Germanium Transistors Type Case 3 = Maximum Ratings at 25C amb. Characteristics SPECIAL No. 3 3 FEATURES 23 ge | Ree fy VeecsaT) ~ aii C ~ oc a + Vee | Vee | Ves | Je | Pret Io | Min.| Max.) Ie Min. le Ip Max. Vv Vv Vv A w A A Mc/s A A Vv PNP 2N524 TOS A 45 | 30 | 15 | 05 0-225| 0-1 231 | 0-001 0-8 _ 0-002 0-13 Medium 2N525 TOS A 45 | ~30 | 15 |] 05 0-225) 0-1 30 | | 0-001 1-0 - 0-002 | 0:13 Power 2N526 TO5 A -45 {| -30 |.-15 | 0-5 0-225] 0-1 47} | 0-001 1:3 0-002 | 0-13 2N527 TOS A 45 | 30 | 15 | 0-5 0-225; 0-1 65 | | 0-001 15 _ 0-002 | 0-03 2N1141 DM | 35 _ 1-0} 0-1 0-75 | 0-01 10} | 0-01 400 0-05 0-01 2 2N1142 DM | 30 _ 0-7| 0-1 0-75 | 0-01 10 | | 0-01 310 0-05 0-01 2 2N1143 DM | 25 _ 0-5| 0-1 0-75 | 0-01 10 | | 0-01 250 0-05 0-01 2 PNP 2N456A TO3 A 40 | 40 | 20 7 | 150 | --5 30}; 90 | -1 10-43) | 5 05 05 High 2N457A TO3 A 60 | -60 | 20 7 | 150t | --5 30} 90} -1 $043 | 5 05 0-5 Power 2N458A TOS A 80 | 80 | 20 7 | 150t | -5 30 | 90} -1 10-43 5 05 0-5 2N511 MD4 A -40 | 40 | -30] 10 80t | --10 10; |-1 10-26 -10 15 0-5 = 26220 2N511A MD4 A ~60 | -60 | 30] 10 sot | 10 10} |-1 1026 | 10 155 05 = 26221 2N511B MD4 A 80 | 80 | 30] 10 80t | 10 10} {|-1 1026 10 15 05 = 26222 2N512 MD4 A -40 | 40 | -30] 15 80t | --15 10] |-1 $0-28 15 2:25 0-75 | =2G6223 2N512A MD4 A 60 | -60 | -30/ 15 sot | -15 10} |-1 $0-28 15 2-25 ~075 | 26224 2N512B MD4 A 80 | 80 | 30]| 15 sot | 15 10; | -1 40-28 15 2-25 0-75 | =2G6225 2N513 MD4 A 40 | 40 | 30]| 20 sot | 20 10; |-1 {0-3 20 3-0 1-25 | =26226 2N513A MD4 A 60 | 60 | 30]| 20 80t | --20 10; |-1 10-3 20 3-0 1:25 | =26227 2N513B MD4 A 80 | 80 | 30| 20 80t | 20 10} | -1 10-3 20 3-0 1-25 | =2G6228 2N514 MD4 A 40 | 40 | -30] 25 80t | -25 10} |-1 10-43 | 25 3-75 1:25 | =26229 2N514A MD4 A 60 | 60 | 30| 25 80t | --25 10} | -1 30-43 | 25 3-75 1:25 | =26230 2N514B MD4 A 80 | 80 | 30| 25 80f | 25 10} |1 30-43 25 3-75 1:25 | =2G6231 2N1021 TOS A ~100 | 100 | 20 7 | 150t | --5 30 | 90] 1 $0-43 5 05 -05 2N1022 TO3 A 120 | 120 | 20 7 | 150t | -5 30} 90] 1 10-43 {| 5 05 ~-05 2N1046 TOS AD | 100 | 50 | 20] 20 sor; 5 60 | 200 | 0-5A| 20 5 05 04 2N1907 TO3 AD | 100 | 100 | 1-5] 20 | 150 } --15 10]; |-1 20 15 15 1:0 2N1908 TO3 AD | 130 | 1380 | 1:5| 20 | 150t | 15 10) |} -1 20 15 155 1:0 TI3027 TO3 A 45 | 40 | 20 7 | 150t | -3 40 | 250 | -1 0-2 3 03 -05 T3028 TO3 A 60 | 50 | 20 7 | 150t | -3 40 | 250 | 1 0-2 3 -03 05 TI3029 TO3 A ~30 | 55 | 20 7 =| 150+ | 3 40 | 250 | -1 0-2 +3 03 05 TI3030 TOs A 100 | 60 | 20 7 {| 150+ | -3 40 | 250 | -1 0-2 -3 -03 05 T13031 TO3 A 120 | 65 | 20 7 | 150t | -3 40 | 250 | 1 0-2 3 0:3 -05 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hre: Under fr: Under Dissipation: A Alloyed * Ne o fhtb t dissipation at Tcase = 25C D Diffused A fhte E Epitaxial! t - typical G Grown M Mesa P Planar The transistor types tabulated in pp 7-17 form the Texas Instruments Limited Preferred and Guidance list for new designs. In addition, the types listed overleaf are readily available. Omission of a type from the Preferred list does not imply that 18 a limit has been set to the production life.