CE 1N4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-Melf case with the type designation LL4148 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units VR 75 Volts VRM 100 Volts IAV 150 mA Surge forward current at t<1S and TJ=25 IFSM 500 mA Power dissipation at TA=25 Ptot 5001) mW TJ 175 TSTG -65 to + 175 Reverse voltage Peak reverse voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F 50Hz Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Max. Units VF 1 Volts at VR=20V IR 25 nA at VR=75V IR 5 nA IR 50 nA CJ 4 pF 2.5 Volts 4 ns 350 K/W Forward voltage Leakage current at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Voltage rise when switching ON tested with 50mA pulse Tp=0.1 S, Rise time<30 Min. Typ. Vfr S, fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA, trr VR=6V, RL=100 Thermal resistance junction to ambient R JA 0.45 Rectification efficience at f=100MHz,VRF=2V Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Page 1 of 3 CE 1N4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES 1N4148 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE 1N4148 CHENYI ELECTRONICS FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3