2N3771 2N3772 (R) HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3772 60 V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV Collector-Emitter Voltage (V BE = -1.5V) 50 80 V V CBO Collector-Base Voltage (I B = 0) 50 100 V V EBO Emitter-Base Voltage (I C = 0) 5 7 V IC I CM Collector Current 30 20 A Collector Peak Current 30 30 A Base Current 7.5 5 A I BM Base Peak Current 15 15 A P tot Total Dissipation at T c 25 o C Storage Temperature IB T stg December 2000 150 -65 to 200 W o C 1/4 2N3771/2N3772 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C 2 5 10 mA mA mA I CEO Collector Cut-off Current (I B = 0) for 2N3771 for 2N3772 V CB = 30 V V CB = 50 V 10 10 mA mA I CBO Collector Cut-off Current (I E = 0) for 2N3771 for 2N3772 V CB = 50 V V CB = 100 V 4 5 mA mA I EBO Emitter Cut-off Current (I C = 0) for 2N3771 for 2N3772 V CB = 5 V V CB = 7 V 5 5 mA mA V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 0.2 A for 2N3771 for 2N3772 40 60 V V V CEV(sus) Collector-Emitter Sustaining Voltage (V EB = -1.5V) R BE = 100 I C = 0.2 A for 2N3771 for 2N3772 50 80 V V V CER(sus) Collector-Emitter Sustaining Voltage (R BE = 100 ) I C = 0.2 A for 2N3771 for 2N3772 45 70 V V V CE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A IB = 1 A IB = 4 A for 2N3771 I C = 15 A V CE = 4 V for 2N3772 I C = 10 A V CE = 4 A for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A 2 4 V V 1.4 4 V V 2.7 V 2.7 V V CE = 4 V V CE = 4 V 15 5 60 V CE = 4 V V CE = 4 V 15 5 60 h FE Small Signal Current Gain IC = 1 A V CE = 4 V f = 1 KHz 40 fT Transition frequency IC = 1 A V CE = 4 V f = 50 KHz 0.2 MHz I s/b Second Breakdown Collector Current V CE = 25 V t = 1 s (non repetitive) 6 A Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 I B = 1.5 A IB = 6 A 2N3771/2N3772 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N3771/2N3772 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4