GBU8A ~ GBU8M
Glass Passivated
Single-Phase Bridge Rectifiers
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* Glass passivated chi p junct ion
* Ideal for printed c irc uit boar d
* Pl ast ic mater ial has Underwri ters Laboratory
Flammability Classification 94V-0
* Reliable low cost construction utilizing molded
plast ic t ec hnique
* Pb / RoHS Free
MECHANICAL DATA :
* Case: Molded plastic, GBU
* Epoxy: UL 94V - O rate flame ret ar dant
* Ter minals: Leads solder able per MIL-STD-202,
method 208 guaranteed
* Mount ing posit ion: A ny
* Weight: 0.15ounce, 4.0gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin
g
a t 25 °C ambient tem
p
erature unless otherwise s
p
e cified. Sin
g
le
p
hase , half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL GBU
8
A
GBU
8
B
GBU
8
D
GBU
8
G
GBU
8
J
GBU
8
K
GBU
8
M
UNIT
Maximum Recurr ent Peak Rever se Voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Volt age V
DC
50 100 200 400 600 800 1000 V
Maximum Average Forward Output Cur r ent Tc=100 °C
(
I
F(AV)
8.0 A
Peak Forward Surge Current, 8. 3ms Singl e half si ne-
wave Superi mposed on rated load (JEDEC Method)
Maximum For ward Vol t age at I
F
= 8 A V
F
1.1 V
Maxim um DC Reverse Current Ta = 25 °CI
R
5.0
at Rated DC Blocking Volt age Ta = 125 °CI
R(H)
500
Typical Junct ion capacit ance per element (Note3) C
J
225 125 pF
Typical Thermal Resistance (Note 4) R
Ѳ
JA
21 °C/W
Typical Thermal Resistance (Note 4) R
Ѳ
JC
2.2 °C/W
Operati ng Junct ion and Storage Temperature Range T
J
, T
STG
- 55 t o + 150 °C
Notes :
(1) Units case mounte d on 3.2 x 3.2 x 0.12" thick (8.2 x 8.2 x 0.3cm) Al pla te he atsink
(2) Re co mmended mounting position is to bolt down on heatsink with silicone thermal compound for maximum he at transfe r with #6 screws
(3) Measured at 1 MHz and applied reverse voltage of 4.0 VDC
(4) Units mounte d in free air, no heatsink on P.C.B., 0.5 x 0.5” (12 x 12mm) copper pads, 0.375" lead length
Page 1 of 2 Rev. 03 : May 17, 2011
RATING
I
FSM
200 A
μA
Dim e ns ions in inc he s a nd ( m illim e ter )
GBU
0.880 (22.30)
0.860 (21.80)
0.050 (1.27)
0.040 (1.02)
~+
~
0.210(5.33)
0.190(4.83)
0.210(5.33)
0.190(4.83) 0.210(5.33)
0.190(4.83)
0.709 (18.00)
0.689 (17.50)
0.108 (2.75)
0.089 (2.25)
0.093 (2.35)
0.077 (1.95)
R 7.6
3.2 x 45 °
0.085 (2.16)
0.065 (1.65)
0.311 (7.90)
0.291 (7.40)
0.161 (4.10)
0.138 (3.50)
0.039(1.00)
0.030(0.76)
0.022(0.56)
0.018(0.46)
7o
7o
0.740 (18.80)
0.720 (18.30)
0.140 (3.56)
0.130 (3.30)
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( GBU8A - GBU8M )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARA CTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER LEG PER LEG
0.4 06 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
Page 2 of 2 Rev. 03 : May 17, 2011
60 Hz, Resistive or inductive load.
Heatsink mounted on
3.2 x 3.2 x 0.12" thick
(8.2 x 8.2 x 0.3cm) Al plate
6.0
4.0
2.0
10
100
150
0
250
0
100
50
0.1
10
0.01
1.0
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD OUTPUT
CURRENT, AMPERE S
INSTANTANEOUS FORWARD
CURRENT, (A)
TJ= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
8.3 ms Single Half Sine Wav e
(JEDEC METH OD)
200
PERCENT OF RATED REVERSE
VOLTAGE, (%)
INSTANTANEOUS REVERSE
CURRENT, (µA)
8.0
TJ= 150 °C
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com