1998. 6. 15 1/2
SEMICONDUCTOR
TECHNICAL DATA
BCW68
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
Type Name
h Rank
FE
Marking
Lot No.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-800 mA
Emitter Current IE800 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
TYPE MARK
BCW68F DF
BCW68G DG
MARK SPEC
1998. 6. 15 2/2
BCW68
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 -5.0 - - V
Collector Cut-off Current ICES
VEB=0V, VCE=-45V - - -20 nA
Ta=150℃, VEB=0V, VCE=-45V - - -20 μA
Emitter Cut-off Current IEBO IC=0, VEB=-4V - - -20 nA
DC Current Gain
Group F
hFE
VCE=-1V, IC=-10mA 75 - -
Group G 120 - -
Group F VCE=-1V, IC=-100mA 100 - 250
Group G 160 - 400
Group F VCE=-1V, IC=-500mA 35 - -
Group G 60 -
Base-Emitter Saturation Voltage VBE(sat)
IC=-100mA, IB=-10mA - - -1.25
V
IC=-500mA, IB=-50mA - - -2.0
Collector-Emitter Saturation Voltage VCE(sat)
IC=-100mA, IB=-10mA - - -0.3
V
IC=-500mA, IB=-50mA - - -0.7
Transition Frequency fTIC=-80mA, VCE=-10V, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 18 pF
Collector Input Capacitance Cib VEB=-0.5V, f=1MHz - - 80 pF
Noise Figure NF IC=-0.2mA, VCE=-5V,
Rg=1kΩ, f=1kHz - 2.0 10 dB
