TDA7266B
10+10W DUAL BRIDGE AMPLIFIER
WIDE SUPP LY VOLTAGE RANGE (6V - 18V)
MINIMUM EXTERNAL COMPONENTS
– NO SVR CAPACITOR
– NO BOOTSTRA P
– NO BOUCHEROT CELLS
– INTERNALLY FIXED GAIN
STAND-BY & MUTE FUNCTIONS
SHORT CIR C U IT PROTECTION
THERMAL OVERLOAD PROTECTION
DESCRIPTION
The TDA7266B is a dual bridge amplif ier specially
designed for TV and Portable Radio applications.
September 2003
®
1
2
4
Vref
ST-BY 7
IN1
0.22µF
VCC
133
D94AU175B
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
470µF 100nF
BLOCK AND APPLICATION DIAGRAM
Multiwatt 15
ORDERING NUMBER: TDA7266B
TECHNOLOGY BI20II
1/9
1
2
3
4
5
6
7
9
10
11
8
N.C.
N.C.
S-GND
PW-GND
ST-BY
MUTE
N.C.
IN1
V
CC
OUT1-
OUT1+
13
14
15
12
OUT2+
OUT2-
VCC
IN2
D95AU261
PIN C ONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VSSupply Voltage 20 V
IOOutput Peak Current (internally limited) 2 A
Ptot Total Power Dissipation (Tcase = 70°C) 33 W
Top Operating Temperature 0 to 70 °C
Tstg, TjStorage and Junction Temperature -40 to +150 °C
THERMAL DATA
Symbol Description Value Unit
Rth j-case Thermal Resistance Junction to case Typ. 1.4 Max. 2 °C/W
ELECTRICAL CHARACTERISTICS (VCC = 13V, RL = 8, f = 1kHz, Tamb = 25°C unless otherwise
specified.)
Symbol Parameter Test Condition Min. Typ. Max. Unit
VCC Supply Range 6.5 18 V
IqTotal Quiescent Current RL = 50 65 mA
VOS Output Offset Voltage 120 mV
POOutput Power THD = 10% 8.3 10 W
THD Total Harmonic Distortion PO = 1W 0.1 0.3 %
PO = 0.1W to 2W
f = 100Hz to 15kHz 1%
SVR Supply Voltage Rejection f = 100Hz VR = 0.5V 40 56 dB
CT Crosstalk 46 60 dB
AMUTE Mute Attenuation 60 80 dB
TWThermal Threshold 150 °C
GVClosed Loop Voltage Gain 31 32 33 dB
Gv Voltage Gain Matching 0.5 dB
RiInput Resistance 25 30 K
TDA7266B
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1
2
4
Vref
ST-BY 7
IN1
C1 0.22µF
VCC
133
D95AU258A
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
C3 0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
C5
470µFC6
100nF
R1 10K
C2
10µF
µP
R2 10K
C4
1µF
Figure 1: Microprocess or Application
ELECTRICA L CHARACTERI STICS (Continued)
Symbol Parameter Test Condition Min. Typ. Max. Unit
VTMUTE Mute Threshold VO = -30dB 2.3 2.9 4.1 V
VTST-BY St-by Threshold 0.8 1.3 1.8 V
IST-BY ST-BY current V6 = GND 100 µA
eNTotal Output Noise Voltage A curve
f = 20Hz to 20kHz 150
220 500 µV
µV
APPLICATION SUGGES TION
STAND-BY A ND MUTE FUNCTION S
(A) Microprocessor Application
In order to avoid annoying "Pop-Noise" during
Turn-On/Off transients, it is necessary to guaran-
tee the right St-by and mute signals sequence.
It is quite simple to obtain this function using a mi-
croprocessor (Fig. 1 and 2).
At first St-by signal (from mP) goes high and the
voltage across the S t-by terminal (Pin 7) starts to
increase exponentially. The external RC network
is intended to turn-on slowly the biasing circuits of
the amplifier, this to avoid "POP" and "CLICK" on
the outputs.
When this voltage reaches the St-by threshold
level, the amplifier is switched-on and t he external
capacitors in series to the input terminals (C3,
C5) start to charge.
It’s necessary t o mantain the mute signal low until
the capacitors are fully charged, this to avoid that
the device goes in play mode causing a loud "Pop
Noise" on the speakers.
A delay of 100-200ms between St-by and mute
signals is suit able for a proper operation.
TDA7266B
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+V
S
(V)
V
IN
(mV)
V
ST-BY
pin 7
I
q
(mA)
ST-BY MUTE
PLAY MUTE ST-BY
+18
1.8
0.8
V
MUTE
pin 6
4.1
2.3
OFF
OFF
D96AU259
V
OUT
(V)
2.9
1.3
Figure 2: Microprocess or Driving Signals.
(B) Low Cost Application
In low cost applications where the mP is not pre-
sent, the suggested circuit is shown in fig.3.
The St-by and mute terminals are tied together
and they are connected to the supply line via an
external voltage divider.
The device is switched-on/off from t he supply line
and the ex ternal capacitor C4 is intended to delay
the St-by and mute threshold exceeding, avoiding
"Popping" problems.
TDA7266B
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1
2
4
Vref
ST-BY 7
IN1
C3 0.22µF
VCC
133
D95AU260A
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
C5 0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
C1
470µFC2
100nF
R1
47K
C4
10µF
R2
47K
Figure 3: Stand-alone Low-cost Application.
Figure 3b: PCB and Component Layout of the Application Circuit (Fig. 1).
TDA7266B
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0.010
0.1
1
10
0.1 1 10
THD(%)
Vcc = 12 V
Rl = 8 ohm
f = 15KHz
f = 5KHz
f = 1KHz
Pout (W )
Figure 4: Distortion vs Output Power
0.01
10
0.02
0.05
0.1
0.2
0.5
1
2
5
20 20k50 100 200 500 1k 2k 5k 10k
Vcc=12V
Rl =8 ohm
Pout = 100mW
Pout = 2W
THD(%)
Frequency (Hz)
Figure 5: Distortion vs Frequency
-5.000
-4.000
-3.000
-2.000
-1.000
0.0
1.0000
2.0000
3.0000
4.0000
5.0000
10 100 1k 10k 100k
Level(dBr)
freque ncy (H z)
Vcc = 16.5V
R l = 8 ohm
Pout = 1W
Figure 6: Frequency Respone
6
0
2
4
6
8
10
Po
(W)
7 8 9 10 11 12 Vs(V)
D99AU1080
Rf=8
f=1KHz
d=10%
d=1%
Figure 7: Output Power vs Supply Voltage
00.51234567891011
0
2
4
6
8
10
0
20
40
60
80
Ptot(W)
2 x Pout (W)
µ (%
)
Ptot
µ
Vcc = 12V
RL= 8
(
both channel
)
f = 1K Hz
Figure 8: Total Power Diss ipation & Efficiency v s
Output Power
12V
1 1.5 2 2.5 3 3.5 4 4.5 5
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Attenuat ion (dB)
Vpin.6(V)
Figure 9: Mute Attenuation vs. V pin.6
TDA7266B
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6789101112131415161718
30
35
40
45
50
55
60
65
70
Iq ( mA )
Vsupply(V)
Figure 11: Quiscent Current vs. Supply Voltage
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
Attenuation (dB)
V p in.7 (V )
Figure 10: Stand-B y Attenuation v s Vpin.7
TDA7266B
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Multiwatt15 V
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.66 0.75 0.026 0.030
G 1.02 1.27 1.52 0.040 0.050 0.060
G1 17.53 17.78 18.03 0.690 0.700 0.710
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.870 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.191
M1 4.63 5.08 5.53 0.182 0.200 0.218
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
OUTLINE AND
MECHANICAL DATA
TDA7266B
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TDA7266B
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