MIL-PRF-19500/116L
8 June 2001
SUPERSEDING
MIL-PRF-19500/116K
28 February 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,
1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS1N4148-1 (see 6.4). Device types 1N914
and 1N4531 are inactive for new design.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device.
1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.
1.3 Maximum ratings.
Type V(BR) VRWM Io
TA = 25
q
CIFSM
tp =
1/120 s
TSTG Top Z
T
JX R
T
JL R
T
JC
V dc V (pk) mA A (pk)
q
C
q
C
q
C/W
q
C/W
q
C/W
1N914, UR 100 75 75 (1) 1 -65 to +200 -65 to +175 70 N/A
1N4531, UR 100 75 125 (2) 1 -65 to +200 -65 to +175 70 250 N/A
1N4148-1, UR-1 100 75 200 (3) 2 -65 to +200 -65 to +200 70 (leaded) N/A
1N4148UB,
1N4148UB2,
1N4148UB2R,
1N4148UBCA,
1N4148UBCC,
1N4148UBCD,
100 75 200 (3) 2 -65 to +200 -65 to +200 70 100(UR) 150
(1) Derate at 0.5 mA/
q
C above TA = 25
q
C.
(2) Derate at 0.83 mA/
q
C above TA = 25
q
C.
(3) Derate at 1.14 mA/
q
C above TA = 25
q
C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH POUND
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 8 September 2001.
MIL-PRF-19500/116L
2
1.4 Primary electrical characteristics at TA = +25
q
C, unless otherwise indicated.
Type
(1) VF1 VF2 IR1 at
VR = 20 V dc IR2 at
VR = 75 V dc
1N914
1N4148-1
1N4531
IF mA dc
10
10
10
V dc
0.8
0.8
0.8
IF mA dc
50
100
100
V dc
1.2
1.2
1.2
nA dc
25
25
25
P
A dc
0.5
0.5
0.5
Type
(1) IR3 at
VR = 20 V dc
TA = 150
q
C
IR4 at
VR = 75 V dc
TA = 150
q
C
tfr at
Vfr = 5.0 V dc (pk) and
IF = 50 mA dc
trr
1N914
1N4148-1
1N4531
P
A dc
35
35
35
P
A dc
75
75
75
ns
20
20
20
ns
5
5
5
(1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mount
devices unless otherwise noted.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
MIL-PRF-19500/116L
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Types Dimensions Notes
Ltr Inches Millimeters 1, 2
Min Max Min Max
1N4148-1 BL .140 .180 3.56 4.57 3
1N914 BD .056 .075 1.42 1.90 4
LL 1.000 1.500 25.40 38.10
LD .018 .022 0.46 0.56 5
1N4531 BL .080 .120 2.03 3.05
BD .050 .075 1.27 1.90 4
LL 1.000 1.500 25.40 38.10
LD .018 .022 0.46 0.56 5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL.
4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL.
5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1,
and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead
shall not exceed BD.
FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531.
MIL-PRF-19500/116L
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Symbol Dimensions
Inches Millimeters
Min Max Min Max
BD .063 .067 1.60 1.70
ECT .016 .022 0.41 0.55
BL .130 .146 3.30 3.70
S .001 min 0.03 min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions 1N914UR, 1N4148UR-1, AND 1N4531UR.
MIL-PRF-19500/116L
5
132
1N4148UBCA 1 1N4148UB
23
11
3 1N4148UBD 3 1N4148UBCC
22
Dimensions
Symbol Inches Millimeters Symbol Inches Millimeters
Min Max Min Max Min Max Min Max
A 0.046 0.056 0.97 1.42 D1 0.071 0.078 1.81 2.01
A1 0.017 0.023 0.43 0.58 D2
B1 0.016 0.024 0.41 0.61 D3
B2 0.016 0.024 0.41 0.61 E 0.115 0.125 2.82 3.18
B3 0.016 0.024 0.41 0.61 E3 - - - - - -
D 0.085 0.105 2.41 2.67 L1 0.022 0.038 0.56 0.96
L2 0.024 0.036 0.61 0.81
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Ceramic package only.
FIGURE 3. Physical dimensions, surface mount (UB versions).
MIL-PRF-19500/116L
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Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
A 0.046 0.056 0.97 1.42
A1 0.017 0.035 0.43 0.89
B1 0.016 0.024 0.41 0.61 Typ
B2 0.016 0.024 0.41 0.61 Typ
R2 0.012 0.3 Typ
D 0.085 0.108 2.41 2.74
D1 0.071 0.078 1.81 2.01
D2 0.035 0.039 0.89 0.99
D3 0.085 0.108 2.41 2.74
E 0.115 0.128 2.82 3.25
E3 - - - 0.128 - - - 3.25
L1 0.022 0.038 0.56 0.96
R3 0.008R 0.2R
R1 0.022R 0.55R
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 4. Physical dimensions, surface mount (2 pin UB version).
MIL-PRF-19500/116L
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Dimensions
Ltr Inches Millimeters
Min Max Min Max
A .0059 .0061 .150 .155
B .0130 .0170 .330 .430
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Element evaluation accomplished utilizing TO-5 package.
4. The physical chara cteristic s of the die are:
Metallization:
Top (anode): Al.
Back (cathode): Au.
Al thickness: 25,000 Ã… minimum.
Gold thickness: 4,000 Ã… mi nim um.
Chip thickness: .010 inches (.25 mm)
r
.002 inches (.05 mm).
FIGURE 5. Physical dimensions, JANHCA and JANKCA die.
MIL-PRF-19500/116L
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2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
Vfr Forward recovery voltage. Specified maximum forward voltage used to determine forward recovery
time.
LS Lead spacing distance between device body and electrical/mechanical contact on lead.
UB Hermetic unleaded 3 terminal (LCC, Leadless Chip Carrier) package type.
UR Unleaded round package type designation.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded double plug construction
in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). The UB package shall be wire
bonded, eutectically mounted devices.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.7.1 UR devices. "UR" devices shall be marked with a cathode band only. Initial container package marking shall
be in accordance with MIL-PRF-19500.
3.7.2 UB devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification
and date code shall be marked on the devices.
3.7.3 UBR devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification
and date code shall be marked on the devices.
3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color
coding will be permitted. UB packages do not require polarity marking.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
MIL-PRF-19500/116L
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4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein.
4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV Measurement
of MIL-PRF-19500) JAN level JANTX and JANTXV levels
3a Temperature cycling in accordance
with MIL-PRF-19500 TX level. Temperature cycling
3c (1) Thermal impedance (see 4.5.5) Thermal impedance (see 4.5.5)
9 Not applicable Not applicable
10 (2) Not applicable Method 1038, condition A, t = 48 hours
11 Not applicable IR1 and VF1
12 Not applicable See 4.3.1, t = 48 hours
13 Not applicable (3) Subgroup 2 of table I herein;
'
IR1 = 100 percent of initial reading or 15 nA,
whichever is greater;
'
VF1 = 25 mV dc.
PDA = 10 percent
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
(2) Test within 24 hours after removal from test.
(3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.
4.3.1 Burn-in test conditions. Burn-in conditions are as follows:
Type TA +30
q
C
r
5
q
C
VRWM = 75 V (pk)
f = 50 - 60 Hz
TA = +30
q
C
r
5
q
C
1N914, 1N914UR IO = 75 mA IF =150 mA min
1N4531, 1N4531UR IO = 125 mA IF = 175 mA min
1N4148-1, 1N4148UR-1, 1N4148UB,
1N4148UB2, 1N4148UBR2 IO = 200 mA I F = 200 mA min
MIL-PRF-19500/116L
10
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as specified herein. Electrical
measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal
impedance test.
4.4.2.1 Group B inspection, table VIb (JANTX, JANTXV) of MIL-PRF-19500.
Subgroup Method Conditions
B2 2005 IF = 100 mA, axial tensile stress = 8 lbs, TA = +150
q
C; (not applicable to UR or UB
package). (This test shall be performed as the first test of subgroup 2).
B3 1027 TA = +30
q
C
r
5
q
C, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1); 1N914: IO = 5 mA,
1N4531: IO = 125 mA, 1N4148-1: IO = 200 mA.
B4 2075 See 4.5.4 herein.
B5 3101 R
T
JL = 250
q
C/W, .375 inch (9.52 mm) lead length (non-surface mount).
or 4081 R
T
JL 100
q
C/W (UR), R
T
JC = 150
q
C/W (UB).
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test.
Subgroup Method Conditions
C2 1056 100 cycles.
C2 2036 Tension: Test condition A, t = 15 seconds, weight = 10 pounds. Lead fatigue:
Test condition E. Terminal strength and lead fatigue not applicable to
UB or UR devices.
C6 1026 TA = +30
q
C
r
5
q
C, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1), for:
1N914 IO = 75 mA.
1N4531 IO = 125 mA.
1N4148-1 IO = 200 mA.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750.
4.5.2 Life tests. AC tests shall be conducted with a half-sine wave of the peak voltage specified herein impressed
across the diode in the reverse direction, followed by a half-sine waveform of the average rectified current specified
herein. The forward conduction angle of the rectified current shall be not greater than 180 degree nor less than
150 degree.
MIL-PRF-19500/116L
11
4.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between
zero time and the point where the pulse has decreased to 110 percent of the steady-state value of VF when
IF = 50 mA dc. The maximum rise time of the response detector shall be 1 ns.
4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with
diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the
plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may
be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction
verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers’ normal
delidding procedures.
4.5.5 Thermal impedance (Z
T
JX measurements). Thermal impedance measurements shall be in accordance
method 3101 MIL-STD-750, and as follows.
a. IH = 300 mA to 500 mA.
b. tH = 10 ms.
c. IM = 1 mA to 10 mA.
d. tMD = 70
P
s maximum.
The maximum limit for Z
T
JX under these test conditions is Z
T
JX = 70
q
C/W.
4.5.5.1 For initial qualification or requalification. Read and record data (Z
T
JX) shall be supplied to the qualifying
activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be
serialized and provided to the qualifying activity for test correlation.
4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101
MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device
during test. The maximum limit for R
T
JL under these test conditions shall be as shown in group B of 4.4.2.1 and
group E of table II. The following conditions shall apply when using method 3101:
a. IH - - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA.
b. tH - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum.
c. IM - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA.
d. tMD - - - - - - - - - - - - - - - - - - - - - - - - - - 70
P
s maximum.
MIL-PRF-19500/116L
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4.5.6.1 Lead spacing for leaded devices:
LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 6.
FIGURE 6. Mounting conditions.
4.5.6.2 Temperature reference (Tr ) unleaded devices (UB, UR suffix). The temperature reference point shall be
the hottest portion of the external surface. As an alternate, the temperature of a stream of liquid used to cool the
device during the test may be used as the temperature reference point.
MIL-PRF-19500/116L
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TABLE I. Group A inspection.
MIL-STD-750 Limits
Inspection 1/ Method Conditions Symbol Min Max Unit
Subgroup 1
Visual and mechanical
inspection 2071
Subgroup 2
Thermal impedance 3101 See 4.5.5 Z
T
JX 70
q
C/W
Forward voltage 4011 IF = 10 mA dc VF1 0.8 V dc
Breakdown voltage 4021 IR = 100
P
A dc VBR1 100 V dc
Reverse current
1N914
1N4531
1N4148-1
4016 DC method
VR = 20 V dc IR1
25
25
25
nA dc
nA dc
nA dc
Reverse current 4016 DC method
VR = 75 V dc IR2 500 nA dc
Forward voltage 4011
IF = 50 mA dc
IF = 100 mA dc
IF = 100 mA dc
VF2
1.2
1.2
1.2
V dc
V dc
V dc
Subgroup 3
High temperature
operation: TA = +150
q
C
Reverse current
1N914
1N4531
1N4148-1
4016 DC method
VR = 20 V dc IR3 35
P
A dc
Reverse current
1N914
1N4531
1N4148-1
4016 DC method
VR = 75 V dc IR4
75
75
75
P
A dc
P
A dc
P
A dc
Forward voltage
1N914
1N4531
1N4148-1
4011 IF = 10 mA dc VF3
0.8
0.8
0.8
V dc
V dc
V dc
See footnote at end of table.
MIL-PRF-19500/116L
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TABLE I. Group A inspection - Continued.
MIL-STD-750 Limits
Inspection 1/ Method Conditions Symbol Min Max Unit
Subgroup 3 -
Continued
Low temperature
operation: TA = -55
q
C
Forward voltage 4011 VF4
1N914
1N4531
1N4148-1
IF = 50 mA dc
IF = 100 mA dc
IF = 100 mA dc
1.3
1.3
1.3
V dc
V dc
V dc
Subgroup 4
Junction capacitance 4001 VR = 0 V dc, f = 1 MHz,
Vsig = 50 mVp-p maximum C1
1N914
1N4531
1N4148-1
4.0
4.0
4.0
pF
pF
pF
Junction capacitance 4001 VR = 1.5 V dc, f = 1 MHz,
Vsig = 50 mVp-p maximum C22.8 pF
Reverse recovery time 4031 Condition A
C > 1 nF, IF = IR = 10 mA dc, RL = 100
:
r
5%
IR(REC) = 1.0 mA dc, R
t
1000
:
.
trr 5ns
1N914
1N4531
1N4148-1
Subgroup 5
Not applicable
See footnote at end of table.
MIL-PRF-19500/116L
15
TABLE I. Group A inspection - Continued.
MIL-STD-750 Limits
Inspection 1/ Method Conditions Symbol Min Max Unit
Subgroup 6
Surge current 4066 Condition A (sine wave)
if(surge) = 1 A (pk) for 1N914 and 1N4531
if(surge) = 2 A (pk) for 1N4148-1, UR and
1N4148UB, IO = maximum rated
dc current = 0
VRM = 0
10 surges, 8.3 ms width each,
one surge per minute, TA = +25
q
C
or
Condition B (square wave)
IF(surge) = 0.704 A (pk) for
1N914, 1N4531, and 1N4148UB
IF(surge) = 1.41 A (pk) for
1N4148-1
tp = 8.3 ms
n = 10
d.f. = 0.0055%
TA = 2 5
q
C
Electrical measuremen ts See table I, subgroup 2
Subgroup 7
Forward recovery
voltage and time 4026 IF = 50 mA dc
(see 4.5.2) Vfr
tfr
5.0
20 V (pk)
ns
1/ For sampling plan, see MIL-PRF-19500.
MIL-PRF-19500/116L
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TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection 1/ Method Conditions Sampling plan
Subgroup 1 45 devices c = 0
Thermal shock
glass strain) 1056 1,000 cycles
Electrical measurements See table I, subgroup 2
Subgroup 2 45 devices c = 0
Intermittent
operating life
Electrical measuremen ts
1037 10,000 cycles
See table I, subgroup 2
Subgroup 3
Not applicable
Subgroup 4 22 devices c = 0
Thermal resistance
surface mount 3101
or
4081
R
4
JEC = 100
q
C/W (maximum) at zero lead length
(for UR),
R
4
JEC = 150
q
C/W (maximum) for UB.
(see 4.5.6), +25
q
C
d
TR
d
+35
q
C
Thermal resistance
leaded devices 3101
or
4081
R
4
JEC = 250
q
C/W (maximum)
+25
q
C
d
TR
d
+35
q
C, (see 4.5.6)
tH
t
25s in still air.
Subgroup 5 22 devices c = 0
Monitored mission
temperature cycling 1055 Not required for UB suffix devices.
Electrical measurements See table I, subgroup 2
MIL-PRF-19500/116L
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5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Point’s packaging activity within the Military Department or Defense Agency, or
within the Military Department’s System Command. Packaging data retrieval is available from the managing Military
Department’s or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
e. Type designation and product assurance level.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,
Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Cross reference substitution information. The JANS version of 1N6638, 1N6642, or 1N6643
(MIL-S-19500/578) is preferred in lieu of the JANS1N4148-1. The JANS 1N6638 or 1N6642 is substitutable for the
JANS 1N4148-1 and shall be used in lieu of the JANS1N4148-1. A PIN for PIN replacement table follows, and these
devices are directly interchangeable.
JANS
Non-preferred
PIN
JANS
superseded
PIN
1N4148-1 1N6638
1N6642
MIL-PRF-19500/116L
18
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA1N4148) will be identified on the QPL.
JANC ordering information
PIN Manufacturer
55801
1N4148-1
1N4148-1 JANHCA1N4148
JANKCA1N4148
6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extent of the changes.
Custodians: Preparing activity
Army - CR DLA - CC
Navy - NW
Air Force - 11
DLA - CC (Project 5961-2422)
Review activities:
Army - AR, MI, SM
Navy - AS, CG, MC
Air Force - 19, 99
STANDARDIZATION DOCUMENT IM PROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER
MIL-PRF-19500/116K 2. DOCUMENT DATE
13 July 2001
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1,
1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial) b. ORGANIZATION
c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99
