BC 320, A, B BC 321, A, B BC 322, B amplifiers or driver stages. @ Complements to BC317, BC318, and BC319. PNP SILICON ANNULAR TRANSISTORS @ BC320 is intended for use in driver stages of audio amplifiers. @ BC321 is intended for low voltage applications such as audio @ BC322 is intended for low noise input stages in audio equipment. MAXIMUM RATINGS PNP SILICON AUDIO TRANSISTORS Ratings Symbol | Type Value Unit BC320 45 Cotlector-Emitter Voltage Vceo BC321 30 Vde BC322 20 BC320 50 Collector-Base Voltage Vop BC321 40 Vde BC322 30 BC320 6 Emitter-Base Voltage Veg BC321 5 Vde BC322 5 Collector-Current Continuous lo 150 mAdc Peak 300 mA Total Device Dissipation at T Am 25 C Py 310 mw Junction Operating Temperature T 3 150 c Storage Temperature Range Tetq 5 to + 150 C THERMAL CHARACTERISTICS [ Characteristic Symbol Max Unit | Thermal Resistance, Junction to Ambient Oya 0.404 C/mW 485 4.70 Leads to fit into 0.41 12.70 min. 0.48 OIA HOLE (TYP) iu 140 1a Vs 0.08 5 (TYP) - 0.33 - 216 , 44 Ta 1.40 CASE 291) (70.92) All dimensions in MillimetersBC320, A, B BC321, A, B BC322, B ELECTRICAL CHARACTERISTICS Ts = 25C unless otherwise noted} Characteristics & Conditions Symboi Type Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage BV, EO BC320 45 Vde BC321 30 lq = ima In =0 BC322 20 Coliector-Emitter Breakdown Voltage BVoEs BC320 50 Vde IQ = 100pA, Veg =O BC321 40 BC322 30 Collector-Base Breakdown Voltage BVago BC320 50 Vdc BC321 40 1Q = 100pA, =o BC322 30 Emitter-Base Breakdown Voltage BVeRo BC320 6 Vde BC321 5 I, = 100pA, n=O BC322 5 Collector Cutoff Current Vog = 20V. =o ogo 30 nAdc Base-Emitter On Voltage lo = 2mA, Vee =5V VBE(on) 57 68 72 Vde I = 10mA, Vog = 5V T7 Collector-Emitter Saturation Voltage le = 100mA, 1p =5mA VCE (sat) 35 50 Vde Base-Emitter Saturation Voltage ho =10mA, Ip =0.5mA VBE (sat) 77 Vde {= 100mA, I = 5mA .99 DC Current Gain Fee BC320A _ 50 _ 1 = 10nA, Vog = 5V BC321A BC320B BC321B 40 100 _ BC322B le = 2mA, Vee = 5V BC320A 140 180 220 BC321A BC3208 BC321B 200 290 450 BC322B Spot Noise Figure NF BC320 2 6 de lo = 200A, Vee =5V BC321 2 6 Re =2KQ, f=1KHz, B.W.= 200 Hz BC322 1.5 4BC320, A, B BC321, A, B BC322, B ELECTRICAL CHARACTERISTICS (T, = 25 C unless otherwise noted) Characteristics & Conditions Symbol! Type Min. Typ. Max. Unit Wide Band Noise Figure NF dB le = 200A, Vee = BV BC322 1.8 4 Rg = 2KQ, =30Hz to 15KHz Output Capacitance Veg = 10V, le =0 cop 3 4 pF f=1MHz Input Capacitance Veg = O.5V, G0 Cy 16 pF f= 1MHz Current-Gain Bandwidth Product le = 10mA, Vee =5V fy 250 MHz Voltage Feedback Ratio 1 = = 74 lo 2mA, Voge 5V he 2.0 X10 f= 1KHz Input Impedance lo =2mA, Vee = 56V his 16 kohms f=1KHz Output Admittance IQ 2mA, Vee = 5V Noe 30 pmhos f= 1KHz Small Signal Current Gain h BC320A - fe 125 180 260 Io = 2mA, Vor = BV BC321A f = 1KHz BC320B BC3218 240 290 500 BC322B | FIGURE 1 CURRENT GAIN FIGURE 2 ~ "ON" VOLTAGE 10 Vop2-5V NOE sat Ty =25 Ty =125C Hep, NORMALIZED CURRENT GAIN VGLTAGE ( VOLTS) 2 1 0 100 1000 05 #1 5 10 50 100 Ig ,COLLECTOR CURRENT (mA) Ic . COLLECTOR CURRENT (mA) 2BC320, A, B BC321, A, B BC322, B FIGURE 3 COLLECTOR CHARACTERISTICS FIGURE 4~ COLLECTOR CHARACTERISTICS g 40 8 g 0 z? -~ Ip = 120MA & _ 30 _ g z = ig = SOMA e 5 S 0 . > 4 = z E , a Ip = 40uA a 8 10 8 2 2 2 4 3 4 Ip=1HA 0 2 4 6 8 0 2 4 6 BW 2 2 24 0 05 1 Vog . COLLECTOR-EMITTER VOLTAGE (VOLTS) Veg. COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 5~ CONSTANT NARROW BAND NOISE CURVES 100 100 g 3 = o = a) ~ w 4 ws Z 2 a % uo wn = rd a 1 3 1 o = oe oA 01 0.01 0. 1 10 a01 a 1 10 Ig. COLLECTOR CURRENT (mA) ig. COLLECTOR CURRENT = {mA) FIGURE 7. CONSTANT NARROW BAND FIGURE 8. NOISE FIGURE VERSUS NOISE CURVES GENERATOR RESISTANCE RG 100 _ Vee =6V F=1KHz = Ta =25C Vee = 6V a? - 2 3 a ivr = s 8 / 4 3 . 3 = a 001 Q) 1 10 l- COLLECTOR CURRENT (mA) ou 1 10 100 Rg GENERATOR RESISTANCE (KOHMS)