2N5302G - ON SEMICONDUCTOR - searchdatasheet.com

March, 2006− Rev. 2 1Publication Order Number:

2N5302/D

2N5302

High−Power NPN Silicon

Transistor

High−power NPN silicon transistors are for use in power amplifier

and switching circuits applications.

Features

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

•Pb−Free Package is Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous (Note 2)

ÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

7.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25_C

Derate above 25_C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

200

1.14

ÎÎÎ

W/_C

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

qJC

ÎÎÎÎ

0.875

ÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Case−to−Ambient

ÎÎÎÎ

qCA

ÎÎÎÎ

ÎÎÎ

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

200

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Temperature Derating Curve

TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

150

100

8.0

6.0

4.0

2.0

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204AA (TO−3)

CASE 1−07

STYLE 1

30 AMPERES

POWER TRANSISTOR

NPN SILICON

60 VOLTS, 200 WATTS

MARKING DIAGRAM

2N5302 = Device Code

G = Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Origin

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Device Package Shipping

ORDERING INFORMATION

2N5302 TO−204 100 Units/Tray

2N5302G

AYYWW

MEX

2N5302G TO−204

(Pb−Free) 100 Units/Tray

2N5302

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 4)

*(IC = 1.0 Adc, VCE = 2.0 Vdc)

*(IC = 15 Adc, VCE = 2.0 Vdc)

*(IC = 30 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

5.0

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector−Emitter Saturation Voltage (Note 4)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 20 Adc, IB = 2.0 Adc)2

(IC = 30 Adc, IB = 6.0 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.75

2.0

3.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Base Emitter Saturation Voltage (Note 4)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 15 Adc, IB = 1.5 Adc)

(IC = 20 Adc, IB = 2.0 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

1.7

1.8

2.5

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Base−Emitter On Voltage (Note 4)

(IC = 15 Adc, VCE = 2.0 Vdc)

(IC = 30 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

1.7

3.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

−

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎ

−

ÎÎÎ

2.0

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎ

3. Indicates JEDEC Registered Data.

4. Pulse Width v 300 ms, Duty Cycle v 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Figure 2. Turn−On time

INPUT PULSE

tr ≤ 20 ns

PW = 10 to 100 ms

DUTY CYCLE = 2.0%

+11 V

−2.0 V

VCC+30 V

3.0

SCOPE

tr ≤ 20 ns

Figure 3. Turn−Off time

INPUT PULSE

tr ≤ 20 ns

PW = 10 to 100 ms

DUTY CYCLE = 2.0%

+11 V

−9.0 V

VCC+30 V

3.0

SCOPE

tr ≤ 20 ns

VBB = 7.0 V

2N5302

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Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.03

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 2000500

qJC(t) = r(t) qJC

qJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

100

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 100

Secondary Breakdown Limited

Bonding Wire Limited

Thermal Limitations

Pulse Duty Cycle ≤ 10%

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

5302

100 ms

1.0 ms

5.0 ms

Figure 6. Capacitance versus Voltage

3000

0.5

VR, REVERSE VOLTAGE (VOLTS)

100 5.0 7.0 20 30 50101.0 2.0 3.0

C, CAPACITANCE (pF)

500

300

200

TJ = 25°C

Cib

Cob

TC = 25°C

2N5302

2000

1000

5.0

0.03

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

0.7

0.5

0.3

0.1

0.05 0.05 0.1 0.2 0.5 2.0 3.0 30

tr @ VCC = 30 V

td @ VOB = 2.0 V

TJ = 25°C

IC/IB = 10

0.07

t, TIME (s)μ

1.0

Figure 7. Turn−On Time

1.0

0.2

0.3 5.0 10 20

tr @ VCC = 10 V

3.0

0.03

IC, COLLECTOR CURRENT (AMP)

0.7

0.5

0.3

0.1 0.05 0.1 0.5 1.0 3.0 30

tf @ VCC = 30 V

TJ = 25°C

IB1 = IB2

IC/IB = 10

ts′ ≈ts − 1/8 tf

t, TIME (s)μ

Figure 8. Turn−Off Time

1.0

0.3 5.0 10

tf @ VCC = 10 V

ts′

2N5302

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VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

RBE, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

300

0.03

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

100

Figure 10. Collector Saturation Region

2.0

0.01

IB, BASE CURRENT (AMP)

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

1.6

1.2

0.8

0.4

IC = 2.0 A

TJ = 25°C

5.0 A 10 A

200

hFE, DC CURRENT GAIN

TJ = 175°C

25°C

−55 °C

VCE = 10 V

VCE = 2.0 V

20 A

108

Figure 11. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

20 40 60 80 100 120 140 160 200

106

105

104

103

102

180

VCE = 30 V

IC = 2 x ICES

IC ≈ICES

TYPICAL ICES VALUES OBTAINED

FROM FIGURE 13

107

IC = 10 x ICES

2.0

0.03

IC, COLLECTOR CURRENT (AMP)

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

1.6

0.8

0.6

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 12. “On” Voltages

1.8

1.4

1.2

1.0

0.2

VBE(on) @ VCE = 2.0 V

103

−0.4

Figure 13. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

102

101

100

10−1

, COLLECTOR CURRENT (A)μIC

10− 2

10− 3

−0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6

VCE = 30 V TJ = 175°C

100°C

25°C

REVERSE FORWARD

IC = ICES

+2.5

0.03

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.0

+1.5

+0.5

−0.5

−1.0

−1.5

−2.0

−2.5

qVB for VBE(sat)

*qVC for VCE(sat)

TJ = −55°C to +175°C

*APPLIES FOR IC/IB < hFE@VCE +2.0V

+1.0

2N5302

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PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

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