAK Short Lead with ISO Standoff IPAK RDS(on) [m] 0-59 60-89 90-149 99 150-199 200-299 >1500 199 950 1200 www.infineon.com/coolmos-latest-packages *Coming soon 116 ACTIVE & PREFERRED Packages XENSIVTM sensors 600 650 700 900 Series CPA CFD2 CE C3 Microcontrollers Voltage [V] Applications CoolMOSTM product portfolio RDS(on) [m] 65 190 150/190 150/190 200-299 300-400 280 299 210* 280* 225 360 401-600 601-899 900-1500 >1500 360* 310 310 290 500-950 V MOSFETs 70* 150-199 180 180 199 170* 660 340 Double DPAK (DDPAK) RDS(on) [m] Voltage [V] 600 Series G7 0-59 50 60-89 80 90-149 102/125 150-199 150/190 200-299 0-59 60-89 90-149 60/80 60 99/120 99/120 150-199 190 160/180 180 200-299 280 280 65 125 99/125 95/125 170 160/190 190 280 230/280 225 110 150/190 300-400 401-600 601-899 900-1500 >1500 300-400 380 360 401-600 500 600 601-899 800 900-1500 950 >1500 400 360* 380 460 650 1000/1500 650 660 750 750 650 650 800 750 1000/1500 900 900/1200/1400 900/1300 1000/1400 1000/1200 1200 601-899 900-1500 TO-220 FullPAK 600 650 700 800 900 950 45 400 310 360 360 280 290 310 340 600 420 450/600 450/600 450 460 500 450 2700 Gate driver ICs 500 Series CE P7 C7 CE CFD7 P6 C7 CE CFD2 P7 P7 C3 CE C3 P7 Power ICs RDS(on) [m] Voltage [V] TO-220 FullPAK Narrow Lead RDS(on) [m] 500 600 650 700 800 Series CE CE P7 CE P7 P7 0-59 60-89 90-149 150-199 200-299 300-400 401-600 500 180 280 360 600 280 360 360 450/600 450 >1500 650/800 650 750 900 601-899 900-1500 Microcontrollers Voltage [V] TO-leadless RDS(on) group [m] Voltage [V] Series 0-59 60-89 90-149 150-199 600 G7 28/50 80 102/125 150 650 G7 33 105 195 www.infineon.com/coolmos-latest-packages *Coming soon 117 200-299 300-400 401-600 WBG semiconductors 40* 55* 45 90-149 99/120 99/120 99 20*/105* 125*/145* 95/125 110 110 Discrete IGBTs 800 900 C7 CFD2 CFDA C3 C3 60-89 60 60/80 Motor control ICs 650 0-59 40 45 >1500 ACTIVE & PREFERRED XENSIVTM sensors 600 Series C7 P7 CPA CFD7 Packages Voltage [V] 20-300 V MOSFETs DPAK Applications CoolMOSTM product portfolio RDS(on) [m] CE P7 C7 600 40 60-89 C7 800 900 200-299 300-400 190 280 380 160/180 280 360 99/120 60 99/120 180 99/125 160/190 280 90/125 170 280 225 70 CPA 650 150-199 60/80 P6 CFD7 90-149 401-600 601-899 900-1500 >1500 600 360* 500-950 V MOSFETs 500 0-59 99 95/125 190 CFD2 45 65 110 150/190 310 CFDA 110 150/190 310 P7 280 C3 290 360 C3 420 660 450/600 750 450 650 900/1300 800 1000/1200 601-899 900-1500 340 900/1200/1400 WBG semiconductors Series TO-220 FullPAK Wide Creepage RDS(on) [m] Voltage [V] 600 0-59 60-89 90-149 150-199 200-299 300-400 401-600 P7 180 280 360 600 CE 190 280 380 CE >1500 600 600 950 Power ICs 700 Series Discrete IGBTs Voltage [V] 20-300 V MOSFETs TO-220 RDS(on) [m] Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 600 P6 300-400 401-600 700 P7 600 800 P7 600 401-600 601-899 900-1500 >1500 750 900/1200/1400 2000 750 900/1200/1400 2000 601-899 900-1500 >1500 650 Motor control ICs 360 Gate driver ICs ThinPAK 5x6 ThinPAK 8x8 600 Series 0-59 60-89 90-149 150-199 200-299 300-400 P7 65/85 105/125 185 285 365 C7 65 104/125 185 CFD7 75 P6 70 99/130 CFD2 225* 180 210 195 230 165 210 340 www.infineon.com/coolmos-latest-packages *Coming soon 118 ACTIVE & PREFERRED Packages XENSIVTM sensors 650 C7 185 Microcontrollers RDS(on) [m] Voltage [V] Applications CoolMOSTM nomenclature 20-300 V MOSFETs Nomenclature Power MOSFETs (until 2005) 20 N 60 Company S = Formerly Siemens C 3 Specifications C3 = CoolMOSTM C3 S5 = CoolMOSTM S5 Device P = Power MOSFET Breakdown voltage Divided by 10 (60x10 = 600 V) Package type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) N = SOT-223 P = TO-220 U = TO-251 (IPAK) W = TO-247 Z = TO-247 4-pin Technology N = N-channel transistors Discrete IGBTs Continuous drain current (@ TC = 25C) [A] Company I = Infineon Device P = Power MOSFET 190 P7 Reliability grade blank = Industrial A = Automotive S = Standard Series name (2-4 digits) In this case CoolMOSTM P7 (max. digits e.g. CFD7) RDS(on) [m] R = RDS(on) As a seperator between voltage und RDS(on) Breakdown voltage Divided by 10 (80x10 = 800 V) Packages Package type (max. 2 digits) A = TO-220 FullPAK B = TO-263 (D2PAK) C = Bare die D = TO-252 (DPAK) I = TO-262 (I2PAK) L = ThinPAK 8x8 N = SOT-223 P = TO-220 S = TO-251 (IPAK Short Lead) U = TO-251 (IPAK Long Lead) W = TO-247 Z = TO-247 4-pin T = TO-Leadless DD = TO-252 (Double DPAK) AW = TO-220 (Wide Creepage) AN = TO-220 (Narrow Lead) LS = ThinPAK 5x6 LK = ThinPAK 5x6 Kelvin source DQ = TO-252 (Quadruple DPAK) SA = TO-251 (IPAK Short Lead with ISO Standoff) ZA = TO-247 4-pin asymmetric R Gate driver ICs 80 Motor control ICs DD Microcontrollers P Power ICs Power MOSFETs (from October 2015 onwards) I 500-950 V MOSFETs P WBG semiconductors P XENSIVTM sensors S 119 Applications CoolMOSTM nomenclature Device P = Power MOSFET 60 R 099 C P A Automotive Series name CoolMOSTM CP and CoolMOSTM CFD RDS(on) [m] R = RDS(on) Breakdown voltage Divided by 10 (60x10 = 600 V) Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs Package type B = PG-TO-263 (D2PAK) I = PG-TO-262 (I2PAK) P = PG-TO-220 W = PG-TO-247 P 500-950 V MOSFETs Company I = Infineon P WBG semiconductors I 20-300 V MOSFETs Automotive MOSFETs 120 Further information, datasheets and documents www.infineon.com/coolmos www.infineon.com/coolmos-latest-packages www.infineon.com/coolmos-automotive www.infineon.com/gan Evaluationboards and simulation models www.infineon.com/coolmos-boards www.infineon.com/powermosfet-simulationmodels XENSIVTM sensors Videos www.infineon.com/mediacenter Motor control ICs Useful links and helpful information Microcontrollers Infineon support for high voltage MOSFETs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications High voltage MOSFETs support Packages Simulation CoolGaNTM - ultimate efficiency and reliability Power ICs Compared to silicon (Si), the breakdown field of Infineon's CoolGaNTM enhancement mode (e-mode) HEMTs is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and the reverse recovery charge is almost zero which is key to high frequency operations. GaN is the best-suited technology in hard switching as well as resonant topologies, and is enabling new approaches in current modulation. Infineon's GaN solution is based on the most robust and performing concept in the market - the enhancement mode concept - offering fast turn-on and turn-off speed. CoolGaNTM products focus on high performance and robustness, and add significant value to a broad variety of systems across many applications such as server, telecom, hyperscale data centers, wireless charging, adapter/charger, and audio. CoolGaNTM switches are easy to design-in with the matching GaN EiceDRIVERTM gate driver ICs from Infineon. 500-950 V MOSFETs The key to the next essential step towards an energy-efficient world is to use new materials, such as wide bandgap semiconductors that allow for greater power efficiency, smaller size, lighter weight, lower overall cost - or all of these together. Infineon Technologies, with its unique market position of being currently the only company offering silicon (Si),silicon carbide (SiC)andgallium nitride (GaN)devices, is the customer's first choice in all segments. WBG semiconductors Gallium nitride (GaN) and silicon carbide (SiC) Discrete IGBTs Wide bandgap semiconductors 20-300 V MOSFETs Applications Wide bandgap semiconductors www.infineon.com/wbg 122 Motor control ICs Packages XENSIVTM sensors Microcontrollers Silicon carbide (SiC) has a wide bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared to silicon. SiC-based MOSFETs are best-suited for high-breakdown, high-power applications that operate at higher frequencies compared to traditional IGBTs. CoolSiCTM MOSFETs come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions. Based on proven, high quality volume manufacturing, Infineon's CoolSiCTM solutions combine revolutionary technology with benchmark reliability - for our customers' success today and tomorrow. The offering is completed by selected driver ICs based on Infineon's successful coreless transformer technology. Gate driver ICs CoolSiCTM - revolution to rely on 123 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications High efficiency in resonant circuits New topologies and current modulation Fast and (near-)lossless switching BOM and overall cost savings Infineon leverages its unique portfolio of high and low voltage MOSFETs, driver ICs and digital controllers to complement its CoolGaNTM product line, thus enabling full exploit for GaN benefits. Application profile QRP - quality requirement profile Degradation models Motor control ICs Qualification plan Released product CoolGaNTM e-mode HEMTs overview CoolGaNTM e-mode HEMTs 600 V CoolGaNTM e-mode HEMTs 400 V CoolGaNTM e-mode HEMTs* Single-channel functional and reinforced isolated gate-driver ICs for enhancement mode GaN HEMTs Perfect fit for enhancement mode GaN HEMTs 1EDF5673K www.infineon.com/gan * Coming soon 124 Rel. investigation at development phase Microcontrollers The highest quality The qualification of GaN switches requires a dedicated approach, well beyond existing silicon standards Infineon qualifies GaN devices well beyond industry standards Application profiles are an integral part of the qualification Failure models, based on accelerated test conditions, ensure target lifetime and quality are met Infineon sets the next level of wide bandgap quality Power ICs Gate driver ICs No reverse recovery charge Advantages Operational expenses (OPEX) and capital expenditure (CAPEX) reduction 1EDF5673F XENSIVTM sensors Design benefits High power density, small and light design 1EDS5663H Packages Features Low output charge and gate charge 500-950 V MOSFETs In comparison to the next best silicon alternative, CoolGaNTM enables higher power density and the highest efficiency, especially in the partial load range, through novel topologies such as the CCM totem pole PFC stage. GaN e-mode HEMT performance features low reverse recovery charge and excellent dynamic performance in reverse conduction compared to silicon FET solutions. This enables more efficient operation at established frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components. CoolGaNTM enables doubled output power in a given energy storage slot size, freeing up space and realizing higher efficiency at the same time. Infineon's CoolGaNTM comes with industry leading reliability. During the quality management process, it is not only the device which is thoroughly tested but also its behavior in the application environment. The performance of CoolGaNTM goes beyond other GaN products in the market. WBG semiconductors Tailor-made for the highest efficiency and power density in switch mode power supplies Discrete IGBTs CoolGaNTM e-mode HEMTs 20-300 V MOSFETs Applications CoolGaNTM Infineon's CoolGaNTM 400 V* and 600 V e-mode HEMTs enable more than 98 percent system efficiency and help customers to make their end products smaller and lighter. Driving enhancement mode devices requires some additional features when choosing the correct gate driver IC, however CoolGaNTM technology does not require customized ICs. Infineon offers three new members of a single-channel galvanic isolated gate driver IC family. The new components are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaNTM. Discrete IGBTs Complete support of all requirements specific to e-mode GaN HEMTs operation: Low driving impedance (on-resistance 0.85 source, 0.35 sink) Resistor programmable gate current for steady on-state (typically 10 mA) Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges Block diagram: high-efficiency GaN switched mode power supply (SMPS) High voltage CoolGaNTM High voltage CoolGaNTM High voltage CoolGaNTM OptiMOSTM OptiMOSTM OptiMOSTM OptiMOSTM High voltage CoolGaNTM CoolMOSTM High voltage CoolGaNTM High voltage CoolGaNTM EiceDRIVERTM 2EDF7275 PFC controller GaN EiceDRIVERTM 1EDF5673* EiceDRIVERTM 2EDF7275 LLC controller www.infineon.com/gan * Coming soon 125 Packages XENSIVTM sensors *GaN EiceDRIVERTM ICs are single-channel products GaN EiceDRIVERTM 1EDS5663H* Motor control ICs Gate driver ICs EMI filter Microcontrollers AC LINE CoolMOSTM Synchronous rectifier Resonant LLC Power ICs Totem pole Full-bridge PFC WBG semiconductors CoolGaNTM 400 V and 600 V e-mode GaN HEMTs - bringing GaN technology to the next level 500-950 V MOSFETs 20-300 V MOSFETs Applications CoolGaNTM In addition, the e-mode concept offers fast turn-on and turn-off speed. This feature also simplifies pairing CoolGaNTM with the IRS20957S class D controller and therefore enables faster go-to-market. CoolGaNTM for class D audio solutions CoolGaNTM 400 V is tailored for premium HiFi home audio, professional, and aftermarket car audio systems where end users demand every detail of their high resolution sound tracks. These have been conventionally addressed by bulky linear amplifiers or tube amplifiers. With CoolGaNTM 400 V as the class D output stage, audio designers will be able to deliver the best audio experience to their prospective audio fans. 500-950 V MOSFETs CoolGaNTM 400 V enables smoother switching and more linear class D output stage by offering low/linear Coss, zero Qrr, and normally-off switch. Ideal class D audio amplifiers offer 0 percent distortion and 100 percent efficiency. What impairs the linearity and power loss is highly dependent on switching characteristics of the switching device. Infineon's CoolGaNTM 400 V breaks through the technology barrier by introducing zero reverse recovery charge in the body diode and very small, linear input and output capacitances. WBG semiconductors Class D output stage offering the best audio experience Discrete IGBTs CoolGaNTM 400 V* e-mode GaN HEMTs 20-300 V MOSFETs Applications 400 V CoolGaNTM www.infineon.com/gan * Coming soon 126 Packages XENSIVTM sensors Microcontrollers 400 V CoolGaNTM benefits from the engineering expertise Infineon has made towards challenging applications, such as telecom rectifiers and SMPS servers, where CoolGaNTM technology proved to be highly reliable. It is the most robust and performing concept in the market. The 400 V CoolGaNTM portfolio is built around class D Audio requirements, with high performing SMD packages to fully exploit the benefits of GaN technology. Gate driver ICs Key benefits Clean switching performance Narrow dead time for better THD Easy to use: compatible with the IRS20957S class D audio control IC Motor control ICs Key features Ultralow and linear Coss 400 V power devices Zero Qrr E-mode transistor - normally-off switch Power ICs CoolGaNTM 400 V devices in PG-DSO-20-87 and PG-TOLL package have been tested in class D audio amplifier applications on 300 W+300 W dual-channel system designs. Applications 600 V CoolGaNTM The e-mode concept offers fast turn-on and turn-off speed, as well as a better path towards integration. CoolGaNTM 600 V e-mode HEMTs enable simpler and more cost-effective half-bridge topologies. As e-mode based products reach maturity, CoolGaNTM 600 V HEMTs are gaining growing prominence thanks to their potential. The CoolGaNTM 600 V series is manufactured according to a specific, GaN-tailored qualification process which goes far beyond the standards for silicon power devices. CoolGaNTM 600 V is designed for datacom and server SMPS, telecom rectifiers, as well as mobile chargers and can be used as a general switch in many other industrial and consumer applications. It is the most rugged and reliable solution in the market. The CoolGaNTM portfolio is built around high performing SMD packages to fully exploit the benefits of GaN. CoolGaNTM for resonant topologies 127 Power ICs 98 IGO60R070D1 Flat efficiency > 99 % over wide load range 96 250 500 750 1000 1250 1500 1750 2000 2250 2500 Output power [W] Gate driver ICs Measured values All available boards within +/- 0.1% 97 * No external power supplies - everything included. Vin = 230 VAC, Vout = 390 VDC, tambient = 25 C 400 V Q1 Demonstration board 2.5 kW totem pole PFC board: EVAL_2500W_PFC_GAN_A Q3 AC IN Q2 Q4 www.infineon.com/gan 98.90 98.75 Full-bridge totem pole L1 99.07 99.00 Motor control ICs Applications Telecom Server Datacom Adapter and charger Wireless charging SMPS 99 Microcontrollers 99.33 99.33 99.31 99.25 99.17 99.18 2 x 70 m CoolGaNTM in DSO-20 BSC 2 x 33 m CoolMOSTM XENSIVTM sensors In resonant applications, ten times lower Qoss and QG enables high frequency operations (>1 MHz) at the highest efficiency levels Linear output capacitance leads to 8 to 10 times lower dead time Devices can be easily paralleled Power density can be pushed even further by optimizing the thermal performance CoolGaNTM enables to push the efficiency forward, thus enabling high power density e.g., in low power chargers Packages Efficiency versus load (fsw = 65 kHz)* 100 Efficiency [%] Discrete IGBTs CoolGaNTM for PFC CoolGaNTM enables the adoption of simpler half-bridge topologies (including elimination of the lossy input bridge rectifier). The result is record efficiency (>99%) with a potential for BOM savings. WBG semiconductors The highest efficiency and power density with reduced system costs 500-950 V MOSFETs 20-300 V MOSFETs CoolGaNTM 600 V e-mode GaN HEMTs 20-300 V MOSFETs Applications CoolGaNTM portfolio CoolGaNTM 400 V e-mode GaN HEMTs up to 500 W up to 200 W 70 m IGOT40R070D1** IGT40R070D1** WBG semiconductors P RDS(on) max. max 500-950 V MOSFETs HSOF-8-3 (TO-leadless) CoolGaNTM 600 V e-mode GaN HEMTs DSO-20-85 Bottom-side cooling DSO-20-87 Top-side cooling HSOF-8-3 TO-leadless LSON-8-1 DFN 8x8 35 m IGO60R035D1** IGOT60R035D1** IGT60R035D1** 70 m IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1 IGT60R190D1S* IGLD60R190D1** 190 m Discrete IGBTs Package RDS(on) IGT60R190D1** 340 m IGLD60R340D1** Infineon's CoolGaNTM devices, driven by single-channel isolated gate driver ICs from the GaN EiceDRIVERTM family, aim to unlock the full potential of GaN technology. Power ICs DSO-20-87 Top-side cooling Package Package Input to output isolation Isolation class Rating Surge testing Certification Propagation Typ. high level Typ. low level delay accuracy (sourcing) out- (sinking) output resistance put resitance SP number LGA, 13-pin, 5x5 mm functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 0.35 SP002447622 1EDF5673F DSO, 16-pin, 150 mil functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 0.35 SP003194020 1EDS5663H DSO, 16-pin, 300 mil reinforced VIOTM = 8 kVpk VISO = 5.7 kVrms VISOM > 10 kVpk VDE0884-10 UL1577 -6 ns/+7ns 0.85 0.35 SP002753980 www.infineon.com/gan www.infineon.com/gan-eicedriver *Standard grade ** Coming soon 128 Packages XENSIVTM sensors Microcontrollers 1EDF5673K Motor control ICs Product Gate driver ICs GaN EiceDRIVERTM family product portfolio Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications CoolGaNTM nomenclature Gate driver ICs Nomenclature CoolGaNTM Company I = Infineon Technology G = GaN Package type LD = DFN 8 x 8-LSON T = TOLL O = DSO20-BSC OT = DSO20-TSC 60 R 070 D 1 Reliability grade blank = Industrial A = Automotive S = Standard Generation 1 = 1st generation Product type D = Discrete S = System RDS(on) [m] R = RDS(on) www.infineon.com/gan 129 Packages XENSIVTM sensors Voltage Divided by 10 (60x10 = 600 V) T Motor control ICs G Microcontrollers I Features No reverse recovery charge Purely capacitive switching High operating temperature (Tj, max 175C) Advantages Low turn-off losses Reduction of CoolMOSTM or IGBT turn-on loss Switching losses independent from load current, switching speed and temperature I [A] T=125C, VDC= 400 V, IF=6 A, di/dt=200 A/s 10 8 6 4 2 0 -2 -4 -6 -8 -10 0.07 0.1 0.13 0.16 0.19 0.22 0.25 Time [s] SiC Schottky diode Ultrafast Si-pin diode Si-pin double diode (2*300 V) Benefits System efficiency improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI Applications Server Telecom Solar UPS EV charging Energy storage PC power Motor drives Lighting CAV Reverse recovery charge of SiC Schottky diodes versus Si-pin diodes The majority of carrier characteristics imply no reverse recovery charge and the only contribution to the switching losses comes from the tiny displacement charge of capacitive nature. In the same voltage range, silicon devices have a bipolar component resulting in much higher switching losses. The graph shows the comparison between various 600V devices. 95.0 500-950 V MOSFETs WBG semiconductors Discrete IGBTs The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a much higher breakdown voltage. Infineon offers products up to 1200 V in discrete packages and up to 1700 V in modules. Power ICs CoolSiCTM Schottky diodes Gate driver ICs Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of silicon carbide allow developing devices which by far outperform the corresponding silicon-based ones, and enable efficiency levels unattainable otherwise. Infineon's portfolio of SiC devices covers 600 V and 650 V to 1200 V Schottky diodes as well as the revolutionary CoolSiCTM MOSFET. Motor control ICs Improve efficiency and solution costs Microcontrollers Silicon carbide 20-300 V MOSFETs Applications Silicon carbide Improved system efficiency (PFC in CCM mode operation, full load, low line) The fast switching characteristics of the SiC diodes provide clear efficiency improvements at system level. The performance gap between SiC and high-end silicon devices increases with the operating frequency. 93.5 93.0 92.5 92.0 91.5 91.0 60 120 180 Switchting frequency [kHz] Infineon SiC 6 A Comp. 1 6 A www.infineon.com/sic 130 XENSIVTM sensors 94.0 240 Comp. 2 6 A Packages Efficiency [%] 94.5 Applications Silicon carbide 20-300 V MOSFETs Infineon is the world's first SiC discrete power supplier. The long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. With over 10 years pioneering experience in developing and manufacturing SiC diodes, Infineon's latest CoolSiCTM Schottky diode generation 6 family sets benchmark in quality, efficiency and reliability. CoolSiCTM Schottky diodes 650 V 500-950 V MOSFETs CoolSiCTM Schottky diodes 650 V G6 and G5 WBG semiconductors The new CoolSiCTM Schottky diode 650 V G6 product family is built over the strong characteristics of the previous generation G5, fully leveraging technology and process innovation to propose the best efficiency and zero price/ performance products to date. Foundation technology - CoolSiCTM Schottky diodes 650 V G5 Discrete IGBTs The established CoolSiCTM Schottky diodes G5 product family has been optimized after all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge current capability at competitive cost level. Innovation: optimized junction, substrate and die attach Infineon's SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high power and high efficiency SMPS applications. Field stop layer SiC substrate 110 m Backside and packaging Substrate: thin wafer technology On the substrate level, Infineon introduced thin wafer technology. At the later stage of our SiC diode production, thin wafer process is used to reduce the wafer thickness by about two-thirds, which significantly reduces the substrate resistance contribution, thus, improving both forward voltage (VF) and thermal performance. Die attach: diffusion soldering On the backside, package level diffusion soldering is introduced, which significantly improves the thermal path between lead frame and the diode, enhancing the thermal performance. With the same chip size and power dissipation, the junction temperature is reduced by 30C. www.infineon.com/sic 131 Power ICs ent urr ge c sur 15 5 0 0.00 2.00 4.00 8.00 10.00 12.00 14.00 VF (V) Combined characteristic Schottky diode forward characteristic Gate driver ICs 10 Bipolar PN diode forward characteristic Motor control ICs EPI layer 20 60 50 40 30 20 10 0 0 2 4 VF [V] Generation 5 6 Generation 2, 3 Diffusion soldering RthJC=2.0 K/W 8 Microcontrollers p+ p+ 25 XENSIVTM sensors p+ 30 RthJC=1.5 K/W Packages p+ Ti p+ 35 IF (A) Al 40 IF [A/mm2] Al wire bond Junction: merged PN structure On the junction level, it has an optimized merged PN structure. Compared to competitors, Infineon's SiC diode has additional P-doped area, which, together with the N-doped EPI layer, forms a PN junction diode. Thus, it is a combination of Schottky diode and PN junction diode. Under normal conditions it works like a standard Schottky diode. Under abnormal conditions such as lighting, AC line drop-out, it works like a PN junction diode. At high current level, the PN junction diode has significantly lower forward voltage (VF) than Schottky diode, which leads to less power dissipation, thus significantly improving the surge current capability. Applications CoolSiCTM Generation 6 On the top of these technologies, the CoolSiCTM Schottky diodes G6 product family introduces a novel and proprietary Schottky metal system. This contributes to the reduction of the forward voltage (VF) to levels which are difficult, determining a measurable decrease of conduction losses. 500-950 V MOSFETs 20 20-300 V MOSFETs Latest development - CoolSiCTM Schottky diodes 650 V G6 16 WBG semiconductors IF [A] 12 Minimized VF 8 4 0 0.5 1 1.5 2 IDH08G65C6_25C IDH08G65C6_175C IDH08G65C5_25C rated current IDH08G65C5_175C Discrete IGBTs VF [V] lower conduction loss, and lower capacitive charge (Qc) means lower switching loss. Qc x VF is the figure of merit for efficiency, and comparison indicates that the latest generation 6 products have the lowest Qc x VF on the market. Infineon's CoolSiCTM Schottky diodes offer a surge current robustness far better than the one offered by the most efficient products. Thus, under abnormal conditions, this surge current capability offers excellent device robustness. 0.02 0.02 0.00 0.00 -0.04 -0.06 -0.08 -1.00 20 30 40 50 60 70 80 90 100 -0.06 -0.08 -1.00 -1.02 10 Output power [% of nominal] G6 20 30 40 50 60 70 80 90 100 Output power [% of nominal] Competitor 1 Competitor 2 Competitor 3 In terms of efficiency, the 8 A G6 device has been tested in CCM PFC. The maximum output power is 3.5 kW. The left figure shows the relative efficiency at 65 kHz, while the right figure shows the relative efficiency at 130 kHz. This shows that Infineon's CoolSiCTM Schottky diode G6 delivers better efficiency over the full load range, keeping this advantage even at 130 kHz, therefore meeting the needs of designers who want to increase the switching frequencies in their designs to attain more power density. www.infineon.com/coolsic-g6 132 XENSIVTM sensors 10 -0.04 Packages -1.02 -0.02 Microcontrollers -0.02 Motor control ICs Relative efficiency @ 130 kHz Efficiency difference [%] Efficiency difference [%] Relative efficiency @ 65 kHz Gate driver ICs Efficiency comparison Power ICs Infineon's CoolSiCTM Schottky diodes enable optimum efficiency and ruggedness. Lower forward voltage (VF) means Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs CoolSiCTM Schottky diodes G6 are the outcome of Infineon's continuous technological and process improvements, enabling the design and development of SiC-based products, making them more price-competitive and increasing performance across generations. As a result, G6 is Infineon's best price/performance CoolSiCTM Schottky diode generation, offering the highest cost-efficiency. In addition, Infineon offers the reliability of collaborating with the industry leader. Customers can leverage Infineon's proven quality and supply chain reliability. They can benefit from "one-stop-shop" advantages and maximize system performance, combining CoolSiCTM Schottky diodes with the SJ MOSFETs of the CoolMOSTM 7 family, such as 600 V C7, 650 V C7, 600 V G7, 650 V G7 and 600 V P7. Gate driver ICs The best price performance Price Motor control ICs G2* G3 G5 * G2 is discontinued Performance (efficiency, density) Microcontrollers G6 www.infineon.com/coolsic-g6 133 Packages The combined G6 and G5 650 V CoolSiCTM Schottky diode portfolio offers wide choice of packages and ampere class granularity to allow the best fit to application. G6 comes in double DPAK, the first top-side cooled surface mount package, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved system lifetime thanks to the reduced board temperature. XENSIVTM sensors A comprehensive portfolio Key features of generation 5 Low forward voltage (VF) - 1.4 V Mild positive temperature dependency of VF High surge current capability up to fourteen times of the nominal current Up to 40A-rated diode Key benefits of 1200 V generation 5 Reduced cooling requirements through lower diode losses and lower case temperatures High system reliability by extended surge current 650 V Si IGBT/Si SJ MOSFET and 1200 V SiC diode/ultrafast Si diode in a Vienna rectifier topology, fsw=48 kHz 500-950 V MOSFETs By using hybrid Si power switch/SiC diode sets, designers of industrial applications will gain flexibility for system optimization compared to purely silicon-based solutions. System improvements by higher efficiency, higher output power or higher switching frequency are enabled by SiC diodes. Implementing CoolSiCTM diodes generation 5, for example in Vienna rectifier topology, in combination with Infineon's 650 V TRENCHSTOPTM IGBTs and 650 V CoolMOSTM MOSFETs, designers can achieve outstanding system level performance and reliability. WBG semiconductors New level of system efficiency and reliability Discrete IGBTs CoolSiCTM Schottky diodes 1200 V 20-300 V MOSFETs Applications CoolSiCTM Generation 5 99.0 650 V SJ MOSFET + 1200 V SiC diode (IPW65R045C7 + IDW15G120C5B) 650 V IGBT + 1200 V SiC diode (IKW50N65EH5 + IDW15G120C5B) Efficiency [%] 98.0 w. SiC diode CoolMOSTM 97.5 IGBT 650 V SJ MOSFET + 1200 V Si diode (IPW65R045C7 + Vendor A) 650 V IGBT + 1200 V Si diode (IKW50N65EH5 + Vendor A) w. Si diode 97.0 Gate driver ICs IGBT 98.5 Power ICs CoolMOSTM 96.0 0 1000 2000 3000 5000 SiC vs. Si diode +0.8% higher efficiency Increased output power is possible www.infineon.com/sic 134 Packages XENSIVTM sensors Microcontrollers Output power [W] 4000 Motor control ICs 96.5 Applications 20-300 V MOSFETs 500-950 V MOSFETs Best-in-class system performance Efficiency improvement and reduced cooling effort Significant reduction in junction temperature for longer lifetime and higher reliability Enables higher frequency operation for reduction in system cost and shrink Allows for increase in power density Two-level topologies can replace three-level with same efficiency for lower complexity and cost Excellent for hard switching and resonant switching topologies like LLC and ZVS TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO-247 3-pin version, especially at higher currents and higher switching frequencies. www.infineon.com/coolsic-mosfet 135 Power ICs Discrete IGBTs WBG semiconductors Gate driver ICs Benefits Motor control ICs CoolSiCTM MOSFET features Revolutionary semiconductor material - silicon carbide Very low switching losses Threshold-free on-state characteristic Wide gate-source voltage range Benchmark gate threshold voltage, VGS(th) = 4.5 V Fully controllable dV/dt Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses Microcontrollers Silicon carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of efficiency and system flexibility. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include the low switching losses with 1200 V switches, very low reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristics. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary SiC technology which enables radically new product designs with high performance and high reliability. CoolSiCTM MOSFET products are targeted for photovoltaic inverters, battery charging and energy storage. XENSIVTM sensors Infineon's CoolSiCTM technology enables radically new product designs Packages CoolSiCTM silicon carbide MOSFETs - revolution to rely on IDH04G65C6 IDDD04G65C6 6 IDH06G65C6 IDDD06G65C6 8 IDH08G65C6 IDDD08G65C6 10 IDH10G65C6 IDDD10G65C6 12 IDH12G65C6 IDDD12G65C6 16 IDH16G65C6 IDDD16G65C6 20 IDH20G65C6 IDDD20G65C6 IF [A] TO-220 R2L D2PAK R2L ThinPAK 8x8 Gate driver ICs Double DPAK 4 CoolSiCTM Schottky diodes 650 V G5 ACTIVE TO-247 Dual Die TO-247 D2PAK R2L 2 IDH02G65C5 IDK02G65C5 3 IDH03G65C5 IDK03G65C5 4 IDH04G65C5 IDK04G65C5 5 IDH05G65C5 IDK05G65C5 ThinPAK 8x8 IDL02G65C5 IDL04G65C5 6 IDH06G65C5 IDK06G65C5 IDL06G65C5 8 IDH08G65C5 IDK08G65C5 IDL08G65C5 9 IDH09G65C5 10 IDH10G65C5 IDW10G65C5 IDK10G65C5 IDL10G65C5 12 IDH12G65C5 IDW12G65C5 IDK12G65C5 IDL12G65C5 16 IDH16G65C5 IDW16G65C5 20 IDK09G65C5 IDH20G65C5 IDW20G65C5B IDW20G65C5 24 IDW24G65C5B 30/32 IDW32G65C5B IDW30G65C5 40 IDW40G65C5B IDW40G65C5 www.infineon.com/sic 136 TO-247 Motor control ICs TO-247 Dual Die XENSIVTM sensors TO-220 R2L Packages IF [A] ACTIVE & PREFERRED Microcontrollers CoolSiCTM Schottky diodes 650 V G6 Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications SiC diodes product portfolio Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs IDD03SG60C IDH04SG60C IDD04SG60C 5 IDH05SG60C IDD05SG60C 6 IDH06SG60C IDD06SG60C 8 IDH08SG60C IDD08SG60C 9 IDH09SG60C IDD09SG60C 10 IDH10SG60C IDD10SG60C 12 IDH12SG60C IDD12SG60C TO-220 R2L IF [A] ThinPAK 8x8 Motor control ICs IDH03SG60C 4 D2PAK ACTIVE & PREFERRED TO-247 Dual Die TO-247 R2L DPAK R2L 2 IDH02G120C5 IDM02G120C5 IDM02G120C5 5 IDH05G120C5 8 IDH08G120C5 10 IDH10G120C5 IDW10G120C5B IDWD10G120C5 15/16 IDH16G120C5 IDW15G120C5B IDWD15G120C5 20 IDH20G120C5 IDM08G120C5 IDW20G120C5B IDWD20G120C5 30 IDW30G120C5B IDWD30G120C5 40 IDW40G120C5B IDWD40G120C5 B" in product name refers to common-cathode configuration www.infineon.com/sic Power ICs DPAK R2L 3 CoolSiCTM Schottky diodes 1200 V G5 137 TO-247 Gate driver ICs TO-247 Dual Die Microcontrollers TO-220 R2L IDM10G120C5 XENSIVTM sensors IF [A] ACTIVE Packages CoolSiCTM Schottky diodes 650 V G3 Applications SiC diodes nomenclature S G X C Company I = Infineon Specifications C = Surge current stable Device D = Diode Breakdown voltage 60 = 600 V Package Type D = DPAK H = TO-220 R2L B = D2PAK D = DPAK = TO-220 V = TO-220 FullPAK W = TO-247 G = Low thermal resistance (diffusion soldering) Technology S = SiC diode Continuous forward current [A] I D WD X G X Power ICs CoolSiCTM Schottky diodes G5 and G6 C 5 B Company I = Infineon B = Common-cathode configuration Device D = Diode Series name 5 = Generation 5 6 = Generation 6 Package type H = TO-220 R2L W = TO-247 K = D2PAK R2L L = ThinPAK 8x8 M = DPAK R2L WD = TO-247 R2L Specifications C = Surge current stable* Breakdown voltage 65 = 650 V 120 = 1200 V G = Low thermal resistance www.infineon.com/sic *Generation 138 Packages XENSIVTM sensors Continuous forward current [A] WBG semiconductors X Gate driver ICs H Motor control ICs D Microcontrollers I Discrete IGBTs CoolSiCTM Schottky diodes G2 and G3 500-950 V MOSFETs 20-300 V MOSFETs Nomenclature M Company I = Infineon Device M = MOSFET Package Type W = TO-247 Z = TO-247 4-pin 120 R 45 M1 Reliable grade blank = Industrial A = Automotive Series name (2 digits) M1 = Generation 1 RDS(on) [m] R = RDS(on) As a separator between voltage und RDS(on) www.infineon.com/sic 139 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Breakdown voltage Divided by 10 120 = 1200 V W WBG semiconductors I Discrete IGBTs CoolSiCTM MOSFET 500-950 V MOSFETs 20-300 V MOSFETs Applications SiC diodes nomenclature Applications Silicon power diodes 20-300 V MOSFETs Silicon power diodes Filling the gap between SiC diodes and emitter controlled diodes 0 Hz Rapid 1 Rapid 2 18 kHz SiC 40 kHz 100 kHz WBG semiconductors Emitter controlled diodes 500-950 V MOSFETs The Rapid diode family complements Infineon's existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter controlled diodes. They offer a perfect cost/performance balance and target high efficiency applications switching between 18 and 100 kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOSTM and high speed IGBTs (insulated gate bipolar transistor) such as the TRENCHSTOPTM 5 and HighSpeed 3. >100 kHz 1.35 V temperature-stable forward voltage (VF) Lowest peak reverse recovery current (Irrm) Reverse recovery time (trr) < 100 ns High softness factor Power ICs Discrete IGBTs The Rapid 1 diode family Rapid 1 is forward voltage drop (VF) optimized to address low switching frequency applications between 18 kHz and 40 kHz, for example air conditioner and welder PFC stages. VF - Qrr trade-off, Rapid 1 diF/dt = 1000 A/us, Rapid 2 diF/dt = 300 A/us PFC Efficiency @ 60 kHz - Vin = 230 V 98.2 97.4 98.0 97.2 97.8 97.0 97.6 96.8 97.4 IDW30E65D1 30 A competitor A 30 A competitor B Efficiency [%] 600 500 400 Efficiency [%] 97.6 900 700 Qrr [nC] PFC E 1000 800 Motor control ICs Lowest reverse recovery charge (Qrr): VF ratio for best-in-class performance Lowest peak reverse recovery current (Irrm) Reverse recovery trr < 50 ns High softness factor 96.6 96.4 300 96.2 200 96.0 IDP08E65D2 Microcontrollers Gate driver ICs The Rapid 2 diode family Rapid 2 is Qrr/trr optimized hyperfast diode to address high speed switching applications between 40 kHz and 100 kHz, typically found in PFCs in high efficiency switch mode power supplies (SMPS) and welding machines. 97.2 97.0 96.8 Competitor S 100 96.6 Competitor F 95.8 96.4 8 A competitor D 0 1.3 95.6 1.4 1.5 1.6 1.7 1.8 1.9 VF [V] www.infineon.com/rapiddiodes www.infineon.com/ultrasoftdiodes 140 2.0 2.1 2.2 2.3 96.2 0 100 200 300 400 500 600 700 800 0 200 XENSIVTM sensors 8 A competitor C 400 Output Power [W] Packages IDP08E65D2 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Rapid 1 diodes TO-220 8 IDP08E65D1 15 IDP15E65D1 TO-220 common cathode TO-247 TO-247 common cathode TO-247 advanced isolation IDP30E65D1 IDW30E65D1 IDW30C65D1 IDW40E65D1 40 IDFW40E65D1E IDW60C65D1 75 IDW75D65D1 80 IDW80C65D1 IDFW60C65D1 Motor control ICs 60 Rapid 2 diodes 650V product family 8 IDP08E65D2 IDV08E65D2 15 IDP15E65D2 IDV15E65D2 20 IDP20E65D2 30 IDP30E65D2 40 IDP40E65D2 80 www.infineon.com/rapiddiodes 141 TO-220 FullPAK TO-220 common cathode TO-247 IDW15E65D2 IDP20C65D2 IDV30E65D2 TO-247 common cathode Microcontrollers TO-220 IDW20C65D2 IDP30C65D2 IDW30C65D2 IDW40E65D2 IDW80C65D2 XENSIVTM sensors Continuous current Ic @TC=100C [A] Gate driver ICs IDV20E65D1 20 30 TO-220 FullPAK Packages Continuous current Ic @TC=100C [A] Power ICs 650V product family 20-300 V MOSFETs Applications Silicon power diodes Emitter controlled diodes 600V and 1200V product families TO-263 (D2PAK) TO-220 Real 2-pin IDD06E60 15 IDB15E60 IDP15E60 30 IDB30E60 IDP30E60 IDW30E60 IDP45E60 45 50 IDW50E60 75 IDW75E60 IDW100E60 100 IDP12E120 12 IDP18E120 18 30 IDB30E120 IDP30E120 Discrete IGBTs 1200V TO-247 WBG semiconductors 600V 6 TO-252 (DPAK) 500-950 V MOSFETs Continuous current Ic @TC=100C [A] Power ICs Nomenclature W Company I = Infineon Device D = Diode Package type P = TO-220 V = TO-220 FullPAK W = TO-247 D = TO-252 (DPAK) B = TO-263 (D2PAK) FW = TO-247 Advanced Isolation E 65 D1 D1 = Rapid 1 D2 = Rapid 2 Nominal voltage Divided by 10 (650 V/10 = 65) Technology E = Std. diode configuration - replacement for FullPAK packagesorTO-247 + mediumperformance insulator C = Common cathode D = Dual anode www.infineon.com/ultrasoftdiodes 142 Packages XENSIVTM sensors Nominal current (@ 100C) [A] 75 Motor control ICs D Microcontrollers I Gate driver ICs Silicon power diodes Videos www.infineon.com/mediacenter www.infineon.com/ultrasoftdiodes www.infineon.com/gan www.infineon.com/gan-eicedriver Motor control ICs Microcontrollers Further information, datasheets and documents www.infineon.com/wbg www.infineon.com/sic www.infineon.com/rapiddiodes XENSIVTM sensors Useful links and helpful information Packages Infineon support for wide bandgap semiconductors Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications SiC discretes & Si diodes support Discrete IGBTs Market leadership through groundbreaking innovation and application focus TO-263 (D2PAK) TO-220 TO-220 FullPAK TO-247 TO-247 4-pin TO247PLUS TO247PLUS 4-pin TRENCHSTOPTM advanced isolation TO-247 Package options Voltage class Configuration 600V, 650V, 1100V, 1200V, 1350V, 1600V 600 V, 650 V DuoPack (with diode), single IGBTs Duopack IGBTs (with diode) and diodes Continuous collector current TC = 2-120 A 100C 40-90 A New best-in-class technologies and applications Technology TRENCHSTOPTM 5 H5/F5 650V TRENCHSTOPTM 5 L5 650V Power ICs TO-252 (DPAK) Application Gate driver ICs P-SOT-223-4 SMD SMD, single transistor, small signal Discrete IGBTs Discrete IGBT overview WBG semiconductors 500-950 V MOSFETs Resolute to achieve the highest standards in performance and quality, Infineon offers a comprehensive portfolio of application-specific discrete IGBTs. 20-300 V MOSFETs Applications Discrete IGBTs RC-H5 650V/1200V/1350V RC-E 1200V Motor control ICs Rapid diode 650V TRENCHSTOPTM IGBT6 650 V TRENCHSTOPTM IGBT6 1200 V www.infineon.com/igbtdiscretes 144 XENSIVTM sensors TRENCHSTOPTM 5 S5 650V Packages RC-drives RC-drives fast 600V Microcontrollers WR5 650V In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance of the TRENCHSTOPTM 5. Wafer thickness has been reduced by more than 25 percent, which enables a dramatic improvement in both switching and conduction losses, while providing an increased breakthrough voltage of 650V. Based on TRENCHSTOPTM 5 IGBT technology, Infineon has developed six different product families optimized for specific applications, allowing designers to optimize for high efficiency, system cost or reliability demands of the market. The quantum leap of efficiency improvement provided by the TRENCHSTOPTM 5 IGBT families opens up new opportunities for designers to explore. 500-950 V MOSFETs 650 V TRENCHSTOPTM 5 IGBT 20-300 V MOSFETs Applications 650 V TRENCHSTOPTM 5 TRENCHSTOPTM 5 F5 (hard switching) WBG semiconductors TRENCHSTOPTM 5 H5 (hard switching) (hard switching) TRENCHSTOPTM 5 S5 (hard switching) TRENCHSTOPTM 5 WR5 (resonant switching) RC-H5 (resonant switching) TRENCHSTOPTM 5 H5/F5 TRENCHSTOPTM 5 R5 TRENCHSTOPTM 5 WR5 60 70 80 90 100 110 120 130 140 150 kHz Solar, UPS, welding Ultralow frequency converters Three-level inverter type I NPC 1 and NPC 2 Modified HERIC inverter AC output (aluminum/magnesium welding) Best-in-class IGBT low VCE(sat) IGBT VCE(sat) IGBT - 1.05 V Best trade-off VCE(sat) Vss Ets for frequencies below 20 kHz Best-in-class ease-of-use IGBT Elimination of: Collector-emitter snubber capacitor and gate capacitor in low inductance designs (<100 nH) Softer switching than TRENCHSTOPTM 5 H5 Best-in-class high frequency IGBT Bridge to SJ MOSFET performance Highest efficiency, especially under light load conditions UPS, battery charger, solar, welding Medium frequency converters Multilevel inverter stages Output stages PFC UPS, solar, welding High frequency converters Multilevel inverter stages Output stages PFC Price/performance optimized application specific IGBT Induction cooking - RC-H5 Half-bridge topologies in induction cooking appliances and other resonant switching applications Price optimized application specific IGBT for zero current switching (ZCS) Optimized full rated hard switching turn-off typically found in welding Excellent RG controllability Soft recovery plus low reverse recovery charge (Qrr) for diode Air conditioning, welding Medium frequency converters Zero-voltage switching PFC Highest power density in D2PAK footprint Infineon's ultrathin TRENCHSTOPTM 5 IGBT technology allows higher power density in a smaller chip size. Infineon is the first on the market able to fit a 40 A 650 V IGBT with 40 A diode in D2PAK - 25 percent higher than any other competitors that are offering maximum 30 A DuoPack IGBT in D2PAK. Now it is possible to upgrade the available SMD designs for higher power output Pout. Key features The highest power density - 40 A IGBT co-packed with a 40 A diode in D2PAK 25 percent higher current than any other competitor Superior efficiency of leading TRENCHSTOPTM 5 technology www.infineon.com/trenchstop5 145 Key benefits Higher power design with D2PAK package Upgrade of the available designs for higher power output Less paralleling for improved system reliability and less complexity Smaller PCB, more compact system design, lighter Discrete IGBTs 50 Power ICs TRENCHSTOPTM 5 S5 40 Gate driver ICs TRENCHSTOPTM 5 L5 30 Motor control ICs 20 Microcontrollers 10 XENSIVTM sensors 0 Packages TRENCHSTOPTM 5 L5 The new 1200 V IGBT generation, TRENCHSTOPTM IGBT6, is designed to meet requirements of high efficiency, lowest conduction and switching losses in hard switching and resonant topologies, operating at switching frequencies above 15 kHz. The IGBT6 devices can be used as direct replacement for the Highspeed3 H3 series, without any changes of the design. Such plug-and-play replacement of H3 with new S6 IGBT may benefit up to 0.2 percent efficiency improvement. The RC-H5 family is the latest generation in the RC-H series of reverse conducting IGBT. With a monolithically integrated diode, they offer optimized performance for resonant switching applications such as induction cooking. R5 devices are also available in 1350V blocking voltage. 500-950 V MOSFETs The 1200 V HighSpeed 3 discrete IGBTs provides the lowest losses and the highest reliability for switching above 20 kHz. Transition to fast switching high speed devices allows reduction in the size of the active components (25-70 kHz). WBG semiconductors The 1200 V TRENCHSTOPTM 2 IGBT is optimized for low conduction losses with the lowest saturation voltage VCE(sat) of 1.75 V. A soft fast recovery emitter controlled diode further minimizes the turn-on losses. Discrete IGBTs 1200 V IGBT families 20-300 V MOSFETs Applications 1200 V discrete IGBTs TRENCHSTOPTM RC-E (resonant switching) NEW! TRENCHSTOPTM IGBT6 S6, H6 (hard switching) Power ICs TRENCHSTOPTM 2 (hard switching) HighSpeed 3 H3 (hard switching) TRENCHSTOPTM R3/R5 (resonant switching) RC-H5 RC-E 15 25 30 35 40 45 50 55 60 kHz World-class TRENCHSTOPTM RC-H products High performance and low losses Induction cooking Resonant switching Medium to high frequency converters New TRENCHSTOPTM RC-E Price versus performance leader Induction cooking Resonant switching Low to medium power cookers Best-in-class 1200V IGBT Outstanding efficiency Lowest conduction and switching losses Market proven and recognized quality leader Motor control, general purpose inverter, solar, UPS Low frequency converters High speed/high power IGBT First tailless/low loss IGBT on market Market proven and recognized quality leader Solar, UPS, welding Medium frequency converters New low switching losses and high power IGBTs Optimized for operation at 15 - 40 kHz Best combination of low VCE(sat) of 1.85 V and low switching losses UPS, solar, welding Medium frequency converters TRENCHSTOPTM 2 HighSpeed 3 H3 TRENCHSTROPTM IGBT6 www.infineon.com/rch5 www.infineon.com/rc-e www.infineon.com/igbt6-1200v 146 Packages XENSIVTM sensors NEW! 20 Gate driver ICs 10 Motor control ICs 5 Microcontrollers 0 The TRENCHSTOPTM IGBT6 family of discrete devices has been designed to meet these specific requirements of motor drives. It has been optimized for the lowest switching losses, which is particularly important in systems with higher switching frequencies up to 30 kHz. Additionally, the IGBTs are co-packed with the soft, fast recovery Rapid 1 anti-parallel diodes for the lowest total losses. With a higher blocking voltage at 650 V, and short circuit rating, TRENCHSTOPTM IGBT6 is a key contributor to robust motor designs. The devices are offered in TO-220 FullPAK packages for the required isolation, as well as DPAK for a more compact surface mount solution. Optimized for small drives requiring best-in-class efficiency Up to 20 percent reduction in total losses Lowest switching losses for better heat management and easier design-in Power ICs 500-950 V MOSFETs Motor drives up to 1 kW are used in a wide variety of applications from home appliance fans and compressors to commercial sewing machines and pumps. The market for these products demands longer lifetimes, high reliability and high efficiency. Therefore, these compact motors require power electronics with the lowest losses and best thermal performance. WBG semiconductors 650 V trench and field-stop IGBT for low power motor drives Discrete IGBTs TRENCHSTOPTM IGBT6 20-300 V MOSFETs Applications TRENCHSTOPTM IGBT6 Gate driver ICs Power losses [W] 550 W @ TA = 25C, 10 kHz, same dv/dt TRENCHSTOPTM IGBT6 IKA15N65ET6 Gen5 IRGIB15B60KD1P Pon(s) [W] Key features Lowest collector-emitter saturation voltage (VCE(sat)) and forward voltage (VF) 650 V blocking voltage 3 sec short-circuit protection capability Optimized for switching frequencies from 8-30 kHz www.infineon.com/igbt6 147 1.25 Poff(s) [W] 1.5 Pcnd(d) [W] 1.75 Prec(d) [W] Key benefits Good thermal performance, especially at higher frequencies Low losses to meet energy efficiency requirements Increased design margin and reliability Leading price/performance Microcontrollers Pcnd(s) [W] 1 XENSIVTM sensors 0.75 Packages 0.5 Motor control ICs TRENCHSTOPTM IKA15N60T The TRENCHSTOPTM IGBT 6 is released in two product families - low conduction losses optimized S6 series and improved switching losses H6 series. The TRENCHSTOPTM IGBT6 S6 series features low conduction losses of 1.85 V collector-emitter saturation voltage VCE(sat) combined with low switching losses of the HighSpeed 3 H3 series. TRENCHSTOPTM IGBT6 H6 series is optimized for low switching losses, provides ~15 percent lower total switching losses when compared to predecessor generation H3. Very soft, fast recovery anti-parallel emitter controlled diode is optimized for fast recovery while still maintaining a high level of softness complementing to an excellent EMI behaviour. Positive temperature coefficient allows easy and reliable device paralleling. Very good RG controllability allows adjustment of IGBT switching speed to the requirements of application. 500-950 V MOSFETs The new 1200 V IGBT generation TRENCHSTOPTM IGBT6 is designed to meet requirements of high efficiency, lowest conduction and switching losses in hard switching and resonant topologies operating at switching frequencies above 15 kHz. WBG semiconductors New generation 1200 V fast speed IGBT Discrete IGBTs TRENCHSTOPTM IGBT6 20-300 V MOSFETs Applications TRENCHSTOPTM advanced isolation Power ICs Datasheet specifications @ 175C TRENCHSTOPTM 2 250 CT2 HighSpeed 3 200 Lower VCE(sat) Lower Esw CS6 100 Gate driver ICs CH3 H3 150 BH6 50 30 40 50 60 70 80 90 100 Motor control ICs 20 Forward voltage VCE(sat) [V] Key features Easy, plug and play replacement of predecessor HighSpeed 3 H3 IGBT 0.15 percent system efficiency improvement when changing from H3 to S6 in TO-247-3 2) 0.2 percent system efficiency improvement when changing from H3 to S6 in TO-247PLUS 4-pin 2) www.infineon.com/igbt6-1200V 148 Key benefits Best combination of switching and conduction losses for switching frequency 15-40 kHz Low conduction losses with 1.85 V VCE(sat) for S6 series High RG controllability Low EM Full rated, robust freewheeling diode Microcontrollers 10 XENSIVTM sensors 0 Packages Switching losses Etot/ICnom [J/A] 300 TRENCHSTOPTM advanced isolation solution breaks the limits reached by traditional packaging and isolation techniques. This new isolated package enables the highest power density, the best performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink. In addition to providing 100 percent electrical isolation, TRENCHSTOPTM advanced isolation also eliminates the need for thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity, helping designers to increase power density, as well as lower system complexity and assembling costs. This new package solution allows industrial and home appliance designs to fully utilize the high performance of TRENCHSTOPTM IGBTs without compromises for isolation and cooling. Discrete IGBTs TO-247 FullPAK TO-247 with isolation film1) 35% lower Advanced isolation Version and package Price/performance advanced isolation TO-2471) TRENCHSTOPTM HighSpeed 3 Best-in-class advanced isolation TO-2472) Part number Equivalent current rating @ 65C [A ] Rth(j-h) [K/W] VCEsat [V] @ Tvj = 25C IKFW40N60DH3E 44 1.35 2.30 IKFW50N60DH3E 60 1.15 2.20 IKFW60N60DH3E 74 1.06 2.20 IKFW50N60DH3 60 1.03 1.85 IKFW60N60EH3 63 0.91 1.85 IKFW90N60EH3 95 0.84 1.85 64 0.91 1.50 0.84 1.50 TRENCHSTOPTM Best-in-class advanced isolation TO-247 IKFW50N60ET IKFW75N60ET 95 Technology Version and package Part number Equivalent current rating @ 65C [A ] Rth(j-h) [K/W] Vf [V] Price/performance advanced isolation TO-247 IDFW40E65D1E 35 1.92 1.70 IDFW60C65D1 2 x 30 1.37 1.45 Rapid 1 diode 1) Optimized to replace FullPAK packages or systems including TO-247 with medium performance insulator, standard polyimide based reinforced carrier insulator with 152 m thickness, 0.9 W/mK thermal conductivity. 2) Optimized to replace systems using TO-247 with high performance insulator, standard polyimide based reinforced carrier insulator with 152 m thickness, 1.3 W/mK thermal conductivity. www.infineon.com/advanced-isolation 149 Microcontrollers Motor control ICs 1) Isolation material: standard polyimide based reinforced carrier insulator film with 152 m thickness, 1.3 W/mK thermal conductivity Gate driver ICs Rth(j-h) TRENCHSTOPTM advanced isolation offers a broad portfolio for specific application needs Technology Power ICs 50% lower XENSIVTM sensors Key benefits Up to 35 percent reduction in assembly time reduces manufacturing cost Increased power density Improved reliability from higher yield and no isolation film misalignment Less EMI filter design effort Decreased heatsink size Thermal resistivity of package and isolation types Packages Key features 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min 100 percent tested isolated mounting surface Lowest Rth(j-h) Low coupling capacitance, 38 pF No need for isolation film or thermal interface material 500-950 V MOSFETs Fully isolated TO-247 package with industry leading IGBTs WBG semiconductors TRENCHSTOPTM advanced isolation 20-300 V MOSFETs Applications TRENCHSTOPTM advanced isolation Applications TRENCHSTOPTM 5 selection tree 20-300 V MOSFETs TRENCHSTOPTM 5 selection tree Free wheeling diode (FWD) 50 Hz-20 kHz low speed 30 kHz-120 kHz high speed 50 Hz-20 kHz low speed Low VCE(sat) TRENCHSTOPTM 5 (L5) TRENCHSTOPTM 5 (H5/F5/S5) Low VCE(sat) TRENCHSTOPTM 5 (L5) Corresponding best fit IGBT IGW30N65L5 IGP20N65H5/F5 IKW30N65EL5 IGP30N65H5/F5 IKW30N65NL5 IGP40N65H5/F5 IKW75N65EL5 Discrete IGBTs No WBG semiconductors 500-950 V MOSFETs 650 V IGW40N65H5/F5 IGW50N65H5/F5 Power ICs IKZ75N65EL5 IGW30N65H5/F5 IGZ50N65H5 Gate driver ICs IGZ75N65H5 IGZ100N65H5 IGB15N65S5 IGB20N65S5 www.infineon.com/trenchstop5 150 Packages XENSIVTM sensors Microcontrollers Motor control ICs IGB50N65S5 IGB50N65H5 30 kHz-100 kHz high speed 60 kHz-120 kHz ultra-high speed Soft" TRENCHSTOPTM 5 (S5) TRENCHSTOPTM 5 (H5) TRENCHSTOPTM 5 (F5) Corresponding best fit IGBT IKW30N65WR5 IKW30N65ES5 IKP08N65H5 IKP08N65F5 IKW40N65WR5 IKW40N65ES5 IKP15N65H5 IKP15N65F5 IKW50N65WR5 IKW50N65ES5 IKP20N65H5 IKP20N65F5 IKW75N65ES5 IKP30N65H5 IKP30N65F5 IKP40N65H5 IKP40N65F5 IKA08N65H5 IKA08N65F5 IKA15N65H5 IKA15N65F5 IKW30N65H5 IKW30N65F5 IKW40N65H5 IKW40N65F5 IKW50N65H5 IKW50N65F5 IKW50N65EH5 Discrete IGBTs RC TRENCHSTOPTM 5 (WR5) 10 kHz-40 kHz high speed Power ICs > 20 kHz-60 kHz high speed Gate driver ICs Yes WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications TRENCHSTOPTM 5 selection tree IKW75N65EH5 IKZ75N65ES5 Motor control ICs IKZ50N65EH5 IKZ50N65ES5 IKZ50N65NH5 IKZ75N65EH5 IKZ75N65NH5 NEW! IKB30N65ES5 IKB20N65EH5 IKB30N65EH5 IKB40N65EH5 NEW! IKB40N65EF5 Packages XENSIVTM sensors IKB40N65ES5 IKB15N65EH5 Microcontrollers NEW! 151 Applications Discrete IGBTs selection tree 20-300 V MOSFETs IGBT selection tree IGBT IGBT Soft Soft Ha 500-950 V MOSFETs Diode commutation Diode commutation Frequency range range Frequency 8 kHz -860 kHz kHz - 60 kHz RC series RC (monolythic) series (monolythic) RC-drives (monolythic) RC-drives (monolythic) TRENCHSTOPTM Performance TRENCHSTOPTM Performance NEW! TRENCHSTOPTM IGBT6 IGBT6 TRENCHSTOPTM 600 V 600 V 600 V, 1200 600 V,V1200 V 650 V, 1200 650 V,V1200 V IKpccN60R IKpccN60R IKpccN60RF IKpccN60RF IKpccN60T IKpccN60T IKpccN60dTP IKpccN60dTP IKpccT120... IKpccT120... IKpccN65dT6 IKpccN65dT6 WBG semiconductors 2 kHz -230 kHz kHz - 30 kHz NEW! Part number Part number NEW! IGpccN60T IGpccN60T IGpccN60TP IGpccN60TP IGpccT120 IGpccT120 IGpccN120T2 IGpccN120T2 NEW! IKpccN120dS6 IKpccN120dS6 NEW! IKpccN120dH6 IKpccN120dH6 NEW! NEW! Gate driver ICs IHpccNvvvR2 IHpccNvvvR2 IHpccNvvvR3 IHpccNvvvR3 IHpccN60R/RF IHpccN60R/RF IHpccNvvvR5 IHpccNvvvR5 NEW! IHpccNvvvE1 IHpccNvvvE1 Power ICs 600 V, 650 1200V,V,1200 V, 600 V, V, 1100 650 V,V,1100 1350 V,1350 1600V,V1600 V Discrete IGBTs VoltageVoltage range range Motor Motor controlcontrol Three-phase inverter Three-phase inverter Full-bridge inverter Full-bridge inverter Uninterruptable powerpower supplysupply Uninterruptable UPS bridge UPS bridge Three-level type II type converter Three-level II converter Major and small Major andhome small appliances home appliances Symmetrical full-bridge Symmetrical full-bridge www.infineon.com/igbtdiscretes 152 Microcontrollers Solar inverter Solar inverter Asymmetrical bridgebridge Asymmetrical Symmetrical full-bridge Symmetrical full-bridge Three-level type I or three-level type II type converter Three-level type I or three-level II converter XENSIVTM sensors Single Single switchswitch (Voltage resonance > 650 V) (Voltage resonance > 650 V) Conduction loss optimized Conduction loss optimized Packages Induction cooking Induction cooking Microwave Microwave Multifunction printers Multifunction printers Half-bridge resonant Half-bridge resonant (Current resonance < 650 V) (Current resonance < 650 V) Motor control ICs Applications Applications T 20-300 V MOSFETs Applications Discrete IGBTs selection tree 10 kHz - 100 kHz high speed > 18 kHz - 60 kHz high speed 50 Hz - 20 kHz low speed Soft turn-off TRENCHSTOPTM 5 (S5) HighSpeed 3 (H3) TRENCHSTOPTM 5 H5/F5 RC TRENCHSTOPTM 5 (WR5) Low VCE(sat) TRENCHSTOPTM 5 (L5) 650 V 600 V, 1200 V 650 V 650 V 650 V IKpccN65dS5 IKpccN60H3 IKpccN120H3 IKpccN65H5 IKpccN65F5 IKpccN65dR5 IKpccN65dL5 IGpccN60H3 IGpccN120H3 IGpccN65H5 IGpccN65F5 PFC Energy storage Battery charger Battery charger Welding Welding inverter Full-brigde Half-bridge Two transistor forward Welding UPS Solar Inverter Solar Energy storage SMPS Solar Three-level NPC1 and NPC2 topology, inner switches Welding AC output (Al/Mag welding) Packages Air conditioning HVDC (Telecom/data centers) UPS Three-level NPC1 and NPC2 topology, inner switches Microcontrollers PFC XENSIVTM sensors UPS Motor control ICs Gate driver ICs IGpccN65L5 Discrete IGBTs > 18 kHz - 60 kHz high speed Power ICs 10 kHz - 40 kHz medium speed WBG semiconductors 500-950 V MOSFETs Hard/no diode for IG** parts 153 Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Discrete IGBTs product portfolio TRENCHSTOPTM and RC-drives TO-263 (D2PAK) TO-220 TO-247 advanced isolation TO-220 FullPAK IGP06N60T IGB10N60T IGP10N60T 15 IGB15N60T IGP15N60T IGB30N60T 30 IGW30N60T IGW30N60TP IGW40N60TP 40 IGP50N60T IGW50N60T IGW50N60TP Motor control ICs IGB50N60T IGW75N60T 75 IGBT and diode Gate driver ICs IGD06N60T 50 3 IKD03N60RF 4 IKD04N60RF IKD04N60R 6 IKD06N60RF IKD06N60R IKD06N65ET6 IKB06N60T IKP06N60T IKA06N60T 10 IKD10N60RF IKD10N60R IKB10N60T IKP10N60T IKA10N60T 15 IKD15N60RF IKD15N60R IKB15N60T IKP15N60T IKA15N60T IKB20N60T IKP20N60T IKP04N60T IKW20N60T IKW30N60T IKW30N60DTP 30 IKW40N60DTP 40 50 75 IKFW50N60ET IKW50N60T IKW50N60DTP IKFW75N60ET IKW75N60T 100 IKQ100N60T 120 IKQ120N60T www.infineon.com/600V-1200V-trenchstop 154 TO-247PLUS/ Super 247 (TO247AA) IGU04N60T 10 20 TO-247 Microcontrollers Single IGBT 6 TO-252 (DPAK) XENSIVTM sensors 4 TO-251 (IPAK) Packages Continuous collector current @ Tc=100C [A] Power ICs 600V product family Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs TRENCHSTOPTM IGBT6 650V product family TO-220 TO-262 (IPAK) TO-220 FullPAK Power ICs TO-263 (D2PAK) IKD06N65ET6 IKA08N65ET6* IKA10N65ET6* IKA15N65ET6* TRENCHSTOPTM IGBT6 NEW! 1200 V fast speed IGBT product family DuoPack Continuous collector current @ Tc=100C [A] TO-263 (D2PAK) TO-220 TO-262 (I2PAK) TO-220 FullPAK 15 40 75 TO-247 TO-247PLUS 3-pin IKW15N120BH6 IKW40N120CS6 IKQ75N120CS6 TO-247PLUS 4-pin IKY40N120CS6 IKY75N120CS6 TRENCHSTOPTM Gate driver ICs 6 8 10 15 TO-252 (DPAK) Motor control ICs Continuous collector current @ Tc=100C [A] TO-263 (D2PAK) TO-220 8 15 25 40 60 8 15 25 40 50 75 www.infineon.com/igbt6 * Limited by maximum junction temperature. Applicable for TO-220 standard package. 155 TO-262 (IPAK) TO-220 FullPAK TO-247 TRENCHSTOPTM TRENCHSTOPTM 2 IGW08T120 IGW15T120 IGW25T120 IGW40T120 IGW60T120 IKW08T120 IKW15T120 IKW25T120 IKW15N120T2 IKW25N120T2 IKW40T120 IKW40N120T2 TO-247PLUS 3-pin TRENCHSTOPTM 2 XENSIVTM sensors TO-252 (DPAK) IKQ40N120CT2 IKQ50N120CT2 IKQ75N120CT2 Packages DuoPack Single IGBT Continuous collector current @ Tc=100C [A] Microcontrollers 1200V product family Applications Discrete IGBTs product portfolio Induction cooking series TO-247 Continuous collector current @ Tc=100C [A] 650V 1100V 1200V 15 1350V 1600V IHW15N120E1 NEW! 30 IHW30N65R5 40 IHW40N65R5 50 IHW50N65R5 IHW30N110R3 IHW30N120R5 IHW30N135R5 IHW40N120R5 IHW40N135R5 IHW30N160R2 HighSpeed 3 600V product family IGBT Continuous collector current @ Tc=100C [A] TO-251 (IPAK) TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-247 advanced isolation TO-220 FullPAK 20 IGB20N60H3 IGP20N60H3 IGW20N60H3 30 IGB30N60H3 IGP30N60H3 IGW30N60H3 40 IGW40N60H3 50 IGW50N60H3 60 IGW60N60H3 75 IGW75N60H3 100 IGW100N60H3 20 IKB20N60H3 IKP20N60H3 IKW20N60H3 30 DuoPack TO-247 WBG semiconductors IHW20N135R5 IHW25N120E1 NEW! Discrete IGBTs IHW20N120R5 25 500-950 V MOSFETs IHW20N65R5 IKW30N60H3 40 IKFW40N60DH3E IKW40N60H3 50 IKFW50N60DH3E IKFW50N60DH3 IKW50N60H3 60 IKFW60N60DH3E IKFW60N60EH3 IKW60N60H3 75 Power ICs 20 20-300 V MOSFETs 650V, 1100V, 1200V, 1350V and 1600V product families IKW75N60H3 90 Gate driver ICs IKFW90N60EH3 HighSpeed 3 TO-220 TO-262 (IPAK) TO-220 FullPAK TO-247 15 IGW15N120H3 25 IGW25N120H3 40 IGW40N120H3 15 IKW15N120H3 25 IKW25N120H3 40 IKW40N120H3 TO-247PLUS 3-pin TO-247PLUS 4-pin IKQ40N120CH3 IKY40N120CH3 50 IKQ50N120CH3 IKY50N120CH3 75 IKQ75N120CH3 IKY75N120CH3 Microcontrollers TO-263 (D2PAK) www.infineon.com/rch5 www.infineon.com/rc-e www.infineon.com/advanced-isolation 156 Packages XENSIVTM sensors DuoPack IGBT Continuous collector current @ Tc=100C [A] Motor control ICs 1200V product family Applications Discrete IGBTs product portfolio TO-252 (DPAK) TO-263 (D2PAK) TO-220 20 IGB20N65S5 IGP20N65F5/H5 30 IGB30N65S5 IGP30N65F5/H5 40 TO-262 (IPAK) TO-220 FullPAK IGP40N65F5/H5 IGW50N65F5/H5 IGZ50N65H5 IGW75N65H5 IGZ75N65H5 IGB50N60S5 NEW! 75 100 IKP08N65F5/H5 IKA08N65F5/H5 15 IKB15N65EH5 NEW! IKP15N65F5/H5 IKA15N65F5/H5 20 IKB20N65EH5 NEW! IKP20N65H5/F5 WBG semiconductors IGZ100N65H5 8 28 IKP28N65ES5 NEW! IKB30N65EH5 NEW! IKP30N65H5/F5 30 IKW30N65H5 IKB30N65ES5 NEW! 39 IKP39N65ES5 NEW! IKB40N65ES5 NEW! IKP40N65F5/H5 40 IKW40N65F5/H5 IKB40N65EH5 NEW! IKB40N65EF5 NEW! 50 75 IKW50N65F5/H5 IKZ50N65EH5 IKW50N65EH5 IKZ50N65NH5 IKW75N65EH5 IKZ75N65NH5 Power ICs IKZ75N65EH5 TRENCHSTOPTM 5 L5 low VCE(sat) 650V product family Continuous collector current @ Tc=100C [A] DuoPack IGBT TO-251 (IPAK) TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-262 (IPAK) TO-220 FullPAK TO-247 30 lGW30N65L5 30 IKW30N65EL5 IKW30N65NL5 75 IKW75N65EL5 TO-247 4-pin IKZ75N75EL5 TRENCHSTOPTM 5 WR5 650V product family TO-251 (IPAK) TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-262 (IPAK) TO-220 FullPAK TO-247 30 IKW30N65WR5 40 IKW40N65WR5 50 IKW50N65WR5 TO-247 4-pin Microcontrollers DuoPack Continuous collector current @ Tc=100C [A] Gate driver ICs DuoPack TO-247 4-pin IGW40N65F5/H5 IGB50N60H5 NEW! 50 TO-247 Discrete IGBTs TO-251 (IPAK) Motor control ICs IGBT Continuous collector current @ Tc=100C [A] 500-950 V MOSFETs 650V product family 20-300 V MOSFETs TRENCHSTOPTM 5 F5, H5 and S5 TRENCHSTOPTM 5 S5 TO-251 TO-263 (D2PAK) TO-220 TO-262 (IPAK) TO-220 FullPAK TO-247 TO-247 4-pin 30 IKW30N65ES5 40 IKW40N65ES5 50 IKW50N65ES5 IKZ50N65ES5 75 IKW75N65ES5 IKZ50N65ES5 www.infineon.com/trenchstop5 157 TO-252 (DPAK) Packages DuoPack Continuous collector current @ Tc=100C [A] XENSIVTM sensors 650V product family Applications IGBT nomenclature N 65 E L5 Company I = Infineon S = Formerly Siemens F5 = Ultra fast IGBT H5 = High speed IGBT L5 = Low VCE(sat) IGBT R5 = Reverse conducting IGBT E1 = Reverse conducting IGBT S5 = "Soft" high speed IGBT T6 = TRENCHSTOPTM IGBT6 TP = TRENCHSTOPTM Performance WR5 = RC TRENCHSTOPTM 5 S6 = 1200 V TRENCHSTOPTM IGBT6 H6 = 1200 V TRENCHSTOPTM IGBT6 fast Device G = Single IGBT H = Reverse conducting K = Duo pack Package type A = TO-220-3 FullPAK B = TO-263-3 (D2PAK) D = TO-252-3 (DPAK) P = TO-220-3 U = TO-251-3 (IPAK) W = TO-247-3 Y = TO-247PLUS 4-pin FW = TO-247-3 advanced isolation Q = TO-247PLUS/Super 247 (TO247AA) Z = TO-247-4 Diode (for duo pack only) B = Emitter controlled half rated C = Emitter controlled full rated D = Rapid 1 half rated E = Rapid 1 full rated N = Rapid 2 full rated W = Full rated hard switching Nominal current [A] @ 100C Nominal voltage Divided by 10 (650 V/10 = 65) Gate driver ICs Technology N = N-channel P = P-channel IGBT (before 03/2013) W Company I = Infineon S = Formerly Siemens Device K = IGBT + diode (normal drives) H = Optimized for soft switching applications (e.g. induction heating) G = Single IGBT D = Diode Package type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) P = TO-220 U = TO-251 (IPAK) W = TO-247 www.infineon.com/igbtdiscretes 158 40 N 120 H 3 Generation - = Fast IGBT (~20 kHz) H = HighSpeed generation (600 V - 1200 V) T = TRENCHSTOPTM generation (600 V IGBT 3) (1200 V IGBT 4) R = Reverse conducting RF = Reverse conducting fast F = HighSpeed FAST 5 R = Rapid diode generation Nominal voltage Divided by 10 (1200 V/10 = 120) Technology N = N-channel T = TRENCHSTOPTM E = Emitter-controlled diodes (for diode only) Nominal current (@ 100C) [A] Motor control ICs K Microcontrollers I WBG semiconductors 75 Discrete IGBTs W XENSIVTM sensors K Packages I Power ICs IGBT (after 03/2013) 500-950 V MOSFETs 20-300 V MOSFETs Nomenclature Further information, datasheets and documents www.infineon.com/igbt www.infineon.com/igbtdiscretes Evaluationboards and simulation models www.infineon.com/eval-TO-247-4pin www.infineon.com/igbtdiscrete-simulationmodels www.infineon.com/discrete-automotive-igbt www.infineon.com/latest-discrete-packages Motor control ICs Useful links and helpful information Microcontrollers Infineon support for discrete IGBTs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Discrete IGBTs support XENSIVTM sensors Videos www.infineon.com/mediacenter Packages Simulation Applications Power management ICs 20-300 V MOSFETs Power management ICs Technology leadership in power supply Quasi-resonant ICE5QSAG ICE2QS02G ICE2QS03G Half-bridge LLC resonant ICE1HS01G-1 ICE2HS01G Critical conduction mode (CrCM) PFC TDA4862G TDA4863G TDA4863-2G IRS2505LPBF Combi (PFC+PWM) CrCM + LLC XDPTM SMPS IDP2308 (DSO-14) XDPTM SMPS IDP2303A (DSO-16) 700 V Gen5 CoolSETTM ICE5AR4770AG ICE5AR4770BZS 800 V F3R CoolSETTM ICE5A/GRxx80AG ICE5ARxx80BZS ICE3A/BRxx80JZ ICE3ARxx80CJZ ICE3ARxx80VJZ ICE3ARxx80JG WBG semiconductors 650 V F3/F3R CoolSETTM ICE3Axx65ELJ ICE3RBRxx65JZ ICE3RBRxx65JG Discrete IGBTs Adjustable frequency ICE2PCS01G (50 - 250 kHz) ICE2PCS05G (20 - 250 kHz) ICE3PCS01G (OVP+brown-out) ICE3PCS02G (OVP) ICE3PCS03G (Brown-out) Fixed frequency ICE5GSAG (125 kHz) ICE5ASAG (100 kHz) ICE3AS03LJG (100 kHz) ICE3BS03LJG (65 kHz) Fixed frequency (FF) CoolSETTM Power ICs Fixed frequency ICE2PCS02G (65 kHz) ICE2PCS03G (100 kHz) Stand-alone PWM Quasi-resonant (QR) CoolSETTM 650 V CoolSETTM ICE2QRxx65(Z)/(G) 700 V CoolSETTM ICE5QRxx70AZ/G www.infineon.com/acdc 160 Packages XENSIVTM sensors Microcontrollers 800 V CoolSETTM ICE2QRxx80Z/G ICE5QRxx80AZ/G Gate driver ICs Continuous conduction mode (CCM) PFC PWM controller Motor control ICs PFC controller 500-950 V MOSFETs AC-DC power management ICs Power factor correction and combo controller www.infineon.com/acdc 161 IRS2505LPBF Crticial conduction mode PFC control High power factor and ultralow THD Wide load and line range Regulated and programmable DC bus voltage No secondary winding required MOSFET cycle-by-cycle overcurrent protection DC bus overvoltage protection Low EMI gate drive Ultralow start-up current 20.8 V internal Zener clamp on VCC Excellent ESD and latch immunity RoHS compliant 5-pin SOT-23 package Power ICs Gate driver ICs Power factor controller IC for high-power factor and low THD additional features to TDA4862 Reduced tolerance of signal levels Improved light load behavior Open loop protection Current sense input with leading edge blanking LEB Undervoltage protection SO-8 package Motor control ICs Power factor controller (PFC) IC for high-power factor and active harmonic filter IC for sinusoidal line current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Internal start-up with low current consumption Zero current detector for discontinuous operation mode High current totem pole gate driver Trimmed 1.4% internal reference Undervoltage lockout with hysteresis Very low start-up current consumption Pin compatible with world standard Output overvoltage protection Current sense input with internal low pass filter Totem pole output with active shutdown during UVLO Junction temperature range -40C to +150C Available in DIP-8 and SO-8 packages Microcontrollers TDA4863G/TDA4863-2G XENSIVTM sensors TDA4862G Packages TDA4862G TDA4863G TDA4863-2G IRS2505LPBF Discrete IGBTs WBG semiconductors 500-950 V MOSFETs Critical conduction mode PFC ICs 20-300 V MOSFETs Applications CrCM PFC ICs 20-300 V MOSFETs Applications CCM PFC ICs WBG semiconductors 500-950 V MOSFETs Continuous conduction mode PFC ICs Discrete IGBTs ICE2PCS0xG ICE3PCS0xG 2nd generation continuous conduction mode PFC IC features Motor control ICs Gate driver ICs Power ICs Fulfills class D requirements of IEC 61000-3-2 Lowest count of external components Adjustable and fixed switching frequencies Frequency range from 20 to 250 kHz Versions with brown-out protection available Wide input range supported Enhanced dynamic response during load jumps Cycle by cycle peak current limiting Integrated protections OVP, OCP DIP-8 and DSO-8 Lead-free, RoHS compliant 2nd generation continuous conduction mode PFC IC product portfolio Frequency - fSW Current drives 50-250 kHz 2.0 A ICE2PCS02G 65 kHz 2.0 A ICE2PCS03G 100 kHz 2.0 A ICE2PCS05G 20-250 kHz 2.0 A Package DSO-8 www.infineon.com/acdc 162 Packages XENSIVTM sensors Product ICE2PCS01G Microcontrollers 20-300 V MOSFETs Applications CCM PFC ICs 3rd generation continuous conduction mode PFC IC features WBG semiconductors 500-950 V MOSFETs Fulfills class D requirements of IEC 61000-3-2 Integrated digital voltage loop compensation Boost follower function Bulk voltage monitoring signals, brown-out Multi protections such as double OVP Fast output dynamic response during load jump External synchronization Extra-low peak current limitation threshold SO-8 and SO-14 Lead-free, RoHS compliant 3rd generation continuous conduction mode PFC IC product portfolio Product Frequency - fSW Current drives Features Package 0.75 A OVP+brown-out SO-14 0.75 A OVP SO-8 0.75 A Brown-out SO-8 ICE3PCS01G ICE3PCS02G Adjustable ICE2PCS01G ICE2PCS05G Digital control voltage loop Variable frequency ICE2PCS02G ICE2PCS03G - Synchronous frequency - - ICE3PCS03G ICE3PCS02G ICE3PCS01G Open loop protection Low peak current limit -1 V -1 V -0.4 V -0.4 V -0.2 V Brown-out protection - - Overvoltage protection Second overvoltage protection - - Boost follower mode - 5 V regulator - www.infineon.com/acdc 163 Packages XENSIVTM sensors Microcontrollers PFC enable function Motor control ICs PFC CCM IC by feature Gate driver ICs Power ICs ICE3PCS03G Discrete IGBTs Frequency - fSW Dead time Current drives Package 30 kHz~600 kHz 380 ns 1.5 A DSO-8 LLC resonant + SR ICE2HSO1G Product Frequency - fsw Dead time Current drives Package ICE2HS01G 30 kHz~1 MHz 100~1000 ns 0.3 A DSO-20 www.infineon.com/acdc 164 Novel LLC/SR operation mode and controlled by primary side controller Multiple protections for SR operation Tight tolerance control Accurate setting of switching frequency and dead time Simple system design Optimized system efficiency Multiple converter protections: OTP, OLP, OCP, latch-off enable External disable for either SR switching or HB switching Lead-free, RoHS compliant package DSO-20 package 500-950 V MOSFETs WBG semiconductors Motor control ICs Resonant LLC half-bridge controller IC with integrated synchronized rectifier control Gate driver ICs Power ICs Product ICE1HS01G-1 Microcontrollers ICE1HS01G-1 XENSIVTM sensors Novel and simple design (12 components + HB driver) Minimum operating frequency is adjustable externally Burst mode operation for output voltage regulation during no load and/or bus overvoltage Multiple protections in case of fault Input voltage sense for brown-out protection Open loop/overload fault detection by FB pin with auto restart and adjustable blanking/restart time Frequency shift for overcurrent protection Lead-free, RoHS compliant package DSO-8 package Packages LLC resonant (no SR) Discrete IGBTs Resonant LLC half-bridge controller IC 20-300 V MOSFETs Applications LLC controller ICs Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors DSO-20 up to 600 kHz up to 1 MHz LLC soft start LLC burst mode Adjustable minimum frequency Overload/open loop protection Mains undervoltage protection with hysteresis 2-level 3-level Drive signal for synchronous rectification - Adjustable dead time - External latch-off and OTP - LCD-TV, audio, etc. Server, PC, LCD-TV, etc. Overcurrent protection www.infineon.com/acdc 165 Packages XENSIVTM sensors Microcontrollers Motor control ICs Target application Discrete IGBTs ICE2HS01G DSO-8 Power ICs Switching frequency range ICE1HS01G-1 Gate driver ICs LLC half-bridge controller IC Package Applications Climate saver systems 20-300 V MOSFETs Climate saver systems Climate saver 80 PLUS(R) and 80 PLUS(R) Bronze 3.3 V PFC/PWM 5V WBG semiconductors 5V 500-950 V MOSFETs 12 V PFC block ICE1CS02/G Discrete IGBTs 80 PLUS(R) and 80 PLUS(R) Bronze FF CoolSETTM PWM block ICE5GR4780AG Standby block FF CoolSETTM ICE5GR2280AG ICE5GR1680AG ICE3AR1080JG Power ICs ICE5AR0680AG 5V DC-DC 3.3 V 12 V 80 PLUS(R) Silver PWM block FF CoolSETTM ICE2PCS01G ICE2PCS02G ICE1HS01G-1 ICE5GR4780AG Standby block FF CoolSETTM 5V ICE5GR2280AG ICE5GR1680AG ICE3AR1080JG XENSIVTM sensors PFC block PWM Microcontrollers PFC Motor control ICs DC-DC Gate driver ICs Climate saver 80 PLUS(R) Silver Packages ICE5AR0680AG 166 Climate saver 80 PLUS(R) Gold Climate saver 80 PLUS(R) Platinum Certification for Infineon's PC power reference design 20-300 V MOSFETs Applications Climate saver systems 5V DC-DC 3.3 V 500-950 V MOSFETs DC-DC WBG semiconductors 12 V PWM 5V Discrete IGBTs PFC 80 PLUS(R) Platinum Certification for Infineon's PC power reference design ICE3PCS01G PFC block ICE3PCS02G ICE3PCS01G PFC block ICE3PCS03G PWM block Standby block FF CoolSETTM ICE2HS01G ICE3PCS02G ICE3PCS03G PWM block ICE2HS01G ICE5GR4780AG ICE5QR4780AZ ICE5GR2280AG ICE2QR4780G ICE5GR1680AG ICE3AR1080JG ICE5AR0680AG Standby block QR CoolSETTM ICE5QR2280AZ ICE2QR2280G-1 ICE5QR1680AG Motor control ICs 80 PLUS(R) Gold Gate driver ICs Power ICs FF CoolSETTM www.infineon.com/pcpower www.infineon.com/acdc www.infineon.com/coolset 167 Packages XENSIVTM sensors ICE5QR0680AG Microcontrollers ICE2QR1080G Applications Isolated AC-DC 20-300 V MOSFETs Isolated AC-DC 500-950 V MOSFETs 5th generation quasi-resonant PWM IC and CoolSETTM features zero crossing detector 5th generation quasi-resonant CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C RDS(on) max 700 V 800 V 15 W 5.18 DIP-7 ICE5QR4770AZ DSO-12 ICE5QR4770AG DIP-7 ICE5QR4780AZ 22 W 27 W 2.35 1.75 ICE5QR2270AZ 32 W 41 W~42 W 1.25 0.80 ICE5QR1070AZ ICE5QR2280AZ DSO-12 ICE5QR0680AZ ICE5QR1680AG ICE5QR0680AG 2nd generation quasi-resonant CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C RDS(on) max DIP-7 650 V DIP-8 DSO-12 14 W~15 W 20 W~21 W 5.44 ~ 5.18 2.62 800 V DSO-12 23 W~26 W 31 W 1.96 1.11 0.75 ~0.71 ICE2QR1765Z ICE2QR0665Z ICE2QR4765 ICE2QR1765 ICE2QR0665 ICE2QR4765G ICE2QR1765G ICE2QR0665G ICE2QR2280Z ICE2QR4780G ICE2QR2280G ICE2QR2280G-1 www.infineon.com/coolset 1) Calculated maximum output power in an open frame design at Ta=50C, Tj=125C and without copper area as heat sink 168 38 W~42 W ICE2QR4765Z DIP-7 Power ICs Auto restart mode for CS pin short-to-ground protection Limited charging current during VCC pin short-to-ground protection Peak power limitation with input voltage compensation Minimum switching frequency limitation (no audible noise on power units on/off) DSO package (controller) and DIP-7/DSO-12 (CoolSETTM ) Gate driver ICs Motor control ICs Auto restart mode for brown-out protection Auto restart mode for VCC under-/ overvoltage protection Auto restart mode for open-loop and output overload protection Auto restart mode for overtemperature protection with hysteresis Auto restart mode for output overvoltage Microcontrollers ICE2QR0680Z XENSIVTM sensors Integrated CoolMOSTM in both 700 V and 800 V MOSFET with cascode configuration Digital frequency reduction with reducing load Novel quasi-resonant to minimize the spread of switching frequency between low and high line AC input Selectable active burst mode entry/exit profile Auto restart mode for line overvoltage protection ICE2QR1080G Packages Discrete IGBTs WBG semiconductors QR CoolSETTM 20-300 V MOSFETs Applications Isolated AC-DC 500-950 V MOSFETs 5th generation fixed frequency PWM IC and CoolSETTM features Cascode configuration for brown-in protection, fast and robust start-up Available in both 100 kHz and 125 kHz fixed switching frequency Frequency reduction in tandem with load reduction to increase efficiency Selectable active burst mode entry/ exit profile to optimize standby power and ability to disable Support CCM flyback operation with in-build slope compensation Integrated error amplifier for direct feedback (e.g. non-isolated flyback) Adjustable line input overvoltage protection (only ICE5xRxxxxAG) VCC and CS pin short-to-ground protection Auto restart protection mode to minimize interruption to operation DSO-8 package (standalone controller), DIP-7 and DSO-12 package for CoolSETTM Power ICs Integrated CoolMOSTM in both 700 V and 800 V MOSFET 5th generation fixed frequency CoolSETTM RDS(on) max 700 V 800 V 15 W 23 W 27 W 40 W 5.18 2.35 1.75 0.80 DIP-7 ICE5AR4770BZS DSO-12 ICE5AR4770AG DIP-7 ICE5AR4780BZS DSO-12 ICE5GR4780AG Motor control ICs Output power 1) 85 VAC~300 VAC Ta=50C ICE5AR0680BZS ICE5GR2280AG ICE5GR1680AG Gate driver ICs Discrete IGBTs WBG semiconductors FF CoolSETTM ICE5AR0680AG 650 V 11.1~5.44 3.42~2.62 DIP-7 ICE3RBR4765JZ DIP-8 ICE3BR4765J DSO-12 800 V 19~21 W DIP-7 DSO-12 23~26 W 30~34 W 1.96~1.71 1.11~1.05 ICE3RBR1765JZ ICE3A1065ELJ ICE3RBR4765JG ICE3BR1765J ICE3A2065ELJ ICE3BR0665J ICE3RBR0665JG ICE3AR4780JZ ICE3AR2280JZ ICE3AR4780VJZ ICE3BR2280JZ ICE3BR0680JZ ICE3AR4780CJZ ICE3AR2280VJZ ICE3AR0680VJZ ICE3AR10080CJZ ICE3AR2280CJZ ICE3AR4780JG ICE3AR2280JG www.infineon.com/coolset 1) Calculated DCM maximum output power in an open-frame design based on Ta=50 C and Tj=125C without copper area as heatsink 169 0.75~0.71 ICE3RBR0665JZ ICE3RBR1765JG ICE3AR1580VJZ 37~41 W ICE3AR1080VJZ ICE3AR0680JZ XENSIVTM sensors RDS(on) max 10~15 W ICE3AR1080JG Packages Output power 1) 85 VAC~300 VAC Ta=50C Microcontrollers 3rd generation fixed frequency CoolSETTM 20-300 V MOSFETs Applications Isolated AC-DC Fixed frequency PWM IC 5th generation ICE5GSAG ICE3AS03LJG 100 kHz 65 kHz -25C~130C Start-up cell Cascode VCC on/off threshold 16 V/10 V 18 V/10.5 V Modulated gate drive 10 ms 20 ms Slope compensation for CCM - Frequency reduction - Integrated error amplifier for direct feedback - Adjustable line Input overvoltage protection with auto restart - Adjustable brown-in protection with auto restart - CS pin short-to-ground protection with auto restart - VCC pin short-to-ground protection (no start-up) - VCC undervoltage protection with auto restart with auto restart VCC overvoltage protection with auto restart with latch-up Overload /open loop protection with auto restart with auto restart with auto restart and hysteresis with latch-up External blanking time extension - with auto restart External protection enable pin - with latch-up Overtemperature protection WBG semiconductors (3 level selectable) Active burst mode Discrete IGBTs 12 ms Frequency jittering Power ICs Soft start time Quasi-resonant PWM IC Feature Package Switching scheme Operating temperature ICE2QS02G DSO-8 DSO-8 ICE2QS03G DSO-8 Novel QR with 10 zero crossing counters QR with 7 zero crossing counters QR with 7 zero crossing counters -25C~130C -40C~129C -25C~130C Cascode - VCC on/off 16 V/10 V 12 V/11 V 18 V/10.5 V active burst mode in QR switching 2-level selectable burst mode entry/exit level - active burst mode 52 kHz Digital frequency reduction for high average efficiency OLP blanking time Fixed Adjustable Fixed Auto restart timer Through VCC charging/discharging Setting with external components Through VCC charging/discharging Maximum input power limitation Vin pin voltage dependent Adjustable through ZC resistor Adjustable through ZC resistor VCC undervoltage protection with auto restart with latch with auto restart Adjustable output overvoltage protection with auto restart with latch with latch - - Brown-out feature - VCC and CS pin short to ground protection - - Home appliances, set-top-box, AUX SMPS AUX power supply to VCC eg. LCD TV multi/main, audio main, PDP TV multi/address Self-power supply to VCC eg. smart meter, industrial applications Adjustable line input overvoltage protection Target application www.infineon.com/acdc 170 ICE5QSAG Startup cell Power saving during standby 500-950 V MOSFETs 125 kHz -40C~129C Gate driver ICs 100 kHz Operating temperature Motor control ICs Switching frequency ICE3BS03LJG DSO-8 Microcontrollers DSO-8 XENSIVTM sensors ICE5ASAG Package Packages FF PWM IC 3rd generation Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Integrated MOSFET QR with 7 zero crossing counters 650 V and 800 V High voltage start-up cell Power saving during standby VCC on/off threshold (typ.) Novel QR with 10 zero crossing counters 800 V 700 V and 800 V Cascode Active burst mode fSW @ 52 kHz 2 level selectable active burst mode quasi-resonant 18 V/10.5 V Adjustable output overvoltage protection 5th generation ICE5QRxxxxAZ/G 18 V/9.85 V with latch 16 V/10 V with auto restart VCC over/undervoltage protection with auto restart with auto restart Overload/open loop protection with auto restart with auto restart Overtemperature protection with auto restart (Auto restart with hysteresis) Adjustable line input overvoltage protection - with auto restart Brown-out - with auto restart CS pin short to ground - with auto restart VCC pin short to ground - DIP-7 DIP-8 DSO-12 (No start-up) DIP-7 DSO-12 DIP-7 DSO-12 www.infineon.com/coolset 171 Packages XENSIVTM sensors Microcontrollers Package Gate driver ICs Switching scheme 2nd generation ICE2QRxx80G-1 Motor control ICs 2nd generation ICE2QRxxxxZ/G Power ICs Quasi-resonant CoolSETTM Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Isolated AC-DC DIP-8 19 W~34 W -40C~129C DIP-7, DSO-12 15 W~41 W -25C~130C -40C~130C Switching frequency 100 kHz Frequency reduction - Integrated error amplifier - Slope compensation for CCM mode - 16 V/10 V 18 V/10.5 V VCC on/off threshold 100 kHz 65 kHz Soft start time 12 ms 20 ms Active burst mode selection 3 level 1 level Auto restart - CS pin short-to-ground protection 65 kHz VCC pin short-to-ground protection No start-up VCC overvoltage protection Auto restart Latch Auto restart Auto restart with hysteresis Latch Auto restart - Latch Overtemperature protection External protection enable pin Adjustable brown-in/-out protection Adjustable line input overvoltage protection - Product available Auto restart Brown-in only - Only ICE5ARxx70AG - Fast AC reset - ICE5AR4770AG ICE5AR4770BZS ICE3A1065ELJ ICE3A2065ELJ ICE3BR4765J ICE3BR1765J ICE3BR0665J www.infineon.com/coolset 1) Calculated 85 VAC~300 VAC DCM maximum output power in an open-frame design based on Ta=50C and Tj=125C without copper area as heatsink 172 14 W~39 W Gate driver ICs 15 W Gen3R ICE3RBRxx65JZ(G) Microcontrollers Operating temperature range DIP-7, DSO-12 Gen3R ICE3BRxx65J ICE3RBR4765JZ ICE3RBR1765JZ ICE3RBR0665JZ ICE3RBR4765JG ICE3RBR1765JG ICE3RBR0665JG XENSIVTM sensors Package Output power range 650V CoolSETTM Gen3 ICE3Axx65ELJ Packages Gen5 ICE5ARxx70AG(BZS) Motor control ICs 700 V CoolSETTM Power ICs Fixed frequency CoolSETTM Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Gen3R ICE3ARxx80JG 11 W~23 W Gen5 ICE5ARxx80AG(BZS) DSO-12 DIP-7 DIP-7, DSO-12 DSO-12 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W -25C~130C 100 kHz/65 kHz -40C~130C 100 kHz -40C~129C 100 kHz 100 kHz 125 kHz - - - - 17 V/10.5 V 16 V/10 V 10 ms 4 level Gen5 ICE5GRxx80AG 12 ms 3 level 4 level Motor control ICs DIP-7 10 W~40 W Gen3R ICE3ARxx80VJZ Gate driver ICs Gen3R ICE3ARxx80CJZ Power ICs 800V CoolSETTM Gen3R ICE3A(B)Rxx80JZ 3 level - Auto restart - No start-up Auto restart Auto restart with hysteresis Auto restart Auto restart - ICE3AR10080CJZ ICE3AR4780CJZ ICE3AR2280CJZ Brown-in only Auto restart Only ICE5ARxx80AG Auto restart ICE5AR0680AG ICE5AR4780BZS ICE5AR0680BZS ICE5GR4780AG ICE5GR2280AG ICE5GR1680AG - ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG ICE3AR4780VJZ ICE3AR2280VJZ ICE3AR1580VJZ ICE3AR1080VJZ ICE3AR0680VJZ Packages - ICE3AR10080JZ ICE3AR4780JZ ICE3AR2280JZ ICE3AR0680JZ ICE3BR2280JZ ICE3BR0680JZ - - Microcontrollers Latch XENSIVTM sensors Auto restart 173 XDPTM SMPS IDP2308 and IDP2303A - digital multi-mode PFC+LLC combo controller Discrete IGBTs WBG semiconductors Support non-AUX operation with the lowest standby performance and start-up cell Support multi-mode PFC operation for optimized efficiency curve Configurable frequency setting for LLC soft-start and normal operation Synchronous PFC and LLC burst mode control with soft-start to prevent acoustic noise Excellent dynamic response by adaptive LLC burst mode Configurable and comprehensive protections for PFC/LLC/IC temp IEC62368-1 certified active X-cap discharge function Flexible IC parameter setting with digital UART interface supports PSU platform approach Target application Major difference Package IDP2308 TV embedded PSU 2nd redundant PFC output overvoltage protection DSO-14 (with enhanced HV creepage distance) IDP2303A Adapter, general SMPS Constant output voltage DSO-16 Gate driver ICs Product Power ICs Key benefits Low BOM count due to high integration of digital control No auxiliary power supply needed Easy design of system schematic and PCB layout Small form factor design Higher system reliability Shorter development cycles and higher design and production flexibility IDP2303A - power adapter Vout Motor control ICs 500-950 V MOSFETs The IDP2303 and IDP2303A are high performance digital combo controllers with integrated drivers and 600 V depletion cell designed for boost PFC and half-bridge LLC targeting switched mode power supplies (SMPS) from 75 W to 300 W. 20-300 V MOSFETs Applications XDPTM digital power SR IC GDO CSO VS HSGD HSVCC HSGND GD1 CS1 Microcontrollers VAC VCC UART www.infineon.com/xdp-smps 174 VCC GND HBFB XENSIVTM sensors HV IDP2303A Packages ZCD Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs IDP2308 - embedded PSU Vout_2 HSGD HSVCC HSGND GD1 CS1 VCC IDP2308 Vbulk HV UART Target applications LCD TV power supply General SMPS Power adapter www.infineon.com/xdp-smps 175 GND Power_on/ standby HBFB Microcontrollers ZCD XENSIVTM sensors VS Packages GDO CSO Motor control ICs VAC Gate driver ICs Vout_1 Applications High frequency, high current, low profile DC-DC converters Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays Iout [A] TDA21472 70 5 x 6 x 0.9 mm PQFN TDA21462 60 5 x 6 x 0.9 mm PQFN www.infineon.com/integrated-powerstages 176 500-950 V MOSFETs WBG semiconductors Package XENSIVTM sensors Part type Discrete IGBTs Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting Input voltage (Vin) range of 4.5 to 15 V VCC and VDRV supply of 4.5 to 7 V Output voltage range from 0.25 up to 5.5 V Output current capability of 70 A Operation up to 1.0 MHz VCC undervoltage lockout (UVLO) 8 mV/C temperature analog output and thermal flag pull-up to 3.3 V Overtemperature protection (OTP) Cycle-by-cycle self-preservation overcurrent protection (OCP) MOSFET phase fault detection and flag Preliminary overvoltage protection (pre-OVP) Compatible with 3.3 V tri-state PWM input Body-BrakingTM load transient support through PWM tri-state Diode emulation mode (DEM) for improved light load efficiency Efficient dual-sided cooling Small 5.0 x 6.0 x 0.9 mm PQFN package Packages Power ICs Features Gate driver ICs Infineon's integrated power stage family contains a synchronous buck gate driver IC which is co-packed with control and synchronous MOSFETs and a Schottky diode to further improve efficiency. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU, ASIC and DDR memory designs. The TDA21472 integrated power stages internal MOSFET current sense algorithm, with integrated temperature compensation, achieves superior current sense accuracy versus best-in-class controller based inductor DCR sense methods. Up to 1.0 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors, while maintaining industry-leading efficiency. The TDA21472 is optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the TDA21472 ideally suited for powering GPU, ASIC, DDR memory, and other high current designs. Motor control ICs 60 A and 70 A with integrated current sense Microcontrollers Non-isolated DC-DC - integrated power stage 20-300 V MOSFETs Applications Non-isolated DC-DC Applications Non-isolated DC-DC Part type Iout [A] Package TDA21475 70 5 x 6 x 0.6 mm PQFN www.infineon.com/integrated-powerstages 177 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Gate driver ICs Motor control ICs Microcontrollers XENSIVTM sensors Features Co-packaged driver, high-side and low-side MOSFETs 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting Input voltage (VIN) range of 4.25 to 16 V VCC and VDRV supply of 4.25 to 5.5 V Output voltage range from 0.25 up to 5.5 V Output current capability of 70 A Operation up to 1.5 MHz VCC/VDRV undervoltage lockout (UVLO) Bootstrap capacitor undervoltage protection 8 mV/C temperature analog output Thermal shutdown and fault flag Cycle-by-cycle over current protection with programmable threshold and fault flag MOSFET phase fault detection and flag Auto replenishment of bootstrap capacitor Deep-sleep mode for power saving Compatible with 3.3 V tri-state PWM input Body-BrakingTM load transient support Small 5 x 6 x 0.65 mm PQFN package Lead-free RoHS compliant package Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET Packages Infineon's TDA21475 exposed-top power stage contains a low quiescent-current synchronous buck gatedriver IC co-packaged with high-side and low-side MOSFETs. The package is optimized for PCB layout, heat transfer, driver/ MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The gate driver and MOSFET combination enables higher efficiency at the lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The TDA21475 internal MOSFET current sense algorithm with temperature compensation achieves superior current sense accuracy versus best-in-class controller-based inductor DCR sense methods. Protection includes cycle-by-cycle over current protection with programmable threshold, VCC/VDRV UVLO protection, bootstrap capacitor undervoltage protection, phase fault detection, IC temperature reporting and thermal shutdown. The TDA21475 also features auto replenishment of the bootstrap capacitor to prevent overdischarging. The TDA21475 features a deep-sleep power saving mode, which greatly reduces the power consumption when the multiphase system enters PS3/PS4 mode. Operation at switching frequency as high as 1.5 MHz enables high performance transient response, allowing reduction of output inductance and output capacitance while maintaining industry-leading efficiency. The TDA21475 is optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the TDA21475 ideally suited for powering GPU and DDR memory designs. 20-300 V MOSFETs 70 A with exposed top for improved thermal performance Applications Non-isolated DC-DC Applications General purpose POL DC-DC converters Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays Part type Iout [A] Package IR35401 20 4 x 5 x 0.9 mm PQFN www.infineon.com/integrated-powerstages 178 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Gate driver ICs Motor control ICs Integrated driver, control MOSFET and synchronous MOSFET Integrated bootstrap synchronous PFET Inductor DCR current sensing with temperature compensation Input voltage (VIN) range from 4.25 to 16 V VCC supply of 4.25 to 5.5 V Output voltage range from 0.5 to 3 V or up to 5.5 V if the internal current sense amplifier is not used Local lossless inductor current sensing with improved noise immunity and accuracy Single reference based current reporting output Output current capability of 20 A Operation up to 1.5 MHz VCC undervoltage lockout Over-temperature and VCC UVLO fault communication to controller via TOUT pin Compatible with 3.3 V tri-state PWM Input Body-BrakingTM load transient support through PWM tri-state Auto-replenishment on BOOST pin Low operating quiescent current and <100 A when disabled Small 4 x 5 x 0.9 mm PQFN package Lead-free RoHS compliant package Microcontrollers XENSIVTM sensors Features Packages Infineon's IR35401 integrated power stage contains a synchronous buck gate driver IC, which is co-packaged with control and synchronous MOSFETs and Schottky diode to further improve efficiency. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gatedriver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The IR35401 power stage features an integrated current sense amplifier to achieve superior current-sense accuracy against best-in-class controller-based inductor DCR sense methods while delivering the clean and accurate current report information. The protection features inside IR35401 include VCC UVLO and thermal flag. IR35401 also features an auto replenishment of bootstrap capacitor to prevent the bootstrap capacitor from overdischarging. The IR35401 supports deep-sleep mode and consumes <100 A VCC bias current when the EN pin is pulled low. Up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry-leading efficiency. When combined with Infineon's digital controllers, the IR35401 incorporates the Body-BrakingTM feature through PWM tri-state which enables reduction of output capacitors. The IR35401 is optimized for low current CPU rails in server applications. The ability to meet the stringent requirements of the server market also makes the IR35401 ideally suited for powering GPU and DDR memory rails. 20-300 V MOSFETs 20 A with integrated current sense Applications Non-isolated DC-DC Part type Iout [A] Package 25 4 x 4 x 1 mm PQFN 35 4 x 4 x 1 mm PQFN TDA21240 40 4 x 4 x 1 mm PQFN www.infineon.com/integrated-powerstages 179 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Packages XENSIVTM sensors TDA21242 TDA21241 Gate driver ICs Applications Desktop and server VR buck converter Single Phase and multiphase POL CPU/GPU regulation in notebook, desktop graphics cards, DDR memory, graphic memory High power density voltage regulator modules (VRM) Qualified for DC-DC industrial applications based on JEDEC (JESD47, JESD22, J-STD20) General purpose POL DC-DC converters Motor control ICs Features For synchronous buck converter step down voltage applications Maximum average current of 40 A Input voltage range +4.5 V to +16 V Power MOSFETs rated 25 V Fast switching technology for improved performance at high switching frequencies (> 500 kHz) Remote driver disable function Includes bootstrap diode Undervoltage lockout Shoot through protection +5 V high side and low side MOSFETs driving voltage Compatible to standard +3.3 V PWM controller integrated circuits Tri-state PWM input functionality Small package: PG-IQFN-30-2 (4 x 4 x 1 mm) RoHS compliant Thermal warning Microcontrollers Infineon's TDA21240 powerstage is a multichip module that incorporates Infineon's premier MOSFET technology for a single high-side and a single low-side MOSFET coupled with a robust, high performance, high switching frequency gate driver in a single PG-IQFN-30-2 package. The optimized gate timing allows for significant light load efficiency improvements over discrete solutions. When combined with Infineon's family of digital multi-phase controllers, the TDA21240 forms a complete core voltage regulator solution for advanced micro and graphics processors as well as point-of-load applications. 20-300 V MOSFETs 25 A, 35 A, 40 A power stages Infineon's digital multiphase and multirail controllers provide power for today's medium and high current POL applications used in telecom/datacom, server, and storage environments. Infineon's digital controller family enables OEMs and ODMs to improve efficiency and total cost of ownership, while increasing power density and optimizing the total system footprint of the voltage regulator. The products highlighted in the table below represent our fifth generation digital controller family and support up to two rails with 1-6 phases on individual rails. The I2C/PMBusTM interface connects the digital controllers to the application system and provides real time telemetry information, monitoring and control capabilities. The digital controllers are fully configurable through our PowerCodeTM and PowerClientTM graphical user interfaces that allows for easy to use and simplified design optimization. Multi-phase configurations are supported for best power optimization IR35212 Main 7 ph 7 ph Subconfigurations 6+1 6+1 2.5 V 3.3 V 3.04 V Vout_max XDPE10280B Dual rail Dual/single rail Dual/single rail XDPE10281B IR35204 IR35201 8 ph 8 ph 4 ph 8+0, 6+2, 4+4 8+0, 6+2, 4+4 3+1 3.04 V 3.3 V 3.3 V Dual rail IR35223 XDPE132G5C 8 ph 10 ph 16 ph 8+0, 7+1, 6+2 10+0, 5+5 8+8 3.3 V 3.3 V Up to 2 MHz Up to 2 MHz Switching frequency Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Operating temperature range - 5C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 120C VQFN package 48-lead (6x6) 0.4 mm pitch 48-lead (6x6) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 40-lead (5x5) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 48-lead (6x6) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch Typical application Intel server, high end desktop Intel server, workstation, high end desktop Intel server, workstation, high end desktop AMD server, workstation, high end desktop AMD server, memory and SOC AMD server, CPU Phase redundant based server systems AMD server, GPU, ASIC, networking ASSP www.infineon.com/digital-controller 180 Packages XENSIVTM sensors Microcontrollers Advantages of a digital controller Protection features include a set of sophisticated overvoltage, undervoltage, overtemperature, and overcurrent protections. Each of the controllers in the table above also detect and protect against an open circuit on the remote sensing inputs. These attributes provide a complete and advanced protection feature set for microprocessor, DSP, FPGA or ASIC power systems. Accurate current sense telemetry is achieved through internal calibration that measures and corrects current sense offset error sources upon start-up. Programmable temperature compensation provides accurate current sense information even when using DCR current sense. Discrete IGBTs PXE1610C PMBusTM Dual/single rail Dual/single rail Power ICs Phase configuration Dual rail Gate driver ICs Part number Controller family Dual rail Motor control ICs Feature Configurable output rails 500-950 V MOSFETs Point-of-load power management WBG semiconductors Digital controllers 20-300 V MOSFETs Applications Non-isolated DC-DC Applications Non-isolated DC-DC 20-300 V MOSFETs Typical multiphase application circuit 12 V SW PWM TDA21472 CVCC1 RCSM 12 V VCC VIN TOUT /FLT PWM2 VINSEN 13K RVIN1_2 ISEN2 1K L2 PGND GATEL LGND CVCC2 VGD IRTN2 10nF ZCD_EN# VRDY1 VRDY2 12V VIN_1 TDA21472 IOUT REFIN RVIN1_1 SW PWM VCC VSEN VRTN BOOST Cboost2 1uF CVIN2 VDRV 3.3 V WBG semiconductors CVDRV1 Discrete IGBTs Rseries LGND VGD IRTN1 CCS LOAD GATEL VCC ISEN1 RCSP RS2 REFIN V_CPU_L1 PGND VDRV IR3584 ZCD_EN# IOUT L1 CVDRV2 PWM IOUT 10nF REFIN ISEN3 V CPU Serial Bus V 3.3V SV_ALERT# SV_DIO SV_CLK SW TDA21472 GATEL LGND CVCC3 VGD IRTN3 L3 PGND Power ICs 1K PWM3 CVIN3 VDRV SM_ALERT#/ VINSEN2/PSI#1 13K BOOST VIN TOUT /FLT RVIN2_1 RVIN2_2 Cboost3 ZCD_EN# 12V VIN_2 SM_CLK VCC If pin is configured for SM_ALERT V I2C Bus I2C Bus V 12 V SM_DIO 500-950 V MOSFETs VIN TOUT /FLT PWM1 BOOST Cboost1 CVIN1 CVDRV3 1K VRHOT_ICRIT# SW PWM GATEL LGND CVCC4 VGD IRTN4 CVDRV4 CFILT 12 V 1uF REFIN CCS ISEN1_L2 RCSM_L2 VGD IRTN1_L2 TSEN VSEN_L2 V_CPU_L2 GATEL LGND LOAD CVCC5 CVDRV5 13K 10nF13K VRTN_L2 PGND ADDR_PROT 1K 10nF XENSIVTM sensors RS2 Rseries L4 VDRV IOUT CVIN_L2 SW TDA21472 VCC PWM ZCD_EN# PWM1_L2 BOOST VIN Cboost5 TOUT /FLT RCSP_L2 Motor control ICs ISEN4 L4 PGND VDRV REFIN SV_ADDR TDA21472 VCC IOUT Microcontrollers PWM4 BOOST TOUT /FLT ZCD_EN# V V EN EN_L2/INMODE/ CAT_FLT VIN Cboost4 From System Gate driver ICs 12 V CVIN4 Packages GND 181 Applications LED driver ICs Features and benefits Secondary-side constant voltage or constant current control PFC in CrCM mode during nominal load and DCM mode in low-load condition down to 0.1 percent for operation without audible noise High-power quality with PF > 0.96, THD < 10 percent Highest efficiency of up to 95 percent due to resonant topology Allows secondary-side IC dimming down to 1 percent PFC/LLC combo IC allows the best matching of PFC stage and LLC stage timing control Supports a wide input voltage range from 90-305 V Ultrafast time to light < 200 ms Complete set of protection features including external thermal protection Type Description Ordering code ICL5101 Resonant controller with PFC SP001213622 EVALLEDICL5101E1 PFC/LLC evaluation board 110 W SP001296078 www.infineon.com/icl5101 182 Packages Order information for ICL5101 XENSIVTM sensors Microcontrollers Motor control ICs Typical application schematic WBG semiconductors The ICL5101 integrates a half-bridge controller with a PFC stage in a single package. The high level of integration assures a low count of external components, enabling small form factor designs and making them ideal for compact power supplies in lighting applications, such as LED driver. All operation parameters of the IC are adjustable by simple resistors, which makes them a perfect choice for affordable and reliable configuration. A comprehensive set of protection features including an adjustable external overtemperature protection and capacitive load protection, ensures the detection of fault conditions to increase the system safety. Discrete IGBTs ICL5101- resonant controller with PFC for LED driver Power ICs Infineon's innovative multi-mode LED driver ICs deliver high efficiency, high power factor and low harmonics to LED lighting applications, while supporting dimming levels down to one percent. The high level of integration simplifies designs by reducing the need for external components. The XDPTM digital power technology supports quick design and simplifies logistics handling, hence saving effort and cost. Gate driver ICs Professional lighting 500-950 V MOSFETs 20-300 V MOSFETs LED driver ICs for general lighting Applications LED driver ICs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Features and benefits Small form factor LED driver and low BOM The high level of integration assures a low count of external components, enabling small form factor designs and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor and outdoor applications High performance, digital PFC and advanced HB driver The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and DCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1 percent of the nominal power without audible noise Fast time-to-light and low standby With start-up current of less than 100 A the controller provides very fast time-to-light within less than 300 ms, while standby the controller changes into active burst mode which reduces power consumption to less than 300 mW Safety first The controller has a comprehensive set of protection features built in to increase the system safety. It monitors in the run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC and/or inverter, output overvoltage, overtemperature and capacitive load operation 20-300 V MOSFETs ICL5102 - High performance PFC + resonant controller for LCC and LLC Order information for ICL5102 Description ICL5102 PFC and resonant controller for LCC and LLC Ordering code SP002224374 EVAL-ICL5102-U130W-CC PFC/LLC-CC constant current evaluation board 130 W LED driver SP001667160 www.infineon.com/icl5102 183 Packages XENSIVTM sensors Type Microcontrollers Motor control ICs Gate driver ICs Power ICs Typical application schematic Supports AC and DC input Nominal input voltage range 90-305 VAC or 120-350 VDC Integrated 600 V start-up cell Power factor > 0.9 and THD < 15 percent over wide load range Highly accurate primary side control output current typ. 3 percent Reference board efficiency > 90 percent Internal temperature guard with adaptive thermal management Multimode operation - QRM (quasi-resonant mode) - DCM (discontinuous conduction mode) - ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected - Undervoltage - Overvoltage - Open load - Output shorted Gate driver ICs Features and benefits Constant current with primary side regulation 500-950 V MOSFETs The XDPL8105 is a digital, single-stage flyback controller with high power factor for constant current LED driver. The device offers versatile functions for different indoor and outdoor lighting applications. The IC is available in a DSO-8 package and it provides a wide feature set, requiring a minimum of external components. The advanced control algorithms in the digital core of the XDPL8105 provide multimode operation for high efficiency. Configurable parameters allow last minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver device for diverse use cases. WBG semiconductors XDPL8105 - digital flyback controller IC for LED driver Discrete IGBTs The IC family XDPTM is the first all-in-one package solutions combining a digital controller with key power peripherals. Such integration provides exceptional flexibility and performance. The XDPTM family addresses essential features for advanced LED driver. Power ICs XDPTM LED 20-300 V MOSFETs Applications LED driver ICs Typical application schematic 85 ...305 VAC Output Optional VCC VCC CoolMOSTM HV ZCD GD XDPL8105 Microcontrollers regulator CS Motor control ICs Iout Order information for XDPL8105 Type Description Ordering code XDPL8105 Digital flyback controller IC SP001639446 REF-XDPL8105-CDM10V 40 W reference design with CDM10V isolated 0 V-10 V dimming interface SP001649474 www.infineon.com/xdpl8105 184 Packages GND XENSIVTM sensors R_CS Multimode operation - QRM (quasi-resonant mode) - DCM (discontinuous conduction mode) - ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected - Undervoltage - Overvoltage - Open load - Output shorted 500-950 V MOSFETs Power ICs Features and benefits Constant current with primary side regulation Supports AC and DC input Nominal input voltage range 90-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range Standby power < 100 mW Internal temperature guard with adaptive thermal management WBG semiconductors The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with high power factor and high precision primary side controlled constant current output. The IC is available in a DSO-8 package and it provides a wide feature set, which requires only a small number of external components. Sophisticated algorithms provide flicker-free dimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves functional safety, while configurable parameters allow last minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver for a large set of use cases. Discrete IGBTs XDPL8210 - digital flyback constant current controller IC for LED driver with 1 percent dimming 20-300 V MOSFETs Applications LED driver ICs Typical application schematic 90 ...305 VAC Output Optional VCC Gate driver ICs Iout regulator ZCD GD PWM XDPL8210 CS Microcontrollers VCC CoolMOSTM HV Motor control ICs CVCC RCS Type Description Ordering code XDPL81210* Digital flyback constant current controller IC SP001643692 REF-XDPL8210-U35W 35 W reference design with CDM10V isolated 0 V-10 V dimming interface SP001886070 www.infineon.com/xdpl8210 * coming Q1/2019 185 Packages Order information for XDPL8210 XENSIVTM sensors GND Embedded digital filters Multimode operation - QRM (quasi-resonant mode) - DCM (discontinuous conduction mode) - ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected - Undervoltage - Overvoltage - Open load - Output shorted 500-950 V MOSFETs Power ICs Wide input voltage range Constant voltage with secondary side regulation Supports AC and DC input Nominal input voltage range 100-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range Standby power < 100 mW Internal temperature guard with adaptive thermal management Brown-out and brown-in protections WBG semiconductors The XDPL8218 is a digital, highly integrated, future-proof device combining a constant voltage quasi-resonant flyback controller with algorithms for high power factor and low THD. The main application field for XDPL8218 are dual stage designs with a DC-DC stage at secondary side and XDPL8218 as primary side. The device manages wide load ranges and reacts fast and stable to dynamic load changes. The digital core of the XDPL8218 enables high efficiency over full output power range, multimode operation with quasi-resonant switching at high power, discontinuous conduction mode frequency reduction at medium power and active burst mode at low power. The XDPL8218 is available in a DSO-8 package. Discrete IGBTs XDPL8218 - high power factor constant voltage flyback IC with secondary side regulation 20-300 V MOSFETs Applications LED driver ICs Output Input CS XDPL8218 RCS GND FB Feedback circuit Order information for XDPL8218* Type Description Ordering code XDPL8218* Digital flyback CV-output controller IC SP001707258 REF-XDPL8218-U40W 40 W reference board with replaceable feedback circuit SP001710980 www.infineon.com/xdpl8218 * coming Q1/2019 186 Microcontrollers GD HV XENSIVTM sensors ZCD Packages CoolMOSTM VCC Motor control ICs CVCC Gate driver ICs Typical application schematic Features and benefits Constant current, constant voltage, limited power with primary side regulation PWM dimming input controls respective analog output current Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range Multimode operation - QRM (quasi-resonant mode) - DCM (discontinuous conduction mode) - ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected - Undervoltage - Overvoltage - Open load 500-950 V MOSFETs Power ICs Nominal input voltage range 100-305 VAC or 90-430 VDC Standby power < 100 mW Internal temperature guard with adaptive thermal management WBG semiconductors The XDPL8220 simplifies for the lighting industry to realize essential features for smart lighting and increases the benefits to the end user and the luminaire manufacturers. The XDPL8220 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC plus a quasi-resonant flyback digital controller with primary side regulation. The multi control features - constant voltage, constant current, and limited power - enable a highly versatile LED driver (e.g. window LED driver). The main application field of the XDPL8220 is advanced dual stage LED driver for indoor or outdoor lighting. The IC is available in a DSO-16 package. Discrete IGBTs XDPL8220 - digital dual stage multi-mode flyback controller for CC, CV, LP with primary side regulation 20-300 V MOSFETs Applications LED driver ICs Gate driver ICs Typical application schematic DPFC LED+ SPFC GDF N EM P CSF LED- XDPL8220 R_NTC V VC S ZC Motor control ICs Input voltage CoolMOSTM CoolMOSTM L PW M PW M GND Vsupply Order information for XDPL8220 Type Description Ordering code XDPL8220 Digital dual stage multimode flyback Controller for CC, CV, LP SP001398160 REF-XDPL8220-U30W 30 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630060 REF-XDPL8220-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630066 REF-XDPL8220-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630068 www.infineon.com/xdpl8220 187 XENSIVTM sensors UART Packages ART Microcontrollers GN The UART interface and the command set enable to control the function of the XDPL8221 or inquire status information Multimode operation - QRM (quasi-resonant mode) - DCM (discontinuous conduction mode) - ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected - Undervoltage - Overvoltage - Open load - Output shorted 500-950 V MOSFETs WBG semiconductors Features and benefits Nominal input voltage range 100-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range UART Interface for control and real-time monitoring Constant current, constant voltage, limited power with primary side regulation 1 percent dimming Dim-to-off with low standby power < 100 mW Internal temperature guard with adaptive thermal management Discrete IGBTs The XDPL8221 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC with a quasi-resonant flyback controller with primary side regulation. A serial communication interface supports direct communication with an external microcontroller unit (MCU). The XDPL8221 is especially designed for advanced LED driver in smart lighting or IoT applications, featuring flicker-free dimming down to 1 percent of nominal current. The device enables customizable LED driver and simplifies the generation and maintenance of different variants without increasing the number of stock keeping units. The IC is available in a DSO-16 package. Power ICs XDPL8221 - digital dual stage multi-mode flyback controller for CC, CV, LP with 1 percent dimming and serial interface 20-300 V MOSFETs Applications LED driver ICs Typical application schematic Gate driver ICs L Input voltage GDPFC LED+ CSPFC TEMP CSFB LED- XDPL8221 HV VCC VS ZCD Motor control ICs GDFB N R_NTC PWM Vsupply GND Order information for XDPL8221* Type Description Orderable part number XDPL8221* Digital dual stage multimode flyback Controller for CC, CV, LP with 1 percent dimming XDPL8221XUMA1 REF-XDPL8221-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U50WTOBO1 REF-XDPL8221-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U100WTOBO1 www.infineon.com/xdpl8221 * coming Q1/2019 188 XENSIVTM sensors UART PWM Packages UART Microcontrollers GND Features and benefits Supports an optocoupler feedback loop to primary side minimizing power losses Suppresses the voltage ripple of the power supply driving a constant LED current for hight light quality The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs Supports wide current range depending on external driver transistor Supply voltage range up to 60 V Gate driver current 10 mA LED current can be adjusted by Rset functionality Overtemperature protection and adjustable overvoltage protection Power ICs 500-950 V MOSFETs The BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor. The device supports either NPN bipolar transistors or N-channel MOSFETs to cover a wide LED current and power range up to several hundred milliamperes. The BCR601 provides feedback to the primary side via an optocoupler to control the output voltage of the primary side converter, e.g. a flyback. The control loop minimizes the voltage overhead and power dissipation of the external driver transistor. The voltage overhead can be adjusted by external configuration according to applications needs. WBG semiconductors 60 V linear LED controller IC with voltage feedback loop to primary side Discrete IGBTs Linear current regulators 20-300 V MOSFETs Applications LED driver ICs Typical application schematic Cin ROVP2 Gate driver ICs ROVP1 COVP RZENER CDROP RDROP Motor control ICs Controller IC e.g. XDPL8218 ROPTO OVP COPTO VDROP ZD1 VS DRV BCR601 VSENSE Rsense RPI CPI Order information for BCR601 Type Description Ordering code BCR601 60 V linear LED controller IC with voltage feedback to primary side SP001681722 DEMO_BCR601_60V_IVCTRL Demonstration board BCR601 current and voltage control, 500 mA SP002798056 www.infineon.com/bcr601 189 Microcontrollers MFIO Rset N-channel MOSFETs e.g. OptiMOSTM BSP716N XENSIVTM sensors GND Packages DAC/MCU e.g. XMC1200 OPTO Applications LED driver ICs 20-300 V MOSFETs 60 V linear LED controller IC for dimmable LED applications 500-950 V MOSFETs The BCR602 is a linear LED controller IC regulating the LED current with an external driver transistor. The BCR602 supports either NPN bipolar transistor or N-channel MOSFETs to cover a wide LED current and power range up to several amperes. The LED current is fully scalable by dimensioning an external current sense resistor. Discrete IGBTs WBG semiconductors Features and benefits Suppresses the voltage ripple of the power supply dring a constant LED current for high light quality The LED current can be dimmed by resistors as well as analog or digital PWM voltages connected to the multifunction input-output (MFIO) pin The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs Supports wide current range depending on external driver transistor Supply voltage range up to 60 V makes it ideal for 48 V designs Gate driver current 10 mA LED current can be adjusted by Rset functionality Overtemperature protection Power ICs Typical application schematic N-channel MOSFETs e.g. OptiMOSTM BSP716N VS DRV R1 MFIO Rset DAC PWM Order information for BCR602 Type Description Ordering code BCR602 60 V linear LED controller IC SP001681730 DEMO_BCR602_60V_IVCTRL Demonstration board BCR602U current control, 200 mA SP002798054 www.infineon.com/bcr602 190 Microcontroller e.g. XMC1200 V Microcontrollers VSENSE Motor control ICs BCR602 XENSIVTM sensors GND Packages Controller IC e.g. XDPL8218 Gate driver ICs Rpred Applications LED driver ICs Needing more details on replacing resistors? The advantage versus discrete semiconductors is: Reduced part count and assembly effort Pretested output current Defined negative temperature co-efficient protection Take a look at the application note "Driving low power LEDs from 10 to 65 mA LED driver ICs with BCR401W and BCR402W family" Discrete IGBTs The advantage over resistor biasing is: Long lifetime of LEDs due to constant current in each LED string Homogenous LED light output independent of LED forward voltage binning, temperature increase and supply voltage variations WBG semiconductors 500-950 V MOSFETs The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for driving low power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior. 20-300 V MOSFETs BCR40x linear LED Driver ICs for low power LEDs Power ICs Features and benefits: Output current from 10 to 100 mA (adjustable by external resistor) Supply voltage up to 18 V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U, BCR430U) Reduction of output current at high temperature, contributing to long lifetime LED systems Ease of use Very small form factor packages with up to 750 mW max. power handling capability Low-power LED driver ICs (5-100 mA) Group Topology Vs (min.) [V] Vs (max.) [V] Iout (typ.) [mA] Iout (max.) [mA] Dimming Package Ptot (max.) [ mW] BCR401U LED drivers for low-power LEDs Linear 1.4 40 10.0 65 PWM by ext. transistor SC74 750 BCR401W LED drivers for low-power LEDs Linear 1.2 18 10.0 60 PWM by ext. transistor SOT343 500 LED drivers for low-power LEDs Linear 1.4 40 20.0 65 PWM by ext. transistor SC74 750 LED drivers for low-power LEDs Linear 1.4 18 20.0 60 PWM by ext. transistor SOT343 500 BCR405U LED drivers for low-power LEDs Linear 1.4 40 50.0 65 PWM by ext. transistor SC74 750 BCR430U NEW LED driver for low-power LEDs Linear 6 42 Defined by Rset 100 PWM by ext. transistor SOT23 600 Motor control ICs BCR402U BCR402W Gate driver ICs Type NEW: Ultralow voltage drop version BCR430U with only 135 mV at 50 mA LED current versus voltage drop (VS = 24 V) 90 70 60 Rset = 6.2 k Rset = 9.1 k 50 40 30 100 150 www.infineon.com/bcr 191 200 250 Vdrop [mV] 300 350 400 Packages ILED [mA] 80 XENSIVTM sensors The voltage drop at the integrated LED driver stage can go down to 135 mV at 50 mA and less improving the overall system efficiency and providing extra voltage headroom to compensate for tolerances of LED forward voltage or supply voltage. With the BCR430U, additional LEDs can be added to lighting designs without changing the supply voltage. 100 Microcontrollers 110 BCR32x/BCR42x/BCR450/BCR601/BCR602 linear LED driver and controller ICs for medium and high power LEDs 500-950 V MOSFETs The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5 W LEDs with a maximum output current of 250 mA. They are optimized in terms of cost, size and feature set for medium power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior. 20-300 V MOSFETs Applications LED driver ICs WBG semiconductors Features and benefits Output current from 10 mA up to 300 mA for BCR32x (200 mA for BCR42xU), adjustable by external resistor Supply voltage up to 40V for BCR42x (24 V for BCR32x) Direct microcontroller interface for PWM dimming with BCR321U/BCR421U Reduction of output current at high temperature, contributing to long lifetime LED systems Ease of use Very small form factor packages with up to 1000 mW max. power handling capability Iout (typ.) [mA] Iout (max.) [mA] LED drivers for mid-power LEDs BCR321U LED drivers for mid-power LEDs BCR420U Linear 1.4 24 250 Linear 1.4 24 250 LED drivers for mid-power LEDs Linear 1.4 40 BCR421U LED drivers for mid-power LEDs Linear 1.4 40 BCR450 LED controller Linear 3.0 BCR601 LED controller Linear 8.0 BCR602 LED controller Linear 8.0 Package Ptot (max.) [ mW] 300 No SC74 1000 300 Digital input SC74 1000 150 200 No SC74 1000 150 200 Digital input SC74 1000 27 70 Ext. switch Digital input SC74 500 60 Ext. switch Ext. switch Analog PG-DSO-8 360 60 Ext. switch Ext. switch Analog/PWM PG-SOT23-6 360 VS Motor control ICs + - Dimming RSENSE (optional) Von: BCR320 BCR420 Von: BCR321 BCR421 www.infineon.com/bcr 192 Power ICs Vs (max.) [V] Gate driver ICs Vs (min.) [V] Microcontroller Microcontrollers BCR320U Topology XENSIVTM sensors Group Packages Type Discrete IGBTs Medium- and high-power LED driver ICs Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for the use together with microcontrollers. Precise output current accuracy from device to device under all loads and input voltages conditions makes it perfect for tunable white and flat panel designs where current must be identical string to string. Wide input voltage ranging from 8-80 VDC Up to 1.5 A average output current, adjustable via shunt resistor Efficiency > 95 percent Up to 2 MHz switching frequency Soft-start PWM dimming input, with 250 Hz to 20 kHz PWM dimming frequency Hybrid dimming for flicker free light down to 0.5 percent - Analog dimming 100 percent - 12.5 percent - PWM dimming 12.5 percent - 0.5 percent with 3.4 kHz flicker-free modulation, dim-to-off Typical 3 percent output current accuracy Overtemperature protection Pull-down transistor to avoid LED glowing in dim-to-off DSO-8 package to enable wave soldering DSO-8 with exposed pad for higher thermal performance (ILD8150E) BOOT DIM 500-950 V MOSFETs Motor control ICs Features and benefits WBG semiconductors The hysteretic current control provides an extremely fast regulation and stable LED current combined with good EMI performance. The efficiency of the LED driver IC is remarkably high, reaching more than 95 percent efficiency over a wide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from 100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz. Discrete IGBTs The ILD8150 is 80 V DC-DC converter IC, designed to be used in LED applications to drive high power LEDs. For applications operating close to safe extra low voltage (SELV) limits, it provides a high safety voltage margin. The buck LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side integrated switch. Several performance and protection features provide the right fit for professional LED lighting. Power ICs ILD8150/ILD8150E* - 80 V DC-DC buck LED driver IC for high-power LEDs and high-performance hybrid dimming Gate driver ICs DC-DC switch mode LED driver ICs 20-300 V MOSFETs Applications LED driver ICs SW SD VCC 80 V GND Type ILD8150 Description 80 V DC-DC buck LED driver IC Package DSO-8 ILD8150E 80 V DC-DC buck LED driver IC SP001805686 DSO-8 exposed pad REF_ILD8150_DC_1.5A Reference design board 1.5 A SP002798058 Board with ILD8150E www.infineon.com/lowcostleddriver * coming Q2/2019 193 Ordering code SP001805682 XENSIVTM sensors CS Packages VIN Microcontrollers ILD8150/ILD8150E Type Vs (min.) Vs (max). [V] [V] Iout (typ.) [mA] Iout (max.) [mA] Package Superior adjustable overtemperature protection for ILD6150 and ILD6070 contributing to longer LED lifetime Overvoltage and overcurrent protection ILD1151 supports boost, buck-boost and SEPIC topologies Dimming Topology fsw Features SSOP-14 Analog/digital Boost, buckboost SEPIC Adjustable 100 kHz-500 kHz Multi topology controller, constant current or constant voltage mode, overvoltage, overcurrent, short on GND protection Selectable 700 by resistor DSO-8 exposed pad Digital output Hysteretic buck 1 MHz Integrated switch rated up to 700 mA, PWM or analog dimming input, adjustable overtemperature protection, overcurrent protection 60 Selectable 1.500 by resistor DSO-8 exposed pad Digital output Hysteretic buck 1 MHz Integrated switch rated up to 1.500 mA, PWM or analog dimming input, adjustable overtemperature protection, overcurrent protection 8 80 Selectable 1.500 by resistor DSO-8 Hybrid (analog down to 12% and PWM down to 0,5%)dimming output Hysteretic buck 2 MHz Integrated 80 V switch rated up to 1.500 mA with low RDS(on), hybrid dimming down to 0.5%, UVLO, thermal protection, digital soft-start, flicker-free operation 8 80 Selectable 1.500 by resistor DSO-8 exposed pad Hybrid (analog down to 12% and PWM down to 0,5%) dimming output Hysteretic buck 2 MHz Integrated 80 V switch rated up to 1.500 mA with low RDS(on), hybrid dimming down to 0.5%, UVLO, thermal protection, digital soft-start, flicker-free operation 4.5 45 90 ILD6070 4.5 60 ILD6150 4.5 ILD8150* ILD8150E* 3.000 500-950 V MOSFETs Microcontrollers ILD1151 WBG semiconductors Discrete IGBTs Features and benefits Wide input voltage range up to 80 V Scalability in output current from 90 mA up to multiple amperes Alternative dimming concepts: digital or analog Hybrid dimming: analog and digital output combined for flicker free light down to 0.5 percent realized with ILD8150 Power ICs The ILD series are switch mode LED driver ICs for high power LEDs. They combine protection features that contribute to the lifetime of LEDs with the flexibility in output current range up to multiple amperes. The new ILD series include LED driver ICs with integrated power stage, as well as with external MOSFET achieving up to 98 percent driver efficiency across a wide range of general lighting applications. Gate driver ICs ILD series DC-DC switch mode LED driver ICs Motor control ICs DC-DC switch mode LED driver ICs 20-300 V MOSFETs Applications LED driver ICs www.infineon.com/ild * coming Q2/2019 194 Packages XENSIVTM sensors (optional for soft start) 195 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications PWM input One-time configurable device: CDM10V and preconfigured devices with various feature sets Product type Granular portfolio for highest flexibility and easy design-in Wide input VCC range 11-25 V, extended range down to 6 V for CDM10V Attractive pricing and faster time to market Iout [mA] 5 Min. duty cycle [%] 1/2/5/10 PWM output frequency [kHz] 0.2/0.5/1/2 Dimmer/resistor bias current [A] 50/100/200/500 Disabled/enabled CDM10VXTSA1 SP001424754 CDM10V-2 5 n.a. 1 200 Enabled CDM10V2XTSA1 SP001684884 CDM10V-3 5 1 1 200 Disabled CDM10V3XTSA1 SP001715882 CDM10V-4 5 n.a. 2 100 Enabled CDM10V4XTSA1 SP001727960 CDM10VD 5 5 1 120 Enabled CDM10VDXTSA1 SP001619792 CDM10VD-2 5 10 1 120 Enabled CDM10V2DXTSA1 SP001619794 CDM10VD-3 1 5 1 120 Enabled CDM10V3DXTSA1 SP001619796 CDM10VD-4 1 10 1 120 Enabled CDM10V4DXTSA1 SP001630006 CDM10V Dimm-to-Off OPN Description SP number Board name COOLDIM_PRG_BOARD Configuration board for CDM10V only SP number SP001493166 REF-XDPL8220-U30W 30 W two stage PFC FB digital power, efficient and flicker free reference design with CDM10V SP001630060 REF-XDPL8105-CDM10V 40 W single stage PFC FB digital power reference design with CDM10V SP001649474 Typical application schematic using CDM10V 85- 305 V AC Linefilter CDM10V ICL8105 VCC supply 11-25 V VCC LDO Rdim+ Bandgap 0-10 V interface Resistor/potentiometer PWM-generator 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Key features Key benefits Active dimming (0-10 V) and passive dimming (resistor) Single-device solution leading to low BOM and PCB savings Embedded digital signal processing which maintains Dimming ICs in small SOT-23 package for high power density designs minimum variations from device to device Gate driver ICs Infineon's CDM10V and CDM10VD are the industry's first single-chip lighting interface ICs. They are capable of transforming an analog 0-10 V input into a PWM or dimming input signal, required by a lighting controller IC. CDM10V and CDM10VD devices are dedicated for commercial and industrial LED lighting applications. The compact and highly integrated devices allow designers to replace up to 25 discrete components, used in conventional 0-10 V dimming schemes, with a single device. Supplied in an ultra-miniature 6-pin SOT package, the CDM10Vx and CDM10VDx perfectly match small PCBs with high component densities. Motor control ICs Infineon's fully integrated dimming solutions Microcontrollers CDM10V and CDM10VD - most flexible dimming interface ICs for 0-10 V 20-300 V MOSFETs Applications Dimming solution UVLO GND ADC 8-bit FSM Current source PWM_out PWM_gen Analog www.infineon.com/cdm10V 196 eFuses 8-bit UART RxD Digital Packages Iout VFSS XENSIVTM sensors OSC Current source DIM Ballast control ICs Infineon's solutions for fluorescent lamps Function Capacitive load protection Suitable for dimming Max. adjustable run frequency Package ICB2FL03G ICB2FL02G ICB2FL01G Activated Deactivated Activated 140 kHz 140 kHz 120 kHz SO-19 wide body SO-16 small body SO-19 wide body Driver capability 650V 900V 900V Lamp connection Single and series Single, series and parallel Single, series and parallel PFC controller Ballast controller HV-driver www.infineon.com/lighting-ics 197 Suitable for dimming and multi-power ballasts Enables ballast compatibility with a wider range of lamp types Flexible support of both current and voltage mode preheating Reduced BOM costs Intelligent distinguishing between surge and half-bridge overcurrent events Meets standards for emergency lighting (according to DIN VDE 0108) Eases design of multi-power ballasts and reduces EMI Enhanced reliability of ballasts WBG semiconductors Discrete IGBTs Power ICs Gate driver ICs Separate adjustable levels of lamp overload and rectifier effect detection Adjustment of the preheat time No high voltage capacitor required for detection of lamp removal (capacitive mode operation) Automatically restarts by surge and inverter overcurrent events Self-adapting dead time adjustment of the half-bridge driver Motor control ICs Benefits Optimized lamp choke size Dramatically reduced time for key tests such as end of life detection, preheat/ignition timeout and pre-run operation modes Microcontrollers Features Able to handle lamp chokes with higher saturation behavior XENSIVTM sensors Integrated high performance PFC stage Intelligent digital/mixed signal power control Integrated high voltage half-bridge driver All parameters set using only resistors Highly accurate timing and frequency control over a wide temperature range Different types for single, series and parallel lamps Packages 500-950 V MOSFETs Ballast control ICs from Infineon integrate all functions required to operate FL lamps such as preheat, ignition and run-mode and protection features. 20-300 V MOSFETs Applications Ballast control IC Applications IPOL 20-300 V MOSFETs Integrated point-of-load converters Digital interface IPOL voltage regulators Analog IPOL voltage regulators www.infineon.com/ipol 198 Integrated POL portfolio PQFN 5x7 mm ~20 - 35 A PQFN 5x6 mm Discrete IGBTs ~6 - 25 A PQFN 4x5 mm ~2 - 10 A PQFN 3.5x3.5 mm PQFN 3x3 mm ~1 - 3 A 1A XENSIVTM sensors Main benefits Enhanced voltage mode PWM devices offer high accuracy, ultralow ripple and noise and higher control bandwidth for less capacitors Scalable solutions from 3 to 35 A For designs requiring high density, low cost and easy design, the family includes a 3 A device with enhanced stability constant-on-time engine that does not require external compensation enabling easy designs and fast time to market Microcontrollers High efficiency and accuracy: Our point-of-load converters integrate a PWM controller, driver and MOSFETs into a small PQFN package for ease-of-use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies to deliver ultra compact layouts and smallest bill-of-materials. It features wide operating temperature ranging from operating temperature from -40 to 125C. Power ICs Main benefits Only single chip solution with extensive PMBusTM, parallel VID, Intel SVID support allows 50 percent space saving versus external power competition Intel SVID support for Intel-based systems Parallel VID or PMBusTM for voltage setting and margining Telemetry status via digital bus Remote monitoring and update Parameter changes by register Flexible sequencing High accuracy low ripple Integrated sequencing, margin, current and voltage monitoring 35 A Iout Packages Main features PMBusTM revision 1.2 compliant 66 PMBusTM commands Wide input voltage range and single 5 V - 16 V input operations Differential remote sense Ultralow jitter voltage mode eingine Operation temp: -40 to 125 C Gate driver ICs The IR381(2/3)6x family features OptiMOSTM 5 for the highest efficiency and adds Intel SVID support (IR381(/3)6x) for Intel based systems or parallel VID (IR3826x) for voltage scaling or 8 programmable output voltages booting options to avoid programming at start up. Pin compatible options with and without PMBusTM are available to allow the flexibility of using PMBusTM only during evaluation or easily upgrade a system to PMBusTM without re-layout. Motor control ICs The IR3806x family of PMBusTM enabled IR MOSFETTM IPOL based SupIRBuckTM voltage regulators offers: Compactness of integrated controller, driver and MOSFETs High performance analog voltage mode engine Flexibility of a rich PMBusTM interface WBG semiconductors 500-950 V MOSFETs The digital interface IPOL devices are easy-to-use, fully integrated and highly efficient DC-DC regulator offering I2C/PMBusTM, parallel VID, Intel SVID. The on-board PWM controller and MOSFETs make the family a space-efficient solution, providing accurate power delivery for low output voltage and high current applications. Applications IPOL Max. fsw Distinctive features Part number Max. current [A] Package size [mm] Max. Vin Max. fsw Distinctive features Constant-on-time IR38064 35 5x7 21 V 1500 KHz IR3883 3 3x3 14 V 800 KHz IR38063 25 5x7 21 V 1500 KHz IR3823 3 3.5 x 3.5 21 V 1500 KHz 3 soft start IR38062 15 5x7 21 V 1500 KHz IR3897 4 4x5 21 V 1500 KHz IR38060 6 5x6 16 V 1500 KHz IR3898 6 4x5 21 V 1500 KHz IR38163 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR3899 9 4x5 21 V IR3894 12 5x6 21 V DDR tracking and 1500 KHz analog voltage margin/AVSO 1500 KHz IR3895 16 5x6 21 V 1500 KHz IR3826 23 5x6 17 V 1500 KHz OptiMOSTM 5, 3-level OCP IR3826A 16 5x6 17 V 1500 KHz OptiMOSTM 5, 3-level OCP IR3448 16 5x6 21 V IR3847 25 5x6 21 V 1500 KHz True differential remote sensing for 1500 KHz accuracy and ther1500 KHz mally enhanced Cu clip package PMBusTM IR38165 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38363 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38365 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38263 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID + PMBusTM IR38265 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID IR3846 35 5x7 21 V IR38164 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM, enhanced Imon IR3891 4+4 5x6 21 V IR3892 6+6 5x6 21 V IRPS5401 4+4+2+2+0.5 7 x 7 14 V 1500 KHz Dual output for density and 1500 KHz out-of-phase for less input capacitor 1500 KHz 5 output PMIC, PMBusTM Power ICs Point-of-load products - how to choose Analog voltage mode IPOL 3-35A PMBusTM digital IPOL Constant on-time IPOL Flexibility/low jitter/low ripple/constant frequency operations IR389x/IR384x/IR344x/IR3823 IPOL with digital interface Easy/light-load efficiency IR3883: 3 A sw up to 1.5 MHz 12 V Telemetry Margining Intel SVID Support Parallel VID IR3806x: 6-35 A with PMBusTM IR3816x: 15 A, 30 A with PMBusTM and Intel SVID IR38263: 30 A with PVID and PMBusTM 50 mA light load efficiency = 75% (12 Vin 1.2 Vout) 4.5 V < Vin < 54 V EnFCCM EnFCCM VIN PVIN Boot VCC SW PGOOD Vin Differential remote sense for optimum output accuracy PGOOD PGOOD R1 Enable GND VIN PVIN Boot SW ILIM Vsns Fb Comp PGND VIN VC Power good PVIN SW PGND Vo Fb PGnd OCSet VO 90 PMBusTM IC capabilities 199 Vo RS+ RS- Digital mode: I2C/PMBusTM interface www.infineon.com/ipol www.infineon.com/analog-ipol PGOOD Gnd Boot PGOOD SCL SDA SAlert VCC/ LDO_out Inventory Device ID Configuration On/off configuration fault/warnings Control Sequencing delay/ramp fault response Telemetry Vout, Iout, power temperature, peak values Status Comms, data, temps Gate driver ICs DC-DC products 1 to 35 A Programmable f Transient Tracking Remote sense 500-950 V MOSFETs Max. Vin WBG semiconductors Package size [mm] Efficiency (12 Vin , 1.2 Vout , 800 kHz) 85 80 75 70 65 60 55 50 0.01 Motor control ICs Max. current [A] 0.1 Load current 1 Microcontrollers Part number Performace" voltage mode PWM Ultralow jitter and noise, high accuracy and low ripple XENSIVTM sensors IC PMBusTM, telemetry, margin, faults, SVID PVID Digital control/configuration, telemetry and diagnostic Discrete IGBTs Analog interface IPOL Packages Digital interface IPOL 20-300 V MOSFETs DC-DC IPOL portfolio Key features Transmission rates up to 2 Mbit/s ISO11898 compliant Low-power modes Receive-only mode Standby/sleep mode Bus wake-up Thermal protection CAN FD compliance Key benefits Low current consumption Thermal protection Low power modes Excellent EMI performance and EMI robustness Standby/sleep mode Pin-to-pin replacements for industry-standard parts 500-950 V MOSFETs Our CAN transceivers provide proven quality, reliable track records and high robustness in automation applications. They feature excellent electromagnetic performance and low levels of electromagnetic interference (EMI), and are designed for ISO compliance. While our IFX1050G, IFX1050GVIO and IFX1040SJ devices are optimized for high-speed CAN communication, the new IFX1051 transceiver family addresses the upcoming CAN FD (flexible data rate) markets beyond 1 Mbit/s. WBG semiconductors Proven quality for power management applications Discrete IGBTs CAN transceivers 20-300 V MOSFETs Applications CAN transceivers Product number IFX1050G Package PG-DSO-8 Transceiver type High-speed CAN ISO compliance ISO11898-2 Transmission rate (max.) 1 Mbps IFX1050GVIO PG-DSO-8 High-speed CAN ISO11898-2 1 Mbps IFX1040SJ PG-DSO-8 High-speed CAN ISO11898-2, ISO11898-5 1 Mbps PG-DSO-8 CAN FD ISO 11898-2 2 Mbps PG-TSON-8 CAN FD ISO 11898-2 2 Mbps Gate driver ICs IFX1051SJ IFX1051LE Power ICs Product portfolio www.infineon.com/industrial-transceivers 200 Packages XENSIVTM sensors The Infineon CAN FD transceiver IFX1051, designed for HS CAN networks in industrial applications, acts as an interface between the physical bus layer and the CAN protocol controller - it drives the signals to the bus and protects the microcontroller against interferences generated within the network. Based on the high symmetry of the CANH and CANL signals, the IFX1051 provides a very low level of electromagnetic emission (EME) within a wide frequency range. Microcontrollers In addition to the classic CAN transceiver portfolio, Infineon is also offering a CAN FD transceiver. By using two reserved bits in the protocol, CAN FD will boost the baudrate of CAN systems. The so-called "bit-rate-switch"(BRS) bit increases the bit rate within the CAN data field from 1 to 2 Mbit/s whereas the so-called "extended-data-length" (EDL) bit increased "payload" from 8 bytes to 64 bytes resulting in higher bandwith. Motor control ICs CAN FD transceiver WBG semiconductors Cost efficient replacement to industry market standard device *1051 High-speed communication up to 2 Mbit/s Wide temperature range Discrete IGBTs 500-950 V MOSFETs IFX1051 key benefits CAN FD IFX1051 block diagram CANH CANL 7 Output stage 6 Driver 1 Temperature protection Mode control Receiver 8 4 VCC V33 TxD INH RxD Motor control ICs 5 Microcontrollers 3 Gate driver ICs Power ICs IFX1051 key features Fully compatible to ISO 11898-2 Wide common mode range for EMI Very low EME Excellent ESD robustness Guaranteed loop delay symmetry to support CAN FD data frames up to 2 Mbit/s VIO input for voltage adaption to the microcontroller supply Extended supply range on VCC and VIO supply CAN short-circuit proof to ground, battery and VCC TxD time-out function with very long TxD timeout timing Low CAN bus leakage current in power-down state Overtemperature protection Protected against transients Receive-only mode Green product (RoHS compliant) Two package options: tiny package PG-TSON-8 or standard package PG-DSO-8 20-300 V MOSFETs Applications CAN transceivers GND www.infineon.com/industrial-transceivers 201 Packages = Bus-biasing 2 XENSIVTM sensors VCC/2 Key features Input voltage up to 60V Output current up to 1.5 A Output voltage adjustable or fixed to specific values Quiescent current down to 5 A Overload, overtemperature, short circuit and reverse-polarity protection Low current consumption Extended temperature range -40C ... +125C Key benefits Pin-to-pin compatibility with industry-standard parts Very low dropout voltage Trackers for optimized heat distribution and external protection Trackers for maximum system cost reduction Small robust packages 500-950 V MOSFETs Our linear voltage regulators and trackers help to reduce energy consumption, extending operating time and minimizing operating costs across all kinds of systems. The wide supply voltage range, low quiescent current, rich protective feature set and choice of packages make our devices the perfect fit across a broad application spectrum, apart from automation systems as well for heath care, traffic, power tools, lighting and many other multi-market systems. Our trackers are ideal as additional supplies for off-board loads to increase system reliability. WBG semiconductors Energy-efficient voltage regulators and trackers Discrete IGBTs Voltage regulators 20-300 V MOSFETs Applications Voltage regulators Microcontroller family Input voltage [V] Input current (max.) [mA] Voltage regulator 1.8 ... 5.5 <100 IFX54211/IFX2931/IFX4949/IFX25001/IFX544xx/ IFX30081 3.3 <500/300 IFX1763/IFX544xx/IFX1117/IFX30081 3.3 ... 5.0 200 IFX20001/IFX30081/IFX21401/IFX4949/IFX544xx 1.5 and 3.3 or 5.0 100 IFX25401/IFX24401/IFX2931/IFX4949/IFX1763/IFX54441 1.5 ... 3.3 >400 IFX27001/IFX8117/IFX91041/IFX80471/IFX25001/IFX1117 XC8xx XE166/XC2000 TriCoreTM Gate driver ICs XMC1000 family XMC4000 family Industrial linear voltage regulator (selection tree) 20 V Maximum input voltage > 20 V ... 60 V Output current Output current <500 mA 2 IFX54441EJ V Adj., 3.3 V, 5 V IFX1117 Adj., 3.3 V IFX20001 3.3 V, 5 V 500 mA 3 IFX54211 3.3 V 300 mA 800 mA 30 mA 150 mA EN, rev. pol, 2% 2% accuracy EN, rev. pol, 4% EN IFX1963 Adj. IFX20002 3.3 V, 5 V 3 IFX27001 Adj., 3.3 V, 5 V 1000 mA 40 V, 3% IFX1763 Adj., 3.3 V, 5 V 2 500 mA 1500 mA 30 mA EN, rev. pol, 2.5% EN, rev. pol, 1.5% EN, rev. pol, 4% IFX21401 3 IFX24401 5V 7 Motor control ICs >500 mA 300 mA EN, 2% 4 IFX21004 50 mA 30/150 mA 0.5% 60 V IFX4949 IFX25001 3.3 V, 5 V 100 mA 6 Microcontrollers 500 mA Power ICs Infineon's microcontroller families and industrial voltage regulators 400 mA RST, 1% 45 V, rev. pol, 4% 2 Low noise behavior 3 Small package 4 Tracker! High accuracy 5 Ultra low quiescent current IFX25401 Adj., 5 V IFX2931 3.3 V, 5 V 400 mA 100 mA 6 Dual output 7 Very low dropout EN, rev. pol, 2% 5 IFX30081 Adj., 3.3 V 50 mA, 5 uA www.infineon.com/industrial-voltage-regulators 202 Packages Low quiescent current XENSIVTM sensors Output current 1 Our high-efficiency switching regulators and controllers help to reduce energy consumption. In addition to extending the operating time of battery powered systems, they also significantly improve the thermal budget of the application. Overall, this translates into minimal operating costs. For your design flexibility, they are available as adjustable voltage variants as well as with dedicated fixed output voltage values. Key benefits High-efficiency regulation Only a few external components needed for stable regulation Perfectly suited for regulation in pre-/post-regulation power supply architectures Discrete IGBTs Key features Input voltage up to 60V Output currents going from 500 mA up to 10 A Switching frequencies ranging from 100 kHz to 2.2 MHz Shutdown quiescent current down to below 2 A Current limitation and overtemperature protection Enable feature DC-DC converters Output current [A] Product features IFX81481ELV Adjustable Buck controller 10.0 10 A synchronous DC-DC adjustable step down controller; f = 100 kHz-700 kHz, N PG-SSOP-14 IFX90121EL V50 5.0V Buck converter 0.5 Vin up to 45 V, 2.2 MHz step-down regulator with low quiescent current PG-SSOP-14 IFX80471SK V Adjustable Buck controller 2.3 Vin up to 60V; VQ adjustable from 1.25 V up to 15 V; external MOSFET PG-DSO-14 IFX80471SK V50 5.0V Buck controller 2.3 Vin up to 60V; external MOSFET PG-DSO-14 IFX91041EJV Adjustable Buck converter 1.8 VQ adjustable from 0.6 V up to 16 V; tolerance 2% up to 1000 mA PG-DSO-8 IFX91041EJ V33 3.3 V Buck converter 1.8 VQ fixed to 3.3 V; tolerance 2% up to 1000 mA PG-DSO-8 IFX91041EJ V50 5.0V Buck converter 1.8 VQ fixed to 5.0V; tolerance 2% up to 1000 mA PG-DSO-8 VS 45 V 8 Output current Enable 5 BDS Feed forward SYNC Buck converter 3 1 6 Oscillator 4 Bandgap reference IFX91041 Soft-start ramp generator 2 GND www.infineon.com/industrial-dcdc-converters BUO IFX90121 5V > 45 V ... 60 V Output current 1 A Charge pump Overtemperature shutdown COMP Maximum input voltage >1 A IFX91041 Adj., 5 V, 3.3 V 2 A IFX81481 Adj. IFX80471 Adj., 5 V 500 mA 1.8 A 10 A 2.3 A 2.2 MHz 370 kHz Synchronous controller 60 V, 360 kHz FB XENSIVTM sensors EN 7 Motor control ICs Industrial DC-DC buck regulators (selection tree) Microcontrollers IFX91041 block diagram 203 Package Power ICs Output current type Gate driver ICs VQ (multiple) Packages Part number 500-950 V MOSFETs Robust range of converters for the widest application spectrum WBG semiconductors DC-DC converters 20-300 V MOSFETs Applications DC-DC converters Galvanic isolated high-side switches and input ICs Our ISOFACETM product family provides robust and intelligent galvanic isolation for industrial control applications such as programmable logic controllers, sensor input modules, control panels and general control equipment. The output switches are compact in design, enabling robust and reliable operation at low system cost. Ideal for high-speed applications, input ICs are equally robust, reliable and compact - also offering superior EMI robustness and diagnostics. Key benefits Robust and reliable Compact system solution Lower system cost System status feedback Directly interfacing with all MPUs and MCUs WBG semiconductors Key features Integrated galvanic isolation (500V) Eight channels (0.6 or 1.2 A, each) Inductive load switching Diagnostic feedback (overtemperature, overload) Serial and parallel MCU interface Discrete IGBTs Isolated output switches 500-950 V MOSFETs ISOFACETM 20-300 V MOSFETs Applications Digital I/O ICs V bb V CC V CC Power ICs Isolated output switch block diagram V bb V CC DIS Control unit WR Parallel or Microcontroller serial D0 i.e. interface XMC1xxx D7 XMC4xxx Control and protection unit OUT1 Gate driver ICs CS Transmission Transmission OUT0 Logic DIAG DIAG OUT7 Switch Microcontroller interface Safety features Diagnostics feedback ISO1H812G ISO1H815G ISO1H816G 0.6 A 0.6 A 0.6 A 1.2 A 1.2 A Load current increase by using outputs in parallel Inductive clamping energy per channel: 1 Joule Parallel Parallel Serial Parallel Serial Max. continuous load current per channel Type Nominal voltages 5V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V Isolation voltage: VISO = 500V UL508 and EN 61131-2 certified Active current limitation Thermal shutdown Common output disable pin Overtemperature Vbb undervoltage Package DSO-36 (16x14 mm) Infineon ordering code www.infineon.com/isoface 204 ISO1H811G SP000722122 SP000413798 SP000413800 SP000555576 SP000555578 Motor control ICs Vbb operational range: 11 V to 35 V ISO1H801G Microcontrollers Product overview GND BB XENSIVTM sensors ISO1H81xG Packages GND CC GND Key features Integrated galvanic isolation (500V) Eight channels (IEC type 1/2/3) Up to 500 kHz sampling speed Programmable input filters Channel-specific diagnostics (wire-break, undervoltage) Key benefits Robust and reliable Compact system solution High-speed applications Superior EMI robustness System status feedback Valuable maintenance support SW1 S W2 Vbb 12 k I0H I0L IN7 2 k 12 k I7H I7L Sync CS Parallel or serial interface Digital filter Microcontroller e.g. XE166 GND GNDBB GNDFI ERR Digital filter Logic 2 k Deserialize IN0 DC ENA Serialize 8 sensors V FI VCC TS WB Discrete IGBTs 330 nF WBG semiconductors Digital input switch block diagram 500-950 V MOSFETs Isolated digital input ICs 20-300 V MOSFETs Applications Digital I/O ICs ISO1I811T ISO1I813T IEC type: I, II, III Input status LED Max. sampling frequency 125 kHz 500 kHz Deglitching filter setting Hard wired Software, individual per channel Synchronous data acquisition - 3.3 V/5 V Serial and parallel 500V isolation voltage Wire break, channel-specific - Vbb undervoltage - Support for external Vbb supply - Package TSSOP-48 (8x12.5 mm) SP000876494 SP000876504 C interface Safety features Infineon ordering code www.infineon.com/isoface 205 Gate driver ICs Motor control ICs Microcontrollers Product overview Input characteristics XENSIVTM sensors Ordering code: SP001632038 The automation board utilizes Infineon's industry-leading XMCTM ARM(R) Cortex(R)-M4 microcontroller in combination with Infineon supply, interface, communication and safety products. Complete automation kit gateway Combined MCU with EtherCAT(R) slave application Isolated interfaces w/ diagnose Ethernet connectivity with software examples available 24 V supply CAN connectivity Full software DAVETM examples Packages XMC4800 automation board V2 Power ICs ISO1I813T Solar applications Wind energy systems Smart grid Medical E-bikes and LEVs (light electric vehicles) Motor control and drives Power supplies Power ICs Key applications Industrial automation Programmable logic controller (PLC) Digital I/O modules Robotics Building and home automation Set Home Industrial automation system diagram Control PLC/ microcontroller Control Digital output switch Digital output switch Digital input Gate driver ICs Power supply unit 500-950 V MOSFETs The well-established high-side switch Industrial PROFETTM products were designed for targeting a variety of industrial applications which include all types of resistive, inductive and capacitive loads. Due to their outstanding energy robustness, they are perfectly suitable for switching even higher inductive loads and driving relays. Their main application areas include high-voltage applications (VBAT up to 60 V), high-speed PWM applications (up to 1 kHz) and they are most notably capable of switching higher inductances smoothly. Industrial PROFETTM can be applied to drive any kind of sensor units, indicators, displays, LEDs, relays, valves and magnetic actuators or replace electromechanical relays, fuses and discrete circuits. Industrial PROFETTM are also the perfect match for applications with long wiring or any other kind of inductive loads or applications with space constraints. WBG semiconductors Protected high-side switches Discrete IGBTs Industrial PROFETTM 20-300 V MOSFETs Applications High-side switches Security module Process Sensor module Motor control Motor control Power bus Robot control System benefits Right fit for digital output switches, motor or robot control, protected switching of decentralized loads like sensors or auxiliary supply Suitable for all types of complex loads including high inductances (high EAS) Outstanding robustness and reliability as required by industrial mission profiles www.infineon.com/industrial-profet 206 Security module Thermally optimized products with low RDS(on) to deal with the high ambient temperatures and limited or even no cooling Diagnosis and protection for safe system operation Small and compact design for higher integration and applications with space constraints Microcontrollers Sensor module Motor control XENSIVTM sensors Security module Packages Motor control Motor control ICs Sensor module Applications High-side switches Field level Industrial PROFETTM Protected high-side switches Suitable for all types of complex loads including high inductances (EAS) as PLC manufacturers cannot predict how the end customer will use the digital outputs Outstanding robustness and reliability as required by industrial mission profiles Product ITS4060S-SJ-N ISP772T ITS428L2 ITS4100S-SJ-N ISP762T ITS4200S-ME-O ITS4141N ITS4141D ITS4200S-ME-P ITS4142N ITS4200S-ME-N ISP452 ITS4200S-SJ-D ISP752R ISP752T ITS4300S-SJ-D ISP742RI ITS41K0S-ME-N ITS4140N ITS4040D-EP-D ITS5215L ITS42K5D-LD-F ITS4075Q-EP-D ITS4090Q-EP-D ITS724G ITS4130Q-EP-D ITS716G ITS711L1 ITS42008-SB-D ITS4880R Number of channels RDS(on) (typ) [m] Nominal load current [A] 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 4 4 4 4 4 4 8 8 50 50 60 70 70 150 150 150 150 150 160 160 150 200 200 250 350 1000 1000 40 90 2500 75 100 90 130 140 200 200 200 3.10 2.60 7.00 2.40 2.00 1.10 1.10 1.10 2.20 2.20 1.20 1.20 1.70 1.70 1.70 0.80 0.80 0.55 0.55 2 x 2.00 2 x 2.00 2 x 0.25 4 x 2.00 4 x 0.50 4 x 2.00 4 x 0.50 4 x 1.00 4 x 1.00 8 x 0.60 8 x 0.60 EAS IL(SC) (typ) [mJ] 900 @ 1.50 A 900 @ 1.50 A 190 @ 7.00 A 870 @ 1.00 A 870 @ 1.00 A 700 @ 0.50 A 700 @ 0.50 A 12,000 @ 0.50 A 160 @ 1.00 A 160 @ 1.00 A 500 @ 0.50 A 500 @ 0.50 A 125 @ 1.00 A 125 @ 1.00 A 125 @ 1.00 A 800 @ 0.30 A 800 @ 0.30 A 1000 @ 0.15 A 1000 @ 0.15 A 185* 178 @ 3.50 A Freewheeling 60* 410* 120 @ 3.30 A 380* 76 @ 2.30 A 150 @ 1.90 A 10,000 @ 625 mA 10,000 @ 625 mA 5.00 ... 34.00 5.00 ... 34.00 4.75 ... 41.00 5.00 ... 34.00 5.00 ... 34.00 11.00 ... 45.00 12.00 ... 45.00 12.00 ... 45.00 11.00 ... 45.00 12.00 ... 45.00 5.00 ... 34.00 5.00 ... 34.00 6.00 ... 52.00 6.00 ... 52.00 6.00 ... 52.00 5.00 ... 34.00 5.00 ... 34.00 4.90 ... 60.00 4.90 ... 60.00 5.00 ... 45.00 5.50 ... 40.00 4.50 ... 45.00 5.00 ... 45.00 5.00 ... 45.00 5.50 ... 40.00 5.00 ... 45.00 5.50 ... 40.00 5.00 ... 35.00 11.00 ... 45.00 11.00 ... 45.00 17.0 17.0 22.0 10.0 10.0 1.4 1.4 1.4 3.0 3.0 1.5 1.5 6.5 6.5 6.5 1.2 1.2 0.9 0.9 4.1 15.0 0.6 4.1 1.5 15.0 1.25 9.0 7.5 3.0 3.0 ITS4060S-SJ-N, ITS4100S-SJ-N, ITS4200S-SJ-D, ITS4300S-SJ-D, ITS4200S-ME-N, ITS4200S-ME-O, ITS4200S-ME-P, ITS41K0S-ME-N order: INDPROFETEVALBOARDTOBO1 www.infineon.com/industrial-profet * Per one channel 207 Addressing the I/O modules quasi standard currents 2A & 0.5A, but also lower currents as within micro-PLCs Recommended operating voltage range [V] Industrial PROFETTM evaluation board plus samples: Thermally optimized products with low RDS(on) to deal with the high ambient temperatures within I/O modules with limited or even no cooling Diagnosis and protection for safe system operation Small and compact design for higher integration Diagnosis Package [A] n/a n/a Digital n/a n/a n/a n/a n/a n/a n/a n/a n/a Digital Digital n/a Digital Digital, inverted n/a n/a Digital Digital Digital Digital Digital Digital Digital Digital Digital Digital Digital DSO-8 DSO-8 TO252-5 PG-DSO-8 DSO-8 SOT-223-4 SOT-223-4 TO-252-5 SOT-223-4 SOT-223-4 DSO-8 SOT-223-4 DSO-8 DSO-8 DSO-8 DSO-8 DSO-8 SOT-223-4 SOT-223-4 TSDSO-14 DSO-12 TSON-10 TSDSO-14 TSDSO-14 DSO-20 TSDSO-14 DSO-20 DSO-20 DSO-36 DSO-36 Additional evaluation boards: ITS42008, order: DEMOBOARDITS42008TOBO1 ITS42K5D-LD-F, order: DEMOBOARDITS42K5DTOBO1 ITS 4040D-EP-D, order: DEMO BOARD ITS 4040DTOB01 ITS 4075Q-EP-D, order: DEMO BOARD ITS 4075QTOB01 ITS 4090Q-EP-O, order: DEMO BOARD ITS 4090QTOB01 ITS 4130Q-EP-D, order: DEMO BOARD ITS 4130QTOB01 Power ICs System benefits Gate driver ICs Protection diagnosis WBG semiconductors Load 4 Discrete IGBTs Load 3 Multichannel switch Motor control ICs Load 2 Isolation Microcontrollers Load 1 Switch XENSIVTM sensors Microcontroller or bus ASIC Switch 500-950 V MOSFETs Protection diagnosis Packages Control level 20-300 V MOSFETs PLC - programmable logic controller digital output modules Key features Low-side switches with integrated protection features Scalable in RDS(on) ranges from 490 m down to 11 m Adjustable slew rate control (BTFxxx) Thermal shutdown with auto restart or latch behavior Status feedback via - Increased input current (HITFETTM 2nd gen.) - Digital read out via SRP (BTF3050TE) - Via status pin (BTF3xxxEJ) Key applications Industrial automation* Programmable logic controller (PLC)** Digital I/O modules Building and home management All kind of solenoid or valve driving Power modules Solar power inverters Application diagramm example for HITFETTM VBatt IN Voltage OUT regulator 5V Load CVDD2) RSTATUS VDD ENABLE OUTPUT OUT STATUS INPUT (feedback)/ OUTPUT (reset) SRP GND GND 500-950 V MOSFETs IN OUTPUT (PWM) CSRP1) RSRP Microcontrollers Vehicle CAN bus Microcontroller VDD Motor control ICs Gate driver ICs Key benefits High design flexibility with scalable RDS(on) and package Driving applications with high switching speed requirements up to 25 kHz (e.g. valve, solenoid) Easy to design-in Choice of packages to match individual application needs WBG semiconductors HITFETTM stands for highly-integrated temperature-protected MOSFET. These well-established low-side switches offer a compelling feature set with protection against overtemperature, short circuit and overload conditions as well as ESD robustness. The HITFETTM+ family is the new generation based on a new technology, enabling a significant shrink compared to the existing HITFETTM portfolio (up to 50 percent shrink). This new generation consists of standard and fully-featured protected low-side switches (35 to 125 m) in the TO-252-3 DPAK/TO-252-5 DPAK and TDSO-8 packages. HITFETTM and HITFETTM+ devices address a wide range of applications including resistive, inductive and resistive loads. Discrete IGBTs Protected low-side switches Power ICs HITFETTM 20-300 V MOSFETs Applications Low-side switches www.infineon.com/hitfet *See block diagram on page 204 ** See block diagram on page 205 208 Packages 1) CSRP-GND < 100 pF - maximum permittet parasitic capacitance at the SRP-pin 2) Filter capacitor on supply, recommended 100 nF XENSIVTM sensors BTF3xxxEJ Diagnosis Package Status pin TO-252-5 (DPAK 5-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-5 (DPAK 5-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-263-3-2 (TO-220-3 (SMD)) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) SOT-223 SOT-223 SO-8 (DSO-8) DSO-8 SOT-223 HITFETTM+ HITFETTM+ BTF3035EJ* NEW! HITFETTM+ BTF3050TE HITFETTM+ BTS3050EJ HITFETTM+ BTS3050TF HITFETTM+ BTF3050EJ* NEW! HITFETTM+ 1 1 1 28 30 28 5.00 5.00 5.00 105 @ 5 A 106 @ 5 A 95 @ 5 A up to 31 up to 31 up to 32 - - - 20.00 20.00 14.00 - - 41.00 Status pin - Status pin 1 1 1 1 40 40 44 40 3.00 4.00 4.00 4.00 120 @ 3 A 62 @ 3 A 64 @ 4 A 62 @ 4 A up to 28 up to 31 up to 31 up to 32 - - - - 8.00 15.00 15.00 10.00 30.00 - - 29.00 Through SRP pin Status pin - Status pin BTS3060TF BTS3080EJ BTS3080TF HITFETTM+ HITFETTM+ HITFETTM+ BTF3080EJ* NEW! HITFETTM+ BTS3125EJ HITFETTM+ BTS3125TF HITFETTM+ BTF3125EJ* NEW! HITFETTM+ 1 1 1 1 50 64 69 64 3.00 3.00 3.00 3.00 55 @ 3 A 35 @ 3 A 38 @ 3 A 33 @ 3 A up to 35 up to 31 up to 31 up to 32 - - - - 10.50 10.00 10.00 7.00 - - - 18.00 - Status pin - Status pin 1 1 1 100 108 100 2.00 2.00 2.00 30 @ 2 A 24 @ 2 A 23 @ 2 A up to 31 up to 31 up to 32 - - - 7.00 7.00 5.00 - - 12.00 Status pin - Status pin BTS3018TC BTS141TC BTS3028SDL BTS3028SDR BTS133TC BTS3046SDL BTS3046SDR BTS117TC BTS3104SDL BTS3104SDR AUIPS2041L AUIPS2051L AUIPS2052G BTS3408G BSP75N 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 14 25 28 28 40 46 46 80 104 104 100 250 250 480 490 6.00 5.10 5.00 5.00 3.80 3.60 3.60 3.50 2.00 2.00 1.40 0.90 0.90 0.55 0.70 1900 4000 350 350 2000 140 140 1000 50 50 800 550 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 35 up to 35 up to 35 up to 36 up to 36 - - - - - - - - - - 5.00 1.80 1.80 - - 30.00 25.00 18.00 18.00 21.00 10.00 10.00 7.00 6.00 6.00 - - - 1.00 1.00 - - - - - - - - - - - - - - - Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin - - - Through input pin Through input pin Power ICs HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM 500-950 V MOSFETs IL(lim) IL(lim)_TRIGGER (typ) (typ) [A] [A] 35 70 WBG semiconductors BTS3011TE NEW! BTS3035EJ BTS3035TF Product Channels RDS(on) @ 25C Nominal load EAS Operating IL(SD) family [mW] current [mJ] voltage range (typ) [A] [V] [A] HITFETTM+ 1 10.7 10 300 @ 5 A up to 28 - Discrete IGBTs Product type 20-300 V MOSFETs Applications Low-side switches Operating conditions Nominal voltage range 8 V - 18 V Nominal current 3 A (typ.) DC www.infineon.com/hitfet www.infineon.com/shields-for-arduino * Available in Q2 2018 209 Motor control ICs Microcontrollers XENSIVTM sensors Key features PWM up to 14 kHz (10 percent duty cycle) Driver circuit with logic level inputs Fault feedback Protection e.g. against overtemperature and overcurrent Able to switch all kinds of resistive, inductive and capacitive loads Packages The low-side switch shield from Infineon consists out of three BTF3050TE low-side switches of the HITFETTM+ family providing three independent power channels that can be controlled via the input pins. The shield is compatible with microcontroller boards using the Arduino form factor, for example the corresponding ARM(R) powered XMCTM microcontroller kits from Infineon and supports fast and easy prototyping of applications with BTF3050TE. Gate driver ICs Low-side switch shield with BTF3050TE Applications Low voltage drives Half-bridges The NovalithICTM provides a complete, low-ohmic protected half-bridge in a single package (typ. path resistance at 25C down to 10 m). It can also be combined with an additional NovalithICTM to create a H-bridge or three-phase bridge. The NovalithICTM family has the capability to switch high-frequency PWM while providing overcurrent, overvoltage and overtemperature protection. The NovalithICTM family offers cost-optimized, scalable solutions for protected high-current PWM motor drives with very restrictive board space. Due to the P-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. The latest addition to the NovalithICTM family is the IFX007T, which is optimized for industrial applications. Discrete IGBTs Diagnostic features Overtemperature Overvoltage Overcurrent Current sense and status Product number Operating range [V] RDS(on) path (typ.) [m] ID(lim) (typ.) [A] Iq (typ.) [A] Switch time (typ.) [s] Diagnosis Protection Package Qualification IFX007T 5.5 ... 40.0 10.0 70 7 0.25 OT, OC, CS UV, OT, OC PG-TO-263-7 JESD471 Gate driver ICs Application example for high-current PWM motor drives Reverse polarity protection WO Reset Microcontroller V RO VS I VSS Motor control ICs Voltage Q regulator DD D GND I/O I/O I/O I/O I/O IFX007T INH IN IS SR IFX007T VS VS OUT GND M OUT GND INH Microcontrollers I/O Power ICs Protection features Overtemperature shutdown Overvoltage (lockout or smart clamp) Undervoltage Overcurrent IN IS SR XENSIVTM sensors Basic features Low quiescent current Capable for high PWM frequency Logic level input Adjustable slew rate Cross-current protection WBG semiconductors Motor control design made easy 500-950 V MOSFETs 20-300 V MOSFETs Half- and H-bridges www.infineon.com/novalithic CS = Current sense 210 OC = Overcurrent OT = Overtemperature Packages High current H-bridge Applications Low voltage drives PWM generator SDI Overload detection Logic control and latch SPI interface Configuration IL(NOM) [A] IL(lim) [A] Power driver Open-load detection Overload detection Error detection Temperature sensor Low-side driver OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 OUT9 OUT10 OUT11 OUT12 GND GND GND GND Iq [A] VS(OP) [V] Protection Diagnostic interface 500-950 V MOSFETs Gate driver ICs Overtemp. detection Highlights VCE(sat)/RDS(on) Package TLE94003EP 3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5...20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package 850 m/switch TSDSO-14-EP TLE94103EP 3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package 850 m/switch TSDSO-14-EP TLE94004EP 4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5...20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package 850 m/switch TSDSO-14-EP TLE94104EP 4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package 850 m/switch TSDSO-14-EP TLE94106EL 6 x half-bridge 6 x 0.30 6 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back- 850 m/switch SSOP-24 wards compatible to TLE84106EL TLE94108EL 8 x half-bridge 8 x 0.30 8 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept TLE94110EL 10 x half-bridge 10 x 0.30 10 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back- 850 m/switch SSOP-24 wards compatible to TLE84106EL TLE94112EL 12 x half-bridge 12 x 0.30 12 x 0.90 0.6 5.5...20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + 12 outputs in one package www.infineon.com/dc-motor-bridges 211 High-side driver Overtemp. detection SDO Key applications 12 V automotive and industrial applications Flap motors in HVAC systems Mirror adjustment and fold Small DC motors ( 0.9 A/output) Bi-stable relays Product name 12x driver stage Open-load detection CSN SCLK Charge pump Discrete IGBTs Undervoltage and overvoltage monitor Power ICs Bias and monitor VS2 850 m/switch SSOP-24 850 m/switch SSOP-24 Motor control ICs EN Voltage supply range: 5.5- 20 V Adjustable open load threshold for two outputs Variable driving schemes for up to 11 motors OUT 1 and 2 optimized for driving HS loads (e.g. LED) VS1 12-fold half-bridge driver SPI interface Microcontrollers VDD XENSIVTM sensors Block diagram TLE94112EL Packages Key features and benefits Three-, four-, six-, eight-, ten-, and twelve-fold half-bridges with integrated output stages and PWM 16-bit SPI or direct inputs for control and diagnosis WBG semiconductors The TLE94xyz are protected half-bridge drivers designed for 12 V motion control applications such as small DC motors for heating, ventilation and air conditioning (HVAC), as well as automotive mirror adjustment and fold. The family offers three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge driver. All devices can drive DC motor loads up to 0.9 A per output in cascaded or parallel operation. They provide diagnosis of short circuit, open load, power supply failure and overtemperature for each half-bridge to ensure safe operation in HVAC or other systems. The TLE94xyz offers enhanced EMC performance, which in combination with the low quiescent current and a small package makes the product attractive for a wide range of 12 V automotive and industrial applications. 20-300 V MOSFETs Integrated multi-half-bridge driver ICs Applications Low voltage drives Target applications Brushed DC motor control up to 250 W continuous load 24 V nominal input voltage (max. 6 V-40 V) Average motor current 30 A restricted due to PCB (IFX007T current limitation @ 55 A min.) Discrete IGBTs DC motor control with half-bridge IFX007T 500-950 V MOSFETs Features Capable of high frequency PWM, e.g. 30 kHz Adjustable slew rates for optimized EMI by changing external resistor Driver circuit with logic level inputs Diagnosis with current sense WBG semiconductors The DC motor control shield is capable of driving two uni-directional DC motors (half-bridge configuration) or one bidirectional DC motor (H-bridge configuration). The implemented half-bridge NovalithICTM IFX007T can be controlled by a PWM via the IN pin. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit. 20-300 V MOSFETs DC motor control shield with IFX007T for Arduino www.infineon.com/shields-for-arduino www.infineon.com/makers 212 Target applications Multi-motor applications DC motors and voltage controlled bipolar stepper motors Toys HVAC systems Motor control ICs Microcontrollers Features Driver with 12 half-bridge outputs to drive DC motors, resistive or inductive loads Driver is protected against overtemperature, overcurrent, overvoltage, undervoltage and enables diagnosis of overcurrent, overvoltage, undervoltage SPI interface with zero clock diagnosis Enhanced EMC performance Integrated PWM generator with three different frequencies (80 Hz, 100 Hz, 200 Hz) XENSIVTM sensors The DC motor shield is a small evaluation board equipped withTLE94112EL for use with Arduino. The TLE94112EL is capable to drive up to 6 small DC motors in parallel mode or up to 11 DC motors in cascaded mode. All outputs can drive up to 0.9 A. The outputs can be used stand-alone or combined to increase driving capability up to 3.6 A. Packages DC motor shield with TLE94112EL for Arduino Gate driver ICs Power ICs Infineon's shields for Arduino are compatible with microcontroller boards using the Arduino-compatible form factor, e.g. Infineon's XMCTM microcontroller kits. Applications Low voltage drives 20-300 V MOSFETs Integrated H-bridges 500-950 V MOSFETs IFX9201SG and IFX9202ED* are general purpose 6 A H-bridges designed for the control of small DC motors and inductive loads. The outputs can be pulse width modulated at frequencies up to 20 kHz, which enables operation above the human sonic range by means of PWM/DIR control. While the signal at the DIR input defines the direction of the DC motor, the PWM signal controls the duty cycle. For load currents above the current limitation threshold (8 A typically), the H-bridges switch into chopper current limitation mode. Quiescent current (typ.) [A] Operating range [V] RDS(on) (typ./switch) [m] Package RthJC (max.) [K/W] 2 x 6.0 A 19.0 5...36 2 x 100 DSO-36 2 x 0.5 Power ICs Applications examples 100 nF VS 3.3 or 5 V Digital supply VSO VS < 40 V 100 F VS 3.3 or 5 V Digital supply IFX9201SG Application example H-bridge with error flag 100 nF IFX9201SG VSO OUT1 DIS PWM DIR CSN SCK SI SO Microcontroller OUT1 DIS PWM DIR CSN SCK SI SO M OUT2 < 33 nF < 33 nF Microcontroller GND M OUT2 IFX9201 2-phase stepper motor Step PWM_1 Direction (DIR) Direction (DIR) Disable (DIS) Disable (DIS) OUT1_1 OUT1_2 IFX9202ED OUT2_1 XMC1300 IFX9201 PWM_2 PWM_1 PWM_1 + - + - GND + - + - + - + - www.infineon.com/dc-motor-bridges 213 XMC1300 OUT2_2 PWM_2 PWM_2 + - < 33 nF GND 2-phase stepper motor Step < 33 nF Gate driver ICs 100 F VBat Motor control ICs VS < 40 V Application example H-bridge with SPI interface Microcontrollers VBat GND XENSIVTM sensors IFX9202SG Discrete IGBTs Current limit (min.) [A] + - Packages Product number WBG semiconductors Key features and benefits Up to nominal 36 V supply voltage Short circuit, overtemperature protection and undervoltage shutdown Detailed SPI diagnosis or simple error flag Simple design with few external components Small and robust DSO-12-17 (IFX9201SG) and DSO-36-72 (IFX9202ED) packages Applications Low voltage drives 500-950 V MOSFETs Build your own DC motor control with the H-bridge Kit 2GO, a ready-to-use evaluation kit. It is fully populated with all electronic components equipped with the H-bridge IFX9201 combined with XMC1100 microcontroller based on ARM(R) Cortex(R)-M0 CPU. It is designed for the control of DC motors or other inductive loads up to 6 A or up to 36 V of supply. www.infineon.com/h-bridge-kit-2go www.infineon.com/IFX9201SG-stepper-motor-shield www.infineon.com/makers 214 Power ICs Gate driver ICs Motor control ICs Microcontrollers Target applications Stepper motors up to 5 A phase current 24 V nominal input voltage for the power stage Average motor current 3 A without additional cooling effort, 5 A possible with proper cooling Benefits Fast and inexpensive prototyping of stepper motor control Simple testing of microstepping algorithms Diagnose pin to allow hardware feedback during development Overtemperature shutdown with latch behavior and undervoltage shutdown of the power section XENSIVTM sensors The stepper motor control shield from Infineon is one of the first high current stepper motor control boards being compatible to Arduino as well as to Infineon's XMC1100 boot kit. The stepper motor control shield is capable to drive the two coils in a stepper motors featuring dual-half bridge configuration. The implemented integrated IFX9201 half-bridges can be controlled by a STEP-signal via the STEP pin. Interfacing to a microcontroller is made easy by the integrated XMC1300 microcontroller that holds the peripherals to allow high-speed current control. Microstepping of the stepper motor can be achieved using the internal comparators, while operational amplifiers are installed to adapt the motor current sense signal to the microcontroller's input levels. Packages Stepper motor control shield with IFX9201SG and XMC1300 for Arduino Discrete IGBTs WBG semiconductors Target applications DC motor control for industrial applications Home and building automation Power tools battery management Industrial robotic applications Electric toys applications Features Compatible with microcontroller boards using the Arduino form factor, e.g. Infineon's XMCTM microcontroller kits Capable of high frequency PWM, e.g. 30 kHz Adjustable slew rates for optimized EMI by changing external resistor Driver circuit with logic level inputs Diagnosis with current sense 20-300 V MOSFETs H-bridge Kit 2Go with IFX9201SG Applications Low voltage drives Cost-efficient, durable and reliable The TLE4726G, TCA3727G and TLE8444SL are designed to drive bipolar stepper motors, DC motors and other inductive loads that operate on a constant current. The TLE4726G and TCA3727G have integrated control logic and power output stages for two bipolar windings. IL(NOM) IL(lim) Iq [A] VS(op) Step operations Protection Diagnostic interface WBG semiconductors Highlights Package TCA3727G 2x0.75 2x1.5 200 5-50 Full to mini-step OT - High operating voltage, low PG-DSO-24 quiescent current with inhibit TLE4726G 2x0.75 2x1.5 200 5-50 Full to mini-step OT - High operating voltage, low PG-DSO-24 quiescent current with inhibit 4x0.90 1 1-18 Full to half-step SC, OT, OV, UV, OL Status flag Open-load detection in on-state TLE8444SL 4x0.50 SC = Short circuit UV = Undervoltage OL = Open-load SSOP-24-7 www.infineon.com/dc-motor-bridges 215 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs CS = Current sense OC = Overcurrent OT = Overtemperature Discrete IGBTs Product number Applications ATM Franking machines Vending machine Idle speed control Printer Toys Power ICs Key features Full to half-step operation Protected bipolar power stages Implemented current control Error flag for diagnosis Overtemperature protection 500-950 V MOSFETs 20-300 V MOSFETs Stepper drivers Applications IPM 20-300 V MOSFETs CIPOSTM IPM family Control integrated power system (CIPOSTM) intelligent power modules (IPM) CIPOSTM IPMs are families of highly integrated, compact power modules designed to drive motors in applications ranging from home appliances to fans, pumps, and general purpose drives. Infineon's energy-efficient IPMs integrate the latest power semiconductor and control IC technology leveraging Infineon's advanced IGBTs, MOSFETs, next-generation gate driver ICs and state-of-the-art thermo-mechanical technology. WBG semiconductors 500-950 V MOSFETs Depending on the level of integration and power to be handled, Infineon offers a variety of IPMs, with different semiconductors in different packages and different voltage and current classes. CIPOSTM Micro CIPOSTM Mini CIPOSTM Maxi All MOSFET 40/100/250/500 V 250/500 V MOSFET: 250/500 V IGBT: 600 V, 3/4/6 A IGBT: 600 V, 4-30 A MOSFET: 600 V IGBT: 1200 V, 5-10 A 29 x 12 x 2.9 mm 36 x 21 x 3.1 mm 36 x 23 x 3.1 mm 0.1 Arms Motor current Performance IPM 20 Arms www.infineon.com/ipm 216 Packages XENSIVTM sensors Key benefits Shorter time-to-market Increased reliability Reduced system design complexity Improved manufacturability Standard IPM Motor control ICs Compact IPM Microcontrollers 7 x 8 x 0.9 mm 8 x 9 x 0.9 mm 12 x 12 x 0.9 mm Gate driver ICs Power ICs CIPOSTM Nano Discrete IGBTs CIPOSTM product overview The family is comprised of a series of fully integrated three-phase or half-bridge surface-mount motor control circuit solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module, providing cost savings through a smaller package design and even eliminating the need for an external heat sink. Key applications Smallest modules on the market Wide range of footprint compatible parts Integrated bootstrap functionality Untervoltage lockout for all channels Key benefits Cost savings from smaller footprint and reduced PCB space Easy implementation of two or three-phase motor drives with half-bridge IPMs IPMs distribute heat dissipation and enable elimination of heat sink Same PCB footprint to address multiple application markets (100-230 VAC) Small home appliances Hair driers Air purifiers Fans Motor drives Battery management Water pumps CPAP Package overview QFN 8x9 8 x 9 x 0.9 mm QFN 7x8 7 x 8 x 0.9 mm www.infineon.com/ipm 217 Packages XENSIVTM sensors Microcontrollers QFN 12x12 12 x 12 x 0.9 mm 500-950 V MOSFETs Gate driver ICs Motor control ICs Key features Motor drive-optimized fast recovery FETs Heat sink-less operation WBG semiconductors CIPOSTM Nano is a family of highly integrated, ultracompact IPMs for high efficiency appliance and light industrial applications including rectifiers, converters, inverters in power management circuits and motor drives for hair dryers, air purifiers, ceiling fans, circulation pumps and ventilators. By utilizing an innovative packaging solution, these IPMs delivers a new benchmark in device size, offering up to a 60 percent smaller footprint than existing three-phase motor control power IPMs. Discrete IGBTs Three-phase or half-bridge driver with MOSFETs Power ICs CIPOSTM Nano 20-300 V MOSFETs Applications IPM These IPMs offer cost-effective power solutions by leveraging industry standard footprints and processes compatible with various PCB substrates. The advanced IPMs feature rugged and efficient high voltage MOSFETs and IGBTs specifically optimized for variable frequency drives with voltage ratings of 250~600 V IGBTs. The IPMs offer DC current ratings ranging up to 6 A to drive motors up to 100 W without heatsink and up to 300 W with heatsink, and are available in both through-hole and surface mount package options. Key applications Fan motors Low-power general purpose drives (GPI, servo drives) Pumps Blowers Active filter (active power factor correction) for HVAC Power ICs Key features Integrated bootstrap functionality Undervoltage lockout for all channels Matched propagation delay for all channels Optimized dV/dt for loss and EMI trade-off Advanced input filter with shoot-through protection Separate low-side emitter pins for single- or leg-shunt current sensing 3.3 V logic compatible UL certified NTC thermistor for temperature feedback available Various lead forms available including through-hole and surface mounted Microcontrollers Motor control ICs Gate driver ICs Key benefits Ease of design and short time-to-market Compact package with multi lead form options available Wide range of current and voltage ratings in the same package Wide range of modules for 110 VAC or 230 VAC applications in the same footprint Lower losses than similar modules in the market Package overview DIP 29x12F 29 x 12 x 3.1 mm SOP 29x12 29 x 12 x 3.1 mm SOP 29x12F 29 x 12 x 3.1 mm www.infineon.com/ipm 218 Packages XENSIVTM sensors DIP 29x12 29 x 12 x 3.1 mm 500-950 V MOSFETs CIPOSTM Micro is a family of compact IPMs for low power motor drive applications including fans, pumps, air purifiers and refrigerator compressor drives. WBG semiconductors Solution for low power motor drive applications Discrete IGBTs CIPOSTM Micro 20-300 V MOSFETs Applications IPM The package concept is specially adapted to power applications that need good thermal conduction and electrical isolation, EMI-safe control, innovative fault indication, and overload protection. The feature of Infineon's reverse conducting IGBTs or TRENCHSTOPTM IGBTs are used with a new optimized Infineon SOI gate driver IC for excellent electrical performance. Key features Key applications Fan motors Low-power general purpose drives (GPI, servo drives) Pumps Blowers Active filter (active power factor correction) for HVAC Dual-in-line transfer molded package with DCB substrate Current rating from 4 A to 30 A, power rating up to 3 kW Optimized for home appliances and motor drives Rugged SOI gate driver IC technology Advanced protection features UL1577 certified Microcontrollers Motor control ICs Gate driver ICs Key benefits High integration (bootstrap circuit, thermistor) for easy design and system space saving Single platform possible from 4 A to 30 A Enhanced robustness of the advanced IGBT and gate driver IC technology High power density Two kinds of substrates provide cost efficient solution for home appliances UL-certified thermistor Package overview DIP 36x21D 36 x 21 x 3.1 mm www.infineon.com/ipm 219 Packages XENSIVTM sensors DIP 36x21 36 x 21 x 3.1 mm 500-950 V MOSFETs The IPMs are designed to control AC motors in variable speed drives for applications from 4 A up to 30 A such as air conditioning, washing machines, refrigerators, vacuum cleaners, compressors, and industrial drives up to 3 kW. WBG semiconductors CIPOSTM Mini IPMs integrate various power and control components to increase reliability, and to optimize PCB size and system costs. This simplifies the power design and reduces significantly time-to-market. Discrete IGBTs Broad range of applications from PFC to inverter Power ICs CIPOSTM Mini 20-300 V MOSFETs Applications IPM Key benefits The smallest package size in 1200 V IPM class with high power density and best performance Enhanced robustness of gate driver technology for excellent protection Adapted to high switching application with lower power loss Simplified design and manufacturing Package overview www.infineon.com/ipm 220 500-950 V MOSFETs WBG semiconductors Packages XENSIVTM sensors DIP36x23D 36 x 23 x 3.1 mm Key applications Fan motors Low-power general purpose drives (GPI, servo drives) Pumps Blowers Active filter (active power factor correction) for HVAC Discrete IGBTs Key features Fully isolated dual in-line molded module with DCB 1200 V TRENCHSTOPTM IGBT 4 Rugged 1200 V SOI gate driver technology Integrated booststrap functionality Overcurrent shutdown Undervoltage lockout at all channels All of six switches turn-off during protection Cross-conduction prevention Programmable fault clear timing Allowable negative VS potential up to -11 V for signal transmission at VBS of 15 V Low side emitter pins accessible for all phase current monitoring (open emitter) Power ICs IM818 is the first 1200 V IPM that integrated an optimized 6-channel SOI gate driver to provide built-in dead time that prevents damage from transients. The product concept is especially adapted to power applications, which require excellent thermal performance and electrical isolation as well as meeting EMI requirements and overload protection. Gate driver ICs CIPOSTM Maxi IPMs integrate various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three-phase AC motors and permanent magnet motors in variable speed drives applications, such as low-power motor drives, pumps, fan drives and active filters for HVAC (heating, ventilation, and air conditioning). The existing portfolio offers 5 A and 10 A in 1200 V class up to 1.8 kW power rating. The smallest package in 1200 V IPM class offers highest power density and best performance in its class. Motor control ICs Solutions for high reliability and performance application Microcontrollers CIPOSTM Maxi 20-300 V MOSFETs Applications IPM 221 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications RDS(on) max. [] Package Product name 40 Half-bridge 0.05 QFN 7x8 IRSM005-800MH 100 Half-bridge 0.02 QFN 7x8 IRSM005-301MH 250 Half-bridge 0.15 QFN 8x9 IRSM808-204MH 3-phase inverter 0.45. ~ 2.20 QFN 12x12 IRSM836-084MA/IRSM836-044MA IRSM836-024MA Half-bridge 0.80/1.70 QFN 8x9 IRSM807-105MH/IRSM808-105MH IRSM807-045MH 3-phase inverter 1.70 ~ 6.00 QFN 12x12 IRSM836-045MA/IRSM836-035MA/IRSM836-035MB IRSM836-025MA/IRSM836-015MA 3-phase inverter 0.45. ~ 2.20 DIP 29x12F IRSM5y5-084DA/IRSM5y5-044DA 1) IRSM5y5-024DA 1) 0.45. ~ 2.20 SOP 29x12F IRSM5y5-084PA/IRSM5y5-044DPA 1) IRSM5y5-024PA 1) 1.30 ~ 6.00 DIP 29x12F IRSM5y5-065DA/IRSM5y5-055DA 1) IRSM5y5-035DA/IRSM5y5-025DA 1) IRSM5y5-015DA 1) 1.30 ~ 6.00 SOP 29x12F IRSM5y5-065PA/IRSM5y5-055PA 1) IRSM5y5-035PA/IRSM5y5-025PA 1) IRSM5y5-015PA 1) 0.33 DIP 36x21 CIPOSTM Mini 600 2/3-phase inverter IM512-L6A/IM513-L6A Power ICs 500 IGBT based CIPOSTM IPMs Product family Voltage [V] Configuration Rated current [A] Package CIPOSTM Micro 600 3-phase inverter 3.0/4.0 DIP 29x12F IM240-S6Y1B/IM240-S6Y2B IM240-M6Y1B/IM240-M6Y2B/IRSM5y6-076DA 1) 4.0/6.0 DIP 29x12 IM231-M6T2B/IM231-L6T2B 3.0/4.0 SOP 29x12F IM240-S6Z1B IM240-M6Z1B/IRSM5y6-076PA 1) CIPOSTM Mini CIPOSTM Maxi 600 4.0/6.0 SOP 29x12 IM231-M6S1B/IM231-L6S1B PFC integrated 10.0/15.0 DIP 36x21D IFCM10S60GD/IFCM10P60GD IFCM15S60GD/IFCM15P60GD 3-phase inverter 4.0 ~30.0 DIP 36x21 15.0 ~30.0 DIP 36x21D IKCM15L60yD/IKCM20L60yD/IKCM30F60yA 2) IFCM20T65GD/IFCM20U65GD IGCM04F60yA/IGCM04G60yA 2) IGCM06F60yA/IGCM06G60yA 2) IGCM10F60yA/IKCM10H60yA/IKCM10L60yA 2) IGCM15F60yA/ICM15L60yA/IKCM15F60yA/IKCM15H60yA 2) IGCM20F60yA/IKCM20L60yA 2) IKCM30F60yA 2) 650 3-phase interleaved PFC 20 DIP 36x21D 30 DIP 36x21D IFC30T65GD/IFCM30U65GD 1200 2-phase interleaved PFC 3-phase inverter 5.0/10.0 DIP 36x23D IM818-SCC/IM818-MCC 1) y = 0 (with NTC), y = 1 (without NTC) 2) y = G (with NTC), y = H (without NTC) www.infineon.com/ipm 222 Product name Gate driver ICs 250 Motor control ICs CIPOSTM Micro Microcontrollers 500 500-950 V MOSFETs Configuration XENSIVTM sensors CIPOSTM Nano Voltage [V] Packages Product family WBG semiconductors MOSFET based CIPOSTM IPMs Discrete IGBTs CIPOSTM IPM product portfolio 20-300 V MOSFETs Applications IPM Microcontrollers www.infineon.com/industrial-profet www.infineon.com/novalithic www.infineon.com/dc-motor-bridges www.infineon.com/shields-for-arduino www.infineon.com/ipol www.infineon.com/analog-ipol www.infineon.com/xdp www.infineon.com/ipm www.infineon.com/madk XENSIVTM sensors Videos and eLearnings www.infineon.com/mediacenter Simulation Packages Further information, datasheets and documents www.infineon.com/acdc www.infineon.com/coolset www.infineon.com/integrated-powerstages www.infineon.com/digital-controller www.infineon.com/lighting-ics www.infineon.com/isoface www.infineon.com/eicedriver www.infineon.com/industrial-transceivers www.infineon.com/industrial-voltage-regulators www.infineon.com/industrial-dcdc-converters Gate driver ICs Useful links and helpful information Motor control ICs Infineon support for power ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Power ICs support Leveraging the application expertise and advanced technologies of Infineon, the industrial and general purpose gate driver ICs are well suited for many applications such as industrial motor drives, solar inverters, UPS, switch mode power supplies, lighting and major home appliances. Infineon offers a comprehensive portfolio of industrial and general purpose gate driver ICs with a variety of configurations, voltage classes, isolation levels, protection features, and package options. These flexible gate driver ICs are complementary to Infineon IGBTs, MOSFETs, SiC MOSFET, GaN HEMTs and other power switches in discrete gate drive applications, or as a part of integrated power modules. EiceDRIVERTM 1EDN family 500-950 V MOSFETs The expert's choice WBG semiconductors Industrial and general purpose gate driver ICs 20-300 V MOSFETs Applications EiceDRIVERTM Applications PFC Synchronous rectification DC-DC converters Telecom bricks Power tools Industrial SMPS Motor control Wireless charging www.infineon.com/1edn 224 Power ICs Gate driver ICs Motor control ICs Microcontrollers EiceDRIVERTM 1EDN family: the new reference in ruggedness and low power dissipation -10 V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers 5 A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages Cool driver ICs thanks to true rail-to-rail low impedance output stages 4 V and 8 V UVLO (undervoltage lockout) options for instant MOSFET protection during start-up and under abnormal conditions XENSIVTM sensors EiceDRIVERTM 1EDN family: fast, precise, strong and compatible Highly efficient SMPS enabled by 5 ns short slew rates and 5 ns propagation delay precision for fast MOSFET and GaN switching Separate source and sink outputs simplify the application design Industry standard packages and pinout ease system design upgrades Packages EiceDRIVERTM 1EDN family Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. Discrete IGBTs Rugged, cool and fast, single-channel low-side 4/8 A gate driver ICs Product features Product benefits Application benefits 4 V and 8 V UVLO options 19 ns propagation delay Low power dissipation in driver IC Increased GND-bounce robustness 5 A reverse output current robustness Saving switching diodes Industry standard pinout and packages Straight forward design upgrades -10 V robustness of inputs Fast and reliable MOSFET turn-off, independent of control IC High power efficiency - in hard switching PFC with SiC diode - in half-bridges and synchronous rectifications Cooler driver IC operation Higher MOSFET drive capability Instant MOSFET protection during start-up and under abnormal operation Crucial safety margin to drive pulse transformer Increases power density BOM savings Short time-to-market Application overview: 800 W switched mode power supply PFC 500-950 V MOSFETs True rail-to-rail low impedance output stages Fast Miller plateau transition Precise timing WBG semiconductors 4 A source/8 A sink current 6 ns rise/5 ns fall times 5 ns propagation delay precision 20-300 V MOSFETs Applications EiceDRIVERTM LLC Synchronous rectification Discrete IGBTs L CoolSiCTM Schottky diode G6 CoolMOSTM CFD7 or P7 +12 V CoolMOSTM CFD7 or P7 1EDN gate driver OptiMOSTM 5 Power ICs OptiMOSTM 5 CoolMOSTM C7 or P7 1EDN gate driver N GND 2EDN gate driver Pulse transformer Gate driver ICs 1EDN gate driver PWM controller PFC controller 1EDN7511B Orderable part number 1EDN7511BXUSA1 VDD 1 OUT_SRC 2 1EDN8511BXUSA1 OUT_SNK 3 VDD 1 1EDN7512BXTSA1 GND 2 IN+ 3 SOT-23 6-pin 8V SOT-23 5-pin WSON 6-pin www.infineon.com/1edn 225 4V 4V 1EDN8511B 1EDN7512B 1EDN7512G Pinout 1EDN7512GXTMA1 IN- 1 GND 2 GND 3 1EDN 6 IN+ 5 IN- 4 GND 5 OUT 4 IN- 6 IN+ 5 OUT 4 VDD 1EDN 1EDN Microcontrollers 4V Product name XENSIVTM sensors UVLO Packages Package Motor control ICs Isolation Overview The input signal levels of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver IC. If in the application, the ground potential of the gate driver IC shifts excessively false triggering of the gate driver IC can occur. The 1EDN7550/1EDN8550 gate driver ICs have truly differential inputs. Their control signal inputs are largely independent from the ground potential. Only the voltage difference between its input contacts is relevant. This prevents false triggering of power MOSFETs. Product features Truly differential inputs 4 A source current 8 A sink current Separate source/sink outputs Low-ohmic output stage Discrete IGBTs Industrial SMPS Wireless charging Solar micro inverter Product benefits Application benefits 29 ns input minimum pulse width 7 ns propagation delay accuracy 5 A reverse current robustness of the outputs 4 V and 8 V UVLO versions SOT-23 package, 6 pins Control inputs independent from gate driver GND Fast Miller plateau transition Fast shut-off No diode voltage drop near zero gate voltage at turn-off Low power dissipation within gate driver IC Up to 15 MHz switching speed Precise No Schottky clamping diodes required Fast and reliable MOSFET turn-off Small Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Power ICs Telecom DC-DC converters Telecom bricks Power tools Gate driver ICs Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Motor control ICs Applications Server 500-950 V MOSFETs Single-channel low-side gate driver family with truly differential inputs prevents false triggering of power MOSFETs WBG semiconductors EiceDRIVERTM 1EDN7550 and 1EDN8550 20-300 V MOSFETs Applications EiceDRIVERTM OUT_SNK IN- 1 6 OUT_SNK GND GND 2 1EDN7511B 5 1EDN8511B OUT_SRC OUT_SRC IN+ IN+ 3 4 Microcontrollers Pinout www.infineon.com/1EDN-TDI 226 Packages XENSIVTM sensors VDD VDD 1EDN7550 driving CoolMOSTM SJ MOSFET on single-layer PCB 12 V CoolSiCTM Rbias VDD CS RCM1 in + RCM2 in - 1EDN 7550 OUT source RG1 OUT sink RG2 Cbulk Parasitic source inductance Cbias Parasitic GND Inductance WBG semiconductors PWM CoolMOSTM P7 GND 1EDN8550 driving Kelvin source CoolMOSTM SJ MOSFET in boost PFC 12 V CoolSiCTM Discrete IGBTs PWM controller 500-950 V MOSFETs 20-300 V MOSFETs Applications EiceDRIVERTM Rbias CS IN + R CM1 in + IN - in - RCM2 1EDN 8550 Cbias OUT source RG1 OUT sink RG2 Kelvin-source contact Cbulk Parasitic source inductance Rcurrent sense CS Gate driver ICs OUT Power ICs CoolMOSTM P7, C7 or G7 VDD GND Type Ground shift robustness UVLO Package Orderable part number +/- 70 V 4V SOT-23 6-pin 1EDN7550BXTSA1 +/- 70 V 8V SOT-23 6-pin 1EDN8550BXTSA1 static 1EDN7550B +/- 150 V 1EDN8550B +/- 150 V www.infineon.com/TDI 227 Packages XENSIVTM sensors Microcontrollers dynamic Motor control ICs PFC controller EiceDRIVERTM 2EDN family: the new reference in ruggedness and low power dissipation 4 V and 8 V UVLO (undervoltage lockout) options for instant MOSFET protection under abnormal conditions -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers or driving MOSFETs in TO-220 and TO-247 packages 5 A reverse output current robustness eliminates the need for Schottky switching diodes and reduces bill-of-material Cool driver ICs from true rail-to-rail low impedance output stages Power tools Industrial SMPS Motor control Solar Gate driver ICs Applications Server Telecom DC-DC converters Bricks 500-950 V MOSFETs EiceDRIVERTM 2EDN family: fast, precise, strong and compatible Highly efficient SMPS enabled by 5 ns short slew rates and 10 ns propagation delay precision for fast MOSFET and GaN switching Numerous deployment options due to two 4 A/5 A channels. 1 ns channel-to-channel accuracy to use two channels in parallel Industry standard packages and pinout ease system design upgrades WBG semiconductors EiceDRIVERTM 2EDN family overview Dual-channel driver ICs are the crucial link between digital control ICs and powerful MOSFET and GaN switching devices. Driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. Discrete IGBTs Rugged, cool and fast, dual-channel low-side 4 A/5 A driver IC Power ICs EiceDRIVERTM 2EDN family 20-300 V MOSFETs Applications EiceDRIVERTM Product benefits Application benefits Fast Miller plateau transition Precise timing Low power dissipation in driver IC True rail-to-rail low impedance output stages 4 V and 8 V UVLO options 19 ns propagation delay for both control and enable inputs -10V robustness of control and enable inputs 5 A reverse output current robustness 2 independent channels Excellent 1 ns channel-to-channel accuracy Industry standard pinout and packages www.infineon.com/2edn 228 Fast and reliable MOSFET turn-off, independent of control IC Increased GND-bounce robustness Saves switching diodes Option to increase drive current by truly concurrent switching of 2 channels Straight forward design upgrades High power efficiency - in hard switching PFC with SiC diode - in half-bridges and synchronous rectifications Cooler driver IC operation Higher MOSFET drive capability Instant MOSFET protection under abnormal operation Crucial safety margin to drive pulse transformer Increases power density BOM savings One IC covering many applications Short time to market Packages 5 A souce/sink current 5 ns rise/fall times <10 ns propagation delay precision XENSIVTM sensors Product features Microcontrollers Motor control ICs Package overview 20-300 V MOSFETs Applications EiceDRIVERTM Application overview 800W 130kHz switched mode power supply PFC LLC Sync. rec. 110 VAC - 240 VAC OptiMOSTM 5 CoolMOSTM C7 or P7 500-950 V MOSFETs CoolSiCTM Schottky diode G6 CoolMOSTM CFD7 or P7 +12 V GND WBG semiconductors OptiMOSTM 5 CoolMOSTM CFD7 or P7 GND PFC controller 2EDN Gate driver 2EDN Gate driver Pulse transformer PWM controller ICE3PCS01G Discrete IGBTs 2EDN Gate driver ICE2HS01G or XMC4000 UVLO 4V DSO 8-pin 8V 4V TSSOP 8-pin 8V 4V Product name Orderable part number Direct 2EDN7524F 2EDN7524FXTMA1 Inverted 2EDN7523F 2EDN7523FXTMA1 Direct 2EDN7424F 2EDN7424FXTMA1 Direct 2EDN8524F 2EDN8524FXTMA1 Inverted 2EDN8523F 2EDN8523FXTMA1 Direct 2EDN7524R 2EDN7524RXUMA1 Inverted 2EDN7523R 2EDN7523RXUMA1 Direct 2EDN7424R 2EDN7424RXUMA1 Direct 2EDN8524R 2EDN8524RXUMA1 Inverted 2EDN8523R 2EDN8523RXUMA1 Direct 2EDN7524G 2EDN7524GXTMA1 Inverted 2EDN7523G 2EDN7523GXTMA1 Current Industry standard pinout configuration 5A ENA 1 4A INA 2 GND 3 INB 4 5A 4A 5A 2EDN7524 8 ENB 7 OUTA 6 VDD 5 OUTB www.infineon.com/2edn 229 Packages XENSIVTM sensors Microcontrollers WSON 8-pin Inputs Motor control ICs Package Gate driver ICs Power ICs Isolation Efficiency gain and lower losses Lower switching losses in half-bridges due to fast and accurate turn on/off Perfect for new digital, fast high resolution PWM control including light load optimization Enabling higher system efficiency and higher power density designs Improved thermal behavior at smaller form factor LGA with 1 mm, DSO with 2.3 mm package height versus volume > 1 cm3 for pulse transformers Eliminates two costly protection diodes on the gate driver outputs Improving long term competitive cost position, integration and mass manufacturability Robust design against switching noise Floating drivers are able to handle large inductive voltage over- and undershoots Very good common mode transient immunity CMTI >150 V/ns Undervoltage lockout function for switch protection Protection and safe operation Ideal for use in high power designs with fast switching transients Reliable CT coreless transformer PWM signal chain to turn on high side MOSFETs Output- to -output channel isolation Functional level galvanic isolation Flexible configurations HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS Lower EMI by ground isolation, driver proximity to MOSFETs or the use of 4-pin Kelvin source MOSFETs Regulatory safety Functional for primary-side control Reinforced for secondary-side control Simplified safety approval through component (VDE884-x, UL1577) and system (IEC60950, IEC62386) certificates Input- to output channel isolation Functional and reinforced galvanic isolation Device overview UVLO SLDO UVLO TX INA INB Control logic DISABLE ENABLE NC DTC Dead time control RX Input- to-output isolation VDDI SLDON SLDOP TX GNDI Logic Channel-to-channel isolation RX Logic GNDA VDDB 230 500-950 V MOSFETs OUTB GNDB EiceDRIVERTM 2EDi product familiy device diagram www.infineon.com/2edi WBG semiconductors VDDA OUTA UVLO Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions Microcontrollers Optimized for area and system BOM Isolation and driver in one package Low power dissipation due to low on-resistance Output stages with 5A reverse current capability Discrete IGBTs System benefits XENSIVTM sensors Fast power switching with accurate timing Available with 4 A/8 A and 1 A/2 A source/sink currents Propagation delay typ. 37 ns with 3 ns channel-to-channel mismatch Max. delay variation ~14 ns Product benefits Packages Product key features Power ICs 2EDi family overview The EiceDRIVERTM 2EDi product family is designed for use in high-performance power conversion applications. Very strong 4 A/8 A source/sink dual-channel gate drivers increase efficiency in CoolMOSTM and OptiMOSTM MOSFET half-bridges. The low propagation delay of 37 ns, combined with highly accurate and stable timing overtemperature and production, enables further efficiency gains within and across galvanically isolated power stages or in multi-phase/ multi-level topologies. The availability of functional and reinforced isolated drivers in different packages makes these a perfect fit for both primary side and (safe) secondary side control. Gate driver outputs come with a high 5 A reverse current capability and 150 V/ns CMTI robustness for high dv/dt power loops. For slower switching or driving smaller MOSFETs, 1 A/2 A peak current product variants are available as well. Gate driver ICs Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate drivers with accurate and stable timing Motor control ICs EiceDRIVERTM 2EDi product family 20-300 V MOSFETs Applications EiceDRIVERTM 20-300 V MOSFETs Applications EiceDRIVERTM System application diagram 2EDS8265H 4 A/8 A 2EDS8165H 1 A/2 A 2EDF7275F 2EDF7275FXUMA1 2EDF7175F 2EDF7175FXUMA1 2EDF7275K 2EDF7275KXUMA1 2EDF7235K 2EDF7235KXUMA1 2EDS8265H 2EDS8265HXUMA1 2EDS8165H 2EDS8165HXUMA1 Package PWM Input type WB-DSO16 10.3 x 10.3 mm LGA 13-pin 5x5 mm 0.65 mm lead pitch Input to output isolation Gate driver UVLO Isolation class Rating Surge testing Safety certification 4V Functional VIO =1.5 kVDC n.a. n.a. Dead-time control 4 A/8 A NB-DSO16 10 x 6 mm LGA13 5.0 x 5.0 mm Driver source/ Sink current Discrete IGBTs DSO 16-pin Wide body 1.27 mm lead pitch Power ICs Orderable part number (OPN) Functional isolation 8 mm DSO 16-pin Narrow body 1.27 mm lead pitch Part number 2EDF7275K 4 A/8 A 2EDF7235K 4 A/8 A w. DTC Reinforced isolation 4 mm CPU (VRM) POL power WBG semiconductors Functional isolation Non-isolated DC-DC Brick 1 A/2 A Dual Mode (IN_A, IN_B) no yes 4 A/8 A 8V 1 A/2 A Reinforced VDE0884-10 VIOTM = 8 kVpeak UL1577 (VDE0884-1x) VIOSM = 10 kVpeak IEC60950 (IEC60065) VISO = 5.7 kVrms IEC62368 (UL1577) CQC no Gate driver ICs 2EDF7275F 4 A/8 A 2EDF7175F 1 A/2 A TCOM PDU 500-950 V MOSFETs Sync Rec Primary stage PFC Motor control ICs EMI Filter TCOM supplies Isolated DC-DC www.infineon.com/2edi 231 Packages XENSIVTM sensors Microcontrollers For further latest device information, configurations and application notes visit www.infineon.com/2EDi Key features Positive and negative gate drive currents: Fast turn-on/turn-off GaN switch slew-rates Low ohmic outputs: Source: 0.85 Sink: 0.35 Single-channel galvanic isolation: Firmly hold gate voltage at zero, during off-phase: Avoids spurious GaN switch turn-on Up to 50% lower dead time losses Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle: Robust and energy efficient SMPS designs Short time to market Integrated galvanic isolation: Robust operation in hard-switching applications Safe isolation where needed Reinforced: VIOTM = 8000 Vpk (VDE 0884-10 pending) VIOWM = 1420 VDC CMTI min: 200 V/ns Timing: Minimum output pulse width: 18 ns Propagation delay accuracy: 13 ns Key applications www.infineon.com/gan-eicedriver 232 500-950 V MOSFETs Packages XENSIVTM sensors Charger Microcontrollers Motor control ICs Key use cases Totem pole PFCs Vienna rectifiers Multilevel topologies Resonant LLC Functional: VIO= 1500 VDC VIOWM = 510 Vrms (DSO 16-pin) VIOWM = 460 Vrms (LGA 5x5) WBG semiconductors Key advantages of designing with the GaN EiceDRIVERTM family Discrete IGBTs CoolGaNTM e-mode HEMTs are best driven by Infineon's EiceDRIVERTM ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market. Power ICs Single-channel isolated gate driver ICs for high voltage GaN switches Gate driver ICs GaN EiceDRIVERTM family 20-300 V MOSFETs Applications GaN EiceDRIVERTM family 20-300 V MOSFETs Applications GaN EiceDRIVERTM family GaN EiceDRIVERTM ICs evaluation environment 500-950 V MOSFETs High frequency (1 MHz) half-bridge evaluation board EVAL_1EDF_G1_HB_GAN Key components: GaN switches: 2x CoolGaNTM 600 V e-mode HEMTs (IGOT60R070D1) GaN drivers: 2x GaN EiceDRIVERTM (1EDF5673K) WBG semiconductors Order code: EVAL_1EDF_G1_HB_GAN High power SMPS application example High voltage CoolGaNTM High voltage CoolGaNTM High voltage CoolGaNTM OptiMOSTM OptiMOSTM OptiMOSTM OptiMOSTM High voltage CoolGaNTM CoolMOSTM High voltage CoolGaNTM High voltage CoolGaNTM EiceDRIVERTM 2EDF7275 LLC controller GaN EiceDRIVERTM 1EDS5663H* EiceDRIVERTM 2EDF7275 *GaN EiceDRIVERTM ICs are single-channel products DSO 16-pin 150 mil DSO 16-pin 300 mil Microcontrollers LGA 13-pin 5x5 mm Package Product 1EDF5673K 1EDF5673F OPN 1EDF5673KXUMA1 1EDF5673FXUMA1 1EDS5663HXUMA1 Isolation (input to output) VIO = 1500 VDC VIO = 1500 VDC VIOTM = 8000 Vpk (VDE0884-10 pending) Source/sink output resistance 0.85 /0.35 0.85 /0.35 0.85 /0.35 UVLO 4.5 V / 5.0 V 4.5 V / 5.0 V 4.5 V / 5.0 V www.infineon.com/gan-eicedriver 233 Motor control ICs GaN EiceDRIVERTM 1EDF5673* 1EDS5663H XENSIVTM sensors PFC controller Gate driver ICs Power ICs EMI filter Packages AC LINE CoolMOSTM Synchronous rectifier Resonant LLC Discrete IGBTs Totem pole Full-bridge PFC Level-shift silicon-on-insulator (SOI) gate driver ICs 2ED2304S06F - 650 V half-bridge gate driver with integrated bootstrap diode (BSD) DC-Bus Discrete IGBTs VS to Load C HIN PWM_L LIN GND LO to Opamp / comparator GND Power ICs PWM_H - DC-Bus Product features Potential applications Infineon thin-film SOI technology Motor drives, general purpose inverters Fully operational to +650 V Refrigeration compressors Floating channel designed for bootstrap operation Half-bridge and full-bridge converters in offline AC-DC Output source/sink current capability +0.36 A/-0.7 A power supplies for telecom and lighting Integrated ultrafast, low RDS(ON) bootstrap diode Tolerant to negative transient voltage up to -50 V (pulse width is up 500 ns) given by SOI technology Power dissipation of Infineon SOI 10 ns typ., 60 ns max. propagation delay matching dV/dt immune 50 V 120.3 Gate drive supply range from 10 to 20 V Infineon SOI HS+LS driver Max. temperature 66.6 Undervoltage lockout for both channels 3.3 V, 5 V and 15 V input logic compatible RoHS compliant Gate driver ICs +5 V VB HO Motor control ICs VCC Microcontrollers VCC WBG semiconductors Typical application diagram 500-950 V MOSFETs The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied. 20-300 V MOSFETs Applications SOI gate driver ICs XENSIVTM sensors Standard HS+LS driver Max. temperature 122.2 20.4 234 Packages DC = 300 V; CoolMOSTM P7 in D-Pak; 300 kHz switching frequency www.infineon.com/2ED2304 Applications SOI gate driver ICs 20-300 V MOSFETs 6ED2230S12T - 1200 V three-phase gate driver with overcurrent protection and integrated bootstrap diode (BSD)* VCC HIN 1, 2, 3 LIN 1, 2, 3 FLT/EN/RCIN ITRIP DS(ON) VB 1, 2, 3 HO 1, 2, 3 To load VS 1, 2, 3 Power ICs LO 1, 2, 3 COM VSS DC BUS- Typical applications Industrial drives, motor control, general purpose inverters Commercial air-conditioning (CAC) Negative VS transient robustness of Infineon SOI PW (ns) 0 0 200 400 600 800 1000 Gate driver ICs Discrete IGBTs DC BUS+ Floating channel designed for bootstrap operation Output source/sink current capability +0.35 A/-0.65 A Integrated ultrafast, low R bootstrap diode Tolerant to negative transient voltage up to -100 V (pulse width is up 700 ns) given by SOI technology Undervoltage lockout for both channels 3.3 V, 5 V, and 15 V input logic compatible Overcurrent protection (ITRIP 5% reference) Fault reporting, automatic fault clear and enable function on the same pin (RFE) Matched propagation delay for all channels Integrated 460 ns dead time protection Shoot-through (cross-conduction) protection 2.5kV HBM ESD protection WBG semiconductors Typical application diagram Motor control ICs Product features Infineon thin-film SOI technology Fully operational to +1200 V 500-950 V MOSFETs The 6ED2230S12T is a 1200 V three-phase SOI gate driver with an integrated bootstrap diode and overcurrent protection, with typical 0.35 A source and 0.65 A sink currents in a DSO-24 package (DSO-28 with 4 pins removed) for driving IGBTs. Proprietary HVIC and latch-immune CMOS technologies enable a robust monolithic design. A current-trip function which terminates all six outputs can also be derived from this resistor. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify the HVIC's use in high-frequency applications. SOA -60 -80 -100 -120 XENSIVTM sensors Evaluation board available: EVAL-M1-6ED2230-B1 -40 Microcontrollers Minus Vs (V) -20 * Coming soon 235 Packages Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T Applications JI gate driver ICs Product portfolio Part number Voltage class [V] IRS2008S 200 IRS2007S Configuration Channels Source/sink current typ. [mA] Deadtime typ. [ns] Typ. propagation delay [ns] Half-bridge 2 290/600 520 680 150 IN, SD +8.9/-8.2 8-lead SOIC 2 200 Half-bridge 2 290/600 520 160 150 HIN, LIN +8.9/-8.2 8-lead SOIC 2 IRS2005S 200 High- and low-side 2 290/600 - 160 150 HIN, LIN +8.9/-8.2 8-lead SOIC 2 IRS2005M 200 High- and low-side 2 290/600 - 160 150 HIN, LIN +8.9/-8.2 14-lead 4x4 MLPQ 2 on Control inputs UVLO typ. [V] Package MSL off IRS2005 replaces IRS2001 (IRS2001 is not recommended for new designs) / IRS2007 can replace IRS2003 / IRS2008 can replace IRS2004 Up to 200 V Power ICs Simplified application diagram IRS2008S VCC VCC IN SD COM VB HO VS to load LO Gate driver ICs IN SD WBG semiconductors Infineon offers 200 V ICs tailored for low-voltage (24 V, 36 V, and 48 V) and mid-voltage (60 V, 80 V, and 100 V) motor drive applications. TheseMOSFETdrivers provide full driver capability with extremely fast switching speeds, designed-in ruggedness and low power dissipation. The 200 V driver ICs are offered in standard packages and pinout configurations with various logic input options for high design flexibility and fast time-to-market. Low side supply voltage (VCC) and floating channel supply (VBS) undervoltage lockout (UVLO) ensures reliable start-up operation. Discrete IGBTs New IRS200 x 200 V half-bridge, high and low-side gate driver family with VCC and VBS UVLO 500-950 V MOSFETs 20-300 V MOSFETs Level-shift junction isolation (JI) gate driver ICs The new IRS2890DS half-bridge gate driver provides typical 0.22 A source and 0.48 A sink currents in a 14-lead SOIC package for IGBT and MOSFETs. The IRS2890DS integrates overcurrent protection, fault reporting and bootstrap FET. Simplified application diagram DC BUS+ Advanced input filter Deadtime and cross-conduction prevention logic Fully operational to +600 V offset voltage Logic operational for VS* of -8 V Operational for transient negative VS -50 V with a 50 ns pulse width Integrated bootstrap FET Integrated comparator (with 0.5 V 5 % reference) for overcurrent protection Fault and enable multifunction pin www.infineon.com/gatedriver *High-side floating well supply offset voltage 236 Reliable switching Protection under abnormal operation Improved reliability High power capability VCC VB HIN HO LIN IRS2890DS RFE Easy-to-use, straight-forward design Fast time-to-market BOM savings COM DC BUS- VS LO ITRIP XENSIVTM sensors Product benefits Packages Product features Microcontrollers Motor control ICs New 600 V half-bridge gate driver with overcurrent protection (OCP) The 1ED44176N01F is a low-voltage, non-inverting gate driver designed for ground-referenced applications such as digitally controlled power-factor correction (PFC) circuits requiring overcurrent protection (OCP). OCP is typically implemented using a current measurement circuit with a comparator such as LM293 and a network of resistors and capacitors. 1ED44176N01F provides up to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate currentsensing threshold tolerance of 5%. 1ED44176N01F also integrates fault-output reporting to the controller and driver enable functionality on the same pin. The driver IC also has separate logic and power ground pins for operational robustness. Simplified application diagram VOUT VIN VCC 1ED44176N01F I/O1 I/O2 CFLTC IN VCC EN/FLT VSS FLTC OUT OCP COM GND Key features Key specifications System benefits Integrated overcurrent protection comparator with accurate OCP threshold Single pin for fault output and enable function Programmable fault clear time Low quiescent supply current Max IQCC: 750 A Separate logic ground and gate driver return VSS and COM pins Undervoltage lockout (UVLO) protection www.Infineon.com/1ED44176 237 0.5 V overcurrent threshold with accurate 5 percent tolerance Internal Schmitt trigger comparator for the enable function External capacitor (CFLTC) sets the length of the fault clear time Specific UVLO level for IGBTs (typ. on/off = 11.9 V / 11.4 V) Potential space savings up to 50 percent and cost savings up to 20 percent compared to the discrete solution Flexible fault clear time set-up for different microcontroller processing speeds Minimizes power consumption Avoids noise coupling from output to input which improves noise immunity XENSIVTM sensors Application note, PSPICE or SiMetrix models, and evaluation board, EVAL-1ED44176N01F are available at www.Infineon.com/1ED44176 Microcontrollers Motor control ICs Gate driver ICs Potential applications General purpose low-side gate driver for single-ended topologies (e.g. digitally controlled PFC or digital power supplies) Residential and commercial air conditioners Home appliances Industrial applications Power ICs VDD Discrete IGBTs Microcontroller Eliminates switching loss at low VCC supply voltage Packages Product features Overcurrent detection with positive voltage input +0.8 A/-1.75 A output source/sink current capability +0.5 V overcurrent threshold with 5% tolerance Single pin for fault output and enable function Programmable fault clear time CMOS Schmitt-triggered inputs 3.3 V, 5 V and 15 V input logic-compatible Output in phase with input Separate logic and power ground 2 kV ESD HBM 500-950 V MOSFETs 1ED44176N01F - 25 V low-side gate driver with integrated overcurrent protection and fault/enable function WBG semiconductors Non-isolated low-side gate driver ICs 20-300 V MOSFETs Applications Non-isolated gate driver ICs Applications EiceDRIVERTM Enhanced 2ED020I12-F2 1ED020I12-FT 1ED020I12-B2 1ED020I12-BT 2ED020I12-FI Single Dual Single Single Single Half Bridge Package (all 300 mil) DSO-16 DSO-36 DSO-16 DSO-16 DSO-16 DSO-18 Functional Functional Functional Basic (VDE 0884-10) Basic (VDE 0884-10) Functional on high side DESAT, UVLO DESAT, UVLO DESAT, UVLO, two-level turn-off DESAT, UVLO DESAT, UVLO, two-level turn-off UVLO, OPAMP, comparator Input [V] 4.1/3.8 4.1/3.8 4.1/3.8 4.1/3.8 4.1/3.8 12/11 Output [V] 12/11 12/11 12/11 12/11 12/11 12/11 500 500 500 500 500 - - Galvanic isolation Protection function UVLO DESAT charge current [A] Bipolar output supply Active miller clamp - Inverting and non-inverting inputs - Combinable enable/shutdown and fault feedback signals - TLSET Typical propagation delay [ns] - - - - 170 170 170 + TLTOff 170 170 + TLTOff 85 Isolation definitions Functional isolation Isolation between conductive parts which is necessary only for the proper functioning of the equipment Basic isolation (VDE 0884-10) Isolation applied to live parts to provide basic protection against electric shock WBG semiconductors Discrete IGBTs 1ED020I12-F2 Configuration Power ICs EiceDRIVERTM Enhanced Product features Available in wide body package with 8 mm creepage distance Suitable for operation at high ambient temperature Active miller clamp Short circuit clamping and active shutdown 100 kV/s CMTI Precision DESAT protection All logic pins are 5 V CMOS compatible. 2ED020I12-F2 is the dual-channel version of 1ED020I12-F2 in DSO-36 package. 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. Gate driver ICs The EiceDRIVERTM 1ED Enhanced gate driver ICs are galvanic isolated singlechannel IGBT and SiC MOSFET drivers in DSO-16 package that provide output current capabilities of typically 2 A. The precision DESAT function for IGBT is also an excellent solution for SiC MOSFET short-circuit protection. Motor control ICs 1200 V galvanically isolated enhanced gate driver ICs 500-950 V MOSFETs 20-300 V MOSFETs EiceDRIVERTM Enhanced gate driver IC family 1ED020I12-F2 FLT RST GND1 IN+ INRDY /FLT /RST www.infineon.com/gatedriver www.infineon.com/gdisolated 238 VCC2 +15 V 1 DESAT CLAMP OUT NC GND2 1k 10R 220p XENSIVTM sensors RDY 100n VCC1 VEE2 Packages IN 10k SGND 10k +5 V Microcontrollers Simplified application diagram EiceDRIVERTM 1ED Compact gate driver IC family 1200 V galvanically isolated single-channel gate driver ICs WBG semiconductors 500-950 V MOSFETs Infineon's new EiceDRIVERTM 1EDC Compact 300 mil family is recognized under UL 1577 with an insulation test voltage of VISO = 2500 V(rms) for 1 min. The functional isolated EiceDRIVERTM 1EDI Compact 150 mil and 300 mil families are also available. The EiceDRIVERTM 1ED Compact family is the perfect driver for superjunction MOSFETs such as CoolMOSTM, IGBTs, silicon carbide (SiC) MOSFETs such as CoolSiCTM, and IGBT modules. Optimized pinout for low inductance power supply 1EDI Compact 150 mil 1EDI60I12AF 1EDI40I12AF 1EDI20I12AF 1EDI05I12AF 1EDI60N12AF 1EDI20N12AF 1EDI30I12MF 1EDI20I12MF 1EDI10I12MF 1EDI Compact 300 mil 1EDI60I12AH 1EDI40I12AH 1EDI20I12AH 1EDI05I12AH 1EDI60H12AH 1EDI20H12AH 1EDI30I12MH 1EDI20I12MH 1EDI10I12MH 1EDC Compact 300 mil 1EDC60I12AH 1EDC40I12AH 1EDC20I12AH 1EDC05I12AH 1EDC60H12AH 1EDC20H12AH 1EDC30I12MH 1EDC20I12MH 1EDC10I12MH Typ. output current [A] 10/-9.4 7.5/-6.8 4/-3.5 1.3/-0.9 10/-9.4 4/-3.5 5.9/-6.2 4.4/-4.1 2.2/-2.3 Output configuration Separate sink/ source outputs Separate sink/ source outputs Separate sink/ source outputs Separate sink/ source outputs Separate sink/ source outputs Separate sink/ source outputs 300 300 125 125 300 300 300 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 Output [V] 12/11.1 12/11.1 12/11.1 12/11.1 12/11.1 (H) 9.1/8.5 (N) 12/11.1 (H) 9.1/8.5 (N) 11.9/11 11.9/11 11.9/11 100n VCC1 GND1 IN+ OUTVCC2 GND2 Active Miller clamp 10R 3R3 1 +15 V +5 V 100n SGND IN VCC1 GND1 OUT+ 10R CLAMP IN+ VCC2 IN- GND2 1 +15 V www.infineon.com/gatedriver www.infineon.com/1EDcompact 239 Packages XENSIVTM sensors Microcontrollers IN- OUT+ Gate driver ICs 300 2.85/2.75 +5 V IN Active Miller clamp Input [V] Simplified application diagram Separate sink/source outputs SGND Active Miller clamp Motor control ICs Typ. propagation delay [ns] 300 UVLO Active Miller clamp Power ICs Discrete IGBTs Product features Provide DSO-8 300 mil wide body package with 8 mm creepage distance Up to 10 A typical peak rail-to-rail output Suitable for operation at high ambient temperature Separate source and sink outputs or active miller clamp More than 100 kV/s CMTI 20-300 V MOSFETs Applications EiceDRIVERTM 1ED Compact Part Number Isolation rating 1EDS20I12SV Reinforced isolation according VDE 0884-10 (VIORM= 1420 V) and UL 1577 certified with VISO= 5 kV (rms) for 1 min 1EDU20I12SV UL 1577 certified with VISO= 5 kV (rms) for 1 min 1EDI20I12SV Functional isolation Evaluation board available: EVAL-1EDS20I12SV www.infineon.com/SRC 240 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Potential applications AC and brushless DC motor drives High-voltage DC-DC converters UPS systems, servo drives Gate driver ICs Product features Real-time adjustable gate current control DESAT Overcurrent protection Soft turn-off shut down Two-level turn-off Drive power modules up to 900 A Drive 1200 V single-channel IGBT driver Unique: NPC1 short circuit protection for three-level inverters Low EMI during low load conditions and high efficiency during high load conditions Reduction or elimination of dV/dt filter Motor control ICs The 1EDx20I12SV family is tailored for industrial drive applications such as those using 1200 V power modules for current up to 900 A like the EconoDUALTM 3. The driver meets today's long-term stability requirements for industrial applications. It is offered in a DSO-36 package with a package width of 300 mil. It is RoHS compliant, green, and halogen-free. Microcontrollers To turn on the IGBT, the driver works as an adjustable current source in conjunction with an external PMOS transistor and a sense resistor. To turn off the IGBT, the driver uses a 2 A MOSFET output stage. Several important and advanced protection functions are integrated. The driver includes desaturation protection for IGBTs and overcurrent protection for sense IGBTs via the fault status output pin. Two ready-state output pins indicate proper driver power supply level and normal driver operation. Two-level turn-off with adjustable timing and voltage protects against excessive overvoltage in case of the IGBT operating at overcurrent or a short circuit. XENSIVTM sensors The new SRC EiceDRIVERTM family, which includes 1EDS20I12SV, 1EDU20I12SV, and 1EDI20I12SV, is addressing the latest generation of highly efficient low-EMI electric drive systems, with lower EMI and improved efficiency. Based on the Infineon's coreless transformer technology, it is the first high voltage isolated gate driver on the market with dynamic slew-rate control (SRC), which allows on-the-fly dV/dt control of electric drives through precise gate current control, providing the best trade-off between minimum power dissipation and minimum EMI depending on operating conditions. Packages 1200 V single-channel slew-rate control (SRC) gate driver family with reinforced isolation 20-300 V MOSFETs Applications SRC EiceDRIVERTM family Applications SRC EiceDRIVERTM family 5V 5V 20-300 V MOSFETs Simplified application diagram VCC2 VCC1 VCC2 /FLT DESAT RDY2 CS RDY1 OCOFF RDESAT RS 500-950 V MOSFETs ON PADP DDESAT CDESAT CD RSENSE C1 Control unit RD T1 T2 INP GATE INN CZ RSOFF VZ PADN WBG semiconductors EN ROFF RF SPEED OFF CF SIGI SOFF SIGO PRB RPRB2 VEE2 GND1 RPRB1 VCC2 C3 C2 Discrete IGBTs GND2 GND Feature - real-time gate current control Effect - gate turn-on tunable across a very large dV/dt range: 0 Adjustable gate current -0.5 -1.5 Adjustable dV/dt range Minimum speed Maximum speed -2 -2.5 Preboost phase Time Evaluation board available: EVAL-1EDS20I12SV www.infineon.com/SRC -4 0 200 400 600 IC [A] 800 1000 Packages dV/dt = f(IC, 25C, VSPEED) XENSIVTM sensors -3 -3.5 241 Microcontrollers -1 dV/dt [kV/s] IGATE [A] SRC controlled gate current in 11 levels Motor control ICs Gate driver ICs Power ICs 1EDS-SRC driver board with EconoDUALTM 3 power module CMP General purpose comparator included Current sense CS Senses the motor phase current through an external shunt resistor, converts from analog to digital signal, and transfers the signal to the low side Dedicated JFET control JFETDRIVE Optimized to drive SiC JFET Desaturation protection DESAT Protects the IGBT at short circuit Enable EN Dedicated pin terminates all outputs Fault reporting FAULT-RPT Indicates an overcurrent or undervoltage shutdown has occurred Fault reset FAULT-RST Dedicated pin resets the DESAT-FAULT-state of the chip High-voltage start-up HVSTART Provides easy and fast circuit start-up while enabling low circuit standby losses Integrated bootstrap diode BSD Integrated bootstrap reduces BOM Operational amplifier OPAMP An independent op-amp for current measurement or overcurrent detection Self-oscillating (oscillator) OSC Integrated front end oscillator Overcurrent protection (ITRIP) OCP Ensures safe application operation in case of overcurrent Overtemperature shutdown SD-OT Internal overtemperature protection circuit protects the IC against excessive power loss and overheating Programmable dead time DT-PROG Dead time is programmable with external resistor for flexible design Programmable fault clear time FLTC The length of the fault clear time period (tFLTC) is programmed by external capacitor which connected between FLTC and VSS (CFLTC). Programmable shutdown SD-PROG A shutdown feature has been designed into a pin Separate pin for logic ground SEP-GND Dedicated pin or logic ground for improved noise immunity Separate sink/source outputs SEP-OUT Simplifies gate resistor selection, reduces BOM, and improves dV/dt control Shoot-through protection STP Additional shoot-through protection logic such as interlock Short-circuit clamping SC-CLAMP During short circuit the IGBT's gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage. Shutdown SD Dedicated pin disables the IC outputs Soft overcurrent shutdown SD-SOFT Dedicated pin turns off the desaturated transistor, preventing overvoltages Truly differential inputs TDI 70 VDC and 150 VAC ground-shift robustness of low-side gate driver ICs Two-level turn-off TLTO Lowers VCE overshoots at turn-off during short circuits or overcurrent events UL 1577 UL Double galvanic isolation certification Undervoltage lockout UVLO Ensures safe application operation by avoiding unexpected driver behavior at low voltages VDE 0884-10 or VDE 0884-11 VDE Reinforced galvanic isolation certifications for non-optical couplers Infineon's industrial and general purpose gate driver ICs utilize the following technologies: (1) Coreless transformer technology (CT) (3) Level-shifting junction-isolation technology (JI) (2) Level-shifting silicon-on-insulator technology (SOI) (4) Non-isolated technology (N-ISO) Infineon gate driver IC technologies Non-isolated Level-shift Low voltage Comprehensive families of single- and dual-low-side drivers with flexible output current, logic configurations, and UVLOs Rugged technology of the high- Junction isolation 20 years proven technology Largest portfolio of 200 V, 600 V, 700 V and 1200 V industry standard gate drivers using rugged proprietary HVIC process voltage gate drivers, and the state-of-the-art 130-nm process www.infineon.com/gatedriver www.infineon.com/gdfinder 242 Galvanic isolation Silicon on insulator Infineon SOI technology for high-voltage applications with inherent integrated bootstrap diode capability and lower level-shift losses Industry best-in-class robustness against negative VS transient spikes Coreless transformer Magnetically-coupled isolation technology provides galvanic isolation (functional, basic and reinforced) Strongest gate-drive output currents (up to 10 A) reducing need for external booster circuits 500-950 V MOSFETs Integrated brake IGBT driver with protection Comparator WBG semiconductors Ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout is in effect Discrete IGBTs SD-ACT BRAKE Power ICs Active shutdown Brake chopper Gate driver ICs Benefits Protection against inadvertent dynamic turn-on because of parasitic Miller effects Motor control ICs Abbreviation M-CLAMP Microcontrollers Features Active Miller clamp XENSIVTM sensors Infineon's gate driver IC solutions are the expert's choice. With more than 500 reliable and efficient gate driver solutions, we provide a comprehensive portfolio for virtually any application. Addressing various application requirements, Infineon delivers solutions with an assortment of gate driver topologies, voltage classes, drive capability, features and package options to optimize performance, minimize size and reduce cost. Some discrete gate driver ICs are also available in bare die. The table below shows additional gate driver IC features available in the current portfolio. Packages Industrial and general purpose gate driver ICs 20-300 V MOSFETs Applications Gate driver ICs portfolio Applications Gate driver ICs portfolio 20-300 V MOSFETs Product overview To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to by application topology. 2500/2500 9.1/8.2 650 200/200 290/700 360 / 700 1500/2500 78/169 180/260 9.1 / 8.3 12.2/11.2 8.9/8.2 8.9/8.2 9/8 9/8 9/8 11/9 300/310 85/85 220/220 N.A. 200/220 200/350 8.9/8.2 200/750 210/360 220/480 250/500 600 290/600 360/700 1900/2300 2000/3000 2300/2800 4.1/3.8 8.9/8.2 8.9/8.2 8.9/8.2 8.9/7.7 8.6/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.6/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 9.1/8.3 12.5/11.6 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 10.2/9.3 9.1/8.3 12.5/11.6 200 290/600 8.9/8.2 120 2000/6000 3000/6000 4000/6000 7/6.5 150/680 500/500 150/750 150/150 150/680 150/750 200/220 200/750 300/310 400/420 220/180 270/680 440/440 300/310 400/420 150/160 150/680 47/47 www.infineon.com/gatedriver www.infineon.com/gdfinder * Coming soon 1) Please contact sales team for additional information 243 CT JI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI CT JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI SOI SOI JI JI JI JI JI JI JI JI SOI SOI JI JI JI JI JI Features Package 500-950 V MOSFETs WBG semiconductors 2ED020I12-FI IR2214 2ED2182S06* 2ED21824S06* 2ED2183S06* 2ED21834S06* 2ED2184S06* 2ED21844S06* 2ED2108S06* 2ED21084S06* 2ED2109S06* 2ED21094S06* 2ED21091S06* 2ED2304S06F NEW 2ED020I06-FI IR2304 IR25601 IR21531 IR21531D IR25603 IRS2153(1)D IR2108 IR21084 IR2308 IR25606 IR2109 IR21091 IR21094 IR2302 IR2103 IR2104 IR25602 IRS2890D NEW IR2111 IRS2304 IRS2103 IRS2104 IRS2111 IRS2(1,3)08 IRS21084 IRS2109 IRS21091 IRS21094 2EDL05N06P 2EDL05I06P IRS2183 IR2183 IR(S)21834 IRS2184 IR2184 IR21844 IRS21844 IR2114 2EDL23N06P 2EDL23I06P IRS2007 NEW IRS2008 NEW 2EDL8112* 2EDL8113* 2EDL8114* Discrete IGBTs 85/85 440/440 Power ICs 12.2/11.2 10.2/9.3 Gate driver ICs 1200 1500/2500 2000/3000 Motor control ICs Base PN Microcontrollers Prop delay off/on typ. [ns] XENSIVTM sensors UVLO on/off typ. [V] Packages IO+/IOtyp. [mA] Technology Voltage class [V] Comparator Operational amplifier Desaturation protection Enable Fault reporting Integrated bootstrap diode Overcurrent protection Programmable dead time Programmable shutdown Self-oscillating (oscillator) Separate pin for logic ground Shoot-through protection Shutdown Soft overcurrent shutdown DSO-8 DSO-14 DSO-16 DSO-16 WB DSO-18 DIP-8 DIP-14 SSOP-24 VDSON-8 VQFN-14 CHIP1 Half-bridge gate driver ICs Base PN 1200 250/500 350/540 165/375 600 200/350 250/500 165/375 600/600 700/750 550/550 490/530 530/530 400/425 530/500 530/530 425/675 600/1300 700/750 490/530 530/530 6ED2230S12* IR2233 IR2235 IR2238 6ED003L06-F2 6EDL04I06(N,P) 6EDL04N06P IR2136 IR21363 IR21365 IR21368 IR21364 IRS2334 IRS2336 IRS2336D IRS23364D IRS23365D IR213(0,2) IR2131 IR2133 IR2135 6ED003L02-F2 6EDL04N02P SOI JI JI JI SOI SOI SOI JI JI JI JI JI JI JI JI JI JI JI JI JI JI SOI SOI www.infineon.com/gatedriver www.infineon.com/gdfinder * Coming soon 1) Please contact sales team for additional information 244 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs 200 11.4/10.4 8.6/8.2 10.4/9.4 11.2/10.2 11.7/9.8 11.7/9.8 9/8.1 8.9/8.2 11.1/10.9 11.1/10.9 8.9/8.2 10.4/9.4 11.1/10.9 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 9/8.7 8.7/8.3 8.6/8.2 10.4/9.4 11.7/9.8 9/8.1 Package WBG semiconductors 350/650 Features Discrete IGBTs Prop delay off/on typ. [ns] Power ICs UVLO on/off typ. [V] Brake chopper Operaltional amplifier Desaturation protection Enable Fault reporting Integrated bootstrap diode Overcurrent protection Programmable dead time Separate pin for logic ground Shoot-through protection Shutdown DSO-20 WB DSO-24 DSO-28 WB DIP-28 LCC-32 MQFP-64 TSSOP-28 VQFN-28 VQFN-34 CHIP1 IO+/IOtyp. [mA] Technology Voltage class [V] 500-950 V MOSFETs Three-phase gate driver ICs 20-300 V MOSFETs Applications Gate driver ICs portfolio Base PN 165/170 2000/2000 12/11 1750/1750 2200/2300 12/11.1 300/300 9.1/8.5 120/115 125/120 4000/3500 12/11.1 1200 300/300 4400/4100 4000/4000 16.9/16.4 80/80 5900/6200 12/11.1 300/300 SRC/2000 SRC/2000 SRC/2000 11.9/11 11.9/11 11.9/11 460/460 460/460 460/460 10000/9400 12/11.1 7500/6800 125/120 300/300 160/240 9/8 8.6/8.2 250/500 1600/3300 160/240 9/8 215/140 4000/8000 4000/8000 4000/8000 4.5/5.0 4.5/5.0 4.5/5.0 41/37 41/37 41/37 290/600 650 150/200 105/125 150/150 200/170 NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT JI JI JI JI JI JI JI JI JI JI JI CT CT CT www.infineon.com/gatedriver www.infineon.com/gdfinder SRC=Turn on slew rate control 1) Please contact sales team for additional information 245 Packages XENSIVTM sensors Microcontrollers 250 105/125 10.3/9 7.2/6.8 8.6/8.2 10.3/9 7.2/6.8 9.2/8.3 600 500 200 100 215/140 1EDI05I12A 1EDC05I12AH 1ED020I12-F2 1ED020I12-B2 1ED020I12-FT 1ED020I12-BT 1EDI10I12M 1EDC10I12M 1EDI20N12A 1EDI20H12A 1EDC20H12A 1EDI20I12A 1EDC20I12A 1EDI20I12M 1EDC20I12M 1EDI30J12C 1EDI30I12M 1EDC30I12M 1EDI40I12A 1EDC40I12A 1EDI20I12SV 1EDU20I12SV 1EDS20I12SV 1EDI60H12A 1EDC60H12A 1EDI60I12A 1EDC60I12A IRS25752 IR2117 IR2118 IR212(7,8) IR21271 IRS211(7,8) IRS2127 IRS21271 IR2125 IRS20752 IRS10752 1EDS5663H 1EDF5673F 1EDF5673K WBG semiconductors 300/300 Discrete IGBTs 12/11.1 Package Power ICs 1300/900 Features Gate driver ICs Prop delay off/on typ. [ns] Motor control ICs UVLO on/off typ. [V] Active Miller clamp Dedicated control for JFET Desaturation protection Enable Fault reporting Fault reset Overcurrent protection Separate pin for logic ground Separate sink/source outputs Soft overcurrent shutdown Two-level turn-off UL 1577 VDE 0884-10 DSO-8 DSO-8 300mil DSO-16 DSO-16 WB DSO-19 DSO-36 DIP-8 SOT23-6 TFLGA-13 CHIP1 IO+/IOtyp. [mA] Technology Voltage class [V] 500-950 V MOSFETs Single high-side gate driver ICs 20-300 V MOSFETs Applications Gate driver ICs portfolio Applications Gate driver ICs portfolio 8/7 37 / 37 4.2/3.9 NEW NEW NEW NEW NEW NEW CT CT CT CT CT CT CT Prop delay off/on typ. [ns] Base PN 200 1000/4000 2000/7000 1000/2500 80 4000/8000 25 800/1750 1500/1500 300/550 1700/1500 20 4000/8000 1600/3300 50/60 50/60 50/50 45 / 45 45 / 45 50/50 50/50 50/50 50/50 19/19 200/150 IR11662 IR11672A IR1161 1EDN7550 1EDN8550 1ED44176N01F IRS44273 IR44252 IR44272 IR44273 1EDN7511 1EDN8511 1EDN7512 IR2121 N-ISO N-ISO N-ISO NEW N-ISO NEW N-ISO NEW N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO Package www.infineon.com/gatedriver www.infineon.com/gdfinder 246 Packages XENSIVTM sensors 5 10.55/9 10.55/9 4.5/4.4 4.2/3.9 8/7 11.9/11.4 10.2/9.2 5/4.15 5/4.15 5/4.15 4.2/3.9 8/7 4.2/3.9 8.9/8 Features Motor control ICs UVLO on/off typ. [V] Technology IO+/IOtyp. [mA] Automatic minimum on time protection Enable Fault reporting Overcurrent protection Programmable fault clear time Programmable minimum on time Separate sink/source outputs Synchronous rectification Truly differential inputs DSO-8 DIP-8 SOT23-5 SOT23-6 WSON-6 Single low-side gate driver ICs Voltage class [V] 500-950 V MOSFETs TFLGA-13 DSO-36 (w/o 4 pins) DSO-16 WB DSO-16 VDE 0884-10 UL 1577 Separate pin for logic ground Fault reset Fault reporting WBG semiconductors 4.2/3.9 2ED020I12-F2 2EDF7275F 2EDF7175F 2EDS8265H 2EDS8165H 2EDF7235K 2EDF7275K Discrete IGBTs 4000/8000 165/170 Power ICs 250 12/11 Package Gate driver ICs 650 2000/2000 4000/8000 1000/2000 4000/8000 1000/2000 Features Microcontrollers 1200 Disable Base PN Desaturation protection Prop delay off/on typ. [ns] Deadtime control UVLO on/off typ. [V] Active Miller clamp IO+/IOtyp. [mA] Technology Voltage class [V] 20-300 V MOSFETs Dual high-side/half-bridge Applications Gate driver ICs portfolio 290/700 650 9.1/8.2 200/200 2500/2500 200/350 8.9/8.2 8.9/8.2 4.1/3.8 8.9/8.2 4.1/3.8 200/220 210/360 8.9/8.2 150/160 250/500 8.6/8.2 8.6/8.2 8.9/8.2 8.9/8.2 8.9/8.2 12.5/11.6 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.6/8.2 8.6/8.2 8.5/8.2 8.9/8.2 8.9/8.2 6/5.5 8.6/8.2 8.5/8.2 8.9/8.2 9/8.2 9/8.2 8.6/8.2 105/125 130/135 150/160 290/600 600 360/700 1900/2300 2500/2500 4000/4000 500 2500/2500 290/600 200 1000/1000 220/180 94/120 120/130 170/170 94/120 120/130 150/160 60/60 75/80 65/95 NEW JI SOI SOI SOI SOI JI JI JI JI JI JI JI JI JI JI JI JI SOI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI 500-950 V MOSFETs CHIP1 VQFN-14 DIP-14 DIP-8 DSO-16 WB DSO-14 www.infineon.com/gatedriver www.infineon.com/gdfinder * Coming soon 1) Please contact sales team for additional information 247 Packages XENSIVTM sensors Microcontrollers Motor control ICs 3000/3000 200/220 400/420 IR2213 2ED2106S06* 2ED21064S06* 2ED2181S06* 2ED21814S06* IR2106 IR21064 IR2301 IR25604 IRS2301 IR2101 IR2102 IR2112 IRS2112 IRS2101 IRS2106 IRS21064 2EDL05I06BF IRS2181 IR2181 IR21814 IRS21814 IR2113 IR25607 IRS2113 IRS2186 IRS21864 IRS21867 IR2110 IRS2110 IRS2005 IRS2011 IR2011 IR2010 WBG semiconductors 225/280 Discrete IGBTs 10.2/9.3 Package Power ICs 2000/2500 Features Gate driver ICs 1200 DSO-8 Base PN Shutdown Prop delay off/on typ. [ns] Separate pin for logic ground UVLO on/off typ. [V] Integrated bootstrap diode IO+/IOtyp. [mA] Technology Voltage class [V] 20-300 V MOSFETs High-side and low-side gate driver ICs Applications Gate driver ICs portfolio IR2086S JI 500-950 V MOSFETs PG-DSO-16 Self-oscillating (oscillator) WBG semiconductors 40/60 200 50/50 25 2300/3300 N.A. 65/85 20 5000/5000 19/19 19/19 N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO Features Package www.infineon.com/gatedriver www.infineon.com/gdfinder 248 Packages XENSIVTM sensors Microcontrollers 4000/4000 4.2/3.9 8/7 4.2/3.9 IR1168 IR11682 IR11688 IRS44262 IRS4426 IRS4427 IR25600 IR442(6,7) 2EDN752(3,4) 2EDN852(3,4) 2EDN7424 Discrete IGBTs 70/60 80/100 60/250 Gate driver ICs 8.1/7.6 8.1/7.6 4.55/4.35 10.2/9.2 TSSOP-8 1000/4000 1000/4000 1000/4000 Base PN WSON-8 Prop delay off/on typ. [ns] DIP-8 UVLO on/off typ. [V] DSO-8 IO+/IOtyp. [mA] Technology Voltage class [V] Automatic minimum on time protection Dual low-side gate driver ICs Power ICs 7.25/6.8 Package Motor control ICs 1200/1200 Features Synchronous rectification 100 Programmable dead time Base PN Programmable minimum on time Prop delay off/on typ. [ns] Overcurrent protection UVLO on/off typ. [V] Enable IO+/IOtyp. [mA] Technology Voltage class [V] 20-300 V MOSFETs Full bridge gate driver ICs www.infineon.com/gatedriver www.infineon.com/gdfinder 249 XENSIVTM sensors Microcontrollers Motor control ICs IRS25751 N-ISO Complementary: high-voltage start-up IC Base PN Discrete IGBTs WBG semiconductors Features SOT23-5 DIP-8 DSO-16 WB DSO-8 500-950 V MOSFETs Package Power ICs Gate driver ICs SOT23-5 Features Overtemperature shutdown Voltage class [V] JI JI 20-300 V MOSFETs Overcurrent protection Complementary: current sense ICs Packages 480 Base PN High voltage start-up 600 IR2175 IR25750 Current sense Voltage class [V] Enable Technology Technology Applications Gate driver ICs portfolio Package Gate driver selection tool To simplify the gate driver selection process, Infineon offers an online easy-to-use gate driver selection tool. By selecting a few key parameters, the tool quickly guides you in finding the right driver for your application. 20-300 V MOSFETs Applications Gate driver ICs support For recommended gate drivers by application, visit www.infineon.com/gdapplication to download the PDF version of the gate driver application matrix. Home Appliances Industrial Discover the next level of power and efficiency Reliable, high quality solutions for the most rugged situations Infineon's gate driver ICs utilize level-shift silicon-on-insulator technology (SOI), and level-shift junction isolation technology (JI) to meet the high performance requirements in home appliance applications. Infineon's gate driver ICs are the expert's choice. With the breadth and depth of the portfolio, customers can quickly design and build efficient and robust systems for every industrial application. General Industrial Air Conditioner (Residential) IRS4427S IRS44273L 2EDN8524F 2EDN8524F IRS4427S IRS2153(1)D PFC SMPS ICE5QR4770AZ (CoolSETTM) DC-DC 1EDI20N12AF Commercial Lighting Hood Fan/ Ceiling Fan/ Freezer Fan Power Tools (AC) IRS44273L 2EDN8524F 1EDN8511B Refrigerator/ Washer/ Dryer Vacuum Cleaner IRS4427S IRS44273L 2EDN8524F 6EDL04N02PR IRS2007S IRS2301S 6EDL04I06PT IR2136S 2ED2304S06F 6EDL04I06PT IR2136S 2EDL05I06PF 6EDL04I06PT IRS2890DS 2ED2304S06F IR2235 2EDL23I06PJ IR2214SS Inverter (<3 kW) 2EDL05I06PF IRS2181(4) IRS2890DS SR Motor Inverter 2EDL05N06PF 2ED2304S06F IRS2153(1)D Half-bridge Topology Commercial Sewing Machine Drives Forklift Truck/ CAV UPS 1ED020I12-F2 1EDI10I12MF 2ED020I12-F2 Compressor/ Fan/CAC 6EDL04I06PT IR2136S IRS2103 Inverter (<5 kW) 6EDL04(I,N)06PT 2EDL23I06PJ IR2214SS 1EDI30I12MF 1EDI60I12AF 1EDU20I12SV 6EDL04I06PT IR2136S IRS2334 Inverter (<200 kW) 6EDL04I06PT IR2133 2EDL23I06PJ 1EDI40I12AF 1ED020I12-BT 2ED020I12-FI 1EDI60N12AF 2EDL23I06PJ IRS2127(1) 1EDI60I12AF 2EDL23I06PJ IR7106S 1EDI60I12AF 1ED020I12-B2 1EDU20I12SV 1EDU20I12SV 1ED020I12-B2 1EDI60I12AF IRS4427S IRS44273L 2EDN8524F PFC 1EDI60I12AF 1ED020I12-F2 1EDU20I12SV IRS4427S IRS44273L 2EDN8524F 2EDL05N06PJ 2EDL23N06PJ 1EDI20N12AF 1EDI60N12AF IRS4427S IRS44273L 2EDN7524F DC-DC (1 kW - 100 kW) 2EDN8524F IR7106S IRS2186(4) 1EDI05I12AF 1EDI10I12MF IRS44273L Brake Chopper 2ED020I12-F2 1ED020I12-F2 1ED020I12-FT Active Bridge Rectifier 2EDL05N06PF 2ED2304S06F Motor control ICs Sync-Buck Building Fans & Pumps SMPS IRS2117 IRS25752L IRS20752L HS-Buck Automatic Door Opening Systems Inverter (<30 kW) 6EDL04I06PT IR2136S IRS2890DS 2ED2304S06F Inverter (<1 kW) Electric Tools (Battery) Air Conditioner (Commercial) Gate driver ICs Home Appliances Automatic opening system Recommended Gate Drivers Charger Recommended Gate Drivers Power ICs Access the gate driver selection tool at www.infineon.com/gdfinder Discrete IGBTs WBG semiconductors 500-950 V MOSFETs Scan to find the right driver Mobility & Battery Driven Renewable Energy Full range of best-in-class components Powering an energy-smart world Recommended Gate Drivers Renewable Energy Heat Pump 6EDL04I06PT IR2136S 2ED2304S06F IR2214SS IR2213 IR2235 1EDI20I12AF Inverter (<2 kW) Charger Recommended Gate Drivers Mobility & Battery Driven Inverter DC-DC PFC HB (LLC) Sync-Buck Drones/ E-Bike/ E-Scooter 6EDL04N02PR IRS2334 IRS2007S EV Charger/ Battery Charger IRS2186S General Traction 1EDI60I12AF IR2214SS IR2213 Lawn Mower/ Vacuum/ Service Robotics www.infineon.com/gatedriver www.infineon.com/gdfinder Inverter Boost Inverter DC-AC 6EDL04N02PR 1EDI20I12AF 1EDI40I12AF IR2214SS IRS4427S IRS44273L 2EDN7524F 1EDI60I12AF 1EDU20I12SV IR2010S BLDC 250 Light Electric Vehicle (LEV) 6EDL04N02PR IR2136S 2EDL05N06PF IRS2183 Inverter (>2 kW) 6EDL04N02PR IR2136S IRS2007S String Boost String Inverter Central Boost/SMPS Central Inverter Solar Inverter Microcontrollers Infineon provides a comprehensive portfolio of high-performance gate driver ICs for photovoltaic inverters. By combining EiceDRIVERTM with super-junction MOSFETs such as CoolMOSTM, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiCTM, as well as IGBT and SiC modules, Infineon enables solutions that maximizing uptime and energy production. IRS4427S 2EDN7524F IRS44273L 2ED2304S06F IR2114SS 2EDL05N06PJ 2EDN8524F IRS4427S 1EDI20N12AF 1ED020I12-F2 IR7106S 1EDI60N12AF 2EDN8524F 1EDI60I12AF 1EDI60I12AF 1ED020I12-F2 IR2214SS XENSIVTM sensors For battery-driven applications, saving battery power is the key. Infineon offers an excellent selection of gate driver ICs providing thehighest-possible energy efficiency and top precision. Improving efficiency is the number one objective in the field of photovoltaics. Efficiency gains of as little as one percent can still yield enormous returns in renewable energy segment. Packages From EV charger and light electric vehicle (LEV) to service robotics and drones, Infineon's family of configurable half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide the required power and efficiency. Automotive-specific gate drivers qualified according to AEC-Q100 are also available. Videos www.infineon.com/gdvideointro www.infineon.com/gdvideo1EDN www.infineon.com/gdvideo2EDL www.infineon.com/mediacenter Motor control ICs www.infineon.com/200vhvic www.infineon.com/1EDcompact www.infineon.com/700vhvic www.infineon.com/microhvic www.infineon.com/gan-eicedriver www.infineon.com/2edi Microcontrollers Further information, datasheets and documents www.infineon.com/gatedriver www.infineon.com/1edn www.infineon.com/gdapplication www.infineon.com/2edn www.infineon.com/gdiso www.infineon.com/gdbrochure www.infineon.com/ifxdesigner www.infineon.com/gdfinder www.infineon.com/crs www.infineon.com/SiC-GD www.infineon.com/eicedriver www.infineon.com/TDI XENSIVTM sensors Useful links and helpful information Packages Infineon support for gate driver ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Gate driver ICs support iMOTIONTM products are highly integrated devices used to control variable speed drives. By integrating both the required hardware and algorithms to perform control of permanent magnet synchronous motors (PMSM), they provide the shortest time to market for inverterized motor systems at the lowest system and development cost. Key features Ready-to-use and field-proven motor control solution Various integration levels - from motor controller to SmartIPM Multiple integrated protection features Functional safety acc. IEC/UL 60335-1 supported Our markets Air conditioners Home appliances Fans Pumps Cooling compressors Motor control Discrete IGBTs Key benefits Easy to use - no motor control coding required High performance and energy optimized solution Reduced cost of ownership due to R&D and BOM savings Fastest time to market 500-950 V MOSFETs Flexible and scalable platform for motor control solutions WBG semiconductors iMOTIONTM 20-300 V MOSFETs Applications iMOTIONTM iMOTIONTM product offering Power ICs iMOTIONTM SmartIPM iMOTIONTM MCE supervision Sensors Communication Custom functions M Motor control PFC control Protection Safety functions Scripting Gate driver 3-phase inverter M Motor control PFC control Protection Safety function Scripting Communication Motion Control Engine (MCE) built-in sinusoidal FOC algorithm MCE + additional MCU Cortex-M0 core available for system/application code Full inverter system very compact PQFN 12x12 mm2 package up to ~80 W IMC100T IMC300A IMM100A/IMM100T Gate driver ICs Motion Control Engine (MCE) Motion Control Engine (MCE) Motor control ICs 3-phase inverter iMOTIONTM ecosystem PC tools and evaluation kits available to configure, test and fine-tune the drive inverter. MCEWizard SW tool to generate initial drive control parameters iMOTIONTM Link Isolated debug interface to iMOTIONTM devices MCEDesigner SW tool to test, monitor and fine-tune the motor drive - including trace features for live monitoring the drive status iMOTIONTM MADK Platform Modular and scalable application kit platform for variable speed drives www.infineon.com/iMOTION www.infineon.com/iMOTION-software 252 Tools and software Get the necessary software here: Microcontrollers ARM(R) Cortex(R)-M0 (optional) Gate driver XENSIVTM sensors iMOTIONTM Packages iMOTIONTM Controller Using the iMOTIONTM MADK standardized platform interface, different control and power boards can be combined in a system that perfectly matches the requirements of the application. This modular approach allows developers the maximum flexibility and scalability during evaluation and development phase at affordable cost. Get a motor running in less than an hour! Motor control boards Wide range of power boards EVAL-M1-36-84A CIPOSTM Nano-power board IRSM836-084MA ~110 V/80 W EVAL-M1-099M IRMCK099 Control card EVAL-M1-05F310 CIPOSTM Nano-power board IRSM005-310MH -100 V/300 W EVAL-M1-183 IRMCF183 Control card EVAL-M1-IM818-A CIPOSTM-Maxi power board IM818-MCC -1200 V/2600 W Gate driver ICs M1 M1 Power ICs EVAL-M1-101T IMC101T-T038 Control card 500-950 V MOSFETs The iMOTIONTM modular application design kit (MADK) evaluation platform covers motor drive applications up to 2 kW. The platform offers a modular and scalable system solution with different control board options and a wide range of power boards. While the M1 platform provides control of a permanent magnet synchronous motor (PMSM), the M3 platform also integrates the power factor correction (PFC) implemented as a boost or totem pole PFC. WBG semiconductors Infineon`s motor control evaluation platform Discrete IGBTs iMOTIONTM Modular Application Design Kit 20-300 V MOSFETs Applications iMOTIONTM MADK Motor control ICs EVAL-M1-101TH IMC101T-F048 Control card www.infineon.com/iMOTION www.infineon.com/MADK 253 EVAL-M3-CM615TN CIPOSTM mini with totem pole PFC IKCM15H60GA ~220 V/800 W XENSIVTM sensors M3 M3 EVAL-M3-302 IMC302A-F064 Control card Microcontrollers Power boards with PFC EVAL-M3-CM615PN CIPOSTM mini with boost PFC IFCM15S60GD ~220 V/800 W Packages Motor + PFC control boards EVAL-M3-102T IMC102T-F064 Control card Applications XMCTM microcontrollers 20-300 V MOSFETs XMCTM One microcontroller platform - countless solutions XMC4000 family ARM(R) Cortex(R)-M4 up to 144 MHz Built-in DSP, SFPU Peripherals up to 144 MHz Event request unit (ERU) TAmbient: -40C to 125C Discrete IGBTs AURIXTM AURIXTM 2nd generation 1st generation AURIXTM 2nd generation XMC4000 AURIXTM TC2x1) AURIXTM TC3x1) ARM(R) Cortex(R)-M0 CPU up to 48 MHz Flash: 8-200 kB Package: 16-64 pins ARM(R) Cortex(R)-M4F CPU up to 144 MHz Flash: 64 kB-2 MB Package: 48-196 pins TriCoreTM Up to 3x multicore CPU up to 300 MHz Flash: 0.5-8 MB Package: 80-516 pins TriCoreTM Up to 6x multicore CPU up to 300 MHz Flash: 1-16 MB Package: 100-516 pins Gate driver ICs XMC1000 Power ICs AURIXTM 1st generation Integration 1) AURIXTM devices add safety and CAN FD XMC4000 www.infineon.com/xmc 254 EtherCAT, +drives MultiCAN - 6 nodes LQFP-100/144 LFGBGA-196 XMC4100 XMC4200 XMC4100/XMC4400 XMC4500 Basic control and connectivity VQFN-48 LQFP-64 Server power 150 ps HRPWM LQFP-64/100 Industrial drives, Hall and encoder I/F, demodulator, LQFP-64/100/144 LFBGA-144 MultiCAN - 3 nodes, Ethernet, +drives ext. memory, SD/MMC LQFP-100/144 LFBGA-144 XMC1000 ARM(R) Cortex(R)-M0 up to 48 MHz core/ 96 MHz peripheral 8-200 KB flash up to 105C 1.8-5.5 V XMC4800, XMC4300 Industrial drives, Hall and encoder I/F, demodulator, LQFP-100/144 LFBGA-196 XMC1400 XMC1400 XMC1400 XMC1400 Flicker-free, 4-Ch LED, SMPS, connectivity VQFN-40/64 LQFP-64 SMPS control, connectivity VQFN-40/64 LQFP-64 Hall and encoder I/F, MATH co-processor, CAN VQFN-40/64 LQFP-64 Multi CAN - 2 nodes VQFN-48/64 LQFP-64 XMC1100 XMC1200, XMC1300 XMC1300 XMC1300 Basic control and connectivity TSSOP-16/38 VQFN-24/40 Flicker-free, 4-Ch LED, SMPS, connectivity TSSOP-16/28/38 VQFN-24, -40 SMPS control, connectivity, TSSOP-16/38 VQFN-24/40 Hall and encoder I/F, MATH co-processor, TSSOP-16/38 VQFN-24/40 XMCTM entry LED lighting Digital power Motor control XENSIVTM sensors ARM(R) Cortex(R)-M4F up to 144 MHz core 64 kB-2 MB Flash up to 125C XMC4700/4800 Motor control ICs Performance XMC4000 Consumer and industrial XMC1000 XMC1000 Microcontrollers XMC4000 WBG semiconductors XMC1000 family ARM(R) Cortex(R)-M0 up to 48 MHz Peripherals up to 96 MHz One-time event request unit (ERU) VDD: 1.8 to 5.5 V TAmbient: -40C to 105C Industrial I/O Packages XMCTM MCU portfolio RAM: 8 kB up to 352 kB Flash: 16 kB up to 2 MB Accurate analog mixed-signal peripherals Fast timer/PMW peripherals Rich communication interfaces 16-pin to 196-pin count packages 500-950 V MOSFETs Infineon's XMCTM 32-bit industrial microcontroller portfolio is designed for efficiency and demanding industrial applications. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs XMCTM ecosystem, enablement and partners Gate driver ICs Third parties Hand-in-hand with third party tools DAVETM Apps Examples Graphicalconfigurable applicationoriented software components XMCTM Lib and DAVETM Apps composed to create more complex applications Product DAVETM SDK Modify, enhance, and develop DAVETM Apps DAVETM Professional free-of-charge IDE XMCTM 32-bit industrial microcontroller portfolio Motor control ICs Idea Low-level driver library/ APIs for peripherals Microcontrollers XMCTM Lib Packages In addition to a rich third party ecosystem and enablement landscape, which support the entire development cycle from evaluation to production. For more www.infineon.com/xmc-ecosystem From evaluation to production XENSIVTM sensors Infineon enablement for XMCTM MCUs DAVETM - www.infineon.com/dave Professional and free-of-charge development platform XMCTM library for Embedded Coder(R) - www.infineon.com/matlab Model-based design from MATLAB(R) and Simulink(R) environment, download free of charge IEC60730 class B library for XMCTM - www.infineon.com/iec60730 Available for XMCTM industrial microcontrollers free of charge Microcontroller/ProbeTM XMCTM - www.infineon.com/ucprobexmc Free-of-charge version of microcontroller/ProbeTM for XMCTM MCUs to build user interfaces for visualizing, observing, and control of the internals of XMCTM MCUs XMCTM link - www.infineon.com/xmclink Functional isolated debug probe, based on SEGGER J-Link technology Power ICs A comprehensive set of tools, products, components, and services are available for fast and efficient design with XMCTM microcontrollers. 255 Highlights include analog mixed-signal, timer/PWM and communication peripherals powered by either an ARM(R) Cortex(R)-M0 core (XMC1000 family) or a Cortex(R)-M4 core with a floating point unit (XMC4000 family). - - - 2x - VQFN 24/40 TSSOP 16/38 16-200 kB RAM 16 kB 1/2 Up to 12 Up to 3 1x - - 1x 2x - VQFN 24/40 TSSOP 16/28/38 Flash 8-200 kB RAM 16 kB 1/2 Up to 12 Up to 3 1x 1x 1x 1x 2x - VQFN 24/40 TSSOP 16/38 Flash 32-200 kB RAM 16 kB 1/2 Up to 12 Up to 4 2x 2x 2x 1x 4x Up to 2 VQFN 40/48/64 LQFP 64 Power ICs Supply voltage range 1.8-5.5 V Temperature range -40C ... 85C/105C 256-512 kB RAM 80 kB Flash 512 MB RAM 128-160 kB Flash 1.5-2 MB RAM 276-352 kB Flash 1-2 MB RAM 200-352 kB 2/2 Up to 9 2 ch 2x 1x 1x 1x - 4x Up to 2 - - - VQFN 48 TQFP 64 2/2 Up to 9 2 ch 2x 1x 4 ch 1x - 4x 2x 1x - - VQFN 48 TQFP 64 2/2 Up to 14 2 ch 2x 1x - - - 4x 2x 1x 1x 1x LQFP 100 4/4 Up to 18 2 ch 4x 2x 4 ch 2x 4ch 4x 2x 1x 1x - TQFP 64 LQFP 100 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 4x Up to 3 1x 1x - LQFP 100/144 LFBGA 144 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x 1x 1x - LQFP 100/144 LFBGA 196 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x 1x 1x 1x LQFP 100/144 LFBGA 196 Supply voltage range 3.1-3.6 V Temperature range -40C ... 85C/125C www.infineon.com/xmc www.infineon.com/dave 256 Gate driver ICs EtherCAT(R) Flash Ethernet 128 kB USB 256 kB RAM CAN 2.0B Flash US IC 144 40 kB Demodulator XMC48x 144 256 kB RAM POSIF XMC47x 120 Flash HRPWM (150 ps) XMC45x 120 20 kB CCU8 (4 ch) XMC44x 144 64-128 kB RAM Package CCU4 (4 ch) XMC43x 80 Flash Connectivity DAC1 2-bit XMC42x 80 Timer/PWM Number of channels XMC41x Analog ADC1 2-bit/S&H ARM(R) Cortex(R)-M0 Frequency [MHz] Memory Discrete IGBTs Flash WBG semiconductors 1x Motor control ICs 96 - Microcontrollers 48 Up to 12 XENSIVTM sensors 16 kB Packages 64 CAN 2.0B 32 US IC BCCU 64 POS IF 32 8-64 kB RAM Package CCU8 (4 ch) - Flash Connectivity 1/1 ADC1 2-bit/S&H 64 Timer/PWM CCU4 (4 ch) XMC14x 32 Analog Analog comparators XMC13x - Memory Number of channels XMC12x Peripherals XMC11x Frequency ARM(R) Cortex(R)-M0 Co-processor Clocks 500-950 V MOSFETs Infineon's XMCTM 32-bit industrial microcontroller portfolio is designed for system cost and efficiency for demanding industrial applications. It comes with the most advanced peripheral set in the industry. Fast and largely autonomous peripherals can be configured to support individual needs. 20-300 V MOSFETs Applications XMCTM microcontrollers Applications 20-300 V MOSFETs 500-950 V MOSFETs www.infineon.com/xmc 257 Specification Infineon components Vin 12 VDC MCU XMC4200 or XMC1300 Vout_nom 3.3 VDC MOSFETs OptiMOSTM BSC0924NDI Iout 2A MOSFET half-bridge driver IRS2011S Pout 6W Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors XMCTM digital power explorer kit Customer benefits Easy entry in digital power control applications Understand the details of voltage/peak current control and how to extract the maximum of XMCTM devices DAVETM v4 APPs for buck converter and many more examples Microcontrollers Key features Synchronous buck converter evaluation kit controlled with XMC4200 or XMC1300 ARM(R) Cortex(R)-M MCUs Onboard resistive load banks Featuring BSC0924NDI dual N-channel OptiMOSTM and IRS2011S high- and low-side gate driver Different control schemes possible - Voltage mode control - Peak current mode control (with slope compensation) XENSIVTM sensors The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps into digital power control with XMCTM microcontrollers. It showcases both XMCTM families Cortex(R)-M microcontrollers: XMC4000 and XMC1000, 30V dual N-channel OptiMOSTM MOSFETs and IRS2011S gate drivers. The kit includes two different control card options, XMC1300 control card (ARM(R) Cortex(R)-M0) and XMC4200 control card (ARM(R) Cortex(R)-M4F), which allow designers to evaluate both XMCTM microcontroller families and make the right price/performance choice for their application. Packages XMCTM digital power explorer kit Key features Classic PFC boost stage digitally controlled with XMC1302 including voltage and current loops Protections, including cycle-by-cycle current protection Run time debug with isolated UART to PC interface and PC software 380VDC MOSFET 600 V CoolMOSTM C7 Iout 2A MOSFET driver EiceDRIVERTM 2EDN7524F non-isolated PWM frequency 130 kHz Diode CoolSiCTM Schottky diode 650 V G5 THD <10% Auxiliary PSU ICE2QR4780Z Power factor >0.9 from 20% load Efficiency 97% (peak) 600 W half-bridge LLC evaluation board with 600 V CoolMOSTM C7 SJ MOSFET with digital control The 600 W LLC digital control evaluation board shows how to design the half-bridge LLC stage of a server SMPS with the target to meet 80+ Titanium standard efficiency requirements. For this purpose, the latest CoolMOSTM technologies, 600V CoolMOSTM C7 or P6 superjunction MOSFETs have been used on the primary side, and OptiMOSTM low voltage power MOSFET in SuperSO8, BSC010N04LS, in the synchronous rectification secondary stage in combination with QR CoolSETTM ICE2QR2280Z, high- and low-side driver 2EDL05N06PF, low-side gate driver 2EDN7524F and a XMC4200 microcontroller. Key features: 600 W LLC half-bridge stage with synchronous rectification (SR) All controlled with XMC4200 including: - Start up (PWM to PFM) and burst-mode algorithms - Adaptive dead time and capacitive-mode detection - No hard commutation at any condition www.infineon.com/xmc 258 Specification Infineon components Vin 350-410VDC Vout_nom 12 VDC MOSFET SR BSC010N04LS Iout 50 A HB driver 2EDL05N06PF Pout 600 W LLC HB MOSFET CoolMOSTM IPP60R190P6 fres 157 kHz Auxiliary PSU ICE2QR2280Z www.infineon.com/800w-pfc-eval MCU XMC4200 (VQFN48) www.infineon.com/600w-llc-eval XENSIVTM sensors 600 W LLC digital control Customer benefits Learn LLC topology with a complete system solution from Infineon - HW and SW available Close to customer solution - High efficiency 97.8% - Reliability and power density Power ICs XMC1302 (TSSOP38) Vout_nom Gate driver ICs MCU Motor control ICs 90-265 VAC Discrete IGBTs Infineon components Vin Microcontrollers Specification Packages 800 W PFC CCM with XMC1300 Customer benefits High efficient PFC stage with a complete system solution from Infineon HW and SW available Higher switching frequency permits higher power density 500-950 V MOSFETs The 800 W PFC CCM evaluation board demonstrates the design and practical results of an 800 W 130 kHz platinum server PFC evaluation board based on Infineon devices, in terms of power semiconductors, non-isolated gate drivers, analog and digital controllers for the PFC converter, as well as flyback controller for the auxiliary supply. This evaluation board verifies the performance of the latest 600V CoolMOSTM C7 superjunction MOSFET technology working at 130 kHz in a PFC CCM boost converter along with EiceDRIVERTM ICs and CoolSiCTM Schottky diode 650 V G5 using digital control. WBG semiconductors High power density 800 W 130 kHz platinum server design with XMC1300 20-300 V MOSFETs Applications XMCTM power conversion kits MCU XMC4400 (LQFP64) Vout_nom 54.3 VDC SR MOSFET OptiMOSTM BSC093N15NS5 Iout_max 55 A Drivers 1EDI60N12AF 2EDN7524R Pout 3000 W LLC Half-bridge MOSFET CoolMOSTM P6 IPW60R041P6 frange 90-200 kHz Auxiliary PSU ICE2QR2280Z Peak efficiency >98.4% RGB LED lighting shield with XMC1202 for Arduino The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and is able to drive up to three LED channels with constant current. The shield itself is powered by a programmable XMCTM 32-bit ARM(R) MCU with embedded brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control. Features Compatible with Arduino Uno R3 and XMC1100 boot kit from Infineon Easily configurable for various light engines and any input voltage (within operating conditions) Wide DC input voltage range Simple I2C interface Operating conditions Nominal: 12-48 V input voltage (max. 6-60V) Average LED current up to 700 mA (max. peak current 1 A) The Infineon shields mentioned above are hardware compatible with Arduino and Infineon's XMCTM boot and relax kits. www.infineon.com/shields-for-arduino 259 www.infineon.com/3kw-llc-eval-p7-to247 500-950 V MOSFETs WBG semiconductors Discrete IGBTs 350-410VDC Power ICs Infineon components Vin Gate driver ICs Specification Motor control ICs 3 kW dual-phase LLC converter using XMC4400 Customer benefits Full digital control by XMC4400 on the secondary side Efficiency peak 98.5% and more than 97.2% in the entire load range Easy monitoring and parameter setting via a graphic user interface Microcontrollers Key features Full digital control by XMC4400 on the secondary side Digital current sharing with phase shedding Accurate algorithm able to prevent hard commutation and capacitive load mode in LLC operation XENSIVTM sensors The 3 kW dual-phase LLC demonstration board is an example of a high efficiency isolated DC-DC converter using the state-of-the-art Infineon components, both power devices and controller/driver ICs. The use of an advanced digital control using the XMC4400 microcontroller, together with the latest generation of CoolMOSTM and OptiMOSTM devices, allows achieving a very flat efficiency curve in the entire load range. The demonstration board is targeting the high voltage DC-DC stage of high-end telecom rectifiers. Packages 3 kW dual-phase LLC converter using XMC4400 20-300 V MOSFETs Applications XMCTM power conversion kits XMC4800 automation board V2 - explore XMC4800 microcontroller based on ARM(R) Cortex(R)-M4 The XMC4800 automation board V2 uses Infineon's industry leading XMCTM ARM(R) Cortex(R)-M4 microcontroller in combination with Infineon's supply, interface, communication and safety products. The XMC4800 automation board V2 is designed to evaluate the capabilities of the XMC4800 microcontroller especially in EtherCAT(R) slave applications and can be used with a wide range of development tools including Infineon's free-of-charge Eclipse based IDE, DAVETM. Discrete IGBTs XMC4800-E196 MCU based on ARM(R) Cortex(R)-M4 at 144 MHz EtherCAT(R) slave controller, 2 MB flash and 352 kB RAM OPTIGATM Trust E embedded security solution (CC EAL6+) Real time clock crystal SPI FRAM (64 kB non-volatile memory) EtherCAT(R) slave node (2 EtherCAT(R) PHY and RJ45 Jacks) 24 V ISOFACETM 8-channel inputs and 8-channel outputs CAN transceiver CAN transceiver Type Description Gate driver ICs OPN KITXMC48AUTBASEV2TOBO1 XMC4800E196K2048AAXQMA1 ISO2H823V25XUMA1 ISO1I813TXUMA1 SLS32AIA020A4USON10XTMA2 TLE6250GV33XUMA1 IFX54441LDVXUMA1 www.infineon.com/automationkit 260 Packages XENSIVTM sensors KIT_XMC48_AUT_BASE_V2 The XMC4800 automation board V2 utilizes Infineon's industry leading XMC ARM(R) Cortex(R)-M4 microcontroller in combination with Infineon's supply, interface/communication and safety products. XMC4800-E196K2048 ARM(R) Cortex(R)-M4 microcontroller ISO2H823V2.5 24 V 8-channel isolated output ISO1I813T 24 V 8-channel isolated input SLS 32AIA020A4 USON10 OPTIGATM Trust E - embedded security solution TLE6250GV33 Infineon CAN transceiver IFX54441LDV Infineon voltage regulator Motor control ICs XMC4800 automation board V2 Power ICs Customer benefits Complete automation kit gateway Combined MCU with EtherCAT slave application Isolated interfaces with diagnose Ethernet connectivity with software examples available 24 V supply CAN connectivity Full software DAVETM examples Microcontrollers WBG semiconductors Key features 500-950 V MOSFETs 3 kW dual-phase LLC converter 20-300 V MOSFETs Applications XMCTM power conversion kits Half- and full-bridge support Variable and fixed frequency transmitter types Buck and boost topologies Integrated flash for parameter storage Voltage supply 1.8-5.5 V Space saving VQFN-40 package Customer benefits Supports 15 W charging and existing standards, including fast charging of smartphones Full power 15 W without exotic thermal management Achieves charging rates equivalent to wired charging Supports custom-charging profiles and industry standards on the same hardware Foreign object detection (FOD) with improved accuracy quality-factor monitoring Foreign object detection capability can be extended beyond existing standards to improve detection Supports custom coils, and greater than three coils www.infineon.com/wirelesscharging 261 500-950 V MOSFETs WBG semiconductors Packages XENSIVTM sensors Microcontrollers For a detailed overview of Infineon's wireless charging solutions, check pages 60 to 64. Discrete IGBTs Power ICs Key features Supports inductive and resonant charging methods Power levels up to 60 W Multiple industry standard and custom charging profiles using the same hardware architecture Single- and multi-coil transmitters Gate driver ICs Infineon's XMCTM wireless power controller, based on the ARM(R) Cortex(R)-M0 core, provides a powerful and cost-effective platform for high performance, smart and safe wireless charging applications. The XMCTM wireless power controller helps the next-generation wireless charging systems to meet strict safety, environmental and regulatory requirements, while still enabling industry-leading charging performance and efficiency. This controller works seamlessly with Infineon's power devices in a scalable architecture to provide a complete charging solution for everything from a fast-charge smartphone, to a 20 W robot, or a 60 W drone and beyond. Motor control ICs XMCTM wireless power controller - enabling wireless charging transmitter applications 20-300 V MOSFETs Applications XMCTM power conversion kits Applications XMCTM peripherals Extended documentation and pre-certified software libraries to XMCTM Cortex(R) ARM(R) based controllers are free of charge. For more information, please check: www.hitex.com/classb Documentation Consultancy Safety application note Failure mode report FMEDA tool Power ICs Implementation support by Hitex by Infineon, revised in workshops by TUV Sud WBG semiconductors Supporting the XMC1xxx and XMC4xxx families In collaboration with the consultancy Hitex, Infineon developed the IEC60730 - class B software library for XMCTM industrial microcontrollers for household electrical appliances. This is a dedicated software library for XMCTM MCUs with routines for internal supervisory functions and for self-diagnostics. Discrete IGBTs IEC60730 class B library for XMCTM 500-950 V MOSFETs 20-300 V MOSFETs XMCTM peripherals Embedded security for XMCTM MCUs Gate driver ICs Infineon and its partners provide solutions which support support with data protection, allowing authentication and encryption and securing firmware file updates to prevent cloning and downtimes. Security solutions CodeMeter Embedded by WIBU, XMC4000 exclusive OPTIGATM family by Infineon Hardware-based security solutions OPTIGATM Trust family OPTIGATM TPM family Turnkey and programmable security solutions Standardized certified turnkey solution KMS/CycurKEYS by ESCRYPT, XMC4000 www.infineon.com/xmc 262 Packages XENSIVTM sensors emSecure by SEGGER Motor control ICs Hardware Secure bootloader by Infineon, XMC1000 Microcontrollers Software Applications AURIXTM microcontroller Supporting floating point and fix point with all cores Up to 6.9 MB of internal RAM, up to 16 MB of flash Innovative single supply 5 V or 3.3 V IEC61508 conformance to support safety requirements up to SIL 3 Embedded EEPROM Advanced communication peripherals: CAN FD, LIN, SPI, FlexRay, Ethernet Key benefits High scalability gives the best cost-performance fit High integration leads to significant cost savings High integration leads to reduced complexity Innovative supply concept leads to best-in-class power consumption Power ICs Key features TriCoreTM with DSP functionality Best-in-class real-time performance: up to six TriCoreTM with up to 300 MHz per core WBG semiconductors AURIXTM is Infineon's family of microcontrollers serving the needs of industrial applications in terms of performance and safety. Its innovative multicore architecture, based on up to six independent 32-bit TriCoreTM CPUs at 300 MHz, has been designed to meet the highest safety standards while increasing the performance at the same time. Using the AURIXTM scalable platform, developers will be able to implement applications such as motor control and drives, PLC or any other automation application. Developments using AURIXTM require less effort to achieve the SIL/ IEC61508 standard based on its innovative safety concept and multiple HW safety features. Furthermore, AURIXTM has enhanced communication capabilities to support communication between CAN, LIN, FlexRay and Ethernet buses. Discrete IGBTs 32-bit multicore TriCoreTM - safety joins performance 500-950 V MOSFETs 20-300 V MOSFETs AURIXTM - 32-bit microcontrollers TQFP-80 TQFP-100 LQFP-144 TQFP-144 LQFP-176 LFBGA-292 BGA-416 LFBGA-516 TC297 TC298 TC299 Gate driver ICs AURIXTM family package scalability up to 8 MB max. SRAM 2.75 MB triple-core 7x series up to 4 MB max. SRAM 472 kB triple-core TC275 TC277 TC265 TC267 Motor control ICs 9x series up to 2.5 MB max. SRAM 752 kB dual-core TC264 3x series up to 2 MB max. SRAM 708 kB lockstep-core TC233 TC234 TC222 TC223 TC224 TC212 TC213 TC214 TC237 Microcontrollers 6x series up to 1 MB max. SRAM 96 kB lockstep-core 1x series up to 512 kB max. SRAM 56 kB lockstep-core XENSIVTM sensors 2x series www.infineon.com/aurix 263 Packages Upgrade/downgrade with pin-compatible packages 3/1 263 84/10 DS yes 6 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-516 EVR, STBU, HSM 8000 728 FPU 3/1 263 84/10 DS yes 6 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-516 EVR, STBU, HSM TC298TP 300 8000 728 FPU 3/1 232 60/10 DS yes 6 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LBGA-416 EVR, STBU, HSM TC297TA 300 8000 2728 FPU, FFT, CIF 3/1 169 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC297TX 300 8000 2728 FPU 3/1 263 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC297TP 300 8000 728 FPU 3/1 169 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC277TP 200 4000 472 FPU 3/2 169 60/6 DS no 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD K LFBGA-292 EVR, WUT, HSM TC275TP 200 4000 472 FPU 3/2 112 60/6 DS no 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, WUT, HSM TC267D 200 2500 240 FPU 2/1 169 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, 3xPSI5, HSSL, FlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU TC265D 200 2500 240 FPU 2/1 112 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, STBU TC264DA 200 2500 752 FPU, FFT, CIF 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU TC264D 200 2500 240 FPU 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU TC237LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K LFBGA-292 EVR, WUT, HSM TC234LA 200 2000 704 FPU, FFT 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM TC234LX 200 2000 704 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM TC234LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-144 EVR, WUT, HSM TC233LP 200 2000 192 FPU 1/1 78 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-100 EVR, WUT, HSM TC224L 133 1000 96 FPU 1/1 120 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT TC223L 133 1000 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT TC222L 133 1000 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT TC214L 133 500 96 FPU 1/1 120 14 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT TC213L 133 500 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT TC212L 133 500 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT CIF = camera and external ADC Interface, FFT = fast fourier transform accelerator, FPU = floating point unit, PCP = peripheral control processor ASC = asynchronous serial channel, ASCLIN = asyn/synchronous local interconnect network, HSSL= high-speed serial link, I2C = inter-integrated circuit, LIN = local interconnect network, MLI = micro link interface, MSC = micro second channel, PSI5 = peripheral sensor interface 5, QSPI = queued serial peripheral interface, SENT = single edge nibble transmission, SSC = synchronous serial channel, CAN FD ISO11898-1:2015 3) Ambient temperature range: A = -40C ... 140C, B = 0C ... 70C, F = -40C ... 85C, H = -40C ... 110C, K = -40C ... 125C, L = -40C ... 150C, X = -40C ... 105C 4) EVR = embedded voltage regulator, HSM = hardware security module, STBU = stand-by control unit, WUT = wake-up timer 1) WBG semiconductors 8000 2728 FPU 300 Discrete IGBTs 300 TC299TP Power ICs TC299TX Gate driver ICs Additional features/remarks 4) Packages Temperature ranges 3) Communication interfaces 2) CAN nodes External bus interface Number of ADC channels Timed I/O Cores/lockstep Co-processor 1) SRAM (incl. cache) [kB] Program memory [kB] Max. clock frequency [MHz] Product type AURIXTM TC2xx portfolio 500-950 V MOSFETs 20-300 V MOSFETs Applications AURIXTM microcontroller www.infineon.com/aurix 264 Packages XENSIVTM sensors Microcontrollers Motor control ICs 2) Applications AURIXTM microcontroller 20-300 V MOSFETs AURIXTM 2nd generation - TC3xx AURIXTM TC3xx architecture evolution from TC2xx to TC3xx LMU SPU RIF Large MEM DAM WBG semiconductors CPU5 CPU4 SPU RIF Pflash 0...5 Dflash Safety LBIST MBIST upgrade Mini MCDS Discrete IGBTs FPU PSPR, PCACHE DSPR, DCACHE CPU3 CPU1 TC 1.6P CPU0 CPU2 Checker core Checker core Checker core Checker core 500-950 V MOSFETs IO pads all 5 V/3.3 V Performance New TriCoreTM 162 generation New instructions Up to 6 CPUs at 300 MHz New direct flash access path HSM: full EVITA compliance Delta-sigma Enhanced concept ADAS New HW accelerator concept SPU (signal processing unit) Memories Larger SRAM SRAM/flash ratio increased Enhanced MPU Stand-by control unit Low-power modes Ethernet 1 Gbit/s ETH QoS services Remote DMA eMMC/SDIO External NAND flash IF SENT PSI5S PSI5 I2C QSPI ASC LIN CAN FD GPT ADC Improvement of existing ADC Reduction of capacitive load New accelerators ECC256/SHA256 Available on all devices www.infineon.com/aurix 265 CCU6 GTM E0S A0C FCOMP Secondary ADC Primary ADC EVADC Power ICs System peripheral bus Gate driver ICs HSSL HSCT Motor control ICs SFI bridge Microcontrollers DMA XENSIVTM sensors eMMC/SDIO ERAY ETH MAC Packages StdBy ctrl STM HSM FCE MSC HSDPM SCU IOM Port System resource interconnect 20-300 V MOSFETs Applications AURIXTM microcontroller AURIXTM TC3xx package scalability TC387Qx 300 MHz 300 MHz 500-950 V MOSFETs 8x series up to 12 MB TC387Q TC389Q 300 MHz 300 MHz 7x A series TC377TX up to 6 MB 300 MHz 300 MHz 6x series TC364D TC365D TC366D TC367D up to 4 MB 300 MHz 300 MHz 300 MHz 300 MHz 5x A series TC356TA TC357TA up to 4 MB 300 MHz 300 MHz 3x A series TC336DA TC337DA up to 2 MB 200 MHz 200 MHz 3x series TC332L TC333L TC334L TC336L TC337L up to 2 MB 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 2x series TC322L TC323L TC324L TC327L up to 1 MB 160 MHz 160 MHz 160 MHz 160 MHz TQFP-80 TQFP-100 T/LQFP-144 D - Dual core T - Triple core Package L - Single lockstep core LQFP-176 Q - Quadruple core LFBGA-196 LFBGA-292 X - Sextuple core Advanced package technologies deliver the best price/performance ratio Customers can choose between different devices in the same pin-compatible package MCU scalability Safety/security concept Performance and flash Pin compatibility Binary-compatible cores ISO 26262 compliance Hardware security support IEC61508 compliant Discrete IGBTs TC377T 300 MHz Power ICs TC375T up to 6 MB Gate driver ICs 7x series WBG semiconductors 8x series up to 10 MB Flash 300 MHz TC399Xx LFBGA-516 Motor control ICs up to 16 MB Microcontrollers TC397Xx TC397Qx 9x series On-chip SC DC-DC high-efficiency power supply Integrated standby controller www.infineon.com/aurix 266 Ethernet: up to 2x1 GB CAN FD: up to 12 channels LIN: up to 24 channels eMMC IF Packages Connectivity Power consumption XENSIVTM sensors AURIXTM TC3xx 300 16000 2816 no 12 1 EBU, eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25xSENT, 4xPSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-516 5 V/3.3 V EVR, 8-bit SCR TC397XX 6/4 300 16000 6912 no 12 1 eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25xSENT, 4xPSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC397XP 6/4 300 16000 2816 no 12 1 eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25xSENT, 4xPSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC397XA 6/4 300 16000 6912 2x SPU/ 8x 400Mbit/s LVDS 12 1 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25xSENT, 4xPSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC389QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN, 25xSENT, 4xPSI5, 2x I2C, 3x MSC EVITA full K, L LFBGA-516 5 V/3.3 V EVR, 8-bit SCR TC387QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN, 25xSENT, 4xPSI5, 2x I2C, 3x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC377TX 3/3 300 6000 4208 no 12 2 eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN, 15xSENT, 2xPSI5, 1x I2C, 2x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC377TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN, 15xSENT, 2xPSI5, 1x I2C, 2x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC375TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN, 15xSENT, 2xPSI5, 1x I2C, 2x MSC EVITA full K, L LQFP-176 5 V/3.3 V EVR, 8-bit SCR TC367DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10xSENT, 2xPSI5, 1x I2C, 1x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC366DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10xSENT, 2xPSI5, 1x I2C, 1x MSC EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC365DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10xSENT, 2xPSI5, 1x I2C, 1x MSC EVITA full K, L LQFP-176 5 V/3.3 V EVR, 8-bit SCR TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2xPSI5, 1x I2C, 1x MSC EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10xSENT, 2xPSI5, 1x I2C, 1x MSC EVITA full K, L LQFP-144 5 V/3.3 V EVR, 8-bit SCR TC357TA 3/2 300 4000 3664 2x SPU/ 8x 400Mbit/s LVDS 8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC356TA 3/2 300 4000 3664 2x SPU/ 8x 400Mbit/s LVDS 8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC337DA 2/1 200 2000 1568 1x SPU/ 4x 400Mbit/s LVDS 8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC336DA 2/1 200 2000 1568 1x SPU/ 4x 400Mbit/s LVDS 8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC337LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC336LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC334LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC333LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L TQFP-100 5 V/3.3 V EVR, 8-bit SCR TC332LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6xSENT EVITA full K, L TQFP-80 5 V/3.3 V EVR, 8-bit SCR TC327LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC324LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC323LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-100 5 V/3.3 V EVR, 8-bit SCR TC322LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-80 5 V/3.3 V EVR, 8-bit SCR 1) SPU - Signal processing unit 2) HSSL - High-speed serial link 3) 8-bit SCR - Standby controller for low power modes 4) EVR - Embedded voltage regulator www.infineon.com/aurix 267 WBG semiconductors 6/4 Discrete IGBTs TC399XP Power ICs 5 V/3.3 V EVR, 8-bit SCR Gate driver ICs LFBGA-516 Motor control ICs K, L Microcontrollers EVITA full XENSIVTM sensors 6x SPI, 2x FlexRay, 12x LIN, 25xSENT, 4xPSI5, 2x I2C, 4xMSC Additional features/ remarks 3) EBU, eMMC, 2x HSSL Packages 1 Temperature ranges 12 HSM no AURIXTM TC3xx family Packages Communication interfaces 6912 External bus interface 2) Ethernet 100/1000Mbit 16000 SRAM (incl. cache) [kB] 300 Program memory [kB] 6/4 Max clock frequency [MHz] TC399XX Product type CAN/CAN FD nodes Radar accelerator/ radar interface 1) Cores/lockstep TriCoreTM microcontroller portfolio 500-950 V MOSFETs 20-300 V MOSFETs Applications AURIXTM microcontroller TriBoards Discrete IGBTs Infineon TriCoreTM family starter kits are powerful evaluation systems that enable evaluation and development well before the target hardware is available. They offer a solid platform for both hardware and software engineers to evaluate and prototype designs that are closely aligned with their final applications. 500-950 V MOSFETs Infineon starter kits - 32-bit microcontrollers WBG semiconductors AURIXTM starter and application kits 20-300 V MOSFETs Applications AURIXTM microcontroller www.infineon.com/aurix-kits 268 Gate driver ICs Motor control ICs Microcontrollers The system application kits provide a quick jump-start to typical microcontroller applications, such as motor control, radar etc. These reference design kits enable faster design-in support for end applications by providing a reference board, application software, tooling and documentation. XENSIVTM sensors System application kits Packages To simplify the development of your own application, the kit comes with a variety of onboard components, including a highly integrated software development environment that gives you everything you need to compile, debug, and flash your AURIXTM multicore application, such as radar, Arduino, gateway and safety. Power ICs Application kits 20-300 V MOSFETs Applications AURIXTM microcontroller ACT- AURIXTM configuration tool ACT is a powerful tool that helps engineers to jump-start the programming of Infineon microcontrollers. 500-950 V MOSFETs GUI Key feature For further information on TriCoreTM tools, visit www.infineon.com/aurix-tools Pinning data Driver configuration data OS configuration data Generation of configuration files Driver files + OS Various configuration .c and .h files Selected drivers source files WBG semiconductors Altium TASKING VX TriCoreTM lite version including built-in - AURIXTM pin mapping incl. interactive package view - AURIXTM iLLD (low-level driver) - AURIXTM OSEK Discrete IGBTs Key features Eclipse-based IDE Project wizard to easily define the project properties for device and board support High-performance GNU C compiler Integrated source-level debugger On-chip flash programming support Packages XENSIVTM sensors For further information on TriCoreTM tools, visit www.infineon.com/aurix-tools Motor control ICs This free-of-charge entry tool chain provides all the features required to develop and test software for TriCoreTM and AURIXTM. The tool can be used with all available TriCoreTM and AURIXTM starter kits and application boards. Microcontrollers Free TriCoreTM entry tool chain Gate driver ICs Power ICs OS source files 269 Applications AURIXTM microcontroller Preferred Design Houses (PDH) and software resellers Optimized open market customer support set up for systems using AURIXTM and XMCTM, including software and other Infineon's products, such as power products, sensor products and modules. Our partners are trained to use AURIXTM and XMCTM. Driving design at customer Basic training for design teams at customer 24 h response time to the customer level customer support covering Infineon products/solutions Technical interface and support to the customer st Project management and project-specific Premium (Consultancy mode) To be agreed between customers and PDH Software testing application support Specification of general software architecture, defining required layers, control and data flow structure etc. Specification and implementation of custom device drivers Optimization of software components with regard to speed/code size Support for project-specific functional safety engineering Project-specific support for security solution Safety support Discrete IGBTs Classic (Free of charge) WBG semiconductors 1 500-950 V MOSFETs 20-300 V MOSFETs AURIXTM and XMCTM PDH partners Security support Multicore support Motor control Lighting PFC/power conversion AURIXTM general support HW AURIXTM general support SW Safety support IEC61508 Safety support ISO26262 Security support/SHE+ XMCTM general support HW XMCTM general support SW Class B certification Capacitive sensing with XMCTM Secure boot for XMCTM * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 24 GHz radar 77 GHz radar Americas * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Gate driver ICs Autosar Motor control ICs EMEA Support capabilities Power ICs Optimized regional and application-specific presence China Lighting PFC/power conversion AURIXTM general support HW AURIXTM general support SW Safety support IEC61508 Safety support ISO26262 Security support/SHE+ XMCTM general support HW XMCTM general support SW * * * * * * * * * * * Class B certification Capacitive sensing with XMCTM Secure boot for XMCTM * * * * * * * * * * * * * * * * 24 GHz radar 77 GHz radar www.infineon.com/aurix 270 * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Basic Essential principles and elementary know-how to support a customer; provision of basic training for design teams Advanced High-level project-specific application support/consulting Expert XENSIVTM sensors Motor control Extensive knowledge and ability to fully support development Packages Autosar Microcontrollers Support capabilities Videos www.infineon.com/xmc-mediacenter Ecosystem and tools: www.infineon.com/xmc-ecosystem XMC SC Wireless power controller: www.infineon.com/xmcscwirelesspowercontrollers DAVETM IDE: www.infineon.com/dave Boards and kits: www.infineon.com/xmc-dev www.infineon.com/connectivitykit www.infineon.com/ethercat Motor control ICs XMCTM MCUs ecosystem and enablement - kits, board, tools and software Microcontrollers Further information, datasheets and documents www.infineon.com/xmc www.infineon.com/xmc1000 www.infineon.com/xmc4000 www.infineon.com/aurix www.infineon.com/makers XENSIVTM sensors One platform, countless solutions Packages Infineon support for industrial microcontrollers Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Microcontroller support Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications XENSIVTM 272 www.infineon.com/sensors 273 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Packages XENSIVTM sensors With a proven track record in IoT innovation, we continue to seamlessly and securely connect people and machines. Many IoT trends, such as smart devices and wearables, electromobility and connected cars, smart factories and homes, and energy intelligence are being driven by technologies that develop with XENSIVTM sensors families as one of their key elements. Today, we are already inspiring the next generation of smart environments, capable of understanding and responding to human communication. Infineon's semiconductors are at the very heart of machine-to-machine (M2M), human-machine interface (HMI), mobile and wireless infrastructure technologies. As the technological boundary between humans and machines gradually disappears, these devices need even more advanced intelligence, enriched with voice assistance capabilities and the latest sensor fusion innovations, not to mention robust security technologies to protect personal data. Infineon's sensors and microphones are already delivering this intelligent functionality and inspiring the next step in mobile connectivity. Gate driver ICs From the world leader in sensing technology, XENSIVTM sensors simplify lives by enabling "things" to "see", "hear", "feel" and intuitively "understand" their environment. As a result of proven quality and outstanding reliability, customers can rely on XENSIVTM for system stability, durability and integrity. Providing high accuracy and best-in-class measurement performance, XENSIVTM sensors add great value to customer applications. More than 40 years' experience in sensing solutions and a deep-rooted system understanding result in the broadest portfolio of ready-to-use sensor solutions on the market. Ecosystem partners and our customers partner with us for leading technologies, perfect-fit solutions and continuous innovation. Motor control ICs Infineon XENSIVTM sensors are exceptionally precise thanks to industry-leading technologies. They are the perfect fit for various customer applications in automotive, industrial and consumer markets. Microcontrollers Infineon XENSIVTM - sensing the world 20-300 V MOSFETs Applications XENSIVTM The popularity of voice user interfaces and the usage of audio recording to share information and experiences are increasing dramatically. However, the performance of microphones often limits the potential of today's cutting edge devices. Not anymore! Infineon's XENSIVTM MEMS microphones introduce a new performance class for digital MEMS microphones that overcome existing audio chain limitations. IM69D130 is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions and a high acoustic overload point are required. Typical applications High quality audio capturing: e.g. cameras, camcorders, conference systems Voice user interface: e.g. smart speaker, home automation and IoT devices Active noise cancellation: headphones and earphones Audio pattern detection: predictive maintenance, security or safety applications www.infineon.com/microphones 274 Gate driver ICs Motor control ICs Benefits High fidelity and far field audio recording Matched, noise and distortion free audio signals for advanced audio processing Ultralow group delay for latency-critical applications No analog components required Microcontrollers Features 69 dB(A) signal-to-noise ratio (SNR) Below 1 percent distortions at 128 dBSPL (130 dBSPL AOP) Digital (PDM) interface with 6 s group delay at 1 kHz Tight sensitivity (-36 1 dB) and phase ( 2 deg) tolerances 28 Hz low frequency roll-off 4.0 x 3.0 x 1.2 mm package XENSIVTM sensors Hear nothing but your favorite beats! With XENSIVTM MEMS microphones, you can create headsets offering users a benchmark noise cancellation experience. Packages Talk to tomorrow and be heard! With XENSIVTM MEMS microphones, you can define the benchmark in speech recognition for a new user experience. Power ICs Discrete IGBTs Don't miss a single thing! With XENSIVTM MEMS microphones, you can create a new user experience benchmark in audio recording. 500-950 V MOSFETs Time to debottleneck your audio chain WBG semiconductors XENSIVTM MEMS microphone 20-300 V MOSFETs Applications XENSIVTM MEMS microphone Ultralow distorsion (<1% THD) IM69D130: 128dBSPL IM69D120: 118dBSPL Maximum noise rejection 500-950 V MOSFETs Infineon's dual backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of 105 dB. The microphone noise floor is at 25 dB[A] (69 dB[A] SNR) and distortion does not exceed 1 percent even at sound pressure levels of 128 dB SPL (AOP 130 dB SPL). The flat frequency response (28 Hz low-frequency roll-off) and tight manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone (array) applications. 20-300 V MOSFETs Applications XENSIVTM MEMS microphone AIN(-) Class leading dynamic range IM69D130: 105dB IM69D120: 95dB Discrete IGBTs Phase matched microphones +/- 2deg @1kHz WBG semiconductors AIN(+) Ultra precise corner frequency < +/- 7Hz Product portfolio OPN Package Current consumption Sensitivity Signal to noise Supply voltage IM69D130 IM69D130V01XTSA1 LLGA-5-1 980 A -36 dBFS 69 dB 1.62-3.6 V IM69D120 IM69D120V01XTSA1 LLGA-5-1 980 A -26 dBFS 69 dB 1.62-3.6 V Power ICs Product Devices with voice user interface Audio Digital voice assistance and robots Smart home appliances + Highest beam-forming precision + Best speech recognition + Extended voice pickup distance + Best audio quality Conference Security Headsets Industry 4.0 + Ultraclear voice pickup + Sensitive to softest audio signals + Best noise attenuation + Smallest pattern deviation detection 275 Packages www.infineon.com/microphones XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs TV, laptop and set top box DPS310 Barometric pressure sensor with very low power consumption, recommended for applications where power consumption is critical and highest precision in pressure metering is required. DPS368* DPS368 offers the best-in-class resolution (2 cm), a very fast read-out speed and a low current consumption. The sensor can be used in harsh environment, as it is robust against water (IPx8 - 50 m under water for 1 hour), dust and humidity. The small package size saves up to 80 percent of the space and makes the DPS368 ideal for mobile applications and wearable devices. www.infineon.com/pressuresensor * Environmentally protected pressure sensor, available Q2 2019 276 DPS422 DPS368* LGA 8-pin: 2.0 x 2.5 x 0.73 mm LGA 8-pin: 2.0 x 2.5 x 1.1 mm 300 ... 1200 hPa -40 ... 85C 0.005 hPa (or 0.05 m) 0.002 hPa (or 0.02 m) 0.06 hPa (or 0.5 m) 1 hPa (or 8 m) 0.5C < 0.4C 0.5C 0.5 Pa/K 3.6 ms (low precision); 27.6 ms (standard mode) 1.7 A pressure measurement, 1.5 A temp. 1.7 A pressure measurement, 2.0 A temp. 1.7 A pressure measurement, 1.5 A temp. measurement, standby 0.5 A measurement, standby < 1 A measurement, standby 0.5 A VDDIO: 1.2 - 3.6 V; VDD: 1.7 - 3.6 V Command (manual), background (automatic), standby I2C and SPI, both with optional interrupt Microcontrollers DPS310 LGA 8-pin: 2.0 x 2.5 x 1.0 mm XENSIVTM sensors Package size Operating pressure range Operating temperature range Pressure level precision Relative accuracy Absolute accuracy Temperature accuracy Pressure temperature sensitivity Measurement time Average current consumption @ 1 Hz sampling rate Supply voltage Operating modes Interface Packages Key product features Motor control ICs Typical applications Drones: altitude detection and height stability Health and fitness: accurate elevation gain and step counting (e.g. for smart watches) Outdoor navigation: GPS start-up time/accuracy improvement; dead reckoning (e.g. in tunnels) Indoor navigation: floor detection e.g. in shopping malls and parking garages Smart home: micro weather forecasting; room temperature control; intruder detection Air flow control: Smart filter replacement alarm (e.g. in home appliances); predictive maintenance Health care: fall detection; respiratory devices; smart inhalers Gate driver ICs Power ICs DPS422 Monolithic chip solution that has an ultrasmall critical area and a very thin package (0.73 mm typ.). Beneath high precision pressure metering, DPS422 offers also highly accurate absolute temperature sensing (0.4C), which is required in applications like weather stations, thermostats, etc. It can be used in applications such as weather stations / smart thermostats and offers additional features by pressure sensing (e.g. intruder detection, weather forecast). 500-950 V MOSFETs Infineon's digital barometric pressure sensor family is the best choice for mobile and wearable devices due to its small form factor, high precision and low power consumption. Pressure sensing is based on capacitive technology which guarantees ultrahigh precision (2/5 cm) and relative accuracy (0.6 hPa) over a wide temperature range. The sensor's internal signal processor converts the output from the pressure and temperature sensor elements to 24-bit results. Each pressure sensor has been calibrated individually and contains calibration coefficients. The coefficients are used in the application to convert the measurement results to true pressure and temperature values. All sensors have a FIFO that can store the latest 32 measurements. Since the host processor can remain in a sleep mode for a longer period between readouts, a FIFO can reduce the system power consumption. Sensor measurements and calibration coefficients are available via the serial I2C/SPI interface. WBG semiconductors For mobile and wearable devices Discrete IGBTs XENSIVTM digital barometric pressure sensor 20-300 V MOSFETs Applications XENSIVTM pressure sensors 20-300 V MOSFETs Applications XENSIVTM pressure sensors Functional block diagram Digital core Calibration coefficients Capacitive pressure sensor Digital interface I2C/SPI VDDIO Memory interface Voltage regulators FIFO VDD 500-950 V MOSFETs Digital signal processing ADC MUX WBG semiconductors Temperature sensor Processor VDDIO SCK INT SDI VDDIO GND SCK Interrupt (optional) N.C. 1.2 ... 3.6 V C Pressure sensor SDO GND CSB VDD 1.7 ... 3.6 V C Pin configuration (top view) VDD 8 1 GND GND 7 2 VDDIO 6 3 SDI SDO 5 4 SCK CSB Vent hole Name Function GND Ground 2 CSB Chip select 3 SDI Serial data in/out 4 SCK Serial clock 5 SDO Serial data out 6 VDDIO Digital interface supply 7 GND Ground 8 VDD Analog supply DPS368 package drawing DPS422 package drawing www.infineon.com/pressuresensor 277 Packages XENSIVTM sensors DPS310 package drawing Pin 1 Power ICs I C serial interface Gate driver ICs VDDIO R Motor control ICs SDA 2 Microcontrollers R Discrete IGBTs Application circuit example (in I2C configuration) Features Manifold air pressure measurement - MAP and turbo MAP Excellent accuracy of up to 1.0 kPa over a large temperature range Ratiometric analog voltage output proportional to the applied pressure Output signal fully compensated over pressure and temperature Pressure range from 10 to 400 kPa Temperature range from -40 to +140C Output clamping (optional) Complete product family available with multiple transfer function Reverse polarity protection Green SMD package KP23x Analog barometric air pressure (BAP) sensor IC family Pressure range from 40 to 115 kPa Temperature range from -40 to +125C Serial service interface Open bond detection (OBD) for supply and GND Inverse polarity protection Green SMD package www.infineon.com/pressure 278 500-950 V MOSFETs WBG semiconductors Packages XENSIVTM sensors Microcontrollers Features Absolute air pressure measurement Excellent accuracy of 1.0 kPa over a large temperature range Ratiometric analog voltage output proportional to the applied pressure Output signal fully compensated across pressure and temperature range Discrete IGBTs KP21x/KP22x Analog manifold air pressure sensor IC family (MAP + turbo MAP) Power ICs The analog and digital interfaces of Infineon's pressure sensors provide customers with a high degree of design flexibility and enable manufacturers to meet evolving market demands. Gate driver ICs Infineon's pressure sensors are ideal for a wide range of applications in the automotive and industrial sectors. Typical applications in automotive include side airbag, engine control and seat comfort with high quality, highly accurate products adhering to ISO26262 standard. Infineon offers the ideal portfolio for these systems. Motor control ICs Absolute pressure sensors (MAP and BAP) 20-300 V MOSFETs Applications XENSIVTM pressure sensors Applications XENSIVTM pressure sensors 20-300 V MOSFETs KP275 Media robust MAP sensor with digital interface WBG semiconductors 500-950 V MOSFETs Features Media robustness for current automotive requirements Digital single edge nibble transmission (SENT) interface Excellent accuracy of 0.77 percent FFS Green SMD package Temperature range -40 to +170C Integrated NTC temperature sensor functionality Block diagram Normal mode/ diagnosis mode NTC conditioning Temperature compensation VDD Voltage regulator Analog ADC CLK Digital core (iSM) SPI interface SDI SDO VDDA E2PROM interface VDDD SENTOUT Buffer amplifier (interface driver) ROM Power ICs MUX NTCIN Digital signal processing Discrete IGBTs NCS Pressure cells E2PROM Digital Reset Gate driver ICs GND Pressure range [kPa] Max. accuracy [kPa] KP21x 10 ... 150 1.0 Max. operating temperature [C] 140 Automotive Industrial KP22x 10 ... 400 2.5 140 KP23x 15 ... 115 1.0 125 KP236N6165 60 ... 165 1.0 125 KP253 60 ... 165 1.0 125 KP254 40 ... 115 1.5 125 10 ... 125 1.4 140 60 ... 165 1.0 125 KP275 10 ... 400 3.0 170 www.infineon.com/pressure 279 Packages XENSIVTM sensors KP255 KP256 Microcontrollers Product Motor control ICs Integrated pressure sensor ICs for manifold and barometric air pressure In addition to the BGT24M/L family of MMIC chips, Infineon provides a continuously expanding range of evaluation and demonstration boards to support the testing and development of radar in multiple applications. All boards are provided with base level software to support the ease of use and faster time-to-market integration. Utilizing our strong network of partners, the radar portfolio is extended to include a range of easy-to-integrate modules. Each of them contains Infineon's 24 GHz MMIC. Indoor and outdoor lighting systems Gesture control on TV Intrusion detection 500-950 V MOSFETs Streetlighting Air flight control Collision avoidance in multicopters and robotics XENSIVTM sensors Microcontrollers Motor control ICs People tracking and occupancy detection in IoT/smart home WBG semiconductors Key benefits Direction, proximity and speed detection Hidden mounting capability Maintains operation through harsh weather conditions Motion tracking Sensitive enough to capture breathing and heartbeat Target positioning Adaptable to different application requirements Gate driver ICs Applications Building and smart home (IoT) Indoor/outdoor lighting Security UAV/multicopters Robotics Smart street lighting Discrete IGBTs Infineon offers a wide portfolio of mmWave radar sensors to address different customer requirements. The BGT24M/L family is the largest and highest integrated 24 GHz radar transceiver family currently on the market, saving ~30 percent board space compared to discrete lineups. Infineon provides a total of four 24 GHz industrial radar chips, providing a range of different transmitter and receiver channel configurations, supporting different application requirements. Power ICs XENSIVTM 24 GHz radar sensor ICs 20-300 V MOSFETs Applications 24GHz radar sensor ICs proximity sensor to activate appliances www.infineon.com/24GHz 280 BSD (blind spot detection) in the car Intruder alarm/presence detection in surveillance Packages Collision avoidance BGT24MTR11 1Tx + 1Rx BGT24MR2 2Rx BGT24MTR12 1Tx + 2Rx BGT24LTR11 1Tx + 1Rx Features Measures not just motion, but also speed, direction, and distance Small form factor Resistance to moisture, dirt and temperature Increased area coverage Discrete design Energy savings Privacy protection Adaptable to different application requirements Highly integrated chips eliminating costly external components The BGT24LTR11N16 key features 24 GHz transceiver MMIC Fully integrated low phase noise VCO Built in temperature compensation circuit for VCO stabilization, no PLL needed Low power consumption Fully ESD protected device Single ended RF and IF terminals 200 GHz bipolar SiGe:C technology B7HF200 Single supply voltage 3.3 V Divider output for PLL operation Smallest 24 GHz transceiver in the market Polyphase filter Balun MPA Balun VEE Tx VEE Balun 90 0 Tx_ON f-div VCC _DIV DIV www.infineon.com/24GHz 281 LNA PTAT VTUNE R_TUNE Balun IFI IFQ Balun VCC VEE RFIN VEE 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Configuration mm Power ICs Product mm Gate driver ICs 2.4 5.5 2.4 Long range distance detection of moving objects up to 30 m Wide range speed detection up to 100 km/h Lower BOM costs V_PTAT VCC _PTAT Packages mm Motor control ICs Benefits Balun 24 GHz ISM band operation for motion, speed, direction movement and distance measurements 4 MMIC chips available Highly integrated 4.5 Infineon MMIC mm Features Microcontrollers Infineon's range of 24 GHz industrial radar chips provides four configurations of transmit and receiver channels, ensuring that there is a chip to support your specific application. From basic applications such as motion detection in security systems, which only requires one transmit and one receive channel, to more complex applications like 3D positioning, which requires two or more receive channels, our range of radar chips supports all of your requirements. XENSIVTM sensors Infineon BGT24M/L family of MMIC chips 20-300 V MOSFETs Applications 24GHz radar sensor ICs Features Infineon development kit Three system boards available All include 24 GHz radar and XMCTM microcontroller Kit contains user manual, GUI, MATLAB compiler and Gerber files Requires software + Software Benefits Capability to detect motion, speed and direction of movement (approaching or retreating) distance and angle of arrival based on hardware Firmware/software available for each radar mode 500-950 V MOSFETs Infineon's range of 24 GHz evaluation and demo boards continues to expand to support the needs of our customers and the increasing number of innovative ways radar is being incorporated into new applications. WBG semiconductors 24 GHz evaluation and demonstration boards 20-300 V MOSFETs Applications 24GHz radar sensor Sense2GOL (BGT24LTR11 + XMC1300) Distance2Go (BGT24MTR11 + XMC4200) Position2Go (BGT24MTR12 + XMC4700) Capability to detect motion, speed and Capability to detect distance of multiple Capability to detect and track position of debugger break-off board for reprogramming) Kit contents User manual Demonstration board SW GUI to operate kit Schematic and bill-of-materials of module Kit contents User's manual Demonstration board Corner reflector SW GUI to operate kit FMCW FW and SW Doppler FW and SW Schematic and bill-of-materials of module 1) 1) www.infineon.com/24GHz 1) Usage of the FMCW and/or Doppler FW and SW requires agreeing to Infineon's user's agreement and licensing terms. 282 Power ICs Gate driver ICs direction of movement (approaching or retreating) Operates in harsh environments and detects through non-metallic materials BGT24MTR12 - 24 GHz highly integrated RF MMIC XMC4700 ARM(R) Cortex(R)-M4 -32-bit industrial microcontroller Debug over Cortex 10 pin debug connector Integrated multiple element patch antennas Main applications Drone/robots: obstacle avoidance Security People tracking (IoT, smart home) Vital sensing Board dimensions Board 50 mm x 45 mm Kit contents User's manual Demonstration board Corner reflector SW GUI to operate kit FMCW FW and SW Doppler FW and SW Schematic and bill-of-materials of module Motor control ICs Board dimensions Board 36 mm x 45 mm targets Capability to detect motion, speed and Microcontrollers Board dimensions 25 mm x 25 mm (pictured with the Segger Main applications Drone: soft landing/obstacle avoidance Smart toilets Tank level sensing Intelligent switches multiple targets Capability to detect distance of multiple XENSIVTM sensors Main applications Security Lighting control Automatic door opener Vital sensing targets Capability to detect motion, speed and direction of movement (approaching or retreating) Operates in harsh environments and detects through non-metallic materials BGT24MTR11 - 24 GHz highly integrated RF MMIC XMC4200 ARM(R) Cortex(R)-M4 -32-bit industrial microcontroller Debug over Cortex 10 pin debug connector Integrated multiple element patch antennas Packages direction of movement (approaching or retreating) Precise measurement of object detection compared to PIR Operates in harsh environments and detects through non-metallic materials Low power mode for enhanced battery life One of the world's smallest complete radar + MCU development kit BGT24LTR11 - 24 GHz highly integrated RF MMIC XMC1300 ARM(R) Cortex(R)-M0 -32-bit industrial microcontroller Debug over Cortex 10 pin debug connector Integrated multiple element patch antennas Discrete IGBTs Demokit with SW, reference design Benefits Complete module, including radar MMIC, antenna options, MCU signal processing options, and SW options (Doppler, FSK and FMCW versions available) Ease of design Turnkey solution, no need for test and certification Module (RF module; RF module + MCU including SW) By integrating Infineon's 24GHz MMIC chip into the partners easy-to-use and simple-to-integrate modules the complexity and time to market for a range of applications such as home automation, multicopter, robotics and street lighting, are reduced. Lighting Security 500-950 V MOSFETs Partner modules using Infineon chips WBG semiconductors Features Discrete IGBTs Partnering with the leading radar solution providers enables Infineon to connect our customers looking for turnkey solutions and design support for a complete range of applications. Power ICs 24 GHz modules 20-300 V MOSFETs Applications 24GHz radar sensor Radar, used in motion detection applications, increases accuracy when compared to passive infrared (PIR) technology, allowing a more precise measurement of object detection, and providing new capabilities such as the detection of speed and the direction of moving objects. Radar is also superior to camera-based systems by allowing detection of the objects while keeping identities anonymous. Motor control ICs New application or simple PIR replacement? Radar has it covered. Microcontrollers Door automation Gate driver ICs Touch free switches www.infineon.com/24GHz 283 Packages XENSIVTM sensors Visit the link below to view our network of partners who provide modules and design support for all 24GHz industrial applications: www.infineon.com/24GHzpartners Applications XENSIVTM magnetic current sensors 20-300 V MOSFETs High-precision current sensor for industrial applications - based on Hall technology Motor control ICs Gate driver ICs Features Fully calibrated digital output High accuracy over life time due to on-chip temperature and stress compensation Programmable low-pass filter for measuring current (0 to 18 kHz) Fast, configurable overcurrent detector (< 1.8 s typ.) Inherent magnetic stray field suppression Small package size and weight for SMD mounting Applications (AC and DC current measurement) Photovoltaic and general purpose inverters Power supplies (SMPS) Battery chargers Lighting applications Electrical drives Current range [A] Bandwidth [kHz] Resolution [mA/LSB] TLI4970-D050T4 1.6 50 18 12.5 Automotive - Industrial Package TISON-8 TLI4970-D050T5 3.5 50 18 12.5 - TISON-8 TLI4970-D025T4 1.6 25 18 6.25 - TISON-8 TLI4970-D025T5 3.5 25 18 6.25 - TISON-8 XENSIVTM sensors Accuracy1) Packages Product 1) Total error over lifetime and temperature 284 Microcontrollers www.infineon.com/current-sensor WBG semiconductors Power ICs TLI4970 is more accurate than existing open-loop and comparable to closed-loop systems. It also provides additional functions such as fast overcurrent detection and programmable filter, yet it has a significantly smaller footprint and lower power consumption. Infineon's sensor is extremely robust against external magnetic fields thanks to implemented stray field suppression, and is also suitable for fast overcurrent detection at a pre-configurable level. This allows the control unit to switch off independently of the main measurement path and protect power consumers from damage. Discrete IGBTs TLI4970 is a high-precision current sensor for industrial applications, based on our proven Hall technology. The coreless concept significantly reduces footprint compared with existing solutions. Infineon's current sensor is an easy-to-use, fully-digital solution, which does not require external calibration or additional parts such as A/D converters, 0 pAmps or reference voltage. It thus significantly reduces overall implementation effort, as well as PCB space and cost. The differential measurement principle integrated in the TLI4970 sensor suppresses interference caused by external magnetic fields. Accordingly, the sensor achieves an extremely low offset of just 25 mA. With conventional current measurement principles, the measuring accuracy is always governed by the ambient conditions (e.g. the temperature). 500-950 V MOSFETs TLI4970: the miniaturization advantage Applications XENSIVTM magnetic position sensors 20-300 V MOSFETs Hall switches The energy-saving option with excellent accuracy and robustness Product Type Operating point BOP Release point BRP Hysteresis BHY Automotive TLE4961-1M/L TLE4961-2M TLE4961-3M/L TLE4964-1M TLE4964-2M TLE4964-3M TLE4964-5M TLE4968-1M/L TLE4961-5M TLE4961-4M TLE4964-4M TLE4964-6M TLV4964-1M TLV4964-2M TLI4961-1M/L TLV4961-3M Latch Latch Latch Switch Switch Switch Switch Bipolar Latch Latch Switch Switch Switch Switch Latch Latch 2.0 5.0 7.5 18.0 28.0 12.5 7.5 1.0 15.0 10.0 10.0 3.5 18.0 28.0 2.0 7.5 -2.0 -5.0 -7.5 12.5 22.5 9.5 5.0 -1.0 -15.0 -10.0 8.5 2.5 12.5 22.5 -2.0 -7.0 4.0 10.0 15.0 5.5 5.5 3.0 2.5 2.0 30.0 20.0 1.5 1.0 5.5 5.5 4.0 15.0 Industrial - - - Consumer WBG semiconductors Discrete IGBTs Package SOT23/SSO-3-2 SOT23 SOT23/SSO-3-2 SOT23 SOT23 SOT23 SOT23 SOT23/SSO-3-2 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23/SSO-3-2 SOT23 www.infineon.com/Hall-switches 285 Packages XENSIVTM sensors - - - - Gate driver ICs Gear stick (position detection) Seat belt (position detection) BLDC commutation (e.g. wiper seat belt pretentioner, pump, seating) Service robots Power tools White goods Motor control ICs 7 kV ESD protection (HBM) Overtemperature and overcurrent protection Temperature compensation Smallest SOT23 package Dedicated products for industrial applications (TLI496x) AEC-Q100 qualified Electrical drives Applications Window lifter (index counting) Power closing (index counting) Microcontrollers Features Current consumption of just 1.6 mA 3 to 32 V supply voltage range (over voltage up to 42 V) Power ICs The TLE/TLI/TLV496x-xM/L family of Hall switches saves energy and enables designers to create precise, compact systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut energy consumption by up to 50 percent compared with similar competitor products. Thanks to its small magnetic hysteresis, the family paves the way for precise switching points in systems. The integrated temperature profile compensates magnetic drifts and enables stable performance over temperature and lifetime. TLE/TLI/TLV496x-xM products come in the smallest SOT23 package, thus reducing height by 10 percent compared with predecessor products. The sensors also feature an integrated functionality test for better system control. 500-950 V MOSFETs TLE/TLI/TLV4961/64/6: Energy-efficient Hall switch family for up to 32 V Applications XENSIVTM magnetic position sensors 20-300 V MOSFETs TLE/TLI4963/65-xM 5 V high-precision automotive/industrial Hall-effect sensors Automotive WBG semiconductors Operating point BOP Release point BRP Hysteresis BHY Latch 2.0 -2.0 4.0 Industrial - Package SOT23 TLE4963-2M Latch 5.0 -5.0 10.0 - SOT23 TLE4965-5M Unipolar switch 7.5 5.0 2.5 - SOT23 TLI4963-1M Latch 2.0 -2.0 4.0 - SOT23 TLI4963-2M Latch 5.0 -5.0 10.0 - SOT23 TLI4965-5M Unipolar switch 7.5 5.0 2.5 - SOT23 3.0 to 26 V operating supply voltage Low current consumption 1.6 mA ESD protection 4 kV HBM Operating temperature range from -40 to +125 C Leaded package TO92S Product Type Operating point BOP Release point BRP Hysteresis BHY Consumer Industrial Package TLV4961-1TA Latch 2.0 -2.0 TLV4961-1TB Latch 2.0 -2.0 4.0 TO92S-3-1 TO92S-3-1 4.0 TO92S-3-2 TLV4961-3TA Latch 7.5 TO92S-3-2 -7.5 15.0 TO92S-3-1 TLV4961-3TB Latch TO92S-3-1 7.5 -7.5 15.0 TO92S-3-2 TLV4964-4TA TO92S-3-2 Unipolar switch 10.0 8.5 1.5 TO92S-3-1 TO92S-3-1 TLV4964-4TB Unipolar switch 10.0 8.5 1.5 TO92S-3-2 TO92S-3-2 TLV4964-5TA Unipolar switch 7.5 5.0 2.5 TO92S-3-1 TO92S-3-1 TLV4964-5TB Unipolar switch 7.5 5.0 2.5 TO92S-3-2 TO92S-3-2 TLV4968-1TA Latch 1.0 -1.0 2.0 TO92S-3-1 TO92S-3-1 TLV4968-1TB Latch 1.0 -1.0 2.0 TO92S-3-2 TO92S-3-2 www.infineon.com/Hall-switches 286 Applications BLDC motor commutation for consumer devices (e.g. e-bikes, fans, aircons) Position detection e.g. flaps and control buttons Motor control ICs Features Gate driver ICs TLV496x-xTA/B Precision Hall-effect sensor for consumer applications in leaded package Discrete IGBTs Type TLE4963-1M Power ICs Product Microcontrollers Operating temperature range: - from -40 to +170C (TLE496x-xM) - from -40 to +125C (TLI496x-xM) Small SMD package SOT23 TLE: AEC-Q100 qualified TLI: JESD47 qualified XENSIVTM sensors Packages Features 3.0 to 5.5 V operating supply voltage Low current consumption 1.4 mA ESD protection 4 kV HBM Active error compensation (chopped) High stability of magnetic thresholds Low jitter (typ. 0.35 s) 500-950 V MOSFETs By offering an excellent magnetic behavior Infineon's switches are ideally suited for: Index counting application with a pole wheel Rotor position detection (BLDC motors) Open/close detection Applications XENSIVTM magnetic position sensors Product Type Operating point BOP Release point BRP Hysteresis BHY TLE4966K/L Double Hall, speed and direction output 7.5 -7.5 15 TSOP6/SSO-4-1 TLE4966-2K Double Hall, two independent outputs 7.5 -7.5 15 TSOP6 TLE4966-3K Double Hall, speed and direction output 2.5 -2.5 5 TSOP6 2.5 -2.5 5 TSOP6 Package www.infineon.com/Hall-switches 287 Packages XENSIVTM sensors Microcontrollers Motor control ICs Gate driver ICs Power ICs TLE4966V-1K Vertical double Hall, speed and direction output Automotive WBG semiconductors 500-950 V MOSFETs Applications Window lifter Sunroof Automatic tailgate Automated doors Sun blinds Discrete IGBTs Features Two Hall probes Excellent matching between the two Hall probes Hall plate distance of 1.45 mm Industry standard Outstanding quality Information on direction and speed TSOP6 package AEC-Q100 qualified 20-300 V MOSFETs TLE4966 Two-in-one double Hall sensor Programmable Number of pins Sensitivity Magnetic offset Supply voltage (extended range) TLE4997 EEPROM 3/ Single die SMD 8 12.5 to 300 < 400 T 5 V 10% (7 V) TLE4998P EEPROM 3/4/ Single die SMD 8 0.2 to 6%/mT < 400 T 5 V 10% (16 V) TLE4998S EEPROM 3/4/ Single die SMD 8 8.2 to 245 LSB/mT < 400 T 5 V 10% (16 V) TLE4998C EEPROM 3/4/ Single die SMD 8 8.2 to 245 LSB/mT < 400 T 5 V 10% (16 V) Automotive Interface Package Analog SSO-3-10 TDSO-8 PWM SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO- 8 SENT SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO-8 SPC SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO-8 www.infineon.com/linear-hall 288 500-950 V MOSFETs WBG semiconductors Packages XENSIVTM sensors Product Discrete IGBTs Applications Detecting linear and angular position Detecting pedal and throttle position Steering torque measurement Headlight leveling High-current sensing Seat position and occupant detection Suspension control Detecting gear stick/lever positions Detecting liquid levels in fuel tanks Current sensing e.g. for battery management Power ICs Features Best-in-class accuracy with low drift of output signal temperature range lifetime (including stress compensation in TLE4998) Programmable transfer function (gain, offset), clamping, bandwidth and temperature characteristics AEC-Q100 qualified Available in various packages including SSO-3-9 with two integrated capacitors to improve ESD and ESC behavior Dual-die SMD package ISO26262 ready Gate driver ICs Infineon's family of TLE499x linear Hall ICs is tailored to the needs of highly accurate angular and linear position detection and current measurement applications. Each product measures the vertical component of a magnetic field and outputs a signal that is directly proportional to the magnetic field. These programmable linear Hall sensors come with different interface options: TLE4997 features ratiometric analog output, while TLE4998P comes with pulse width modulation (PWM), TLE4998S with single edge nibble transmission (SENT) and TLE4998C with short PWM codes (SPC). These high-precision 12-bit resolution linear Hall sensors feature EEPROM memory for flexible programming across a wide range of parameters. Thanks to digital signal processing based on a 20-bit DSP architecture plus digital temperature compensation, these sensors deliver outstanding temperature stability compared with similar compensation methods. TLE4998 also includes stress compensation to withstand stress effects from the package, such as moisture, thus ensuring best-in-class accuracy over the device's lifetime. Motor control ICs TLE499x family: programmable analog/digital linear Hall sensor family Microcontrollers Linear Halls 20-300 V MOSFETs Applications XENSIVTM magnetic position sensors The SMD package (TDSO) includes two independent sensors with separate power supply and separate signal outputs. Due to special mounting technology, Infineon is able to keep dual-sensor package size very small to enable compact PCB layouts and small magnet sizes. Infineon offers a wide range of Hall sensors in the TDSO package. The combination of two sensors in one package offers sensors redundancy, a feature which is especially interesting for new generation EPS steering systems with increased ISO26262 requirements and other safety critical applications. All sensors are automotive qualified. Features Two sensors in one package Separate power supply and signal output AEC-Q100 qualified Temperature range from -40 to +125C Discrete IGBTs Outstanding quality Single-sensor versions available 16-pin and 8-pin versions available ISO26262 ready Power ICs Automotive applications Steering torque systems Pedal position Any other safety critical application 500-950 V MOSFETs Two sensors in one SMD package WBG semiconductors Dual linear Halls 20-300 V MOSFETs Applications XENSIVTM magnetic position sensors Interface Dual-/single-sensor available Package TLE4997A8D Analog Yes/yes TDSO-8 TLE4998P8D PWM Yes/yes TDSO-8 SENT Yes/yes TDSO-8 SPC Yes/yes TDSO-8 www.infineon.com/linear-hall 289 Packages XENSIVTM sensors Microcontrollers Motor control ICs TLE4998S8D TLE4998C8D Gate driver ICs Product Applications XENSIVTM magnetic position sensors Infineon's new magnetic sensor products TLE5501, are fast analogue TMR-based angle sensors dedicated to automotive applications. Their fields of use range from steering angle applications, with the highest functional safety requirements, to motors for wipers, pumps and actuators and electric motors in general. They are also ready to be used in industrial and consumer applications like robotics or gimbal. Angle sensors detect the orientation of an applied magnetic field by measuring sine and cosine angle components with monolithically integrated magneto resistive elements. Infineon's iGMR sensors are ideal for applications with a wide angle range, such as BLDC motors or steering sensors. They are pre-calibrated and ready-to-use. Different levels of signal processing integration enable designers to optimize system partitioning. The XENSIVTM iAMR sensors also perfectly fit applications with the highest accuracy requirements, as they offer best performance over temperature, lifetime and magnetic field range. WBG semiconductors Highest variety - low end to high end, standardized and specialized in all four magnetic technologies: Hall, GMR, AMR and TMR Discrete IGBTs Compact designs in small outline packages 500-950 V MOSFETs 20-300 V MOSFETs Angle sensors iGMR, iAMR and iTMR based angle sensors ISO26262 Sin/cos output Angle output Second interface Accuracy Package Single die Ready Analog sin/cos - - 0.9 DSO-8 TLE5009A16(D) GMR Dual die Ready Analog sin/cos - - 1.0 TDSO-16 TLE5011 GMR Single die Ready SSC (SPI) - - 1.6 DSO-8 TLI5012B GMR Single die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.9 DSO-8 TLE5012B(D) GMR Single and dual die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.0 DSO-8/ TDSO-16 TLE5014C16(D) GMR Single and dual die Compliant - SPC - 1.0 TDSO-16 TLE5014P16(D) GMR Single and dual die Compliant - PWM - 1.0 TDSO-16 TLE5014S16(D) GMR Single and dual die Compliant - SENT - 1.0 TDSO-16 TLE5014SP16(D) GMR Single and dual die Compliant - SPI - 1.0 TDSO-16 TLE5109A16(D) AMR Single and dual die Ready Analog sin/cos - - 0.5 TDSO-16 TLE5309D AMR + GMR Dual die Ready Analog sin/cos SSC (SPI) - AMR 0.5, GMR 1.0 TDSO-16 TLE5501 TMR Single die Compliant Analog sin/cos - - 1.0 DSO-8 Gate driver ICs Die configuration GMR Motor control ICs Technology TLE5009 www.infineon.com/angle-sensors 290 SPI = Serial peripheral interface IIF = Incremental interface PWM = Pulse width modulation Packages XENSIVTM sensors Microcontrollers Product Power ICs Diverse redundant sensor with analog and digital interface Tunneling Magneto Resisitive (iTMR) technology is offering high sensing sensitivity with a high output voltage, reducing the need for an internal amplifier. Thus, the sensor can be connected directly to the microcontroller without any further amplification. In addition, iTMR technology shows a very low temperature drift, reducing external calibration and compensation efforts. The iTMR technology is also well known for its low current consumption. 500-950 V MOSFETs iTMR based angle sensors 20-300 V MOSFETs Applications XENSIVTM magnetic position sensors Features Large output signals of up to 0.37 V/V for direct microcontroller connection Discrete bridge with differential sine and cosine output Very low supply current: ~2 mA Magnetic field range (20-100 mT) Typ. angle error ~ 1.0 (overtemperature and lifetime) DSO-8 package AEC-Q100, grade 0: TA = -40C to 150C (ambient temperature) For TLE5501 E0002: - Reaching ASIL D with just one single sensor chip - ISO26262-compliant development ASIL D Applications Steering angle sensor BLDC motor commutation (e.g. wipers, pumps and actuators) Angular position sensing for e.g. robotics or gimbal Electric motors Industrial automation Safety applications www.infineon.com/angle-sensors 291 Discrete IGBTs Packages XENSIVTM sensors Power ICs TLE5001 E0002: decoupled bridges for redundant external angle calculation and highest diagnostic coverage, realizing ISO26262-compliant development ASIL D Gate driver ICs Motor control ICs TLE5501 - product versions with different pin out: TLE5501 E0001: pin-compatible to TLE5009 automotive qualified acc. AEC-Q100 Microcontrollers With the TLE5501 products, Infineon is currently launching the first angle sensor products based on iTMR technology. TLE5501 is available in two versions. WBG semiconductors TLE5501 Applications XENSIVTM magnetic position sensors Features Easy-to-use, plug-and-play sensors, pre-configured and pre-calibrated Offering high flexibility: - Available as single and dual die products - 12bit digital interface with protocol options PWM, SENT, SPC and SPI - E2 PROM and look-up table for customer configuration and calibration X A/D Y A/D SPI N S Power ICs High angle accuracy: max. 1.0 over temperature and lifetime High voltage capability up to 26 V Development fully compliant with ISO26262 - Developed acc. ASIL D level - Dual die sensors reaching ASIL D, single die sensors ASIL-C metrics Safety manual and safety analysis summary report available on request CORDIC Discrete IGBTs 500-950 V MOSFETs All XENSIVTM TLE5014 angle sensors are available as single and dual die products. The products come pre-configured and pre-calibrated as plug-and-play sensors and are easy to use. Customers can choose between the interfaces SENT, PWM, SPC an SPI. On top of those protocol options, the sensors can be adapted to any kind of application setup via their programmable EPROM interfaces. TLE5014 magnetic angle sensors meet ISO26262 ASIL C for the single die and ISO26262 ASIL D for the dual die versions. All products are ready for applications with the highest functional safety requirements. The sensors show an extremely small angle error of less than 1 across the entire temperature profile and lifetime. This is particularly helpful in applications with the need for very accurate position sensing such as steering angle sensing or motor commutation. Further application areas range from rotor position measurement, electric power steering (EPS), pedal position to any other kind of position measurement. WBG semiconductors Digital iGMR sensor with an easy-to-use plug-and-play concept for highest functional safety applications 20-300 V MOSFETs TLE5014(D) Motor control ICs Gate driver ICs Applications Steering angle sensing (SAS) Motor commutation Rotor position measurement Pedal position Safety applications Any other kind of high-accuracy position measurement Features Features a differential or single-ended analog interface for sine and cosine values Internal temperature drift compensation for gain and offset N S Also available as a dual-sensor package ISO26262 ready Typical 0.1" angle error over lifetime and temperature range after compensation (max 0.5") Available as single and dual die product www.infineon.com/angle-sensors *Giant Magneto resistance 292 X cos Y sin Packages Analog iAMR sensor with temperature compensation XENSIVTM sensors Microcontrollers TLE5109A16(D) TLV493D-A1B6/TLI493D-A2B6 for consumer and industrial market Discrete IGBTs WBG semiconductors The TLV493D-A1B6 sensor realizes an accurate three-dimensional sensing with extremely low power consumption in a small 6-pin package. Capable of detecting the magnetic field in the x, y, and z-direction, the sensor is ideally suited for the measurement of linear, rotation or 3 dimensional movements. Thanks to its small package and low power consumption, the TLx493D-AxB6 can be used in new applications, replacing potentiometer and optical solutions. Featuring contactless position sensing and high temperature stability of the magnetic threshold, the sensor allows systems getting smaller, more accurate and more robust. 500-950 V MOSFETs 3D magnetic sensors 20-300 V MOSFETs Applications XENSIVTM magnetic position sensors Temperature range Qualification Linear magnetic Resolution range IDD Update rate Package Ordering code TLV493D-A1B6 -40 ... 125C JESD47 130 mT (typ) 98 T/LSB 7 nA - 3.7 mA 10 Hz - 3.3 kHz TSOP6 SP001286056 TLI493D-A2B6 -40 ... 105C JESD47 160 mT (min) 100 mT (min) 130 T/LSB (65 T/LSB)1) 7 nA - 3.3 mA 10 Hz - 8.4 kHz TSOP6 SP001689844 1) Half range mode While the TLV493D-A1B6 just supports a typical value for the linear magnetic range of 130 mT, the TLI493D-A2B6 specification includes also a minimum value of 160 mT. With the TLI493D-A2B6,s a broader microcontroller compatibility as well an enhanced feature set is included. New features Sensor address read back Short mode range setting, focusing on the half of the magnetic range, ensuring higher accuracy Higher update frequency allows for an application field that requires faster update speed Angular mode (for x and y read-out only) www.infineon.com/3dmagnetic 293 Applications Anti tempering protection in smart meters Joysticks e.g. for medical equipment, cranes, CCTV-control, game consoles Control elements e.g. white goods multifunction knobs Power ICs Gate driver ICs Digital output via a 2-wire standard I2C interface Bx, By and Bz linear field measurement up to 160 mT JESD47 qualified 12-bit data resolution for each measurement direction Various resolution options from 65 T/LSB to 130 T Operating temperature range from -40 to +125C Motor control ICs Product Microcontrollers Features 3D magnetic sensing Integrated temperature sensing Low current consumption - 7 nA in power-down mode - 10 A in ultralow power mode 2.8 to 3.5 V operating supply voltage Linear movement XENSIVTM sensors 3D movement Packages Rotation movement 3D magnetic sensors 20-300 V MOSFETs 3D magnetic sensors TLE493D-A2B6/W2B6 TLE493D-A2B6/W2B6 for automotive low power applications 3D magnetic sensors for automotive low-power applications 500-950 V MOSFETs Infineon's TLE493D-x2B6 enables for all kind of automotive control The TLE493D-x2B6 enables forthe all kind of automotive control element applications within passenger compartment element applications within the passenger compartment or under the hood with a temperature range of -40 to +125C, Digital output via a 2-wire standard I2C interface a 2-wire I C interface Bx, Byoutput and Bzvia linear fieldstandard measurement 160 mT Digital By and Bz linear field measurement 160 mT Bx, AEC-Q100 qualified qualified AEC-Q100 12-bit data resolution for each measurement direction 12-bit data resolution for each measurement Various resolution options from 67 T/LSB direction to 134 T resolution options from 67 T/LSB to 134 T Various Operating temperature range from -40 to +125C Operating temperature range up to -40 to +125C IDD Update rate Wakeup Package Ordering code TLE493D-A2B6 -40 ... 125C AEC-Q100 160 mT (min) 130 T/LSB (65T/LSB)1) 7 nA - 3.3 mA 10 Hz - 8.4 kHz No TSOP6 SP001689848 AEC-Q100 160 mT (min) 100 mT (min) 130 T/LSB (65T/LSB)1) TSOP6 SP001655334 SP001655340 SP001655344 SP001655348 -40 ... 125C 7 nA - 3.3 mA 0.05 Hz - 8.4 kHz Yes Power ICs Resolution Gate driver ICs Qualification Linear magnetic range 1) Half range mode Motor control ICs The TLE493D-A2B6 XENSIVTM sensor TLE493D-A2B6 includeread a sensor read-back feature for additional communication The features include afeatures sensor address backaddress feature for additional communication verification, a half verification, a half range mode focusing to half of the magnetic range, ensuring higher accuracy and an angular mode (for x range mode focusing to half of the magnetic range ensuring higher accuracy and an angular mode (for x and y read out only). and y readout only). With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature. Four address (A0-A3) bedeveloped, available, enabling for a fast up initialization, whenup used in I2CFour With pre-programmed the TLE493D-W2B6 A0-A3,options a 3D sensor haswill been which includes anstart enhanced dynamic wake feature. XENSIVTM sensors Microcontrollers bus configurations. It also includes enhanced options and a safetyfor documentation available towhen enable the in usage of pre-programmed address options (A0-A3) willtest be available, enabling a fast start-up is initialization, used I2C bus this sensor in the of ASILenhanced B systems. configurations. It context also includes test options, and a safety documentation is available to enable the usage of this sensor in the context of ASIL B systems. Applications Control elements for infotainment/navigation systems, air Applications conditions, multifunctional steering wheels, seat controls Control elements for infotainment/navigation systems, air conditions, multifunctional steering wheels, seat controls Top column modules e.g. direction indicator, Top column modules e.g. direction indicator, wiper control wiper control Gear stick position sensing Gear stick position sensing www.infineon.com/3dmagnetic www.infineon.com/3Dmagnetic 25 294 Sensor_Solutions_BR-2018.indb 25 23.07.2018 15:55:49 Packages Temperature range Discrete IGBTs 2 Product TLE493D-W2B6 A0 TLE493D-W2B6 A1 TLE493D-W2B6 A2 TLE493D-W2B6 A3 WBG semiconductors or under themagnetic hood withrange a temperature rangeup of -40 to +125C with linear requirements to 160 mT. with linear magnetic range requirements up to 160 mT. Features Features 3D magnetic sensing magnetictemperature sensing 3D Integrated sensing temperature sensing Integrated 2.8 to 3.5 V operating supply voltage tocurrent 3.5 V operating supply voltage 2.8 Low consumption Low current consumption - 0.007 A in power-down mode --0.007 Aininultralow power-down mode 10 A power mode --10Up Ato in10 ultra-low power mode power modes - Up to 10 power modes Applications XENSIVTM magnetic position sensors Features Large operating air gap capability Twist-independent mounting Hidden adaptive hysteresis Low current consumption Reverse magnetic polarity capability Advanced protection technology - Reverse voltage protection at VS-pin - Short-circuit protection - Overtemperature protection Wide operating temperature ranges of -40C Tj 150C High ESD robustness up to 4 kV HBM 3-wire PWM voltage interface Applications Two-wheeler Automotive vehicle speed www.infineon.com/magnetic-sensors 295 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs This sensor is specially designed to provide an easy-to-use, robust and cost-effective solution for vehicle or industrial speed sensing applications. The TLE4922 can, therefore, be back-biased using a simple, low-cost bulk magnet, while providing a good air gap performance and switching accuracy. Its hidden adaptive hysteresis and calibration algorithm enable good accuracy over air gap jumps and immunity to vibration and run-out events. Gate driver ICs Highly robust, easy-to-use mono-Hall speed sensor with twist-independent mounting Motor control ICs TLE4922 Microcontrollers Infineon's Hall- and GMR-based magnetic speed sensors are designed to measure speed in safety and powertrain applications such as speedometers, ABS, camshafts/crankshafts and automatic transmissions. They are also used in similar applications in the industrial sector. The sensors use a ferromagnetic gear tooth or encoder structure to measure linear or rotational speed and position. Hall sensor measuring rotational speed with a gear tooth and a magnetic encoder wheel. The majority of sensors also feature additional benefits such as integrated capacitors (Ctypes) for high EMC robustness and the highest levels of ESD protection. Modern powertrain systems rely on magnetic speed sensors, along with automotive pressure sensors, to achieve the required CO2 targets and smart powertrain solutions. Infineon offers a broad variety of magnetic speed sensors for camshaft, crankshaft and transmission applications. XENSIVTM sensors Easy-to-use, robust and cost-effective sensors for speed measurement Packages Magnetic speed sensors 20-300 V MOSFETs Applications XENSIVTM magnetic speed sensors TLE4929 Fully programmable crankshaft sensor The TLE4929 is an active Hall sensor ideally suited for crankshaft applications and similar industrial applications, such as speedometer or any speed sensor with high accuracy and low jitter capabilities. Automotive Industrial Sensor technology AEC-Q100 qualified RoHS HAL free Product status TLE4922 Mono-Hall In production TLE4929 Differential Hall In production www.infineon.com/magnetic-sensors 296 Packages XENSIVTM sensors Microcontrollers Motor control ICs Product Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors Features Differential Hall speed sensor to measure speed and position of tooth/pole wheels Switching point in the middle of the tooth enables backward compatibility Robustness over magnetic stray-field due to differential sensing principle Digital output signal with programmable output-protocol including diagnosis interface Direction detection and stop-start-algorithm High accuracy and low jitter High sensitivity enable large air gap End-of-line programmable to adapt engine parameters Can be used as a differential camshaft sensor Automotive operating temperature range 500-950 V MOSFETs 20-300 V MOSFETs Applications XENSIVTM magnetic speed sensors Infineon's XENSIVTM sensor 2GO kits are budget-priced evaluation boards that are already equipped with a sensor combined with an ARM(R) Cortex(R)-M0 CPU. The sensor 2GO kits provide a complete set of onboard devices, including an onboard debugger. Build your own application and gadget with the sensor 2GO kits. Our 2GO kits are ready-to-use, plug-and-play boards. 3D magnetic sensor 2GO kit features We offer three different derivatives - TLE493D-A2B6 (three dimensional magnetic sensor) - TLE493D-W2B6 (three dimensional magnetic sensor) - TLV493D-A1B6 (three dimensional magnetic sensor) XMC1100 (ARM(R) CortexTM-M0 based) Onboard J-Link Lite debugger (realized with XMC4200 microcontroller) Power over USB (micro USB), ESD and reverse current protection Speed sensor 2GO kit features Budget-priced evaluation board for speed sensing Complete speed sensor incl. back-bias magnet, fixing and cable TLE4922 (active mono cell Hall sensor) XMC1100 (ARM(R) CortexTM-M0 based) Onboard J-Link Lite debugger (realized with XMC4200 microcontroller) Power over USB (micro USB), ESD and reverse current protection GUI based tool for real in-application evaluation for free download www.infineon.com/sensors2go 297 Motor control ICs Microcontrollers Current sensor 2GO kit features TLI4970-D050T4 (current sensor with digital interface) XMC1100 (ARM(R) Cortex(R)-M0 based) Onboard J-link lite debugger (realized with XMC4200 microcontroller) Power over USB (micro USB), ESD and reverse current protection GUI for free download Gate driver ICs GUI for free download XENSIVTM sensors 500-950 V MOSFETs Plug-and-measure evaluation board First measurements possible within minutes Various mechanical adapters for 3D magnetic sensor available for quick evaluation Packages WBG semiconductors Smallest, fully featured sensor 2GO evaluation kits for current, low-cost rotational speed, 3D magnetic sensors and angle sensors with optional joystick adapter, rotation knob, linear slider and out-of-shaft adapter, as well as digital barometric air pressure sensor and XENSIVTM MEMS microphones. Discrete IGBTs Infineon's solutions for quick evaluation Power ICs Sensor 2GO kits 20-300 V MOSFETs Applications XENSIVTM - Sensor 2GO kits Rotate knob Product information: Rotate and push button control element Simulates rotational and angle sensing movements The user manual in the download area precisely explains usage, mounting and functionality and functionality www.infineon.com/sensors2go 298 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Packages XENSIVTM sensors Microcontrollers Linear slider Easy mounting on 3D Magnetic Sensor 2GO First magnetic linear evaluations within minutes Flexible setup: adaptable airgaps, two different magnetic strengths/ materials and distance limiters Power ICs Joystick adapter Product information: Easy mounting on 3D magnetic sensor 2GO First magnetic joystick measurements within minutes The user manual in the download area explains usage, mounting and functionality Gate driver ICs Out of shaft adapter for angle measurements Product information: Easy mounting on all 3D magnetic sensor 2GO kits First angle measurement in out-of-shaft configuration Three different out-of-shaft configurations possible Magnetic rotation bar with ring magnet included Motor control ICs Add on components for 3D magnetic sensor 2GO kit 20-300 V MOSFETs Applications XENSIVTM - Sensor 2GO kits MEMS 2GO The flex evaluation kit allows simple and easy evaluation of XENSIVTM MEMS microphone IM69D130. The flex board can be easily connected to audio testing setup. The evaluation kit includes five IM69D130 mounted on flex board and one adapter board. www.infineon.com/sensors2go 299 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Packages XENSIVTM sensors Features Quick and easy evaluation of XENSIVTM MEMS microphones Flex dimensions: 25 x 4.5 mm Adapter dimensions: 20 x 15 mm Power ICs XENSIVTM magnetic current sensor TLI4970-D050T4 with integrated current rail XENSIVTM MEMS microphone IM69D130 ESP32 - Wemos form factor including BLE and WIFI functionality Dual-adapter Trust X - adapter for Infineon Shield2Go board with Wemos form factor equipped with OPTIGATM Trust X Triple-adapter - adapter for Infineon Shield2Go board form factor compatible with Arduino Uno (alternatively: Grove Base_Shield_V2) USB-cable and soldering connectors Gate driver ICs Motor control ICs A box consists of: XENSIVTM magnetic position sensor TLV493D-A1B6 Rotate knob - add-on component for 3D magnetic Hall sensor Joystick - add-on component for 3D magnetic Hall sensor OPTIGATM Trust E - hardware security chip XENSIVTM pressure sensor DPS310 for consumer XMC 1100 Bootkit - 32-bit microcontroller based on ARM(R) Cortex(R)-M form factor compatible with Arduino Uno XMC2Go (qty 2) - 32-bit microcontroller based on ARM(R) Cortex(R)-M in Shield2Go form factor Microcontrollers Getting Started Box IoT For fast, flexible and easy prototyping - never been easier 20-300 V MOSFETs Applications XENSIVTM - Sensor 2GO kits Infineon's Shield2Go boards offer a unique customer and evaluation experience. The boards are equipped with a featured Infineon's XENSIVTM sensor and come with a ready-to-use software library for Arduino. Customers can now develop their own system solutions by combining Shield2Go boards with Infineon My IoT adapter, which serves as a gateway to external hardware solutions and popular IoT evaluation platforms such as Arduino and Raspberry PI. All this enables the fastest evaluation and development of an IoT system on the market. TLV493D 3DSense Shield2Go Featured product: XENSIVTM magnetic position sensor TLV493D-A1B6 OPN: S2GO3DSENSETLV493DTOBO1 500-950 V MOSFETs Easy evaluation for shorter time to market WBG semiconductors Shield2Go boards and My IoT adapter 20-300 V MOSFETs Applications XENSIVTM - Shield2Go Interfaces: PWM UART Analog TLI4970 Current Sense Shield2Go Featured product: XENSIVTM magnetic current sensor TLI4970-D050T4 OPN: S2GOCURSENSETLI4970TOBO1 Interfaces: I2C SPI INT PWM UART Analog DPS310 Pressure Shield2Go Featured product: XENSIVTM pressure sensor DPS310 OPN: S2GOPRESSUREDPS310TOBO1 Discrete IGBTs INT Power ICs SPI Gate driver ICs I2C Interfaces: UART Analog IM69D130 Microphone Shield2Go Featured product: XENSIVTM MEMS microphone IM69D130 OPN: S2GOMEMSMICIM69DTOBO1 Interfaces: I2C SPI INT PWM UART Analog The My IoT adapter board enables designers to combine the Shield2Go boards into a system. Infineon's flexible evaluation boards are compatible with the existing solutions on the market. My IoT adapters act as gateways to external hardware solutions such as Arduino, one of the most common IoT evaluation and prototyping platforms. OPN: MYIOTADAPTERTOBO1 www.infineon.com/2go www.infineon.com/sensors2go 300 Motor control ICs PWM Microcontrollers INT XENSIVTM sensors SPI Packages I2C Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Sensors support 2GO evaluation kits www.infineon.com/sensors2go Online simulation tools www.infineon.com/cms/en/product/sensor/#!simulation Motor control ICs Microcontrollers www.infineon.com/angle-sensors www.infineon.com/3dmagnetic www.infineon.com/pressuresensor www.infineon.com/24GHz www.infineon.com/pressure XENSIVTM sensors Further information, datasheets and documents www.infineon.com/sensors www.infineon.com/microphones www.infineon.com/magnetic-sensors www.infineon.com/current-sensor www.infineon.com/hall-switches Packages Useful links and helpful information Gate driver ICs Infineon support for sensors Packages Surface mount device (SMD) technology 3.0 x 2.8 x 1.1 SC59 6.5 x 7.0 x 1.6 3.3 x 3.3 x 1.0 TDSON-10-7 10 3.0 x 3.0 x 0.9 TSON-8-3 8 5.0 x 6.0 x 1.0 3 x 3 x 0.75 2.0 x 2.1 x 0.9 5.15 x 6.15 x 1.0 3.3 x 3.3 x 1.0 5.0 x 5.0 x 1.0 3 x 3 x 0.75 2.0 x 2.1 x 0.9 5.15 x 6.15 x 1.0 TISON-8 8 7.0 x 7.0 x 1.0 3.3 x 3.3 x 1.0 WSON-10 10 4.0 x 4.0 x 0.8 15.0 x 10.0 x 4.4 2.9 x 1.6 x 1.3 6 2.9 x 2.5 x 1.1 7 15.0 x 10.0 x 4.4 TO-Leadless (TOLL) 8 4.5 x 4.0 x 1.5 2.0 x 2.0 x 0.9 11.68 x 9.9 x 2.3 SOT-223 4 5.15 x 6.15 x 1.0 6.5 x 7.0 x 1.6 PQFN 2x2 dual 6 TDSON-8-47 8 2.0 x 2.0 x 0.9 TDSON-10-2 10 TISON-8 (power stage 5x6) TISON-8-4 (Power Block) 8 5.0 x 6.0 x 1.0 TSNP-6-13 6 1.5 x 1 x 0.375 DirectFETTM Small Can V 4.8 x 3.8 x 0.65 8 5.0 x 6.0 x 1.0 8.0 x 8.0 x 1.0 DirectFETTM Medium Can V 6.3 x 4.9 x 0.65 V = Variable number of pins 302 9.1 x 6.98 x 0.71 XENSIVTM sensors pin-count www.infineon.com/packages 4.0 x 4.0 x 0.9 DirectFETTM Large Can V LxWxH All dimensions in mm 3.0 x 3.0 x 1.0 VDSON-8 8 Package (JEITA-code) X 3.0 x 3.0 x 0.9 TSON-8-1 8 ThinPAK 8x8 (VSON-4) 4 500-950 V MOSFETs 15.0 x 10.0 x 4.4 PQFN 2x2 6 SuperSO8 fused leads 5.15 x 6.15 x 1.0 D2PAK (TO-263) 3 SOT-89 3 TSOP6 8 20.96 x 15.0 x 2.3 D2PAK 7-pin (TO-263) SOT-23-6 6 TSON-10 10 WSON-8-3 8 2.9 x 1.6 x 1.3 SuperSO8 dual 8 ThinPAK 5x6 (TSON-8) 8 7 SOT-363 6 TSDSON-8-25 fused leads 8 15.0 x 10.0 x 4.4 HDSOP-22-1 22 TO263-7-13 SOT-23-5 5 SuperSO8 8 WSON-6-1 6 2.9 x 2.4 x 1.0 SOT-323 3 PQFN 3.3x3.3 8 7 SOT-23 3 SOT223-3-1 3 15.0 x 10.0 x 4.4 TO263-7-12 20.96 x 6.5 x 2.3 WBG semiconductors 3 7 HDSOP-10-1 10 Discrete IGBTs 15.0 x 10.0 x 4.4 TO263-7-11 9.9 x 6.5 x 2.3 Power ICs 2 DPAK 5-pin (TO-252) 5 Gate driver ICs D2PAK (TO-263-2) 9.9 x 6.5 x 2.3 Motor control ICs DPAK (TO-252) 3 Microcontrollers 9.9 x 6.5 x 2.3 All products are RoHS Compliant. Packages DPAK (TO-252-2) 2 20-300 V MOSFETs Applications Package overview 5.0 x 6.0 x 1.75 10.3 x 7.5 x 2.35 28 18.1 x 10.3 x 2.65 12.6 x 12.6 x 1.5 15.9 x 11.0 x 3.5 5 x 5 x 0.96 5 x 5 x 0.85 16 10.0 x 6.0 x 1.75 6 x 8.65 x 1.75 (max) 9.7 x 6.4 x 1.2 26.7 x 26.7 x 2.1 6 x 6 x 0.85 12.8 x 10.3 x 2.65 5.0 x 6.0 x 1.2 19 12.8 x 10.3 x 2.65 12.5 x 6.1 x 1.1 22.4 x 22.4 x 2.2 7 x 7 x 0.85 6.0 x 6.0 x 0.8 12 10.3 x 7.8 x 2.6 (max) 20 12.8 x 10.3 x 2.65 DSO-12 SO-19 SO-20 LFBGA-516-5 516 25.3 x 25.3 x 2.8 LFBGA-292-6 292 TQFP-144-27 144 VQFN-48-78 (LTI) 48 IQFN-40 40 SO-18 LQFP-144-22 144 VQFN-48-60 48 18 TSSOP-48 48 LQFP-176-22 176 5.0 x 6.0 x 0.9 TDSO-16 16 TSSOP-28 28 IQFN-39 39 SO-16 SSOP-24 VQFN-40-13 40 7.5 x 6.0 x 0.9 SO-14 TFLGA-13-1 13 IQFN-36 36 18.7 x 18.7 x 1.6 VQFN-56-5/-6 56 7 x 7 x 0.9 17.3 x 17.3 x 2.35 TQFP-100-23 100 14.5 x 14.5 x 1.5 Package (JEITA-code) X LxWxH 500-950 V MOSFETs 8.75 x 6.0 x 1.75 SO-36 36 TQFP-80-7 80 14 DSO-24 BGA-416-26 27.3 x 27.3 x 3.2 10.0 x 6.0 x 1.75 24 10.5 x 15.6 x 2.65 (max) 24 DSO-28 416 5.0 x 5.0 x 0.8 SO-16/12 12 DSO-16-30 (300 mil) 16 IQFN-31 (DrMOS 5x5) 31 WBG semiconductors SO-8/SO-8 dual 8 4.0 x 4.0 x 1.0 Discrete IGBTs IQFN-30 (DrMOS 4x4) 30 Power ICs 3.3 x 6.0 x 0.9 Gate driver ICs IQFN-27-2 27 20-300 V MOSFETs Applications Package overview pin-count XENSIVTM sensors Microcontrollers All dimensions in mm Motor control ICs V = Variable number of pins www.infineon.com/packages 303 Packages All products are RoHS Compliant. TO220 FullPAK 3 29.6 x 10.5 x 4.7 IPAK SL (TO251 SL) 3 41.3 x 10.9 x 5.18 3 28.25 x 10.5 x 4.5 29.6 x 10.5 x 4.7 25.1 x 10 x 4.4 3 28.85 x 11 x 4.7 7 9.52 x 8.9 x 4.37 3 A: 3.71 x 5.34 x 1 B: 2.68 x 5.34 x 1.2 TO247 4-pin 4 Super220 3 I2PAK (TO262) 3 TO220 real 2-pin 2 40.15 x 15.9 x 5.0 3 34.6 x 15.6 x 5 6 21.7 x 9.9 x 4.4 8 9.52 x 8.9 x 4.37 DIP-7 Super247 29.15 x 10.0 x 4.4 TO220 2-pin 2 TO220-6-46 TO220 FullPAK Narrow Lead TO220 FullPAK Wide Creepage TO247-3-AI 3 10.7 x 6.5 x 2.3 26.1 x 9.9 x 4.4 14 19.5 x 8.9 x 4.37 4.06 x 1.5 x 4.05 29.15 x 10.0 x 4.4 3 40.15 x 15.9 x 5.0 20 24.6 x 9.9 x 4.2 TO247 DIP-14 SSO-3-10 3 TO220 3-pin 3 TO220-6-47 6 DIP-8 SSO-3-9 29.1 x 9.9 x 4.4 DIP-20 SSO-4-1 4 5.34 x 1.0 x 3.71 TO92S-3-1 3 4.0 x 1.52 x 3.15 500-950 V MOSFETs 15.5 x 6.5 x 2.3 WBG semiconductors IPAK (TO251) 3 Discrete IGBTs Through-hole device (THD) technology 20-300 V MOSFETs Applications Package overview Power ICs A B 3 TO92S-3-2 Package (JEITA-code) 4.0 x 1.52 x 3.15 X LxWxH pin-count Gate driver ICs V = Variable number of pins XENSIVTM sensors Microcontrollers Motor control ICs All dimensions in mm www.infineon.com/packages 304 Packages All products are RoHS Compliant. Videos www.infineon.com/mediacenter Motor control ICs Microcontrollers Further information, datasheets and documents www.infineon.com/packages XENSIVTM sensors Useful links and helpful information Packages Infineon support for packages Gate driver ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Packages support Infineon powerful support Useful links and helpful information General support www.infineon.com/support www.infineon.com/wheretobuy www.infineon.com/quality www.infineon.com/packages www.infineon.com/green www.infineon.com/opn Tools, desks and more www.infineon.com/solutionfinder www.infineon.com/lightdesk www.infineon.com/evaluationboards www.infineon.com/webinars Request reliability (FIT) data http://infineon-community.com/FIT_1 Register for the Newsletter4Engineers http://infineon-community.com/Newsletter4Engineers A world leader in semiconductor solutions Our vision We are the link between the real and the digital world. 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Order number: B131-I0773-V1-7600-EU-EC-P Date: 02 / 2019 Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.