mM 4302271 0053993 72T mp Has a? HARRIS IRF530/531/532/533 IRF530R/531R/532R/533R N-Channel Power MOSFETs May 1992 Avalanche Energy Rated* Features Package TO-220AB es - 12A and 14A, 80V - 100V TOP VIEW * rps(on) = 0.162 and 0.230 i te Single Pulse Avalanche Energy Rated DRAIN SOURCE | BS (FLANGE) SOA is Power-Dissipation Limited Oo eae * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Description The IRF530, IRFSS1, IRF532, and IRFS33 are n-channel Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRFS30R, IRF531R, IRF532R and IRF533R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic $s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF530 IRF531 IRF32 IRFS33 IRF530R IRF531R IRF532R IRF533R UNITS Drain-Source Voltage (1)... 2... eee e cece ener eee eens Vos 100 80 100 80 Vv Drain-Gate Voltage (RGS = 20kN) (1)... 0... ee eee eee VoGR 100 80 100 80 v Continuous Drain Current Te = 42596 oe ccc cece cece cecevenesucuees 14 14 12 12 A Tg = 410006 0... eee. wae 10 10 8.3 8.3 A Pulsed Drain Current (3) . 56 56 48 48 A Gate-Source Voltage 2.0... 0.0 cces cece cacncecececes +20 +20 +20 +20 Vv Maximum Power Dissipation To = F2596 2 cece cee eee nee senate tenes 79 79 79 79 Ww Linear Derating Factor........... ete 0.53 0.53 0.53 0.53 W/G Inductive Current, Clamped 56 56 48 48 A (See Figure 14,L = 100pH) Single Pulse Avalanche Energy Rating (4).......-...c0e5 Eas* 69 69 69 69 mJ Operating and Storage Junction ......... eee ee eee Tu Tstg ~S5to+175 -55to+175 -55to+175 -55to0+175 9 Temperature Range Maximum Lead Temperature for Soldering............4.. TL 300 300 300 300 C (0.063 (1.6mm) from case for 10s) NOTES: 1, Ty = +25C to +150C. 4. Vop = 25V, starting Ty = +259C, L = 530uH, Reg = 250, 2. Pulse Test: Pulse width < 300ps, Duty Cycle < 2%. IPEAK = 14A. See Figure 15. 3. Repetitive rating: Pulse width limited by maximum junction temperature, See Transient Thermal Impedance Curve (Figure 5). *R Suffix Types Only CAUTION: These devices are sensitive to electrostatic discharge. Proper I.C. handling procedures should be followed. File Number 1 575.2 Copynght Harris Corporation 1992 4-286Mm 4302271 0053994 GEE MM HAS IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R, IRF533R Electrical Characteristics To = 25C, Unless Otherwise Specified LUMITS CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX | UNITS Drain-Source Breakdown Voltage BVpss | Vas = OV, Ip = 250pA IRF530/532, IRF530R/532R 100 - - Vv IRF531/533, IRF531R/533R 80 - - v Gate Threshold Voltage Vasctr) | Vos = Vas: Ip = 250uA 2.0 - 40 Vv Gate-Source Leakage Forward loss | Vag =20V - - 500 nA Gate-Source Leakage Reverse less Vas =-20V - - -500 nA Zero Gate Voltage Drain Current Ipss__| Vpg = Max Rating, Vgs = OV - - 250 pA Vps = Max Rating x 0.8, Vag = OV, - - 1000 yA Ty = +125C On-State Drain Current (Note 2) IDION) | YDS > !D(ON) X (DS(ON) Max VGS = 10V IRF530/531, IRFS30R/531R 14 - - A IRF532/533, IRF532R/533R 12 - - A Static Drain-Source On-State TDS(ON) | VGS = 10V, Ip = 8.3A Resistance (Note 2) IRF30/531, IRF530R/531R - 0.14 0.16 ot IRF532/533, IRF532R/533R - 0.20 0.23 nN Forward Transconductance (Note 2) Sts Vps > 50, Ip = 8.34 5.1 76 - S(5) input Capacitance Ciss Ves = OV, Vos = 25V, f = 1.0MHz - 600 - pF Output Capacitance Coss _| See Figure 10 - 250 - pF Reverse Transfer Capacitance Crass - 50 - pF Turn-On Delay Time ta(ON) | VDD = 50V, Ip = 14A, Rg =12n - 12 15 ns Rise Time ty See Figure 16. (MOSFET switching times z 35 31 ns 5 are essentially independent of operating iu Te Turn-Off Delay Time tg(OFF)_] temperature) - 25 35 ns oo Fall Time a - 25 38 ns 2 $ Total Gate Charge Qg Vas = 10V, Ip = 144, Vpg = 0.8V Max - 18 26 nc < wc (Gate-Source + Gate-Drain) Rating. See Figure 17 for test circuit. wi Gate-Source Charge Qgs (Gate charge is essentially independent of = 4 _ nc z 2 ti m ture. Gate-Drain (Miller) Charge Qgq operating temperature.) - 7 - nc 2 Internal Drain Inductance Lp Measured from the Modified MOSFET - 3.5 - nH contact screw on symbol showing the tab to center of die internal device inductances. Measured from the - 45 - nH drain lead, 6mm (0.25in.) from pack- age to center of die Internal Source Inductance Ls Measured from the - 75 - nH source lead, 6mm {0.25) from header and source bonding pad. Junction-to-Case Roc - - 1.9 oCc/w Case-to~Sink Rocs | Mounting surface flat, smooth and greased - 05 - oC Junction-to-Ambient Raja | Free air operation - - 80 SC/w Source Drain Diode Ratings and Characteristics Continuous Source Current Is Modified MOSFET 5 - - 14 A (Body Diode) symbol showing the Pulse Source Current ism ___| integral reverse ' ; - - 56 A (Body Diode) (Note 3) P-N junc. rectifier. S ha Diode Forward Voitage (Note 2) Vsp | Ty = +259C, Ig = 14A, Vag = OV - - 2.5 V Reverse Recovery Time ter Ty = +2596, Ip = 144, dif/dt = 100A/us 5.5 120 250 ns Reverse Recovered Charge QraR | Ty=+259C, Ip = 14A, di/dt = 100A/us 0.26 06 13 pc Forward Turn-on Time ton Intrinsic turn-on time is negligible. Turn-on - - - - speed is substantially controlled by Ls + Lp. NOTES: 1. Ty = +25C to +150C 3. Repetitive Rating: Pulse width timited by max. 4. Vpp = 25V, Start Ty = +25C, L = 350yH, 2. Pulse Test: Pulse width < 300us, junction temperature. See Transient Thermal Res = 259, Ipeak = 14A (See Figure 15) Outy Cycle < 2% Impedance Curve (Figure 5) 4-287am 4302271 0053995 ST2 MB HAS IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R, IRF533R Performance Curves 102 2 0 o uw fa = 0 Ty = 175C Ip, DRAIN CURRENT (AMPERES) w Ig, DRAIN CURRENT (AMPERES) O14 0 10 20 30 40 50 0 2 4 6 8 10 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS FIGURE 2. TYPICAL TRANSFER CHARACTERISTICS 25 103 Nu a a a w Tp, DRAIN CURAENT (AMPERES) 3 ~~ an Ip. DRAIN CURRENT (AMPERES) i Oo 5 Tp=259C 2|Tj=175C INGLE PULSE 4v 80 t 0 20 30 40 5 0 ole 5 49. 2 5 492 2 5 493 Vpg. DAAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS FIGURE 3. TYPICAL SATURATION CHARACTERISTICS FIGURE 4. MAXIMUM SAFE OPERATING AREA al jt at |st2 NOTES: 1 QUTY FACTOR, O=t1/to 2 PEAK Ty=Ppy X Zenuc + Te 4078 1074 1073 4072 O4 1 10 t4. HECTANGULAR PULSE DURATION (SECONDS) THERMAL RESPONSE (Zp Jc) FIGURE 5. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 4-288Me 430ee71) OO5399b 439 MB HAS IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R, IRF533R Performance Curves (Continued) Vog 2 50V TEST 2250, T y=25c = o Tyat7sec TRANSCONDUCTANCE (SIEMENS) 9ts: Q 3 10 15 20 25 Ip. ORAIN CURRENT (AMPERES) FIGURE 6. TYPICAL TRANSCONDUCTANCE vs DRAIN CURRENT 0 BS BVpgg. URAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMAL 120) O75 =60-40-20 0 20 40 60 80 100 120 140 160 180 Ty JUNCTION TEMPERATURE ( C FIGURE 8. BREAKDOWN VOLTAGE vs TEMPERATURE 1500 58 * . = Cog + Cog. gs SHORTED =C figs onss c qd oss 7 Cys + Lys Cgg 7 Wgg * Cg) Cys * gg 1200 900 600 C, CAPACITANCE (pF) 300 0 1 2 5 10 2 5 402 Vong. ORAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE o fu oo a T y= 178C Ty=25C Ipg REVERSE DRAIN CURRENT (AMPERES on a Oo 4 08 te 16 20 Yep. SOURCE-TO-ORAIN VOLTAGE (VOLTS) FIGURE 7. TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 30 Ip = 14a oa @ o Mm DAAIN-TO-SOURCE ON RESISTANCE {NORMAL IZED) Fos (an)+ v = 10V 0 =60-40-20 0 20 40 60 80 100 120 140 160 180 Ty, JUNCTION TEMPERATURE (C) FIGURE 9. NORMALIZED ON-RESISTANCE vs TEMPERATURE 20 Ig = 14A Vgg. GATE-TO-SQUACE VOLTAGE (VOLTS) FOR TEST CIRCUIT SEE FIGURE 17 0 5 12 18 24 30 Gg. TOTAL GATE CHARGE (nC) FIGURE 11. TYPICAL GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 4-289 f du zo z9O <= x 25 o aM 430ee7) 005399? 375 MBHAS IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R, IRF533R Performance Curves (Continued) 1.5 wi Qo z i? x a 1e w Cc z So woos x 2 Qo wn i o - 06 =z z a leq a 1. 03 Veg 7 10 Veg = 20v 5 no Oo Cc 00 Go 24 48 Ig. DAAIN CURAENT [AMPERES) FIGURE 12. TYPICAL ON RESISTANCE vs DRAIN CURRENT _ Qo < Ves=1 E, = 0.5BVpsg Eg= 0.75 BYpss FIGURE 14a. CLAMPED INDUCTIVE TEST CIRCUIT FIGURE14b. CLAMPED INDUCTIVE WAVEFORMS Fp DUT I Re at voor 1 | TDD PULSE WIDTH < 12S DUTY FACTOR < 0.1% FIGURE 16. SWITCHING TIME TEST CIRCUIT fa IRF530, IRFS31, IAFS31 o IRF53aR, IRF533R Ip. ORAIN CURRENT (AMPERES) a w og 50 75 100 125 160 178 2 t Tg. CASE TEMPERATURE ( C) FIGURE 13. MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE VARY tp TO OBTAIN REQUIRED PEAK |, Vag= 10V ij FIGURE 15b. UNCLAMPED ENERGY WAVEFORMS +Vps CURRENT (ISOLATED REGULATOR SUPPLY) SAME = TYPE 12V 10.2 AS DUT BATTERY BE -Vps Ig CURRENT Le I CURRENT SAMPLING RESISTOR ~ SAMPLING RESISTOR FIGURE 17. GATE CHARGE TEST CIRCUIT 4-290