BCP54...-BCP56... NPN Silicon AF Transistors * For AF driver and output stages * High collector current * Low collector-emitter saturation voltage * Complementary types: BCP51...BCP53 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCP54 * 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP55 * 1=B 2=C 3=E 4=C - - SOT223 BCP55-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-10 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-16 * 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as the type-name 1 2011-10-13 BCP54...-BCP56... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP54 45 BCP55 60 BCP56 80 Collector-base voltage Unit VCBO BCP54 45 BCP55 60 BCP56 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp 10 ms ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 2 W 150 C A mA TS 120C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS -65 ... 150 Value 15 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-10-13 BCP54...-BCP56... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCP54... 45 - - IC = 10 mA, IB = 0 , BCP55... 60 - - IC = 10 mA, IB = 0 , BCP56-10, -16 80 - - IC = 100 A, IE = 0 , BCP54... 45 - - IC = 100 A, IE = 0 , BCP55... 60 - - IC = 100 A, IE = 0 , BCP56-10, -16 100 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current ICBO A VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 20 DC current gain1) - hFE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCP54/BCP55 40 - 250 IC = 150 mA, VCE = 2 V, BCP56-10 63 100 160 IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16 100 160 250 IC = 500 mA, VCE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 3 2011-10-13 BCP54...-BCP56... DC current gain hFE = (IC) Collector-emitter saturation voltage VCE = 2 V IC = (VCEsat ), hFE = 10 10 3 h FE BCP 54...56 EHP00268 5 C EHP00271 mA 10 3 100 C 25 C 10 2 BCP 54...56 10 4 -50 C 5 100 C 25 C -50 C 10 2 10 1 10 1 5 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 C 4 0 0.2 0.6 0.4 V V CEsat Base-emitter saturation voltage Collector cutoff current ICBO = (TA) IC = (VBEsat), hFE = 10 VCBO = 30 V 10 4 C BCP 54...56 EHP00270 10 4 CBO mA BCP 54...56 EHP00269 nA max 10 3 10 0.8 3 100 C 25 C -50 C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 2011-10-13 BCP54...-BCP56... Transition frequency fT = (IC) VCE = 10 V 10 3 EHP00267 2.4 MHz W 5 Ptot fT BCP 54...56 Total power dissipation P tot = (TS) 1.6 10 2 1.2 5 0.8 0.4 10 1 10 0 5 10 1 5 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 C 75 C Permissible Pulse Load RthJS = (tp) 150 TS Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 Ptotmax/PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-13 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BCP54...-BCP56... 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2011-10-13 BCP54...-BCP56... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 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