Order this document by BC549B/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC549 BC550 Unit Collector - Emitter Voltage VCEO 30 45 Vdc Collector - Base Voltage VCBO 30 50 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 30 45 -- -- -- -- 30 50 -- -- -- -- 5.0 -- -- Vdc -- -- -- -- 15 5.0 nAdc Adc -- -- 15 nAdc OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CEO BC549B,C BC550B,C Vdc V(BR)CBO BC549B,C BC550B,C Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 Vdc 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 100 200 420 150 270 290 500 -- -- 450 800 -- -- -- 0.075 0.3 0.25 0.25 0.6 0.6 -- 1.1 -- -- -- 0.55 0.52 0.55 0.62 -- -- 0.7 fT -- 250 -- MHz Ccbo -- 2.5 -- pF 240 450 330 600 500 900 -- -- 0.6 -- 2.5 10 ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) Base-Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) -- dB NF1 NF2 NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s - Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 1.0 VCE = 10 V TA = 25C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 0 0.1 100 200 Figure 2. Normalized DC Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 Figure 3. "Saturation" and "On" Voltages 10 400 300 7.0 200 100 80 60 C, CAPACITANCE (pF) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 VCE = 10 V TA = 25C 40 30 TA = 25C Cib 5.0 3.0 Cob 2.0 20 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 1.0 0.4 0.6 1.0 r b, BASE SPREADING RESISTANCE (OHMS) Figure 4. Current-Gain -- Bandwidth Product 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 5. Capacitance 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc) 5.0 10 Figure 6. Base Spreading Resistance Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. 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