BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT3904
Document number: BL/SSSTC061 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT3906).
z Collector Current Capability Ic=200mA.
z Collector-emitter Voltage VCEO=40V.
APPLICATIONS
z General switching and amplification SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT3904 1AM SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 - V
VCEO collector-emitter voltage open base 40 - V
VEBO emitter-base voltage open collector 6 - V
IC collector current (DC) - 200 mA
ICM peak collector current - 200 mA
IBM peak base current - 100 mA
Ptot total power dissipation Tamb≤25°C - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Pb
Lead-free