NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage (RGS = 20kΩ), VDGR 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, ID
Continuous 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 152A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS ±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, PD125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, Tstg –55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, RthJC 1.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, RthJA 60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Ratings
Drain–Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0 60 – – V
Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 2.1 3.0 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, TJ = +25°C – 1 10 µA
VGS = 0 TJ = +125°C – 0.1 1.0 mA
Gate–Source Leakage Current IGSS VGS = ±30V, VDS = 0 – 10 100 nA
Drain–Source On–State Resistance RDS(on) ID = 20A, VGS = 10V – 40 45 mΩ
Dynamic Ratings
Forward Transconductance gfs ID = 20A, VDS = 25V 8 13.5 – mhos
Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz –1650 2000 pF
Output Capacitance Coss – 560 750 pF
Reverse Transfer Capacitance Crss – 300 400 pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Ratings (Cont’d)
Turn–On Time td (on) VCC = 30V, VGS = 10V,
Ω
–25 40 ns
trID = 3A, RGS = 50Ω–60 90 ns
Turn–Off Time td (off) –125 160 ns
tf–100 130 ns
Internal Drain Inductance LdMeasured from contact screw
on tab to center of die –3.5 –nH
Measured from drain lead 6mm
from package to center of die –4.5 –nH
Internal Source Inductance LsMeasured from source lead
6mm from package to source
bond pad
–7.5 –nH
Reverse Diode
Continuous Reverse Drain Current IDR – – 41 A
Pulsed Reverse Drain Current IDRM – – 164 A
Diode Forward On–Voltage VSD IF = 41A, VGS = 0 –1.4 2.0 V
Reverse Recovery Time trr IF = 41A, VGS = 0, VR = 30V –60 –ns
Reverse Recovery Charge Qrr –diF/dt = 100A/µs–0.3 –µC
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
