MMPQ2222A
SURFACE MOUNT
NPN SILICON
QUAD TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ2222A,
consisting of four transistors and available in the
SOIC-16 surface mount package, is designed for
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
SOIC-16 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance (Total Package) ΘJA 125 °C/W
Thermal Resistance (Each Transistor) ΘJA 240 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEV V
CE=60V, VEB=3.0V 10 nA
ICBO V
CB=60V 10 nA
ICBO V
CB=60V, TA=125°C 10 μA
IEBO V
BE=3.0V 10 nA
BVCBO I
C=10μA 75 V
BVCEO I
C=10mA 40 V
BVEBO I
E=10μA 6.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.3 V
VCE(SAT) I
C=500mA, IB=50mA 1.0 V
VBE(SAT) I
C=150mA, IB=15mA 0.6 1.2 V
VBE(SAT) IC=500mA, IB=50mA 2.0 V
hFE V
CE=10V, IC=0.1mA 35
hFE V
CE=10V, IC=1.0mA 50
hFE V
CE=10V, IC=10mA 75
hFE V
CE=10V, IC=10mA, TA=-55°C 35
hFE V
CE=10V, IC=150mA 100 300
hFE V
CE=1.0V, IC=150mA 50
hFE V
CE=10V, IC=500mA 40
fT V
CE=20V, IC=20mA, f=100MHz 300 MHz
Cib V
EB=0.5V, f=100kHz 20 pF
Cob V
CB=10V, f=100kHz 4.0 pF
NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 2.0 dB
R2 (1-March 2010)
www.centralsemi.com
MMPQ2222A
SURFACE MOUNT
NPN SILICON
QUAD TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP UNITS
td V
CC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 8.0 ns
tr V
CC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 20 ns
ts V
CC=30V, IC=150mA, IB1=IB2=15mA 180 ns
tf V
CC=30V, IC=150mA, IB1=IB2=15mA 40 ns
SOIC-16 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
MARKING: FULL PART NUMBER
www.centralsemi.com
R2 (1-March 2010)