MPSA42 / MPSA43 MPSA42 / MPSA43 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2005-06-17 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 2 x 2.54 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Dimensions / Mae [mm] Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MPSA42 MPSA43 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 300 V 200 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 300 V 200 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 500 mA Base current - Basisstrom IB 100 mA Junction temperature - Sperrschichttemperatur Tj -65...+150C Storage temperature - Lagerungstemperatur TS -65...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 160 V MPSA42 MPSA43 ICB0 ICB0 - - - - 100 nA 100 nA MPSA42 MPSA43 IEB0 IEB0 - - - - 100 nA 100 nA VCEsat VCEsat - - - - 500 mV 400 mV Emitter-Base cutoff current - Emitterreststrom IB = 0, VEB = 6 V IB = 0, VEB = 4 V Collector saturation voltage - Kollektor-Sattigungsspannung 2) IC = 20 mA, IB = 2 mA 1 2 MPSA42 MPSA43 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gultig, wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MPSA42 / MPSA43 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - - 0.9 V 25 40 40 - - - - - - Base saturation voltage - Basis-Sattigungsspannung 1) IC = 20 mA, IB = 2 mA VBEsat DC current gain - Kollektor-Basis-Stromverhaltnis hFE hFE hFE VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz fT 50 MHz - - CCB0 CCB0 - - - - 3 pF 4 pF Collector-Base Capacitance - Kollektor-Basis-Kapazitat MPSA42 MPSA43 VCB = 20 V, IE = ie = 0, f = 1 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 200 K/W 2) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MPSA92, MPSA93 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gultig, wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG