1KSMBJ18CA - Littelfuse, Inc. - searchdatasheet.com

Silicon Avalanche Diodes

270 www.littelfuse.com

1000W Surface Mount Transient Voltage Suppressor

The 1KSMBJ range of surface mount protectors utilizes the

proven glass passivated technology used in many Littelfuse

product portfolios. Rated at 1000 watts (10 x 1000 µs double

exponential waveform), the 1KSMBJ bridges the gap left by

traditional types rated at 600 watts and 1500 watts, suiting

many applications where both power handling and size are

paramount. The extremely fast turn-on time (less than one pico

second), coupled with the low clamping factor and low on-state

impedance, make this range ideal for the protection of today’s

circuits. Our specially selected range of voltages has been

chosen to fulfill optimum protection for use in automotive and

telecom applications.

FEATURES

• RoHS Compliant

• Available in breakdown voltages from 6.8v. to 160v;

specially designed for automotive applications

• Response time: 1x10-12.secs (theoretical)

• Glass passivated junction

• Offers high-surge rating in compact package: bridges the

gap between 600W and 1.5KW

• Forward surge rating:

100A 8.3ms single half sine wave

• 100% tested

• Operating temperature: -55°C to +150°C

Agency Approvals: Recognized under the Components Program

of Underwriters Laboratories.

Agnecy File Numbers: E128662

1KSMBJ Series

SMBJ

Voltage

Bi-Directional

5% Voltage Tolerance

Tape and reeled (3000 pcs)

ORDERING INFORMATION

Mechanical Specifications:

Weight: 0.093 grammes (approx)

Case:

DO-214AA Outline moulded plastic over

glass passivated junction. UL 94 V-0 rated

Terminals: Solderable to MIL-STD-750 Method 2026

Solderable Leads: 23°C for 10 seconds

Marking: Cathode band, device code logo

Standard Packaging: Supplied on reels of 3000 pieces. Tape

width 12mm. Follows requirements of

EIA 481-1

RoHS

Silicon Avalanche Diodes

271

www.littelfuse.com

SILICON DIODE

ARRAYS

Reverse

Stand Off

Voltage

(Volts)

Part

Number Breakdown

Voltage

VBR (Volts) @ IT

MIN MAX IT(mA)

Maximum

Reverse

Leakage

IR@ VR

(µA)

Maximum

Clamping

Voltage

VC@IPP

(Volts)

Maximum

Peak Pulse

Current

IPP

(A)

1KSMBJ Series

1KSMBJ 6.8 N10A 5.50 6.12 7.46 10.0 1000.0 (4) 10.8 92.5

1KSMBJ 6.8A N10B 5.80 6.45 7.14 10.0 1000.0 (4) 10.5 95.0

1KSMBJ 7.5 N10C 6.05 6.75 8.25 10.0 500.0 (4) 11.7 85.0

1KSMBJ 7.5A N10D 6.40 7.13 7.88 10.0 500.0 (4) 11.3 88.3

1KSMBJ 8.2 N10E 6.63 7.38 9.02 10.0 200.0 (4) 12.5 80.0

1KSMBJ 8.2A N10F 7.02 7.79 8.61 10.0 200.0 (4) 12.1 83.3

1KSMBJ 9.1 N10G 7.37 8.19 10.0 1.0 50.0 (4) 13.8 73.3

1KSMBJ 9.1A N10H 7.78 8.65 9.55 1.0 50.0 (4) 13.4 75.0

1KSMBJ 10 N10I 8.10 9.00 11.0 1.0 10.0 (4) 15.0 66.7

1KSMBJ 10A N10J 8.55 9.50 10.5 1.0 10.0 (4) 14.5 68.3

1KSMBJ 11 N10K 8.92 9.90 12.1 1.0 5.0 (4) 16.2 61.7

1KSMBJ 11A N10L 9.40 10.5 11.6 1.0 5.0 (4) 15.6 63.3

1KSMBJ 12 N10M 9.72 10.80 13.2 1.0 5.0 (4) 17.3 58.3

1KSMBJ 12A N10N 10.2 11.4 12.6 1.0 5.0 16.7 60.0

1KSMBJ 13 N10O 10.5 11.7 14.3 1.0 5.0 19.0 53.3

1KSMBJ 13A N10P 11.1 12.4 13.7 1.0 5.0 18.2 55.0

1KSMBJ 15 N10Q 12.1 13.5 16.5 1.0 5.0 22.0 45.0

1KSMBJ 15A N10R 12.8 14.3 15.8 1.0 5.0 21.2 46.7

1KSMBJ 16 N10S 12.9 14.4 17.6 1.0 5.0 23.5 43.3

1KSMBJ 16A N10T 13.6 15.2 16.8 1.0 5.0 22.5 45.0

1KSMBJ 18 N10U 14.5 16.2 19.8 1.0 5.0 26.5 38.0

1KSMBJ 18A N10V 15.3 17.1 18.9 1.0 5.0 25.2 40.0

1KSMBJ 20 N10W 16.2 18.0 22.0 1.0 5.0 29.1 35.0

1KSMBJ 20A N10X 17.1 19.0 21.0 1.0 5.0 27.7 36.7

1KSMBJ 22 N10Y 17.8 19.8 24.2 1.0 5.0 31.9 31.7

1KSMBJ 22A N10Z 18.8 20.9 23.1 1.0 5.0 30.6 33.3

1KSMBJ 24 O10A 19.4 21.6 26.4 1.0 5.0 34.7 28.3

1KSMBJ 24A O10B 20.5 22.8 25.2 1.0 5.0 33.2 30.0

1KSMBJ 27 O10C 21.8 24.3 29.7 1.0 5.0 39.1 25.5

1KSMBJ 27A O10D 23.1 25.7 28.4 1.0 5.0 37.5 26.7

1KSMBJ 30 O10E 24.3 27.0 33.0 1.0 5.0 43.5 22.9

1KSMBJ 30A O10F 25.6 28.5 31.5 1.0 5.0 41.4 24.0

1KSMBJ 33 O10G 26.8 29.7 36.3 1.0 5.0 47.7 21.0

1KSMBJ 33A O10H 28.2 31.4 34.7 1.0 5.0 45.7 22.0

1KSMBJ 36 O10I 29.1 32.4 39.6 1.0 5.0 52.0 19.2

1KSMBJ 36A O10J 30.8 34.2 37.8 1.0 5.0 49.9 20.0

ELECTRICAL SPECIFICATION @ Tamb 25°C

Notes:

1. All testing is performed at Tamb = 25˚C (+/- 3˚C)

2. Bv is measured using a pulse of 20 milliseconds or less

3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts

4. Peak Pulse Current is quoted @ 10/1000 µsec

5. All parameters are stated as tested on a FET Tester Model 3400

6. Devices are uni-directional. Vf is not specified.

1000W Surface Mount Transient Voltage Suppressor

Device

Code

RoHS

Silicon Avalanche Diodes

272 www.littelfuse.com

Reverse

Stand Off

Voltage

(Volts)

Part

Number Breakdown

Voltage

VBR (Volts) @ IT

MIN MAX

Maximum

Reverse

Leakage

IR@ VR

(µA)

Maximum

Clamping

Voltage

VC@IPP

(Volts)

Maximum

Peak Pulse

Current

IPP

(A)

1KSMBJ 39 O10K 31.6 35.1 42.9 1.0 5.0 56.4 17.5

1KSMBJ 39A O10L 33.3 37.1 41.0 1.0 5.0 53.9 18.7

1KSMBJ 43 O10M 34.8 38.7 47.3 1.0 5.0 61.9 16.0

1KSMBJ 43A O10N 36.8 40.9 45.2 1.0 5.0 59.3 16.8

1KSMBJ 47 O10O 38.1 42.3 51.7 1.0 5.0 67.8 14.8

1KSMBJ 47A O10P 40.2 44.7 49.4 1.0 5.0 64.8 15.5

1KSMBJ 51 O10Q 41.3 45.9 56.1 1.0 5.0 73.5 13.7

1KSMBJ 51A O10R 43.6 48.5 53.6 1.0 5.0 70.1 14.3

1KSMBJ 56 O10S 45.4 50.4 61.6 1.0 5.0 80.5 12.3

1KSMBJ 56A O10T 47.8 53.2 58.8 1.0 5.0 77.0 13.0

1KSMBJ 62 O10U 50.2 55.8 68.2 1.0 5.0 89.0 11.3

1KSMBJ 62A O10V 53.0 58.9 65.1 1.0 5.0 85.0 11.8

1KSMBJ 68 O10W 55.1 61.2 74.8 1.0 5.0 98.0 10.2

1KSMBJ 68A O10X 58.1 64.6 71.4 1.0 5.0 92.0 10.8

1KSMBJ 75 O10Y 60.7 67.5 82.5 1.0 5.0 108.0 9.2

1KSMBJ 75A O10Z 64.1 71.3 78.8 1.0 5.0 103.0 9.7

1KSMBJ 82 P10A 66.4 73.8 90.2 1.0 5.0 118.0 8.5

1KSMBJ 82A P10B 70.1 77.9 86.1 1.0 5.0 113.0 8.8

1KSMBJ 91 P10C 73.7 81.9 100.0 1.0 5.0 131.0 7.5

1KSMBJ 91A P10D 77.8 86.5 95.5 1.0 5.0 125.0 8.0

1KSMBJ 100 P10E 81.0 90.0 110.0 1.0 5.0 144.0 7.0

1KSMBJ 100A P10F 85.5 95.0 105.0 1.0 5.0 137.0 7.3

1KSMBJ 110 P10G 89.2 99.0 121.0 1.0 5.0 158.0 6.3

1KSMBJ 110A P10H 94.0 105.0 116.0 1.0 5.0 152.0 6.6

1KSMBJ 120 P10I 97.2 108.0 132.0 1.0 5.0 173.0 5.8

1KSMBJ 120A P10J 102.0 114.0 126.0 1.0 5.0 165.0 6.1

1KSMBJ 130 P10K 105.0 117.0 143.0 1.0 5.0 187.0 5.3

1KSMBJ 130A P10L 111.0 124.0 137.0 1.0 5.0 179.0 5.6

1KSMBJ 150 P10M 121.0 135.0 165.0 1.0 5.0 215.0 4.7

1KSMBJ 150A P10N 128.0 143.0 158.0 1.0 5.0 207.0 4.8

1KSMBJ 160 P10O 130.0 144.0 176.0 1.0 5.0 230.0 4.3

1KSMBJ 160A P10P 136.0 152.0 168.0 1.0 5.0 219.0 4.6

1KSMBJ Series

ELECTRICAL SPECIFICATION @ Tamb 25°C

Notes:

1. All testing is performed at Tamb = 25˚C (+/- 3˚C)

2. Bv is measured using a pulse of 20 milliseconds or less

3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts

4. Peak Pulse Current is quoted @ 10/1000 µsec

5. All parameters are stated as tested on a FET Tester Model 3400

6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A

1000W Surface Mount Transient Voltage Suppressor

Device

Code

IT(mA)

RoHS

Silicon Avalanche Diodes

273

www.littelfuse.com

SILICON DIODE

ARRAYS

1KSMBJ Series

1000W Surface Mount Transient Voltage Suppressor

2.16 2.74 2.16

2.26

Solder Pads

All dimensions in mm

RoHS