7MBR15SA120 IGBT Modules IGBT MODULE (S series) 1200V / 15A / PIM Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Brake t No -IC PC VCES VGES IC o c e r Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Rat ing 1200 20 25 15 50 30 15 110 1200 20 25 15 50 30 110 1200 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous Tc=25C Tc=80C Tc=25C Tc=80C nd e mm ICP Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter VCES VGES IC Condition 1ms 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V N*m 7MBR15SA120 IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1800 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Converter Thermistor IF=15A Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Turn-off time VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=15A VGE=15V RG=82 chip terminal IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V IF=15A chip terminal VR=1600V T=25C T=100C T=25/50C for nd e mm Symbol ot Thermal resistance ( 1 device ) N Contact thermal resistance o c e r Rth(j-c) * Rth(c-f) 1.0 0.3 V 3.2 0.35 1.0 0.2 465 3305 w ne Condition Min. 2.6 1.2 0.6 1.0 0.3 1.0 1.1 1.2 n. sig 5000 495 3375 pF s 1.2 0.6 2.1 2.2 0.35 0.25 0.45 0.08 de Thermal resistance Characteristics Item 0.35 0.25 0.1 0.45 0.08 2.3 2.35 mA A V V s mA V 1.5 1.0 mA 520 3450 K Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Unit 1.14 1.85 1.14 1.30 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [In v er ter ] [T h e rm is to r] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 8 (G v) 1 9 (E u ) 7 (B ) 1 4 (G b) 1 6 (G w ) 1 7 (E v ) 4 (U ) 1 3 (G x) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) http://store.iiic.cc/ s mA A V 9 C/W 7MBR15SA120 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 35 Tj= 125 C (typ.) 35 15V 15V 12V 12V VGE= 20V 30 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 20 10V 15 10 5 20 10V 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage o 35 Tj= 25 C (typ.) 10 o 5 o Tj= 25 C Tj= 125 C 30 Collector - Emitter voltage : VCE [ V ] 8 20 10 mm 5 0 0 1 2 eco 3 4 4 t No d en Ic= 15A Ic= 7.5A 0 5 5 r 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) o o Vcc=600V, Ic=15A, Tj= 25 C VGE=0V, f= 1MHz, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 5000 Cies 1000 500 Coes 100 Ic= 30A 2 Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 15 . de 6 1000 25 800 20 600 15 400 10 200 5 Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 7MBR15SA120 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=82, Tj=25C 1000 Vcc=600V, VGE=15V, Rg=82, Tj=125C 1000 toff toff 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr 100 ton tr tf 100 tf 50 50 0 5 10 15 20 25 0 5 10 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton e m m nd tf 50 30 4 100 o c e r Gate resistance : Rg [ t No 2 Eon(125 C) n sig w ne o Eon(25 C) o Eoff(125 C) o Eoff(25 C) 1 o Err(125 C) o Err(25 C) 0 1000 0 5 10 ] 15 20 25 30 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=15V, Tj=125C [ Inverter ] Reverse bias safe operating area 12 +VGE=15V, -VGE= <15V, Rg>82, Tj<125C = = 40 10 o . de 3 for toff Eon 30 8 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 500 100 25 Vcc=600V, VGE=15V, Rg=82 5 1000 tr 20 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, Ic=15A, VGE=15V, Tj=25C 5000 15 Collector current : Ic [ A ] 6 4 20 10 Eoff 2 Err 0 0 30 100 Gate resistance : Rg [ 1000 ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Modules 7MBR15SA120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=82 [ Inverter ] Forward current vs. Forward on voltage (typ.) 35 300 o o Tj=125 C 30 Tj=25 C o trr(125 C) Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 20 15 10 Reverse recovery time : trr [ nsec ] 100 25 o trr(25 C) 50 o Irr(125 C) 10 5 o Irr(25 C) 0 5 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 35 o Tj= 25 C o Tj= 125 C 30 Forward current : IF [ A ] 25 n sig ew n for 15 10 5 0 0.0 . de 20 0.4 0.8 nd e mm eco 1.2 1.6 2.0 r Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 100 FWD[Inverter] IGBT [Inverter,Brake] Resistance : R [ k ] o Thermal resistanse : Rth(j-c) [ C/W ] Conv. Diode 1 0.1 10 1 0.01 0.001 0.01 0.1 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 Temperature [ http://store.iiic.cc/ 80 o C] 100 120 140 160 180 7MBR15SA120 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 35 15V VGE= 20V 15V VGE= 20V 12V 30 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] Tj= 125 C (typ.) 35 20 10V 15 10 5 12V 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj= 25 C (typ.) 10 35 o o Tj= 125 C Tj= 25 C 30 Collector - Emitter voltage : VCE [ V ] 8 20 10 e m m 4 Ic= 30A nd 5 0 0 1 2 3 eco 4 t No r Ic= 7.5A 0 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 Ic= 15A 2 Collector - Emitter voltage : VCE [ V ] Vcc=600V, Ic=15A, Tj= 25 o C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 15 . de 6 Cies 1000 500 Coes o C 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 IGBT Modules 7MBR15SA120 Outline Drawings, mm de ew n for nd e mm t No o c e r http://store.iiic.cc/ . n sig