RUR040N02
Transistors
1/4
1.5V Drive
Nch
MOSFET
RUR040N02
zStructure
Silicon N-channel
MOSFET
zFeatures
1) 1.5V drive
2) Low On-resistance.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSMT3).
zApplication
Switching
zPackaging specifications
Package
Code Taping
Basic ordering unit (pieces)
RUR040N02
TL
3000
Type
zA bsolute maximum ratings (Ta=25°C)
∗1
∗1
∗2
Parameter VV
DSS
Symbol 20 VV
GSS
±10 AI
D
±4.0 AI
DP
±8.0 AI
S
0.8 AI
SP
8.0 WP
D
1.0
°CTch 150
°CTstg −55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
zThermal resistance
°C / W
Rth (ch-a) 125
Parameter Symbol Limits Unit
Channel to ambient
∗ Mounted on a ceramic board
∗
Each lead has same dimensions
(1) Gate
(2) Source
(3) Drain
TSMT3
Abbreviated symbol : XF
zDimension
s
(
Unit : mm
)
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(3)
(1)
(2)
zE
q
uivalent circuit
RUR040N02
Transistors
2/4
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
−−±10 µAV
GS
=±10V, V
DS
=0V
V
DD
10V
20 −−VI
D
=
1mA, V
GS
=0V
−−1µAV
DS
=
20V, V
GS
=0V
0.3 −1.3 V V
DS
=
10V, I
D
=
1mA
−25 35 I
D
=
4.0A, V
GS
=
4.5V
−33 46 mΩ
mΩ
mΩ
I
D
=
4.0A, V
GS
=
2.5V
−42 59 I
D
=
2.0A, V
GS
=
1.8V
mΩ− 55 110 I
D
=
0.8A, V
GS
=
1.5V
5.0 −−SV
DS
=
10V, I
D
=
4.0A
−680 −pF V
DS
=
10V
−150
90 −pF V
GS
=0V
−10 −pF f=1MHz
−30 −ns
−50 −ns
−60 −ns
−
8
−ns
−
1.8
−nC
−
1.3
−nC V
GS
=
4.5V
−−
nC
I
D
=
4.0A,
V
DD
10V
I
D
=
2.0A,
V
GS
=
4.5V
R
L
5Ω, R
G
=10Ω
R
L
2.5Ω, R
G
=10Ω
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
zBody diode characteristics (Source-drain) (Ta =25°C)
VSD −−1.2 VForward voltage IS=
0.8A, VGS=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗Pulsed
∗
RUR040N02
Transistors
3/4
zElectrical characteristic curves
0.001
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
DRAIN CURRENT : ID (A)
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
V
GS
=4.5V
Pulsed
0.01 10.1 10
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
DRAIN CURRENT : I
D
(A)
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
V
GS
=2.5V
Pulsed
0.01 10.1 10
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
DRAIN CURRENT : I
D
(A)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
V
GS
=1.8V
Pulsed
0.01 10.1 10
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
DRAIN CURRENT : I
D
(A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=1.5V
Pulsed
0.01 10.1 10
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
DRAIN CURRENT : I
D
(A)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
Ta=25°C
Pulsed
0.01 10.1 10
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
DRAIN CURRENT : I
D
(A)
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
V
GS
=1.5V
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
Ta=25°C
Pulsed
0
0510
20
40
60
80
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.7 Static Drain-Source
On-State Resistance
vs. Gate-Source Voletage
I
D
=4.0A
I
D
=2.0A
0.01
1
10
0.1
1.00.50.0 1.5
SOURCE CURRENT : I
S
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.8 Source Current
vs. Source-Drain Voltage
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
Ta=25°C
f=1MHz
V
GS
=0V
C
iss
C
oss
C
rss
0.01 10.1 10 100
10
100
10000
1000
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.9 Typical Capacitance
vs. Drain-Source Voltage
RUR040N02
Transistors
4/4
0.01
110.1 10
10
100
1000
10000
SWITCHING TIME : t (ns)
DRAIN CURRENT : I
D
(A)
Fig.10 Switching Characteristics
Ta=25°C
V
DD
=10V
V
GS
=4.5V
R
G
=10Ω
Pulsed
t
f
t
r
t
d(off)
t
d(on)
0
0
2
4
6
1234567891011
GATE-SOURCE VOLTAGE : V
GS
(V)
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Dynamic Input Characteristics
Ta=25°C
V
DD
=10V
I
D
=4.0V
R
G
=10Ω
Pulsed
0.1
10
100
1
10.10.01 10
FORWARD TRANSFER ADMITTANCE
Yfs
(S)
DRAIN CURRENT : I
D
(A)
Fig.12 Forward Transfer
Admittance vs. Drain Current
VDS=10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
zMeasurement circuits
Fig.13 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.14 Switching Time Waveforms
90% 50%50%
10% 10%
90% 90%
10%
VGS
VDS
ton toff
tr
td(on) tr
td(off)
Pulse Width
Fig.15 Gate Charge Test Circuit
V
GS
I
G (Const.)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.16 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
www.rohm.com
Copyright © 2008 ROHM CO.,LTD.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix
