Ordering number : ENA1401A CPH5871 N-Channel Power MOSFET 30V, 3.5A, 52m, Single CPH5 with Schottky Diode http://onsemi.com Features * * * * Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting * Protection diode in Halogen free compliance * * 1.8V drive [MOSFET] Ultrahigh-speed switching * * Low forward voltage [SBD] Short reverse recovery time Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 30 V 12 V 3.5 A PW10s, duty cycle1% 14 A When mounted on ceramic substrate (600mm2x0.8mm) 1unit 0.9 W 150 C --55 to +125 C 30 V [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 35 V 1 A 10 A --55 to +125 C --55 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-005 * Package : CPH5 * JEITA, JEDEC : SC-74A, SOT-25 * Minimum Packing Quantity : 3,000 pcs./reel 4 3 Packing Type : TL Marking YZ 0.05 1.6 2.8 LOT No. 5 CPH5871-TL-H 0.15 2.9 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 July, 2013 2 61312 TKIM/12809PE MSIM TC-00001794 No. A1401-1/7 CPH5871 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=2A 2.0 RDS(on)1 ID=2A, VGS=4.5V 40 52 m RDS(on)2 ID=1A, VGS=2.5V 53 74 m RDS(on)3 ID=0.5A, VGS=1.8V 82 132 m Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 30 V 1 A 10 A 1.3 V 3.4 S 430 pF 59 pF Crss 38 pF td(on) tr 10 ns 41 ns 36 ns Fall Time td(off) tf Total Gate Charge Qg VDS=10V, f=1MHz See specified Test Circuit. Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD IS=3.5A, VGS=0V VR VF1 IR=0.5mA IF=0.7A VF2 IF=1A VR=16V Interterminal Capacitance IR C Reverse Recovery Time trr VDS=15V, VGS=4.5V, ID=3.5A 37 ns 4.7 nC 0.8 nC 1.1 nC 0.8 1.2 V 0.45 0.5 V 0.48 0.53 [SBD] VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Switching Time Test Circuit (MOSFET) 4.5V 0V D PW=10s D.C.1% 27 pF 10 ns Duty10% ID=2A RL=7.5 VOUT VIN A trr Test Circuit (SBD) VDD=15V VIN V 15 50 100 10 10mA Reverse Current V 100mA Forward Voltage 30 100mA Reverse Voltage 10s --5V G trr P.G 50 S CPH5871 Ordering Information Device CPH5871-TL-H Package Shipping memo CPH5 3,000pcs./reel Pb Free and Halogen Free No. A1401-2/7 CPH5871 ID -- VDS 2.5 2.0 1.5 1.5V 1.0 0.5 VGS=1.2V 0 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.9 120 A =0.5 V, I D 100 =1.8 VGS 80 1.0A I D= , V 5 =2. 2.0A VGS , I D= 4.5V = VGS 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C IS -- VSD 7 5 140 1 2 3 4 5 6 7 8 | yfs | -- ID 9 10 IT14372 [MOSFET] VDS=10V 5 3 2 C 5 -2 =- Ta 1.0 7 75 C C 25 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT14348 SW Time -- ID [MOSFET] VDD=15V VGS=4.5V 3 Switching Time, SW Time -- ns Ta= 75C 25C --25 C Source Current, IS -- A 0 2 100 7 5 td(off) 3 tf 2 td(on) 10 tr 7 5 3 0 0.2 0.4 0.6 0.8 1.0 2 0.01 1.2 Diode Forward Voltage, VSD -- V IT14349 Ciss, Coss, Crss -- VDS [MOSFET] 1000 Ciss 3 2 100 7 Coss 5 Crss 3 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14351 3 5 7 0.1 2 3 5 7 1.0 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V 5 2 Drain Current, ID -- A f=1MHz 7 Ciss, Coss, Crss -- pF 20 5 2 10 40 Drain Current, ID -- A [MOSFET] 3 0.01 60 IT14373 1.0 7 5 0.1 7 5 80 0.1 0.01 3 2 100 7 VGS=0V 3 ID=1A 2A 0.5A Gate-to-Source Voltage, VGS -- V 160 2 [MOSFET] Ta=25C 120 0 1.0 Drain-to-Source Voltage, VDS -- V IT14371 RDS(on) -- Ta [MOSFET] 140 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0.3 Forward Transfer Admittance, | yfs | -- S 0 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- m 3.0 [MOSFET] 1.8V 7.0V 4.5V 3.5 Drain Current, ID -- A 3.5V 2.5V 4.0 2 3 5 7 10 IT14350 [MOSFET] VDS=15V ID=3.5A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 Total Gate Charge, Qg -- nC 5 6 IT14374 No. A1401-3/7 CPH5871 ASO IDP=14A 10 7 5 Drain Current, ID -- A [MOSFET] PW10s 100 1m s s ID=3.5A 3 2 10 DC 1.0 7 5 op Operation in this area is limited by RDS(on). 3 2 0.1 7 5 10 ms 0m era s tio n(T a= 25 C ) Ta=25C Single pulse When mounted on ceramic substrate (600mm2x0.8mm)1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V [SBD] 2 3 2 0.1 7 5 0.2 0 20 40 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF -- V (2) (4)(3) 360 0.5 Sine wave 0.4 180 360 0.3 0.2 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.1 0 0 0.2 0.4 0.6 0.8 140 160 IT14376 [SBD] 75C 50C 10 5 25C 1.0 5 0C 0.1 5 0.01 5 --25C 0 5 10 IFSM -- t 15 20 25 30 C -- VR 3 35 IT09554 [SBD] 2 100 7 5 3 2 10 1.0 Average Output Current, IO -- A 14 120 Reverse Voltage, VR -- V Interterminal Capacitance, C -- pF (1) 0.6 100 Ta=125C 100C 100 5 0.0001 [SBD] Rectangular wave 0.7 80 IR -- VR 10000 5 IT09553 PF(AV) -- IO 0.8 60 0.001 5 Ta= 1 2 Average Forward Power Dissipation, PF(AV) -- W 0.4 Ambient Temperature, Ta -- C Reverse Current, IR -- A 5 25 C 100 C 75C 50C 25C 0C --25C Forward Current, IF -- A 7 3 Surge Forward Current, IFSM(Peak) -- A 0.6 1000 5 1.0 0.01 0.8 0 5 [MOSFET] When mounted on ceramic substrate (600mm2x0.8mm) 1unit 0.9 IT14375 IF -- VF 3 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 3 2 1.2 IT09555 [SBD] 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A1401-4/7 CPH5871 Embossed Taping Specification CPH5871-TL-H No. A1401-5/7 CPH5871 Outline Drawing CPH5871-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1401-6/7 CPH5871 Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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