PD-9.389G IRFD9110 International Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating @ Repetitive Avalanche Rated @ For Automatic Insertion @ End Stackable @ P-Channel 175C Operating Temperature @ Fast Switching Voss = -1 O0OV Rosvon) = 1.20 5 Ip = -0.70A Description . Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 wait. HD-1 Absolute Maximum Ratings Parameter Max. Units lp @ To = 26C Continuous Drain Current, Vas @ -10 V -0.70 Ip @ Te = 100C | Continuous Drain Current, Vas @ -10 V -0.49 A lpm Pulsed Drain Current 5.6 Pp @ Tc = 25C _| Power Dissipation 1.3 Ww Linear Derating Factor 0.0083 wre Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 140 mJ lan Avalanche Current -0.70 A Ear Repetitive Avalanche Energy 0.13 mJ dv/dt Peak Diode Recovery dv/dt_ @ 5.5 Vins Ty Operating Junction and -65 to +175 Tsta Storage Temperature Range i @} Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Resa Junction-to-Ambient _ _ 120 C/W 539IRFD9110 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierypss Drain-to-Source Breakdown Voltage -100 | ~ V_ i Vag=0V, Ip=-250nA AV erypss/ATu| Breakdown Voltage Temp. Coefficient _|-0.091/ | VPC | Reference to 25C, in=-1mA Rosjon) Static Drain-to-Source On-Resistance _ _- 1.2 Q | Vas=-10V, Ip=-0.42A Vasith) Gate Threshold Voltage 20 | | -4.0 V__| Vos=Ves, Ip=-250nA Os Forward Transconductance 0.60) |S8 | Vos=-50V, Ip=-0.42A @ loss Drain-to-Source Leakage Current _| =100 LA Vos=-100V, Vas=0V _ | -500 Vos=-80V, Ves=0V, Ty=150C lass Gate-to-Source Forward Leakage _ | -100 nA Vaes=-20V Gate-to-Source Reverse Leakage _ | 100 Vas=20V. Qg Total Gate Charge _ _ 8.7 lp=-4.0A Qgs Gate-to-Source Charge _ _ 2.2 nC | Vps=-80V Qoga Gate-to-Drain ("Miller") Charge _ _ 4.1 Vas=-10V See Fig. 6 and 13 @ tavon) Turn-On Delay Time _ 10 _ Vop=-50V t Rise Time 27 _ ns Ip=-4.0A tarott) Turn-Off Delay Time _ 15 _ Re=24Q tt Fall Time _ 17 = Ro=11Q See Figure 10 @ Lo Internal Drain Inductance 40 | B mn (o. goad ) g nH | from package (i Ls Internal Source Inductance | 60] and center of a) die contact 8 Ciss Input Capacitance | 200 _ Vas=0V Coss Output Capacitance _ 94 _ pF | Vps=-25V Crss Reverse Transfer Capacitance _ 18 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ |o70 MOSFET symbol o (Body Diode) . A showing the Ism Pulsed Source Current _ | 56 integral reverse a (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage ~!| |55] Vv oo Is=-0.70A, Ves=0V ter Reverse Recovery Time _ 82 160 ns | Ty=25C, Ip=-4.0A Orr Reverse Recovery Charge | 0.15 | 0.30; pC | di/dt=100A/us @ Notes: @ Repetitive rating; pulse width limited by Isp<-4.0A, di/dis75A/us, Vob<V(BR)Dss, - max. junction temperature (See Figure 11) Tys175C Vpp=-25V, starting Tj=25C, L=52mH Pulse width < 300 ps; duty cycle <2%. Ra=25Q, las=-2.0A (See Figure 12) 540-lp, Drain Current (Amps) -lp, Drain Current (Amps) ~4.5V ~Ip, Drain Current (Amps) 20us PULSE WIDTH To = 25C -Vpg, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vog = ~50V 20us_PULSE_WIDTH Ropscon); Drain-to-Source On Resistance (Normalized) -Vgs, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRFD9110 -4,5V 20us PULSE WIDTH Te = 175C -Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Te=175C es = 74 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 541IRFD9110 350 Cgsg + Cgqg Cas Cgq + 280 & Ss Capacitance (pF) Css -Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 -lgp, Reverse Drain Current (Amps) Ves = OV 4 . . -Vsp, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage 0 -Ves, Gate-to-Source Voltage (volts) -Ip, Drain Current (Amps) 20 a no o iS FOR TEST CIRCUIT SEE FIGURE 13 2 0 Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10? 5 OPERATION IN THIS AREA LIMITED BY Fos (oN) 2 10 5 e 4 5 2 0.1 5 Tcp=25C a Ty=4759C 10? SINGLE 04? 5 4 2 8 40 2 $5 10% 2 5S 493 -Vps, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area 542-lp, Drain Current (Amps) 0.8 2 a o n no 0.0 25 50 Fig 9. Maximum Drain Current Vs. 75 100 125 150 475 Tc, Case Temperature (C) IRFD9110 D Vos > WA D.U.T. y +, Voo Puise Width < ips Duty Factor < 0.1% <t Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zajc) 4103 Oo os a Q B oO a 40 Fig 11. SINGLE PULSE Pot (THERMAL RESPONSE) tee] 4. QUTY FACTOR, O=t41/t2 2, PEAK Tj=Ppm X Zthjce + Te 105 1074 109 10? O.4 4 40 102 103 t;, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal impedance, Junction-to-Case 543IRFD9110 , Vary tp to obtain VDS> required las D.U.T. 350 300 las 250 0.012 200 Fig 12a. Unclamped inductive Test Circuit 450 lag as 100 Eas, Single Pulse Energy (mJ) 50 Vos 0 2s 50 75 100 126 150 475 | tp Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Same Type as D.U.T. J bone nee eee eee eee Charge la * bb Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing See page 1507 Appendix C: Part Marking Information See page 1515 int em ati onal Rectifier 544