GENERAL C 0.181 (4.6) eH SEMICONDUCTOR TO-226AA (TO-92) 0.142 (3.6) | min.0.492 (12.5) 0.181 (4.6) B Bottom View Dimensions in inches and (millimeters) BC546 thru BC549 Small Signal Transistors (NPN) Features * NPN Silicon Epitaxial Planar Transistors * These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be sup- plied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types the PNP transistors BC556...BC559 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18. Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.189 Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Maximum Rati ngs & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit BC546 80 Collector-Base Voltage BC547 VcBo 50 v BC548, BC549 30 BC546 80 Callector-Emitter Voltage BC547 VcES 50 v BC548, BC549 30 BC546 65 Collector-Emitter Voltage BC547 VCEO 45 v BC548, BC549 30 . BC546, BC547 6 Emitter-Base Voltage BC548, BC549 VEBO 5 Vv Collector Current Ic 100 mA Peak Collector Current Icm 200 mA Peak Base Current IBM 200 mA Peak Emitter Current -lEM 200 mA Power Dissipation at Tamb = 25C Pot 500" mW Thermal Resistance Junction to Ambient Air Reva 250") C/W Junction Temperature Tj 150 C Storage Temperature Range Ts 65 to +150 me) Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 55 3/28/00 cl pi =} ar 2 ez) 7 a) i - J ao o 2 [> =){> GENERAL . 6 SEMICONDUCTOR BC546 thru BC549 Small Signal Transistors (NPN) Electrical Characteristics (14 - 25c uniess otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Current gain group A _ _ _ 220 Small Signal Current Gain hte Vee PM Kee me _ 330 _ Cc _ 600 _ Current gain group A _ _ 1.6 27 4.5 Input Impedance B| hie Vee = PM Kae mA, 3.2 45 8.5 kQ Cc 6 8.7 15 Current gain group A Vee = - _ 18 30 Output Admittance hoe CES ; op 2mA, _ 30 60 aS Cc _ 60 110 Current gain group A Voce = - _ 1.5107 _ Reverse Voltage Transfer Ratio hre CE a Ko 2 mA, _ 2104 c 310 _ Current gain group A _ 90 _ VceE=5V,Ic=10 nA _ 150 _ Cc _ 270 _ Current gain group A 110 180 220 DC Current Gain hee Vce=5V,Ilc=2mA 200 290 450 _ Cc 420 500 800 Current gain group A _ 420 B Vce =V, Ic = 100 mA _ 200 400 ~ . Ic = 10 mA, IB=0.5 MA _ 80 200 Collector Saturation Voltage VCEsat Ic = 100 mA, Ip =5 mA _ 200 600 mv . Ic = 10 mA, IB =0.5 mA 700 _ Base Saturation Voltage VBEsat Ic = 100 mA, Ia=5mA _ 900 _ mv . VcE=5V,Ilo=2mA 580 660 700 Base-Emitter Voltage VBE VcE=5V.Io=10mA _ _ 720 mV BC546 Voce = 80 V _ 0.2 15 nA A BC547 VceE=50V _ 0.2 15 nA coterie emiter BC548, BCS49| Ices Vce = 30V _ 0.2 15 nA BC546 VcE = 80 V, Tj = 125C _ _ 4 uA BC547 Vce = 50 V, Tj = 125C _ _ 4 pA BC548, BC549 Vc = 30 V, Tj = 125C _ 4 LA . . VceE=5V, lc =10 mA, _ _ Gain-Bandwidth Product ft f= 100 MHz 300 MHz Collector-Base Capacitance CcBo Vee = 10V, f= 1 MHz _ 3.5 6 pF Emitter-Base Capacitance CeBo Ves = 0.5 V, f= 1 MHz _ _ pF Noise Figure BC546, BC547 Voce =5V, Ic = 200 pA, _ 10 BC548 Re = 2 kQ, f= 1 kHz, _ 12 4 BC549 F Af = 200 Hz , dB VceE = 5 V, Ic = 200 uA we, _ 4 BC549 RAG=2kQ, f = 30...15000 Hz ' 4 56GENERAL E> SeiconDUCTOR BC546 thru BC549 Small Signal Transistors (NPN) a) - Q od 2 a = 4) i ad = o a [- =) Ratings and Characteristic Curves (Ta = 25C unless otherwise noted) - Admissible power dissipation Pulse thermal resistance versus temperature versus pulse duration Valid provided that leads are kept at ambient Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case temperature at a distance of 2 mm from case mW BC546...BC549 CW BC546...BC549 0 100 200C Tam DC current gain Collector-base cutoff current versus collector current versus ambient temperature BC546...BC549 nA BC546...BC549 10 yw Oo eo fee 107 5 4 a 2 10 Test voltage V.45: 5 equal to the given 3 maximum value Vorg 2 typical -- maximum 1 10? 40" 1 10 = 10? mA 0 100 200C Tab a7GENERAL E> SencoNUCTOR BC546 thru BC549 Small Signal Transistors (NPN) Ratings and Characteristic Curves (Ta = 25C unless otherwise noted) Collector current versus Collector saturation voitage base-emitter voltage versus collector current mA BC546...BC549 v BCS46...BC549 Ic [tg = 20 yn O be Ie 10 5 4 3 2 1 5 4 a 2 10 Collector-base capacitance, Relative h-parameters Emitter-base capacitance versus collector current versus reverse bias voltage pF BCS46...BC549 BC546...BC549 10 8 Cca0 Cog 6 4 2 Tamy= 25C 0 0.1 0.2 05 1 2 5 10V ego, eso 58GENERAL Ee SE CONDUCTOR BC546 thru BC549 Small Signal Transistors (NPN) Ratings and Characteristic Cu rves {Ta = 25C unless otherwise noted) Gain-bandwidth product Noise figure versus collector current versus collector current MHz BCS546...BC549 dB Bcs49 100 kQ2 f 10 kod /1 O12 5s 1 2 5s 102 5 100mA 103 10? 107 1 10 mA + Ic * Ie Noise figure Noise figure versus collector current versus collector emitter voltage dB Bc549 dB BCSs49 18 G 10 10? 107 1 410 mA w'2 5 12 5 02 5 107V Ie Vee 59 n Pad oS ~ an a = BS J - & o a a