MOTOROLA SC XSTRS/R F 2e D ff b3b7254 ooanea7 7 ff 7-27-26 MAXIMUM RATINGS FET DIP Rating Symbot | IRFD9110 | IRFD9112 | Unit CASE 370-01, STYLE 1 Drain-Source Voltage Voss 100 Vdc 1 Drain Drain-Gate Voltage (Rgg = 20 kf) VDGR ~ 100 Vde Gate-Source Voltage Ves +20 Vde Drain Current Adc [ Continuous Tg = 25C Ip -0.7 -0.6 3 2 Pulsed IDM -3.0 -25 2 Gate Total Power Dissipation Pp 3 Source @Tc = 26C 1.0 Watts Derate above 25C 8.0 mWwrc - TMOS FET Operating and Storage Ty. Tstg 55 to +150 Cc TRANSISTORS Temperature Range THERMAL CHARACTERISTICS P-CHANNEL ENHANCEMENT Thermal Resistance Junction to Rasa 120 c Ambient (Free Air Operation) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) | Characteristic [Symbol | Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 100 - _ Vde (Vag = 0, 1p = 250 pA) Zero Gate Voltage Drain Current {Vpsg = Rated Voss Vas = 0 V) 'pss = _ 250 pAde Gate-Body Leakage Current, Forward (VGsp = 20V) IGssF = _ 500 nAdc Gate-Body Leakage Current, Reverse (V@sp = 20 V} lessr - _ 500 nAdc ON CHARACTERISTICS Gate Threshold Voltage VG6sith) 2.0 _- 4.0 Vde (Ip = 250 #A, Vps = Ves) Static Drain-Source On-Resistance(1) IRFO9110 'DS(on) _ - 1.2 Ohms (Veg = 10 Vde, Ip = 0.3 A) IRFD9112 - _- 1.6 On-State Drain Current(1) IRFD9110 ID(on) 0.7 _ _ Adc {Vgg = 10V. Vps = -5.0V) IRFD9112 0.6 _ - Forward Transconductance(t} Sfs 0.6 - - mhos (lp = -0.3.4,Vps = 5.0V) CAPACITANCE Input Capacitance Ciss =- _ 250 pF " (Vps = 25V, Vag = 0 _ a Output Capacitance = 1,0 MHz) Coss 100 Reverse Transfer Capacitance Crss - _ 35 SWITCHING CHARACTERISTICS Turn-On Delay Time tdton) - _ 30 ns Rise Time (Vos = 0.5 ViBRiDSS: tr = - 60 Turn-Off Delay Time Ip = 0.3 A, Zp = 50.9) td(off) _ - 40 Fall Time tf _ _ 40 SOURCE-DRAIN DIODE CHARACTERISTICS Diode Forward Voltage (VGg = 0} Ig = 0.7 A, IRFD9110 Vsp _ - 6.5 Vdc Ig = 0.6 A, IRFO9112 - _ 5.3 Continuous Source Current, Body Diode IRFD9110 Is _ - -0.7 Ade IRFD9112 _- _ -0.6 Pulsed Source Current, Body Diode IRFD9110 ism - = -3.0 A IRFD9112 = - 2.5 Forward Turn-On Time (lg = Rated Ig, Veg = 0) ton negligible ns Reverse Recovery Time ter - | 120 | _ (1) Pulse Test: Pulse Width = 300 ys, Duty Cycle < 2.0%, MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-94