MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER SOIC-16 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance (Total Package) Thermal Resistance (Each Transistor) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA JA 75 40 6.0 500 1.0 -55 to +150 125 240 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=60V, VEB=3.0V ICBO VCB=60V ICBO VCB=60V, TA=125C IEBO VBE=3.0V BVCBO IC=10A 75 BVCEO IC=10mA 40 BVEBO IE=10A 6.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=10mA, TA=-55C 35 hFE VCE=10V, IC=150mA 100 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 Cib VEB=0.5V, f=100kHz 20 Cob VCB=10V, f=100kHz 4.0 NF VCE=10V, IC=100A, RS=1.0k, f=1.0kHz MAX 10 10 10 10 0.3 1.0 1.2 2.0 UNITS V V V mA W C C/W C/W UNITS nA nA A nA V V V V V V V 300 2.0 MHz pF pF dB R2 (1-March 2010) MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS TYP td VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 8.0 tr VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 20 ts VCC=30V, IC=150mA, IB1=IB2=15mA 180 tf VCC=30V, IC=150mA, IB1=IB2=15mA 40 UNITS ns ns ns ns SOIC-16 CASE - MECHANICAL OUTLINE PIN CONFIGURATION MARKING: FULL PART NUMBER R2 (1-March 2010) w w w. c e n t r a l s e m i . c o m