BAV74
Jul-31-20011
Silicon Switching Diode Array
For high-speed switching applications
Common cathode
1
2
3
VPS05161
EHA07004
1
3
2
Type Marking Pin Configuration Package
BAV74 JAs 1 = A1 2 = A2 3 = C1/2 SOT23
Maximum Ratings
Parameter ValueSymbol Unit
VDiode reverse voltage VR50
Peak reverse voltage 50
VRM
IF200 mAForward current A4.5
Surge forward current, t = 1
sIFS
Total power dissipation, TS = 35 °C Ptot 250 mW
Tj150Junction temperature °C
-65 ... 150Storage temperature Tst
g
Thermal Resistance
Junction - soldering point1) RthJS
460 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAV74
Jul-31-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
typ. max.min.
DC characteristics
V- -
V(BR) 50Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 100 mA 1- -
VF
µAReverse current
VR = 50 V IR0.1- -
100- -
IR
Reverse current
VR = 50 V, TA = 150 °C
AC characteristics pF
2- -
CD
Diode capacitance
VR = 0 V, f = 1 MHz
nsReverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100
,
measured at IR = 1mA
4
trr - -
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50
, tr = 0.35ns,
C
1pF
BAV74
Jul-31-20013
Reverse current IR = f (TA)
0 50 100 150
BAV 74 EHB00070
25V
70V
max.
typ.
1
10
2
10
5
Ι
R
10
5
3
10
5
4
10
nA
5
˚C
T
A
VR= 70 V
Forward current IF = f (TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mA
220
IF
Peak forward current IFM = f (tp)
TA = 25°C
EHB00072
-6
10
T
D=T
BAV 74
10-5 10-4 10-3 10-2 10-1 100
s
tptp
10-2
10-1
A
FM
10 0
1
10
Ι
2
10
t
= 0.005D 0.01
0.02
0.05
0.1
0.2
Forward current IF = f (VF)
TA = 25°C
0
0
EHB00071BAV 74
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
BAV74
Jul-31-20014
Forward voltage VF = f (TA)
0
0.5
1.0
0 50 100 150
BAV 74 EHB00073
V
TA
V
F
˚C
Ι
F= 100 mA
10 mA
1 mA
0.1 mA
