on pe f3a7soa1 oo1ais? 4 i 3875081 GE SOLID STATE OIE 18157) Dy~egay)_ Standard Power MOSFETs = 7~ 3973 RFM12N18, RFM12N20, RFP12N18, RFP12N20 File Number 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V. tos(on):0.25Q - 6 Features: = SOA is power-dissipation limited 3S = Nanosecond switching speeds 92$-33741 Linear transter characteristics High input impedance o Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM12N18 RFM12N20 DRAIN SOURCE {FLANGE} The RFM12N18 and RFM12N20 and the RFP12N18 and RFP12N20 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor GATE 92$-37801 drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- JEDEC TO-204AA drive power. These types can be operated directly from RFP12N18 integrated circuits, RFP12N20 The RFM-types are supplied in the JEDEC TO-204AA steel 1 SOURCE package and the RFP-types in the JEDEC TO-220AB plastic DRAIN == package. (FLANGE ~~ O pee _ E 92s-39878 The RFM and RFP series were formerly RCA developmental numbers TA9293 and TA9294, respectively. TOP VIEW JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM12N18 RFM12N20 REP12N18 RFP12N20 DRAIN-SOURCE VOLTAGE ........... Voss 180 200 180 200 Vv DRAIN-GATE VOLTAGE (Ras=1 MQ) .. Voan 180 200 180 200 v GATE-SOURCE VOLTAGE............. Ves +20 v DRAIN CURRENT RMS Continuous....... .......00ceeee Io 12 A Pulsed ...cccssseccevee sesevcervencs lou 30 A POWER DISSIPATION @ Te#28C oo cece ccacceceneeneces Pr 100 100 75 75 w Derate above T.=25C 0.8 0.8 0.6 0.6 wre OPERATING AND STORAGE aed - TEMPERATURE .......0. sesecaceee Tj, Tao 55to+160 1002 =O1 DE Bsazsnaa 0014154 O T Standard Power MOSFETs 3875081 G E SOLID STATE RFM12N18, RFM12N20, RFP12N18, RFP12N20 T39-// T+ 39-3 ELECTRICAL CHARACTERISTICS, At Case Temperature (T.)=25 C unless otherwise specified LIMITS TEST RFM12N18 RFM12N20 CHARACTERISTIC SYMBOL CONDITIONS RFP12N18 RFP12N20 UNITS Min. | Max. | Min. | Max. Drain-Source Breakdown Voltage BVoss Io=1 MA 180 - 200 - Vv Vas=0 Gate-Threshold Voltage Vas(th) Vas=Vos 2 4 2 4 Vv Ip=1 mA Zero-Gate Voltage Drain Current Ipss Vos=145 V _- 1 _ _ Vos=160 V _ - _ 1 Tc=125C - uA Vos=145 V _ 50 _ _ Vos=160 V _ - - 50 Gate-Source Leakage Current lass Vas=+20 V - 100 - 100 nA Vos=0 Drain-Source On Voltage. Vos(on) lo=6 A. 1.6 1.5 Vas=10 V Vv Ip=12 A _ 3.6 - 3.6 Vas=10 Vv Static Drain-Source On Resistance 'ps(on) Ip=6 A - 0.25 - 0.25 Q Vas=10 V Forward Transconductance Gta" Vos=10 V 4 - 4 - mho Ip=6 A Input Capacitance Cus Vos=25 V - 1700 _ 1700 Output Capacitance Cons Vas=0 V =_ 600 = 600 pF Reverse-Transfer Capacitance Crs f=1 MHz - 300 _ 300 Turn-On Delay Time ta(on) Voo=100 V 35(typ); 50 |35(typ)} 50 Rise Time t lo=6 A 130(typ)| 200 [130(typ)} 200 ns Turn-Off Delay Time ta(off} Roen=Roe=50Q [i20(typ)| 180 fl20(typ)) 180 Fall Time tr Vas=10 V HOS(typ)| 160 105(typ)/ 160 Thermal Resistance Junction-to-Case Rgse RFM12N18, _ 1.25 _ 1.25 RFM12N20 oCAN RFP12N18, _ 1.67 _ 1.67 RFP12N20 SOURCE-DAAIN DIODE RATINGS AND CHARACTERISTICS LIMITS CHARACTERISTIC sMBOL | cottons | REM? | BRNO uns MIN, MAX. MIN. MAX. Diode Forward Voltage Vsp # Isp=6 A - 1.4 = 14 Vv Reverse Recovery Time te de 1100. Alus 325(typ) 325(typ) ns @pulsed: Pulse duration=300 ys max., duty cycle=2%. 1013875081 GE sotip state 9) DEM} 3875081 on1gis4 2f _. Standard Power MOSFETs wa q- / / RFM12N18, RFM12N20, RFP12N18, RFP12N20 TT 39-73 CASE TEMPERATURE (Tg) =259 (CURVES MUST BE DERATED Ye Tee ree aoe LINEARLY WITH INCREASE IN TEMPERATURE) 3 TION IN THIS AREA 1S LIMITED BY ryg (on) DRAIN CURRENT (Ip)-A . v (MAX) = 200V RFMIZN20/RFPIZN20 0 100 ORAIN-TO-SOURCE VOLTAGE (Vpg)-V 92CS-36495A1 Fig. 1 - Maximum sate operating areas for all types. POWER DISSIPATION (P7)w iso 92CS- 36450 JUNCTION (t-* ~ 928-36514 Fig. 2 - Power dissipation vs. case temperature derating curve Fig. 3 - Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. Tot SA. Veg= OV Yostlov PULSE TEST PULSE DURATION 80uS DUTY CYCLE S2% = SOURCE Poste 1] E Zz a e 3 3 f iu as g an ge a z5 2 6 JUNCTION TEMPERATURE mc GATE-TO-SOURCE VOLTAGE Wesh- Vv S2cs-365IS 9208-36491 Fig. 4 - Normalized drain-to-source on resistance as a function Fig. 5 - Typical transfer characteristics for all types. of junction temperature for all types. 102 = ee3875081 GE SOLID STATE Ol pe ff aa7soa1 0018160 9 I Standard Power MOSFETs Fig. 6 - Normalized switching waveforms forconstant gate-current Vos Vote o0 BYoss GATE SOURCE - VOLTAGE Ig (REF) = 1 ma Vag= 10 - 075Vngg OFS Voss. O50 Vpss 0 50 Uggs: 0.25 Voss 0 25 Voss: DRAIN SOURCE VOLTAGE ig IREFL ig (ACT) TIME Microseconds drive. Fig. 8 - Fig. 10 - Typical forward transconductance as a function of 3 ' = 2 w e 3 & 2 a zZ Ss 3 a z a & a < 5 a Vpstl0V 96) purse Test PULSE DURATION =60 uS DUTY CYCLE $< 2% i]-onms DRAIN~TO-SOURCE RESISTANCE | tpgton! 6 20, DRAIN CURRENT (Tp)A Von = Yoss. PL = 16 870 Yop =,Yoss ig {REF} igacn n2CS37082 9285-36494 Typical drain-to-source on resistance as a function of drain current for all types. Vps210 ORAIN CURRENT (Ip) A 9208-36409 @rain current for ail types. RFM12N18, RFM12N20, RFP12N18, RFP12N20 Vag volts DRAIN GURRENT(Ip)A 6 5 ORAIN- T0-SOURCE VOLTAGE (Vpg)-V 9208-36493 Fig, 7 - Typical saturation characteristics for all types. FREQUENCY (f} = 1 MHz i o A & w g Zz z = a DRAIN-TO~SQURCE VOLTAGE (Vpg)- 9208-36492 Fig. 9 - Capacitance as a function of drain-to-source voltage for ail types. 1652 D TO SCOPE KELVIN CONTACT 92CS-37374 Fig. 11 Switching Time Test Circuit 103