T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 1 of 6
1N5518BUR-1 thru 1N5546BUR-1
Availa ble on
commercial
versions
Low Voltage Avalanche
500 mW Zener Diodes
Qualified per MIL-PRF-19500/437
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage
regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus
1% to 20%. The standard tolerance is plus/minus 5% with the B suf f ix unless ordered
otherwise. These glass surface mount devices are available with an internal metallurgical
bond option. This type of bonded Zener package construction is also in JAN, JANTX, and
JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
DO-213AA MELF
Package
Also available in:
DO-35 (DO-204AH)
(axial-leaded)
1N5518B-1 thru 1N5546B-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5518 thru 1N5546.
• Voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. See Note 1 on page 3.
• Interna l meta llurg ic al bond.
• JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Regulates voltage over a broad operating current and temperature range.
• Extensive selection from 3.3 to 33 V.
• Hermetically sealed surface mount package.
• Nonsensitive to ESD per MIL-STD-750 Method 1020.
• Minimal capacitance (see Figure 3).
• Inherently radiation hard as described in Microsemi ’s “MicroNote 050” which is available at
Microsemi.com.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Steady-State Power
(Note 1)
(Also see derating in Figure 2)
PD 0.5 W
Thermal Resi stan ce Jun cti on-to-End Cap (Note 2)
RӨJEC
100
oC/W
Thermal Resi stan ce Jun cti on-to-Ambient (Note 2)
RӨJA
300
oC/W
Thermal Impedance
ZӨJX
35
oC/W
Forward Voltage 200mA
VF
1.1
V
Solder Pad Temperature @ 10 s
TSP
260
oC
Notes: 1. At end cap temperature TEC < 125 oC or at ambient TA < 50 ºC when mounted on FR4 PC board as
described for thermal resist ance above (see Figure 2 for derating). Derate to 0 at +175 oC.
2. When mounted on FR4 PC board (1 oz Cu) with recommended footprint (see last page).
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 2 of 6
1N5518BUR-1 thru 1N5546BUR-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass DO-213AA (SOD80 or MLL34) MELF style package.
• TERMINALS: End caps tin-lead plated or RoHS compliant matte-Tin plating available (on commercial only) solderable per MIL-
STD-750, method 2026.
• POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite
end for Zener regulation.
• MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6 PPM/oC. The
COE of the Mounting Surface System should be selected to provide a suitable match with this device.
• MARKING: cathode band only.
• TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Con sult factory for quantities.
• WEIGHT: 0.04 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5518 B UR -1 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
See Electrical Characteristics
table
Zener Voltage Tolerance
A = 10%
B = 5%
C = 2%
D = 1%
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grady only)
Blank = non-RoHS compliant
Metallurgical Bond
-1 = Metallurgical bond
Package type
UR = surface mount
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
IZL
Low Regulator (Zener) Current: The lowest rated dc current for the specified power rating.
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
VZ
Zener Voltage: The zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
∆VZ
Voltage Regulation: The change in zener voltage between two specified currents or percentage of IZM.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 3 of 6
1N5518BUR-1 thru 1N5546BUR-1
ELECTRICAL CHARACTERISTICS
(TA = 25
o
C unless otherwise noted. Based on DC measurements at thermal equilibri um; VF = 1.1 Max @ IF = 200 mA for all types.)
JEDEC TYPE
NUMBER
(Note 1)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
Volts
TEST
CURRENT
IZT
mA
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ IZT
(Note 3)
Ohms
MAX. REVERSE CURRENT
(Note 4) B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
IZM
(Note 5)
mA
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT IZ = 250 µA
ND
µ
V/
√
Hz
REGULATION
FACTOR
∆
VZ
(Note 6)
Volts
LOW VZ
CURRENT
IZL
(Note 6)
mA
IR
µ
A
VR
– VOLTS
NON &
A-
SUFFIX B-C-D
SUFFIX
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
3.3
3.6
3.9
4.3
4.7
20
20
20
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
0.90
0.90
1.0
1.5
1.0
1.0
1.0
1.5
2.0
115
105
98
88
81
0.5
0.5
0.5
0.5
0.5
0.90
0.90
0.85
0.75
0.60
2.0
2.0
2.0
2.0
1.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
1.0
1.0
26
30
30
30
35
2.0
2.0
1.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
1.0
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.25
0.01
0.01
0.01
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
8.2
9.1
10.0
11.0
12.0
1.0
1.0
1.0
1.0
1.0
40
45
60
80
90
0.5
0.1
0.05
0.05
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
4.0
4.0
5.0
10
0.05
0.05
0.10
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
13.0
14.0
15.0
16.0
17.0
1.0
1.0
1.0
1.0
1.0
90
100
100
100
100
0.01
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
20
20
20
0.20
0.20
0.20
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
18.0
19.0
20.0
22.0
24.0
1.0
1.0
1.0
1.0
1.0
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
20
20
25
30
0.20
0.20
0.20
0.25
0.30
0.01
0.01
0.01
0.01
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
35
40
45
50
0.35
0.40
0.45
0.50
0.01
0.01
0.01
0.01
NOTES:
1. TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only VZ, IR, and VF. Units with “A”
prior to the UR-1 suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six parameters are
indicat ed by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffi x for +/ -1.0% prior to the UR-1 suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 oC.
3. ZENER IMPEDANCE (ZZ) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current havi ng an rms value equal to 10% of t he dc
zener current (IZT) is superimposed on IZT.
4. REV E RSE CURRE NT (IR) –
Reverse currents are guaranteed and are measured at VR as shown on the table.
5. MAXIMUM REGULATOR CURRENT (IZM) –
The m aximum current shown is as shown in MIL-PRF-19500/437.
6. MAXIMUM REGULATI O N FA CT OR (∆VZ) –
∆VZ is the maximum differenc e between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibri um.
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 4 of 6
1N5518BUR-1 thru 1N5546BUR-1
GRAPHS
TEC, End Cap Temperature (oC)
FIGURE 1 – Noise Density Measurement Circuit
FIGURE 2 – Power Derating Curve
Zener Voltage VZ
FIGURE 4
FIGURE 3 – Capacitance vs. Zener Voltage (Ty pical) Zener Diode Characteristics and Symbol Identification
Noise density, (N
D
) is specified in microvolt-rms p er
squa
re-root-
hertz. Actual measurement is performed
using a 1 kHz to 3 kHz frequency bandpass filter at a
constant Zener test current (I
ZT) at 25 oC ambient
temperature.
Typical Capacitance in Picofarads (pf)
At zero volts
At –2 volts (VR)
P
d
, Rated Maximum dc Operation (mW)
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 5 of 6
1N5518BUR-1 thru 1N5546BUR-1
GRAPHS (continued)
OPERATING CURRENT IZT (mA)
FIGURE 5
ZENER IMPEDANCE vs. OPERATION CURRENT (typical)
ZENER IMPEDANCE Z
ZT
(Ohms)
6.8 Volt
11 Volt
28 Volt
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 6 of 6
1N5518BUR-1 thru 1N5546BUR-1
PACKAGE DIMENSIONS
Ltr
Dimensions
Inch
Millimeter
Min
Max
Min
Max
BD
.063
.067
1.60
1.70
BL
.130
.146
3.30
3.71
ECT
.016
.022
0.41
0.56
S
.001 min
0.03 min
NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
INCHES
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03