2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R206-037,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V
Continuous ±20 Gate Source Voltage
Non Repetitive(tp<50µs) VGSS ±40 V
Continuous 115 Maximum Drain
Current Pulsed ID 800 mA
Maximum Power Dissipation
Derated above 25°C PD 200
1.6
mW
mW/°C
Operating Temperature TOPR 0 ~ +70 °C
Storage Temperature TSTG -40 ~ +150
THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance, Junction to Ambient θJA 625 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=10µA 60 V
0.5 mA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V
TJ=125°C 1 µA
Gate-Body leakage, Forward IGSSF V
GS =20V, VDS=0V 100 nA
Gate-Body leakage Reverse IGSSR V
GS =-20V, VDS=0V -100 nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage VGS (th) V
GS = VDS, ID=250µA 1 2.1 2.5 V
VGS = 10V, ID=500mA 0.6 3.75
Drain-Source On-Voltage VDS (ON) VGS = 5.0V, ID=50mA 0.09 1.5
V
On-State Drain Current ID(ON) V
GS=10V,VDS≥2VDS(ON) 500 2700 mA
VGS =10V, ID=500mA
TJ=100°C 1.2
1.7
7.5
13.5 Ω
Static Drain-Source On-Resistance RDS (ON) VGS =5.0V, ID=50mA
TJ=100°C 1.7
2.4
7.5
13.5
Forward Transconductance gFS V
DS≥2VDS(ON), ID=200mA 80 320 mS
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss V
DS=25V,VGS=0V,f=1.0MHz 20 50 pF
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 4 5 pF
Turn-On Time tON
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
20 nS
Turn-Off Time tOFF
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
RGEN =25Ω
20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD V
GS=0V, Is=115mA (Note ) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current ISM
0.8 A
Maximum Continuous Drain-Source
Diode Forward Current Is
115 mA
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%