SEMICONDUCTOR BCW68 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E B L D L H MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA PC * 350 mW Tj 150 Tstg -55150 3 G A 2 1 Q P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER Collector Power Dissipation Junction Temperature Storage Temperature Range 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.9% Alumina 10x8x0.6mm. MARK SPEC Marking TYPE MARK BCW68F DF BCW68G DG 1998. 6. 15 Revision No : 1 h FE Rank Lot No. Type Name 1/2 BCW68 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -45 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10A, IC=0 -5.0 - - V VEB=0V, VCE=-45V - - -20 nA Ta=150, VEB=0V, VCE=-45V - - -20 A IC=0, VEB=-4V - - -20 nA 75 - - 120 - - 100 - 250 160 - 400 35 - - ICES Collector Cut-off Current IEBO Emitter Cut-off Current Group F VCE=-1V, IC=-10mA Group G Group F hFE DC Current Gain VCE=-1V, IC=-100mA Group G Group F VCE=-1V, IC=-500mA Group G Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 60 IC=-100mA, IB=-10mA - - -1.25 IC=-500mA, IB=-50mA - - -2.0 IC=-100mA, IB=-10mA - - -0.3 IC=-500mA, IB=-50mA - - -0.7 100 - - MHz VBE(sat) V VCE(sat) fT Transition Frequency - V IC=-80mA, VCE=-10V, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 18 pF Collector Input Capacitance Cib VEB=-0.5V, f=1MHz - - 80 pF Noise Figure NF - 2.0 10 dB IC=-0.2mA, VCE=-5V, Rg=1k, f=1kHz 1998. 6. 15 Revision No : 1 2/2