Document Number: 83621 www.vishay.com
Revision 17-August-01
2–90
SINGLE CHANNEL
IL30/31/55
DUAL CHANNEL
ILD30/31/55
QUAD CHANNEL
ILQ30/31/55
Photodarlington Optocoupler
FEATURES
Current Transfer Ratio
IL/ILD/ILQ30/55, 100% min.
IL/ILD/ILQ31, 200% min.
125 mA Load Current Rating
Fast Rise Time, 10 µS
Fast Fall Time, 35 µS
Single, Dual and Quad Channel
Solid State Reliability
Standard DIP Packages
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
DESCRIPTION
The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are
optically coupled isolators with Gallium Arsenide
infrared emitters and silicon photodarlington sen-
sors. Switching can be achieved while maintaining
a high degree of isolation between driving and load
circuits, with no crosstalk between channels. These
optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
The Il30/31/55 are equivalent to MCA230/MCA231/
MCA255. The ILD30/31/55 re designed to reduce
board space requirements in high density applications.
Maximum Ratings
Emitter
(each channel)
Peak Reverse Voltage.....................................3.0 V
Continuous Forward Current........................ 60 mA
Power Dissipation at 25
°
C .........................100 mW
Derate Linearly from 25
°
C .................. 1.33 mW/
°
C
Detector
(each channel)
Collector-Emitter Breakdown Voltage
IL/D/Q30.......................................................30 V
IL/D/Q55.......................................................55 V
Collector (Load) Current............................ 125 mA
Power Dissipation at 25
°
C Ambient...........150 mW
Derate Linearly from 25
°
C .................... 2.0 mW/
°
C
Package
Total Package Power Dissipation at 25
°
C
IL30/31/55................................................250 mW
ILD30/31/55 .............................................400 mW
ILQ30/31/55 .............................................500 mW
Derate Linearly from 25
°
C
IL30/31/55........................................... 3.3 mW/
°
C
ILD30/31/55 ...................................... 5.33 mW/
°
C
ILQ30/31/55 ...................................... 6.67 mW/
°
C
Isolation Test Voltage ............................ 5300 V
RMS
Creepage.................................................
7.0 mm
Clearance ................................................
7.0 mm
Comparative Tracking Index.............................175
Storage Temperature .................. –55
°
C to +125
°
C
Operating Temperature............... –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ...................10 sec.
V
DE
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°9°
.300.347
(7.628.81)
4°
typ.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
1
2
3
4
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in inches (mm)
Quad Channel
Dual Channel
Single Channel
Document Number: 83621 www.vishay.com
Revision 17-August-01
291
Electrical Characteristics
T
A
=25
°
C
Parameter
Symbol Min. Typ. Max. Unit Condition
GaAs Emitter (per channel)
Forward Voltage
V
F
1.25 1.5 V
I
F
=20 mA
Reverse Current
I
R
0.1 10
µ
A
V
R
=3.0 V
Capacitance
C
O
25 pF
V
R
=0 V
Detector (per channel)
Collector-Emitter Breakdown Voltage BV
CEO
30/55 ——V
I
C
=100
µ
A
Collector-Emitter Leakage Current
I
CEO
1.0 100 nA
V
CE
=10 V,
I
F
=0
Collector-Emitter Capacitance
C
CE
3.4 pF
V
CE
=10 V, f=1.0 MHz
Package
Current Transfer Ratio IL/D/Q30/55 CTR 100 400 %
I
F
=10 mA,
V
CE
=5.0 V
IL/D/Q31 200 400
Collector-Emitter Saturation Voltage
V
CE
sat
0.9 1.0 V
I
C
=50 mA,
I
F
=50 mA
Isolation Test Voltage 5300 ——V
RMS
Isolation Resistance
R
ISOL
10
12
Coupling Capacitance
C
ISOL
0.5 pF
Rise Time
t
r
10
µ
s
V
CC
=13.5 V,
I
F
=50 mA,
R
L
=100
Fall Time
t
f
35
µ
s
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTR
ce
at
T
A
=25
°
C versus LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vce =1
V
Vce = 5
V
IF - LED Current - mA
NCTRce - Normalized CTR
Vce = 5 V
IF = 10 mA
Ta = 25 °C
Normalized to:
Figure 3. Normalized non-saturated and saturated
collector-emitter current versus LED current
Figure 4. Normalized collector-base photocurrent
versus LED current
100
101.1
.001
.01
.1
1
10
Vce = 1
V
Vce = 5
V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 m
A
Vce = 5 V
Normalized to:
.1 1 10 100
.001
.01
.1
1
10
IF - LED Current - mA
NIcb - Normalized Icb
Ta = 25°C
Vcb = 3.5
V
IF = 10 mA
Normalized to:
Document Number: 83621 www.vishay.com
Revision 17-August-01
292
Figure 8. Switching waveforms
Figure 9. Switching schematic
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
RL
VCC=13.5 V
IF=50 mA
F=10 KHz,
DF=50%
Figure 5. Hfe current gain versus base current
Figure 6. Low to high propagation delay versus collector
load resistance and LED current
Figure 7. High to low propagation delay versus collector
load resistance and LED current
VCE=1 V
VCE=5 V
.01 .1 1 10 100
12000
10000
8000
6000
4000
2000
0
Base Current
Hfe - Current Gain
TA = 25°C
1K
220
470
100
0 5 10 15 20
80
60
40
20
0
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µs
TA = 25°C, VCC = 5 V
Vth = 1.5 V
0 5 10 15 20
20
15
10
5
0
IF - LED Current - mA
tpHL - High/Low Propagation
Delay - µs
1K
100
TA = 25°C
VCC = 5 V
Vth = 1.5 V