Rev. A, April 2003
FQP3N80C/FQPF3N80C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 67mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA800 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 1 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 1.5 A -- 4.0 4.8 Ω
gFS Forward Transconductance VDS = 50 V, ID = 1.5 A ( No te 4) -- 3 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 543 705 pF
Coss Output Capacitance -- 54 70 pF
Crss Reverse Transfer Capacitance -- 5.5 7. 5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 3 A,
RG = 25 Ω
(Note 4, 5)
-- 15 40 ns
trTurn-On Rise Time -- 43.5 95 ns
td(off) Turn-Off D e l a y Time -- 22 .5 55 n s
tfTurn -Off Fa ll Time -- 3 2 75 ns
QgTotal Gate Ch arge VDS = 640 V, ID = 3 A,
VGS = 10 V
(Note 4, 5)
-- 13 16.5 nC
Qgs Gate-Source Charge -- 3.4 -- nC
Qgd Gate-Drain Charge -- 5.8 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 3.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 3.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 3.0 A,
dIF / dt = 100 A/µs (Note 4)
-- 642 -- ns
Qrr Reverse Recovery Charge -- 4.0 - - µC