Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 3
1Publication Order Number:
BAS16TT1/D
BAS16TT1G
Silicon Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA=25C)
Rating Symbol Max Unit
Continuous Reverse Voltage VR75 V
Recurrent Peak Forward Current IF200 mA
Peak Forward Surge Current
Pulse Width = 10 ms
IFM(surge) 500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR--4 Board (Note 1)
TA=25C
Derated above 25C
PD
225
1.8
mW
mW/C
Thermal Resistance,
Junction--to--Ambient (Note 1)
RθJA 555 C/W
Total Device Dissipation,
FR--4 Board (Note 2)
TA=25C
Derated above 25C
PD
360
2.9
mW
mW/C
Thermal Resistance,
Junction--to--Ambient (Note 2)
RθJA 345 C/W
Junction and Storage
Temperature Range
TJ,T
stg -- 5 5 t o
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0 1.0 Inch Pad
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Device Package Shipping†
ORDERING INFORMATION
CASE 463
SOT--416
STYLE 2
MARKING
DIAGRAM
3
CATHODE
1
ANODE
BAS16TT1G SOT--416
(Pb--Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
12
3
A6 MG
G
1
XX = Specific Device Code
M= Date Code
G= Pb--Free Package
BAS16TT1G
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2
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF=1.0mA)
(IF=10mA)
(IF=50mA)
(IF= 150 mA)
VF
--
--
--
--
715
866
1000
1250
mV
Reverse Current
(VR=75V)
(VR=75V,T
J= 150C)
(VR=25V,T
J= 150C)
IR
--
--
--
1.0
50
30
mA
Capacitance
(VR=0,f=1.0MHz)
CD-- 2.0 pF
Reverse Recovery Time
(IF=I
R=10mA,R
L=50Ω) (Figure 1)
trr -- 6.0 ns
Stored Charge
(IF=10mAtoV
R=6.0V,R
L= 500 Ω) (Figure 2)
QS -- 45 PC
Forward Recovery Voltage
(IF=10mA,t
r=20ns)(Figure3)
VFR -- 1.75 V
BAS16TT1G
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3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
VF
1nsMAX
90%
10%
t
100 ns
tif
trr
Irr
500 ΩDUT
50 Ω
DUTY CYCLE = 2%
Vf
90%
10%
20 ns MAX
t
400 ns
VC
VCM
t
VCM =Qa
C
500 ΩDUT BAW62
D1 243 pF 100 KΩ
DUTY CYCLE = 2%
V
120 ns
t
2nsMAX
10%
90%
V
Vfr
1KΩ450 Ω
50 Ω
DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R10 MΩ
C7pF
BAS16TT1G
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4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA=85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage Figure 5. Leakage Current
Figure 6. Capacitance
TA=--40C
TA=25C
TA= 150C
TA= 125C
TA=85C
TA=55C
TA=25C
IR, REVERSE CURRENT (A)
Figure 7. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
BAS16TT1G
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5
PACKAGE DIMENSIONS
SC--75/SOT--416
CASE 463--01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
-- E --
-- D --
b
e
3PL
0.20 (0.008) E
C
L
A
A1
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
mm
inches
SCALE 10:1
0.356
0.014
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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BAS16TT1/D
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