Features
l Through Hole Package
l 150oC Junction Temperature
Mechanical Data
l Case: TO-92, Molded Plastic
l Marking:
MPSA42 --------- A42
MPSA43 --------- A43
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage MPSA42
MPSA43 VCEO
300
200 V
Collector-Base Voltage MPSA42
MPSA43 VCBO
300
200 V
Emitter-Base Voltage MPSA42
MPSA43 VEBO 5.0 V
Collector Current(DC) I
C
300 mA
Power Dissipation@TA=25oC
Pd625
5.0
mW
mW/oC
Power Dissipation@TC=25oC
Pd1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200 oC/W
Thermal Resistance, Junction to
Case 83.3 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
MPSA42
THRU
MPSA43
NPN Silicon High
Voltage Transistor
625mW
Pin Configuration
Bottom View CB E
TO-92
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.175 .185 4.45 4.70
B.175 .185 4.46 4.70
C.500 --- 12.7 ---
D.016 .020 0.41 0.63
E.135 .145 3.43 3.68
G.095 .105 2.42 2.67
A
E
B
C
D
G
DIMENSIONS
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) MPSA42
MPSA43
V(BR)CEO 300
200 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) MPSA42
MPSA43
V(BR)CBO 300
200 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0) MPSA42
(VCB = 160 Vdc, IE = 0) MPSA43
ICBO —
—0.25
0.1
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)MPSA42
(VEB = 4.0 Vdc, IC = 0) MPSA43
IEBO —
—0.25
0.1
µAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
hFE 25
80
25
—250
—
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) MPSA42
MPSA43
VCE(sat) —
—0.5
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) —0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz) fT50 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MPSA42
MPSA43
Ccb —
—3.0
4.0
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
MCC
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MPSA42 thru MPSA43
C, CAPACIT ANCE (pF)
Figure 1. DC Current Gain
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA) 10070503020107.05.03.02.0
80
70
50
30
20
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
f , CURRENT–GAIN — BANDWIDTH (MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain – Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0 Ccb @ 1MHz
60
40
VBE(on) @ 25
°
C, VCE = 10 V
VCE(sat) @ 25
°
C, IC/IB = 10
VBE(sat) @ 25
°
C, IC/IB = 10
VCE(sat) @ 125
°
C, IC/IB = 10
VCE(sat) @ –55
°
C, IC/IB = 10
VBE(sat) @ 125
°
C, IC/IB = 10
VBE(sat) @ –55
°
C, IC/IB = 10
VBE(on) @ 125
°
C, VCE = 10 V
VBE(on) @ –55
°
C, VCE = 10 V
Figure 4. ”ON” Voltages
IC, COLLECTOR CURRENT (mA)
120
0.1 1.0 10
100
80
60
0
hFE, DC CURRENT GAIN
TJ = +125
°
C
25
°
C
–55
°
C
VCE = 10 Vdc
100
20
40
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MCC
MPSA42 thru MPSA43
