SEMICONDUCTOR TIP32CF TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.700.30 D 0.85 MAX E 3.200.20 F 3.000.30 12.30 MAX G 0.75 MAX R H 13.600.50 J K 3.90 MAX L 1.20 1.30 M V N 2.54 4.500.20 O P 6.80 2.600.20 Q R 10 H S 25 5 T U 0.5 V 2.600.15 P F U *Complementary to TIP31CF. S G B E MAXIMUM RATING (Ta=25) SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse ICP -5 IB -1 A 2 W 25 W Tj 150 Tstg -55150 L K CHARACTERISTIC T L Base Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range PC D D N N T T A 1 2 3 Q O Collector Current J M 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.3 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -200 A Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -1 mA DC Current Gain hFE VCE=-4V, IC=-1A 25 - - VCE=-4V, IC=-3A 10 - 50 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-375mA - - -1.2 V Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-3A - - -1.8 V 3.0 - - MHz fT Transition Frequency 2002. 6. 14 Revision No : 0 VCE=-10V, IC=-500mA f=1MHz 1/2 TIP32CF V CE(sat) ,VBE(sat) - I C 1k 500 300 VCE =-4V SATURATION VOLTAGE V CE(sat) ,VBE(sat) (mV) DC CURRENT GAIN hFE h FE - I C 100 50 30 10 5 3 -3 -10 -30 -100 -300 -1k VBE(sat) -100 -50 -30 VCE(sat) -1 -3 -10 -30 -100 -300 -1k -3k -10k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) P C - Ta SAFE OPERATING AREA -10 25 20 15 10 5 I C MAX.(PULSE) * -5 I C MAX. (CONTIN -UOUS) -3 DC -1 -0.5 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) Revision No : 0 200 AT * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.3 -0.1 0 OP ER * -4 -10 -30 s 0 10 COLLECTOR CURRENT I C (A) 30 2002. 6. 14 -1k -500 -300 -10 -3k -10k I C /I B =10 s 1m s 5m COLLECTOR POWER DISSIPATION P C (W) 1 -1 -10k -5k -3k * * IN G -50 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2