© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 4
1Publication Order Number:
2N4123/D
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
2N4123
2N4124
VCEO 30
25
Vdc
Collector−Base Voltage
2N4123
2N4124
VCBO 40
30
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC200 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2N
412x
AYWW G
G
2N4124G TO−92
(Pb−Free)
5000 Units / Bulk
Device Package Shipping†
2N4123RLRM TO−92 2000 / Tape & Ammo
ORDERING INFORMATION
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure
,
BRD8011
/
D.
2N4123, 2N4124
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0) 2N4123
2N4124
V(BR)CEO 30
25
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) 2N4123
2N4124
V(BR)CBO 40
30
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0 −
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO −50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO −50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123
2N4124
hFE 50
120
25
60
150
360
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) −0.3
Vdc
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat) −0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
2N4124
fT250
300
−
−
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo −8.0
pF
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb −4.0
pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123
2N4124
hfe 50
120
200
480
−
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124
|hfe|
2.5
3.0
50
120
−
−
200
480
−
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123
2N4124
NF
−
−
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N4123, 2N4124
http://onsemi.com
3
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME (ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
Figure 3. Frequency Variations
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 4. Source Resistance
RS, SOURCE RESISTANCE (kW)
0
NF, NOISE FIGURE (dB)
12 4 1020400.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 400.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1 kHz IC = 1 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 500 W
IC = 100 mA
SOURCE RESISTANCE = 1 kW
IC = 50 mA
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
2N4123, 2N4124
http://onsemi.com
4
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
100.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
hie
0.1 0.2 1.0 2.0 5.0 100.5
0.1 0.2 1.0 2.0 5.0 10
0.5
2
1
0.1 0.2 1.0 2.0 5.0 10
0.5
m
-4
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
hfe, CURRENT GAIN
, INPUT IMPEDANCE (k )Ω
STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 700.2 0.3
0.1
1001.00.7 20030205.0 7.0
FE
VCE = 1 V
TJ = +125°C
+25°C
-55°C
2N4123, 2N4124
http://onsemi.com
5
Figure 10. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160 18020 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
+25°C to +125°C
-55°C to +25°C
+25°C to +125°C
-55°C to +25°C
qVC for VCE(sat)
qVB for VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
2N4123, 2N4124
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N4123/D
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