TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
LOW I
Q
, SINGLE BOOST, DUAL SYNCHRONOUS BUCK CONTROLLER
Check for Samples: TPS43330-Q1,TPS43332-Q1
1FEATURES
2 Qualified for Automotive Applications Separate Enable Inputs (ENA, ENB)
AEC-Q100 Test Guidance With the Following Frequency Spread Spectrum (TPS43332)
Results: Selectable Forced Continuous Mode or
Device Temperature Grade 1: –40°C to Automatic Low-Power Mode at Light Loads
125°C Ambient Operating Temperature Sense Resistor or Inductor DCR Sensing
Device HBM ESD Classification Level H2 Out-of-Phase Switching Between Buck
Device CDM ESD Classification Level C2 Channels
Two Synchronous Buck Controllers Peak Gate-Drive Current 1.5 A
One Pre-Boost Controller Thermally Enhanced 38-Pin HTSSOP (DAP)
PowerPAD™ Package
Input Range up to 40 V, (Transients up to 60
V), Operation Down to 2 V When Boost is APPLICATIONS
Enabled Automotive Start-Stop, Infotainment,
Low Power Mode IQ: 30 µA (One Buck On), Navigation Instrument Cluster Systems
35 µA (Two Bucks On) Industrial and Automotive Multi-Rail DC Power
Low Shutdown Current Ish < 4 µA Distribution Systems and Electronic Control
Buck Output Range 0.9 V to 11 V Units
Boost Output Selectable: 7 V, 10 V, or 11 V
Programmable frequency and External
Synchronization Range 150 kHz to 600 kHz
DESCRIPTION
The TPS43330-Q1 and TPS43332-Q1 include two current-mode synchronous buck controllers and a voltage-
mode boost controller. The devices are ideally suited as a pre-regulator stage with low Iq requirements and for
applications that must survive supply drops due to cranking events. The integrated boost controller allows the
devices to operate down to 2 V at the input without seeing a drop on the buck regulator output stages. At light
loads, the buck controllers can be enabled to operate automatically in low-power mode, consuming just 30 µA of
quiescent current.
The buck controllers have independent soft-start capability and power-good indicators. External MOSFET
protection is provided by current foldback in the buck controllers and cycle-by-cycle current limitation in the boost
controller. The switching frequency can be programmed over 150 kHz to 600 kHz or synchronized to an external
clock in the same range. Additionally, the TPS43332-Q1 offers frequency-hopping spread-spectrum operation.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2011–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS43330/2
VBuckA
VBuckB
VBAT
2 V
V BAT
VBU CK B V BUC K A
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Figure 1. Typical Application Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
TJOPTION PACKAGE(2) ORDERABLE PART NUMBER
Frequency-hopping spread spectrum OFF TPS43330QDAPRQ1
–40ºC to 150ºC DAP
Frequency-hopping spread spectrum ON TPS43332QDAPRQ1
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
2Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
space
ABSOLUTE MAXIMUM RATINGS(1)
MIN MAX UNIT
Voltage Input voltage: VIN, VBAT –0.3 60 V
Enable inputs: ENA, ENB –0.3 60 V
Bootstrap inputs: CBA, CBB –0.3 68 V
Phase inputs: PHA, PHB –0.7 60 V
Phase inputs: PHA, PHB (for 150 ns) –1 60 V
Feedback inputs: FBA, FBB –0.3 13 V
Error amplifier outputs: COMPA, COMPB –0.3 13 V
Voltage High-side MOSFET driver: GA1-PHA, GB1-PHB –0.3 8.8 V
(buck function: Low-side MOSFET drivers: GA2, GB2 –0.3 8.8 V
BuckA and BuckB) Current-sense voltage: SA1, SA2, SB1, SB2 –0.3 13 V
Soft start: SSA, SSB –0.3 13 V
Power-good output: PGA, PGB –0.3 13 V
Power-good delay: DLYAB –0.3 13 V
Switching-frequency timing resistor: RT –0.3 13 V
SYNC, EXTSUP –0.3 13 V
Low-side MOSFET driver: GC1 –0.3 8.8 V
Error-amplifier output: COMPC –0.3 13 V
Voltage Enable input: ENC –0.3 13 V
(boost function) Current-limit sense: DS –0.3 60 V
Output-voltage select: DIV –0.3 8.8 V
P-channel MOSFET driver: GC2 –0.3 60 V
Voltage
(PMOS driver) P-channel MOSFET driver: VIN-GC2 –0.3 8.8 V
Gate-driver supply: VREG –0.3 8.8 V
Junction temperature: TJ–40 150 °C
Temperature Operating temperature: TA–40 125 °C
Storage temperature: Tstg –55 165 °C
Human-body model (HBM) AEC-Q11 ±2 kV
Classification Level H2
FBA, FBB, RT, DLYAB ±400
Charged-device model (CDM) AEC-Q11
Electrostatic VBAT, ENC, SYNC, VIN ±750
Classification Level C2
discharge ratings All other pins ±500 V
PGA, PGB ±150
Machine model (MM) All other pins ±200
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to GND.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
THERMAL INFORMATION TPS4333x-Q1
THERMAL METRIC(1) DAP UNIT
38 PINS
θJA Junction-to-ambient thermal resistance(2) 27.3
θJCtop Junction-to-case (top) thermal resistance(3) 19.6
θJB Junction-to-board thermal resistance(4) 15.9 °C/W
ψJT Junction-to-top characterization parameter(5) 0.24
ψJB Junction-to-board characterization parameter(6) 6.6
θJCbot Junction-to-case (bottom) thermal resistance(7) 1.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT
Input voltage: VIN, VBAT 4 40
Enable inputs: ENA, ENB 0 40
Boot inputs: CBA, CBB 4 48
Buck function:
BuckA and BuckB Phase inputs: PHA, PHB –0.6 40 V
voltage Current-sense voltage: SA1, SA2, SB1, SB2 0 11
Power-good output: PGA, PGB 0 11
SYNC, EXTSUP 0 9
Enable input: ENC 0 9
Boost function Voltage sense: DS 40 V
DIV 0 VREG
Operating temperature: TA–40 125 °C
4Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
DC ELECTRICAL CHARACTERISTICS
VIN = 8 V to 18 V, TJ= –40°C to 150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
1.0 Input Supply
Boost controller enabled, after initial start-up
1.1 VBat Supply voltage 2 40 V
condition is satisfied
Input voltage required for device 6.5 40
on initial start-up
1.2 VIN V
Buck regulator operating range 4 40
after initial start-up
VIN falling. After a reset, initial start-up conditions 3.5 3.6 3.8 V
may apply.(1)
1.3 VIN UV Buck undervoltage lockout VIN rising. After a reset, initial start-up conditions 3.8 4 V
may apply.(1)
VBOOST_UNLOC
1.4 Boost unlock threshold VBAT rising 8.2 8.5 8.8 V
KVIN = 13 V, BuckA: LPM, BuckB: off, TA= 25°C 30 40 µA
LPM quiescent current:
1.5 Iq_LPM_ VIN = 13 V, BuckB: LPM, BuckA: off, TA= 25°C
(2)
VIN = 13 V, BuckA, B: LPM, TA= 25°C 35 45 µA
VIN = 13 V, BuckA: LPM, BuckB: off, TA= 125°C 40 50 µA
LPM quiescent current:
1.6 Iq_LPM VIN = 13 V, BuckB: LPM, BuckA: off, TA= 125°C
(2)
VIN = 13 V, BuckA, B: LPM, TA= 125°C 45 55 µA
SYNC = 5 V, TA= 25°C
VIN = 13 V, BuckA: CCM, BuckB: off, TA= 25°C 4.85 5.3
Quiescent current:
1.7 Iq_NRM mA
normal (PWM) mode(2) VIN = 13 V, BuckB: CCM, BuckA: off, TA= 25°C
VIN = 13 V, BuckA, B: CCM, TA= 25°C 7 7.6
SYNC = 5 V, TA= 125°C
VIN = 13 V, BuckA: CCM, BuckB: off, TA= 125°C 5 5.5
Quiescent current:
1.8 Iq_NRM mA
normal (PWM) mode(2) VIN = 13 V, BuckB: CCM, BuckA: off, TA= 125°C
VIN = 13 V, BuckA, B: CCM, TA= 125°C 7.5 8
1.9 Ibat_sh Shutdown current BuckA, B: off, VBat = 13 V , TA= 25°C 2.5 4 µA
1.10 Ibat_sh Shutdown current BuckA, B: off, VBat = 13 V, TA= 125°C 3 5 µA
2.0 Input Voltage VBAT - Undervoltage Lockout
VBAT falling. After a reset, initial start-up 1.8 1.9 2 V
conditions may apply.(1)
2.1 VBATUV Boost-input undervoltage VBAT rising. After a reset, initial start-up 2.4 2.5 2.6 V
conditions may apply.(1)
2.2 UVLOHys Hysteresis 500 600 700 mV
2.3 UVLOfilter Filter time 5 µs
3.0 Input Voltage VIN - Overvoltage Lockout
VIN rising 45 46 47
3.1 VOVLO Overvoltage shutdown V
VIN falling 43 44 45
3.2 OVLOHys Hysteresis 1 2 3 V
3.3 OVLOfilter Filter time 5 µs
(1) If VBAT and VREG remain adequate, the buck can continue to operate if VIN is > 3.8 V.
(2) Quiescent current specification is non-switching current consumption without including the current in the external-feedback resistor
divider.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 V to 18 V, TJ= –40°C to 150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
4.0 Boost Controller
4.1 Vboost7-VIN Boost VOUT = 7 V DIV = low, VBAT = 2 V to 7 V 6.8 7 7.3 V
Boost-enable threshold Boost VOUT = 7 V, VBAT falling 7.5 8 8.5
4.2 Vboost7-th Boost-disable threshold Boost VOUT = 7 V, VBAT falling 8 8.5 9 V
Boost hysteresis Boost VOUT = 7 V, VBAT falling 0.4 0.5 0.6
4.3 Vboost10-VIN Boost VOUT = 10 V DIV = open, VBAT = 2 V to 10 V 9.7 10 10.4 V
Boost-enable threshold Boost VOUT = 10 V, VBAT falling 10.5 11 11.5
4.4 Vboost10-th Boost-disable threshold Boost VOUT = 10 V, VBAT falling 11 11.5 12 V
Boost hysteresis Boost VOUT = 10 V, VBAT falling 0.4 0.5 0.6
4.5 Vboost11-VIN Boost VOUT = 11 V DIV = VREG, VBAT = 2 V to 11 V 10.7 11 11.4 V
Boost-enable threshold Boost VOUT = 11 V, VBAT falling 11.5 12 12.5
4.6 Vboost11-th Boost-disable threshold Boost VOUT = 11 V, VBAT falling 12 12.5 13 V
Boost hysteresis Boost VOUT = 11 V, VBAT falling 0.4 0.5 0.6
Boost-Switch Current Limit
4.7 VDS Current-limit sensing DS input with respect to PGNDA 0.175 0.2 0.225 V
4.8 tDS Leading-edge blanking 200 ns
Gate Driver for Boost Controller
4.9 IGC1 Peak Gate-driver peak current 1.5 A
4.10 rDS(on) Source and sink driver VREG = 5.8 V, IGC1 current = 200 mA 2 Ω
Gate Driver for PMOS
4.11 rDS(on) PMOS OFF 10 20 Ω
4.12 IPMOS_ON Gate current VIN = 13.5 V, Vgs = –5 V 10 mA
4.13 tdelay_ON Turnon delay C = 10 nF 5 10 µs
Boost-Controller Switching Frequency
4.14 fsw-Boost Boost switching frequency fSW_Buck / 2 kHz
4.15 DBoost Boost duty cycle 90%
Error Amplifier (OTA) for Boost Converters
VBAT = 12 V 0.8 1.35
4.16 GmBOOST Forward transconductance mS
VBAT = 5 V 0.35 0.65
5.0 Buck Controllers
5.1 VBuckA/B Adjustable output-voltage range 0.9 11 V
Measure FBX pin 0.792 0.800 0.808 V
Internal reference and tolerance
5.2 Vref, NRM voltage in normal mode –1% 1%
Measure FBX pin 0.784 0.800 0.816 V
Internal reference and tolerance
5.3 Vref, LPM voltage in low-power mode –2% 2%
V sense for forward-current limit in
5.4 FBx = 0.75 V (low duty cycle) 60 75 90 mV
CCM
Vsense V sense for reverse-current limit in
5.5 FBx = 1 V –65 –7.5 23 mV
CCM
5.6 VI-Foldback V sense for output short FBx = 0 V 17 32.5 48 mV
5.7 tdead Shoot-through delay, blanking time 20 ns
High-side minimum on-time 100 ns
5.8 DCNRM Maximum duty cycle (digitally 98.75%
controlled)
5.9 DCLPM Duty cycle, LPM 80%
LPM entry-threshold load current
ILPM_Entry as fraction of maximum set load 1% .(3)
current
5.10 LPM exit-threshold load current as
ILPM_Exit fraction of maximum set load (3) 10%
current
(3) The exit threshold is specified to be always higher than the entry threshold.
6Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 V to 18 V, TJ= –40°C to 150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
High-Side External NMOS Gate Drivers for Buck Controller
5.11 IGX1_peak Gate-driver peak current 1.5 A
5.12 rDS(on) Source and sink driver VVREG = 5.8 V, IGX1 current = 200 mA 2 Ω
Low-Side NMOS Gate Drivers for Buck Controller
5.13 IGX2_peak Gate driver peak current 1.5 A
5.14 RDS ON Source and sink driver VREG = 5.8 V, IGX2 current = 200 mA 2 Ω
Error Amplifier (OTA) for Buck Converters
COMPA, COMPB = 0.8 V,
5.15 GmBUCK Transconductance 0.72 1 1.35 mS
source/sink = 5 µA, test in feedback loop
5.16 IPULLUP_FBx Pullup current at FBx pins FBx = 0 V 50 100 200 nA
6.0 Digital Inputs: ENA, ENB, ENC, SYNC
6.1 VIH Higher threshold VIN = 13 V 1.7 V
6.2 VIL Lower threshold VIN = 13 V 0.7 V
6.3 RIH_SYNC Pulldown resistance on SYNC VSYNC = 5 V 500 kΩ
6.4 RIL_ENC Pulldown resistance on ENC VENC = 5 V 500 kΩ
Pullup current source on ENA,
6.5 IIL_ENx VENx = 0 V, 0.5 2 µA
ENB
7.0 Boost Output Voltage: DIV
7.1 VIH_DIV Higher threshold VREG = 5.8 V Vreg 0.2 V
7.2 VIL_DIV Lower threshold 0.2 V
7.3 Voz_DIV Voltage on DIV if unconnected Voltage on DIV if unconnected Vreg / 2 V
8.0 Switching Parameter Buck DC-DC Controllers
8.1 fSW_Buck Buck switching frequency RT pin: GND 360 400 440 kHz
8.2 fSW_Buck Buck switching frequency RT pin: 60-kΩexternal resistor 360 400 440 kHz
Buck adjustable range with
8.3 fSW_adj RT pin: external resistor 150 600 kHz
external resistor
8.4 fSYNC Buck synchronization range External clock input 150 600 kHz
8.5 fSS Spread-spectrum spreading TPS4333-Q1 only 5%
9.0 Internal Gate-Driver Supply
Internal regulated supply VIN = 8 V to 18 V, EXTSUP = 0 V, SYNC = high 5.5 5.8 6.1 V
9.1 VREG IVREG = 0 mA to 100 mA, EXTSUP = 0 V,
Load regulation 0.2% 1%
SYNC = high
Internal regulated supply EXTSUP = 8.5 V 7.2 7.5 7.8 V
9.2 VREG(EXTSUP) IEXTSUP = 0 mA to 125 mA, SYNC = High
Load regulation 0.2% 1%
EXTSUP = 8.5 V to 13 V
EXTSUP switch-over voltage IVREG = 0 mA to 100 mA,
9.3 VEXTSUP-th 4.4 4.6 4.8 V
threshold EXTSUP ramping positive
9.4 VEXTSUP-Hys EXTSUP switch-over hysteresis 150 250 mV
9.5 IREG-Limit Current limit on VREG EXTSUP = 0 V, normal mode as well as LPM 100 400 mA
IREG_EXTSUP- Current limit on VREG when using IVREG = 0 mA to 100 mA,
9.6 125 400 mA
Limit EXTSUP EXTSUP = 8.5 V, SYNC = High
10.0 Soft Start
10.1 ISSx Soft-start source current SSA and SSB = 0 V 0.75 1 1.25 µA
11.0 Oscillator (RT)
11.1 VRT Oscillator reference voltage 1.2 V
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 V to 18 V, TJ= –40°C to 150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
12.0 Power Good / Delay
12.1 PGpullup Pullup for A and B to Sx2 50 kΩ
12.2 PGth1 Power-good threshold FBx falling –5% 7% –9%
12.3 PGhys Hysteresis 2%
12.4 PGdrop Voltage drop IPGA = 5 mA 450 mV
12.5 IPGA = 1 mA 100 mV
12.6 PGleak Power-good leakage VSx2 = VPGx = 13 V 1 µA
12.7 tdeglitch Power-good deglitch time 2 16 µs
External capacitor = 1 nF
12.8 tdelay Reset delay 1 ms
VBUCKX < PGth1
12.9 tdelay_fix Fixed reset delay No external capacitor, pin open 20 50 µs
Activate current source (current to
12.10 IOH 30 40 50 µA
charge external capacitor)
Activate current sink (current to
12.11 IIL 30 40 50 µA
discharge external capacitor)
13.0 Overtemperature Protection
Junction-temperature shutdown
13.1 Tshutdown 150 165 °C
threshold
13.2 Thys Junction-temperature hysteresis 15 °C
8Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19 20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
DEVICE INFORMATION
DAP PACKAGE
(TOP VIEW)
PIN FUNCTIONS
NAME NO. I/O DESCRIPTION
AGND 23 O Analog ground reference
A capacitor on this pin acts as the voltage supply for the high-side N-channel MOSFET gate-drive circuitry in buck
CBA 5 I controller BuckA. When the buck is in a dropout condition, the device automatically reduces the duty cycle of the
high-side MOSFET to approximately 95% on every fourth cycle to allow the capacitor to recharge.
A capacitor on this pin acts as the voltage supply for the high-side N-channel MOSFET gate-drive circuitry in buck
CBB 34 I controller BuckB. When the buck is in a dropout condition, the device automatically reduces the duty cycle of the
high-side MOSFET to approximately 95% on every fourth cycle to allow the capacitor to recharge.
Error amplifier output of BuckA and compensation node for voltage-loop stability. The voltage at this node sets the
COMPA 13 O target for the peak current through the inductor of BuckA. This voltage is clamped on the upper and lower ends to
provide current-limit protection for the external MOSFETs.
Error amplifier output of BuckB and compensation node for voltage-loop stability. The voltage at this node sets the
COMPB 26 O target for the peak current through the inductor of BuckB. This voltage is clamped on the upper and lower ends to
provide current-limit protection for the external MOSFETs.
COMPC 18 O Error-amplifier output and loop-compensation node of the boost regulator
The status of this pin defines the output voltage of the boost regulator. A high input regulates the boost converter
DIV 36 I at 11 V, a low input sets the value at 7 V, and a floating pin sets 10 V.
The capacitor at the DLYAB pin sets the power-good delay interval used to de-glitch the outputs of the power-
DLYAB 21 O good comparators. When this pin is left open, the power-good delay is set to an internal default value of 20 µs
typical.
This input monitors the voltage on the external boost-converter low-side MOSFET for overcurrent protection.
DS 2 I Alternatively, it can be connected to a sense resistor between the source of the low-side MOSFET and ground via
a filter network for better noise immunity.
Enable input for BuckA (active-high with an internal pullup current source). An input voltage higher than 1.5 V
ENA 16 I enables the controller, whereas an input voltage lower than 0.7 V disables the controller. When both ENA and
ENB are low, the device is shut down and consumes less than 4 µA of current.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
PIN FUNCTIONS (continued)
NAME NO. I/O DESCRIPTION
Enable input for BuckB (active-high with an internal pullup current source). An input voltage higher than 1.5 V
ENB 17 I enables the controller, whereas an input voltage lower than 0.7 V disables the controller. When both ENA and
ENB are low, the device is shut down and consumes less than 4 µA of current.
This input enables and disables the boost regulator. An input voltage higher than 1.5 V enables the controller.
Voltages lower than 0.7 V disable the controller. Because this pin provides and internal pulldown resistor (500 kΩ)
ENC 19 I it must be pulled high to enable the boost function. When enabled, the controller starts switching as soon as VBAT
falls below the boost threshold, depending upon the programmed output voltage.
EXTSUP can be used to supply the VREG regulator from one of the TPS43330/2 buck regulator rails to reduce
EXTSUP 37 I power dissipation in cases where VIN is expected to be high. When EXTSUP is open or lower than 4.6 V, the
regulator is powered from VIN.
Feedback voltage pin for BuckA. The buck controller regulates the feedback voltage to the internal reference of
FBA 12 I 0.8 V. A suitable resistor divider network between the buck output and the feedback pin sets the desired output
voltage.
Feedback voltage pin for BuckB. The buck controller regulates the feedback voltage to the internal reference of
FBB 27 I 0.8 V. A suitable resistor-divider network between the buck output and the feedback pin sets the desired output
voltage.
External high-side N-channel MOSFET for buck regulator BuckA can be driven from this output. The output
GA1 6 O provides high peak currents to drive capacitive loads. The gate drive is referred to a floating ground reference
provided by PHA and has a voltage swing provided by CBA.
External low-side N-channel MOSFET for buck regulator BuckA can be driven from this output. The output
GA2 8 O provides high peak currents to drive capacitive loads. The voltage swing on this pin is provided by VREG.
External high-side N-channel MOSFET for buck regulator BuckB can be driven from this output. The output
GB1 33 O provides high peak currents to drive capacitive loads. The gate drive is referred to a floating ground reference
provided by PHB and has a voltage swing provided by CBB.
External low-side N-channel MOSFETs for buck regulator BuckB can be driven from this output. The output
GB2 31 O provides high peak currents to drive capacitive loads. The voltage swing on this pin is provided by VREG.
An external low-side N-channel MOSFET for the boost regulator can be driven from this output. This output
GC1 3 O provides high peak currents to drive capacitive loads. The voltage swing on this pin is provided by VREG.
A floating output drive to control the external P-channel MOSFET is available at this pin. This MOSFET can be
GC2 4 O used to bypass the boost rectifier diode or a reverse protection diode when the boost is not switching or if boost is
disabled, and thus reduce power losses.
Open-drain power-good indicator pin for BuckA. An internal power-good comparator monitors the voltage at the
PGA 15 O feedback pin and pulls this output low when the output voltage falls below 93% of the set value, or if either Vin or
Vbat drops below its respective undervoltage threshold.
Open-drain power-good indicator pin for BuckB. An internal power-good comparator monitors the voltage at the
PGB 24 O feedback pin and pulls this output low when the output voltage falls below 93% of the set value, or if either Vin or
Vbat drops below its respective undervoltage threshold.
PGNDA 9 O Power ground connection to the source of the low-side N-channel MOSFETs of BuckA.
PGNDB 30 O Power ground connection to the source of the low-side N-channel MOSFETs of BuckB
Switching terminal of buck regulator BuckA, providing a floating ground reference for the high-side MOSFET gate-
PHA 7 O driver circuitry and used to sense current reversal in the inductor when discontinuous-mode operation is desired.
Switching terminal of buck regulator BuckB, providing a floating ground reference for the high-side MOSFET gate-
PHB 32 O driver circuitry and used to sense current reversal in the inductor when discontinuous-mode operation is desired.
The operating switching frequency of the buck and boost controllers is set by connecting a resistor to ground on
RT 22 O this pin. A short circuit to ground on this pin defaults operation to 400 kHz for the buck controllers and 200 kHz for
the boost controller.
SA1 10 I High-impedance differential voltage inputs from the current-sense element (sense resistor or inductor DCR) for
each buck controller. The current-sense element should be chosen to set the maximum current through the
inductor based on the current-limit threshold (subject to tolerances) and considering the typical characteristics
SA2 11 I across duty cycle and VIN. (SA1 positive node, SA2 negative node).
SB1 29 I High-impedance differential voltage inputs from the current-sense element (sense resistor or inductor DCR) for
each buck controller. The current-sense element should be chosen to set the maximum current through the
inductor based on the current-limit threshold (subject to tolerances) and considering the typical characteristics
SB2 28 I across duty cycle and VIN. (SB1 positive node, SB2 negative node).
Soft-start or tracking input for buck controller BuckA. The buck controller regulates the FBA voltage to the lower of
0.8 V or the SSA pin voltage. An internal pullup current source of 1 µA is present at the pin, and an appropriate
SSA 14 O capacitor connected here can be used to set the soft-start ramp interval. A resistor divider connected to another
supply can also be used to provide a tracking input to this pin.
10 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
PIN FUNCTIONS (continued)
NAME NO. I/O DESCRIPTION
Soft-start or tracking input for buck controller BuckB. The buck controller regulates the FBB voltage to the lower of
0.8 V or the SSB pin voltage. An internal pullup current source of 1 µA is present at the pin, and an appropriate
SSB 25 O capacitor connected here can be used to set the soft-start ramp interval. A resistor-divider connected to another
supply can also be used to provide a tracking input to this pin.
If an external clock is present on this pin, the device detects it and the internal PLL locks onto the external clock.
This overrides the internal oscillator frequency. The device can synchronize to frequencies from 150 kHz to 600
kHz. A high logic level on this pin ensures forced continuous-mode operation of the buck controllers and inhibits
SYNC 20 I transition to low-power mode. An open or low allows discontinuous mode operation and entry into low-power
mode at light loads. On the TPS43332, a high level enables frequency-hopping spread spectrum, whereas an
open or a low level disables it.
Battery input sense for the boost controller. If the boost controller is enabled and the voltage at VBAT falls below
VBAT 1 I the boost threshold, the device activates the boost controller and regulates the voltage at VIN to the programmed
boost output voltage.
Main Input pin. This is the buck controller input pin as well as the output of the boost regulator. Additionally, it
VIN 38 I powers the internal control circuits of the device.
An external capacitor on this pin is required to provide a regulated supply for the gate drivers of the buck and
boost controllers. A capacitance in the order of 4.7 µF is recommended. The regulator can be used such that it is
VREG 35 O either powered from VIN or EXTSUP. This pin has current-limit protection and should not be used to drive any
other loads.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
VIN
SYNC
GA1
FBA
GA2
CBA
SA1
SA2
PGNDA
COMPA
ENA
PGA
GC2
VREG
DLYAB
RT
PHA
SSA
EXTSUP
Filter timer
+
0.8V
+
+
-
-
-
+
PWM
comp +
Slope Comp
gm
OTA
Current sense
Amp
PWM logic
40 Am
40 Am
Internal ref
(Band gap)
VREF
SA2
VREF
VREF
Gate Driver
Supply
Internal
Oscillator
SYNC &
LPM
180 deg
ENA
1 Am
EN
Source/
Sink
Logic
ENB
VIN
VIN
500 nA
500 nA
1 Am
SSB
ENB
Duplicate for second
Buck controller channel
GB1
FBB
GB2
CBB
SB1
SB2
PGNDB
COMPB
PGB
PHB
VREG
SSA
PWM
Logic
+
-
Vref
VBAT
VIN
+
-
0.2V
gm
OTA
OCP
DIV
DS
COMPC
GC1
ENC
PWM
comp
-+
AGND
Second Buck Controller
Channel
38
37
35
22
20
4
14
16
25
17
18
1
36
2
3
19
23
24
26
27
28
29
30
31
32
33
34
21
15
13
12
11
10
8
7
6
5
9
+
VREG
PGNDA
FBA
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Figure 2. Functional Block Diagram
12 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
SOFT-START OUTPUTS (BUCK)
2ms/DIV
VOUTA
VOUTB
1V/DIV
OUTPUT CURRENT (A)
EFFICIENCY (%)
EFFICIENCY ACROSS OUTPUT CURRENTS (BUCKS)
POWER LOSS (mW)
EFFICIENCY,
SYNC = LOW
POWER LOSS,
SYNC = HIGH
POWER LOSS,
SYNC = LOW
EFFICIENCY,
SYNC = HIGH
VIN = 12V, VOUT = 5V, SWITCHING FREQUENCY = 400kHz
INDUCTOR = 4.7µH, RSENSE = 10mW
0.0001 0.001 0.01 0.1 110
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
10000
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
CRANKING PULSE BOOST RESPONSE
(12V to 4V IN 1ms AT BOOST DIRECT OUTPUT 25W)
0A
0V
20ms/DIV
VBAT (BOOST INPUT)
5V/DIV
VIN (BOOST OUTPUT)
5V/DIV
IIND
10A/DIV
VIN (BOOST OUTPUT) = 10V, BUCKA = 5V/1.5A, BUCKB = 3.3V/3.5A,
SWITCHING FREQUENCY = 200kHz, INDUCTOR = 1.0µH,
RSENSE = 7.5mOHM, CIN = 440µF, COUT = 660µF
0V
CRANKING PULSE BOOST RESPONSE
(12V to 3V IN 1ms AT BUCK OUTPUTS 7.5W/11.5W)
0A
0V
20ms/DIV
VBAT (BOOST INPUT)
5V/DIV
VOUT BUCKA AC-COUPLED
200mV/DIV
VOUT BUCKB AC-COUPLED
200mV/DIV
IIND
10A/DIV
VIN (BOOST OUTPUT) = 10V, BUCKA = 5V/1.5A, BUCKB = 3.3V/3.5A,
SWITCHING FREQUENCY = 200kHz, INDUCTOR = 1.0µH,
RSENSE = 7.5mOHM, CIN = 440µF, COUT = 660µF
OUTPUT CURRENT (A)
EFFICIENCY (%)
EFFICIENCY ACROSS OUTPUT CURRENTS (BOOST)
VIN (BOOST OUTPUT) = 10V, SWITCHING FREQUENCY = 200kHz,
INDUCTOR = 1.0µH, RSENSE = 7.5mW
0.01 110
0
10
20
30
40
50
60
70
80
90
100
VBAT = 8V
VBAT = 5V
VBAT = 3V
BUCK LOAD STEP: LOW POWER MODE EXIT
(90 mA TO 4 A AT 2.5 A/µs)
VIN = 12 V, VOUT = 5 V, SWITCHING FREQUENCY = 400 kHz
INDUCTOR = 4.7 µH, RSENSE = 10 mW
50 µs/DIV
VOUT AC-COUPLED
100 mV/DIV
IIND
2 A/DIV
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 7. Figure 8.
Figure 9. Figure 10.
Figure 11. Figure 12.
14 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
INDUCTOR CURRENTS (BOOST)
VBAT (BOOST INPUT) = 5V, VIN (BOOST OUTPUT) = 10V,
SWITCHING FREQUENCY = 200kHz, INDUCTOR = 1.0µH,
RSENSE = 7.5m , CIN = 440µF, COUT = 660µFW
2µs/DIV
3A LOAD
5A/DIV
100mA LOAD
5A/DIV
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
TYPICAL CHARACTERISTICS (continued)
Figure 13.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
CURRENT LIMIT VS DUTY CYCLE (BUCK)
DUTY CYCLE (%)
PEAK CURRENT SENSE VOLTAGE (mV)
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60 70 80 90 100
VIN = 8V
VIN = 12V
CURRENT SENSE PINS INPUT CURRENT (BUCK)
OUTPUT VOLTAGE (V)
SENSE CURRENT (µA)
01 2 345678 9 10 11 12
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
150°C
25°C
FOLDBACK CURRENT LIMIT (BUCK)
FBx VOLTAGE (V)
PEAK CURRENT SENSE VOLTAGE (mV)
0 0.2 0.4 0.6 0.8
0
10
20
30
40
50
60
70
80
BOTH BUCKS ON
ONE BUCK ON
NEITHER BUCK ON
Quiescent Current (µA)
Temperature (°C)
0
10
20
30
40
50
60
-40 -15 10 35 60 85 110 135 160
NO-LOAD QUIESCENT CURRENT
ACROSS TEMPERATURE
BUCKx PEAK CURRENT LIMIT vs. COMPx VOLTAGE
COMPx VOLTAGE (V)
PEAK CURRENT SENSE VOLTAGE (mV)
SYNC = LOW
SYNC = HIGH
0.65 0.8 0.95 1.1 1.25 1.4 1.55
-37.5
-25
-12.5
0
12.5
25
37.5
50
62.5
75
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 14. Figure 15.
Figure 16. Figure 17.
Figure 18. Figure 19.
16 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
SS
SS
I ×Δt
C = (Farads)
ΔV
SW
9
SW
X
f = (X=24kΩ×MHz)
RT
10
f =24× RT
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
DETAILED DESCRIPTION
BUCK CONTROLLERS: NORMAL MODE PWM OPERATION
Frequency Selection and External Synchronization
The buck controllers operate using constant-frequency peak-current-mode control for optimal transient behavior
and ease of component choices. The switching frequency is programmable between 150 kHz and 600 kHz,
depending upon the resistor value at the RT pin. A short circuit to ground at this pin sets the default switching
frequency to 400 kHz. The frequency can also be set by a resistor at RT, according to the formula:
For example,
600 kHz requires 40 kΩ
150 kHz requires 160 kΩ
It is also possible to synchronize to an external clock at the SYNC pin in the same frequency range of 150 kHz to
600 kHz. The device detects clock pulses at this pin, and an internal PLL locks on to the external clock within the
specified range. The device can also detect a loss of clock at this pin, and when this condition is detected, the
device sets the switching frequency to the internal oscillator. The two buck controllers operate at identical
switching frequencies, 180 degrees out-of-phase.
Enable Inputs
The buck controllers are enabled using independent enable inputs from the ENA and ENB pins. These are high-
voltage pins, with a threshold of 1.5 V for high level, and can be connected directly to the battery for self-bias.
The low threshold is 0.7 V. Both these pins have internal pullup currents of 0.5 µA (typical). As a result, an open
circuit on these pins enables the respective buck controllers. When both buck controllers are disabled, the device
is shut down and consumes a current less than 4 µA.
Feedback Inputs
The output voltage is set by choosing the right resistor feedback divider network connected to the FBx (feedback)
pins. Choose this network such that the regulated voltage at the FBx pin equals 0.8 V. The FBx pins have a 100-
nA pullup current source as a protection feature in case the pins open up as a result of physical damage.
Soft-Start Inputs
In order to avoid large inrush currents, both buck controllers have an independent programmable soft-start timer.
The voltage at the SSx pins acts as the soft-start reference voltage. A 1-µA pullup current is available at the SSx
pins, and by choosing a suitable capacitor, a ramp of the desired soft-start speed can be generated. After start-
up, the pullup current ensures that SSx is higher than the internal reference of 0.8 V; 0.8 V then becomes the
reference for the buck controllers. The soft-start ramp time is defined by:
where,
ISS = 1 µA (typical)
V = 0.8 V
CSS is the required capacitor for t, the desired soft-start time.
Alternatively, the soft-start pins can be used as tracking inputs. In this case, they should be connected to the
supply to be tracked via a suitable resistor-divider network.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
DCR
Inductor L
R1
C1
VBUCK X
Sx2
Sx1
VC
TPS43330/2
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Current-Mode Operation
Peak-current-mode control regulates the peak current through the inductor such that the output voltage is
maintained to its set value. The error between the feedback voltage at FBx and the internal reference produces a
signal at the output of the error amplifier (COMPx) which serves as the target for the peak inductor current. The
current through the inductor is sensed as a differential voltage at Sx1–Sx2 and compared with this target during
each cycle. A fall or rise in load current produces a rise or fall in voltage at FBx, causing COMPx to fall or rise
respectively, thus increasing or decreasing the current through the inductor until the average current matches the
load. In this way, the output voltage is maintained in regulation.
The top N-channel MOSFET is turned on at the beginning of each clock cycle and kept on until the inductor
current reaches its peak value. Once this MOSFET is turned off, and after a small delay (shoot-through delay)
the lower N-channel MOSFET is turned on until the start of the next clock cycle. In dropout operation, the high-
side MOSFET stays on continuously. In every fourth clock cycle, the duty cycle is limited to 95% in order to
charge the bootstrap capacitor at CBx. This allows a maximum duty cycle of 98.75% for the buck regulators.
During dropout, the buck regulator switches at one-fourth of its normal frequency.
Current Sensing and Current Limit with Foldback
The maximum value of COMPx is clamped such that the maximum current through the inductor is limited to a
specified value. When the output of the buck regulator (and hence the feedback value at FBx) falls to a low value
due to a short circuit or overcurrent condition, the clamped voltage at the COMPx successively decreases, thus
providing current foldback protection. This protects the high-side external MOSFET from excess current (forward-
direction current limit).
Similarly, if due to a fault condition the output is shorted to a high voltage and the low-side MOSFET turns fully
on, the COMPx node drops low. It is clamped on the lower end as well, in order to limit the maximum current in
the low-side MOSFET (reverse-direction current limit).
The current through the inductor is sensed by an external resistor. The sense resistor should be chosen such
that the maximum forward peak current in the inductor generates a voltage of 75 mV across the sense pins. This
value is specified at low duty cycles only. At typical duty-cycle conditions around 40% (assuming 5 V output and
12 V input), 50 mV is a more reasonable value, considering tolerances and mismatches. The typical
characteristics provide a guide for using the correct current-limit sense voltage.
The current-sense pins Sx1 and Sx2 are high-impedance pins with low leakage across the entire output range.
This allows DCR current sensing using the dc resistance of the inductor for higher efficiency. DCR sensing is
shown in Figure 20. Here, the series resistance (DCR) of the inductor is used as the sense element. The filter
components should be placed close to the device for noise immunity. Remember that while the DCR sensing
gives high efficiency, it is inaccurate due to the temperature sensitivity and a wide variation of the parasitic
inductor series resistance. Hence, it may often be advantageous to use the more-accurate sense resistor for
current sensing.
Figure 20. DCR Sensing Configuration
18 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
DELAY
DLYAB
t 1 msec
=
C 1 nF
SW
S
L×f =200
R
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Slope Compensation
Optimal slope compensation which is adaptive to changes in input voltage and duty cycle allows stable operation
at all conditions. For optimal performance of this circuit, the following condition must be satisfied in the choice of
inductor and sense resistor:
where
L is the buck regulator inductor in henries.
RSis the sense resistor in ohms.
fsw is the buck regulator switching frequency in hertz.
Power-Good Outputs and Filter Delays
Each buck controller has an independent power-good comparator monitoring the feedback voltage at the FBx
pins and indicating whether the output voltage has fallen below a specified power-good threshold. This threshold
has a typical value of 93% of the regulated output voltage. The power-good indicator is available as an open-
drain output at the PGx pins. An internal 50-kΩpullup resistor to Sx2 is available, or an external resistor can be
used. When a buck controller is shut down, the power-good indicator is pulled down internally. Connecting the
pullup resistor to a rail other than the output of that particular buck channel causes a constant current flow
through the resistor when the buck controller is powered down.
In order to avoid triggering the power-good indicators due to noise or fast transients on the output voltage, an
internal delay circuit for de-glitching is used. Similarly, when the output voltage returns to its set value after a long
negative transient, the power-good indicator is asserted high (the open-drain pin released) after the same delay.
This can be used to delay the reset to the circuits being powered from the buck regulator rail. The delay of this
circuit can be programmed by using a suitable capacitor at the DLYAB pin according to the equation:
When the DLYAB pin is open, the delay is set to a default value of 20 µs typical. The power-good delay timing is
common to both the buck rails, but the power-good comparators and indicators function independently.
Light-Load PFM Mode
An external clock or a high level on the SYNC pin results in forced continuous-mode operation of the bucks.
When the SYNC pin is low or open, the buck controllers are allowed to operate in discontinuous mode at light
loads by turning off the low-side MOSFET whenever a zero-crossing in the inductor current is detected.
In discontinuous mode, as the load decreases, the duration of the clock period when both the high-side and low-
side MOSFETs are turned off increases (deep discontinuous mode). In case the duration exceeds 60% of the
clock period and VBAT > 8 V, the buck controller switches to a low-power operation mode. The design ensures
that this typically occurs at 1% of the set full-load current if the inductor and the sense resistor have been chosen
appropriately as recommended in the slope compensation section.
In low-power PFM mode, the buck monitors the FBx voltage and compares it with the 0.8-V internal reference.
Whenever the FBx value falls below the reference, the high-side MOSFET is turned on for a pulse duration
inversely proportional to the difference VIN Sx2. At the end of this on-time, the high-side MOSFET is turned off
and the current in the inductor decays until it becomes zero. The low-side MOSFET is not turned on. The next
pulse occurs the next time FBx falls below the reference value. This results in a constant volt-second ton
hysteretic operation with a total device quiescent current consumption of 30 µA when a single buck channel is
active and 35 µA when both channels are active.
As the load increases, the pulses become more and more frequent and move closer to each other until the
current in the inductor becomes continuous. At this point, the buck controller returns to normal fixed-frequency
current-mode control. Another criterion to exit the low-power mode is when VIN falls low enough to require higher
than 80% duty cycle of the high-side MOSFET.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
DS
GC1
TPS43330 /2
VIN
Vbat
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
The TPS43330-Q1and TPS43332-Q1 an support the full-current load during low-power mode until the transition
to normal mode takes place. The design ensures the low-power mode exit occurs at 10% (typical) of full-load
current if the inductor and sense resistor have been chosen as recommended. Moreover, there is always a
hysteresis between the entry and exit thresholds to avoid oscillating between the two modes.
In the event that both buck controllers are active, low-power mode is only possible when both buck controllers
have light loads that are low enough for low-power mode entry. When the boost controller is enabled, low-power
mode is possible only if VBAT is high enough to prevent the boost from switching and if DIV is open or set to
GND. If DIV is high (VREG), low-power mode is inhibited.
Boost Controller
The boost controller has a fixed-frequency voltage-mode architecture and includes cycle-by-cycle current-limit
protection for the external N-channel MOSFET. The switching frequency is derived from and set to one-half of
the buck-controller switching frequency. The output voltage of the boost controller at the VIN pin is set by an
internal resistor-divider network and is programmable to 7 V, 10 V or 11 V, based on the low, open, or high
status, respectively, of the DIV pin. A change of the DIV setting is not recognized while the device is in low-
power mode.
The boost controller is enabled by the active-high ENC pin and is active when the input voltage at the VBAT pin
has crossed the unlock threshold of 8.5 V at least once. After that, the boost controller is armed and starts
switching as soon as VIN falls below the value set by the DIV pin and regulates the VIN voltage. Thus, the boost
regulator maintains a stable input voltage for the buck regulators during transient events such as a cranking
pulse at VBAT.
Whenever the voltage at the DS pin exceeds 200 mV, the boost external MOSFET is turned off by pulling the
CG1 pin low. By connecting the DS pin to the drain of the MOSFET or to a sense resistor between the MOSFET
source and ground, cycle-by-cycle overcurrent protection for the MOSFET can be achieved. The on-resistance of
the MOSFET or the value of the sense resistor must be chosen in such a way that the on-state voltage at the DS
does not exceed 200 mV at the maximum-load and minimum-input-voltage conditions. When a sense resistor is
used , a filter network is recommended to be connected between the DS pin and the sense resistor for better
noise immunity.
The boost output (VIN) can also be used to supply other circuits in the system. However, they should be high-
voltage tolerant. The boost output is regulated to the programmed value only when VIN is low, and so VIN can
reach battery levels.
Figure 21. External Drain-Source Voltage Sensing
20 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
DS
GC1
TPS43330 /2
VIN
Vbat
RISEN
RIFLT
CIFLT
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Figure 22. External Current Shunt Resistor
Frequency-Hopping Spread Spectrum (TPS43332 Only)
The TPS43332 features a frequency-hopping pseudo-random spectrum-spreading architecture. On this device,
whenever the SYNC pin is high, the internal oscillator frequency is varied from one cycle to the next within a
band of ±5% around the value programmed by the resistor at the RT pin. The implementation uses a linear-
feedback shift register that changes the frequency of the internal oscillator based on a digital code. The shift
register is long enough to make the hops pseudo-random in nature and is designed in such a way that the
frequency shifts only by one step at each cycle to avoid large jumps in the buck and boost switching frequencies.
Table 1. Frequency-Hopping Control
Sync Frequency Spread Spectrum (FSS) Comments
Terminal
Device in forced continuous mode, internal PLL locks into external clock
External clock Not active between 150 kHz and 600 kHz.
Device can enter discontinuous mode. Automatic LPM entry and exit,
Low or open Not active depending on load conditions
TPS43330: FSS not active
High Device in forced continuous mode
TPS43332: FSS active
Table 2. Mode of Operation
ENABLE AND INHIBIT PINS DRIVER STATUS DEVICE STATUS QUIESCENT CURRENT
ENA ENB ENC SYNC BUCK CONTROLLERS BOOST CONTROLLER
Low Low Low X Shutdown Disabled Shutdown Approximately 4 µA
Low Buck B: LPM enabled Approximately 30 µA (light loads)
Low High Low Buck B running Disabled
High Buck B: LPM inhibited mA range
Low Buck A: LPM enabled Approximately 30 µA (light loads)
High Low Low Buck A running Disabled
High Buck A: LPM inhibited mA range
Low Buck A/B: LPM enabled Approximately 35 µA (light loads)
BuckA and BuckB
High High Low Disabled
running
High Buck A/B: LPM inhibited mA range
Low Low Low X Shutdown Disabled Shutdown Approximately 4 µA
Approximately 50 µA (no boost,
Low Buck B: LPM enabled
Boost running for VIN < set light loads)
Low High High Buck B running boost output
High Buck B: LPM inhibited mA range
Approximately 50 µA (no boost,
Low Buck A: LPM enabled
Boost running for VIN < set light loads)
High Low High Buck A running boost output
High Buck A: LPM inhibited mA range
Approximately 60 µA (no boost,
Low Buck A/B: LPM enabled
BuckA and BuckB Boost running for VIN < set light loads)
High High High running boost output
High Buck A/B: LPM inhibited mA range
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 21
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
LDO
EXTSUP
LDO
VIN
VIN EXTSUP
VREG
typ 5.8 V typ 7.5 V
typ 4.6 V
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Gate-Driver Supply (VREG, EXTSUP)
The gate drivers of the buck and boost controllers are supplied from an internal linear regulator whose output
(5.8 V typical) is available at the VREG pin and should be decoupled using at least a 3.3-µF ceramic capacitor.
This pin has internal current-limit protection and should not be used to power any other circuits.
The VREG linear regulator is powered from VIN by default when the EXTSUP voltage is lower than 4.6 V
(typical). In case VIN expected to go to high levels, there can be excessive power dissipation in this regulator,
especially at high switching frequencies and when using large external MOSFETs. In this case, it is
advantageous to power this regulator from the EXTSUP pin, which can be connected to a supply lower than VIN
but high enough to provide the gate drive. When EXTSUP is connected to a voltage greater than 4.6 V, the linear
regulator automatically switches to EXTSUP as its input to provide this advantage. Efficiency improvements are
possible when one of the switching regulator rails from the TPS43330-Q1 or TPS43332-Q1 or any other voltage
available in the system is used to power EXTSUP. The maximum voltage that should be applied to EXTSUP is
13 V.
Figure 23. Internal Gate-Driver Supply
Using a large value for EXTSUP is advantageous, as it provides a large gate drive and hence better on-
resistance of the external MOSFETs. A 0.1-µF ceramic capacitor is recommended for decoupling the EXTSUP
pin when not being used.
During low-power mode, the EXTSUP functionality is not available. The internal regulator operates as a shunt
regulator powered from VIN and has a typical value of 7.5 V. Current-limit protection for VREG is available in
low-power mode as well.
External P-Channel Drive (GC2) and Reverse Battery Protection
The TPS43330-Q1 and TPS43332-Q1 include a gate driver for an external P-channel MOSFET which can be
connected across the rectifier diode of the boost regulator. This is useful to reduce power losses when the boost
controller is not switching. The gate driver provides a swing of 6 V typical below the VIN voltage in order to drive
a P-channel MOSFET. When VBAT falls below the boost-enable threshold, the gate driver turns off the P-
channel MOSFET and the diode is no longer bypassed.
The gate driver can also be used to bypass any additional protection diodes connected in series, as shown in
Figure 24.Figure 25 also shows a different scheme of reverse battery protection, which may require only a
smaller-sized diode to protect the N-channel MOSFET, as it conducts only for a part of the switching cycle.
Because it is not always in the series path, the system efficiency can be improved.
22 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330/2
GC2
VBAT
Fuse
VIN
DS
GC1
COMPC
VBAT
C14
Fuse (S1)
Q6
C13
C15C17
C16
D2
R10
Q7
D3
D1
TPS43330/2
GC2
VIN
DS
GC1
COMPC
VBAT
R9
Vbat
L3
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Figure 24. Reverse Battery Protection Option 1 for Buck Boost Configuration
Figure 25. Reverse Battery Protection Option 2 for Buck Boost Configuration
Undervoltage Lockout and Overvoltage Protection
The TPS43330-Q1 and TPS43332-Q1 start up at a VIN voltage of 6.5 V (minimum), required for the internal
supply (VREG). Once it has started up, the device operates down to a VIN voltage of 3.6 V; below this voltage
level, the undervoltage lockout disables the device. Note: if Vin drops, VREG drops as well; hence, the gate-drive
voltage is reduced, whereas the digital logic is fully functional. Note as well, even if ENC is high, the boost
requires the unlock-voltage of typically 8.5 V to be exceeded once, before it can be activated (see the Boost
Controller section herein). A voltage of 46 V at VIN triggers the overvoltage comparator, which shuts down the
device. In order to prevent transient spikes from shutting down the device, the under- and overvoltage protection
have filter times of 5 µs (typical).
When the voltages return to the normal operating region, the enabled switching regulators start including a new
soft-start ramp for the buck regulators.
When the boost controller is enabled, a voltage less than 1.9 V (typical) on VBAT triggers an undervoltage
lockout and pulls the boost gate driver (GC1) low (this action has a filter delay of 5 µs, typical). As a result, VIN
falls at a rate dependent on its capacitor and load, eventually triggering VIN undervoltage. A short falling
transient at VBAT even lower than 2 V can thus be survived, if VBAT returns above 2.5 V before VIN is
discharged to the undervoltage threshold.
Thermal Protection
The TPS43330-Q1 or TPS43332-Q1 protects itself from overheating using an internal thermal shutdown circuit. If
the die temperature exceeds the thermal shutdown threshold of 165ºC due to excessive power dissipation (for
example, due to fault conditions such as a short circuit at the gate drivers or VREG), the controllers are turned
off and restarted when the temperature has fallen by 15ºC.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 23
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
COMPx
+
-
VIN
VREF
7V
10 V
12 V
C 1
C 2
R3
CO
RESR
OTA-gmEA
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
APPLICATION INFORMATION
The following example illustrates the design process and component selection for the TPS43330. The design
goal parameters are given in Table 3.
Table 3. Application Example
PARAMETER VBUCK A VBUCK B BOOST
VIN 6 V to 30 V VIN 6 V to 30 V VBAT - 5 V (cranking
Input voltage 12 V - typical 12 V - typical pulse input) to 30 V
Output voltage, VO5 V 3.3 V 10 V
Maximum output current, IO3 A 2 A 2.5 A
Load step output tolerance, VO±0.2 V ±0.12 V ±0.5 V
Current output load step, IO0.1 A to 3 A 0.1 A to 2 A 0.1 A to 2.5 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz
This is a starting point and theoretical representation of the values to be used for the application, further
optimization of the components derived may be required to improve the performance of the device.
Boost Component Selection
A boost converter operating in continuous-conduction mode (CCM) has a right-half-plane (RHP) zero in its
transfer function. The RHP zero is inversely related to the load current and inductor value and directly related to
the input voltage. The RHP zero limits the maximum bandwidth achievable for the boost regulator. If the
bandwidth is too close to the RHP zero frequency, the regulator may become unstable.
Thus, for high-power systems with low input voltages, a low inductor value is chosen. This increases the
amplitude of the ripple currents in the N-channel MOSFET, the inductor, and the capacitors for the boost
regulator. They must be designed with the ripple-to-RHP zero trade-off in mind and considering the power
dissipation effects in the components due to parasitic series resistance.
A boost converter that operates in the discontinuous mode does not contain the RHP zero in its transfer function.
However, this needs an even lower inductor value and has high ripple currents. Also, ensure that the regulator
never enters the continuous-conduction mode; otherwise, it may become unstable.
Figure 26. Boost Compensation Components
This design is done assuming continuous-conduction mode. During light load conditions, the boost converter
operates in discontinuous mode without affecting stability. Hence, the assumptions here cover the worst case for
stability.
24 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
SENSE
0.2 V
R 25 m
7.85 A
= = W
RIPPLE
PEAK INmax
I3.1 A
I I 6.3 A + 7.85 A
2 2
= + = =
max max
54.9 H
2 2.52 2 200
BAT ON BAT
IN IN SW
V T V V
L
I I f A kHz m
*
= = =
* * * *
=
BAT
INmax (at V = 5 V) 31.3 W
I 6.3 A
5 V
==
OUT
INmax
P25 W
P 31.3 W
Efficiency 0.8
= = =
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Boost Maximum Input Current IIN_MAX
The maximum input current is drawn at the minimum input voltage and maximum load. The efficiency for VBAT =
5 V at 2.5 A is 80%, based on the typical characteristics plot.
Hence,
Boost Inductor Selection, L
Allow input ripple current of 40% of IIN max at VBAT = 5 V.
Choose a lower value of 4 µH in order to ensure a high RHP-zero frequency while making a compromise that
expects a high current ripple. Also, this can make the boost converter operate in discontinuous conduction mode,
where it is easier to compensate.
The inductor saturation current must be higher than the peak inductor current and some percentage higher than
the maximum current-limit value set by the external sensing resistive element.
This rating should be determined at the minimum input voltage, maximum output current, and maximum core
temperature for the application.
Inductor Ripple Current, IRIPPLE
Based on an inductor value of 4 µH, the ripple current is approximately 3.1 A.
Peak Current in Low-Side FET, IPEAK
Based on this peak current value, the external current-sense resistor RSENSE is calculated.
Select 20 m, allowing for tolerance.
The filter component values RIFLT and CIFLT for current sense are 1.5 kΩand 1 nF, respectively. This allows for
good noise immunity.
Right Half-Plane Zero RHP Frequency, fRHP
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 25
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
ESR ESR
O ESR
ESR
LC
O
1
f Hz, assume R = 40 m
2 C R
1
f 6 kHz
2 660 F 0.04
1 1
f 3.1 kHz
2 L C 2 4 H 660 F
=
= =
= W
p ´ ´
=
p ´ m ´ W
=
p ´ ´ p ´ m ´ m
RHP
LC
BAT min
INmax
O
22
INmax
O
BAT min
O min
4 H
f
f
10
V
10
2 I L
2 L C
10 I 10 6.3 A
C L
V 5 V
C 635 F
³ ´ m
£
£p´ ´
p´ ´
æ ö
´æ ö
´
ç ÷ ´ = ç ÷
ç ÷ è ø
è ø
³ m
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Output Capacitor, CO
To ensure stability, output capacitor COis chosen such that
Select CO= 680 µF.
This capacitor is usually aluminum electrolytic with ESR in the tens of milliohms. This is good for loop stability,
because it provides a phase boost due to the ESR. The output filter components, L and C, create a double pole
(180-degree phase shift) at a frequency fLC and the ESR of the output capacitor RESR creates a zero for the
modulator at frequency fESR. These frequencies can be determined by the following:
This satisfies fLC 0.1 fRHP.
Bandwidth of Boost Converter, fC
Use the following guidelines to set the frequency poles, zeroes, and crossover values for the trade-off between
stability and transient response:
fLC < fESR< fC< fRHP Zero
fC< fRHP Zero / 3
fC< fSW / 6
fLC < fC/ 3
26 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
RIPPLE
C1
SW IN
RIPPLE
IN
SW C1
ESR RIPPLE ESR
I
V 10 mV
8 f C
I
C 194-μF
8 f V
V I R 40 mV
D = =
´ ´
= =
´ ´ D
D = ´ =
G/20
6 2
O
C
SW
10
R3 7.2 k
85 10 A / V V
10 10
C1 22 nF
2 f R3 2 10 kHz 7.2 k
C1 22 nF
C2 223 pF
f 200 kHz
2 7.2 k 22 nF 1
2 R3 C1 1 2
2
-
= = W
´ ´
= = =
p ´ ´ p ´ ´ W
= = =
æ ö æ ö
p ´ W ´ ´ -
p ´ ´ ´ - ç ÷
ç ÷ è ø
è ø
C C
LC ESR
10 kHz 10 kHz
G 40 log 20 log
3.1 kHz 6 kHz
f f
G 40 log 20 log
f f
15.9 dB= -
æ ö æ ö
= ç ÷ - ç ÷
ç ÷
ç ÷ è ø
è ø
æ ö æ ö =
ç ÷ ç ÷
è ø è ø
O
O ESR O
O C
I
V R I
4 C f
2.5 A
0.04 2.5 A 0.19 V
4 660 F 10 kHz
D
+D = ´ D ´ ´
= W ´ + =
´ m ´
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Output Ripple Voltage Due to Load Transients, VO
Assume a bandwidth of fC= 10 kHz.
Because the boost converter is active only during brief events such as a cranking pulse, and the buck converters
are high-voltage tolerant, a higher excursion on the boost output may be tolerable in some cases. In such cases,
smaller component choices for the boost output may be used.
Selection of Components for Type II Compensation
The required loop gain for unity-gain bandwidth (UGB) is
The boost-converter error amplifier (OTA) has a Gm that is proportional to the VBAT voltage. This allows a
constant loop response across the input-voltage range and makes it easier to compensate by removing the
dependency on VBAT.
Input Capacitor, CIN
The input ripple required is lower than 50 mV.
Therefore, our recommendation is 220 µF with 10-mΩESR.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 27
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
O
ON min
IN max SW
V3.3 V
t 275 ns
V f 30 V 400 kHz
= = =
´ ´
I Pk
I Pk
2
BOOSTFET Pk DS(on) r f SW
2
BOOSTFET
V I
2
V I
P (I ) r (1 TC) D (t t ) f
2
P (7.85 A) 0.02 (1 0.4) 0.53 (20 ns 20 ns) 200 kHz 1.07 W
´
´ ´ ´ ´ ´
´
æ ö
= ´ + ´ + ´ + ´
ç ÷
ç ÷
è ø
æ ö
= W + + + =
ç ÷
è ø
D D(PEAK) F
INMIN
out F
D
P I V (1 D)
V5 V
D 1 1 0.53
V V 10 V 0.6 V
P 7.85 A 0.6 V (1 0.53) 2.2 W
= ´ ´ -
= - = - =
+ +
= ´ ´ - =
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Output Schottky Diode D1 Selection
A Schottky diode with low forward conducting voltage VFover temperature and fast switching characteristics is
required to maximize efficiency. The reverse breakdown voltage should be higher than the maximum input
voltage, and the component should have low reverse leakage current. Additionally, the peak forward current
should be higher than the peak inductor current. The power dissipation in the Schottky diode is given by:
Because this is activated for the low-input-voltage profile related to the crank pulse, the duration is less than
25 ms.
Low-Side MOSFET (BOT_SW3)
The times trand tfdenote the rising and falling times of the switching node and are related to the gate-driver
strength of the TPS43330/2 and gate Miller capacitance of the MOSFET. The first term denotes the conduction
losses which are minimized when the on-resistance of the MOSFET is low. The second term denotes the
transition losses which arise due to the full application of the input voltage across the drain-source of the
MOSFET as it turns on or off. They are higher at high output currents and low input voltages (due to the large
input peak current) and when the switching time is low.
Note: The on-resistance, rDS(on), has a positive temperature coefficient, which produces the (TC = d × ΔT) term
that signifies the temperature dependence. (Temperature coefficient d is available as a normalized value from
MOSFET data sheets and can be assumed to be 0.005 / °C as a starting value.)
BuckA Component Selection
Minimum On-Time, tON min
This is higher than the minimum duty cycle specified (100 ns typical). Hence, the minimum duty cycle is
achievable at this frequency.
28 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Current-Sense Resistor RSENSE
Based on the typical characteristics for the VSENSE limit with VIN versus duty cycle, the sense limit is
approximately 65 mV (at VIN = 12 V and duty cycle of 5 V / 12 V = 0.416). Allowing for tolerances and ripple
currents, choose VSENSE maximum of 50 mV.
Select 15 m.
Inductor Selection L
As explained in the description of the buck controllers, for optimal slope compensation and loop response, the
inductor should be chosen such that:
KFLR = coil-selection constant = 200
Choose a standard value of 8.2 µH. For the buck converter, the inductor saturation currents and core should be
chosen to sustain the maximum currents.
Inductor Ripple Current IRIPPLE
At the nominal input voltage of 12 V, this gives a ripple current of 30% of IO max 1 A.
Output Capacitor CO
Select an output capacitance COof 100 µF with low ESR in the range of 10 m. This gives VO(Ripple) 15 mV
and a V drop of 180 mV during a load step, which does not trigger the power-good comparator and is within
the required limits.
Bandwidth of Buck Converter fC
Use the following guidelines to set frequency poles, zeroes, and crossover values for the trade-off between
stability and transient response.
Crossover frequency fCbetween fSW / 6 and fSW / 10. Assume fC= 50 kHz.
Select the zero fzfC/ 10
Make the second pole fP2 fSW / 2
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 29
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
C
CFB REF
BUCK
CO O
Gm R3 K V
f2 C V
1mS 24 k 8.33 S 0.8 V
f2 100 μF 5 V 50.9 kHz
´ ´
=
p ´
´ W ´ ´
=
p ´ ´
´
=
C
10 10
C1 1.33 nF
2 R3 f 2 24 k 50 kHz
= = =
p ´ ´ p ´ W ´
C O O
BUCK CFB REF BUCK CFB REF
2 f V C 2 50 kHz 5 V 100μF
R3 23.57 k
Gm K V Gm K V
p ´ ´ ´ p ´ ´ ´
= = = W
´ ´ ´ ´
Vref
RLCOMP
VSENSE
Type 2A
GmBUCK
RESR
C2
C1
R3
R1
R2
VO
R0
CO
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Selection of Components for Type II Compensation
Figure 27. Buck Compensation Components
where VO=5V,CO= 100 µF, GmBUCK = 1 mS, VREF = 0.8 V, KCFB = 0.125 / RSENSE = 8.33 S (0.125 is an
internal constant)
Use the standard value of R3 = 24 k.
Use standard value of 1.5 nF.
The resulting bandwidth of buck converter fC
This is close to the target bandwidth of 50 kHz.
The resulting zero frequency fZ1
This is close to the fC/ 10 guideline of 5 kHz.
The second pole frequency fP2
This is close to the fSW / 2 guideline of 200 kHz. Hence, all requirements for a good loop response are satisfied.
30 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
SW
C1
C2
2 R3 C1
1.1nF 27 pF
2 30 k 1.1 nF
f1
2
400 kHz 1
2
=
p ´ ´ ´
= =
p ´ W ´ ´
æ ö -
ç ÷
è ø
æ ö -
ç ÷
è ø
C
10 10
C1 1.1 nF
2 R3 f 2 30 k 50 kHz
= = =
p ´ ´ p ´ W ´
C O O
BUCK CFB REF
2 f V C
R3
Gm K V
2 50 kHz 3.3 V 100 F
1 mS 4.16 S 0.8 V
31k
p ´ ´ ´
=´ ´
p ´ ´ ´ m
´ ´
= = W
O
ON min
IN max SW
V3.3 V
t 275 ns
V f 30 V 400 kHz
= = =
´ ´
REF
O
V0.8 V 0.16
V 5 V
b = = =
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Resistor Divider Selection for Setting VOVoltage
Choose the divider current through R1 and R2 to be 50 µA. Then
And
Therefore, R2 = 16 kand R1 = 84 k.
BuckB Component Selection
Using the same method as for VBUCKA, the following parameters and components are realized.
This is higher than the min duty cycle specified (100 ns typical).
Iripple current 0.4 A (approx. 20% of IO max)
Select an output capacitance COof 100 µF with low ESR in the range of 10 m. This gives VO(ripple) 7.5 mV
and V drop of 120 mV during a load step.
Assume fC= 50 kHz.
Use standard value of R3 = 30 k.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 31
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
REF
O
V0.8 V
V 3.3 V
0.242b = = =
P2
1 1
f2 R3 C2 2 30 k 27 pF 196 kHz=
p ´ ´ p ´ W ´
= =
Z1
1 1
f 4.8 kHz
2 R3 C1 2 30 k 1.1 nF
= = =
p ´ ´ p ´ W ´
BUCK CFB REF
C
O O
Gm R3 K V
f2 C V
1mS 30 k 4.16 S 0.8 V 48 kHz
2 100 μF 3.3 V
´ ´
=
p ´
´ W ´ ´
= =
p ´ ´
´
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
This is close to the target bandwidth of 50 kHz.
The resulting zero frequency fZ1
This is close to the fCguideline of 5 kHz.
The second pole frequency fP2
This is close to the fSW / 2 guideline of 200 kHz.
Hence, all requirements for a good loop response are satisfied.
Resistor Divider Selection for Setting VOVoltage
Choose the divider current through R1 and R2 to be 50 µA. Then
And
Therefore, R2 = 16 kand R1 = 50 k.
32 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
2
buckLOWERFET O DS(on) F O d SW
P (I ) r (1 TC) (1 D) V I (2 t ) f= ´ + ´ - + ´ ´ ´ ´
2I O
BuckTOPFET O DS(on) r f SW
2
V I
P (I ) r (1 TC) D (t t ) f
´
æ ö
= ´ + ´ + ´ + ´
ç ÷
è ø
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
BuckX High-Side and Low-Side N-Channel MOSFETs
The gate-drive supply for these MOSFETs is supplied by an internal supply, which is 5.8 V typical under normal
operating conditions. The output is a totem pole, allowing full voltage drive of VREG to the gate with peak output
current of 1.2 A. The high-side MOSFET is referenced to a floating node at the phase terminal (PHx), and the
low-side MOSFET is referenced to the power-ground (PGx) terminal. For a particular application, these
MOSFETs should be selected with consideration for the following parameters: rDS(on), gate charge Qg, drain-to-
source breakdown voltage BVDSS, maximum dc current IDC(max), and thermal resistance for the package.
The times trand tfdenote the rising and falling times of the switching node and are related to the gate-driver
strength of the TPS43330-Q1 and TPS43332-Q1, and the gate Miller capacitance of the MOSFET. The first term
denotes the conduction losses, which are minimized when the on-resistance of the MOSFET is low. The second
term denotes the transition losses, which arise due to the full application of the input voltage across the drain-
source of the MOSFET as it turns on or off. They are lower at low currents and when the switching time is low.
In addition, during the dead time tdwhen both the MOSFETs are off, the body diode of the low-side MOSFET
conducts, increasing the losses. This is denoted by the second term in the above equation. Using external
Schottky diodes in parallel with the low-side MOSFETs of the buck converters helps to reduce this loss.
Note: rDS(on) has a positive temperature coefficient, which is accounted for in the TC term for rDS(on). TC = d ×
ΔT[°C]. The temperature coefficient d is available as a normalized value from MOSFET data sheets and can be
assumed to be 0.005 / ºC as a starting value.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 33
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
VBAT
TPS43330-Q1
or
TPS43332-Q1
2.5V to 40V
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
3.9µH
0.1µF
0.1µF
0.1µF
3.3µF
10nF
10nF
1nF
5kΩ5kΩ
100µF
COUTB
15µH
0.03Ω VBUCKB 3.3V, 6.6W
8.2µH
10µF 680µF
COUT1
100µF
COUTA
VBUCKA - 5V, 15W 0.015Ω
7.2kΩ
22nF
220pF
24kΩ
1.5nF
33pF 30kΩ 1.1nF 27pF
16kΩ
50kΩ
16kΩ
84kΩ
TOP-SW1
BOT-SW1 BOT-SW2
TOP-SW2
TOP-SW3
BOT-SW3
C
220µF
IN
1kΩ
L1
L2 L3
D1
0.02Ω
BOOST 10V, 25W
1.5kΩ
1nF
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Schematics
The following section summarizes the previously calculated example and gives schematic and component
proposals.
Table 4. Application Example 1
PARAMETER VBUCK A VBUCK B BOOST
VIN 6 V to 30 V VIN 6 V to 30 V VBAT - 5 V (cranking
Input voltage 12 V - typical 12 V - typical pulse input) to 30 V
Output voltage, VO5 V 3.3 V 10 V
Maximum output current, IO3 A 2 A 2.5 A
Load step output tolerance, VO±0.2 V ±0.12 V ±0.5 V
Current output load step, IO0.1 A to 3 A 0.1 A to 2 A 0.1 A to 2.5 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz
Figure 28. Simplified Application Schematic, Example 1
Table 5. Application Example 1 Component Proposals
Name Component Proposal Value
L1 MSS1278T-392NL (Coilcraft) 4 µH
L2 MSS1278T-822ML (Coilcraft) 8.2 µH
L3 MSS1278T-153ML (Coilcraft) 15 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1J681M (Panasonic) 680 µF
COUTA, COUTB ECASD91A107M010K00 (Murata) 100 µF
CIN EEEFK1V331P (Panasonic) 220 µF
34 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
VBAT
TPS43330-Q1
or
TPS43332-Q1
5V to 30V
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
3.9µH
0.1µF
0.1µF
0.1µF
3.3µF
10nF
10nF
1nF
5kΩ5kΩ
330µF
COUTB
6.8µH
0.01Ω VBUCKB 3.3V, 16.5W
10µH
10µF 1.5mF
COUT1
150µF
COUTA
VBUCKA - 5V, 13.5W 0.015Ω
6.2kΩ
47nF
330pF
24kΩ
1.8nF
47pF 27kΩ 1.5nF 47pF
16kΩ
50kΩ
16kΩ
84kΩ
TOP-SW1
BOT-SW1 BOT-SW2
TOP-SW2
TOP-SW3
BOT-SW3
C
330µF
IN
1kΩ
L1
L2 L3
D1
0.015Ω
BOOST 10V, 25W
1.5kΩ
560pF
80kΩ
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Table 6. Application Example 2
PARAMETER VBUCK A VBUCK B BOOST
VIN 5 V to 30 V VIN 6 V to 30 V VBAT - 5 V (cranking
Input voltage 12 V - typical 12 V - typ pulse input) to 30V
Output voltage, VO5 V 3.3 V 10 V
Maximum output current, IO2.7 A 5 A 3 A
Load step output tolerance, VO±0.2 V ±0.12 V ±0.5 V
Current output load step, IO0.1 A to 2.7 A 0.1 A to 5 A 0.1 A to 3 A
Converter switching frequency, fSW 300 kHz 300 kHz 150 kHz
Figure 29. Simplified Application Schematic, Example 2
Table 7. Application Example 2 Component Proposals
Name Component Proposal Value
L1 MSS1278T-392NL (Coilcraft) 3.9 µH
L2 MSS1278T-103ML (Coilcraft) 10 µH
L3 MSS1278T-682ML (Coilcraft) 6.8 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1V152M (Panasonic) 1.5 mF
COUTA ECASD91A157M010K00 (Murata) 150 µF
COUTB ECASD90G337M008K00 (Murata) 330 µF
CIN EEEFK1V331P (Panasonic) 330 µF
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 35
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
VBAT
TPS43330-Q1
or
TPS43332-Q1
5V to 30V
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
3.9µH
0.1µF
0.1µF
0.1µF
3.3µF
10nF
10nF
1nF
5kΩ5kΩ
100µF
COUTB
22µH
0.045Ω VBUCKB 3.3V, 16.5W
10µH
10µF 470µF
COUT1
150µF
COUTA
VBUCKA - 5V, 15W 0.015Ω
8.2kΩ
18nF
220pF
39kΩ
1nF
20pF 36kΩ 1nF 47pF
16kΩ
34kΩ
16kΩ
84kΩ
TOP-SW1
BOT-SW1 BOT-SW2
TOP-SW2
TOP-SW3
BOT-SW3
C
330µF
IN
1kΩ
L1
L2 L3
D1
0.03Ω
BOOST 10V, 20W
1.5kΩ
470pF
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
Table 8. Application Example 3
PARAMETER VBUCK A VBUCK B BOOST
VIN 5 V to 30 V VIN 6 V to 30 V VBAT - 5 V (cranking
Input voltage 12 V - typical 12 V - typical pulse input) to 30 V
Output voltage, VO5 V 2.5 V 10 V
Maximum output current, IO3 A 1 A 2 A
Load step output tolerance, VO±0.2 V ±0.12 V ±0.5 V
Current output load step, IO0.1 A to 3 A 0.1 A to 1 A 0.1 A to 2 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz
Figure 30. Simplified Application Schematic, Example 3
Table 9. Application Example 3 Component Proposals
Name Component Proposal Value
L1 MSS1278T-392NL (Coilcraft) 3.9 µH
L2 MSS1278T-822ML (Coilcraft) 8.2 µH
L3 MSS1278T-223ML (Coilcraft) 22 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1V471Q (Panasonic) 470 µF
COUTA ECASD91A157M010K00 (Murata) 150 µF
COUTB ECASD40J107M015K00 (Murata) 100 µF
CIN EEEFK1V331P (Panasonic) 330 µF
36 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
TPS43330-Q1
TPS43332-Q1
www.ti.com
SLVSA82C MARCH 2011REVISED JULY 2012
Power Dissipation Derating Profile, 38-Pin HTTSOP PowerPAD Package
Figure 31. Power Dissipation Derating Profile Based on High-K JEDEC PCB
PCB Layout Guidelines
Grounding and PCB Circuit Layout Considerations
Boost converter
1. The path formed from the input capacitor to the inductor and BOT_SW3 with the low side-current sense-
resistor should have short leads and PC trace lengths. The same applies for the trace from the inductor to
Schottky diode D1 to the COUT1 capacitor. The negative terminal of the input capacitor and the negative
terminal of the sense resistor must be connected together with short trace lengths.
2. The overcurrent-sensing shunt resistor may require noise filtering, and this capacitor should be close to the
IC pin.
Buck Converter
1. Connect the drain of TOP_SW1 and TOP_SW2 together with the positive terminal of input capacitor COUT1.
The trace length between these terminals should be short.
2. Connect a local decoupling capacitor between the drain of TOP_SWx and the source of BOT_SWx.
3. The Kelvin-current sensing for the shunt resistor should have traces with minimum spacing, routed in parallel
with each other. Any filtering capacitors for noise should be placed near the IC pins.
4. The resistor divider for sensing the output voltage is connected between the positive terminal of its respective
output capacitor and COUTA or COUTB and the IC signal ground. These components and the traces should
not be routed near any switching nodes or high-current traces.
Other Considerations
1. PGNDx and AGND should be shorted to the thermal pad. Use a star ground configuration if connecting to a
non-ground plane system. Use tie-ins for the EXTSUP capacitor, compensation-network ground, and
voltage-sense feedback ground networks to this star ground.
2. Connect a compensation network between the compensation pins and IC signal ground. Connect the
oscillator resistor (frequency setting) between the RT pin and IC signal ground. These sensitive circuits
should NOT be located near the dv/dt nodes; these include the gate-drive outputs, phase pins, and boost
circuits (bootstrap).
3. Reduce the surface area of the high-current-carrying loops to a minimum, by ensuring optimal component
placement. Ensure the bypass capacitors are located as close as possible to their respective power and
ground pins.
Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 37
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC
V IN
EXTSUP
D IV
VREG
CBB
GB1
PHB
GB2
PGNDB
SB1
SB2
FBB
COMPB
SSB
PGB
AGND
RT
DLYAB
SYNC
VBUCKA
VBUCKB
POW ER
INPUT
VBOOST
Exposed Pad
connec ted to GND
P lane
M ic ro con tro ller
Pow er L ines
Connec tion to GND P lane o f PCB th rough v ias
Connec tion to top /bo ttom o fPCB through v ias
Vo ltage Ra ilO u tpu ts
TPS43330-Q1
TPS43332-Q1
SLVSA82C MARCH 2011REVISED JULY 2012
www.ti.com
PCB Layout
REVISION HISTORY
Changes from Revision B (July 2012) to Revision C Page
Corrected year of revision date from 2011 to 2012 .............................................................................................................. 1
38 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS43330-Q1 TPS43332-Q1
PACKAGE OPTION ADDENDUM
www.ti.com 23-Jul-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TPS43330QDAPRQ1 ACTIVE HTSSOP DAP 38 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
TPS43332QDAPRQ1 ACTIVE HTSSOP DAP 38 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All
semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time
of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components which meet ISO/TS16949 requirements, mainly for automotive use. Components which
have not been so designated are neither designed nor intended for automotive use; and TI will not be responsible for any failure of such
components to meet such requirements.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Mobile Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2012, Texas Instruments Incorporated