CE 1N4148
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-Melf case with the type
designation LL4148
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Average rectified current, Half wave rectification with IAV 150 mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mA
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max.Units
Forward voltage VF1Volts
Leakage current at VR=20V IR25 nA
at VR=75V IR5nA
at VR=20V, TJ=150 IR50 nA
Junction capacitance at VR=VF=0V CJ4pF
Voltage rise when switching ON tested with 50mA 2.5 Volts
pulse Tp=0.1 S, Rise time<30 S, fp=5 to 100KHz
Reverse recovery time from IF=10mA to IR=1mA, trr 4ns
VR=6V, RL=100
Thermal resistance junction to ambient R JA 350 K/W
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Vfr
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3
CE 1N4148
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES 1N4148
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3
