IRLML2803TRPBF - International Rectifier

IRLML2803PbF

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

VDSS = 30V

RDS(on) = 0.25Ω

HEXFET® Power MOSFET

Description

12/14/11

lGeneration V Technology

lUltra Low On-Resistance

lN-Channel MOSFET

lSOT-23 Footprint

lLow Profile (<1.1mm)

lAvailable in Tape and Reel

lFast Switching

lLead-Free

Absolute Maximum Ratings

Parameter

Units

I

D

@ T

A

= 25°C

Continuous Drain Current, VGS @ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, VGS @ 10V

I

DM Pulsed Drain Current

c

P

D

@T

A

= 25°C

Power Dissipation

mW

Linear Derating Factor mW/°C

V

GS Gate-to-Source Voltage

V

E

AS Single Pulse Avalanche Energy

g

mJ

dv/dt Peak diode Recovery dv/dt

d

V/ns

T

J ,

T

STG Junction and Storage Temperature Range °C

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJA Maximum Junction-to-Ambient

f

–––

230

°C/W

3.9

A

5.0

540

4.3

±20

Max.

1.2

0.93

7.3

-55 to + 150

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D

S

G

3

1

2

Micro3™

PD - 94974B

IRLML2803PbF

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30   V VGS = 0V, ID = 250µA

ΔV(BR)DSS/ΔT

JBreakdown Voltage Temp. Coefficient  0.029  V/°C Reference to 25°C, ID = 1mA

  0.25 VGS = 10V, ID = 0.91A 

  0.40 VGS = 4.5V, ID = 0.46A 

VGS(th) Gate Threshold Voltage 1.0   V VDS = VGS, ID = 250µA

gfs Forward Transconductance 0.87   S VDS = 10V, ID = 0.46A

  1.0 VDS = 24V, VGS = 0V

  25 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage   -100 VGS = -20V

Gate-to-Source Reverse Leakage   100 VGS = 20V

QgTotal Gate Charge  3.3 5.0 ID = 0.91A

Qgs Gate-to-Source Charge  0.48 0.72 nC VDS = 24V

Qgd Gate-to-Drain ("Miller") Charge  1.1 1.7 VGS = 10V, See Fig. 6 and 9 

td(on) Turn-On Delay Time  3.9  VDD = 15V

trRise Time  4.0  ID = 0.91A

td(off) Turn-Off Delay Time  9.0  RG = 6.2Ω

tfFall Time  1.7  RD = 16Ω, See Fig. 10 

Ciss Input Capacitance  85  VGS = 0V

Coss Output Capacitance  34  pF VDS = 25V

Crss Reverse Transfer Capacitance  15   = 1.0MHz, See Fig. 5

Ω

µA

nA

ns

IGSS

IDSS Drain-to-Source Leakage Current

RDS(on) Static Drain-to-Source On-Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage   1.2 V TJ = 25°C, IS = 0.91A, VGS = 0V 

trr Reverse Recovery Time  26 40 ns TJ = 25°C, IF = 0.91A

Qrr Reverse RecoveryCharge  22 32 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics

A

  7.3

  0.54

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V

(BR)DSS,

TJ ≤ 150°C

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.

 Surface mounted on FR-4 board, t ≤ 5sec.

IRLML2803PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

1

10

0.1 1 10

20μs PULSE WIDTH

T = 25°C

A

J

DS

V , Drain-to-Source Voltage (V)

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

D

I , Drain-to-Source Current (A)

0.1

1

10

0.1 1 10

A

DS

V , Drain-to-Source Voltage (V)

D

I , Drain-to-Source Current (A)

20μs PULSE WIDTH

T = 150°C

J

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

V = 10V

GS

A

I = 0.91A

D

0.1

1

10

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

T = 25°C

T = 150°C

J

GS

V , Gate-to-Source Voltage (V)

D

I , Drain-to-Source Current (A)

A

V = 10V

20μs PULSE WIDTH

DS

IRLML2803PbF

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

20

40

60

80

100

120

140

160

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0.0 1.0 2.0 3.0 4.0 5.0

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 9

I = 0.91A

V = 24V

V = 15V

D

DS

0.1

1

10

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

T = 150°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

A

0.1

1

10

100

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

T = 25°C

T = 150°C

Single Pulse

1ms

10ms

A

J

100μs

10μs

IRLML2803PbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

VDS

90%

10%

VGS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

Fig 9a. Basic Gate Charge Waveform

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Q

G

Q

GS

Q

GD

V

G

Charge

10V

Fig 9b. Gate Charge Test Circuit

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLML2803PbF

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Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = P. W .

Period

* V

GS = 5V for Logic Level Devices

*

+

-

+

-







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

VGS

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

0

2

4

6

8

10

12

14

16

18

EAS, Single Pulse Avalanche Energy (mJ)

I D

TOP 0.57A

0.75A

BOTTOM 0.90A

IRLML2803PbF

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Micro3 / SOT-23 Package Marking

A YW LC

PART NUMBER

Y = YEAR

W = WEEK

LOT

CODE

HALOGEN FREE

INDICATOR

PART NUMBER CODE REFERENCE:

A = IRLML2402

B =IRLML2803

C = IRLML2402

D = IRLML5103

E = IRLML6402

F = IRLML6401

G = IRLML2502

H = IRLML5203

Note: A line above the work week

(as shown here) indicates Lead-free

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

A2001 A27

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W = (27-52) IF PRECEDED BY A LETTER

Y

82008

32003

12001

YEAR

2002 2

52005

2004 4

2007

2006

7

6

2010 0

2009 9

YEAR Y

C03

WOR K

WE E K

01

02

A

W

B

04 D

24

26

25

X

Z

Y

WOR K

WE E K W

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009 J

Y51

29

28

30

C

B

D

50 X

52 Z

0.972

1.900

Recommended Footprint

0.802

0.950 2.742

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

e

E1

E

D

A

B

0.15 [0.006]

e1

12

3

MCBA

5

6

5

3X L

c

b

A1 3X

A

A2

ABC

M

0.20 [0.008]

0.10 [0.004] C

C

L2

H4L1

7

0.89 1.12

SYMBOL MAXMIN

A1

b

0.01 0.10

c

0.30 0.50

D

0.08 0.20

E

2.80 3.04

E1

2.10 2.64

e

1.20 1.40

A

0.95 BSC

L 0.40 0.60

08

MILLIMETERS

A2 0.88 1.02

e1 1.90 BSC

REF0.54L1

BSC0.25L2



BSC



REF

%6&



INCHES

80



%6&













0.0004

MIN MAX



DIMENSIONS

NOTES:

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

IRLML2803PbF

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Tape & Reel Information

SOT-23

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

1.6 ( .062 )

1.5 ( .060 ) 1.85 ( .072 )

1.65 ( .065 )

3.55 ( .139 )

3.45 ( .136 )

1.1 ( .043 )

0.9 ( .036 )

4.1 ( .161 )

3.9 ( .154 ) 0.35 ( .013 )

0.25 ( .010 )

8.3 ( .326 )

7.9 ( .312 )

1.32 ( .051 )

1.12 ( .045 )

9.90 ( .390 )

8.40 ( .331 )

178.00

( 7.008 )

MAX.

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/2011

Note: For the most current drawing please refer to IR website at http://www.irf.com/package