2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features * Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter-Base Voltage VCEO VCBO Value Vdc 30 25 1 EMITTER Vdc 40 30 VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range 2 BASE Unit TO-92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 412x AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping 2N4123RLRM TO-92 2000 / Tape & Ammo TO-92 (Pb-Free) 5000 Units / Bulk 2N4124G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2008 November, 2008 - Rev. 4 1 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N4123/D 2N4123, 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 25 - - 40 30 - - 5.0 - - 50 - 50 50 120 150 360 25 60 - - - 0.3 - 0.95 250 300 - - - 8.0 - 4.0 50 120 200 480 2.5 3.0 - - 50 120 200 480 - - 6.0 5.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IE = 0) 2N4123 2N4124 Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) 2N4123 2N4124 Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123 2N4124 (IC = 50 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 Collector-Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 fT Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123 2N4124 Current Gain - High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) hfe |hfe| 2N4123 2N4124 Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123 2N4124 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 NF MHz pF pF - - dB 2N4123, 2N4124 200 10 100 5.0 Cibo 3.0 ts 70 50 TIME (ns) CAPACITANCE (pF) 7.0 td 30 tf tr 20 Cobo 2.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 5.0 20 30 40 1.0 2.0 3.0 Figure 1. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 2. Switching Times AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 14 SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 f = 1 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1 kW IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) IC = 1 mA 12 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 20 40 0 0.1 100 Figure 3. Frequency Variations 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kW) Figure 4. Source Resistance http://onsemi.com 3 40 100 2N4123, 2N4124 h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 100 hoe , OUTPUT ADMITTANCE (m mhos) hfe , CURRENT GAIN 300 200 100 70 50 30 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 5. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 10 hie , INPUT IMPEDANCE (k ) 5.0 10 5.0 10 Figure 6. Output Admittance 20 5.0 2.0 1.0 0.5 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 7. Input Impedance 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 8. Voltage Feedback Ratio STATIC CHARACTERISTICS h FE , DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 VCE = 1 V +25C 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain http://onsemi.com 4 20 30 50 70 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 2N4123, 2N4124 1.0 TJ = 25C 0.8 IC = 1 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 TJ = 25C VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 qVC for VCE(sat) 0 -55C to +25C -0.5 -55C to +25C -1.0 +25C to +125C qVB for VBE(sat) -1.5 -2.0 200 +25C to +125C 0 Figure 11. "On" Voltages 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 180 200 2N4123, 2N4124 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X-X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. 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