PD - 94974B IRLML2803PbF l l l l l l l l HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = 30V 3 D S RDS(on) = 0.25 2 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro3TM Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ ,TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak diode Recovery dv/dt Junction and Storage Temperature Range c d g Units 1.2 0.93 7.3 540 mW 4.3 20 3.9 mW/C V mJ 5.0 -55 to + 150 V/ns C A Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient f Typ. Max. Units --- 230 C/W 1 12/14/11 IRLML2803PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 0.87 Typ. 0.029 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 10V, ID = 0.91A 0.40 VGS = 4.5V, ID = 0.46A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.46A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.0 ID = 0.91A 0.72 nC VDS = 24V 1.7 VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 0.91A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 0.54 7.3 26 22 1.2 40 32 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 0.91A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C www.irf.com Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. Limited by TJmax, starting TJ = 25C, L = 9.4mH, RG = 25, IAS = 0.9A. 2 IRLML2803PbF 10 10 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 3.0V 20s PULSE WIDTH TJ = 25C A 0.1 0.1 1 1 3.0V 20s PULSE WIDTH TJ = 150C A 0.1 10 0.1 1 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 TJ = 25C TJ = 150C 1 0.1 3.0 V DS = 10V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 5.5 6.0 A 6.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 V DS, Drain-to-Source Voltage (V) I D = 0.91A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML2803PbF 160 120 V GS , Gate-to-Source Voltage (V) 140 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 12 Coss 80 60 Crss 40 V DS = 24V V DS = 15V 16 Ciss 100 I D = 0.91A 20 0 1 10 100 8 4 0 0.0 A VDS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 A 5.0 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 9 TJ = 150C 1 TJ = 25C 10 10s 100s 1 1ms VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 1.4 TA = 25C TJ = 150C Single Pulse 0.1 1 10ms 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 IRLML2803PbF 10V QGS RD V DS QG VGS QGD D.U.T. RG VG + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50K 90% .2F 12V .3F + V - DS D.U.T. 10% VGS VGS 3mA td(on) IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML2803PbF 15V EAS, Single Pulse Avalanche Energy (mJ) D.U.T RG VGS 20V DRIVER L VDS 18 + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 0.57A 0.75A BOTTOM 0.90A 16 TOP 14 12 10 8 6 4 2 0 25 50 75 100 125 150 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs www.irf.com 6 IRLML2803PbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) A 6 DIMENSIONS 5 D SYMBOL 3 6 E E1 1 B 5 A A1 A2 b c D E E1 e e1 L L1 L2 0.15 [0.006] M C B A 2 e e1 A A2 H C 4 L1 c 0.10 [0.004] C A1 L2 3X b 3X L 0.20 [0.008] M C B A 7 Recommended Footprint 0.950 INCHES MIN MAX MIN MAX 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 %6& %6& 0.0004 0 REF BSC 8 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 0.972 0.802 MILLIMETERS 2.742 1.900 Micro3 (SOT-23 / TO-236AB) Part Marking Information Micro3 / SOT-23 Package Marking W = (1-26) IF PRECEDED B Y LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER A YW LC HALOGEN FREE INDICATOR LOT CODE PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED B Y A L ETT ER YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com 7 IRLML2803PbF Tape & Reel Information SOT-23 Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/2011 www.irf.com 8