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74ABT245
Absolute Maximum Ratings(Note 1) Recommended Operating
Conditions
Note 1: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: Eith er v oltage lim it or c urrent limit is sufficie nt to protect inputs
DC Electrical Characteristics
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias −55°C to +150°C
VCC Pin Potential to Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State −0.5V to 5.5V
in the HIGH State −0.5V to VCC
Current Applied to Output
in LOW State (Max) twice the rated IOL (mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature −40°C to +85°C
Supply Voltage +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Symbol Parameter Min Typ Max Units VCC Conditions
VIH Input HIGH Voltage 2.0 V Recognized HIGH Signal
VIL Input LOW Voltage 0.8 V Recognized LOW Signal
VCD Input Clamp Diode Voltage −1.2 V Min IIN = −18 mA (OE, T/R)
VOH Output HIGH Voltage 2.5 V Min IOH = −3 mA (An, Bn)
2.0 V Min IOH = −32 mA (An, Bn)
VOL Output LOW Voltage 0.55 V Min IOL = 64 mA (An, Bn)
IIH Input HIGH Current 1 µAMax
VIN = 2.7V (OE, T/R)
1VIN = VCC (O E, T/R)
IBVI Input HIGH Current Breakdown Test 7 µAMax
VIN = 7.0V (OE, T/R)
IBVIT Input HIGH Current Breakdown Test (I/O) 100 µAMaxV
IN = 5.5 V (An, Bn)
IIL Input LOW Current −1µAMax
VIN = 0.5V (OE, T/R)
−1VIN = 0.0V (OE, T/R)
VID Input Leakage Test 4.75 V 0.0 IID = 1.9 µA (OE, T/R)
All Other Pins Grounded
IIH + IOZH Output Leakage Current 10 µA0 − 5.5V VOUT = 2.7V (An, Bn); OE = 2.0V
IIL + I OZL Output Leakage Current −10 µA0 − 5.5V VOUT = 0.5V (An, Bn); OE = 2.0V
IOS Output Short-Circuit Current −100 −275 mA Max VOUT = 0.0V (An, Bn)
ICEX Output HIGH Leakage Current 50 µAMaxV
OUT = V CC (An, Bn)
IZZ Bus Drainage Test 100 µA0.0V
OUT = 5.5V (An, Bn);
All Others GND
ICCH Power Supply Current 50 µA Max All Outputs HIGH
ICCL Power Supply Current 30 mA Max All Outputs LOW
ICCZ Power Supply Current 50 µAMax
OE = VCC, T/R = GND or VCC;
All Other GND or VCC
ICCT Additional Outputs Enabled 2.5 mA VI = V CC − 2.1V
I CC/Input Outputs 3-STATE 2.5 mA Max OE, T/R VI = VCC − 2.1V
Outputs 3-STATE 50 µA Data Input VI = VCC − 2.1V
All Others at VCC or GND.
ICCD Dynamic ICC No Load 0.1 mA/ Max Outputs Open
MHz OE = GND, T/R = GND or VCC
One Bit Toggling, 50% Duty Cycle