IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 * 14A, 500V * rDS(ON) = 0.400 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol PACKAGE TO-247 2331.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. File Number BRAND D IRFP450 NOTE: When ordering, use the entire part number. G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) 4-353 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFP450 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFP450 500 500 14 8.8 56 20 180 1.44 860 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 10) 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 A VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 A Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS On Resistance (Note 2) Turn-On Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) - - A - - 100 nA 0.3 0.4 13.8 - S - 16 27 ns - 45 66 ns td(OFF) - 68 100 ns tf - 41 60 ns - 82 130 nC - 12 - nC - 42 - nC tr Turn-Off Delay Time 14 - gfs td(ON) Rise Time VGS = 20V 9.3 rDS(ON) Forward Transconductance (Note 2) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS ID = 7.9A, VGS = 10V (Figures 8, 9) VDS 50V, ID = 7.9A (Figure 12) VDD = 250V, ID 14A, VGS = 10V, RGS = 6.1, RL = 17.4 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID 14A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of OperatingTemperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Internal Drain Inductance LD Measured from the Contact Screw on Header Closer to Source and Gate Pins to Center of Die Internal Source Inductance LS Measured from the Source Lead, 6.0mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D - 2000 - pF - 400 - pF - 100 - pF - 5.0 - nH - 12.5 - nH - - 0.70 oC/W - - 30 oC/W LD G LS S Thermal Resistance, Junction to Case RJC Thermal Resistance, Junction to Ambient RJA 4-354 Free Air Operation IRFP450 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier D MIN TYP MAX UNITS - - 14 A - - 56 A G S Source to Drain Diode Voltage (Note 2) TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - - 1.4 V trr TJ = 150oC, ISD = 13A, dISD/dt = 100A/s - 1300 - ns QRR TJ = 150oC, ISD = 13A, dISD/dt = 100A/s - 7.4 - C VSD Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 7.9mH, RG = 25, peak IAS = 14A. Typical Performance Curves Unless Otherwise Specified 15 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 12 9 6 3 0 0 50 100 150 25 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 ZJC, THERMAL IMPEDANCE POWER DISSIPATION MULTIPLIER 1.2 0.5 0.2 0.1 0.1 0.05 10-2 PDM 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 10-3 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-355 1 10 IRFP450 Typical Performance Curves Unless Otherwise Specified (Continued) 20 16 102 10s 100s 10 1ms 10ms 1 12 8 VGS = 5.0V 4 VGS = 4.5V VGS = 4.0V 10 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 VGS = 5.5V DC TJ = MAX RATED SINGLE PULSE 0.1 0 103 0 100 150 200 250 FIGURE 5. OUTPUT CHARACTERISTICS 102 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V VGS = 6.0V 16 VGS = 10V ID, DRAIN CURRENT(A) ID, DRAIN CURRENT (A) 50 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA VGS = 5.5V 12 8 VGS = 5.0V 4 VGS = 4.0V 10 1 TJ = 150oC TJ = 25oC 0.1 VGS = 4.5V 10-2 0 0 3 6 9 12 15 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS VGS = 10V VGS = 20V 0.8 0.7 0.6 0.5 0.4 0.3 0 10 30 40 50 20 ID , DRAIN CURRENT (A) 60 70 rDS(ON), NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 2s DUTY CYCLE = 0.5% MAX 0.9 3.0 2.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 7.9A 1.8 1.2 0.6 0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2s is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-356 10 FIGURE 7. TRANSFER CHARACTERISTICS 10 rDS(ON), ON-STATE RESISTANCE (S) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 103 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFP450 Unless Otherwise Specified (Continued) 1.25 10000 ID = 250A 1.15 1.05 0.95 6000 CISS 4000 COSS 0.85 2000 CRSS 0.75 -40 0 80 40 120 0 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TJ = 25oC 12 TJ = 150oC 8 4 0 4 5 10 2 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 12 ID , DRAIN CURRENT (A) 2 10 5 2 1 16 VGS, GATE TO SOURCE (V) 20 TJ = 150oC TJ = 25oC 5 2 20 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 0 0.5 1.0 1.5 2.0 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 14A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 0 0 25 50 75 100 125 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-357 102 PULSE DURATION = 80s 5 DUTY CYCLE = 0.5% MAX 0.1 0 2 102 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V 16 1 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) 20 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 8000 C, CAPACITANCE (pF) rDS(ON), NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE Typical Performance Curves 2.5 IRFP450 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-358 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRFP450 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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