ES1AB thru ES1JB
NOTES : 1 .Re verse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0M Hz and applied reve rse v oltage of 4. 0V D C .
3.Thermal Resistance junction to Lead.
SURFACE M O UNT
SUPER FA ST RECTIFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
1.0
Ampere
MAXIMUM RATINGS AND ELECTRICA L CHARA CT ERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 1, 25-Mar-2002, KSGB09
Maximum Average Forward
Rectified Current
Peak F orwar d Surge Current
8.3ms single half sine-wave
super imposed on rated load (J EDEC METHOD)
Maximum Recurrent Peak Reverse Vol tage
Maximum RMS Voltag e
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reve rse Cu rrent
at Rated DC Blocking Voltage
1.0
30
0.92
Operating Temperature Range
Storage Temperature Range
Typ ical The rmal Resista nce (N ote 3)
Typi c al Jun ction Capa c itanc e (Note 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
ES1AB
Maximum Reverse Recovery Time (Note 1)
@TJ =25 C
@TJ=125 C
Typ ical Reverse Reco ve r y Time
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
T
RR
C
J
R
θ
JL
R
θ
JL
T
J
T
STG
50
35
50
ES1BB
100
70
100
ES1CB
150
105
150
ES1DB
200
140
200
ES1GB
400
280
400
ES1JB
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
ns
pF
C/W
C
C
5.0
200
25
20
10
25
-55 to + 150
-55 to + 150
30
35
SMB
All Dimen sio ns in mi llimete r
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
3.94 3.3 0
1.9 6 2.21
0.31 0.1 5
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
C
B
A
HEF
GD
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
ME CHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.003 ounces, 0.093 grams