BD139 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R204-007.B
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.5 A
Peak Collector Current ICM 2 A
Peak Base Current lBM 1 A
TO-126 1.25 W
Power Dissipation (Ta=25°C) TO-251 PD 1 W
Junction Temperature TJ +150 °C
Operating Temperature TOPR -65~+150 °C
Storage Temperature TSTG -65~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
IE=0, VCB=30V 100 nA
Collector Cut-Off Current ICBO IE=0, VCB=30V, TJ=125°C 10 μA
Emitter Cut-Off Current IEBO I
C=0, VEB=5V 100 nA
IC=5mA 40
IC =150mA 63 250
DC Current Gain VCE=2V (See Fig.1)
IC =500mA 25
BD139-10 63 160
DC Current Gain BD139-16
hFE
IC =150mA, VCE=2V
(See Fig.1) 100 250
Collector-Emitter Saturation Voltage VCE(SAT) IC =500 mA, IB=50mA 0.5 V
Base-Emitter Voltage VBE I
C =500 mA, VCE=2V 1 V
Transition Frequency fT I
C =500 mA, VCE=5V, f=100MHz 190 MHz