2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. http://onsemi.com Features SCRs 16 AMPERES RMS 50 thru 800 VOLTS * Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal * * Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V These are Pb-Free Devices G A K MAXIMUM RATINGS* (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = *40 to 125C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM On-State Current RMS (180 Conduction Angles; TC = 100C) IT(RMS) 16 A Average On-State Current (180 Conduction Angles; TC = 100C) IT(AV) 10 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 25C) ITSM 160 A Circuit Fusing Considerations (t = 8.3 ms) I2t 145 A2s Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 100C) PGM 20 W Forward Average Gate Power (t = 8.3 ms, TC = 100C) PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 100C) IGM 2.0 A Value V TO-220AB CASE 221A STYLE 3 TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. September, 2011 - Rev. 5 4 50 100 200 400 600 800 Operating Junction Temperature Range (c) Semiconductor Components Industries, LLC, 2011 MARKING DIAGRAM Unit 1 1 2 2N604xG AYWW 3 x A Y WW G = 0, 1, 2, 3, 4 or 5 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: 2N6400/D 2N6400 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Symbol Max Unit RqJC 1.5 C/W TL 260 C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit - - - - 10 2.0 mA mA OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM ON CHARACTERISTICS *Peak Forward On-State Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%) VTM - - 1.7 V * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W) IGT - - 9.0 - 30 60 mA - - 0.7 - 1.5 2.5 * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W) TC = 25C TC = -40C VGT TC = 25C TC = -40C V Gate Non-Trigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125C VGD 0.2 - - V * Holding Current TC = 25C (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) *TC = -40C IH - 18 40 mA - - 60 Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) tgt - 1.0 - Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) TC = 25C TJ = +125C tq - - 15 35 - - - 50 - ms ms DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) TJ = +125C *Indicates JEDEC Registered Data. http://onsemi.com 2 dv/dt V/ms 2N6400 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode - 16 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE ( C) 128 124 = CONDUCTION ANGLE 120 116 112 dc 108 104 = 30 180 60 90 180 14 TJ 125C 100 10 5.0 6.0 7.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS) 10 Figure 1. Average Current Derating dc = 30 8.0 6.0 4.0 = CONDUCTION ANGLE 0 0 120 60 2.0 120 90 12 5.0 6.0 1.0 2.0 3.0 4.0 7.0 8.0 9.0 IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS) 0 10 Figure 2. Maximum On-State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 50 30 20 TJ = 25C 10 125C 7.0 5.0 160 3.0 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) iTM , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS) 70 2.0 150 140 1.0 0.7 130 0.5 TJ = 125C f = 60 Hz 120 0.3 110 0.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 4.0 3.2 3.6 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.0 1.0 4.4 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. On-State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT Figure 4. Maximum Non-Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 ZqJC(t) = RqJC * r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 2N6400 Series TYPICAL CHARACTERISTICS OFFSTATE VOLTAGE = 12 V RL = 50 W 30 20 TJ = -40C 100 10 7.0 5.0 25C 3.0 2.0 125C I GT, GATE TRIGGER CURRENT (mA) i GT, PEAK GATE CURRENT (mA) 100 70 50 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 10 1 -40 -25 200 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Current versus Pulse Width 1.0 100 0.9 IH , HOLDING CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (VOLTS) -10 0.8 0.7 0.6 0.5 0.4 10 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 1 -40 -25 -10 125 TJ, JUNCTION TEMPERATURE (C) 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 125 2N6400 Series ORDERING INFORMATION Device Package 2N6400G TO-220AB (Pb-Free) 2N6401G TO-220AB (Pb-Free) 2N6402G TO-220AB (Pb-Free) 2N6403G TO-220AB (Pb-Free) 2N6403TG TO-220AB (Pb-Free) 2N6404G TO-220AB (Pb-Free) 2N6405G TO-220AB (Pb-Free) http://onsemi.com 6 Shipping 500 Units / Box 50 Units / Rail 500 Units / Box 2N6400 Series PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE O -T- B F 4 Q SEATING PLANE C T S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6400/D