2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com * Low Collector-Emitter Saturation Voltage - * VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII I III III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIII IIIIIIIIIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous (Note 2) Symbol Value Unit VCEO 60 Vdc VCB 60 Vdc IC 30 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 W W/_C TJ, Tstg - 65 to + 200 _C Operating and Storage Junction Temperature Range 30 AMPERES POWER TRANSISTOR NPN SILICON 60 VOLTS, 200 WATTS TO-204AA (TO-3) CASE 1-07 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 0.875 _C/W Thermal Resistance, Case-to-Ambient qCA 34 _C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. 2N5302G AYYWW MEX PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 2N5302 G A YY WW MEX 160 180 200 ORDERING INFORMATION Device Figure 1. Power Temperature Derating Curve 2N5302 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 March, 2006- Rev. 2 1 = Device Code = Pb-Free Package = Location Code = Year = Work Week = Country of Origin 2N5302G Package Shipping TO-204 100 Units/Tray TO-204 (Pb-Free) 100 Units/Tray Publication Order Number: 2N5302/D 2N5302 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIII IIIIIII IIII IIII III III IIIIIII IIII IIII III III IIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 - - 5.0 - 1.0 - 10 - 1.0 - 5.0 40 15 5.0 - 60 - - - - 0.75 2.0 3.0 - - - 1.7 1.8 2.5 - - 1.7 3.0 Unit OFF CHARACTERISTICS (Note 3) Collector-Emitter Sustaining Voltage (Note 4) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) ICEX Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) hFE *Collector-Emitter Saturation Voltage (Note 4) (IC = 10 Adc, IB = 1.0 Adc) (IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc) VCE(sat) *Base Emitter Saturation Voltage (Note 4) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) VBE(sat) *Base-Emitter On Voltage (Note 4) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS (Note 3) Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.0 - MHz Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 - - SWITCHING CHARACTERISTICS (Note 3) Rise Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Storage Time Fall Time tr - 1.0 ms ts - 2.0 ms tf - 1.0 ms 3. Indicates JEDEC Registered Data. 4. Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS VCC INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0% +30 V 3.0 +11 V VCC INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0% +30 V 3.0 +11 V 10 -2.0 V TO SCOPE tr 20 ns 10 TO SCOPE tr 20 ns 0 -9.0 V D VBB = 7.0 V Figure 2. Turn-On time Figure 3. Turn-Off time http://onsemi.com 2 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5302 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) qJC(t) = r(t) qJC qJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 0.02 0.03 SINGLE PULSE 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 500 1000 2000 Figure 4. Thermal Response 100 3000 100 ms IC, COLLECTOR CURRENT (AMP) 50 2000 10 5.0 ms 5302 5.0 C, CAPACITANCE (pF) 20 dc 1.0 ms TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2.0 1.0 0.5 TJ = 25C 1000 Cib 500 Cob 300 200 2N5302 0.2 0.1 1.0 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.5 100 Figure 5. Active-Region Safe Operating Area TJ = 25C IC/IB = 10 2.0 ts 1.0 t, TIME (s) 1.0 0.7 0.5 tr @ VCC = 30 V 0.3 50 TJ = 25C IB1 = IB2 IC/IB = 10 ts ts - 1/8 tf 0.7 0.5 tf @ VCC = 30 V 0.3 0.2 tf @ VCC = 10 V tr @ VCC = 10 V 0.1 30 3.0 3.0 0.07 0.05 0.03 0.05 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance versus Voltage 5.0 t, TIME (s) 1.0 td @ VOB = 2.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 0.1 0.03 0.05 20 30 Figure 7. Turn-On Time 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-Off Time http://onsemi.com 3 10 30 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5302 300 200 hFE , DC CURRENT GAIN VCE = 10 V VCE = 2.0 V TJ = 175C 25C 100 70 50 -55 C 30 20 10 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 2.0 TJ = 25C 1.6 IC = 2.0 A 108 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 2.0 VCE = 30 V 1.6 IC = 10 x ICES 106 IC = 2 x ICES 105 IC ICES 104 103 20 40 60 80 100 1.4 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 0.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 0 TJ = 25C 1.8 107 V, VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 20 A Figure 10. Collector Saturation Region VCE(sat) @ IC/IB = 10 0.2 120 140 160 180 0 0.03 0.05 200 0.1 0.3 0.5 1.0 3.0 5.0 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base-Emitter Resistance Figure 12. "On" Voltages VCE = 30 V 102 V, TEMPERATURE COEFFICIENTS (mV/C) 103 IC, COLLECTOR CURRENT (A) 10 A 1.2 Figure 9. DC Current Gain 102 5.0 A TJ = 175C 100C 101 25C 100 IC = ICES 10-1 10- 2 10- 3 -0.4 -0.3 REVERSE -0.2 -0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 10 +2.5 TJ = -55C to +175C +2.0 +1.5 *APPLIES FOR IC/IB < +1.0 +0.5 hFE@VCE + 2.0V 2 *qVC for VCE(sat) 0 -0.5 -1.0 qVB for VBE(sat) -1.5 -2.0 -2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut-Off Region Figure 14. Temperature Coefficients http://onsemi.com 4 30 30 2N5302 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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