Integrated Silicon Solution, Inc. 1
Rev. B
10/18/2016
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
IS43/46R83200F
IS43/46R16160F
IS43/46R32800F
FEATURES
• VDDandVDDQ:2.5V±0.2V
• SSTL_2compatibleI/O
• Double-dataratearchitecture;twodatatransfers
per clock cycle
• Bidirectional,datastrobe(DQS)istransmitted/
received with data, to be used in capturing data
at the receiver
• DQSisedge-alignedwithdataforREADsand
centre-alignedwithdataforWRITEs
• Differentialclockinputs(CKandCK)
• DLLalignsDQandDQStransitionswithCK
transitions
•
CommandsenteredoneachpositiveCKedge;data
anddatamaskreferencedtobothedgesofDQS
• Fourinternalbanksforconcurrentoperation
• DataMaskforwritedata.DMmaskswritedata
at both rising and falling edges of data strobe
• BurstLength:2,4and8
• BurstType:SequentialandInterleavemode
• ProgrammableCASlatency:2,2.5and3
• AutoRefreshandSelfRefreshModes
• AutoPrecharge
• TRASLockoutsupported(tRAP = tRCD)
OPTIONS
• Conguration(s):8Mx32,16Mx16,32Mx8
• Package(s):
144BallBGA(x32)
66-pinTSOP-II(x8,x16)and60BallBGA(x8,x16)
• Lead-freepackageavailable
• TemperatureRange:
Commercial(0°Cto+70°C)
Industrial(-40°Cto+85°C)
Automotive,A1(-40°Cto+85°C)
Automotive,A2(-40°Cto+105°C)
8Mx32, 16Mx16, 32Mx8
256Mb DDR SDRAM
OCTOBER 2016
DEVICE OVERVIEW
ISSI’s256-MbitDDRSDRAMachieveshighspeeddata
transfer using pipeline architecture and two data word
accessesperclockcycle.The268,435,456-bitmemory
arrayisinternallyorganizedasfourbanksof64Mbto
allowconcurrentoperations.ThepipelineallowsRead
and Write burst accesses to be virtually continuous, with
theoptiontoconcatenateortruncatethebursts.The
programmable features of burst length, burst sequence
andCASlatencyenablefurtheradvantages.Thedevice
isavailablein8-bit,16-bitand32-bitdatawordsize
InputdataisregisteredontheI/Opinsonbothedges
ofDataStrobesignal(s),whileoutputdataisreferenced
tobothedgesofDataStrobeandbothedgesofCLK.
CommandsareregisteredonthepositiveedgesofCLK.
AnAutoRefreshmodeisprovided,alongwithaSelf
Refreshmode.AllI/OsareSSTL_2compatible.
KEY TIMING PARAMETERS
Speed Grade -5 -6 Units
FCkMaxCL=3 200 167 MHz
FCkMaxCL=2.5 167 167 MHz
FCkMaxCL=2 133 133 MHz
ADDRESS TABLE
Parameter
8M x 32 16M x 16 32M x 8
Configuration
2Mx32x4
banks
4Mx16x4
banks
8Mx8x4
banks
BankAddress
Pins
BA0,BA1 BA0,BA1 BA0,BA1
Autoprecharge
Pins
A8/AP A10/AP A10/AP
RowAddress
4K(A0–A11) 8K(A0–A12) 8K(A0–A12)
Column
Address
512(A0–A7,
A9)
512(A0–A8) 1K(A0–A9)
RefreshCount
Com./Ind./A1
A2
4K/64ms
4K/16ms
8K/64ms
8K/16ms
8K/64ms
2 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
CK
CK
CKE
CS
RAS
CAS
WE
A11
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
MULTIPLEXER
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
DATA IN
BUFFER
DATA OUT
BUFFER
I/O 0-31
VDD/VDDQ
Vss/VssQ
12
14
12
9
12
12
2
12
9
32
32 32
32
512
(x 32)
4096
4096
4096
ROW DECODER
4096 MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROW
ADDRESS
BUFFER
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
4
DM0-DM3
DQS0-DQS3
4
2
FUNCTIONAL BLOCK DIAGRAM (x32)
Integrated Silicon Solution, Inc. 3
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
FUNCTIONAL BLOCK DIAGRAM (x16)
CK
CK
CKE
CS
RAS
CAS
WE
A12
A11
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
MULTIPLEXER
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
DATA IN
BUFFER
DATA OUT
BUFFER
I/O 0-15
VDD/VDDQ
Vss/VssQ
13
15
13
9
13
13
2
13
9
16
16 16
16
512
(x 16)
8192
8192
8192
ROW DECODER
8192 MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROW
ADDRESS
BUFFER
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
2
LDM, UDM
LDQS, UDQS
2
2
4 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATIONS
66 pin TSOP - Type II for x8
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
PIN DESCRIPTION: x8
A0-A12 RowAddressInput
A0-A9 Column Address Input
BA0,BA1 BankSelectAddress
DQ0–DQ7 DataI/O
CK,CK System Clock Input
CKE ClockEnable
CS Chip Select
CAS Column Address Strobe
Command
RAS RowAddressStrobe
Command
WE WriteEnable
DM DataWriteMask
DQS DataStrobe
VDD Power
VDDQ PowerSupplyforI/OPins
VSS Ground
VSSQ GroundforI/OPins
VREF SSTL_2referencevoltage
NC No Connection
Integrated Silicon Solution, Inc. 5
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATION
Package Code B: 60-ball FBGA (top view) for x8
(8mmx13mmBody,0.8mmBallPitch)
Top View
(BallsseenthroughthePackage)
PIN DESCRIPTION: x8
A0-A12 RowAddressInput
A0-A9 Column Address Input
BA0,BA1 BankSelectAddress
DQ0–DQ7 DataI/O
CK,CK System Clock Input
CKE ClockEnable
CS Chip Select
CAS Column Address Strobe
Command
RAS RowAddressStrobeCommand
WE WriteEnable
DM DataWriteMask
DQS DataStrobe
VDD Power
VDDQ PowerSupplyforI/OPins
VSS Ground
VSSQ GroundforI/OPins
VREF SSTL_2referencevoltage
NC No Connection
A
B
C
D
E
F
G
H
J
K
L
M
VSSQ DQ7
NC
NC
NC
NC
VDDQ DQ6
VDDQ
NC
NC
NC
VSSQ
VDDDQ0
DQ
1N
C
VDDQDQ2
DQ3 VSSQ
NC
NC
VDDQ
VDD
WE CAS
RAS
BA1 BA0
A0 A10/AP
A2 A1A5A6
A7
A8
A9
CS
VREF
A12
NC
A4 A3
DQ5
VDDQ
VSSQ
DQ4
CKE
A11
CK
VSSQ DQS
VSS DM
CK
VSS VDD
VSS
123789
x8 Device BallPattern
A
B
C
D
E
F
G
H
J
K
L
M
:BallExisting
:DepopulatedBall
TopView(See theballs through thePackage)
123456789
BGA Package Ball Pattern
Top View
6 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATIONS
66 pin TSOP - Type II for x16
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
PIN DESCRIPTION: x16
A0-A12 RowAddressInput
A0-A8 Column Address Input
BA0,BA1 BankSelectAddress
DQ0–DQ15 DataI/O
CK,CK System Clock Input
CKE ClockEnable
CS Chip Select
CAS Column Address Strobe
Command
RAS RowAddressStrobe
Command
WE WriteEnable
LDM,UDM DataWriteMask
LDQS,UDQS DataStrobe
VDD Power
VDDQ PowerSupplyforI/OPins
VSS Ground
VSSQ GroundforI/OPins
VREF SSTL_2referencevoltage
NC No Connection
Integrated Silicon Solution, Inc. 7
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATION
Package Code B: 60-ball FBGA (top view) for x16
(8mmx13mmBody,0.8mmBallPitch)
Top View
(BallsseenthroughthePackage)
PIN DESCRIPTION: x16
A0-A12 RowAddressInput
A0-A8 Column Address Input
BA0,BA1 BankSelectAddress
DQ0–DQ15 DataI/O
CK,CK System Clock Input
CKE ClockEnable
CS Chip Select
CAS Column Address Strobe
Command
RAS RowAddressStrobeCommand
WE WriteEnable
LDM,UDM DataWriteMask
LDQS,UDQS DataStrobe
VDD Power
VDDQ PowerSupplyforI/OPins
VSS Ground
VSSQ GroundforI/OPins
VREF SSTL_2referencevoltage
NC No Connection
A
B
C
D
E
F
G
H
J
K
L
M
VSSQ DQ15
DQ14 VDDQ DQ13
DQ12
VDDQ
DQ3
VSSQ
VDDDQ0
DQ
2D
Q1
VDDQDQ4
DQ6 VSSQ DQ5
LDQS DQ7VDDQ
LDMVDD
WE CAS
RAS
BA1 BA0
A0 A10/AP
A2 A1A5A6
A7
A8
A9
CS
VREF
A12
NC
A4 A3
DQ11
VDDQ
VSSQ
DQ9DQ10
DQ8
CKE
A11
CK
VSSQ UDQS
VSS UDM
CK
VSS VDD
VSS
123789
x16DeviceBallPattern
A
B
C
D
E
F
G
H
J
K
L
M
:BallExisting
:DepopulatedBall
TopView(See theballs through thePackage)
123456789
BGA Package Ball Pattern
Top View
8 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
A
B
C
D
E
F
G
H
J
K
L
M
DQS0
DQ4
DQ6
DQ7
DQ17
DQ19
DQS2
DQ21
DQ22
CAS
RAS
CS
DM0
VDDQ
DQ5
VDDQ
DQ16
DQ18
DM2
DQ20
DQ23
WE
NC
NC
VSSQ
NC
VSSQ
VDD
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDD
NC
BA0
DQ3
VDDQ
VSSQ
VSS
VSSQ
VSSQ
VSSQ
VSSQ
VSSQ
VSS
BA1
A0
DQ2
DQ1
VSSQ
VSSQ
VSS
VSS
VSS
VSS
VSS
A10
A2
A1
DQ0
VDDQ
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
A11
A3
DQ31
VDDQ
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
A9
A4
DQ29
DQ30
VSSQ
VSSQ
VSS
VSS
VSS
VSS
VSS
NC
A5
A6
DQ28
VDDQ
VSSQ
VSS
VSSQ
VSSQ
VSSQ
VSSQ
VSSQ
VSS
NC
A7
VSSQ
NC
VSSQ
VDD
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDD
CK
A8
DM3
VDDQ
DQ26
VDDQ
DQ15
DQ13
DM1
DQ11
DQ9
NC
CK
CKE
DQS3
DQ27
DQ25
DQ24
DQ14
DQ12
DQS1
DQ10
DQ8
NC
NC
VREF
1 2 3 4 5 6 7 8 9 10 11 12
Note:Vssballsinsidethedottedboxareoptionalforpurposesofthermaldissipation.
A0-A11 RowAddressInput
A0-A7,A9 Column Address Input
BA0,BA1 BankSelectAddress
DQ0–DQ31 DataI/O
CK,CK System Clock Input
CKE ClockEnable
CS Chip Select
CAS Column Address Strobe
Command
RAS RowAddressStrobe
Command
WE WriteEnable
DM0-DM3 DataWriteMask
DQS0-DQS3 DataStrobe
VDD Power
VDDQ PowerSupplyforI/OPins
VREF SSTL_2referencevoltage
VSS Ground
VSSQ GroundforI/OPins
NC No Connection
PIN DESCRIPTION: for x32
PIN CONFIGURATION
Package Code B: 144-ball FBGA (top view)
(12mmx12mmBody,0.8mmBallPitch)
Top View (Ballsseenthroughthepackage)
Integrated Silicon Solution, Inc. 9
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN FUNCTIONAL DESCRIPTIONS
Symbol Type
Description
CK,CK Input
Clock:CKandCK are differential clock inputs. All address and control input signals are sampled
onthecrossingofthepositiveedgeofCKandnegativeedgeofCK.Inputandoutputdatais
referencedtothecrossingofCKandCK(bothdirectionsofcrossing).Internalclocksignalsare
derivedfromCK/CK.
CKE Input
ClockEnable:CKEHIGHactivates,andCKELOWdeactivatesinternalclocksignals,anddevice
inputbuffersandoutputdrivers.TakingCKELOWprovidesPRECHARGEPOWER-DOWNand
SELFREFRESHoperation(allbanksidle),orACTIVEPOWERDOWN(rowACTIVEinany
bank).CKEissynchronousforallfunctionsexceptforSELFREFRESHEXIT,whichisachieved
asynchronously.Inputbuffers,excludingCK,CKandCKE,aredisabledduringpower-downand
self refresh mode which are contrived for low standby power consumption.
CS Input
ChipSelect:CSenables(registeredLOW)anddisables(registeredHIGH)thecommand
decoder.AllcommandsaremaskedwhenCSisregisteredHIGH.CSprovidesforexternalbank
selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS,
WE
Input
Command Inputs: RAS, CAS and WE(alongwithCS) define the command being entered.
DM:x8;
LDM,UDM:
x16;
DM0-DM3:
x32
Input
InputDataMask:DMisaninputmasksignalforwritedata.InputdataismaskedwhenDMis
sampledHIGHalongwiththatinputdataduringaWRITEaccess.DMissampledonbothedges
ofDQS.AlthoughDMpinsareinput-only,theDMloadingmatchestheDQandDQSloading.
Forx16devices,LDMcorrespondstothedataonDQ0-DQ7,UDMcorrespondstothedataon
DQ8-DQ15.
Forx32devices,DM0correspondstothedataonDQ0-DQ7,DM1correspondstothedataon
DQ8-DQ15,DM2correspondstothedataonDQ16-DQ23,andDM3correspondstothedataon
DQ24-DQ31.
BA0,BA1 Input
InputBankAddressInputs:BA0andBA1denetowhichbankanACTIVE,READ,WRITEor
PRECHARGEcommandisbeingapplied.
A [12:0] Input
AddressInputs:providetherowaddressforACTIVEcommands,andthecolumnaddressand
AUTOPRECHARGEbitforREAD/WRITEcommands,toselectonelocationoutofthememory
arrayintherespectivebank.TheaddressinputsalsoprovidetheopcodeduringaMODE
REGISTERSETcommand.A12isnotusedforx32.
DQ:
DQ0-DQ7:x8;
DQ0-DQ15:
x16
DQ0-DQ31:
x32
I/O
DataBus:Input/Output
DQS:x8:
LDQS,UDQS
x16:
DQS0-DQS3:
x32
I/O
DataStrobe:Outputwithreaddata,inputwithwritedata.Edge-alignedwithreaddata,centered
withwritedata.Usedtocapturewritedata.
Forx16device,LDQScorrespondstothedataonDQ0-DQ7,UDQScorrespondstothedataon
DQ8-DQ15.
Forx32device,DQS0correspondstothedataonDQ0-DQ7,DQS1correspondstothedataon
DQ8-DQ15,DQS2correspondstothedataonDQ16-DQ23,andDQS3correspondstothedata
onDQ24-DQ31.
NC --
No Connect: Should be left unconnected.
VREF Supply
SSTL_2referencevoltage.
VDDQ Supply
I/OPowerSupply.
VSSQ Supply
I/OGround.
VDD Supply
Power Supply.
VSS Supply Ground.
10 Integrated Silicon Solution, Inc.
Rev. B
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IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
COMMANDS TRUTH TABLES
Allcommands(addressandcontrolsignals)areregisteredonthepositiveedgeofclock(crossingofCKgoinghigh
andCKgoinglow).TruthTableshowsbasictimingparametersforallcommands.
NAME (FUNCTION) CS RAS CAS WE BA AP Address Notes
DESELECT(NOP) H X X X X X X 2
NOOPERATION(NOP) L H H H X X X 2
ACTIVE(selectbankandactivaterow) L L H H Valid X Row
READ(selectbankandcolumnandstartread
burst)
L H L H Valid L Column
READwithAP(readburstwithAutoPrecharge) L H L H Valid H Column 3
WRITE(selectbankandcolumnandstartwrite
burst)
L H L L Valid L Column
WRITEwithAP(writeburstwithAuto
Precharge)
L H L L Valid H Column 3
BURSTTERMINATE L H H L X X X 4
PRECHARGE(deactivaterowinselected
bank)
L L H L Valid L X 5
PRECHARGEALL(deactivaterowsinall
banks)
L L H L X H X 5
AUTOREFRESHorenterSELFREFRESH L L L H X X X 6,7,8
MODEREGISTERSET L L L L Valid Op-code 9
Notes:
1. All states and sequences not shown are illegal or reserved.
2. DESELECTandNOParefunctionallyinterchangeable.
3. Autoprechargeisnon-persistent.APHighenablesAutoPrecharge,whileAPLowdisablesAutoprecharge.
4. BurstTerminateappliestoonlyReadburstswithAutoPrechargedisabled.Thiscommandisundenedandshouldnotbe
usedforReadwithAutoPrechargeenabled,andforWritebursts.
5. IfAPisLow,bankaddressdetermineswhichbankistobeprecharged.IfAPisHigh,allbanksareprechargedandBA0-
BA1aredon’tcare.
6. ThiscommandisAUTOREFRESHifCKEisHigh,andSELFREFRESHifCKEislow.
7. AlladdressinputsandI/Oare‘don'tcare’exceptforCKE.Internalrefreshcounterscontrolbankandrowaddressing.
8. AllbanksmustbeprechargedbeforeissuinganAUTO-REFRESHorSELFREFRESHcommand.
9. BA0andBA1valueselectbetweenMRSandEMRS.
10.CKEisHIGHforallcommandsshownexceptSELFREFRESH.
TRUTH TABLE - DM Operations
FUNCTION DM DQ
WriteEnable L Valid
Write Inhibit H X
Note:Usedtomaskwritedata,providedcoincidentwiththe
corresponding data.
TRUTH TABLE - COMMANDS
x32 x16 x8
AutoPrecharge(AP) A8 A10 A10
RowAddress(RA) A0-A11 A0-A12 A0-A12
ColumnAddress(CA) A0-A7,
A9
A0-A8 A0-A9
ADDRESSING
Integrated Silicon Solution, Inc. 11
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IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
ADDRESSING
TRUTH TABLE - CKE
CKE n-1 CKE n Current State COMMAND n ACTION n NOTES
L L PowerDown X MaintainPowerDown
L L SelfRefresh X MaintainSelfRefresh
L H PowerDown NOPorDESELECT ExitPowerDown 6
L H SelfRefresh NOPorDESELECT ExitSelfRefresh 6,7
H L AllBanksIdle NOPorDESELECT PrechargePowerDownEntry 6
H L Bank(s)Active NOPorDESELECT ActivePowerDownEntry 6
H L AllBanksIdle AUTOREFRESH SelfRefreshentry
H H SeeTruthTables-Commands
Notes:
1. CKEnisthelogicstateofCKEatclockedgen;CKEn-1wasthestateofCKEatthepreviousclockedge.
2. CurrentstateisthestateofDDRimmediatelypriortoclockedgen.
3. COMMANDnisthecommandregisteredatclockedgen,andACTIONnistheresultofCOMMANDn.
4. Allstatesandsequencesnotshownareillegalorreserved.
5. CKEmustnotgoLOWduringaReadorWrite,andmuststayHIGHuntilaftertRPSt or twR, respectively.
6. DESELECTandNOParefunctionallyinterchangeable.
7.NOPsorDeselectsmustbeissuedforatleasttSnRafterSelf-Refreshexitbeforeanyothercommand.AfterDLLReset,at
least txSRDmustelapsebeforeanyReadcommandsoccur.
Basic Timing Parameters for Commands
NOTE: Input = A0 - An, BA0, BA1, CKE, CS, RAS, CAS, WE;
An = Address bus MSB
= Don't Care
tCL
tCH
tIS tIH
tCK
CK
CK
Input ValidValidValid
12 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
SIMPLIFIED STATE DIAGRAM
PREALL=PrechargeAllBanks
CKEL=EnterPowerDown
MRS=ModeRegisterSet
CKEH=ExitPowerDown
EMRS=ExtendedModeRegisterSet
ACT=Active
Self
Auto
Idle
MRS
EMRS
Row
Precharge
Write
Write
Write
Read
Read
Power
ACT
Read A
Read
REFS
REFSX
REFA
CKEL
MRS
CKEH
CKEH
CKEL
Write
Power
Applied
AutomaticSequence
Command Sequence
Read A
WriteA
Read
PREPRE
PRE
PRE
Refresh
Refresh
Active
Active
Power
Down Precharge
Power
Down
On
A
Read
A
Read
A
WriteA
BurstStop
PREALL
Precharge
PREALL
REFS=EnterSelfRefresh
Write A = Write with Autoprecharge
REFSX=ExitSelfRefresh
ReadA=ReadwithAutoprecharge
REFA=AutoRefresh
PRE=Precharge
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FUNCTIONAL DESCRIPTION
TheDDRSDRAMisahighspeedCMOS,dynamicrandom-accessmemoryinternallyconguredasaquad-bank
DRAM.The256Mbdevicescontains:268,435,456bits.
TheDDRSDRAMusesdoubledataratearchitecturetoachievehighspeedoperation.Thedoubledatarate
architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock
cycleattheI/Opins.AsinglereadorwriteaccessfortheDDRSDRAMeffectivelyconsistsofasingle2n-bitwide,
oneclockcycledatatransferattheinternalDRAMcoreandtwocorrespondingn-bitwide,one-half-clock-cycle
datatransfersattheI/Opins.ReadandwriteaccessestotheDDRSDRAMareburstoriented;accessesstartata
selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin
withtheregistrationofanACTIVEcommand,whichisthenfollowedbyaREADorWRITEcommand.Theaddress
bitsregisteredcoincidentwiththeACTIVEcommandareusedtoselectthebankandtherowtobeaccessed.The
addressbitsregisteredcoincidentwiththeREADorWRITEcommandareusedtoselectthebankandthestarting
column location for the burst access.
Priortonormaloperation,theDDRSDRAMmustbeinitialized.Thefollowingsectionprovidesdetailedinformation
covering device initialization, register definition, command description and device operation
INITIALIZATION
DDRSDRAMsmustbepoweredupandinitializedinapredenedmanner.Operationsproceduresotherthanthose
specified may result in undefined operation. If there is any interruption to the device power, the initialization routine
shouldbefollowed.Thestepstobefollowedfordeviceinitializationarelistedbelow.TheInitializationFlowdiagram
andtheInitializationFlowsequenceareshowninthefollowinggures.
TheModeRegisterandExtendedModeRegisterdonothavedefaultvalues.Iftheyarenotprogrammedduringthe
initializationsequence,itmayleadtounspeciedoperation.Theclockstopfeatureisnotavailableuntilthedevicehas
beenproperlyinitializedfromStep1through13.
•Step1:ApplyVDDbeforeoratthesametimeasVDDQ.
•Step2:CKEmustmaintainLVCMOSLowuntilVREFisstable.ApplyVDDQbeforeapplyingVTTandVREF.
•Step3:Theremustbeatleast200μsofvalidclocksbeforeanycommandmaybegiventotheDRAM.Duringthis
timeNOPorDESELECTcommandsmustbeissuedonthecommandbusandCKEshouldbebroughtHIGH.
•Step4:IssueaPRECHARGEALLcommand.
•Step5:ProvideNOPsorDESELECTcommandsforatleasttRPtime.
•Step6:IssueEMRScommand
•Step7:IssueMRScommand,loadthebasemoderegisterandtoresettheDLL.Setthedesiredoperatingmodes.
•Step8:ProvideNOPsorDESELECTcommandsforatleasttMRDtime.
•Step9:IssueaPRECHARGEALLcommand
•Step10:Issue2ormoreAUTOREFRESHcycles
•Step11:IssueMRScommandwiththeresetDLLbitdeactivatedtoprogramoperatingparameterswithoutresetting
theDLL
•Step12:ProvideNOPorDESELECTcommandsforatleasttMRDtime.
•Step13:TheDRAMhasbeenproperlyinitializedandisreadyforanyvalidcommand.
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Initialization Waveform Sequence
Notes:
1.VTTisnotapplieddirectlytothedevice,howevertVTDmustbegreaterthanorequaltozerotoavoiddevicelatch--up.
2.tMRDisrequiredbeforeanycommandcanbeapplied,and200cyclesofCKarerequiredbeforeanyexecutablecommand
can be applied
3.ThetwoAutoRefreshcommandsmaybemovedtofollowtherstMRSbutprecedethesecondPRECHARGEALLcom-
mand.
4.APisA8forx32,andA10forx8/x16.AddressisA0toA12exceptAP.
CKELVCMOS LOWLEVEL
DQ
BA0, BA1
200cycles of CK**
Extended
Mode
Register
SetLoad
Mode
Register,
ResetDLL
(withAP=H)
Load
Mode
Register
(withAP= L)
tMRD tMRDtMRDtRP tRFC tRFC
tIS
Power--up:
VDDand
CLKstable
T=200µs
High-- Z
tIH
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DM
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DQSHigh-- Z(
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Address
AP4
ALL BANKS
DON’TCARE
CK
CK
tCK
tCH tCL
VTT
(system1)
VREF
VDD
VDDQ
COMMAND MRSNOPPREEMRS AR
)
AR
tIS tIH
BA0=H,
BA1=L
tIS tIHtIStIH
BA0=L,
BA1=L
tIS tIH
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CODE CODE
tIStIH
CODE CODE
MRS
BA0=L,
BA1=L
CODE
CODE
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PRE
ALL BANKS
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tVDT≥ 0
22 2
Integrated Silicon Solution, Inc. 15
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
MODE REGISTER (MR) DEFINITION
TheModeRegisterisusedtodenethespecicmodeofoperationoftheDDRSDRAM.Thisdenitionincludes
thedenitionofaburstlength,abursttype,andaCASlatency.TheModeRegisterisprogrammedviatheMODE
REGISTERSETcommand(withBA0=0andBA1=0)andwillretainthestoredinformationuntilitisreprogrammed,
orthedevicelosespower.ModeRegisterbitsA0-A2specifytheburstlength,A3thetypeofburst(sequentialor
interleave),A4-A6theCASlatency,andA8DLLreset.Alogic0shouldbeprogrammedtoalltheundenedaddresses
bitstoensurefuturecompatibility.TheModeRegistermustbeloadedwhenallbanksareidleandnoburstsarein
progress,andthecontrollermustwaitthespeciedtimetMRDbeforeinitiatinganysubsequentoperation.Violating
eitheroftheserequirementswillresultinunspeciedoperation.Reservedstatesshouldnotbeused,asunknown
operation or incompatibility with future versions may result
MODE REGISTER
BA1 BA0 A121 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
A2 A1 A0 Burst Length
0 0 0 Reserved
0 0 1 2
0 1 0 4
0 1 1 8
1 0 0 Reserved
1 0 1 Reserved
1 1 0 Reserved
1 1 1 Reserved
AddressBus(Ax)
ModeReg.(Ex)
A3 Burst Type
0 Sequential
1 Interleave
A6 A5 A4 CAS Latency
0 0 0 Reserved
0 0 1 Reserved
0 1 0 2
0 1 1 3
1 0 0 Reserved
1 0 1 Reserved
1 1 0 2.5
1 1 1 Reserved
Notes:
1.A12isnotusedinx32andshouldbeignoredforthisoption.
2. A logic 0 should be programmed to all unused / undefined
address bits to ensure future compatibility.
BA1 BA0 Mode Register Denition
0 0 Program Mode Register
0 1 Program Extended Mode Register
1 0 Reserved
1 1 Reserved
A12 A11 A10 A9 A8 A7 DLL
0 0 0 0 0 0 Normal operation
0 0 0 0 1 0 Reset DLL
16 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
BURST LENGTH
ReadandwriteaccessestotheDDRSDRAMareburstoriented,withtheburstlengthbeingsetandtheburstorder
asinBurstDenition.Theburstlengthdeterminesthemaximumnumberofcolumnlocationsthatcanbeaccessedfor
agivenREADorWRITEcommand.Burstlengthsof2,4,or8locationsareavailableforboththesequentialandthe
interleaved burst types.
Notes:
1. Foraburstlengthoftwo,A1-Anselectsthetwodataelementblock;A0selectstherstaccesswithintheblock.
2. Foraburstlengthoffour,A2-Anselectsthefourdataelementblock;A0-A1selectstherstaccesswithintheblock.
3. Foraburstlengthofeight,A3-Anselectstheeightdataelementblock;A0-A2selectstherstaccesswithintheblock.
4. Wheneveraboundaryoftheblockisreachedwithinagivensequence,thefollowingaccesswrapswithintheblock.
BURST DEFINITION
Burst
Length
Starting Column Address Order of Accesses Within a Burst
Type = Sequential Type = Interleaved
2
A0
0 0-1 0-1
1 1-0 1-0
4
A1 A0
0 0 0-1-2-3 0-1-2-3
0 1 1-2-3-0 1-0-3-2
1 0 2-3-0-1 2-3-0-1
1 1 3-0-1-2 3-2-1-0
8
A2 A1 A0
0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
Integrated Silicon Solution, Inc. 17
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
WhenaREADorWRITEcommandisissued,ablockofcolumnsequaltotheburstlengthiseffectivelyselected.All
accesses for that burst take place within the block, meaning that the burst will wrap within the block if a boundary is
reached.
TheblockisuniquelyselectedbyA1-Anwhentheburstlengthissettotwo,byA2-Anwhentheburstlengthisset
to4,byA3-Anwhentheburstlengthissetto8.Anisthemostsignicantcolumnaddressbit,whichdependsifthe
deviceisx8,x16orx32.An=A9forx8,An=A8forx16andAn=A9forx32.Theprogrammedburstlengthappliesto
both read and write bursts.
BURST TYPE
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
bursttypeandisselectedviabitA3.
Theorderingofaccesseswithinaburstisdeterminedbytheburstlength,thebursttypeandthestartingcolumn
address.
READ LATENCY
TheREADlatency,orCASlatency,isthedelaybetweentheregistrationofaREADcommandandtheavailabilityof
the first piece of output data.
IfaREADcommandisregisteredataclockedgenandthelatencyis3clocks,therstdataelementwillbevalidat
n+2tCK+tAC.IfaREADcommandisregisteredataclockedgenandthelatencyis2clocks,therstdataelement
willbevalidatn+tCK+tAC.
OPERATING MODE
ThenormaloperatingmodeisselectedbyissuingaModeRegisterSetcommandwithbitsA7toAneachsettozero,
andbitsA0toA6settothedesiredvalues.ADLLresetisinitiatedbyissuingaModeRegisterSetcommandwith
bitsA7andA9toAneachsettozero,bitA8settoone,andbitsA0toA6settothedesiredvalues.AModeRegister
SetcommandissuedtoresettheDLLmustalwaysbefollowedbyaModeRegisterSetcommandtoselectnormal
operatingmode(A8=0).
AllothercombinationsofvaluesforA7toAnarereservedforfutureuseand/ortestmodes.Testmodesandreserved
states should not be used because unknown operation or incompatibility with future versions may result.
18 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
CAS LATENCIES
Integrated Silicon Solution, Inc. 19
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
EXTENDED MODE REGISTER (EMR) DEFINITION
TheExtendedModeRegistercontrolsfunctionsbeyondthosecontrolledbytheModeRegister;theseadditional
functionsincludeDLLenable/disable,andoutputdrivestrengthselection.TheExtendedModeRegisteris
programmedviatheMODEREGISTERSETcommand(withBA1=0andBA0=1)andwillretainthestoredinformation
untilitisreprogrammed,orthedevicelosespower.TheExtendedModeRegistermustbeloadedwhenallbanks
areidleandnoburstsareinprogress,andthecontrollermustwaitthespeciedtimetMRDbeforeinitiatingany
subsequentoperation.Violatingeitheroftheserequirementswillresultinunspeciedoperation.Reservedstates
should not be used, as unknown operation or incompatibility with future versions may result.
DLL Enable/Disable
TheDLLmustbeenabledfornormaloperation.DLLenableisrequiredduringpower-upinitialization,andupon
returningtonormaloperationafterhavingdisabledtheDLLforthepurposeofdebugorevaluation(uponexitingSelf
RefreshMode,theDLLisenabledautomatically).AnytimetheDLLisenabledaDLLResetmustfollowand200clock
cycles must occur before any executable command can be issued.
OUTPUT DRIVE STRENGTH (DS)
ThenormaldrivestrengthforalloutputsisspeciedtobeSSTL_2,ClassII.ThisDRAMalsosupportsareduced
driver strength option, intended for lighter load and/or point-to-point environments.
EXTENDED MODE REGISTER
BA1 BA0 A122 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
A0 DLL
0 Enable
1 Disable
AddressBus(Ax)
Ext.ModeReg.(Ex)
A6 A1 Drive Strength
0 0 Full (100%)
0 1 Weak (60%)
1 0 Reserved
1 1 Matched (30%)
NOTES:
1. A logic 0 should be programmed to all unused/undefined ad-
dress bits to ensure future compatibility
2.A12isnotusedforx32andshouldbeignoredforthisoption.
BA1 BA0 Mode Register Denition
0 0 Program Mode Register
0 1 Program Extended Mode Register
1 0 Reserved
1 1 Reserved
Reserved(1) Reserved(1)
20 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
Absolute Maximum Rating
Parameter Symbol Value Unit
VoltageonanypinrelativetoVSS Vin,Vout -1.0~3.6 V
VoltageonVDD&VDDQsupplyrelativetoVSS VDD,VDDq -1.0~3.6 V
Storage temperature TStg -55~+150 oC
Power dissipation PD1.5 W
Short circuit current IoS 50 mA
Note:
PermanentdevicedamagemayoccurifABSOLUTEMAXIMUMRATINGSareexceeded.
Functionaloperationshouldberestrictedtorecommendoperationcondition.
Exposuretohigherthanrecommendedvoltageforextendedperiodsoftimecouldaffectdevicereliability
AC/DC Electrical Characteristics and Operating Conditions
Recommendedoperatingconditions(VoltagereferencedtoVSS=0V;TA=0to70
o
CforCommercial,TA=-40
o
Cto+85
o
C for Industrial and A1,
TA=-40
o
Cto+105
o
C for A2)
Parameter Symbol Min Max Unit Note
Supplyvoltage(withanominalVDDof2.5V) VDD 2.3 2.7 V
I/OSupplyvoltage(withanominalVDDof2.5V) VDDq 2.3 2.7 V
I/OReferencevoltage VRef 0.49*VDDQ 0.51*VDDQ V 1
I/OTerminationvoltage(system) Vtt VREF-0.04 VREF+0.04 V 2
Input logic high voltage Vih(DC)VREF+0.15 VDDQ+0.3 V
Input logic low voltage Vil(DC)-0.3 VREF-0.15 V
InputVoltageLevel,CLKandCLKinputs Vin(DC)-0.3 VDDQ+0.3 V
InputDifferentialVoltage,CLKandCLKinputs ViD(DC)0.36 VDDQ+0.6 V 3
V-IMatching:PulluptoPulldownCurrentRatio Vi(Ratio) 0.71 1.4 – 4
Input leakage current Il-2 2 uA
Outputleakagecurrent Ioz -5 5 uA
OutputHighCurrent(Normalstrengthdriver);VOUT=VTT+0.84V Ioh -16.8 –mA
OutputLowCurrent(Normalstrengthdriver);VOUT=VTT-0.84V Iol 16.8 –mA
OutputHighCurrent(Halfstrengthdriver);VOUT=VTT+0.45V IohR -9 –mA
OutputLowCurrent(Halfstrengthdriver);VOUT=VTT-0.45V IolR 9–mA
AmbientOperatingTemperature
Commercial
Industrial
A1
A2
TA
TA
TA
TA
0
-40
-40
-40
+70
+85
+85
+105
o
C
o
C
o
C
o
C
Note :
1.VREFisexpectedtobeequalto0.5*VDDQofthetransmittingdevice,andtotrackvariationsinthedclevelofsame.Peak-to
peaknoiseonVREFmaynotexceed+/-2%ofthedcvalue.
2.VTTisnotapplieddirectlytothedevice.VTTisasystemsupplyforsignalterminationresistors,isexpectedtobesetequalto
VREF,andmusttrackvariationsintheDClevelofVREF
3.VIDisthemagnitudeofthedifferencebetweentheinputlevelonCLKandtheinputlevelonCLK.
4.Theratioofthepullupcurrenttothepulldowncurrentisspeciedforthesametemperatureandvoltage,overtheentiretem-
peratureandvoltagerange,fordevicedraintosourcevoltagesfrom0.25Vto1.0V.Foragivenoutput,itrepresentsthemaxi-
mumdifferencebetweenpullupandpulldowndriversduetoprocessvariation.Thefullvariationintheratioofthemaximumto
minimumpullupandpulldowncurrentwillnotexceed1.7fordevicedraintosourcevoltagesfrom0.1to1.0.
Integrated Silicon Solution, Inc. 21
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
CAPACITANCE CHARACTERISTICS(1, 2)
(VDD =VDDq=2.5V+0.2V,unlessotherwisenoted)
Symbol Parameter Test Condition Limits Units
Min Max
CI(A) Input Capacitance, address pin VI=1.25v
f=100MHz
VI=25mVrms
1.3 3 pF
CI(C) Input Capacitance, control pin 1.3 3 pF
CI(K) InputCapacitance,CLKpin 24 pF
CI/O I/OCapacitance,I/O,DQS,DMpin 3 5 pF
Notes:
1.Thisparameterischaracterized.
2.Conditions:Frequency=100MHz;Vout(DC)=VDD/2;Vout(peak-to-peak)=0.2V;VRef=Vss.
Package Substrate Theta-ja
(Airow = 0m/s)
Theta-ja
(Airow = 1m/s)
Theta-ja
(Airow = 2m/s)
Theta-jc Units
TSOP2(66) 4-layer 73.3 66.3 62.4 12.2 C/W
BGA(60) 4-layer 43.5 39.9 37.7 12.2 C/W
BGA(144) 4-layer TBD TBD TBD TBD C/W
THERMAL RESISTANCE
22 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
IDD Specification Parameters and Test Conditions: x8, x16
(VDD=VDDq=2.5V±0.2V,Vss=VssQ=0V,OutputOpen,unlessotherwisenoted)
Symbol Parameter/ Test Condition -5 -6 Units
IDD0 Operatingcurrentforonebankactive-precharge;tRC=tRC(min);
tCK=tCK(min);DQ,DMandDQSinputschangingonceperclock
cycle; address and control inputs changing once every two clock
cycles; CS = high between valid commands.
90 75 mA
IDD1 Operatingcurrentforonebankoperation;onebankopen,BL=4,
tRC=tRC(min),tCK=tCK(min),Iout=0mA,Addressandcontrol
inputs changing once per clock cycle.
110 95 mA
IDD2P Precharge power-down standby current; all banks idle; power-down
mode;CKEVIL(max);tCK=tCK(min);VIN=VREFforDQ,DQSand
DM
30 30 mA
IDD2F Prechargeoatingstandbycurrent;CSVIH(min);allbanksidle;CKE
VIH(min);tCK=tCK(min);addressandothercontrolinputschanging
onceperclockcycle;VIN=VREFforDQ,DQSandDM
80 70 mA
IDD3P Active power-down standby current; one bank active; power-down
mode;CKEVIL(max);tCK=tCK(min);VIN=VREFforDQ,DQSand
DM
30 30 mA
IDD3N Activestandbycurrent;CSVIH(min);CKEVIH(min);onebank
active;tRC=tRAS(max);tCK=tCK(min);DQ,DQSandDMinputs
changing twice per clock cycle; address and other control inputs
changing once per clock cycle
80 70 mA
IDD4R Operatingcurrentforburstread;burstlength=2;reads;continuous
burst; one bank active; address and control inputs changing once per
clockcycle;tCK=tCK(min);50%ofdatachangingoneverytransfer;
lOUT=0mA
190 160 mA
IDD4W Operatingcurrentforburstwrite;burstlength=2;writes;continuous
burst; one bank active address and control inputs changing once per
clockcycle;tCK=tCK(min);DQ,DMandDQSinputschangingtwice
perclockcycle,50%ofinputdatachangingateverytransfer
200 170 mA
IDD5 Autorefreshcurrent;tRC=tRFC(min); 110 110 mA
IDD6 Selfrefreshcurrent;CKE0.2V; 6 6 mA
IDD7 Operatingcurrentforfourbankoperation;fourbankinterleaving
READs(BL=4)withautoprecharge;tRC=tRC(min),tCK=tCK(min);
AddressandcontrolinputschangeonlyduringACTIVE,READ,or
WRITEcommands
220 190 mA
Integrated Silicon Solution, Inc. 23
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
IDD Specification Parameters and Test Conditions: x32
(VDD=VDDq=2.5V±0.2V,Vss=VssQ=0V,OutputOpen,unlessotherwisenoted)
Symbol Parameter/ Test Condition -5 -6 Units
IDD0 Operatingcurrentforonebankactive-precharge;tRC=tRC(min);
tCK=tCK(min);DQ,DMandDQSinputschangingonceperclock
cycle; address and control inputs changing once every two clock
cycles; CS = high between valid commands.
130 105 mA
IDD1 Operatingcurrentforonebankoperation;onebankopen,BL=4,
tRC=tRC(min),tCK=tCK(min),Iout=0mA,Addressandcontrol
inputs changing once per clock cycle.
160 140 mA
IDD2P Precharge power-down standby current; all banks idle; power-down
mode;CKEVIL(max);tCK=tCK(min);VIN=VREFforDQ,DQSand
DM
35 35 mA
IDD2F Prechargeoatingstandbycurrent;CSVIH(min);allbanksidle;CKE
VIH(min);tCK=tCK(min);addressandothercontrolinputschanging
onceperclockcycle;VIN=VREFforDQ,DQSandDM
90 80 mA
IDD3P Active power-down standby current; one bank active; power-down
mode;CKEVIL(max);tCK=tCK(min);VIN=VREFforDQ,DQSand
DM
35 35 mA
IDD3N Activestandbycurrent;CSVIH(min);CKEVIH(min);onebank
active;tRC=tRAS(max);tCK=tCK(min);DQ,DQSandDMinputs
changing twice per clock cycle; address and other control inputs
changing once per clock cycle
90 80 mA
IDD4R Operatingcurrentforburstread;burstlength=2;reads;continuous
burst; one bank active; address and control inputs changing once per
clockcycle;tCK=tCK(min);50%ofdatachangingoneverytransfer;
lOUT=0mA
260 210 mA
IDD4W Operatingcurrentforburstwrite;burstlength=2;writes;continuous
burst; one bank active address and control inputs changing once per
clockcycle;tCK=tCK(min);DQ,DMandDQSinputschangingtwice
perclockcycle,50%ofinputdatachangingateverytransfer
280 240 mA
IDD5 Autorefreshcurrent;tRC=tRFC(min); 180 180 mA
IDD6 Selfrefreshcurrent;CKE0.2V; 6 6 mA
IDD7 Operatingcurrentforfourbankoperation;fourbankinterleaving
READs(BL=4)withautoprecharge;tRC=tRC(min),tCK=tCK(min);
AddressandcontrolinputschangeonlyduringACTIVE,READ,or
WRITEcommands
340 300 mA
24 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PARAMETER SYMBOL -5 -6 UNITS
MIN MAX MIN MAX
DQoutputaccesstimeforCLK,/CLK tAC -0.7 0.7 -0.7 0.7 ns
DQSoutputaccesstimeforCLK,/CLK tDQSCK -0.6 0.6 -0.6 0.6 ns
CLKhigh-levelwidth tCH 0.45 0.55 0.45 0.55 tCK
CLKlow-levelwidth tCL 0.45 0.55 0.45 0.55 tCK
CLKhalfperiod tHP min
(tCL,tCH) –min
(tCL,tCH) –ns
CLKcycletimeCL=3 tCK(3) 5 10 6 10 ns
CL=2.5 tCK(2.5) 6 10 6 10 ns
CL=2 tCK(2) 7.5 10 7.5 10 ns
DQandDMinputholdtime tDH 0.4 – 0.45 – ns
DQandDMinputsetuptime tDS 0.4 – 0.45 – ns
Control&Addressinputpulsewidth(foreach
input) tIPW 2.2 –2.2 –ns
DQandDMinputpulsewidth(foreachinput) tDIPW 1.75 – 1.75 – ns
DQ&DQShigh-impedancetimefromCLK,/CLK tHZ – 0.7 – 0.7 ns
DQ&DQSlow--impedancetimefromCLK,/CLK tLZ -0.7 – -0.7 – ns
DQS--DQSkew,DQStolastDQvalid,pergroup,
per access tDQSQ – 0.4 – 0.45 ns
DQ/DQSoutputholdtimefromDQS tQH tHP-tQHS – tHP-
tQHS –ns
DataHoldSkewFactor tQHS – 0.5 – 0.55 ns
WritecommandtorstDQSlatchingtransition tDQSS 0.72 1.28 0.75 1.28 tCK
DQSinputhighpulsewidth tDQSH 0.35 – 0.35 – tCK
DQSinputlowpulsewidth tDQSL 0.35 – 0.35 – tCK
DQSfallingedgetoCLKsetuptime tDSS 0.2 –0.2 – tCK
DQSfallingedgeholdtimefromCLK tDSH 0.2 –0.2 – tCK
MODEREGISTERSETcommandcycletime tMRD 2–2– tCK
Write preamble setup time tWPRES 0–0–ns
Write postamble tWPST 0.4 0.6 0.4 0.6 tCK
Write preamble tWPRE 0.25 – 0.25 – tCK
AddressandControlinputholdtime(fastslew
rate) tIHF 0.6 – 0.75 – ns
AddressandControlinputsetuptime(fastslew
rate) tISF 0.6 – 0.75 – ns
AddressandControlinputholdtime(slowslew
rate) tIH 0.7 – 0.8 -– ns
AddressandControlinputsetuptime(slowslew
rate) tIS 0.7 – 0.8 –ns
Readpreamble tRPRE 0.9 1.1 0.9 1.1 tCK
Readpostamble tRPST 0.4 0.6 0.4 0.6 tCK
ACTIVEtoPRECHARGEcommand tRAS 40 70,000 42 120,000 ns
AC TIMING REQUIREMENTS
AbsoluteSpecications(VDD,VDDQ=+2.5V±0.2V)
Integrated Silicon Solution, Inc. 25
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PARAMETER SYMBOL -5 -6 UNITS
MIN MAX MIN MAX
ACTIVEtoACTIVE/AutoRefreshcommand
period tRC 55 – 60 –ns
AutoRefreshtoActive/Auto tRFC 70 – 72 – ns
ACTIVEtoREADorWRITEdelay tRCD 15 – 15 – ns
PRECHARGEcommandperiod tRP 15 – 15 – ns
ActivetoAutoprechargeDelay tRAP 15 – 15 – ns
ACTIVEbankAtoACTIVEbankBcommand tRRD 10 –12 –ns
Write recovery time tWR 15 – 15 – ns
AutoPrechargewriterecovery+prechargetime tDAL tWR+tRP – tWR+tRP – tCK
InternalWritetoReadCommandDelay tWTR 2–1– tCK
Exitselfrefreshtonon-READ tXSNR 70 – 75 – ns
ExitselfrefreshtoREADcommand tXSRD 200 –200 – tCK
AveragePeriodicRefreshInterval
(x8/x16)
TA ≤85ºC tREFI – 7.8 – 7.8 ms
TA>85ºC,
A2 only
tREFI – 1.9 –1.9 ms
AveragePeriodicRefreshInterval
(x32)
TA ≤85ºC tREFI – 15.6 – 15.6 ms
TA>85ºC,
A2 only
tREFI – 3.9 – 3.9 ms
AC TIMING REQUIREMENTS
AbsoluteSpecications(VDD,VDDQ=+2.5V±0.2V)
Output Load Condition
DQ
Output Timing
Measurement
Reference Point
VREF
VREF
DQS
V
OUT
V
REF
30pF
50
V
TT
=V
REF
Zo=50
Ω
Ω
26 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
Notes:
1.AllvoltagesreferencedtoVss.
2.TestsforACtiming,IDD,andelectrical,ACandDCcharacteristics,maybeconductedatnominalreference/supplyvoltage
levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
3.ACtimingandIDDtestsmayuseaVILtoVIHswingofupto1.5Vinthetestenvironment,butinputtimingisstillreferencedto
VREF(ortothecrossingpointforCK//CK),andparameterspecicationsareguaranteedforthespeciedACinputlevelsun-
dernormaluseconditions.Theminimumslewratefortheinputsignalsis1V/nsintherangebetweenVIL(AC)andVIH(AC).
4.TheACandDCinputlevelspecicationsareasdenedintheSSTL_2Standard(i.e.thereceiverwilleffectivelyswitchasa
result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above
(below)theDCinputLOW(HIGH)level.
5.VREFisexpectedtobeequalto0.5*VddQofthetransmittingdevice,andtotrackvariationsintheDClevelofthesame.
Peak-to-peaknoiseonVREFmaynotexceed+2%oftheDCvalue.
6.VTTisnotapplieddirectlytothedevice.VTTisasystemsupplyforsignalterminationresistors,isexpectedtobesetequalto
VREF,andmusttrackvariationsintheDClevelofVREF.
7.VIDisthemagnitudeofthedifferencebetweentheinputlevelonCLKandtheinputlevelon/CLK.
8.ThevalueofVIXisexpectedtoequal0.5*VddQofthetransmittingdeviceandmusttrackvariationsintheDClevelofthe
same.
9.IDDspecicationsaretestedafterthedeviceisproperlyinitialized.
10.TheCLK//CLKinputreferencelevel(fortimingreferencedtoCLK//CLK)isthepointatwhichCLKand/CLKcross;theinput
referencelevelforsignalsotherthanCLK//CLK,isVREF.
11.InputsarenotrecognizedasvaliduntilVREFstabilizes.Exception:duringtheperiodbeforeVREFstabilizes,CKE<0.3VddQ
isrecognizedasLOW.
12.tHZandtLZtransitionsoccurinthesameaccesstimewindowsasvaliddatatransitions.Theseparametersarenotrefer-
encedtoaspecicvoltagelevel,butspecifywhenthedeviceoutputisnolongerdriving(HZ),orbeginsdriving(LZ).
13.ThemaximumlimitfortWPRESisnotadevicelimit.Thedevicewilloperatewithagreatervalueforthisparameter,butsys-
temperformance(busturnaround)willdegradeaccordingly.
14.ThespecicrequirementisthatDQSbevalid(HIGH,LOW,oratsomepointonavalidtransition)onorbeforethisCLK
edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When no writes
werepreviouslyinprogressonthebus,DQSwillbetransitioningfromHigh-ZtologicLOW.Ifapreviouswritewasinprog-
ress,DQScouldbeHIGH,LOW,ortransitioningfromHIGHtoLOWatthistime,dependingontDQSS.
15.AmaximumofeightAUTOREFRESHcommandscanbepostedtoanygivenDDRSDRAMdevice.
16.tXPRDshouldbe200tCLKintheconditionoftheunstableCLKoperationduringthepowerdownmode.
17.Forcommand/addressandCK&/CKslewrate>1.0V/ns.
18.Forslewrateslessthan1V/nsandgreaterthanorequalto0.5V/ns.Iftheslewrateislessthan0.5V/ns,timingmustbe
derated: tiShasanadditional50pspereach100mV/nsreductioninslewratefromthe500mV/ns.tih has nothing added. If
theslewrateexceeds4.5V/ns,functionalityisuncertain.Foroperationat166mHzorfaster,slewratesmustbegreaterthan
orequalto0.5V/ns.
19.Tomaintainavalidlevel,thetransitioningedgeoftheinputmust:
a.SustainaconstantslewratefromthecurrentAClevelthroughtothetargetAClevel,VIL(AC)orVIH(AC).
b.ReachatleastthetargetAClevel.
c.AftertheACtargetlevelisreached,continuetomaintainatleastthetargetDClevel,VIL(DC)orVIH(DC).
20.VIHovershoot:VIH,max=VDDO+1.5Vforapulsewidth≤3ns,andthepulsewidthcannotbegreaterthan1/3ofthecycle
rate.VIIundershoot:VIL,min=-1.5Vforapulsewidth≤3ns,andthepulsewifthcannotbegreaterthan1/3ofthecyclerate.
21.Min(tCL,tCH)referstothesmalleroftheactualclocklowtimeandtheactualclockhightimeasprovidedtothedevice.
22.ForA2temperaturegradewithTA > 85°C:IDD2F,IDD3N,andIDD7arederatedto10%abovethesevalues;IDD2Pand
IDD6arederatedto20%abovethesevalues.
Parameter/Condition Symbol Min Max Units
Inputhigh(logic1)voltage VIH(AC) VREF+0.310 1.5 V
Inputlow(logic0)voltage VIL(AC) -1.5 V
I/Oreferencevoltage VREF(AC) 0.51xVDDQ 4.5 V-ns
AC Input Operating Conditions
(VDD=VDDQ=2.5±0.2V,VSS=VSSQ=0V,outputopen,unlessotherwisenoted.)
Integrated Silicon Solution, Inc. 27
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IS43/46R16160F, IS43/46R32800F
OUTPUT SLEW RATE CHARACTERISTICS
Slew Rate Characteristic Typical Range
(V/ns)
Min
(V/ns)
Max
(V/ns)
PullupSlewRate 1.2-2.5 0.7 5.0
PulldownSlewRate 1.2-2.5 0.7 5.0
AC OVERSHOOT/UNDERSHOOT SPECIFICATION FOR ADDRESS AND CONTROL PINS
Parameter Max Units
Peak amplitude allowed for overshoot 1.5 V
Peak amplitude allowed for undershoot 1.5 V
AreabetweentheovershootsignalandVDDmustbelessthanorequalto(seegurebelow) 4.5 V-ns
AreabetweentheundershootsignalandGNDmustbelessthanorequalto(seegurebelow) 4.5 V-ns
OVERSHOOT/UNDERSHOOT SPECIFICATION FOR DATA, STROBE, AND MASK PINS
Parameter Max Units
Peak amplitude allowed for overshoot 1.2 V
Peak amplitude allowed for undershoot 1.2 V
AreabetweentheovershootsignalandVDDmustbelessthanorequalto(seegurebelow) 2.4 V-ns
AreabetweentheundershootsignalandGNDmustbelessthanorequalto(seegurebelow) 2.4 V-ns
AddressandControlACOvershootandUndershootDenition
DQ/DM/DQSACOvershootandUndershootDenition
Ground
VDD
-3
-2
-1
+1
+2
+3
+4
+5
0
0123456
Time (ns)
Volts
(V)
Undershoot
Overshoot
Max.amplitude =1.5 V
Max. area =4.5 V-ns
VDD
-3
-2
-1
+1
+2
+3
+4
+5
0
0123456
Volts
(V)
Undershoot
Overshoot
Max. amplitude =1.2 V
Time (ns)
Ground
Max. area =2.4 V--ns
28 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
32Mx8 ORDERING INFORMATION - VDD = 2.5V
Commercial Range: 0°C to +70°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS43R83200F-5TL 66-pinTSOP-II,Lead-free
166MHz 6 IS43R83200F-6TL 66-pinTSOP-II,Lead-free
Industrial Range: -40°C to +85°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS43R83200F-5TLI 66-pinTSOP-II,Lead-free
166MHz 6 IS43R83200F-6TLI 66-pinTSOP-II,Lead-free
Automotive (A2) Range: -40°C to +105°C
Frequency Speed (ns) Order Part No. Package
166MHz 6 IS46R83200F-6BLA2 60-ballBGA,Lead-free
166MHz 6 IS46R83200F-6BA2 60-ballBGA,Lead-free
Integrated Silicon Solution, Inc. 29
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
16Mx16 ORDERING INFORMATION - VDD = 2.5V
Commercial Range: 0°C to +70°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS43R16160F-5BL 60-ballBGA,Lead-free
IS43R16160F-5TL 66-pinTSOP-II,Lead-free
166MHz 6 IS43R16160F-6BL 60-ballBGA,Lead-free
IS43R16160F-6TL 66-pinTSOP-II,Lead-free
Industrial Range: -40°C to +85°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS43R16160F-5BLI 60-ballBGA,Lead-free
IS43R16160F-5BI 60-ballBGA
IS43R16160F-5TLI 66-pinTSOP-II,Lead-free
166MHz 6 IS43R16160F-6BLI 60-ballBGA,Lead-free
IS43R16160F-6BI 60-ballBGA
IS43R16160F-6TLI 66-pinTSOP-II,Lead-free
Automotive (A1) Range: -40°C to +85°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS46R16160F-5BLA1 60-ballBGA,Lead-free
IS46R16160F-5TLA1 66-pinTSOP-II,Lead-free
166MHz 6 IS46R16160F-6BLA1 60-ballBGA,Lead-free
IS46R16160F-6TLA1 66-pinTSOP-II,Lead-free
8Mx32 ORDERING INFORMATION - VDD = 2.5V
Commercial Range: 0°C to +70°C
Frequency Speed (ns) Order Part No. Package
 200MHz 5 IS43R32800F-5BL 144-ballBGA,Lead-free
166MHz 6 IS43R32800F-6BL 144-ballBGA,Lead-free
Industrial Range: -40°C to +85°C
Frequency Speed (ns) Order Part No. Package
200MHz 5 IS43R32800F-5BLI 144-ballBGA,Lead-free
IS43R32800F-5BI 144-ballBGA
166MHz 6 IS43R32800F-6BLI 144-ballBGA,Lead-free
Automotive (A1) Range: -40°C to +85°C
Frequency Speed (ns) Order Part No. Package
166MHz 6 IS46R32800F-6BLA1 144-ballBGA,Lead-free
Automotive (A2) Range: -40°C to +105°C
Frequency Speed (ns) Order Part No. Package
166MHz 6 IS46R16160F-6BLA2 60-ballBGA,Lead-free
IS46R16160F-6TLA2 66-pinTSOP-II,Lead-free
30 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
Θ
NOTE :
4. Formed leads shall be planar with respect to one another within 0.1mm
3. Dimension b does not include dambar protrusion/intrusion.
2. Dimension D and E1 do not include mold protrusion .
at the seating plane after final test.
1. Controlling dimension : mm
Package Outline 10/04/2006
Integrated Silicon Solution, Inc. 31
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
Mini Ball Grid Array
Package Code: B (60-Ball) 8mm x 13mm
32 Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F