VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-1
P-Channel 80- and 100-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28
VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
FEATURES BENEFITS APPLICATIONS
DHigh-Side Switching
DLow On-Resistance: 2.5 W
DModerate Threshold: –3.4 V
DFast Switching Speed: 40 ns
DLow Input Capacitance: 75 pF
DEase in Driving Switches
DLow Offset (Error) Voltage
DLow-Voltage Operation
DHigh-Speed Switching
DEasily Driven Without Buffer
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DPower Supply, Converter Circuits
DMotor Control
“S” VP
1008L
xxyy
“S” VP
0808P
xxyy
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
VP0808L
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
VP1008L
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol VP0808L VP1008L Unit
Drain-Source Voltage VDS –80 –100
Gate-Source Voltage VGS "30 "30 V
Continuous Drain Current TA= 25_C–0.28 –0.28
Continuous Drain Current
(TJ = 150_C) TA= 100_CID–0.17 –0.17 A
Pulsed Drain CurrentaIDM –3 –3
TA= 25_C0.8 0.8
Power Dissipation TA= 100_CPD0.32 0.32 W
Thermal Resistance, Junction-to-Ambient RthJA 156 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.